CN102074592A - Light absorption layer of copper indium gallium selenide (CIGS) solar cell and manufacturing method thereof - Google Patents
Light absorption layer of copper indium gallium selenide (CIGS) solar cell and manufacturing method thereof Download PDFInfo
- Publication number
- CN102074592A CN102074592A CN2009102239552A CN200910223955A CN102074592A CN 102074592 A CN102074592 A CN 102074592A CN 2009102239552 A CN2009102239552 A CN 2009102239552A CN 200910223955 A CN200910223955 A CN 200910223955A CN 102074592 A CN102074592 A CN 102074592A
- Authority
- CN
- China
- Prior art keywords
- layer
- sol gel
- selenide
- light
- gallium selenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a light absorption layer of a copper indium gallium selenide (CIGS) solar cell and a manufacturing method thereof. The method comprises the following steps of: forming a cuprous sulfide layer by utilizing a sputtering method; forming a plurality of CIGS stacking layers by utilizing a CIGS sol-gel solution in a soaking, rotating, printing or spraying mode by matching with pre-drying; then fusing the cuprous sulfide layer and the CIGS stacking layers to form a CIGS light absorption layer by utilizing quick heating heat treatment so as to form the CIGS solar cell having high photoelectric conversion efficiency and high light absorbancy.
Description
Technical field
The present invention relates to a kind of copper indium gallium selenium solar cell and manufacture method thereof, relate in particular to the structure and the manufacture method thereof of the light-absorption layer of copper indium gallium selenium solar cell.
Background technology
Along with petering out of fossil energy; seeking reliable and stable alternative energy source has been the maximum existence problem that this century, all mankind will face; and comprise the various energy of bioenergy, geothermal energy resources, wind energy, nuclear energy; under the consideration of from the horse's mouth degree, safety in utilization, environmental protection; all less than the solar energy of taking from solar radiation; because go up at the earth's surface all and can receive sunlight; and just transform light energy is become electric energy in the use; and produce without any the material of contaminative, so solar energy is the cleanest at present alternative energy source.
Solar cell is the device that the transform light energy of sunlight is become the convenient electric energy that uses, in numerous solar cells, (Copper/Indium/Gallium/Selenium, CIGS) solar cell obtains owing to the excellent properties of high absorptance and photoelectric conversion efficiency to pay attention to Copper Indium Gallium Selenide gradually.
The CIGS solar cell is by copper indium diselenide (Copper/Indium/Selenium, CIS) solar cell evolution.The CIS solar cell mainly comprises CuInSe2, belong to the Direct Transfer semiconductor, especially absorptivity is high, CuInSe2 forbids that being with the width of cloth (Eg) is 1eV, less than the 1.4-1.5eV that is best suited for solar cell, therefore the CuGaSe2 higher band web materials with Eg=1.6eV forms Cu (InGa) Se2, that is so-called CIGS mixed crystal material, forbids being with the width of cloth with raising.
Consult Fig. 1, be the schematic diagram of the CIGS solar cell of prior art.As shown in Figure 1, CIGS solar cell 1 generally comprises glass substrate 10, backplate layer 20, CIGS light-absorption layer 30, resilient coating 80 and transparent electrode layer 90, wherein backplate layer 20 is in order to conduction, generally be to use molybdenum, CIGS light-absorption layer 30 is the p type semiconductor layer, topmost effect is an extinction, resilient coating 80 typically uses cadmium sulfide (CdS), in order to form the n N-type semiconductor N, and transparent electrode layer 90 mainly utilize zinc oxide aluminum (Aluminum Zinc Oxide, AZO), indium zinc oxide (Indium Zinc Oxide, IZO) or indium tin oxide target (Indium Tin Oxide, ITO), has high light transmittance and conductivity.Sunlight L from top to bottom injects CIGS solar cell 1, penetrate transparent electrode layer 90 and resilient coating 80 and arrived CIGS light-absorption layer 30, after CIGS light-absorption layer 30 absorbs, produce the electric hole duplet of tool current potential energy, and conduct to the outside and electric energy is provided by transparent electrode layer 90 and backplate layer 20 respectively.
Consult Fig. 2, be the schematic diagram of another CIGS solar cell of prior art.As shown in Figure 2,, therefore can between CIGS light-absorption layer 30 and backplate layer 20, add the alloy-layer 22 that comprises molybdenum copper aluminium silver, be used as the matchmaker and close layer, to strengthen stickiness backplate layer 20 because CIGS light-absorption layer 30 is not good with the stickiness of backplate layer 20.On alloy-layer 22, add cuprous sulfide layer (or Berzeline layer) 24 simultaneously, use and regulate alloy-layer 22 and the heat between the light-absorption layer 30 bloated difference of coefficients of splashing, with avoid having different heat splash expand alloy-layer 22 and the light-absorption layer 30 of coefficient in follow-up heat treatment in interface place generation shearing effect and peel off mutually.
Consult Fig. 3, be the schematic diagram of the film absorption spectral region of prior art.As shown in Figure 3, in the prior art, the CIGS light-absorption layer mainly comprises two copper selenide galliums (CuGaSe2) and two copper indium diselenide (CuInSe2), wherein the absorption spectrum of CuGaSe2 mainly is the scope at wavelength 370nm～735nm, and has 4%～8% absorptance, and the absorption spectrum of CuInSe2 mainly drops on the scope of wavelength 550nm～1170nm, and has 6%～10% absorptance, but make comparisons with the curve of spectrum of sunlight, in the scope of wavelength 700nm～900nm, still have quite a high proportion of luminous energy not to be utilized.
In addition, in the prior art, the manufacture method of CIGS light-absorption layer typically uses vapour deposition method, sputtering method or electrochemical deposition method, needs a series of vacuum process, causes hardware investment and manufacturing cost all quite high.At antivacuum technology, (the International Solar Electric Technology of ISET company, Inc.) develop Mo Yinfa, be to prepare nano level metal powder or oxide powder earlier, after mixing, appropriate solvent makes slurry, with similar printing ink processing procedure (Ink Process) slurry is configured on the molybdenum layer again and forms the CIGS light-absorption layer, can significantly reduce manufacturing cost.
Yet, the shortcoming of prior art is, is subject to the essential extinction characteristic of CuGaSe2 and CuInSe2, and the luminous energy in wavelength 700nm～900nm scope is still had an appointment and 50% is not fully utilized, make whole extinction efficient further to improve, and influence the photoelectric conversion efficiency of CIGS solar cell.
Therefore, the light-absorption layer and the manufacture method that need a kind of more high-photoelectric transformation efficiency, utilize the Mo Yinfa of antivacuum mode, glue gel solution with proper composition, cooperate the heat treatment that is rapidly heated, form the light-absorption layer of high absorptance, use the absorptance of raising, and then solve the shortcoming of prior art the sunlight in wavelength 700nm～900nm scope.
Summary of the invention
The present invention is directed to the drawback of prior art, a kind of structure and manufacture method thereof of light-absorption layer of copper indium gallium selenium solar cell is provided.
The light-absorption layer of copper indium gallium selenium solar cell of the present invention, be after from bottom to top storehouse goes out molybdenum conductive layer and molybdenum copper aluminium ag alloy layer in regular turn on the glass substrate, on alloy-layer, form the cuprous sulfide layer, and on the cuprous sulfide layer, form a plurality of Copper Indium Gallium Selenide stack layers by copper, indium, gallium and selenium constituted, after heat treatment form the copper indium gallium sulphur selenium light-absorption layer, use for follow-up storehouse in regular turn to go out resilient coating and transparent electrode layer, use the copper indium gallium selenium solar cell that constitutes tool high-photoelectric transformation efficiency and high absorptance.
The manufacture method of the light-absorption layer of copper indium gallium selenium solar cell of the present invention, be to utilize sputtering method to form the cuprous sulfide layer, and utilization comprises copper, indium, the sol-gel solution of gallium and selenium, to soak, rotation, printing or spraying method also cooperate the predry baking processing, form a plurality of Copper Indium Gallium Selenide stack layers, then utilize the heat treatment that is rapidly heated, cuprous sulfide layer and copper-indium-gallium-selenium compound layer are merged and formation copper indium gallium sulphur selenium light-absorption layer, use for follow-up storehouse in regular turn to go out resilient coating and transparent electrode layer, use the copper indium gallium selenium solar cell that constitutes tool high-photoelectric transformation efficiency and high absorptance.
Therefore, by light-absorption layer provided by the present invention and manufacture method thereof, the more light-absorption layer of high-photoelectric transformation efficiency can be provided, in order to strengthen absorptance to the sunlight in wavelength 700nm～900nm scope, improve the whole absorptance and the photoelectric conversion efficiency of copper indium gallium selenium solar cell, thereby solve the shortcoming of above-mentioned prior art.
Description of drawings
Fig. 1 is the schematic diagram of the CIGS solar cell of prior art.
Fig. 2 is the schematic diagram of another CIGS solar cell of prior art.
Fig. 3 is the schematic diagram of the film absorption spectral region of prior art.
Fig. 4 is the structural representation of first embodiment of the invention.
Fig. 5 is for showing the manufacturing flow chart of first embodiment of the invention.
Fig. 6 is for showing the flow chart that forms the Copper Indium Gallium Selenide stack layer in the first embodiment of the invention.
Fig. 7 merges heat treated manufacturing flow chart for showing in the first embodiment of the invention.
Fig. 8 is for showing the heating curves figure of first embodiment of the invention.
Fig. 9 is for showing the structural representation of second embodiment of the invention.
Figure 10 is for showing the flow chart that forms the Copper Indium Gallium Selenide stack layer in the second embodiment of the invention.
Figure 11 is for showing the structural representation of third embodiment of the invention.
Figure 12 is for showing the flow chart that forms the Copper Indium Gallium Selenide stack layer in the third embodiment of the invention.
Figure 13 is for showing the schematic diagram of film absorption spectral region of the present invention.
Embodiment
Those skilled in the art below cooperate Figure of description that embodiments of the present invention are done more detailed description, so that can implement after studying this specification carefully according to this.
Consult Fig. 4, be the structural representation of first embodiment of the invention.As shown in Figure 4, CIGS solar cell 3 of the present invention is after depositing backplate layer 20 and molybdenum copper aluminium ag alloy layer 22 on the glass substrate 10 in regular turn, with cuprous sulfide layer 24, first mixed layer 41, second mixed layer 42 and the 3rd mixed layer 43 in regular turn storehouse on molybdenum copper aluminium ag alloy layer 22, and cuprous sulfide layer 24, first mixed layer 41, second mixed layer 42 and the 3rd mixed layer 43 after heat treatment form the copper indium gallium sulphur selenium light-absorption layer of high absorptance, at last resilient coating 80 and transparent electrode layer (not shown) are deposited on the 3rd mixed layer 43.
First mixed layer 41 comprises Berzeline and gallium selenide, and second mixed layer 42 comprises indium selenide and gallium selenide, and the 3rd mixed layer 43 comprises Berzeline and indium selenide.Therefore, first mixed layer 41, second mixed layer 42 and the 3rd mixed layer 43 form the Copper Indium Gallium Selenide stack layer.
Consult Fig. 5, be the manufacturing flow chart of first embodiment of the invention.As shown in Figure 5, manufacture method of the present invention is begun by step S100, after depositing backplate layer and molybdenum copper aluminium ag alloy layer on the glass substrate in regular turn, utilizes cuprous sulfide to carry out sputter as sputtered target material and handles, on molybdenum copper aluminium ag alloy layer, form the cuprous sulfide layer, enter step S200.In step S200, utilization comprises the sol gel solution of Copper Indium Gallium Selenide, on the cuprous sulfide layer, form a plurality of Copper Indium Gallium Selenide stack layers, enter step S300 again, utilize and merge heat treatment, the Copper Indium Gallium Selenide stack layer is spread and fusion, form the copper indium gallium sulphur selenium light-absorption layer of the high absorptance of tool.
Consult Fig. 6, for forming the flow chart of Copper Indium Gallium Selenide stack layer in the first embodiment of the invention.As shown in Figure 6, in step S210, utilization comprises first sol gel solution of Berzeline and gallium selenide, carry out film coated processing in modes such as immersion or rotation or printing or sprayings, and on the cuprous sulfide layer, form first sol gel layer, enter step S212, carry out the predry baking processing, 60 ℃～150 ℃ of baking temperatures, stoving time 10 minutes～20 minutes, form first to remove the solvent in first sol gel layer and mix stratification, wherein the first mixing stratification comprises Berzeline and gallium selenide, then enters step S214.
In step S214, utilization comprises second sol gel solution of indium selenide and gallium selenide, carry out film coated processing in modes such as immersion or rotation or printing or sprayings, and mix formation second sol gel layer on the stratification first, enter step S216, carry out the predry baking processing, 60 ℃～150 ℃ of baking temperatures, stoving time 10 minutes～20 minutes, form second to remove the solvent in second sol gel layer and mix stratification, wherein the second mixing stratification comprises indium selenide and gallium selenide, then enters step S218.
In step S218, utilization comprises the 3rd glue gel solution of Berzeline and indium selenide, carry out film coated processing in modes such as immersion or rotation or printing or sprayings, and mix formation the 3rd sol gel layer on the stratification second, enter step S219, carry out the predry baking processing, 60 ℃～150 ℃ of baking temperatures, stoving time 10 minutes～20 minutes, form the 3rd to remove the solvent in the 3rd sol gel layer and mix stratification, wherein the 3rd mixing stratification comprises Berzeline and indium selenide, thereby formation comprises that first mixes stratification, second mixes stratification and the 3rd mixes the Copper Indium Gallium Selenide stack layer of stratification.
Consult Fig. 7, for merging heat treated manufacturing flow chart in the first embodiment of the invention.As shown in Figure 7, in step S310, processing is rapidly heated, make the heating rate of temperature, in time t1, rise to fusion temperature Th by room temperature with 5 ℃～10 ℃/sec, about 400 ℃～800 ℃, shown in the T1 temperature curve of Fig. 8, then enter step S320.In step S320, in time t1 to t2, carry out the constant temperature baking under the fusion temperature Th, about 10 minutes～20 minutes, shown in the T2 temperature curve of Fig. 8, make cuprous sulfide layer, first mix stratification, the second mixing stratification and the 3rd mixing stratification and spread and fusion, enter step S330.In step S330, feed refrigerating gas and carry out quick cooling processing, make temperature between time t2 to t3, drop to 50 ℃～200 ℃, shown in the T3 temperature curve of Fig. 8, wherein temperature fall time is about 40 minutes～180 minutes, and refrigerating gas can use argon gas or nitrogen.Therefore, form the copper indium gallium sulphur selenium light-absorption layer of the high absorptance of tool.
Consult Fig. 9, be the structural representation of second embodiment of the invention.As shown in Figure 9, CIGS solar cell 4 of the present invention be with cuprous sulfide layer 24, Berzeline layer 51, indium selenide layer 52 and gallium selenide layer 53 in regular turn storehouse on molybdenum copper aluminium ag alloy layer 22, and cuprous sulfide layer 24, Berzeline layer 51, indium selenide layer 52 and gallium selenide layer 53 spread through heat treatment with fusion after, form the copper indium gallium sulphur selenium light-absorption layer of high absorptance, at last resilient coating 80 and transparent electrode layer (not shown) are deposited on the gallium selenide layer 53.
Consult Figure 10, for forming the flow chart of Copper Indium Gallium Selenide stack layer in the second embodiment of the invention.As shown in figure 10, in step S230, utilization utilizes the Berzeline sol gel solution, carries out film coated processing in modes such as immersion or rotation or printing or sprayings, and form the Berzeline sol gel layer on the cuprous sulfide layer, enter step S232, carry out the predry baking processing, 60 ℃～150 ℃ of baking temperatures, stoving time 10 minutes～20 minutes, form the Berzeline layer to remove the solvent in the Berzeline sol gel layer, then enter step S234.In step S234, utilization utilizes the indium selenide sol gel solution, carry out film coated processing in modes such as immersion or rotation or printing or sprayings, and on the Berzeline layer, form the indium selenide sol gel layer, and enter step S236, carry out the predry baking processing, 60 ℃～150 ℃ of baking temperatures, stoving time 10 minutes～20 minutes forms the indium selenide layer to remove the solvent in the indium selenide sol gel layer, enters step S238.In step S238, utilize the gallium selenide sol gel solution on the indium selenide layer, to form the gallium selenide sol gel layer, enter step S239, carry out the predry baking processing, 60 ℃～150 ℃ of baking temperatures, stoving time 10 minutes～20 minutes forms the gallium selenide layer to remove the solvent in the gallium selenide sol gel layer.Thereby formation comprises the Copper Indium Gallium Selenide stack layer of Berzeline layer, indium selenide layer and gallium selenide layer.
The Copper Indium Gallium Selenide stack layer of second embodiment of the invention is again through the fusion heat treatment as first embodiment, and the copper indium gallium sulphur selenium light-absorption layer of the high absorptance of formation tool.
Consult Figure 11, be the structural representation of third embodiment of the invention.As shown in figure 11, CIGS solar cell 5 of the present invention is that storehouse is on molybdenum copper aluminium ag alloy layer 22 in regular turn with cuprous sulfide layer 24 and Copper Indium Gallium Selenide mixed layer 61, and wherein Copper Indium Gallium Selenide mixed layer 61 comprises Berzeline, indium selenide and gallium selenide.Cuprous sulfide layer 24 and Copper Indium Gallium Selenide mixed layer 61 spread through heat treatment with fusion after, form the copper indium gallium sulphur selenium light-absorption layer of high absorptance, at last resilient coating 80 and transparent electrode layer (not shown) are deposited on the Copper Indium Gallium Selenide mixed layer 61.
Consult Figure 12, for forming the flow chart of Copper Indium Gallium Selenide stack layer in the third embodiment of the invention.As shown in figure 12, in step S250, utilize the Copper Indium Gallium Selenide sol gel solution on the cuprous sulfide layer, to form the Copper Indium Gallium Selenide sol gel layer, wherein the Copper Indium Gallium Selenide sol gel solution comprises Berzeline, the mixture of indium selenide and gallium selenide, to soak, rotation, modes such as printing or spraying are carried out film coated processing, and on the cuprous sulfide layer, form the Copper Indium Gallium Selenide sol gel layer, enter step S252, carry out the predry baking processing, 60 ℃～150 ℃ of baking temperatures, stoving time 10 minutes～20 minutes forms to remove the solvent in the Copper Indium Gallium Selenide sol gel layer and to comprise Berzeline, the Copper Indium Gallium Selenide mixed layer of indium selenide and gallium selenide.Thereby formation comprises the Copper Indium Gallium Selenide stack layer of Berzeline layer and Copper Indium Gallium Selenide mixed layer.
The Copper Indium Gallium Selenide stack layer of third embodiment of the invention is again through the fusion heat treatment as first embodiment, and the copper indium gallium sulphur selenium light-absorption layer of the high absorptance of formation tool.
Consult Figure 13, be the schematic diagram of film absorption spectral region of the present invention.As shown in figure 13, copper indium gallium sulphur selenium light-absorption layer of the present invention has curing copper indium (CuInS2), therefore can improve the absorptance to the sunlight in wavelength 700nm～900nm scope, uses the whole photoelectric conversion efficiency that promotes the CIGS solar cell.
The above only is in order to explain preferred embodiment of the present invention; be not that attempt is done any pro forma restriction to the present invention according to this; therefore, all have in that identical creation spirit is following do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (20)
1. the light-absorption layer of a copper indium gallium selenium solar cell, it is characterized in that, this light-absorption layer is positioned on a metal level or the resilient coating, this light-absorption layer comprises a sulfur-bearing resilient coating and a Copper Indium Gallium Selenide mixed layer, wherein this Copper Indium Gallium Selenide mixed layer comprises a plurality ofly by the compound that copper, indium, gallium and selenium constituted, and this sulfur-bearing resilient coating and this Copper Indium Gallium Selenide mixed layer merge heat treatment and form a copper indium gallium sulphur selenium light-absorption layer through one.
2. light-absorption layer as claimed in claim 1 is characterized in that, this metal level comprises a molybdenum layer, and this metal level is positioned on the substrate.
3. light-absorption layer as claimed in claim 1 is characterized in that, this resilient coating comprises a molybdenum copper aluminium ag alloy layer, be positioned on the molybdenum layer, and this metal level is positioned on the substrate.
4. light-absorption layer as claimed in claim 1 is characterized in that, this sulfur-bearing resilient coating comprises cuprous sulfide.
5. light-absorption layer as claimed in claim 1 is characterized in that described compound comprises Berzeline, indium selenide and gallium selenide.
6. the light-absorption layer of a copper indium gallium selenium solar cell, it is characterized in that, this light-absorption layer is positioned on a metal level or the resilient coating, this light-absorption layer comprises a sulfur-bearing resilient coating and a plurality of stack layer, wherein said stack layer comprises a plurality of by the compound that copper, indium, gallium and selenium constituted, and this sulfur-bearing resilient coating and described stack layer form a copper indium gallium sulphur selenium light-absorption layer through merging heat treatment.
7. light-absorption layer as claimed in claim 6 is characterized in that, this metal level comprises a molybdenum layer, and this metal level is positioned on the substrate.
8. light-absorption layer as claimed in claim 6 is characterized in that, this resilient coating comprises a molybdenum copper aluminium ag alloy layer, be positioned on the molybdenum layer, and this metal level is positioned on the substrate.
9. light-absorption layer as claimed in claim 6 is characterized in that, this sulfur-bearing resilient coating comprises cuprous sulfide.
10. light-absorption layer as claimed in claim 6 is characterized in that, described stack layer comprises a Berzeline layer, an indium selenide layer and a gallium selenide layer.
11. light-absorption layer as claimed in claim 6, it is characterized in that, described stack layer comprises one first mixed layer, one second mixed layer and one the 3rd mixed layer, this first mixed layer comprises Berzeline and gallium selenide, this second mixed layer comprises, indium selenide and gallium selenide, and the 3rd mixed layer comprises Berzeline and indium selenide.
12. the manufacture method of the light-absorption layer of a copper indium gallium selenium solar cell, it is characterized in that, this light-absorption layer is positioned on a metal level or the resilient coating, this metal level comprises a molybdenum layer, and this metal level is positioned on the substrate, this resilient coating comprises a molybdenum copper aluminium ag alloy layer, is positioned on this molybdenum layer, and this manufacture method may further comprise the steps:
Utilize cuprous sulfide to be used as a sputtered target material and handle, and on this metal level or resilient coating, form a cuprous sulfide layer to carry out sputter;
A plurality of sol gel solutions are formed a Copper Indium Gallium Selenide stack layer through a stack layer forming method and on this cuprous sulfide layer, and described sol gel solution comprises a solvent and a plurality of by compound that copper, indium, gallium and selenium constituted;
Utilize one to merge heat treatment, this cuprous sulfide layer and this Copper Indium Gallium Selenide stack layer are spread and fusion, form a copper indium gallium sulphur selenium light-absorption layer.
13. the manufacture method of light-absorption layer as claimed in claim 12, it is characterized in that, described sol gel solution comprises a Copper Indium Gallium Selenide glue gel solution, and this Copper Indium Gallium Selenide glue gel solution comprises Berzeline, indium selenide, gallium selenide and this solvent, and this stack layer forming method may further comprise the steps:
Utilize and soak, rotate, print or spraying, this Copper Indium Gallium Selenide sol gel solution is applied on this cuprous sulfide layer, form a Copper Indium Gallium Selenide sol gel layer; And
This Copper Indium Gallium Selenide sol gel layer is removed this solvent through a predry baking processing, forms this Copper Indium Gallium Selenide stack layer that comprises Berzeline, indium selenide and gallium selenide.
14. the manufacture method of light-absorption layer as claimed in claim 13 is characterized in that, this predry baking processing comprises a baking temperature and a stoving time, and this baking temperature is 60 ℃～150 ℃, and this stoving time is 10 minutes～20 minutes.
15. the manufacture method of light-absorption layer as claimed in claim 12, it is characterized in that, described sol gel solution comprises a Berzeline sol gel solution, an indium selenide sol gel solution and a gallium selenide sol gel solution, this Berzeline sol gel solution comprises Berzeline and this solvent, this indium selenide sol gel solution comprises indium selenide and this solvent, this gallium selenide sol gel solution comprises gallium selenide and this solvent, and this stack layer forming method may further comprise the steps:
Utilize and soak, rotate, print or spraying, this Berzeline selenium sol gel solution is applied on this cuprous sulfide layer, form a Berzeline sol gel layer;
This Berzeline sol gel layer to remove this solvent, forms a Berzeline layer through a predry baking processing;
Utilize and soak, rotate, print or spraying, this indium selenide selenium sol gel solution is applied on this Berzeline layer, form an indium selenide sol gel layer;
This indium selenide sol gel layer to remove this solvent, forms an indium selenide layer through this predry baking processing;
Utilize and soak, rotate, print or spraying, this gallium selenide selenium sol gel solution is applied on this indium selenide layer, form a gallium selenide sol gel layer; And
This gallium selenide sol gel layer to remove this solvent, forms a gallium selenide layer through this predry baking processing;
Formation comprises this Copper Indium Gallium Selenide stack layer of this Berzeline layer, indium selenide layer and gallium selenide layer.
16. the manufacture method of light-absorption layer as claimed in claim 15 is characterized in that, this predry baking processing comprises a baking temperature and a stoving time, and this baking temperature is 60 ℃～150 ℃, and this stoving time is 10 minutes～20 minutes.
17. the manufacture method of light-absorption layer as claimed in claim 12, it is characterized in that, described sol gel solution comprises one first sol gel solution, one second sol gel solution and one the 3rd sol gel solution, this first sol gel solution comprises Berzeline, gallium selenide and this solvent,, Berzeline and this solvent, this second sol gel solution comprises indium selenide, gallium selenide and this solvent, the 3rd sol gel solution comprises Berzeline, indium selenide and this solvent, and this stack layer forming method may further comprise the steps:
Utilize and soak, rotate, print or spraying, this first sol gel solution is applied on this cuprous sulfide layer, form one first sol gel layer;
This first sol gel layer to remove this solvent, forms one first mixed layer through a predry baking processing;
Utilize and soak, rotate, print or spraying, this second sol gel solution is applied on this first mixed layer, form one second sol gel layer;
This second sol gel layer to remove this solvent, forms one second mixed layer through this predry baking processing;
Utilize and soak, rotate, print or spraying, the 3rd sol gel solution is applied on this second mixed layer, form one the 3rd sol gel layer;
The 3rd sol gel layer to remove this solvent, forms one the 3rd mixed layer through this predry baking processing; And
Formation comprises this Copper Indium Gallium Selenide stack layer of this first mixed layer, second mixed layer and the 3rd mixed layer.
18. the manufacture method of light-absorption layer as claimed in claim 17 is characterized in that, this predry baking processing comprises a baking temperature and a stoving time, and this baking temperature is 60 ℃～150 ℃, and this stoving time is 10 minutes～20 minutes.
19. the manufacture method of light-absorption layer as claimed in claim 12 is characterized in that, this fusion heat treatment may further comprise the steps:
One processing that is rapidly heated rises to a fusion temperature with the speed that is rapidly heated with temperature, and this speed that is rapidly heated is 5 ℃～10 ℃/sec, and this fusion temperature is 400 ℃～800 ℃;
One constant temperature fusion treatment under this fusion temperature, is kept a time of fusion, and this time of fusion is 10 minutes～20 minutes; And
One quick cooling processing feeds a refrigerating gas, makes this temperature drop to a cooling target temperature in a cooling time, and be 40 minutes～180 minutes this cooling time, and this cooling target temperature is 50 ℃～200 ℃;
20. the manufacture method of light-absorption layer as claimed in claim 19 is characterized in that, this refrigerating gas comprises argon gas or nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102239552A CN102074592A (en) | 2009-11-20 | 2009-11-20 | Light absorption layer of copper indium gallium selenide (CIGS) solar cell and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102239552A CN102074592A (en) | 2009-11-20 | 2009-11-20 | Light absorption layer of copper indium gallium selenide (CIGS) solar cell and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102074592A true CN102074592A (en) | 2011-05-25 |
Family
ID=44033045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102239552A Pending CN102074592A (en) | 2009-11-20 | 2009-11-20 | Light absorption layer of copper indium gallium selenide (CIGS) solar cell and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102074592A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779433A (en) * | 2012-10-22 | 2014-05-07 | 中物院成都科学技术发展中心 | CIGS thin film prefabricated layer and fabrication method thereof |
| CN103779439A (en) * | 2012-10-22 | 2014-05-07 | 中物院成都科学技术发展中心 | CIGS thin film prefabricated layer and fabrication method thereof |
| CN104094412A (en) * | 2012-02-02 | 2014-10-08 | 韩国能源技术研究院 | Method for manufacturing photovoltaic ci(g)s-based thin film using flux having low melting point, and ci(g)s-based thin film manufactured by same |
| CN104380478A (en) * | 2012-07-31 | 2015-02-25 | Lg伊诺特有限公司 | Solar cell apparatus and method of fabricating the same |
| CN104916734A (en) * | 2014-03-11 | 2015-09-16 | 台积太阳能股份有限公司 | Method of CIGS absorber formation |
| CN107086321A (en) * | 2017-05-25 | 2017-08-22 | 莆田学院 | A kind of lithium battery |
| CN108807572A (en) * | 2018-06-05 | 2018-11-13 | 中山米来机器人科技有限公司 | A kind of silver indium gallium selenium film and its preparation method and application |
| CN112186066A (en) * | 2019-07-01 | 2021-01-05 | 北京铂阳顶荣光伏科技有限公司 | Preparation method of silver-doped copper indium gallium selenide solar cell |
-
2009
- 2009-11-20 CN CN2009102239552A patent/CN102074592A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104094412A (en) * | 2012-02-02 | 2014-10-08 | 韩国能源技术研究院 | Method for manufacturing photovoltaic ci(g)s-based thin film using flux having low melting point, and ci(g)s-based thin film manufactured by same |
| CN104380478B (en) * | 2012-07-31 | 2017-12-26 | Lg 伊诺特有限公司 | Solar cell device and the method for manufacturing solar cell device |
| CN104380478A (en) * | 2012-07-31 | 2015-02-25 | Lg伊诺特有限公司 | Solar cell apparatus and method of fabricating the same |
| CN103779439A (en) * | 2012-10-22 | 2014-05-07 | 中物院成都科学技术发展中心 | CIGS thin film prefabricated layer and fabrication method thereof |
| CN103779433B (en) * | 2012-10-22 | 2016-09-21 | 中物院成都科学技术发展中心 | A kind of CIGS thin-film preformed layer and preparation method thereof |
| CN103779439B (en) * | 2012-10-22 | 2016-09-21 | 中物院成都科学技术发展中心 | A kind of CIGS thin-film preformed layer and preparation method thereof |
| CN103779433A (en) * | 2012-10-22 | 2014-05-07 | 中物院成都科学技术发展中心 | CIGS thin film prefabricated layer and fabrication method thereof |
| CN104916734A (en) * | 2014-03-11 | 2015-09-16 | 台积太阳能股份有限公司 | Method of CIGS absorber formation |
| US9685569B2 (en) | 2014-03-11 | 2017-06-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of CIGS absorber formation |
| CN107086321A (en) * | 2017-05-25 | 2017-08-22 | 莆田学院 | A kind of lithium battery |
| CN108807572A (en) * | 2018-06-05 | 2018-11-13 | 中山米来机器人科技有限公司 | A kind of silver indium gallium selenium film and its preparation method and application |
| CN108807572B (en) * | 2018-06-05 | 2020-01-17 | 电子科技大学中山学院 | Silver indium gallium selenide thin film and preparation method and application thereof |
| CN112186066A (en) * | 2019-07-01 | 2021-01-05 | 北京铂阳顶荣光伏科技有限公司 | Preparation method of silver-doped copper indium gallium selenide solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sun et al. | Semi-transparent solar cells | |
| CN106558650B (en) | A kind of preparation method of flexible copper indium gallium selenide/perovskite lamination solar cell | |
| JP5185171B2 (en) | Method for forming light absorption layer of thin film solar cell | |
| US20100243043A1 (en) | Light Absorbing Layer Of CIGS Solar Cell And Method For Fabricating The Same | |
| CN102074592A (en) | Light absorption layer of copper indium gallium selenide (CIGS) solar cell and manufacturing method thereof | |
| JP2013507766A (en) | Photovoltaic power generation apparatus and manufacturing method thereof | |
| CN102074590A (en) | Back contact electrode in cadmium telluride membrane solar cell structure and preparation method thereof | |
| US20140109963A1 (en) | Single junction type cigs thin film solar cell and method for manufacturing the thin film solar cell | |
| WO2021047673A1 (en) | Cadmium telluride solar cell and preparation method thereof | |
| CN108447936A (en) | A kind of antimony base binode stacked solar cell, cascade solar cell and preparation method thereof | |
| Waleed et al. | Performance improvement of solution-processed CdS/CdTe solar cells with a thin compact TiO 2 buffer layer | |
| Han et al. | Efficient Sb2 (S, Se) 3 solar modules enabled by hydrothermal deposition | |
| Xie et al. | Thin‐Film Solar Cells using a Selenized Silver Antimony Sulfide Absorber Prepared by Spray Pyrolysis Deposition | |
| JP2014503125A (en) | Solar cell and manufacturing method thereof | |
| KR101154696B1 (en) | Solar cell apparatus and method of fabricating the same | |
| CN103474514B (en) | The preparation method of copper indium gallium selenium solar cell | |
| KR101262529B1 (en) | Solar cell and method of fabricating the same | |
| TWI430466B (en) | Device structure for high efficiency cdte thin-film solar cell | |
| TW201023376A (en) | Light absorption layer of CIGS solar cell and manufacturing method thereof | |
| WO2012070481A1 (en) | Photoelectric conversion device | |
| CN102646746A (en) | Cadmium zinc telluride/copper indium gallium selenide laminated solar battery | |
| CN102074614A (en) | Method for preparing sol-gel solution of copper-indium-gallium-selenium solar battery | |
| JP2010098263A (en) | Photovoltaic element and method of manufacturing the same | |
| TWI542029B (en) | A method for fabricating solar cell | |
| JP2012195553A (en) | Method for manufacturing semiconductor layer and method for manufacturing photoelectric conversion device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110525 |