CN104124005A - Semi-conductive layer processing technique for solid insulation switches - Google Patents

Semi-conductive layer processing technique for solid insulation switches Download PDF

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Publication number
CN104124005A
CN104124005A CN201410394392.4A CN201410394392A CN104124005A CN 104124005 A CN104124005 A CN 104124005A CN 201410394392 A CN201410394392 A CN 201410394392A CN 104124005 A CN104124005 A CN 104124005A
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China
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solid insulation
semi
conductive layer
epoxy resin
layer processing
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CN201410394392.4A
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唐韬
周振业
李水胜
刘蜀江
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Beihai Galaxy Switch Devices Co Ltd
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Beihai Galaxy Switch Devices Co Ltd
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Priority to CN201410394392.4A priority Critical patent/CN104124005A/en
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Abstract

The invention discloses a semi-conductive layer processing technique for solid insulation switches. The semi-conductive layer processing technique includes steps of adding diluent, epoxy resin and curing agent into semi-conductive slurry for modifying, mounting a die, pretreating copper conductive parts and inserts, spraying and vulcanizing semi-conductive materials, pressing and injecting insulation materials, vulcanizing in a heat preservation and pressure maintaining manner, finishing die stripping, repairing, post-curing and the like. By modifying the conductive slurry, the problem that an existing semi-conductive material is easy to fall and crack to cause quality defects is solved. The semi-conductive layer processing technique is simple, and solid insulation parts made are attractive and elegant in appearance, low in partial discharge value, safe and reliable and high in adaptive capacity to the environment.

Description

Solid insulation switch semi-conductive layer processing technology
Technical field
The invention belongs to electrical engineering technical field, particularly a kind of solid insulation switch semi-conductive layer processing technology.
Background technology
Along with the popularization of State Grid Corporation of China to solid insulation ring main unit product, solid insulation switch performance requirement is more and more higher.Partial discharge is a key index of inspection properties of product.Adopting the sealing part spraying semiconductive material of semiconductive earth shield and electric-conductor at solid insulation parts is the effective means that reduces partial discharge value.Good earth shield structure, can improve the fail safe of product, the useful life of prolongation product.After the sealing part spraying semiconductive material of electric-conductor, can eliminate burr, impurity, air gap etc. affects the factor of partial discharge value.Solid insulation parts adopt the processing technology of semiconductive ground shield to mainly contain two large classes at present, the first first completes pressure injection and rear the solidifying of solid insulation parts, then to carrying out semi-conductive layer spraying after the sandblast of solid insulation parts surface, clean and solidifying; It two is in the time producing solid insulation parts, first sprays semi-conductive layer in mould after its crystallization, then pressure injection, finally carries out rear solidifying.Said method is pressed existing relevant statement in the manufacture craft of solid insulating sleeve, the manufacture method of 201010269998.7 solid insulating circuit devices, 201310692375.4 1 kinds of solid insulation process of surface treatment in patent documentation 201010154222.0.In actual production process, also come with some shortcomings:
1. after adopting solid insulation parts to produce, then carry out semiconductive spraying, curing product, exist and stick insufficient strength, local delamination obscission, has influence on electrostatic screen effect.
2. adopt in mould, to spray semi-conductive layer and add man-hour, occur semi-conductive layer Local Cracking phenomenon.
In order to overcome the deficiency of above-mentioned insulating part semi-conductive layer processing technology, be very necessary to the improvement of semi-conductive layer processing technology.Through semiconductive material being come off and the product that ftracture carries out analysis and the test of material analysis and vitrification point test and processing process, there is larger difference in the research existing semiconductive material of discovery and epoxy resin insulation material used in vitrification point index.Document CN 103714923 A(201310692375.4 solid insulation process of surface treatment) propose to adopt tackifier to cushion bi-material inter-laminar stress between semi-conductive layer and solid insulating material.But the material behavior of semiconductive material itself does not change, so cause semi-conductive layer to occur in process of production cracking phenomena.Simultaneously, because the technique in document CN 103714923 A does not comprise release agent, die surface has carried out again blasting treatment, has increased the surface tension between manufactured goods and mould, causes the layering even that occurs ftractureing of product stripping difficulty, local semi-conductive layer to come off.Electrocondution slurry is mainly by formations such as conductive carbon powder (electrically conductive graphite), thermosetting resin, phenolic resins, ether solvents.In the rear solid insulation parts that solidified, epoxy resin has completed the change of chemical property, although by surface sand-blasting processing, improved the ability of sticking on surface, but the internal structure degree of association is not high, so there is local shedding phenomenon.The cracking phenomena that semi-conductive layer occurs in spraying process in mould is mainly that semiconductive material internal contraction stress causes.Through studying and by evidence, in semiconductive material, add the epoxide resin material of identical with solid insulation parts (or close), the tightness (connecting more between molecular link) of being combined with solid insulation parts can be obviously improved, internal contraction stress and the vitrification point parameter of semiconductive material can be improved simultaneously.Because epoxy resin has good insulation property, therefore add too much epoxy resin and will reduce the electric conductivity of electric conducting material, can in electrocondution slurry, add the better nanometer silver paste of electric conductivity or nano copper slurry and strengthen electric conductivity.Therefore in semiconductive material, adding epoxy resin and proportioning thereof is the key technology of improving semi-conductive layer processing technology.
Summary of the invention
The object of the invention is in order to overcome existing technique deficiency, a kind of simple, convenient, effective solid insulation switch semi-conductive layer processing technology is provided.
Object of the present invention is achieved through the following technical solutions: a kind of solid insulation switch semi-conductive layer processing technology, comprises the following steps:
A, semiconductive material processing: first electrocondution slurry, retarder thinner, epoxy resin, curing agent are mixed 45~55:30~40:5~10:4~10 by mass percentage, then insert vacuum stirring system and mix, be finally filled in the container of high pressure painting system stand-by;
B, solid insulation part mold is installed on press injector, and clean die cavity, then mould is carried out to preheating, the copper electric-conductor of solid insulation parts, inserts are carried out, after deburring, clean processing, carrying out preheating simultaneously;
C, treat that mold temperature is raised to 125~145 DEG C, open mould, at the release agent of 0.01~0.05 millimeter of die cavity inner surface spray one deck, then pack preheated copper electric-conductor and inserts into;
D, the semiconductive material of handling well is arrived to die cavity inner surface and copper electric-conductor surface by spray gun spraying, sprayed coating thickness 0.2-0.4 millimeter.Thickness determines according to sheet resistance value, and the scope of the resistance value R of every square centimeter is: 500 ohm≤R≤10000 ohm;
E, closed die, to injection ring epoxy resin composite material in mould, by mold heated to 135~140 DEG C, pressurize under the atmospheric pressure of 0.3-0.4MPa, insulation 35-60 minute;
F, after solid insulation parts-moulding, open mould product taken out, remove matched moulds limit, and matched moulds limit and defective place are repaired, and then carry out the rear curing processing of 8~11 hours in 135~145 DEG C of baking ovens;
G, through after solidify process solid insulation parts naturally cooling under normal temperature condition after, carry out the detections such as electric parameter, sheet resistance, partial discharge value, qualified product refill and are made into switch product.
In the technical scheme of the invention described above, do not need to change the inner surface of existing mold, mould inner surface carries out texture processing, or adopts minute surface.Copper electric-conductor surface spraying semi-conductive layer processes in the time of preheating.Electrocondution slurry is conductive carbon paste or electrically conductive graphite, or containing nano-silver powder or the conductive carbon paste of copper powder or the compound of electrically conductive graphite, in semiconductive material, the percentage by weight of conductive carbon paste or electrically conductive graphite is 15-18%.Semi-conductive layer spraying takes repeatedly to repeat spraying method, and sagging, agglomeration must not appear in each spraying.For preventing in D step separating with mould after semi-conductive layer solidifies, having sprayed after semi-conductive layer closed die in 2 minutes.Dies cavity air themperature is lower than mold temperature, and instant closed die can solve this temperature difference problem.
Described retarder thinner main component is commercially available ether solvent, phenolic resins.
Described epoxy resin and curing agent thereof select vitrification point at the bisphenol type epoxy of 90-125 DEG C.
Described release agent adopts commercially available organic silicone oil solvent based.
The each Main Ingredients and Appearance weight ratio of described epoxy resin composite material is: epoxy resin 100, curing agent 100, silicon powder 300, mill base 2.Or the proportioning parameter providing with reference to epoxy resin manufacturer.
Owing to having adopted technique scheme, the present invention's beneficial effect is compared with prior art: in electrocondution slurry, added the epoxy resin consistent with insulating material, adhesiveness has obtained reinforcement, by processing technology, has solved the problem that the semi-conductive layer of current existence comes off and ftractures; In mould, to copper electric-conductor spraying semiconductive material, avoid the secondary pollution on copper electric-conductor surface; Burr, the air gap of copper electric-conductor are effectively shielded simultaneously, shield the not clean clean impurity in copper electric-conductor surface, between epoxy resin and copper electric-conductor, play cushioning effect, effectively discharge internal stress, eliminate the air gap between copper electric-conductor and epoxy resin insulation material, thereby reduced the partial discharge value of product; The partial discharge value of the solid insulating sleeve of making through above-mentioned technique is less than 1pC, and the partial discharge value of solid insulation pole is less than 5pC; Compared with spraying again the technique of semiconductive material after the sandblast of solid insulation parts surface, cancel the rear curing link of sandblast, spraying semiconductive material link and semiconductive material, shorten the manufacturing time of product, save electric energy, reduced consumption, shorten man-hour, improved production efficiency; Adopt the present invention can not change the inner surface (texture or minute surface) of existing mold, do not increase the expense that changes mould; Employing the present invention can be without tackifier.
Brief description of the drawings
Fig. 1 is process chart of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further described.
The embodiment 1:12kV solid insulation pole technological process of production:
A, semiconductive material processing: by electrocondution slurry, retarder thinner, epoxy resin, curing agent by mass percentage first 52:34:7:7mix, then insert vacuum stirring system and mix and discharge bubble, be finally filled in the container of high pressure painting system stand-by;
B, 12kV pole mould is installed on press injector, and clean die cavity, then mould is carried out to preheating, the copper electric-conductor of solid insulation parts, inserts are carried out, after deburring, clean processing, carrying out preheating simultaneously;
C, treat that mold temperature is raised to 145 DEG C, open mould, at the release agent of 0.01~0.02 millimeter of die cavity inner surface spray one deck, with non-dust cloth sassafras except more than release agent, then pack preheated vacuum interrupter, upper leading-out terminal copper electric-conductor, lower appearance end copper electric-conductor and inserts into, wrap the silastic-layer outer surface (insulating surfaces) of vacuum interrupter with high temperature fresh-keeping film;
D, the semiconductive material of handling well is arrived to die cavity inner surface (except insulating surfaces) and copper electric-conductor surface, 0.2~0.4 millimeter of sprayed coating thickness by spray gun spraying; Taking even spraying method 4 times, all must not there is sagging, agglomeration in each spraying; The scope of the resistance value R of every square centimeter is: 500 ohm≤R≤900 ohm;
E, remove preservative film, closed die, to injection ring epoxy resin composite material (epoxy resin, curing agent, silicon powder, mill base etc.) in mould, by mold heated to 140 DEG C, pressurize under the atmospheric pressure of 0.35-0.4MPa, insulation 35 minutes;
F, after solid insulation parts-moulding, open mould product taken out, remove matched moulds limit, and matched moulds limit and defective place are repaired, and then carry out the rear curing processing of 9~10 hours in 135~145 DEG C of baking ovens;
G, naturally cooling under normal temperature condition after, carry out the detections such as electric parameter, sheet resistance, partial discharge value, qualified product refill and are made into switch product.
The embodiment 2:12kV solid insulating sleeve technological process of production:
A, semiconductive material processing: by electrocondution slurry, retarder thinner, epoxy resin, curing agent by mass percentage first 53:36:7:4mix, then insert vacuum stirring system and mix and discharge bubble, be finally filled in the container of high pressure painting system stand-by;
B, 12kV solid insulating sleeve mould is installed on press injector, and clean die cavity, then mould is carried out to preheating, the copper electric-conductor of solid insulation parts, transducer, inserts are carried out, after deburring, clean processing, carrying out preheating simultaneously;
C, treat that mold temperature is raised to 125 DEG C, open mould, at the release agent of 0.01~0.02 millimeter of die cavity inner surface spray one deck, with non-dust cloth sassafras except more than release agent, then pack preheated copper electric-conductor, charged demonstration transducer and inserts into, cover sleeve pipe taper insulating surfaces with high temperature fresh-keeping film;
D, the semiconductive material of handling well is arrived to die cavity inner surface (except insulating surfaces) and copper electric-conductor surface, 0.2 millimeter of sprayed coating thickness by spray gun spraying; Taking even spraying method 2 times, all must not there is sagging, agglomeration in each spraying; The scope of the resistance value R of every square centimeter is: 650 ohm≤R≤1000 ohm;
E, remove preservative film, closed die, to injection ring epoxy resin composite material (epoxy resin 100 weight ratios, curing agent 100 weight ratios, silicon powder 300 weight ratios, mill base 2 weight ratios etc.) in mould, by mold heated to 130~140 DEG C, pressurize under the atmospheric pressure of 0.3-0.35MPa, insulation 45-50 minute;
F, after solid insulation parts-moulding, open mould product taken out, remove matched moulds limit, and matched moulds limit and defective place are repaired, and then carry out the rear curing processing of 9~10 hours in 135~145 DEG C of baking ovens;
G, naturally cooling under normal temperature condition after, carry out the detections such as electric parameter, sheet resistance, partial discharge value, qualified product refill and are made into switch product.
The embodiment 3:12kV solid insulated busbar technological process of production:
A, semiconductive material processing: by electrocondution slurry, retarder thinner, epoxy resin, curing agent by mass percentage first 45:30:5:4mix, then insert vacuum stirring system and mix and discharge bubble, be finally filled in the container of high pressure painting system stand-by;
B, 12kV solid insulated busbar mould is installed on press injector, and clean die cavity, then mould is carried out to preheating, the copper electric-conductor of solid insulation parts, transducer, inserts are carried out, after deburring, clean processing, carrying out preheating simultaneously;
All the other steps are identical with embodiment 1.
The embodiment 4:12kV solid insulated busbar technological process of production:
A, semiconductive material processing: by electrocondution slurry, retarder thinner, epoxy resin, curing agent by mass percentage first 55:40:10:10mix, then insert vacuum stirring system and mix and discharge bubble, be finally filled in the container of high pressure painting system stand-by;
B, 12kV solid insulated busbar mould is installed on press injector, and clean die cavity, then mould is carried out to preheating, the copper electric-conductor of solid insulation parts, transducer, inserts are carried out, after deburring, clean processing, carrying out preheating simultaneously;
All the other steps are identical with embodiment 1.

Claims (5)

1. solid insulation switch semi-conductive layer processing technology, is characterized in that: comprise the following steps:
(A) semiconductive material processing: first electrocondution slurry, retarder thinner, epoxy resin, curing agent are mixed 45~55:30~40:5~10:4~10 by mass percentage, then insert vacuum stirring system and mix, be finally filled in the container of high pressure painting system stand-by;
(B) solid insulation part mold is installed on press injector, and clean die cavity, then mould is carried out to preheating, the copper electric-conductor of solid insulation parts, inserts are carried out, after deburring, clean processing, carrying out preheating simultaneously;
(C) treat that mold temperature is raised to 125~145 DEG C, open mould, at the release agent of 0.01~0.05 millimeter of die cavity inner surface spray one deck, then pack preheated copper electric-conductor and inserts into;
(D) semiconductive material of handling well is arrived to die cavity inner surface and copper electric-conductor surface by spray gun spraying, sprayed coating thickness 0.2-0.4 millimeter, thickness determines according to sheet resistance value, and the scope of the resistance value R of every square centimeter is: 500 ohm≤R≤10000 ohm;
(E) closed die, to injection ring epoxy resin composite material in mould, by mold heated to 135~140 DEG C, pressurize under the atmospheric pressure of 0.3-0.4MPa, insulation 35-60 minute;
(F) after solid insulation parts-moulding, open mould product is taken out, remove matched moulds limit, and matched moulds limit and defective place are repaired, and then carry out the rear curing processing of 8~11 hours in 135~145 DEG C of baking ovens;
(G) through after solidify process solid insulation parts naturally cooling under normal temperature condition after, carry out the detections such as electric parameter, sheet resistance, partial discharge value, qualified product refill and are made into switch product;
Described retarder thinner main component is commercially available ether solvent, phenolic resins;
Described epoxy resin and curing agent thereof select vitrification point at the bisphenol type epoxy of 90-125 DEG C;
Described release agent adopts commercially available organic silicone oil solvent based;
The each Main Ingredients and Appearance weight ratio of described epoxy resin composite material is: epoxy resin 100, curing agent 100, silicon powder 300, mill base 2.
2. solid insulation switch semi-conductive layer processing technology according to claim 1, it is characterized in that: the electrocondution slurry in described step (A) is conductive carbon paste or electrically conductive graphite, or containing nano-silver powder or the conductive carbon paste of copper powder or the compound of electrically conductive graphite, in semiconductive material, the percentage by weight of conductive carbon paste or electrically conductive graphite is 15-18%.
3. solid insulation switch semi-conductive layer processing technology according to claim 1, is characterized in that: in described step (B), solid insulation part mold inner surface is minute surface.
4. the semi-conductive layer processing technology of solid insulation switch according to claim 1, it is characterized in that: in described step (D), semiconductive material sprays to die cavity inner surface and copper electric-conductor surface for 2 ~ 4 times by spray gun, all must not there is sagging, agglomeration in each spraying.
5. solid insulation switch semi-conductive layer processing technology according to claim 1, is characterized in that: electrocondution slurry, retarder thinner, epoxy resin, curing agent 52-53:34-36:7:4-7 by mass percentage.
CN201410394392.4A 2014-08-12 2014-08-12 Semi-conductive layer processing technique for solid insulation switches Pending CN104124005A (en)

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Cited By (7)

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Publication number Priority date Publication date Assignee Title
CN105261418A (en) * 2015-11-10 2016-01-20 江苏士林电气设备有限公司 A three-layer co-extrusion ethylene-propylene high-voltage insulating tube bus
CN105489418A (en) * 2015-12-31 2016-04-13 宝鸡市晨光真空电器有限责任公司 Fixing and packaging process for fixed-packaged type post terminal module for outdoor high voltage vacuum circuit breaker
CN106376111A (en) * 2016-09-07 2017-02-01 芜湖桑乐金电子科技有限公司 Bendable carbon crystal heating plate and preparation method therefor
CN106376109A (en) * 2016-09-07 2017-02-01 芜湖桑乐金电子科技有限公司 Anti-aging carbon crystal heating plate and preparation method therefor
CN108320990A (en) * 2018-01-06 2018-07-24 北海银河开关设备有限公司 A kind of electric locomotive circuit breaker polar
CN111069004A (en) * 2019-12-26 2020-04-28 宁波索立安电气有限公司 Bonding sealing process between copper conductive piece and epoxy resin
CN114656859A (en) * 2022-03-25 2022-06-24 国网江苏省电力有限公司电力科学研究院 Method for inhibiting GIS free metal particles based on semi-conductive coating layer

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CN101722589A (en) * 2008-10-24 2010-06-09 上海雷博司电器有限公司 Method for processing surface of insert in vacuum pouring and APG process by using semi-conductive rubber
CN101800100A (en) * 2010-04-23 2010-08-11 广西银河迪康电气有限公司 Manufacture technology of middle pressure solid insulating sleeve
CN101958166A (en) * 2010-09-02 2011-01-26 广西银河迪康电气有限公司 Manufacture method of solid insulating circuit device
CN103714923A (en) * 2013-12-18 2014-04-09 厦门涛福精密机械有限公司 Solid insulating piece surface treatment technology

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CN101127280A (en) * 2007-08-03 2008-02-20 北海银河开关设备有限公司 Production technology for solid sealing electrode pole of high voltage vacuum breaker
CN101722589A (en) * 2008-10-24 2010-06-09 上海雷博司电器有限公司 Method for processing surface of insert in vacuum pouring and APG process by using semi-conductive rubber
CN101800100A (en) * 2010-04-23 2010-08-11 广西银河迪康电气有限公司 Manufacture technology of middle pressure solid insulating sleeve
CN101958166A (en) * 2010-09-02 2011-01-26 广西银河迪康电气有限公司 Manufacture method of solid insulating circuit device
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105261418A (en) * 2015-11-10 2016-01-20 江苏士林电气设备有限公司 A three-layer co-extrusion ethylene-propylene high-voltage insulating tube bus
CN105261418B (en) * 2015-11-10 2017-11-28 江苏士林电气设备有限公司 A kind of the third high-voltage insulating tube of three-layer co-extruded second bus
CN105489418A (en) * 2015-12-31 2016-04-13 宝鸡市晨光真空电器有限责任公司 Fixing and packaging process for fixed-packaged type post terminal module for outdoor high voltage vacuum circuit breaker
CN106376111A (en) * 2016-09-07 2017-02-01 芜湖桑乐金电子科技有限公司 Bendable carbon crystal heating plate and preparation method therefor
CN106376109A (en) * 2016-09-07 2017-02-01 芜湖桑乐金电子科技有限公司 Anti-aging carbon crystal heating plate and preparation method therefor
CN108320990A (en) * 2018-01-06 2018-07-24 北海银河开关设备有限公司 A kind of electric locomotive circuit breaker polar
CN111069004A (en) * 2019-12-26 2020-04-28 宁波索立安电气有限公司 Bonding sealing process between copper conductive piece and epoxy resin
CN114656859A (en) * 2022-03-25 2022-06-24 国网江苏省电力有限公司电力科学研究院 Method for inhibiting GIS free metal particles based on semi-conductive coating layer

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