CN104103725B - Diode modules and its production method and optical interconnection device - Google Patents
Diode modules and its production method and optical interconnection device Download PDFInfo
- Publication number
- CN104103725B CN104103725B CN201310126774.4A CN201310126774A CN104103725B CN 104103725 B CN104103725 B CN 104103725B CN 201310126774 A CN201310126774 A CN 201310126774A CN 104103725 B CN104103725 B CN 104103725B
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- optical waveguide
- layer
- area
- optical
- optical fiber
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/428—Electrical aspects containing printed circuit boards [PCB]
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Abstract
A kind of diode modules, including semiconductor base layer, diode epitaxial layer and optical waveguide.The semiconductor base layer has a surface, the surface includes the outer layer growth area being disposed adjacent successively, optical waveguide fixed area and intelligent acess area, the intelligent acess area offers optical fiber receiving groove, and the extending direction of optical fiber receiving groove is directed toward the optical waveguide fixed area.The diode epitaxial layer is formed in the outer layer growth area, which includes being formed with multiple quantum trap structure sheaf between the semiconductor buffer layer and PN junction being arranged in order far from the surface, the PN junction.The optical waveguide is formed in the optical waveguide fixed area, and the optical waveguide wherein one side is opposite with the multiple quantum trap structure sheaf one side.The invention further relates to the production method of the diode modules and optical interconnection devices.
Description
Technical field
The present invention relates to optoelectronic semiconductor epitaxy and optical interconnection device, more particularly to a kind of diode epitaxy module and its system
Make method, and the optical interconnection device using the diode epitaxy module.
Background technology
In optical communication device, generally includes laser diode, photodiode and be set to laser diode and photoelectricity
Optical waveguide and optical fiber between diode for the light that laser diode is sent out to be transmitted to photoelectricity polar body.Usually, laser
Diode and photodiode are the structure of separation, in use, by encapsulated laser diode and photodiode and light
Waveguide makees further encapsulation and forms modular structure, and then forms optical interconnection device.However, such optical interconnection device have passed through
Multiple modularity encapsulation, volume is larger, is unfavorable for photovoltaic miniature requirement.
Invention content
In view of this, providing a kind of diode modules of small volume and its production method and optical interconnection device actually must
It wants.
A kind of diode modules, including semiconductor base layer, diode epitaxial layer and optical waveguide.The semiconductor base layer has
There is a surface, which includes the outer layer growth area being disposed adjacent successively, optical waveguide fixed area and intelligent acess area, the optical fiber
Access area offers optical fiber receiving groove, and the extending direction of optical fiber receiving groove is directed toward the optical waveguide fixed area.The diode
Epitaxial layer is formed in the outer layer growth area, which includes along the semiconductor buffer being arranged in order far from the surface
Layer and PN junction are formed with multiple quantum trap structure sheaf between the PN junction.The optical waveguide is formed in the optical waveguide fixed area, the light wave
It is opposite with the multiple quantum trap structure sheaf one side to lead wherein one side.
A kind of production method of diode modules, including step：Semiconductor base layer is provided, which has
One surface, the surface include the outer layer growth area being disposed adjacent successively, optical waveguide fixed area and intelligent acess area；In semiconductor
The intelligent acess area on the surface of basal layer opens up optical fiber receiving groove, and the extending direction direction optical waveguide which accommodates groove is solid
Determine area；Diode epitaxial layer is grown in the outer layer growth area on the surface of the semiconductor base layer using epitaxial growth method, this two
Pole pipe epitaxial layer includes being formed with weight between the semiconductor buffer layer and PN junction being arranged in order far from the surface, the PN junction
Sub- well construction layer；And optical waveguide is formed in the optical waveguide fixed area, and make the optical waveguide wherein one side and the multiple quantum
Well construction layer one side is opposite, forms laser diode epitaxy module.
A kind of optical interconnection device, including laser diode epitaxy module, photodiode epitaxy module and optical fiber.The laser
The first semiconductor base layer of diode epitaxy module, laser diode epitaxial layer and the first optical waveguide.First semiconductor base
It includes that the first outer layer growth area being disposed adjacent successively, the first optical waveguide are fixed that layer, which has a first surface, the first surface,
Area and the first intelligent acess area, the first intelligent acess area offer the first optical fiber receiving groove, which accommodates groove
Extending direction be directed toward the first optical waveguide fixed area.The laser diode epitaxial layer is formed in the first outer layer growth area,
The laser diode epitaxial layer include along be arranged in order far from the first surface N-type buffer layer, the first n type semiconductor layer, the
One multiple quantum trap structure sheaf and the first p type semiconductor layer.First optical waveguide is formed in the first optical waveguide fixed area, this
One optical waveguide wherein one side is opposite with the first multiple quantum trap structure sheaf one side.The photodiode epitaxy module includes
Second semiconductor base layer, photodiode epitaxial layer and the second optical waveguide.Second semiconductor base layer has one second table
Face, the second surface include that the second outer layer growth area being disposed adjacent successively, the second optical waveguide fixed area and the second optical fiber connect
Enter area, which offers the second optical fiber receiving groove, and the extending direction which accommodates groove is directed toward
The second optical waveguide fixed area.The photodiode epitaxial layer is formed in the second outer layer growth area, outside the photodiode
It includes along p-type buffer layer, the second p type semiconductor layer, the second multiple quantum trap knot being arranged in order far from the second surface to prolong layer
Structure layer and the second p type semiconductor layer.Second optical waveguide is formed in the second optical waveguide fixed area, second optical waveguide wherein one
Side is opposite with the second multiple quantum trap structure sheaf one side.One end of the optical fiber is contained in the first optical fiber container and end
Face and the first optical waveguide face, the other end are contained in the second optical fiber container and end face and the second optical waveguide face.
Compared with the existing technology, the laser diode epitaxy module and photoelectricity two in the optical interconnection device of the embodiment of the present invention
Pole pipe epitaxy module combines optical waveguide, and has opened up optical fiber in basal layer and accommodated groove, when in use, only need to be by laser two
Pole pipe epitaxy module and photodiode epitaxy module are fixedly connected on circuit board and connect optical fiber, multiple without carrying out
Modularity encapsulation, simple in structure and volume smaller is conducive to the miniaturization of photovoltaic.
Description of the drawings
Fig. 1 is the semiconductor base layer stereoscopic schematic diagram that first embodiment of the invention provides.
Fig. 2 is the stereoscopic schematic diagram after semiconductor base layer formation optical fiber receiving groove in Fig. 1.
Fig. 3 is the sectional view after growth laser diode epitaxial layer in the semiconductor base layer of Fig. 2.
Fig. 4 is the sectional view of the laser diode epitaxy module formed after the semiconductor base layer of Fig. 3 forms optical waveguide.
Fig. 5 is the sectional view for the photodiode epitaxy module that second embodiment of the invention provides.
Fig. 6 is the optical interconnection device sectional view that third embodiment of the invention provides.
Fig. 7 is the vertical view of Fig. 6 optical interconnection devices.
Main element symbol description
| Semiconductor base layer | 10,10a |
| Surface | 101 |
| Outer layer growth area | 102 |
| Optical waveguide fixed area | 103 |
| Intelligent acess area | 104 |
| Optical fiber accommodates groove | 105,105a |
| Laser diode epitaxial layer | 20 |
| N-type buffer layer | 201 |
| N type semiconductor layer | 202,204a |
| Multiple quantum trap structure sheaf | 203,203a |
| P type semiconductor layer | 204,202a |
| Light-emitting face | 205 |
| Laser diode epitaxy module | 100 |
| Optical waveguide | 30,30a |
| Photodiode epitaxy module | 200 |
| Photodiode epitaxial layer | 20a |
| P-type buffer layer | 201a |
| Light incident surface | 205a |
| Optical interconnection device | 300 |
| First circuit board | 40 |
| Second circuit substrate | 50 |
| Optical fiber | 60 |
Following specific implementation mode will be further illustrated the present invention in conjunction with above-mentioned attached drawing.
Specific implementation mode
It please referring to Fig.1 to Fig.4, the embodiment of the present invention provides a kind of production method of laser diode epitaxy module, including
Following steps：
The first step, referring to Fig. 1, providing semiconductor base layer 10.
In the present embodiment, the material of the semiconductor base layer 10 is indium phosphide（InP）, for growing the outer of laser diode
Prolong layer and setting optical waveguide.Certainly, the semiconductor base layer 10 or other materials, as long as laser diode can be grown
Epitaxial layer, and be not limited to this embodiment.
It includes the outer layer growth area being disposed adjacent successively that the semiconductor base layer 10, which has a surface 101, the surface 101,
102, optical waveguide fixed area 103 and intelligent acess area 104.The outer layer growth area 102 is used to grow the extension of laser diode
Layer, for the optical waveguide fixed area 103 for being fixed on optical waveguide, which is used to access the end of an optical fiber.
Second step, referring to Fig. 2, opening up optical fiber receiving in the intelligent acess area 104 on the surface of semiconductor base layer 10 101
Groove 105.
In the present embodiment, optical fiber receiving groove 105 is the V-shaped groove that cross section is triangle.It is understood that the light
The section shape shape of fibre receiving groove may be trapezoidal, rectangle or polygon etc., as long as can make optical fiber receiving in the inner.
It is preferably V-shaped groove that the optical fiber, which accommodates groove 105, is positioned because two inner walls of V-shaped groove can engage optical fiber, can be preferably by optical fiber
Axial direction positioned.The extending direction that the optical fiber accommodates groove 105 is directed toward optical waveguide fixed area 103.
Third walks, referring to Fig. 3, the epitaxial layer using epitaxial growth method on the surface of the semiconductor base layer 10 101 is given birth to
Long area 102 grows laser diode epitaxial layer 20.
In the present embodiment, which can pass through chemical gaseous phase depositing method（MOCVD）It is grown,
The laser diode epitaxial layer 20 includes along N-type buffer layer 201, the n type semiconductor layer being arranged in order far from 101 direction of surface
202, multiple quantum trap structure sheaf 203, p type semiconductor layer 204, the p type semiconductor layer 204 and n type semiconductor layer 202 form one
PN junction, perpendicular to PN junction face a pair of parallel plane constitute resonant cavity, the multiple quantum trap structure sheaf 203 adjacent to a pair
Parallel plane and be light-emitting face 205, the light-emitting face 205 and the optical waveguide fixed area 103 perpendicular to the side in PN junction face.This
In embodiment, the N-type buffer layer 201, n type semiconductor layer 202 and p type semiconductor layer 204 can be but be not limited to iii-v material
Material.
4th step forms laser diode epitaxy referring to Fig. 4, optical waveguide 30 is formed in the optical waveguide fixed area 103
Module 100.
In the present embodiment, which is thin-film waveguide, the side of the optical waveguide 30 and the laser diode epitaxial layer
20 is adjacent, and the light-emitting face 205 of the multiple quantum trap structure sheaf 203 is opposite with the optical waveguide 30, in the present embodiment, the light wave
30 are led with the laser diode epitaxial layer 20 to be close to.In the present embodiment, the material of the optical waveguide 30 can be the titanium dioxide of doping
Silicon may be used epitaxial growth method and be formed in the optical waveguide fixed area 103.Certainly, which can also pass through bonding
Method be formed in the optical waveguide fixed area 103, and be not limited to this embodiment.It is appreciated that the optical waveguide 30 can also it
The optical waveguide of its type, such as flat waveguide.
Referring to Fig. 4, the laser diode epitaxy module 100 of the present embodiment includes semiconductor base layer 10, two pole of laser
Pipe epitaxial layer 20 and optical waveguide 30.It includes being disposed adjacent successively that the semiconductor base layer 10, which has a surface 101, the surface 101,
Outer layer growth area 102, optical waveguide fixed area 103 and intelligent acess area 104, intelligent acess area 104 offer optical fiber receiving
Groove 105, the extending direction which accommodates groove 105 are directed toward optical waveguide fixed area 103.20 shape of laser diode epitaxial layer
At in the outer layer growth area 102, which includes along the N-type being arranged in order far from 101 direction of surface
Buffer layer 201, n type semiconductor layer 202, multiple quantum trap structure sheaf 203 and p type semiconductor layer 204, the multiple quantum well construction
Layer 203 has the light-emitting face 205 adjacent with the optical waveguide fixed area 103.The optical waveguide 30 is formed in the optical waveguide fixed area
103 and opposite with the light-emitting face 205.
Referring to Fig. 5, second embodiment of the invention provides a kind of photodiode epitaxy module 200, the photodiode
Epitaxy module 200 is similar to the structure of laser diode epitaxy module 100 of first embodiment, the difference is that two pole of photoelectricity
Pipe epitaxy module 200 includes photodiode epitaxial layer 20a, to replace the laser diode of laser diode epitaxy module 100
Epitaxial layer 20.Photodiode epitaxy module 200 includes and the semiconductor base layer 10 of laser diode epitaxy module 100, light
Waveguide 30 and optical fiber receiving 105 structure of groove correspond to identical semiconductor base layer 10a, optical waveguide 30a and optical fiber receiving groove
105a.Photodiode epitaxial layer 20a includes along the p-type buffer layer being arranged in order far from the directions semiconductor base layer 10a
201a, p type semiconductor layer 202a, multiple quantum trap structure sheaf 203a and n type semiconductor layer 204a, the multiple quantum trap structure sheaf
203a has the light incident surface 205a adjacent with optical waveguide 30a.
Fig. 6 and Fig. 7 are please referred to, third embodiment of the invention provides a kind of optical interconnection device 300, including one first circuit base
Plate 40, the photodiode epitaxy module 200 and two of laser diode epitaxy module 100, two of a second circuit substrate 50, two
Root optical fiber 60.First circuit board 40 and second circuit substrate 50 all have conducting wire（It is not shown）, two laser two
Pole pipe epitaxy module 100 is both secured to first circuit board 40, and passes through electrode respectively（It is not shown）With the first circuit base
The conducting wire of plate 40 is electrically connected；Two photodiode epitaxy modules 200 are both secured to the second circuit substrate 50, and divide
Electrode is not passed through（It is not shown）It is electrically connected with the conducting wire of the second circuit substrate 50.The both ends difference of wherein one optical fiber 60
Receiving is sticked in the optical fiber receiving groove 105 of one of laser diode epitaxy module 100 and one of photodiode
The optical fiber of epitaxy module 200 accommodates groove 105a, and two end faces of the optical fiber 60 distinguish face and correspond to adjacent optical waveguide 30
And 30a；The both ends of an other optical fiber 60 accommodate the optical fiber receipts for being sticked in another laser diode epitaxy module 100 respectively
The optical fiber for holding groove 105 and another photodiode epitaxy module 200 accommodates groove 105a, and two ends of the optical fiber 60
Distinguish face and correspond to adjacent optical waveguide 30 and 30a in face.The optical fiber 60 can be by the light-emitting face of photodiode epitaxy module 200
205 send out and the light conducted via optical waveguide 30 is transmitted to optical waveguide 30a, and are further transmitted to light incident surface 205a simultaneously
The multiple quantum trap structure sheaf 203a for entering photodiode epitaxy module 200 makes the photodiode epitaxy module 200 produce
Raw electric signal is simultaneously conducted to the conducting wire of the second circuit substrate 50.In the present embodiment, the both ends of the optical fiber 60 pass through respectively
Viscose glue is fixed on optical fiber receiving groove 105 and 105a, naturally it is also possible to select other fixed forms, however it is not limited to this implementation
Example.
It should be noted that laser diode epitaxy of embodiment of the present invention module 100 and photodiode epitaxy module 200
It is both needed to form electrode structure when in use.
Compared with the existing technology, 100 He of laser diode epitaxy module in the optical interconnection device 300 of the embodiment of the present invention
Photodiode epitaxy module 200 combines optical waveguide, and has opened up optical fiber in basal layer 10 and accommodated groove 105, is using
When, only laser diode epitaxy module 100 and photodiode epitaxy module 200 need to be fixedly connected on circuit board and connected
Optical fiber, without carrying out multiple modularity encapsulation, simple in structure and volume smaller is conducive to the miniaturization of photovoltaic.
In addition, those skilled in the art can also be in doing other variations, for designs such as the present invention, only in spirit of that invention
Want it without departing from the technique effect of the present invention.These variations that spirit is done according to the present invention, should all be included in the present invention
Within the scope of claimed.
Claims (3)
1. a kind of optical interconnection device, including：
Laser diode epitaxy module, including：
First semiconductor base layer, it includes the first epitaxial layer life being disposed adjacent successively to have a first surface, the first surface
Long area, the first optical waveguide fixed area and the first intelligent acess area, the first intelligent acess area offer the first optical fiber receiving groove,
The extending direction of first optical fiber receiving groove is directed toward the first optical waveguide fixed area；
Laser diode epitaxial layer, is formed in the first outer layer growth area, which includes being somebody's turn to do along separate
N-type buffer layer, the first n type semiconductor layer, the first multiple quantum trap structure sheaf and the first p-type that first surface is arranged in order partly are led
Body layer；And
First optical waveguide is formed in the first optical waveguide fixed area, the first optical waveguide wherein one side and first weight
Sub- well construction layer one side is opposite；
Photodiode epitaxy module, including：
Second semiconductor base layer, it includes the second epitaxial layer life being disposed adjacent successively to have a second surface, the second surface
Long area, the second optical waveguide fixed area and the second intelligent acess area, the second intelligent acess area offer the second optical fiber receiving groove,
The extending direction of second optical fiber receiving groove is directed toward the second optical waveguide fixed area；
Photodiode epitaxial layer, is formed in the second outer layer growth area, which includes being somebody's turn to do along separate
P-type buffer layer, the second p type semiconductor layer, the second multiple quantum trap structure sheaf and the second p-type that second surface is arranged in order partly are led
Body layer；And
Second optical waveguide is formed in the second optical waveguide fixed area, the second optical waveguide wherein one side and second weight
Sub- well construction layer one side is opposite；And
One end of optical fiber, the optical fiber is contained in the first optical fiber container and end face and the first optical waveguide face, the other end are received
It is dissolved in the second optical fiber container and end face and the second optical waveguide face.
2. optical interconnection device as described in claim 1, which is characterized in that the optical interconnection device further comprises the first circuit base
Plate and second circuit substrate, are respectively provided with conducting wire, which fixes and be electrically connected to first electricity
Base board, the photodiode epitaxy module are fixed and are electrically connected to the second circuit substrate.
3. optical interconnection device as described in claim 1, which is characterized in that it is V-groove that the optical fiber, which accommodates groove,.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711122228.8A CN107748417B (en) | 2013-04-12 | 2013-04-12 | Manufacturing method of diode module |
| CN201711122199.5A CN107731976A (en) | 2013-04-12 | 2013-04-12 | Diode modules |
| CN201310126774.4A CN104103725B (en) | 2013-04-12 | 2013-04-12 | Diode modules and its production method and optical interconnection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310126774.4A CN104103725B (en) | 2013-04-12 | 2013-04-12 | Diode modules and its production method and optical interconnection device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711122199.5A Division CN107731976A (en) | 2013-04-12 | 2013-04-12 | Diode modules |
| CN201711122228.8A Division CN107748417B (en) | 2013-04-12 | 2013-04-12 | Manufacturing method of diode module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104103725A CN104103725A (en) | 2014-10-15 |
| CN104103725B true CN104103725B (en) | 2018-07-27 |
Family
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Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310126774.4A Expired - Fee Related CN104103725B (en) | 2013-04-12 | 2013-04-12 | Diode modules and its production method and optical interconnection device |
| CN201711122228.8A Active CN107748417B (en) | 2013-04-12 | 2013-04-12 | Manufacturing method of diode module |
| CN201711122199.5A Pending CN107731976A (en) | 2013-04-12 | 2013-04-12 | Diode modules |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711122228.8A Active CN107748417B (en) | 2013-04-12 | 2013-04-12 | Manufacturing method of diode module |
| CN201711122199.5A Pending CN107731976A (en) | 2013-04-12 | 2013-04-12 | Diode modules |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN104103725B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860354B (en) * | 2018-12-28 | 2020-05-19 | 南京邮电大学 | Homogeneous integrated infrared photon chip and preparation method thereof |
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| US5796118A (en) * | 1996-01-25 | 1998-08-18 | Nec Corporation | Photodetection semiconductor device |
| JP2000347050A (en) * | 1999-06-03 | 2000-12-15 | Nhk Spring Co Ltd | Optical transmitting/receiving module |
| CN1375070A (en) * | 1999-07-16 | 2002-10-16 | 混合微技术有限公司 | Hybrid integration of active and passive optical components on an si-board |
| CN1388906A (en) * | 2000-08-17 | 2003-01-01 | 松下电器产业株式会社 | Optical mounting board, optical module, optical transmitter/receiver, optical transmitting/receiving system, and method for manufacturing optical mounting board |
| CN1423145A (en) * | 2001-12-04 | 2003-06-11 | 松下电器产业株式会社 | Optical mounting substrate and optical device |
| CN103376514A (en) * | 2012-04-20 | 2013-10-30 | 鸿富锦精密工业（深圳）有限公司 | Optical fiber connector |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2546506B2 (en) * | 1993-07-27 | 1996-10-23 | 日本電気株式会社 | Coupling structure of optical semiconductor device and optical waveguide and its coupling method |
| JPH07218772A (en) * | 1994-01-27 | 1995-08-18 | Hitachi Ltd | Semiconductor optical moidule |
| JP3767156B2 (en) * | 1998-02-23 | 2006-04-19 | 住友電気工業株式会社 | Optical transceiver module |
| US6786651B2 (en) * | 2001-03-22 | 2004-09-07 | Primarion, Inc. | Optical interconnect structure, system and transceiver including the structure, and method of forming the same |
| US7657136B2 (en) * | 2004-09-29 | 2010-02-02 | Hitachi Chemical Co., Ltd. | Optoelectronic integrated circuit device and communications equipment using same |
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2013
- 2013-04-12 CN CN201310126774.4A patent/CN104103725B/en not_active Expired - Fee Related
- 2013-04-12 CN CN201711122228.8A patent/CN107748417B/en active Active
- 2013-04-12 CN CN201711122199.5A patent/CN107731976A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5796118A (en) * | 1996-01-25 | 1998-08-18 | Nec Corporation | Photodetection semiconductor device |
| JP2000347050A (en) * | 1999-06-03 | 2000-12-15 | Nhk Spring Co Ltd | Optical transmitting/receiving module |
| CN1375070A (en) * | 1999-07-16 | 2002-10-16 | 混合微技术有限公司 | Hybrid integration of active and passive optical components on an si-board |
| CN1388906A (en) * | 2000-08-17 | 2003-01-01 | 松下电器产业株式会社 | Optical mounting board, optical module, optical transmitter/receiver, optical transmitting/receiving system, and method for manufacturing optical mounting board |
| CN1423145A (en) * | 2001-12-04 | 2003-06-11 | 松下电器产业株式会社 | Optical mounting substrate and optical device |
| CN103376514A (en) * | 2012-04-20 | 2013-10-30 | 鸿富锦精密工业（深圳）有限公司 | Optical fiber connector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104103725A (en) | 2014-10-15 |
| CN107748417A (en) | 2018-03-02 |
| CN107748417B (en) | 2020-04-21 |
| CN107731976A (en) | 2018-02-23 |
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