CN104124330A - 发光二极管模组 - Google Patents

发光二极管模组 Download PDF

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Publication number
CN104124330A
CN104124330A CN201310146704.5A CN201310146704A CN104124330A CN 104124330 A CN104124330 A CN 104124330A CN 201310146704 A CN201310146704 A CN 201310146704A CN 104124330 A CN104124330 A CN 104124330A
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emitting diode
light
circuit board
electrode
substrate
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吴开文
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CN201310146704.5A priority Critical patent/CN104124330A/zh
Publication of CN104124330A publication Critical patent/CN104124330A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种发光二极管模组，包括电路板及设置在电路板上的发光二极管封装结构，所述发光二极管封装结构包括基板、形成在基板上的引脚结构和反射杯、设置在引脚结构上的发光二极管芯片及覆盖所述发光二极管芯片的封装层，所述封装层的表面形成一出光面，所述引脚结构自基板延伸至反射杯位于出光面一侧的表面，所述引脚结构通过导电胶与电路板上的线路电性连接，所述发光二极管封装结构的出光面朝向电路板，所述电路板对应出光面的区域镂空形成一通孔，自所述出光面出射的光线经所述通孔出射。本发明中发光二极管封装结构的两电极延伸至出光面的一侧并通过导电胶与电路板上的线路形成电性连接，使得发光二极管封装结构与电路板之间的接触面积较大，从而提升发光二极管封装结构的散热效率。

Description

发光二极管模组
技术领域
本发明涉及一种半导体元件，尤其涉及一种发光二极管模组。
背景技术
发光二极管(Light Emitting Diode，LED)是一种可将电流转换成特定波长范围的光的半导体元件。发光二极管以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点，从而可作为光源而广泛应用于照明领域。
现有的LED模组通常包括电路板以及设置在电路板上的LED封装结构，该LED封装结构包括两电极。对于高功率的LED封装结构而言，业界通常在该两电极上设置若干金球，并通过金球将LED封装结构的电极和电路板上的线路形成电性连接。然而，在两电极上设置若干金球的制程相对繁琐，且每一金球与电极的接触面积有限，导致LED封装结构的散热效率较低。故，需进一步改进。
发明内容
鉴于此，有必要提供一种具有较高散热效率的发光二极管晶粒。
一种发光二极管模组，包括电路板及设置在电路板上的发光二极管封装结构，所述发光二极管封装结构包括基板、形成在基板上的引脚结构和反射杯、设置在引脚结构上的发光二极管芯片及覆盖所述发光二极管芯片的封装层，所述封装层的表面形成一出光面，所述引脚结构自基板延伸至反射杯位于出光面一侧的表面，所述引脚结构通过导电胶与电路板上的线路电性连接，所述发光二极管封装结构的出光面朝向电路板，所述电路板对应出光面的区域镂空形成一通孔，自所述出光面出射的光线经所述通孔出射。
发明中发光二极管封装结构的引脚结构延伸至反射杯靠近出光面的一侧并通过导电胶与电路板上的线路形成电性连接，由于引脚结构延伸至反射杯靠近出光侧的表面的部分的尺寸远大于传统技术中金球的尺寸，使得发光二极管封装结构与电路板之间的接触面积比传统技术中金球与电路的接触面积大的多，从而提升发光二极管封装结构的散热效率。
附图说明
图1为本发明的发光二极管模组一较佳实施例的剖视图。
主要元件符号说明
发光二极管模组 100
发光二极管封装结构 10
电路板 20
基板 11
第一表面 111
第二表面 112
引脚结构 12
第一电极 121
第二电极 122
反射杯 13
上表面 131
下表面 132
凹槽 133
发光二极管芯片 14
封装层 15
出光面 151
线路 21
通孔 22
导电胶 30
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
如图1所示，为本发明一较佳实施例提供的发光二极管模组100，该发光二极管模组100包括一发光二极管封装结构10以及承载发光二极管封装结构10的电路板20。
所述发光二极管封装结构10包括基板11、设置于该基板11上的引脚结构12、设置于引脚结构12上的发光二极管芯片14、覆盖该发光二极管芯片14的封装层15及形成于基板11上且收容该发光二极管芯片14的反射杯13。
具体的，所述基板11呈平板状，其包括一第一表面111和与第一表面111相对的第二表面112。本实施例中，该基板11为绝缘基板。
所述引脚结构12设置于基板11的第一表面，该引脚结构12包括相互间隔的第一电极121和第二电极122。每一电极121、122自该基板11的第一表面111延伸至反射杯13远离基板11第一表面111的顶端。
所述反射杯13包括一上表面131和与上表面131相对的一下表面132，其中部形成有贯穿上表面131及下表面132的凹槽133，该凹槽132用于收容发光二极管芯片14于其内。该凹槽133的宽度自上表面131至下表面132逐渐减小。该凹槽133的内表面可形成有高反射材料。本实施例中，该反射杯13与该基板11通过嵌入注塑技术一体成型。所述第一电极121和第二电极122均自反射杯13的下表面132延伸至反射杯13 的上表面131，延伸至反射杯13上表面131的部分的电极121、122的尺寸远大于传统单个金球的尺寸。
所述发光二极管芯片14设置在第一电极电极121、靠近第二电极122一端的表面上且收容于凹槽133的底端。该发光二极管芯片14通过导线分别与第一电极121和第二电极122形成电性连接。在本步骤中，该发光二极管芯片14也可以晶片倒装的形式固定在引脚结构12上。
所述封装层15覆盖所述发光二极管芯片14并填充满所述凹槽133。该封装层15的顶面与该反射杯13的上表面131齐平，从而封装层15的该顶面形成一出光面151。该封装层15由透明材料制成，其可由硅树脂或其他树脂，或者其他透光的混合材料制作而成。该封装层15可根据发光二极管芯片14本身的出光颜色与实际发光需求而包含有荧光粉（图未示）。
所述电路板20承载该发光二极管封装结构10，其用于将所述发光二极管封装结构10与外部电源电连接而为发光二极管封装结构10提供电能。所述电路板20大致呈板状，电路板20的上表面形成有线路21。所述电路板20对应所述出光面151的区域被镂空形成一通孔22，该通孔22的形状和尺寸与所述出光面151的形状和尺寸相同。
组装时，所述发光二极管封装结构10被倒置于电路板20上，即所述出光面151朝向所述电路板20。具体的，所述第一电极121和第二电极122与电路板20上的线路21通过导电胶30形成电性连接。
本发明中发光二极管封装结构10的第一电极121和第二电极122延伸至反射杯13上表面131的一侧并通过导电胶30与电路板20上的线路21形成电性连接，由于电极121、122延伸至反射杯13上表面131的部分的尺寸远大于传统技术中金球的尺寸，使得本实施例中发光二极管封装结构10与电路板20之间的接触面积比传统技术中金球与电路的接触面积大的多，从而提升发光二极管封装结构10的散热效率。此外，该发光二极管模组工作时，所述发光二极管芯片14发出光线自出光面151朝向电路板20射出，进而经所述通孔22出射，从而满足发光二极管模组100的特定发光需要。同时，采用导电胶30进行涂胶连接的制程简便，可降低发光二极管模组100的制造成本。
应该指出，上述实施方式仅为本发明的较佳实施方式，本领域技术人员还可在本发明精神内做其它变化。这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (6)

1.一种发光二极管模组，包括电路板及设置在电路板上的发光二极管封装结构，所述发光二极管封装结构包括基板、形成在基板上的引脚结构和反射杯、设置在引脚结构上的发光二极管芯片及覆盖所述发光二极管芯片的封装层，所述封装层的表面形成一出光面，其特征在于：所述引脚结构自基板延伸至反射杯位于出光面一侧的表面，所述引脚结构通过导电胶与电路板上的线路电性连接，所述发光二极管封装结构的出光面朝向电路板，所述电路板对应出光面的区域镂空形成一通孔，自所述出光面出射的光线经所述通孔出射。
2.如权利要求1所述的发光二极管模组，其特征在于：该通孔的形状和尺寸与所述出光面的形状和尺寸相同。
3.如权利要求1所述的发光二极管模组，其特征在于：所述基板为绝缘基板，所述反射杯与所述基板一体成型。
4.如权利要求1所述的发光二极管模组，其特征在于：所述反射杯包括靠近基板的下表面和靠近出光面且与下表面相对的一上表面，所述反射杯中部形成有贯穿上表面和下表面的凹槽，所述发光二极管芯片位于所述凹槽中，所述封装层填充满所述凹槽。
5.如权利要求1所述的发光二极管模组，其特征在于：所述出光面与反射杯的上表面齐平，所述引脚结构包括相互间隔的第一电极和第二电极，所述第一电极和第二电极位于反射杯上表面的部分通过导电胶与电路板上的线路电性连接。
6.如权利要求5所述的发光二极管模组，其特征在于：所述发光二极管芯片设置在第一电极的、靠近第二电极一端的表面上，所述发光二极管芯片通过导线分别与第一电极和第二电极形成电性连接。
CN201310146704.5A 2013-04-25 2013-04-25 发光二极管模组 Pending CN104124330A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105938866A (zh) * 2016-06-13 2016-09-14 开发晶照明（厦门）有限公司 Led支架和led封装结构
CN114609777A (zh) * 2022-04-07 2022-06-10 南昌虚拟现实研究院股份有限公司 异面导线结构的光学镜片及眼球追踪系统

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105938866A (zh) * 2016-06-13 2016-09-14 开发晶照明（厦门）有限公司 Led支架和led封装结构
CN114609777A (zh) * 2022-04-07 2022-06-10 南昌虚拟现实研究院股份有限公司 异面导线结构的光学镜片及眼球追踪系统

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Application publication date: 20141029