CN104105254A - Double-half-bridge injection phase-locking light-emitting diode LED array lamp - Google Patents
Double-half-bridge injection phase-locking light-emitting diode LED array lamp Download PDFInfo
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- CN104105254A CN104105254A CN201310156033.0A CN201310156033A CN104105254A CN 104105254 A CN104105254 A CN 104105254A CN 201310156033 A CN201310156033 A CN 201310156033A CN 104105254 A CN104105254 A CN 104105254A
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- 238000002347 injection Methods 0.000 title claims abstract description 14
- 239000007924 injection Substances 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 27
- 239000003990 capacitor Substances 0.000 claims abstract description 20
- 230000010355 oscillation Effects 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 8
- 230000002159 abnormal effect Effects 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 5
- 238000005070 sampling Methods 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- 238000005286 illumination Methods 0.000 abstract description 6
- 230000001360 synchronised effect Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The invention relates to the technical field of electric light source illumination and specifically discloses a double-half-bridge injection phase-locking light-emitting diode LED array lamp. The light-emitting diode LED array lamp comprises a power supply filter EMI, bridge rectifiers, a power factor correction APFC, a light-emitting diode LED array lamp, a reference crystal oscillator, a frequency divider, two self-oscillation chips 4 and 6, a half-bridge inverter A, a half-bridge inverter B, an addition coupler and a full-wave rectifier. RC oscillators of the two self oscillation chips 4 and 6 are connected with a resistor R11 and a capacitor C15 for synchronous oscillation. The self-oscillation chip 4 and a half-bridge inverter A output power transformer T2 and the self-oscillation chip 6 and a half-bridge inverter B output power transformer T3 are fed into the addition coupler in a reverse-phase manner. The synthesized power drives the light-emitting diode LED array lamp through the full-wave rectifier. Signals of the reference crystal oscillator are injected into RC oscillators of the two self-oscillation chips 4, 6 through the frequency divider for phase locking, so that large-power illumination is achieved, and luminance declination caused by power unbalance resulted from oscillation frequency change since temperature rise of a device is too high is avoided. The light-emitting diode LED array lamp is suitable for large-power light-emitting diode LED array lamp illumination occasions.
Description
Technical field
The present invention relates to electric source lighting technical field, specifically a kind of two half-bridge injection phase-locking LED array lamp.
Background technology
LC or RC oscillator drives LED array lamp for prior art electronic transformer, the frequency of oscillation producing is subject to temperature change stability, and poor to affect power stable not, causes light intensity to decline, although hand over the electronic transformer of orthogonal AC-DC-AC inversion, features simple structure, cost is low.Obtain high-power illumination and certainly will increase device current, the too high frequency of oscillation that causes of hunting power pipe power consumption sharp increase temperature rise changes, and result can make light unbalance with frequency change power magnitude.Meanwhile, large electric current declines by the high magnetic permeability of coil temperature rise, the little impedance trend zero of saturation inductors quantitative change, light fixture operating time and temperature rise direct ratio, device aging is accelerated in temperature rise, and gently the unstable brightness of lamp luminescence declines, heavy burn out device reduction of service life.
Summary of the invention
The object of this invention is to provide the inversion high frequency stabilization Phase synchronization of vibrating, two half-bridge injection phase-locking LED array lamps of high-power illumination.
The technology of the present invention solution is: comprise power-supply filter EMI, rectifier bridge stack, power factor correction APFC, LED array lamp, benchmark crystal oscillator, frequency divider, two self-oscillation chips, half-bridge inverter A, half-bridge inverter B, be added coupler, full-wave rectifier, abnormal condition of lamp tube current detector, wherein, benchmark crystal oscillator is by quartz-crystal resonator, two inverters and resistance, electric capacity composition, first inverter input and output two ends cross-over connection biasing resistor, and respectively and connect ground capacity, simultaneously, the also quartz-crystal resonator of cross-over connection series connection trimmer, benchmark crystal oscillator output signal is through second inverter access frequency divider, self-oscillation chip includes RC oscillator, semi-bridge inversion drive circuit, two self-oscillation chip RC oscillator connecting resistance R altogether
11, capacitor C
15synchronized oscillation, output connects by Q through semi-bridge inversion drive circuit respectively
2, Q
3half-bridge inverter A, the half-bridge inverter B of two complementary compositions of high-power MOS field effect transistor, self-oscillation chip and half-bridge inverter A output power transformer T
2with self-oscillation chip and half-bridge inverter B output power transformer T
3anti-phase feed-in is added coupler, and power is synthetic to be fed to full-wave rectifier and to light LED array lamp, and benchmark crystal oscillator signal injects two self-oscillation chip RC oscillator C through frequency divider
tend locking phase, abnormal condition of lamp tube current detector signal is through two self-oscillation chip RC oscillator C of triode access
thold quick failure of oscillation, electric network source is through the power end of power-supply filter EMI, rectifier bridge stack, power factor correction APFC output voltage access benchmark crystal oscillator, frequency divider, self-oscillation chip and half-bridge inverter A, self-oscillation chip and half-bridge inverter B,
Wherein, full-wave rectifying circuit is by two high-power MOS field effect transistor Q
4, Q
5source electrode connects and is added coupler T
4inductance L
11two ends, grid connecting resistance bias pressure, source electrode, the rectifier diode in parallel that drains, Q
4, Q
5drain and connect as recommending full-wave rectification output, inductance L
11mid point detects mutual inductance magnet ring ground connection, inductance L through lamp current
12meet diode VD
17detection, capacitor C
20, resistance R
22filtering meets two self-oscillation chip RC oscillator C
tend;
Power factor correction APFC is by chip IC
4, MOS field effect tube Q
1, booster diode VD
11, magnetic transformer T
1and resistance, electric capacity composition, rectifier bridge stack is exported through magnetic transformer T
1inductance L
3meet Q
1drain electrode, booster diode VD
11to capacitor C
11as power factor correction APFC output, resistance R
4connect rectifier bridge stack output and introduce chip IC
4power end, and with magnetic transformer T
1inductance L
4through diode VD
5detecting circuit is chip IC
4control thresholding is opened, resistance R
2, R
3meet rectifier bridge stack output dividing potential drop sampling access chip IC
4multiplier one end, multiplier other end connecting resistance R
8, R
9dividing potential drop sampling output voltage, multiplier output and Q
1source ground point of resistance connects peak value current sense comparator, chip IC
4output meets Q
1grid, magnetic transformer T
1inductance L
5high frequency voltage is by diode VD
6～9rectification, diode VD
10voltage stabilizing, capacitor C
12filtering connects benchmark crystal oscillator, frequency divider power end.
The present invention produces good effect: it is synthetic to solve the vibrate high frequency stabilization, Phase synchronization power of two semi-bridge inversions, reach the large-power light-emitting diodes LED array lamp illumination that single self-oscillation half-bridge inverter is difficult to obtain, avoid device temperature rise frequency of oscillation to change power imbalances, steady light increases the service life.
Brief description of the drawings
Fig. 1 technical solution of the present invention theory diagram
Fig. 2 benchmark crystal oscillating circuit
The two half-bridge injection phase-locking LED array lamp circuit of Fig. 3
Embodiment
With reference to Fig. 1,2,3 (Fig. 3 taking self-oscillation chip and half-bridge inverter A circuit as example, self-oscillation chip and half-bridge inverter B identical), the specific embodiment of the invention and embodiment: power-supply filter EMI and rectifier bridge stack 11, power factor correction APFC1, LED array fluorescent tube 10, benchmark crystal oscillator 2, frequency divider 3, two self-oscillation chips 4,6, half-bridge inverter A5, half-bridge inverter B7, addition coupler 8, full-wave rectifier 9, abnormal condition of lamp tube current detector 12, wherein, benchmark crystal oscillator 2 is by quartz-crystal resonator JT, two inverter ics
1, IC
2and resistance R
1, capacitor C
0, C
1, C
2composition, first inverter ic
1input and output two ends cross-over connection biasing resistor R
1, and respectively and meet ground capacity C
1, C
2, meanwhile, also cross-over connection series connection trimming capacitor C
0quartz-crystal resonator JT, benchmark crystal oscillator 2 output signals are through second inverter ic
2access frequency divider IC
3, self-oscillation chip IC
5iR2153 includes RC oscillator, semi-bridge inversion drive circuit, and the RC oscillator of two self-oscillation chips 4,6 is connecting resistance R altogether
11, capacitor C
15synchronized oscillation, output connects by two MOS field effect tube Q through semi-bridge inversion drive circuit respectively
2, Q
3half-bridge inverter A5, the half-bridge inverter B7 of complementary composition, self-oscillation chip 4 and half-bridge inverter A5 output power transformer T
2with self-oscillation chip 6 and half-bridge inverter B7 output power transformer T
3anti-phase feed-in is added coupler 8, and power is synthetic accesses LED array lamp 10 through full-wave rectifier 9, and benchmark crystal oscillator 2 is through frequency divider 3 frequency division ÷ N reference signal f
0capacitor C
4, C
5dividing potential drop is injected the RC oscillator C of two self-oscillation chips 4,6
tend locking phase, abnormal condition of lamp tube current detector 12 signals are through triode VT
1access the RC oscillator C of two self-oscillation chips 4,6
tend is controlled the quick failure of oscillation of vibration, electric network source accesses benchmark crystal oscillator 2, frequency divider 3 through power-supply filter EMI and rectifier bridge stack 11, power factor correction APFC1 output voltage+15V, the power end of+400V access self-oscillation chip 4 and half-bridge inverter A5, self-oscillation chip 6 and half-bridge inverter B7.
IC
4pin mark function: V
cCchip logic control low-tension supply, IDET zero current detection, the input of MULT multiplier, the input of INV error amplifier, the output of EA error amplifier, CS pulse width modulated comparator, the output of OUT driver, GND ground connection.IC
5pin mark function: V
cCchip low tension source, V
bthe driver power supply of floating, HO drives Q
2grid, LO drives Q
3grid, V
sthe power supply of floating returns, R
tconnect vibration timing resistor, C
tconnect vibration timing capacitor, OCM power signal ground connection.
Self-oscillation chip IC
5by resistance R
10, capacitor C
13step-down is supplied with to start and is produced vibration, drives half-bridge power metal-oxide-semiconductor Q
2, Q
3, making it conduction and cut-off in turn, now inverter mid point output square-wave voltage is through resistance R
14, capacitor C
17, diode VD
12, VD
13rectification is to capacitor C
13charging, for self-oscillation chip IC
5power supply, resistance R after conversion
10stop power supply, reduce power consumption.Diode VD
14to capacitor C
16bootstrapping charging, floats and reduces power consumption for electric drive half-bridge inverter.Two inverter powers are synthetic drags large-power lamp, and dilatation is reliable, but two self-oscillation chip oscillate voltage-phases should be consistent, unbalanced to eliminate non-linear intermodulation power, obtains stable power output.For this reason, introduce injection phase-locking and solve power synthesis phase simultaneous techniques.
Benchmark crystal oscillator quartz resonator frequency is subject to variations in temperature minimum, highly stable.Reference signal is injected self-oscillation chip RC oscillator locking phase place through frequency divider.Do not inject reference signal RC oscillator and produce free oscillation frequency, inject reference signal RC oscillating voltage and its vector synthetic, by self-oscillation chip additive mixing locking phase, oscillator signal and injection reference signal only have a fixing phase difference.Synchronization bandwidth and injecting power direct ratio, with RC oscillator loaded Q inverse ratio, due to the input of reference signal injection RC oscillator, gain high, and small-power is lockable, and two self-oscillation chips meet timing resistor R altogether
11, capacitor C
15synchronized oscillation is fast locking time.Reference signal frequency division injects the high wen-frequency characteristics resonator of apolegamy upper frequency, locks tens of to hundreds of kilo hertzs of LC or RC oscillator.Frequency divider IC
3binary system or decade counter frequency division.
Injection phase-locking is need not be voltage-controlled tuning, phase demodulation, loop filtering, the simple superior performance of circuit, and fringe cost is low.Injection phase-locking there is not difference with looped phase locking in essence, is applicable to the synthetic light fixture stable oscillation stationary vibration frequency plot of power synchronous, avoids the too high power imbalances of device temperature rise, and steady light increases the service life.
Be added coupler T
4inductance L
10by two half-bridge output power transformer T
2, T
3inductance L
7, L
9anti-phase exciting current stack, 180 ° of low-order harmonics of phase difference are cancelled out each other, and output current conversion doubles summation and delivers to lamp load, and two electric currents equate balance resistance R
17no power waste.
Two high-power MOS field effect transistor Q of full-wave rectifying circuit
4, Q
5parallel diode VD
15, VD
16reduce dead resistance and reduce the wastage, rectification efficiency is high, and output ripple is low, stable luminescence.
Lamp abnormality detection is by lamp current mutual inductance magnet ring inductance L
12induced potential diode VD
17detection, capacitor C
20, resistance R
22filtering, through resistance R
15, R
16current limliting, triode VT
1trigger two self-oscillation chip RC oscillator C
tend, the comparator voltage of chip internal is reduced to V
cCbelow/6, failure of oscillation turn-offs inverter power pipe fast rapidly, avoids damaging.
Electric ballast incoming transport power supply is resistance load, and input voltage and electric current have larger phase difference, and power factor is low, by integrated chip IC
4l6562, power MOS pipe Q
1improve power factor Deng composition, reduce electric current total harmonic distortion, output voltage is constant, ensures that oscillation amplitude steady light is constant.The power line filter suppressing humorous wave interference of vibrating is transmitted by electrical network.
Embodiment alternating current AC90～250V, power factor correction APFC exports DC400V, power factor 0.98, two semi-bridge inversion electric current 0.58A, light 200W LED array lamp, efficiency 86%.
Claims (3)
1. a two half-bridge injection phase-locking LED array lamp, comprise power-supply filter EMI, rectifier bridge stack, LED array lamp, it is characterized in that: also comprise power factor correction APFC, benchmark crystal oscillator, frequency divider, two self-oscillation chips, half-bridge inverter A, half-bridge inverter B, be added coupler, full-wave rectifier, abnormal condition of lamp tube current detector, wherein, benchmark crystal oscillator is by quartz-crystal resonator, two inverters and resistance, electric capacity composition, first inverter input and output two ends cross-over connection biasing resistor, and respectively and connect ground capacity, simultaneously, the also quartz-crystal resonator of cross-over connection series connection trimmer, benchmark crystal oscillator output signal is through second inverter access frequency divider, self-oscillation chip includes RC oscillator, semi-bridge inversion drive circuit, two self-oscillation chip RC oscillator connecting resistance R altogether
11, capacitor C
15synchronized oscillation, output connects half-bridge inverter A, the half-bridge inverter B by the complementary composition of two MOS field effect tubes, self-oscillation chip and half-bridge inverter A output power transformer T through semi-bridge inversion drive circuit respectively
2with self-oscillation chip and half-bridge inverter B output power transformer T
3anti-phase feed-in is added coupler, and power is synthetic to be fed to full-wave rectifier and to light LED array lamp, and benchmark crystal oscillator signal injects two self-oscillation chip RC oscillator C through frequency divider
tend locking phase, abnormal condition of lamp tube current detector signal is through two self-oscillation chip RC oscillator C of triode access
thold quick failure of oscillation, electric network source accesses respectively the power end of benchmark crystal oscillator, frequency divider, self-oscillation chip and half-bridge inverter A, self-oscillation chip and half-bridge inverter B through power-supply filter EMI, rectifier bridge stack, power factor correction APFC output voltage.
2. according to claim 1 pair of half-bridge injection phase-locking LED array lamp, is characterized in that: full-wave rectifying circuit is by two high-power MOS field effect transistor Q
4, Q
5source electrode connects and is added coupler T
4inductance L
11two ends, grid connects divider resistance biasing, and source electrode, the rectifier diode in parallel that drains, drain and connect as recommending full-wave rectification output, inductance L
11mid point detects mutual inductance magnet ring ground connection, inductance L through lamp current
12meet diode VD
17detection, capacitor C
20, resistance R
22filtering meets two self-oscillation chip RC oscillator C through resistance
tend.
3. according to claim 1 pair of half-bridge injection phase-locking LED array lamp, is characterized in that: power factor correction APFC is by chip IC
4, MOS field effect tube Q
1, booster diode VD
11, magnetic transformer T
1and resistance, electric capacity composition, rectifier bridge stack is exported through magnetic transformer T
1inductance L
3meet Q
1drain electrode, booster diode VD
11to capacitor C
11as power factor correction APFC output, resistance R
4connect rectifier bridge stack output and introduce chip IC
4power end, and with magnetic transformer T
1inductance L
4through diode VD
5detecting circuit is chip IC
4control thresholding is opened, resistance R
2, R
3meet rectifier bridge stack output dividing potential drop sampling access chip IC
4multiplier one end, multiplier other end connecting resistance R
8, R
9dividing potential drop sampling output voltage, multiplier output and Q
1source ground point of resistance connects peak value current sense comparator, chip IC
4output meets Q
1grid, magnetic transformer T
1inductance L
5high frequency voltage is by diode VD
6～9rectification, diode VD
10voltage stabilizing, capacitor C
12filtering connects benchmark crystal oscillator, frequency divider power end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310156033.0A CN104105254B (en) | 2013-04-15 | Double half-bridge injection phase-locking LED array lamps |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310156033.0A CN104105254B (en) | 2013-04-15 | Double half-bridge injection phase-locking LED array lamps |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104105254A true CN104105254A (en) | 2014-10-15 |
| CN104105254B CN104105254B (en) | 2016-11-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114299737A (en) * | 2021-12-03 | 2022-04-08 | 江苏航天大为科技股份有限公司 | Synchronous timing signal generating device for internet signal lamp |
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|---|---|---|---|---|
| US20030146714A1 (en) * | 2001-12-19 | 2003-08-07 | Nicholas Buonocunto | Electronic ballast system having emergency lighting provisions |
| CN101141842A (en) * | 2006-09-08 | 2008-03-12 | 北方工业大学 | Electronic ballast |
| CN101227785A (en) * | 2007-01-18 | 2008-07-23 | 史俊生 | Timing dimming circuit of high voltage sodium lamp electronic ballast and operating method thereof |
| CN202424563U (en) * | 2012-02-24 | 2012-09-05 | 刘国华 | High-frequency-pulse oil smoke purifier power source |
| CN203181318U (en) * | 2013-04-15 | 2013-09-04 | 阮雪芬 | Double-half-bridge injection-locking light emitting diode LED array lamp |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030146714A1 (en) * | 2001-12-19 | 2003-08-07 | Nicholas Buonocunto | Electronic ballast system having emergency lighting provisions |
| CN101141842A (en) * | 2006-09-08 | 2008-03-12 | 北方工业大学 | Electronic ballast |
| CN101227785A (en) * | 2007-01-18 | 2008-07-23 | 史俊生 | Timing dimming circuit of high voltage sodium lamp electronic ballast and operating method thereof |
| CN202424563U (en) * | 2012-02-24 | 2012-09-05 | 刘国华 | High-frequency-pulse oil smoke purifier power source |
| CN203181318U (en) * | 2013-04-15 | 2013-09-04 | 阮雪芬 | Double-half-bridge injection-locking light emitting diode LED array lamp |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114299737A (en) * | 2021-12-03 | 2022-04-08 | 江苏航天大为科技股份有限公司 | Synchronous timing signal generating device for internet signal lamp |
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Effective date of registration: 20191211 Address after: 314300 No.37 Yanqi Road, Wuyuan street, Haiyan County, Jiaxing City, Zhejiang Province Patentee after: JIAXING HONGLIANG OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 321100 No. 35, Taohuawu, Lanxi, Zhejiang, China Patentee before: Ruan Xuefen |
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 314300 No.37 Yanqi Road, Wuyuan street, Haiyan County, Jiaxing City, Zhejiang Province Patentee after: Jiaxing Hongliang Photoelectric Technology Co.,Ltd. Address before: 314300 No.37 Yanqi Road, Wuyuan street, Haiyan County, Jiaxing City, Zhejiang Province Patentee before: JIAXING HONGLIANG OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161130 |