CN104103755B - Sodium bismuth titanate thin film system based resistance random access memory and preparation method thereof - Google Patents
Sodium bismuth titanate thin film system based resistance random access memory and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a sodium bismuth titanate thin film system based resistance random access memory and a preparation method thereof. The sodium bismuth titanate thin film system based resistance random access memory comprises a lower electrode, an upper electrode (104) and a sodium bismuth titanate thin film (103) which is arranged between the lower electrode and the upper electrode (104), wherein the sodium bismuth titanate thin film (103) and the upper electrode (104) form into a memory unit. The preparation method of the sodium bismuth titanate thin film system based resistance random access memory comprises generating a conducting oxidizing material layer through a magnetron sputtering method on a glass substrate or directly selecting a commercialized conducting glass substrate with a conducting oxidizing material coating; preparing the sodium bismuth titanate thin film on the conducting oxidizing material coating through a chemical solution deposition method; preparing the upper electrode on the sodium bismuth titanate thin film through a physical method and controlling the shape of the upper electrode through a mask. Compared with the prior art, the sodium bismuth titanate thin film system based resistance random access memory has the advantages of being good in resistance random access effect, simple in preparation method, low in cost and easy to prepare in a large scale and produce in an industrialized mode.
Description
Technical field
The present invention relates to the technical field of non-volatility memorizer, especially relate to based on bismuth-sodium titanate thin film system
Resistance random access memory and preparation method thereof.
Background technology
The information technology of high speed development depends on Large Copacity, high speed, non-volatile information storage technology.Non-volatile
Information storage technology because its still possess information data when power is off the characteristics of, be widely used in computer, automobile and modern times
The fields such as industry.Flash memories (Flash Memory) are the non-volatility memorizer of current main flow, but it has operation electricity
The problems such as pressure is high, speed is slow, endurance is poor.But the memory technology of the current information technology inevitable requirement information for developing rapidly is continuous
Improve, it is therefore necessary to develop low-power consumption, the non-volatility memorizer that speed is fast and the retention time is long.At present, ferroelectric random storage
Device (FeRAM), magnetoresistive RAM (MRAM), resistance random access memory (RRAM) are main candidates.RRAM's is main
Structure is " metal-recording medium-metal ".The Resistance states of RRAM can be controlled in high-impedance state (HRS) by applying electric pulse and
Switch between low resistance state (LRS), so as to realize the write-in and erasing of information.RRAM have simple structure, operating voltage it is low, switching
The advantage that speed is fast and the information retention time is long, is the study hotspot of current non-volatility memorizer.
The key technology of RRAM work is exactly electroresistance effect, i.e., can change the record of RRAM under applying voltage pulse
The resistance states of medium, make it switch between high-impedance state (HRS) and low resistance state (LRS).At present, oxide material such as composite calcium
Titanium ore type oxide (Pr1-xCaxMnO3、La1-xCaxMnO3、Pb(Zr1-xTix)O3、LiNbO3、SrTiO3Deng) and binary oxidation
Thing (NiO, TiO2、ZnO、ZrO2、SiO2, CuO etc.) be the most commonly used class material of research.
We have also discovered obvious electroresistance effect in bismuth-sodium titanate base film system recently.Ca-Ti ore type metatitanic acid
Bismuth sodium matrix system is a kind of new oxygen conduction electrolyte.[M.Li, M.J.Pietrowski, R.A.De Souza,
H.Zhang, I.M.Reaney, S.N.Cook, J.A.Kilner, D.C.Sinclair, A Family of Oxide Ion
Conductors Based on the Ferroelectric Perovskite Na0.5Bi0.5TiO3, Nature
Materials2014,13,31-35.] its feature is：1. the special lattice structure of bismuth-sodium titanate is conducive to oxonium ion in system
Diffusion, 2. by acceptor impurity (such as divalent magnesium) carry out titanium position doping or bismuth position trace bismuth lack means can increase body
So as to improve its oxygen conduction, the component proportion for 3. changing bismuth-sodium titanate system can change its oxygen to the oxygen vacancy concentration of system
Ionic conductivity.In addition Ca-Ti ore type metatitanic acid bismuth sodium can be carried out by extra electric field as a kind of ferroelectric material to its ferroelectricity
Regulation and control, this allows for bismuth-sodium titanate system and potential application value is suffered from terms of FeRAM, RRAM.In bismuth-sodium titanate film
Electroresistance effect found in system this new oxygen ion conductor has expanded the type of RRAM candidate materials, is non-waving
The exploitation of hair property resistance random access memory provides a kind of new thinking.
The content of the invention
The purpose of the present invention be exactly provided for the defect for overcoming above-mentioned prior art to exist a kind of preparation method it is simple,
Resistance random access memory based on bismuth-sodium titanate thin film system of low cost and preparation method thereof.
The purpose of the present invention can be achieved through the following technical solutions：A kind of resistance based on bismuth-sodium titanate thin film system
Random access memory, it is characterised in that including the bismuth-sodium titanate set between bottom electrode, Top electrode, and bottom electrode and Top electrode
Base film, wherein bismuth-sodium titanate base film and Top electrode constitute a memory cell.
The coated conductive oxide layer that described bottom electrode is set by glass substrate and thereon is constituted.
Described bottom electrode is obtained by the following method：On the glass substrate using the conductive oxygen of method growth of magnetron sputtering
Compound coating, described coated conductive oxide layer is the SnO of F- doping2Or In (FTO)2O3The SnO of-doping2(ITO)。
Described bottom electrode is the glass substrate that commercialized surface is covered with FTO or ITO coated conductive oxide layers.
Described bismuth-sodium titanate base film be Lacking oxygen doping bismuth-sodium titanate film, including titanium position mg-doped bismuth titanates
Sodium film, the bismuth-sodium titanate film of bismuth position trace bismuth missing, and titanium position mg-doped is plus the bismuth titanates of bismuth position trace bismuth missing
Sodium film.
Described Top electrode is inert electrode or electrochemical activity electrode.
Described inert electrode is gold or platinum electrode, and described electrochemical activity electrode is titanium, aluminium, copper or silver electrode.
A kind of preparation method of the resistance random access memory based on bismuth-sodium titanate thin film system, it is characterised in that the method
Comprise the following steps：Using the method for magnetron sputtering in insulating glass grown on substrates FTO or ITO coated conductive oxide layer or straight
Selecting is covered with the conducting glass substrate of FTO or ITO coated conductive oxide layers as the bottom electrode of memory with commercialized surface,
Bismuth-sodium titanate base film is prepared on coated conductive oxide layer using chemical solution deposition, finally using Physical in bismuth titanates
Top electrode is prepared on sodium base film, the shape of Top electrode is controlled by the shape of mask.
Described chemical solution deposition and Physical are comprised the following steps that：
Step 1：Prepare the precursor solution of bismuth-sodium titanate base film：
With EGME and glacial acetic acid as solvent, acetylacetone,2,4-pentanedione is complexant, by three add reactor in, according to institute
The component proportion of the bismuth-sodium titanate base film for needing, by the solute of respective amount：Positive four butyl ester of metatitanic acid, Mg (NO3)2·6H2O、Bi
(NO3)3·5H2O and NaNO3It is sequentially added into above-mentioned reactor, is stirred at room temperature to each solute and is completely dissolved, obtains
Required precursor solution, finally adjusts the molar concentration of the precursor solution using EGME；
Step 2：Bismuth-sodium titanate base film is prepared using the method for spin-coating：
The precursor solution is coated uniformly on bottom electrode using spin coater obtains uniform film layer, often obtain one layer
After film, gained film layer is first carried out into preannealing in the range of 250-350 DEG C, then using rta technique, at 600-650 DEG C
5min is incubated in temperature range, in oxygen atmosphere, said process is repeated, deposit thickness is the bismuth-sodium titanate base of 150nm~200nm
Film；
Step 3：Top electrode is deposited on the bismuth-sodium titanate base film of step 2 gained using Physical, by mask control
The shape of Top electrode, that is, obtain the Top electrode of the resistance random access memory.
Described acetylacetone,2,4-pentanedione is 1: 1 with the mol ratio of positive four butyl ester of metatitanic acid, described glacial acetic acid and EGME
Volume ratio 1: (1~10)；Acetylacetone,2,4-pentanedione complexant is 1 with the volume ratio of EGME: (1~10)；
The molar concentration that described use EGME adjusts the precursor solution is (0.1~0.5) mol/L；
The rotating speed of described spin coater is the elder generation equal glue 10s of 1000rpm, then 3000rpm spin coatings 30s.
The thickness of described bismuth-sodium titanate base film is 150nm~200nm.
Bismuth-sodium titanate sill is a kind of new oxygen ion conductor.We are thin in the bismuth-sodium titanate of titanium position mg-doped in the recent period
Obvious resistor random-access storage effect is observed in film, the type of the candidate material of RRAM has been expanded in this discovery.It is logical in addition
The acceptor doping for crossing titanium position forms flexible chemical bond, is conducive to the diffusion of oxonium ion in bismuth-sodium titanate system, improves the oxygen of system
Ionic conductivity, additionally, being adjusted by the component proportion or doping ratio to bismuth-sodium titanate system, can obtain various tools
There is the component of different ionic conductivity, improve the diversity of the high and low resistance state of the resistance random access memory.Such as bismuth-sodium titanate base
The component of film includes Na0.5Bi0.49TiO2.985、Na0.5Bi0.5Ti0.98Mg0.02O2.98、Na0.5Bi0.49Ti0.98Mg0.02O2.965Deng.
The present invention propose a kind of resistance random access memory based on new bismuth-sodium titanate based oxygen ion conductor film and
Its preparation method, and give the structure of the resistance random access memory.The resistance random access memory under positive scanning voltage,
Its on-off ratio is more than 104, and in the low scanning voltage of+0.3V, the value of its maximum on-off ratio is up to 30159.
The storage principle of above-mentioned bismuth-sodium titanate base film resistance random access memory is as shown in Figure 3：Signal source 200 is used to provide
Positive and negative scanning voltage signal；201 is that signal writes probe；The 202 and 203 upper and lower electrodes for being respectively resistance random access memory；
204 is bismuth-sodium titanate base film, for record storage information.
Compared with prior art, the advantage of the invention is that：
Using new bismuth-sodium titanate based oxygen ion conductor film as resistance random access memory recording medium, it has
Obvious resistor random-access storage effect, under the low-voltage of+0.3V, its maximum switch ratio is 30159.While perovskite type titanium
Sour bismuth sodium-based material makes it in FeRAM side as a kind of ferroelectric material, the characteristic that can adjust its ferroelectric properties using extra electric field
Also there is potential using value in face, so as to be expected to prepare multi-functional non-volatility memorizer.
The described resistance random access memory preparation method based on bismuth-sodium titanate thin film system is simple, low cost, especially adopts
When preparing bismuth-sodium titanate base film with chemical solution deposition, its component proportion is easily controllable, in combination with bismuth-sodium titanate system
Oxygen conduction and its component between substantial connection, a series of different material of oxygen conductions can be prepared,
The distribution of the high and low resistance state of the resistance random access memory is substantially increased, such that it is able to be applied to the resistance shape to recording medium
State has in the resistance random access memory part of different requirements.
Brief description of the drawings
Fig. 1：Na in embodiment 10.5Bi0.5Ti0.98Mg0.02O2.98The XRD spectrum of film；
Fig. 2：The structural representation of bismuth-sodium titanate base film resistance random access memory；
Fig. 3：The voltage-current curve test schematic diagram of bismuth-sodium titanate base film resistance random access memory；
Fig. 4：Na is based in embodiment 10.5Bi0.5Ti0.98Mg0.02O2.98The voltage-to-current of the resistance random access memory of film
On-off ratio-the voltage curve of graph of relation and the resistance random access memory as obtained by the current -voltage curve.
Specific embodiment
The present invention is described in further detail below by way of specific embodiment, following examples can make this professional skill
Art personnel are more completely understood the present invention, but do not limit the invention in any way.
Embodiment 1：
First, selected bismuth-sodium titanate base film composition is Na0.5Bi0.5Ti0.98Mg0.02O2.98, corresponding resistor random-access deposits
The preparation process of reservoir is：
Step 1：The cleaning of conducting glass substrate, using the ITO electro-conductive glass of directly purchase as substrate, selection surface is complete
The ito glass substrate of good and no marking, by it, ultrasonic vibration cleans 5min to its surface uniformly one layer of attachment in absolute ethyl alcohol
Liquid film, removes the spot of substrate surface attachment, then dries it on hot plate, standby.
Step 2：Grown using chemical solution deposition on the clean ito substrate of step 1 gained
Na0.5Bi0.5Ti0.98Mg0.02O2.98Film, the Na according to Fig. 10.5Bi0.5Ti0.98Mg0.02O2.98The XRD spectrum of film understands
Gained Na0.5Bi0.5Ti0.98Mg0.02O2.98Film is the perovskite structure of pure phase.
Step 3：By ion sputtering process, using mask plate, (mask plate is shaped as the length of equally distributed 0.5mm × 1mm
Square hole), in Na0.5Bi0.5Ti0.98Mg0.02O2.98It is the Au Top electrodes of 100nm or so, electrode size that thickness is prepared on film
It is 0.5mm × 1mm.
Above-mentioned gained based on Na0.5Bi0.5Ti0.98Mg0.02O2.98The structure of the resistance random access memory of film such as Fig. 2 institutes
Show：Including the bottom electrode, the Top electrode 104 that are made up of glass substrate 101 and the coated conductive oxide layer for setting thereon 102, and
The bismuth-sodium titanate base film 103 set between bottom electrode and Top electrode 104, wherein bismuth-sodium titanate base film 103 and Top electrode 104
Constitute a memory cell.
Na prepared by the use chemical solution deposition described in step 20.5Bi0.5Ti0.98Mg0.02O2.98The specific behaviour of film
It is as process：
1) positive four butyl ester of metatitanic acid and acetylacetone,2,4-pentanedione are added according to 1: 1 mol ratio and fills the clean of a certain amount of EGME
In net beaker, to one magneton of cleaning of addition in the beaker, and the beaker is placed on magnetic stirring apparatus, stirred at room temperature
To the dissolving of metatitanic acid positive four butyl ester, at the same in whipping process to above-mentioned beaker in the metatitanic acid of glacial acetic acid to partial hydrolysis is dropwise added dropwise
Positive four butyl esters dissolving is complete and suppresses the further hydrolysis of positive four butyl ester of metatitanic acid.After the positive four butyl esters dissolving of metatitanic acid is complete, according to
Na0.5Bi0.5Ti0.98Mg0.02O2.98Mol ratio, weigh the Mg (NO of respective amount3)2·6H2O、Bi(NO3)3·5H2O and
NaNO3Be placed in above-mentioned beaker (needs closing beaker mouthful to prevent dust in air etc. from falling into solution in whipping process
Influence precursor liquid quality), it is stirred at room temperature to solute therein and is completely dissolved, needed for obtaining
Na0.5Bi0.5Ti0.98Mg0.02O2.98Precursor solution.The concentration for finally adjusting above-mentioned precursor solution using EGME is
0.3mol/L。
2) Na is prepared using the method for spin-coating0.5Bi0.5Ti0.98Mg0.02O2.98Film, adjust spin coater rotating speed be
The first equal glue 10s of 1000rpm, then 3000rpm spin coating 30s, to obtain uniform film.Clean conducting glass substrate is placed in rotation
On the operating desk of painting machine, precursor liquid is dropwise dropped to added with 0.22 μm of disposable syringe of organic filter head using one clean
On net ITO conducting glass substrates, rotation whirl coating is carried out.After often getting rid of one layer, gained film layer is carried out in the range of 250-350 DEG C
Preannealing 5min, then using rta technique, is incubated 5min in 650 DEG C of oxygen atmosphere, repeats said process, deposition
Thickness is the Na of 150nm0.5Bi0.5Ti0.98Mg0.02O2.98Film；
2nd, based on Na0.5Bi0.5Ti0.98Mg0.02O2.98The current-voltage loop testing of the resistance random access memory of film：
As shown in figure 3, being based on Na0.5Bi0.5Ti0.98Mg0.02O2.98The current-voltage of the resistance random access memory of film is special
The test schematic diagram of linearity curve：The current-voltage for measuring prepared resistance random access memory using Keithley2400 is special
Linearity curve.In test process, test probe is added on the upper and lower electrode of Top electrode respectively, while keeping bottom electrode ground connection, passes through
Test probe applies the voltage of corresponding continuous scanning on upper and lower electrode.Electric current passes through Na0.5Bi0.5Ti0.98Mg0.02O2.98It is thin
Film flows between upper and lower electrode, and the current-voltage characteristic curve of gained is as shown in Figure 4.According to 0V →+2V → 0V → -2V →
The scan mode of 0V (1 → 2 → 3 → 4) is tested, and the initial state of system is high-impedance state (HRS), in 0V →+2V (process 1)
Scanning process in, system is maintained as HRS, but in process 1, when forward scan voltage be more than a certain value when, flow through body
The electric current of system increases sharply, and system gradually changes to low resistance state (LRS).In the scanning process of+2V → 0V (process 2), system
Remain LRS.In the scanning process of 0V → -2V (process 3), system is HRS, but in process 3, when negative sense scanning voltage
During more than a certain value, the electric current for flowing through system increases sharply, and system gradually changes to low resistance state (LRS).In -2V → 0V (processes
4) in scanning process, system is LRS.On-off ratio-voltage curve (Fig. 4 as obtained by the current-voltage characteristic curve of the device
Embedded figure) understand, the maximum of the resistance random access memory its on-off ratio under the scanning voltage of low+0.3V is up to 30159.
Embodiment 2：
The preparation method of bismuth-sodium titanate base resistance random access memory involved in the present embodiment is same as Example 1, area
Selected bottom electrode is not only that for FTO conducting glass substrates, and the annealing temperature of film is 600 DEG C.By XRD to this implementation
The bismuth-sodium titanate base film of gained has carried out structural characterization in example.Film shows as the perovskite structure of pure phase, but it is tied
Crystalline substance is less than the gained film on ITO conducting glass substrates.
Embodiment 3
The preparation method of bismuth-sodium titanate base resistance random access memory involved in the present embodiment is same as Example 1, area
It is not only that the bottom electrode used in the present embodiment is the ITO or FTO conductions prepared on the glass substrate by magnetron sputtering method
Oxide coating.Mainly include the following steps that：
(1) using magnetron sputtering method in insulating glass grown on substrates ITO coated conductive oxide layers as the resistance
The bottom electrode of random access memory；
(2) method for using as described in example 1 above prepared on the ITO coated conductive oxide layers of gained thickness for
The Na of 150nm0.5Bi0.5Ti0.98Mg0.02O2.98Film.
Embodiment 4：
The preparation method of bismuth-sodium titanate base resistance random access memory involved in the present embodiment is same as Example 1, area
The component proportion for not being only that selected bismuth-sodium titanate base film is：Na0.5Bi0.49TiO2.985。
Embodiment 5：
The preparation method of bismuth-sodium titanate base resistance random access memory involved in the present embodiment is same as Example 1, area
The component for not being only that selected bismuth-sodium titanate base film is：Na0.5Bi0.49Ti0.98Mg0.02O2.965。
Embodiment 6
The preparation method of bismuth-sodium titanate base resistance random access memory involved in the present embodiment is same as Example 1, area
The preparation Na used in the present embodiment is not only that0.5Bi0.5Ti0.98Mg0.02O2.98The concentration of the precursor solution of film is
0.1mol/L。
Embodiment 7
The preparation method of bismuth-sodium titanate base resistance random access memory involved in the present embodiment is same as Example 1, area
The preparation Na used in the present embodiment is not only that0.5Bi0.5Ti0.98Mg0.02O2.98The concentration of the precursor solution of film is
0.5mol/L.Described glacial acetic acid is 1: 1 with the mol ratio of positive four butyl ester of metatitanic acid, described acetylacetone,2,4-pentanedione and positive four butyl ester of metatitanic acid
Mol ratio be 1: 1, the volume ratio 1: 1 of described glacial acetic acid and EGME；Acetylacetone,2,4-pentanedione complexant and EGME
Volume ratio be 1: 1.
Embodiment 8
The preparation method of bismuth-sodium titanate base resistance random access memory involved in the present embodiment is same as Example 1, area
Prepared Na in the present embodiment is not only that0.5Bi0.5Ti0.98Mg0.02O2.98The thickness of film is 200nm.Described glacial acetic acid
The mol ratio of four butyl ester positive with metatitanic acid is 1: 1, and described acetylacetone,2,4-pentanedione and the mol ratio of positive four butyl ester of metatitanic acid is 1: 1, described
The volume ratio 1: 10 of glacial acetic acid and EGME；Acetylacetone,2,4-pentanedione complexant is 1: 10 with the volume ratio of EGME.
Although being described to specific embodiment of the invention above in conjunction with accompanying drawing, the invention is not limited in upper
Specific embodiment is stated, above-mentioned specific embodiment is only schematical, be not restricted, the common skill of this area
Art personnel under enlightenment of the invention, in the case of present inventive concept and scope of the claimed protection is not departed from, can be with
The specific conversion of diversified forms is made, these are belonged within protection scope of the present invention.
Claims (9)
1. a kind of resistance random access memory based on bismuth-sodium titanate thin film system, it is characterised in that including bottom electrode, Top electrode
(104) the bismuth-sodium titanate base film (103) for, and between bottom electrode and Top electrode (104) setting, wherein bismuth-sodium titanate base film
(103) and Top electrode (104) constitute a memory cell；
The bismuth-sodium titanate film that described bismuth-sodium titanate base film (103) adulterates for Lacking oxygen, including titanium position mg-doped metatitanic acid
Bismuth sodium film, the bismuth-sodium titanate film of bismuth position trace bismuth missing, and titanium position mg-doped is plus the metatitanic acid of bismuth position trace bismuth missing
Bismuth sodium film.
2. a kind of resistance random access memory based on bismuth-sodium titanate thin film system according to claim 1, it is characterised in that
Described bottom electrode is made up of glass substrate (101) and the coated conductive oxide layer (102) for setting thereon.
3. a kind of resistance random access memory based on bismuth-sodium titanate thin film system according to claim 1 and 2, its feature exists
In described bottom electrode is obtained by the following method：On the glass substrate using the method growth conductive oxide of magnetron sputtering
Coating, described coated conductive oxide layer is the SnO of F- doping2Or In (FTO)2O3The SnO of-doping2(ITO)。
4. a kind of resistance random access memory based on bismuth-sodium titanate thin film system according to claim 1 and 2, its feature exists
In described bottom electrode is the glass substrate that commercialized surface is covered with FTO or ITO coated conductive oxide layers.
5. a kind of resistance random access memory based on bismuth-sodium titanate thin film system according to claim 1, it is characterised in that
Described Top electrode (104) is inert electrode or electrochemical activity electrode.
6. a kind of resistance random access memory based on bismuth-sodium titanate thin film system according to claim 5, it is characterised in that
Described inert electrode is gold or platinum electrode, and described electrochemical activity electrode is titanium, aluminium, copper or silver electrode.
7. a kind of preparation method of the resistance random access memory based on bismuth-sodium titanate thin film system as claimed in claim 1, its
It is characterised by, the method is comprised the following steps：Led in insulating glass grown on substrates FTO or ITO using the method for magnetron sputtering
Electroxidation thing coating is directly covered with the electric glass substrate conduct of FTO or ITO coated conductive oxide layers from commercialized surface
The bottom electrode of memory, bismuth-sodium titanate base film is prepared using chemical solution deposition on coated conductive oxide layer, is finally adopted
Top electrode is prepared on bismuth-sodium titanate base film with Physical, the shape of Top electrode is controlled by the shape of mask.
8. the preparation method of a kind of resistance random access memory based on bismuth-sodium titanate thin film system according to claim 7,
Characterized in that, described chemical solution deposition and Physical are comprised the following steps that：
Step 1：Prepare the precursor solution of bismuth-sodium titanate base film：
With EGME and glacial acetic acid as solvent, acetylacetone,2,4-pentanedione is complexant, by three add reactor in, according to required
The component proportion of bismuth-sodium titanate base film, by the solute of respective amount：Positive four butyl ester of metatitanic acid, Mg (NO3)2·6H2O、Bi(NO3)3·
5H2O and NaNO3Be sequentially added into above-mentioned reactor, be stirred at room temperature to each solute and be completely dissolved, obtain needed for before
Liquid solution is driven, the molar concentration of the precursor solution is finally adjusted using EGME；
Step 2：Bismuth-sodium titanate base film is prepared using the method for spin-coating：
The precursor solution is coated uniformly on bottom electrode using spin coater obtains uniform film layer, often obtain a tunic
Afterwards, gained film layer is first carried out into preannealing in the range of 250-350 DEG C, then using rta technique, in 600-650 DEG C of temperature
In the range of degree, 5min is incubated in oxygen atmosphere, repeats said process, deposit thickness is thin for the bismuth-sodium titanate base of 150nm~200nm
Film；
Step 3：Top electrode is deposited on the bismuth-sodium titanate base film of step 2 gained using Physical, upper electricity is controlled by mask
The shape of pole, that is, obtain the Top electrode of the resistance random access memory.
9. the preparation method of a kind of resistance random access memory based on bismuth-sodium titanate thin film system according to claim 8,
Characterized in that, described acetylacetone,2,4-pentanedione complexant is 1 with the mol ratio of positive four butyl ester of metatitanic acid：1；Described glacial acetic acid and second two
The volume ratio of alcohol methyl ether is 1：(1~10)；Described acetylacetone,2,4-pentanedione is 1 with the volume ratio of EGME：(1~10)；
The molar concentration that described use EGME adjusts the precursor solution is (0.1~0.5) mol/L；
The rotating speed of described spin coater is the elder generation equal glue 10s of 1000rpm, then 3000rpm spin coatings 30s.
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| CN103708739A (en) * | 2013-07-02 | 2014-04-09 | 济南大学 | Zinc-doped sodium bismuth titanate film and low temperature preparation method thereof |
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| US8067762B2 (en) * | 2006-11-16 | 2011-11-29 | Macronix International Co., Ltd. | Resistance random access memory structure for enhanced retention |
| US20100135061A1 (en) * | 2008-12-02 | 2010-06-03 | Shaoping Li | Non-Volatile Memory Cell with Ferroelectric Layer Configurations |
| CN103311434B (en) * | 2013-05-27 | 2015-07-01 | 河北大学 | Transparent resistive random access memory and production method thereof |
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| CN103708739A (en) * | 2013-07-02 | 2014-04-09 | 济南大学 | Zinc-doped sodium bismuth titanate film and low temperature preparation method thereof |
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