CN104112787A - Solar battery with silver sulfide/perovskite heterojunction and preparation method thereof - Google Patents
Solar battery with silver sulfide/perovskite heterojunction and preparation method thereof Download PDFInfo
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- CN104112787A CN104112787A CN201410364933.9A CN201410364933A CN104112787A CN 104112787 A CN104112787 A CN 104112787A CN 201410364933 A CN201410364933 A CN 201410364933A CN 104112787 A CN104112787 A CN 104112787A
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- perovskite
- silver sulfide
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- 229910052946 acanthite Inorganic materials 0.000 title claims abstract description 34
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229940056910 silver sulfide Drugs 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 43
- 239000000243 solution Substances 0.000 claims description 27
- 239000002243 precursor Substances 0.000 claims description 25
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 24
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 18
- 238000004528 spin coating Methods 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 12
- 239000006185 dispersion Substances 0.000 claims description 10
- 239000012456 homogeneous solution Substances 0.000 claims description 10
- 239000011259 mixed solution Substances 0.000 claims description 10
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 9
- CJMMRHSQOBXFOG-UHFFFAOYSA-N [O--].[O--].[Al+3].[Ag+] Chemical compound [O--].[O--].[Al+3].[Ag+] CJMMRHSQOBXFOG-UHFFFAOYSA-N 0.000 claims description 6
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 claims description 6
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 claims description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000001556 precipitation Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 229910021595 Copper(I) iodide Inorganic materials 0.000 claims description 3
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 235000019260 propionic acid Nutrition 0.000 claims description 3
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 229910052791 calcium Inorganic materials 0.000 claims 3
- 239000011575 calcium Substances 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 239000000463 material Substances 0.000 abstract description 6
- 238000005245 sintering Methods 0.000 abstract description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical group CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of solar batteries based on organic-inorganic hybridized perovskite materials and in particular relates to a solar battery with silver sulfide/perovskite heterojunction and a preparation method thereof. The solar battery with the silver sulfide/perovskite heterojunction comprises an ITO (indium tin oxid) substrate layer, a CuInS2 layer arranged above the ITO substrate layer, a nano-alumina-silver sulfide-perovskite composite layer arranged above the layer CuInS2 layer and a silver layer arranged above the nano-alumina-silver sulfide-perovskite composite layer. The solar battery with the silver sulfide/perovskite heterojunction can be prepared without sintering at the high temperature due to the structure, the flexible ITO substrate is low in costs, and the mixture of silver sulfide and perovskite is good in film-forming performance.
Description
Technical field
The perovskite material that the invention belongs to hybrid inorganic-organic is basic technical field of solar batteries, relates in particular to a kind of solar cell with silver sulfide/perovskite bulk heterojunction and preparation method thereof.
Background technology
Because fossil energy is a kind of non-renewable resources, along with the consumption day by day of fossil energy, the development and utilization of new forms of energy always is the focus that science researcher pays close attention to, solar energy has been proved and can have substituted to a certain extent fossil energy as a kind of clean energy resource at present, solar cell is a kind of effective means of utilizing solar energy, silica-based comparative maturity of inorganic solar cell at present, transformation efficiency can reach 25～30%.But the production cost of silica-based solar cell is high, with and rigidity cannot carry out too greatly the large-scale application that has all limited silica-based solar cell such as bending.
Invent in the research group of Korea S Cheng Jun shop university in 2009 solar cell that a kind of perovskite material with hybrid inorganic-organic is made, this battery develops into its transformation efficiency now and has reached 15%, and its material easily makes, with low cost, can process by solution process, this large-scale application for its future is laid a good foundation.
According to existing bibliographical information, be all at present to adopt following structure: FTO/TiO mostly taking perovskite material as its structure of basic solar cell
2/ perovskite/HTM/Au.The battery of this structure first cost of FTO is higher, and need to be on FTO sintering TiO
2, its sintering temperature is more than 450 DEG C, and the HTM layer material that secondly this structure adopts is very expensive, moreover pure perovskite filming performance is very poor, and the success rate of element manufacturing is very low, easily has the phenomenon of partial short-circuit to occur.
Summary of the invention
For solving the deficiencies in the prior art, the invention provides a kind of silver sulfide/perovskite bulk heterojunction solar cell and preparation method thereof.The structure that solar cell provided by the present invention adopts is: ITO/ copper indium sulphur/aluminium oxide+silver sulfide+perovskite/Ag.Adopt this structure need not be again sintering at high temperature, and flexible ITO substrate low price, the mixture filming performance of silver sulfide and perovskite is good.
A kind of silver sulfide/perovskite bulk heterojunction solar cell, comprises ITO basalis, is positioned at the CuInS on described ITO basalis
2layer, be positioned at described CuInS
2nano aluminium oxide-silver sulfide-perovskite composite bed on layer and be positioned at the silver layer on described nano aluminium oxide-silver sulfide-perovskite composite bed.
Preferably, described CuInS
2the thickness of layer is 100nm～500nm.
Preferably, the thickness of described nano aluminium oxide-silver sulfide-perovskite composite bed is 200nm～600nm, and its preparation method is:
1) at described CuInS
2the isopropyl alcohol dispersion liquid of spin coating nano aluminium oxide on layer.
2) on described nano oxidized aluminium lamination, drip the precursor mixed solution that is coated with silver sulfide and perovskite, dripping the amount being coated with is 5～10uL/cm
2, the 5～30min that then anneals under 90～120 DEG C of conditions, described silver sulfide and perovskite precursor mixed solution preparation method are:
The silver nitrate that is 1:1 by the ratio of amount of substance and thiocarbamide join in the precursor solution of perovskite and form homogeneous solution, wherein, in described homogeneous solution, the concentration of the amount of substance of silver is 0.2～0.4mmol/L, and the precursor solution of described perovskite is that quality percentage composition is 40% CH
3nH
3pbI
3dMF solution.
The present invention also provides a kind of preparation method of silver sulfide/perovskite bulk heterojunction solar cell, comprises the following steps:
A. flexible ITO substrate is used successively to absolute ethyl alcohol, acetone, deionized water supersound washing 10min, dried;
B. prepare CuInS
2precursor solution: the indium acetate, thiocarbamide, propionic acid and the butylamine that are 1:5:5:62.5 by the ratio of amount of substance mix, form the transparent solution without precipitation, then the cuprous iodide equating with indium acetate amount of substance is joined to the described transparent solution without precipitation, carry out ultrasonic dispersion, obtain CuInS2 homogeneous solution.
C. spin coating CuInS in ITO substrate
2precursor solution, rotating speed is 3000～5000rpm, and the spin coating time is 20～40 seconds, and the 10min that first anneals under 150 degree, and then the 20min that anneals under 200 degree, obtain the CuInS on ITO layer
2layer film.
D. at CuInS
2the isopropyl alcohol dispersion liquid of spin coating nano aluminium oxide on layer, rotating speed is 2000～4000rpm, and the spin coating time is 20～40 seconds, and then anneal 20min under 120～180 degree.Nano oxidized alfol dispersion liquid that described nano aluminium oxide divides the loose liquid of isopropyl alcohol can be selected from Aladdin (Aladdin) brand dilutes and gets, the nano oxidized alfol dispersion liquid specification of buying gained is solid content 20wt%, and particle diameter is less than 30nm.
E. on alumina layer, drip the precursor mixed solution that is coated with silver sulfide and perovskite, dripping the amount being coated with is 5～10uL/cm2, and 5～30min then anneals under 90～120 degree.
Described silver sulfide and perovskite precursor mixed solution are prepared as follows: the silver nitrate that is 1:1 by the ratio of amount of substance and thiocarbamide join in the precursor solution of perovskite and form homogeneous solution, among perovskite (CH in perovskite solution
3nH
3pbI
3) mass fraction be 40%, volume is DMF, silver nitrate and thiocarbamide addition are 0.2～0.4mmol/L.
F. on the mixed layer of silver sulfide and perovskite, brush one deck silver slurry by the method for silk screen printing, under 80～120 degree, make it curing.
Brief description of the drawings
Fig. 1 is the i-v curve figure of the device that obtains of embodiment 1.
Fig. 2 is the i-v curve figure of the device that obtains of embodiment 2.
Fig. 3 is the i-v curve figure of the device that obtains of embodiment 3.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, illustrated embodiment, only for explaining the present invention, is not intended to limit scope of the present invention.
Embodiment 1
(1) flexible ITO substrate is used successively to absolute ethyl alcohol, acetone, deionized water supersound washing 10min, dried;
(2) prepare CuInS
2precursor solution: the indium acetate, thiocarbamide, propionic acid and the butylamine that are 1:5:5:62.5 by the ratio of amount of substance mix, form the transparent solution without precipitation, then the cuprous iodide equating with indium acetate amount of substance is joined to the described transparent solution without precipitation, carry out ultrasonic dispersion, obtain CuInS
2homogeneous solution.
(3) spin coating CuInS in ITO substrate
2precursor solution, rotating speed is 4000rpm, and the spin coating time is 30 seconds, and the 10min that first anneals under 150 degree, and then the 20min that anneals under 200 degree, obtain the CuInS on ITO layer
2layer film.
(4) at CuInS
2the isopropyl alcohol dispersion liquid of spin coating nano aluminium oxide on layer, rotating speed is 3000rpm, and the spin coating time is 30 seconds, and then anneal 20min under 150 degree.It is to dilute and get with the nano oxidized alfol dispersion liquid of desire to buy Aladdin that described nano aluminium oxide divides the loose liquid of isopropyl alcohol, and the nano oxidized alfol dispersion liquid specification of buying gained is solid content 20wt%, and particle diameter is less than 30nm.
(5) on alumina layer, drip the precursor mixed solution that is coated with silver sulfide and perovskite, dripping the amount being coated with is 8uL/cm2, and 10min then anneals under 100 degree.
Described silver sulfide and perovskite precursor mixed solution are prepared as follows: the silver nitrate that is 1:1 by the ratio of amount of substance and thiocarbamide join in the precursor solution of perovskite and form homogeneous solution, among in perovskite solution the mass fraction of perovskite be 40%, silver nitrate and thiocarbamide addition are 0.2mmol/L.
(6) on the mixed layer of silver sulfide and perovskite, brush one deck silver slurry by the method for silk screen printing, under 100 degree, make it curing.
It is 0.65V that obtained device test obtains open circuit voltage, and short circuit current is 7.8mA, and fill factor, curve factor is 0.3, and efficiency is 1.52%.The i-v curve of device as shown in Figure 1.
Embodiment 2
Compared with embodiment 1, its difference is that the addition of the middle silver nitrate of step (5) and thiocarbamide is 0.3mmol/L.
It is 0.63V that obtained device test obtains open circuit voltage, and short circuit current is 3.5mA, and fill factor, curve factor is 0.4, and efficiency is 0.88%.The i-v curve of device as shown in Figure 2.
Embodiment 3
Compared with embodiment 1, its difference is that the addition of the middle silver nitrate of step (5) and thiocarbamide is 0.4mmol/L.
It is 0.65V that obtained device test obtains open circuit voltage, and short circuit current is 9.2mA, and fill factor, curve factor is 0.3, and efficiency is 1.71%.The i-v curve of device as shown in Figure 3.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. silver sulfide/perovskite bulk heterojunction solar cell, is characterized in that, comprises ITO basalis, is positioned at the CuInS on described ITO basalis
2layer, be positioned at described CuInS
2nano aluminium oxide-silver sulfide-perovskite composite bed on layer and be positioned at the silver layer on described nano aluminium oxide-silver sulfide-perovskite composite bed.
2. silver sulfide/perovskite bulk heterojunction solar cell according to claim 1, is characterized in that: described CuInS
2the thickness of layer is 100nm～500nm.
3. silver sulfide/perovskite bulk heterojunction solar cell according to claim 1, is characterized in that: the thickness of described nano aluminium oxide-silver sulfide-perovskite composite bed is 200nm～600nm, and its preparation method is:
1) at described CuInS
2the isopropyl alcohol dispersion liquid of spin coating nano aluminium oxide on layer;
2) on described nano oxidized aluminium lamination, drip the precursor mixed solution that is coated with silver sulfide and perovskite, dripping the amount being coated with is 5～10uL/cm
2, the 5～30min that then anneals under 90～120 DEG C of conditions, wherein, described silver sulfide and perovskite precursor mixed solution preparation method are:
The silver nitrate that is 1:1 by the ratio of amount of substance and thiocarbamide join in the precursor solution of perovskite and form homogeneous solution, wherein, in described homogeneous solution, the concentration of the amount of substance of silver is 0.2～0.4mmol/L, and the precursor solution of described perovskite is that quality percentage composition is 40% CH
3nH
3pbI
3dMF solution.
4. a preparation method for silver sulfide/perovskite bulk heterojunction solar cell, is characterized in that, comprises the following steps:
1) spin coating CuInS in clean ITO substrate
2precursor solution, rotating speed is 3000～5000rpm, and the spin coating time is 20～40 seconds, and after spin coating, the 10min that first anneals under 150 DEG C of conditions, and then the 20min that anneals under 200 DEG C of conditions, obtain ITO/CuInS
2layer;
2) in step 1) ITO/CuInS that obtains
2the isopropyl alcohol dispersion liquid of spin coating nano aluminium oxide on layer, rotating speed is 2000～4000rpm, and the spin coating time is 20～40 seconds, and the 20min that then anneals under 120～180 DEG C of conditions, obtains ITO/CuInS
2/ alumina layer;
3) in step 2) ITO/CuInS that obtains
2on/alumina layer, drip the precursor mixed solution that is coated with silver sulfide and perovskite, dripping the amount being coated with is 5～10uL/cm
2, the 5～30min that then anneals under 90～120 DEG C of conditions, obtains ITO/CuInS
2/ aluminium oxide+silver sulfide+calcium titanium ore bed;
4) in step 3) ITO/CuInS that obtains
2on/aluminium oxide+silver sulfide+calcium titanium ore bed, brush one deck silver slurry by the method for silk screen printing, under 80～120 degree, make it curing, obtain ITO/CuInS
2/ aluminium oxide+silver sulfide+calcium titanium ore bed/Ag solar cell.
5. the preparation method of silver sulfide/perovskite bulk heterojunction solar cell according to claim 4, is characterized in that described step 1) in described CuInS
2the preparation method of precursor solution is: the indium acetate, thiocarbamide, propionic acid and the butylamine that are 1:5:5:62.5 by the ratio of amount of substance mix, form the transparent solution without precipitation, then the cuprous iodide equating with indium acetate amount of substance is joined to the described transparent solution without precipitation, carry out ultrasonic dispersion, obtain the CuInS of homogeneous
2precursor solution.
6. the preparation method of silver sulfide/perovskite bulk heterojunction solar cell according to claim 4, is characterized in that described step 2) in the solid content of isopropyl alcohol dispersion liquid of described nano aluminium oxide be 20wt%, the particle diameter of aluminium oxide is less than 30nm.
7. the preparation method of silver sulfide/perovskite bulk heterojunction solar cell according to claim 4, it is characterized in that, described step 3) in described silver sulfide and perovskite precursor mixed solution preparation method be: the silver nitrate that is 1:1 by the ratio of amount of substance and thiocarbamide join in the precursor solution of perovskite and form homogeneous solution, wherein, in described homogeneous solution, the concentration of the amount of substance of silver is 0.2～0.4mmol/L, and the precursor solution of described perovskite is that quality percentage composition is 40% CH
3nH
3pbI
3dMF solution.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047826A (en) * | 2015-08-12 | 2015-11-11 | 武汉鑫神光电科技有限公司 | Perovskite solar cell with cadmium sulfide-doped perovskite layer and preparation method of perovskite solar cell |
| CN105070842A (en) * | 2015-08-13 | 2015-11-18 | 河南大学 | Perovskite solar cell and preparation method thereof |
| CN106450007A (en) * | 2016-12-05 | 2017-02-22 | 济南大学 | Solar cell based on cuprous iodide/calcium titanium ore bulk heterojunction and preparation method thereof |
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| US20030183080A1 (en) * | 2002-03-05 | 2003-10-02 | Mundschau Michael V. | Hydrogen transport membranes |
| CN1856883A (en) * | 2003-08-26 | 2006-11-01 | 新日本石油株式会社 | Photoelectric conversion device |
| CN1719619A (en) * | 2004-07-08 | 2006-01-11 | 住友化学株式会社 | Porous electrode,apparatus containing same and mfg. method thereof |
| CN102067375A (en) * | 2008-06-24 | 2011-05-18 | 松下电工株式会社 | Dye-sensitized solar cell |
| CN102265453A (en) * | 2008-10-29 | 2011-11-30 | 富士胶片株式会社 | Dye, photoelectric conversion element and photoelectrochemical cell each comprising the dye, and process for producing dye |
| CN102439092A (en) * | 2009-05-22 | 2012-05-02 | 松下电工株式会社 | Light-absorbing material and photoelectric conversion element |
| US20120267234A1 (en) * | 2011-04-22 | 2012-10-25 | Sun Catalytix Corporation | Nanostructures, Systems, and Methods for Photocatalysis |
| CN103477408A (en) * | 2011-12-28 | 2013-12-25 | 松下电器产业株式会社 | Photoelectric element and method for manufacturing same |
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| CN105047826A (en) * | 2015-08-12 | 2015-11-11 | 武汉鑫神光电科技有限公司 | Perovskite solar cell with cadmium sulfide-doped perovskite layer and preparation method of perovskite solar cell |
| CN105047826B (en) * | 2015-08-12 | 2017-12-15 | 武汉鑫神光电科技有限公司 | A kind of perovskite solar cell that cadmium sulfide is mixed in calcium titanium ore bed and preparation method thereof |
| CN105070842A (en) * | 2015-08-13 | 2015-11-18 | 河南大学 | Perovskite solar cell and preparation method thereof |
| CN105070842B (en) * | 2015-08-13 | 2017-06-16 | 河南大学 | A kind of perovskite solar cell and preparation method thereof |
| CN106450007A (en) * | 2016-12-05 | 2017-02-22 | 济南大学 | Solar cell based on cuprous iodide/calcium titanium ore bulk heterojunction and preparation method thereof |
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