CN104105297B - Dual-half-bridge injection phase-locking power synthesis Non-polarized lamp - Google Patents
Dual-half-bridge injection phase-locking power synthesis Non-polarized lamp Download PDFInfo
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- CN104105297B CN104105297B CN201310156032.6A CN201310156032A CN104105297B CN 104105297 B CN104105297 B CN 104105297B CN 201310156032 A CN201310156032 A CN 201310156032A CN 104105297 B CN104105297 B CN 104105297B
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Abstract
The present invention relates to electric source lighting technical field, specifically a kind of dual-half-bridge injection phase-locking power synthesis Non-polarized lamp.Including power-supply filter EMI, rectifier bridge stack, PFC APFC, electrodeless lamp tube, benchmark crystal oscillator, frequency divider, two self-oscillation chips 4,6, half-bridge inverter A, half-bridge inverter B, be added bonder, the RC agitator of two self-oscillation chips 4,6 connecting resistance R altogether4, electric capacity C5Synchronized oscillation, self-oscillation chip 4 and half-bridge inverter A output power transformer T1With self-oscillation chip 6 and half-bridge inverter B output power transformer T2Anti-phase feed-in is added bonder, power combing is inductively coupled to tube starting through magnet ring, the divided device of benchmark crystal oscillation signal injects the RC oscillator locking phase place of two self-oscillation chips 4,6, obtains high-power illumination and avoids device temperature rise to cross high oscillation frequency change power imbalances light decline.The present invention is applicable to high-power electrodeless lamp illumination occasion.
Description
Technical field
The present invention relates to electric source lighting technical field, specifically a kind of dual-half-bridge injection phase-locking power synthesis Non-polarized lamp.
Background technology
Prior art electric ballast general LC or RC agitator is as Non-polarized lamp electric light source, and the frequency of oscillation of generation is affected power by temperature change stability difference and is not sufficiently stable, and causes light intensity to decline, although this electric ballast, features simple structure, low cost.High-power illumination to be obtained certainly will increase device current, and hunting power pipe power consumption sharp increase temperature rise is too high causes frequency of oscillation to change, and result can make light unbalance with frequency change power magnitude.Meanwhile, big electric current by coil temperature rise high magnetic permeability decline, saturation inductors amount diminish impedance tend to zero, light fixture working time and temperature rise direct ratio, device aging is accelerated in temperature rise, the most then the brightness of lamp luminescence instability declines, heavy then burn out device reduction of service life.
Summary of the invention
It is an object of the invention to provide the inversion high frequency stabilization Phase synchronization of vibration, a kind of dual-half-bridge injection phase-locking power synthesis Non-polarized lamp of high-power illumination.
The technology of the present invention solution is: include power-supply filter EMI, rectifier bridge stack, PFC APFC, electrodeless lamp tube, benchmark crystal oscillator, frequency divider, two self-oscillation chips, half-bridge inverter A, half-bridge inverter B, it is added bonder, abnormal condition of lamp tube amperometric, wherein, benchmark crystal oscillator is by quartz-crystal resonator, two phase inverters and resistance, electric capacity forms, first phase inverter input and output two ends bridging biasing resistor, and respectively and connect ground capacity, simultaneously, the also quartz-crystal resonator of bridging series connection trimmer, benchmark crystal oscillator output signal accesses frequency divider through second phase inverter, self-oscillation chip includes RC agitator, semi-bridge inversion drive circuit, two self-oscillation chip RC agitator connecting resistance R altogether11, electric capacity C15Synchronized oscillation, output connects half-bridge inverter A, the half-bridge inverter B by two MOS field effect tube complementation compositions, self-oscillation chip and half-bridge inverter A output power transformer T through semi-bridge inversion drive circuit respectively2With self-oscillation chip and half-bridge inverter B output power transformer T3Anti-phase feed-in is added bonder, and power combing is through magnet ring inductance L13、L14Being coupled to electrodeless lamp tube starter, the divided device of benchmark crystal oscillation signal injects two self-oscillation chip RC agitator CTEnd locking phase, abnormal condition of lamp tube current detector signal accesses two self-oscillation chip RC agitator C through audionTEnd controls the quick failure of oscillation that vibrates, and electric network source accesses benchmark crystal oscillator, frequency divider, self-oscillation chip and half-bridge inverter A, self-oscillation chip and the power end of half-bridge inverter B through power-supply filter EMI, rectifier bridge stack, PFC APFC output voltage；
Wherein, PFC APFC is by chip IC4, MOS field effect tube Q1, booster diode VD11, magnetic transformer T1And resistance, electric capacity composition, rectifier bridge stack exports through magnetic transformer T1Inductance L3Meet Q1Drain electrode, booster diode VD11To electric capacity C11Export as PFC APFC, resistance R4Connect rectifier bridge stack output and introduce chip IC4Power end, and with magnetic transformer T1Inductance L4Through diode VD5Detecting circuit is chip IC4Control thresholding to open, resistance R2、R3Meet rectifier bridge stack output dividing potential drop sampling access chip IC4Multiplier one end, multiplier other end connecting resistance R8、R9Dividing potential drop sampling output voltage, multiplier output and Q1Source ground point of resistance connects peak value current sense comparator, chip IC4Output meets Q1Grid, magnetic transformer T1Inductance L5High frequency voltage is by diode VD6～9Rectification, diode VD10Voltage stabilizing, electric capacity C12Filtering connects benchmark crystal oscillator, frequency divider power end.
The present invention produces good effect: solve double semi-bridge inversion vibration high frequency stabilization, Phase synchronization power combing, reach the high-power electrodeless lamp illumination that single auto-oscillating half-bridge inverter is difficult to obtain, avoiding device temperature rise frequency of oscillation to change power imbalances, steady light increases the service life.
Accompanying drawing explanation
Fig. 1 technical solution of the present invention theory diagram
Fig. 2 benchmark crystal oscillating circuit
Fig. 3 dual-half-bridge injection phase-locking power synthesis nonpolar lamp circuit
Detailed description of the invention
With reference to Fig. 1,2,3 (Fig. 3 as a example by self-oscillation chip and half-bridge inverter A circuit, self-oscillation chip and half-bridge inverter B identical), the specific embodiment of the invention and embodiment: include power-supply filter EMI and rectifier bridge stack 10, PFC APFC1, electrodeless lamp tube 9, benchmark crystal oscillator 2,3, two self-oscillation chips of frequency divider 4,6, half-bridge inverter A5, half-bridge inverter B7, be added bonder 8 abnormal condition of lamp tube amperometric 11, wherein, benchmark crystal oscillator 2 is by quartz-crystal resonator JT, two inverter ics1、IC2And resistance, electric capacity C0、C1、C2Composition, first inverter ic1Input and output two ends bridging biasing resistor R1, and respectively and connect ground capacity C1、C2, meanwhile, also bridging series connection trimming capacitor C0Quartz-crystal resonator JT, benchmark crystal oscillator 2 output signal is through second inverter ic2Access frequency divider, self-oscillation chip IC5IR2153 includes RC agitator, semi-bridge inversion drive circuit, the RC agitator of two self-oscillation chips 4,6 connecting resistance R altogether11, electric capacity C15Synchronized oscillation, output connects by two MOS field effect tube Q through semi-bridge inversion drive circuit respectively2、Q3Half-bridge inverter A5, the half-bridge inverter B7 of complementary composition, self-oscillation chip 4 and half-bridge inverter A5 output power transformer T2With self-oscillation chip and half-bridge inverter B output power transformer T3Anti-phase feed-in is added bonder 8, and power combing is through magnet ring inductance L13、L14Coupled electrodeless fluorescent tube 9 starter, the divided device of benchmark crystal oscillator 2 signal 3 injects the RC agitator C of two self-oscillation chips 4,6TEnd locking phase, abnormal condition of lamp tube amperometric 11 signal accesses the RC agitator C of two self-oscillation chips 4,6 through audionTEnd controls the quick failure of oscillation that vibrates, electric network source accesses benchmark crystal oscillator 2, frequency divider 3 through power-supply filter EMI and rectifier bridge stack 10, PFC APFC1 output voltage+15V, and+400V accesses self-oscillation chip 4 and half-bridge inverter A5 and self-oscillation chip 6 and the power end of half-bridge inverter B7.
IC4Pin mark function: VCCChip logic controls low-tension supply, IDET zero current detection, and MULT multiplier inputs, and INV error amplifier inputs, and EA error amplifier exports, CS pulse width modulated comparator, and OUT driver exports, GND ground connection.
IC5Pin mark function: VCCChip low tension source, VBThe floating power supply of driver, HO drives Q2Grid, LO drives Q3Grid, VSFloating power supply returns, RTMeet vibration timing resistor, CTConnect vibration timing capacitor, OCM power signal ground connection.
Resistance R10Electric capacity C13Blood pressure lowering is supplied from chip IC of vibrating5Power-on, produces vibration, drives half-bridge power metal-oxide-semiconductor Q2、Q3, it being allowed to conduction and cut-off in turn, half-bridge inverter midpoint output square-wave voltage is through resistance R14, electric capacity C17, diode VD12、VD13Rectification is to electric capacity C13Charging, it is provided that self-oscillation chip IC5Power supply, resistance R after conversion10Stop power supply, reduce power consumption.Diode VD14To electric capacity C16Bootstrap charge circuit, floating for electric drive half-bridge inverter minimizing power consumption.
Two inverter power synthesis drag large-power lamp, and dilatation is reliable, but two self-oscillation chip oscillating voltage phase places should be consistent, unbalanced to eliminate non-linear intermodulation power, obtains stable output.To this end, introduce injection phase-locking to solve power combing Phase synchronization technology.
Benchmark crystal oscillator quartz resonator frequency is minimum by variations in temperature, highly stable.The divided device of reference signal injects self-oscillation chip RC oscillator locking phase place.Unimplanted reference signal RC agitator produces free oscillation frequency, injects reference signal RC oscillating voltage and its Vector modulation, and by self-oscillation chip additive mixing locking phase, oscillator signal only has a fixing phase contrast with injecting reference signal.Synchronization bandwidth and injecting power direct ratio, with RC agitator loaded Q inverse ratio, owing to reference signal injects the input of RC agitator, gain is high, and small-power i.e. lockable, two self-oscillation chips meet timing resistor R altogether11, electric capacity C15Synchronized oscillation is fast for locking time.Reference signal frequency dividing injects the high wen-frequency characteristics resonator of apolegamy upper frequency, locks tens of to hundreds of kilo hertzs of LC or RC agitators.Frequency divider IC3Binary system or decade computer frequency dividing.
Injection phase-locking need not voltage-controlled tune, phase demodulation, loop filtering, and the simple superior performance of circuit, fringe cost is low.Injection phase-locking there substantially is not difference with looped phase locking, is suitable for power combing light fixture stable oscillation stationary vibration frequency plot and synchronizes, it is to avoid the too high power imbalances of device temperature rise, steady light increases the service life.
It is added bonder T4Inductance L10By two half-bridge output power transformer T2、T3Inductance L7、L9Anti-phase exciting current superposition, 180 ° of low-order harmonics of phase contrast cancel out each other, and output current transformation doubles summation and delivers to lamp load, two equal balancing resistance R of electric current17No power waste.
Resistance R18, electric capacity C21Absorb suppression spike and smooth light.Electric capacity C20Inductance L15Resonance is prone to starter in note lock reference frequency.
Lamp abnormality detection is by lamp current mutual inductance magnet ring inductance L12Induced potential diode VD15Detection, electric capacity C22, resistance R19Filtering is through resistance R15、R16Dividing potential drop, audion VT1Trigger two self-oscillation chip RC agitator CTEnd, the comparator voltage of chip internal is reduced to VCCLess than/6, rapid failure of oscillation rapidly switches off inverter power pipe, from damage.
Electric ballast incoming transport power supply is resistive loads, and input voltage and electric current have bigger phase contrast, and power factor is low, by chip IC4L6562, power MOS pipe Q1Improving power factor, reduce current total harmonic distortion, output voltage is constant, ensures high-power oscillation amplitude steady light.Electrical grid transmission is passed through in power-supply filter EMI suppression vibration harmonic wave interference.
Embodiment alternating current AC90～250V, PFC APFC export DC400V, power factor 0.98, double semi-bridge inversion electric current 0.58A, drive two 100W electrodeless lamp tubes, efficiency 86%.
Claims (1)
1. a dual-half-bridge injection phase-locking power synthesis Non-polarized lamp, including power-supply filter EMI, rectifier bridge stack, PFC APFC, electrodeless lamp tube, it is characterized in that: also include benchmark crystal oscillator, frequency divider, two self-oscillation chips of model IR2153, half-bridge inverter A, half-bridge inverter B, it is added bonder, abnormal condition of lamp tube amperometric, wherein, benchmark crystal oscillator is by quartz-crystal resonator, two phase inverters and resistance, electric capacity forms, first phase inverter input and output two ends bridging biasing resistor, first phase inverter input is connected electric capacity C respectively with output two ends1、C2One end, electric capacity C1、C2Other end ground connection, meanwhile, the also quartz-crystal resonator of bridging series connection trimmer, benchmark crystal oscillator output signal accesses frequency divider through second phase inverter shaping buffering, self-oscillation chip includes RC agitator, semi-bridge inversion drive circuit, two self-oscillation chip RC agitator connecting resistance R altogether11, electric capacity C15Synchronized oscillation, the output of self-oscillation chip connects half-bridge inverter A, the half-bridge inverter B by two MOS field effect tube complementation compositions, self-oscillation chip and half-bridge inverter A output power transformer T through semi-bridge inversion drive circuit respectively2With self-oscillation chip and half-bridge inverter B output power transformer T3Anti-phase feed-in is added bonder, and power combing is through magnet ring inductance L13、L14Being coupled to electrodeless lamp tube starter, the divided device of benchmark crystal oscillation signal injects two self-oscillation chip RC agitator CTEnd locking phase, abnormal condition of lamp tube current detector signal is through lamp abnormality detection magnet ring inductance L12One terminating diode VD15Anode, other end ground connection, electric capacity C22, resistance R19One end parallel diode VD15Negative electrode, electric capacity C22, resistance R19Other end ground connection, diode VD15Negative electrode is through resistance R15、R16Dividing potential drop connects audion and triggers two self-oscillation chip RC agitator CTEnd controls the quick failure of oscillation that vibrates, and electric network source accesses benchmark crystal oscillator, frequency divider, self-oscillation chip and half-bridge inverter A and self-oscillation chip and the power end of half-bridge inverter B through power-supply filter EMI, rectifier bridge stack, PFC APFC output voltage；
PFC APFC is by model L6562 chip IC4, high-power MOS field effect transistor Q1, booster diode VD11, magnetic transformer T1And resistance, electric capacity composition, rectifier bridge stack VD1～4Output voltage is through magnetic transformer T1Inductance L3Meet Q1Drain electrode, booster diode VD11Anode, VD11Negative electrode meets electric capacity C11One end, electric capacity C11Other end ground connection, described electric capacity C11On voltage export DC voltage+400V, resistance R as APFC4Introduce rectifier bridge stack output voltage and chip IC is provided4Power supply VCC, magnetic transformer T1Inductance L4Through diode VD5Detecting circuit is chip IC4Control thresholding to open, resistance R2、R3Meet rectifier bridge stack output dividing potential drop sampling access chip IC4Multiplier input MULT, resistance R8、R9Dividing potential drop sampling output voltage connects chip IC4Error amplifier input terminal INV, chip IC4Outfan OUT connects field effect transistor Q through current-limiting resistance R61Grid, Q1Source electrode and earth resistance R7Junction point connect chip IC4Pulse width modulated comparator end CS, magnetic transformer T1Inductance L5High frequency voltage is through four diode VD6～VD9The bridge rectifier rectification of composition, diode VD10Voltage stabilizing, electric capacity C12Filtering is followed by benchmark crystal oscillator, frequency divider power end.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009038687A (en) * | 2007-08-02 | 2009-02-19 | Sony Corp | Image processor, and image processing method |
| CN202050584U (en) * | 2011-04-03 | 2011-11-23 | 阮树成 | Four-bridge oscillation high-voltage sodium lamp utilizing solar power |
| CN203181350U (en) * | 2013-04-15 | 2013-09-04 | 阮雪芬 | Double-half-bridge injection-locking power synthesis electrodeless lamp |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009038687A (en) * | 2007-08-02 | 2009-02-19 | Sony Corp | Image processor, and image processing method |
| CN202050584U (en) * | 2011-04-03 | 2011-11-23 | 阮树成 | Four-bridge oscillation high-voltage sodium lamp utilizing solar power |
| CN203181350U (en) * | 2013-04-15 | 2013-09-04 | 阮雪芬 | Double-half-bridge injection-locking power synthesis electrodeless lamp |
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Effective date of registration: 20191227 Address after: 225721 Nanzhu industrial concentration zone, Danan Town, Xinghua City, Taizhou City, Jiangsu Province (Bridge 4, Qingnian Road) Patentee after: Taizhou aluminum titanium Aviation Technology Co., Ltd Address before: 321100 No. 35, Taohuawu, Lanxi, Zhejiang, China Patentee before: Ruan Xuefen |
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