CN104094414B - 太阳能电池模块及其制造方法 - Google Patents

太阳能电池模块及其制造方法 Download PDF

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CN104094414B
CN104094414B CN201280069020.3A CN201280069020A CN104094414B CN 104094414 B CN104094414 B CN 104094414B CN 201280069020 A CN201280069020 A CN 201280069020A CN 104094414 B CN104094414 B CN 104094414B
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池奭宰
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Abstract

公开了一种太阳能电池模块及其制造方法。所述太阳能电池模块包括:背电极层,布置在支撑基板上,并且具有第一分离图案;光吸收层,布置在所述背电极层上并且具有第二分离图案;以及,多个太阳能电池,布置在所述光吸收层上,并且形成为具有包括绝缘体的前电极层。

Description

太阳能电池模块及其制造方法
技术领域
实施例涉及太阳能电池模块及其制造方法。
背景技术
可以将太阳能电池定义为用于通过使用当光入射在P-N结二极管上时产生电子的光生伏打效应来将光能转换为电能的装置。太阳能电池可以根据构成面结型二极管的材料被分类为:硅太阳能电池;化合物半导体太阳能电池,其主要包括I-III-VI族化合物或III-V族化合物;染料敏化太阳能电池;以及,有机太阳能电池。
由作为基于I-III-VI族黄铜矿的化合物半导体之一的CIGS(CuInGaSe)构成的太阳能电池表现出优越的光吸收性,使用较薄的厚度的较高的光电转换效率和优越的电光稳定性,因此作为传统的硅太阳能电池的替代品,CIGS太阳能电池备受关注。
参见图1,通过依序形成包括钠(Na)的基板10、背电极层20、光吸收层30、缓冲层40、高电阻缓冲层50和前电极层60来制造普通的CIGS薄膜太阳能电池。与大的太阳能电池不同,CIGS薄膜太阳能电池定义为通过P1至P3的图案化处理彼此串联或并联的多个太阳能电池单元。在图案化处理P1至P3期间不可避免地产生非活动区域G1和非活动区域G2,由此减少太阳能电池模块的光输出。
在它们中,进行P3图案化处理是为了分离多个太阳能电池模块C1、C2和C3。根据现有技术,使用划线端头(针)机械地去除层。然而,这样的方案因为层撕裂而难以控制线宽,使得难以精确的图案化。另外,需要用于分离在处理期间产生的残余材料的抽吸装置或清洗装置。
发明内容
技术问题
实施例提供了包括通过精确的激光方案分离的多个太阳能电池的太阳能电池模块及其制造方法。
技术方案
根据实施例,提供了一种太阳能电池模块,包括:背电极层,布置在支撑基板上,并且具有第一分离图案;光吸收层,布置在所述背电极层上,并且具有第二分离图案;以及,多个太阳能电池,布置在所述光吸收层上,并且形成为具有包括绝缘体的前电极层。
根据实施例,提供了一种制造太阳能电池模块的方法,所述方法包括:在基板上形成具有第一分离图案的背电极层;在所述背电极层上形成具有第二分离图案的光吸收层;以及,在所述光吸收层上形成具有绝缘体的前电极层。
有益效果
根据实施例的太阳能电池模块,通过向前电极层的预定区域辐照激光来将前电极层的一部分转换为绝缘体。可以通过转换的绝缘体来将构成太阳能电池模块的太阳能电池彼此分离。
即,根据实施例的制造太阳能电池模块的方法通过激光辐照方案来将太阳能电池彼此分离,而不是通过根据现有技术的机械方案。因此,在根据实施例的制造太阳能电池模块的方法中,可以精确地控制线宽。另外,因为未产生副产品,所以不需要另外的清洗设备。
附图说明
图1是示出根据现有技术的太阳能电池模块的截面的截面图;以及
图2至6是示出根据实施例的制造太阳能电池模块的方法的截面图。
具体实施方式
在实施例的描述中,可以明白,当基板、层、薄膜或电极被称为在另一个基板、另一个层、另一个薄膜或另一个电极“上”或“下”时,它可以“直接地”或“间接地”在该另一个基板、另一个层、另一个薄膜或另一个电极上,或者也可以存在一个或多个介入层。已经参考附图描述了层的这样的位置。在附图中所示的元件的大小可能被夸大以用于解释的目的,并且可能不完全反映实际大小。
图2至图6是示出根据实施例的太阳能电池的制造方法的截面图。以下,将参照图2至图6来描述根据实施例的太阳能电池模块及其制造方法。
参见图2,在支撑基板100上形成背电极层200。通过物理气相沉积(PVD)方案或电镀方案来形成背电极层200。
支撑基板100具有板状,并且支撑背电极层200、光吸收层300、缓冲层400、高电阻缓冲层500、前电极层600和绝缘体700。
支撑基板100可以包括绝缘体。例如,支撑基板100可以包括玻璃基板、塑料基板或金属基板。更详细地,支撑基板100可以包括钠钙玻璃基板。支撑基板100可以是透明的。支撑基板100可以是刚性的或柔性的。
背电极层200是导电层。背电极层200可以包括选自由钼(Mo),金(Au),铝(Al),铬(Cr),钨(W)和铜(Cu)组成的组的一种。背电极层200可以包括Mo。Mo具有与支撑基板100相近的热膨胀系数,因此,Mo可以改善粘结属性,并且防止背电极层200从支撑基板100剥落,并且完全满足背电极层200所需的特性。
背电极层200包括第一分离图案P1。第一分离图案P1是暴露支撑基板100的顶表面的敞开区域。可以通过激光形成第一分离图案P1,但是实施例不限于此。
背电极层200可以被第一分离图案P1分离为多个背电极。第一分离图案P1可以具有在约50μm至约100μm的范围内的宽度,但是实施例不限于此。
参见图4,在背电极层200上依序形成光吸收层300、缓冲层400和高电阻缓冲层500。
光吸收层300被设置在背电极层200上。光吸收层300包括I-III-VI族化合物。例如,光吸收层300可以具有CIGSS(Cu(IN,Ga)(Se,S)2)晶体结构、CISS(Cu(IN)(Se,S)2)晶体结构或CGSS(Cu(Ga)(Se,S)2)晶体结构。光吸收层300的带隙能量可以在约1.0eV至约1.8eV的范围内。
可以通过溅射方案或蒸发方案来形成光吸收层300。可以各种方案来形成光吸收层300,例如通过同时或分别地蒸发Cu、In、Ga和Se来形成Cu(In,Ga)Se2(CIGS)基光吸收层500的方案,以及在形成金属前体层后执行硒化工艺的方案。
至于在形成金属前体层后的硒化工艺的细节,通过使用Cu靶、In靶或Ga靶溅射工艺来在背电极层200上形成金属前体层。
另外,可以同时执行使用Cu靶、In靶或Ga靶的溅射工艺和硒化工艺。
而且,可以通过仅使用Cu靶和In靶或仅使用Cu靶和Ga靶的溅射工艺和硒化工艺来形成CIS基或CIG基的光吸收层300。
缓冲层400设置在光吸收层300上。根据该太阳能电池,CIGS化合物P-N结形成在用作P型半导体的CIGS或CIGSS化合物薄膜的光吸收层300和用作N型半导体的前电极层600之间。然而,因为两种材料之间在晶格常数和带隙能量上表现出巨大的差别,所以需要在这两种材料之间形成具有这两种材料的带隙能量之间的带隙的能量的缓冲层来在这两种材料之间形成较好的连接。
例如,缓冲层400可以包括硫化锌(ZnS)。缓冲层400可以具有在约10nm至约30nm的范围内的厚度,但是实施例不限于此。
可以通过原子层沉积(ALD)、有机金属化学气相沉积(MOCVD)方案或化学浴沉积(CBD)方案来形成缓冲层400。详细而言,可以通过CBD方案来形成缓冲层400。
在缓冲层400上布置了高电阻缓冲层500。高电阻缓冲层500可以包括未掺杂杂质的氧化锌i-ZnO。可以通过在缓冲层400上沉积氧化锌的溅射工艺在来形成高电阻缓冲层500。
参见图4,通过光吸收层300来形成第二分离图案P2。可以通过机械方案,例如,通过使用划线端头机械地划刻光吸收层300来形成第二分离图案P2。
详细而言,第二分离图案P2穿透高电阻缓冲层500、缓冲层400和光吸收层300。第二分离图案P2形成为与第一穿透凹槽P1相邻地形成。即,当在平视图中观看时,第二分离图案P2的一部分形成在第一分离图案P1侧面。第二分离图案P2可以具有在约40μm至约150μm的范围内的宽度,但是实施例不限于此。
参见图5,在高电阻缓冲层500上形成前电极层600。可以通过在高电阻缓冲层500上层叠透明导电材料来制备前电极层600。例如,该透明导电材料可以包括氧化锌、氧化铟锡(ITO)或氧化铟锌(IZO)。详细而言,可以通过掺杂Al的氧化锌(AZO)来制备前电极层600。
更详细地,可以通过溅射方案或化学气相沉积(CVD)方案来制备前电极层600。更详细地,可以通过使用ZnO靶的RF溅射方案和使用Zn靶的反应溅射方案来形成前电极层600。
参见图5和图6,在前电极层600的预定区域处形成绝缘体700。700将根据实施例的太阳能电池模块可以被绝缘体划分为多个太阳能电池C1、C2和C3。
可以通过向前电极层600的预定区域辐照激光束来形成绝缘体700。主要用于前电极层600的AZO(掺杂Al的氧化锌)具有在约250℃或更高温度的高温下失去导电性的特性。基于上述特性,根据实施例的太阳能电池模块的制造方法通过向前电极层600的部分区域辐照激光束来将前电极层600的一部分转换为绝缘体700。
在根据实施例的太阳能电池模块的制造方法中,精确地控制线宽,使得可以实现精确的图案化。根据实施例的太阳能电池模块的制造方法不使用根据现有技术的机械方案来划分太阳能电池。因此,不形成使用该机械方案产生的副产品,使得另外的抽吸设备或清洗设备变得不必要。
用于激光辐照方案的激光束可以具有在约250nm至400nm的范围内的波长。当激光束的波长小于250nm时,可能未充分地表现出绝缘体700的绝缘特征。当激光束的波长超过400nm时,激光束可以透过前电极层600。为了消除前电极层600的导电性,可以使用具有在约20μm至约60μm的范围内的光斑大小和在0.5J/cm2至5J/cm2的范围内的功率密度的激光束,但是实施例不限于此。
通过上述方案使用与前电极层600的材料相同的材料形成绝缘体700。前电极层600和绝缘体700均可以由掺杂了铝的氧化锌形成(ZnO:Al)。
绝缘体700中铝的掺杂浓度可以与前电极层600中铝的掺杂浓度不同。详细而言,绝缘体700中铝的掺杂浓度可以小于前电极层600中铝的掺杂浓度。例如,绝缘体700掺杂了少量的铝,或者未掺杂铝。因此,绝缘体70失去了前电极层600的固有导电性。
可以将绝缘体70布置为与第二分离图案P2相邻。即,当在平视图中观看时,绝缘体700形成在第二分离图案P2旁边。绝缘体700可以具有在约10μm至约200μm的范围内的宽度,但是实施例不限于此。
作为一个示例实施例,第二分离图案P2的一侧与绝缘体700的另一侧可以在同一延长线上对齐。即,第二分离图案P2和绝缘体700可以不形成图1中所示出的区域G2。这是因为根据实施例的太阳能电池的制造方法可以通过调整激光束的光班大小来精细地控制线宽。因此,可以减小所制造的太阳能电池模块中非活动区域(死区),使得可以增大太阳能电池模块的光学输出。
在本说明书中对于“一个实施例”、“实施例”、“示例实施例”等的任何引用表示在本发明的至少一个实施例中包括结合实施例描述的特定特征、结构或特性。在本说明书中的各个位置中的这样的短语的出现不必然全部指的是同一实施例。而且,当结合任何实施例描述特定特征、结构或特性时,认为它在本领域内的技术人员实现与实施例的其它一些相关的这样的特征、结构或特性的范围内。
虽然已经参考其多个说明性实施例而描述了实施例,但是应当明白,本领域内的技术人员可以设计落在本公开的精神和原理范围内的多种其它修改和实施例。更具体地,在本公开、附图和所附的权利要求的范围内的主组合布置的部件部分和/或布置中,各种改变和修改是可能的。除了在部件部分和/或布置中的改变和修改之外,替代使用也对于本领域内的技术人员是显然的。

Claims (8)

1.一种太阳能电池模块,包括:
背电极层,布置在支撑基板上,并且具有第一分离图案;
光吸收层,布置在所述背电极层上,并且具有第二分离图案;以及
前电极层,布置在所述光吸收层上,并且包括绝缘体,
其中,所述前电极层由掺杂了铝的氧化锌形成,并且通过向所述前电极层的预定区域辐照激光来形成所述绝缘体,
其中,所述绝缘体中铝的掺杂浓度不同于所述前电极层中铝的掺杂浓度。
2.根据权利要求1所述的太阳能电池模块,其中,所述绝缘体中铝的掺杂浓度小于所述前电极层中铝的掺杂浓度。
3.根据权利要求1所述的太阳能电池模块,其中,通过多个绝缘体来限定所述太阳能电池。
4.根据权利要求1所述的太阳能电池模块,其中,所述绝缘体被布置为与所述第二分离图案相邻。
5.根据权利要求1所述的太阳能电池模块,其中,所述绝缘体具有在10μm至200μm的范围内的宽度。
6.根据权利要求4所述的太阳能电池模块,其中,所述第二分离图案的一侧与所述绝缘体的一侧在同一延长线上对齐。
7.一种制造太阳能电池模块的方法,所述方法包括:
在基板上形成具有第一分离图案的背电极层;
在所述背电极层上形成具有第二分离图案的光吸收层;
在所述光吸收层上使用掺杂铝的氧化锌形成前电极层;以及
通过向所述前电极层的预定区域辐照激光束来形成绝缘体,
其中,所述绝缘体中铝的掺杂浓度不同于所述前电极层中铝的掺杂浓度。
8.根据权利要求7所述的方法,其中,所述激光束的波长在250nm至400nm的范围内,所述激光束的光斑大小在20μm至60μm的范围内,并且所述激光束的功率密度在0.5J/cm2至5J/cm2的范围内。
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