CN104112809A - 一种倒装led芯片及其封装方法 - Google Patents

一种倒装led芯片及其封装方法 Download PDF

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CN104112809A
CN104112809A CN201410299452.4A CN201410299452A CN104112809A CN 104112809 A CN104112809 A CN 104112809A CN 201410299452 A CN201410299452 A CN 201410299452A CN 104112809 A CN104112809 A CN 104112809A
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substrate
flip led
led chips
electrode
chip
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韩蕊蕊
马淑芳
梁建
田海军
徐小红
王金良
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SHANXI FEIHONG MICRO-NANO PHOTOELECTRONICS &TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明涉及一种倒装LED芯片及其封装方法，本发明涉及LED技术的相关领域，主要涉及倒装芯片、散热底座及基板。所述倒装LED芯片包括，依次叠加的透明衬底、N型GaN层、载流子复合层、P型GaN层。所述芯片的表面制作有N型电极、P型电极及将二者隔开的绝缘层。所述基板有多种材质制作的基板，所述基板含有金属连接点及与外部链接的电路。所述芯片电极可采用多种方式与基板金属连接点相连制成发光二极管，将此发光二极管放至涂有荧光粉的外壳中就得到了发光器件。本发明得到的发光器件具有功率高、散热效果好、优化封装工艺、节省生产成本等特点。

Description

一种倒装LED芯片及其封装方法
技术领域
本发明涉及一种倒装LED芯片及其封装方法，属于LED半导体领域。
背景技术
目前的倒装LED芯片，封装步骤多，成本高，散热效果不好。
发明内容
本发明涉及一种倒装LED芯片，所述芯片包括依次叠加的透明衬底、N型GaN层、载流子复合层、P型GaN层；所述芯片的N电极和P电极与基板金属连接点相连制成发光二极管。
本发明还提供一种倒装LED芯片的封装方法，其包括以下步骤：
1)采用U型图案，刻蚀到N型GaN层，刻蚀深度约为0.5-2um；
2)在P面上蒸镀ITO或Ni\Ag，厚度约0.1～0.2μm；
3)蒸镀Gr、Al、Pt或Au中的一种或几种作为导电层，厚度约为1.5～2μm；
4)蒸镀SiO2绝缘层，厚度约为0.3～0.8μm；
5)蒸镀Gr、Al、Pt或Au中的一种或几种作为导电电极，并加厚电极，厚度约为1～2μm。
采用此倒装LED芯片的制作方法，得到的倒装芯片P电极和N电极可最大面积导通，并且将二者很好的绝缘开。制作得到的电极面积较大，可使得芯片与基板连接已操作，连接方式多样且牢固，可以提高封装效率。芯片与基板直接连接，减少了封装步骤，节省成本。采用三种焊接方式，由于没有金线焊垫阻挡，电流流通快，电阻小，产生的热量低，能将热量很快传导到基板。采用的三种基板，热传导快，散热效果好。基板上铺好电路，可以封装成一个或者多个发光器件，该封装方法简单，易于操作。外壳均匀旋涂荧光粉，安装在发光器件外部，操作简单，发光强度大。
附图说明
通过参照附图更详细地描述本发明的示例性实施例，本发明的以上和其它方面及优点将变得更加易于清楚，在附图中：
图1为本发明的倒装LED芯片制作过程示意图；
图2为本发明的倒装LED封装器件结构示意图。
附图标记：1、透明衬底；2、N型GaN层；3、载流子复合层；4、P型GaN层；5、绝缘层；6、P电极；7、N电极；8、金属连接点；9、基板。
具体实施方式
在下文中，现在将参照附图更充分地描述本发明，在附图中示出了各种实施例。然而，本发明可以以许多不同的形式来实施，且不应该解释为局限于在此阐述的实施例。相反，提供这些实施例使得本公开将是彻底和完全的，并将本发明的范围充分地传达给本领域技术人员。
在下文中，将参照附图更详细地描述本发明的示例性实施例。
参考附图1-2，一种倒装LED芯片，依次叠加的透明衬底、N型GaN层、载流子复合层、P型GaN层。经过一系列工艺制成的倒装LED芯片的N电极和P
电极与基板金属连接点相连制成发光二极管，将此发光二极管放至涂有荧光粉的外壳中就得到了发光器件。
一种倒装LED芯片的封装方法，其包括以下步骤：
1)采用U型图案，刻蚀到N型GaN层，刻蚀深度约为0.5-2um；
2)在P面上蒸镀ITO或Ni\Ag(黑色部分是有ITO或Ni\Ag，白色部分是没有的)，厚度约0.1～0.2μm；
3)蒸镀Gr、Al、Pt或Au中的一种或几种作为导电层(黑色部分是有蒸镀金属的部分，白色部分未蒸镀金属)，厚度约为1.5～2μm；
4)蒸镀SiO2绝缘层(黑色部分是有SiO2保护的地方，白色部分没有)，厚度约为0.3～0.8μm；
5)蒸镀Gr、Al、Pt或Au中的一种或几种作为导电电极，并加厚电极，厚度约为1～2μm。(黑色部分是有蒸镀金属的部分，左边是N电极，右边的是P电极，空白部分未蒸镀)。
制作出来的倒装LED芯片电极接触面积大，电流扩散快，散热效果好，易于后期封装。
所述倒装LED芯片置于基板金属点上与基板相连，可通过三种方式：(1)覆晶方式(铅锡球或者热超声覆晶)；(2)焊锡方式；(3)焊锡合金方式。
所述基板有四种：(1)铝基板；(2)碳纤维基板；(3)采用涂有碳纳纤维材料的金属的基板；(4)钼合金基板。
所述基板已铺好线路。基板上设有连接外部电路的电极(正、负极)，并且有一个或多个芯片连接点，用于连接一个或多个倒装LED芯片。
外壳直接均匀旋涂荧光粉，安装在封装器件外部，且外壳可选用长柱形、方形、圆形等多种外形。
以上所述仅为本发明的实施例而已，并不用于限制本发明。本发明可以有各种合适的更改和变化。凡在本发明的精神和原则之内所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

1.一种倒装LED芯片，其特征在于：所述芯片包括依次叠加的透明衬底、N型GaN层、载流子复合层、P型GaN层；所述芯片的N电极和P电极与基板金属连接点相连制成发光二极管。
2.根据权利要求2所述的倒装LED芯片，其特征在于：所述倒装LED芯片置于基板金属点上与基板相连，可通过三种方式：(1)覆晶方式；(2)焊锡方式；(3)焊锡合金方式。
3.根据权利要求1所述的倒装LED芯片，其特征在于：基板选用以下四种之一：(1)铝基板；(2)碳纤维基板；(3)采用涂有碳纳纤维材料的金属的基板；(4)钼合金基板。
4.根据权利要求4所述的倒装LED芯片，其特征在于：基板上设有连接外部电路的电极，并且有一个或多个芯片连接点，用于连接一个或多个倒装LED芯片。
5.根据权利要求1所述的倒装LED芯片，其特征在于：外壳直接均匀旋涂荧光粉，安装在封装器件外部，且外壳可选用长柱形、方形、圆形等多种外形。
6.一种根据权利要求1所述的倒装LED芯片的封装方法，其特征在于：其包括以下步骤：
1)采用U型图案，刻蚀到N型GaN层，刻蚀深度约为0.5-2um；
2)在P面上蒸镀ITO或Ni\Ag，厚度约0.1～0.2μm；
3)蒸镀Gr、Al、Pt或Au中的一种或几种作为导电层，厚度约为1.5～2μm；
4)蒸镀SiO2绝缘层，厚度约为0.3～0.8μm；
5)蒸镀Gr、Al、Pt或Au中的一种或几种作为导电电极，并加厚电极，厚度约为1～2μm。
7.根据权利要求2所述的方法，其特征在于：所述倒装LED芯片置于基板金属点上与基板相连，可通过三种方式：(1)覆晶方式；(2)焊锡方式；(3)焊锡合金方式。
8.根据权利要求1所述的方法，其特征在于：基板选用以下四种之一：(1)铝基板；(2)碳纤维基板；(3)采用涂有碳纳纤维材料的金属的基板；(4)钼合金基板。
9.根据权利要求4所述的方法，其特征在于：基板上设有连接外部电路的电极，并且有一个或多个芯片连接点，用于连接一个或多个倒装LED芯片。
10.根据权利要求1所述的方法，其特征在于：外壳直接均匀旋涂荧光粉，安装在封装器件外部，且外壳可选用长柱形、方形、圆形等多种外形。
CN201410299452.4A 2014-06-26 2014-06-26 一种倒装led芯片及其封装方法 Pending CN104112809A (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101097978A (zh) * 2007-06-26 2008-01-02 上海大学 铜互连倒装芯片发光二极管及其制备方法
CN101107726A (zh) * 2004-12-08 2008-01-16 富士电机控股株式会社 有机el元件
CN101656260A (zh) * 2009-09-08 2010-02-24 厦门市三安光电科技有限公司 一种抗静电氮化镓基发光器件及其制作方法
CN101982883A (zh) * 2010-09-01 2011-03-02 晶科电子（广州）有限公司 一种由倒装发光单元阵列组成的发光器件及其制造方法
CN102237470A (zh) * 2010-04-29 2011-11-09 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法以及其基座的制造方法
CN103151442A (zh) * 2013-02-06 2013-06-12 芜湖德豪润达光电科技有限公司 一种led芯片倒装的led光源及其制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101107726A (zh) * 2004-12-08 2008-01-16 富士电机控股株式会社 有机el元件
CN101097978A (zh) * 2007-06-26 2008-01-02 上海大学 铜互连倒装芯片发光二极管及其制备方法
CN101656260A (zh) * 2009-09-08 2010-02-24 厦门市三安光电科技有限公司 一种抗静电氮化镓基发光器件及其制作方法
CN102237470A (zh) * 2010-04-29 2011-11-09 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法以及其基座的制造方法
CN101982883A (zh) * 2010-09-01 2011-03-02 晶科电子（广州）有限公司 一种由倒装发光单元阵列组成的发光器件及其制造方法
CN103151442A (zh) * 2013-02-06 2013-06-12 芜湖德豪润达光电科技有限公司 一种led芯片倒装的led光源及其制造方法

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Application publication date: 20141022