CN104091901A - OLED preparation method - Google Patents
OLED preparation method Download PDFInfo
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- CN104091901A CN104091901A CN201410288714.7A CN201410288714A CN104091901A CN 104091901 A CN104091901 A CN 104091901A CN 201410288714 A CN201410288714 A CN 201410288714A CN 104091901 A CN104091901 A CN 104091901A
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- organic film
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- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- 230000007547 defect Effects 0.000 claims abstract description 112
- 239000011368 organic material Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000008439 repair process Effects 0.000 claims abstract description 37
- 239000002245 particle Substances 0.000 claims abstract description 31
- 238000001704 evaporation Methods 0.000 claims description 35
- 230000008020 evaporation Effects 0.000 claims description 35
- 238000005516 engineering process Methods 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000002699 waste material Substances 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 60
- 238000010586 diagram Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009418 renovation Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
Abstract
The invention relates to the technical field of display, and discloses an OLED preparation method. The OLED preparation method comprises steps as follows: multiple layers of organic films are evaporated sequentially, wherein particle defect information on a substrate is detected after one layer of organic film is evaporated and before a next layer of organic film is evaporated; and a particle defect is repaired by a defect repair process when detected. According to the OLED preparation method, a process link of detecting particle defect information on the substrate after one layer of organic film is evaporated and before a next layer of organic film is evaporated is added, the particle defect is immediately repaired when detected and can be found and repaired timely in the forming process of the multiple layers of organic films, so that the waste of organic materials is reduced.
Description
Technical field
The present invention relates to Display Technique field, particularly a kind of OLED preparation method.
Background technology
At present, the hole injection layer (HIL) of color OLED display device pixel region, hole transmission layer (HTL), luminescent layer (EML), electron transfer layer (ETL), negative electrode (Cathode) etc. are all to adopt vacuum evaporation process to carry out film forming.Although before evaporation, can first vacuumize evaporation cavity, still cannot realize 100% cleaning of evaporation cavity.In evaporate process, if there is particle (Particle) to fall on organic film, just there will be defect.Due to the existence of particle, may cause the generation of short-circuit conditions, and cause the appearance of stain, make life-span and the Efficiency Decreasing of device; And, due to the existence of particle, make follow-up evaporated film occur protrusion, there is point discharge phenomenon, cause device lifetime and Efficiency Decreasing.
In the preparation process of existing display device, in the vacuum evaporation process of every one deck organic material, do not detect the problem that whether has grain defect.Therefore, only occur when bad, to find grain defect by bad analysis at OLED display device.But, at this moment particle has been deeply buried in film inside, cannot repair it again, can only wash evaporation to the organic film on glass substrate by cleaning fluid, re-start the vacuum evaporation process of organic material, this restorative procedure can cause the waste of organic material.
Summary of the invention
The invention provides a kind of OLED preparation method, this kind of OLED preparation method can avoid the waste of organic material.
For achieving the above object, the invention provides following technical scheme:
A kind of OLED preparation method, comprises the following steps:
Evaporation multilayer organic film successively, wherein:
After evaporation one deck organic film and carry out under evaporation, before one deck organic film, comprising:
Detect the grain defect information on substrate;
In the time detecting that grain defect exists, repair described grain defect by defect repair technique.
Above OLED preparation method, after evaporation one deck organic film and carry out under evaporation before one deck organic film, increase the process procedure that detects the grain defect information on substrate, in the time detecting that grain defect exists, repair immediately, can in the forming process of multilayer organic film, find in time and repair grain defect, thereby reduce the waste of organic material.
In preferred embodiment,
In the time that the particle at grain defect place is positioned at organic film surperficial, described defect repair technique is to adopt laser technology to remove the particle in described grain defect;
In the time that the particulate fraction at grain defect place embeds organic film, described defect repair technique is:
Adopt laser technology to remove the particle in described grain defect;
By grinding, organic film is had an even surface;
Or described defect repair technique is:
Adopt laser technology to remove the particle in described grain defect;
Splash into the organic material of fusing at grain defect place, and make the organic material of fusing cooling;
By grinding, organic film is had an even surface;
In the time that the particle at grain defect place all embeds organic film, described defect repair technique is:
Adopt laser technology to remove the particle in described grain defect;
Splash into the organic material of fusing at grain defect place, and make the organic material of fusing cooling;
By grinding, organic film is had an even surface.
In preferred embodiment, in the time being included in grain defect place in described defect repair technique and splashing into the organic material of fusing, described splash into organic material in the organic material of fusing at grain defect place identical with the material of the organic film of evaporation.
In preferred embodiment, in the time being included in fault location in described grain defect renovation technique and splashing into the organic material of fusing, the described organic material that splashes into fusing at grain defect place, specifically comprises:
Move to top, grain defect region by microscopic examination and by nozzle, then splash into the organic material of fusing.
In preferred embodiment, when described defect repair technique comprises while organic film being had an even surface by grinding, describedly by grinding, organic film is had an even surface, specifically comprises:
, then organic material is ground until organic film has an even surface to grain defect region by microscopic examination mobile grinding head.
In preferred embodiment, the grain defect information on described detection substrate, specifically comprises:
By microscope, substrate is observed, determined the grain defect information on substrate.
In preferred embodiment, before the described multilayer of evaporation successively organic film, also comprise step:
Underlay substrate is cleaned and plasma treatment.
In preferred embodiment, after the described multilayer of evaporation successively organic film, also comprise step:
Detect the grain defect information on substrate;
In the time detecting that grain defect exists, repair described grain defect by defect repair technique.
In preferred embodiment, at the described multilayer organic film of evaporation successively and after detecting the grain defect information on substrate, also comprise step:
Form metallic cathode layer, and form metallic cathode figure by composition technique;
On metallic cathode layer, form light removing layer;
Base plate for packaging.
Brief description of the drawings
A kind of OLED preparation method flow chart that Fig. 1 provides for the embodiment of the present invention;
In a kind of OLED preparation method that Fig. 2 a provides for the embodiment of the present invention, particle is positioned at the board structure schematic diagram on organic film surface;
In a kind of OLED preparation method that Fig. 2 b provides for the embodiment of the present invention, adopt laser technology to remove the board structure schematic diagram after particle;
In the another kind of OLED preparation method that Fig. 3 a provides for the embodiment of the present invention, particulate fraction embeds the board structure schematic diagram on organic film surface;
In the another kind of OLED preparation method that Fig. 3 b provides for the embodiment of the present invention, adopt laser technology to remove the board structure schematic diagram after particle;
In the another kind of OLED preparation method that Fig. 3 c provides for the embodiment of the present invention, splash into the board structure schematic diagram after the organic material of fusing;
Board structure schematic diagram in the another kind of OLED preparation method that Fig. 3 d provides for the embodiment of the present invention after grinding;
In the another kind of OLED preparation method that Fig. 4 a provides for the embodiment of the present invention, particle all embeds the board structure schematic diagram of organic film inside;
In the another kind of OLED preparation method that Fig. 4 b provides for the embodiment of the present invention, adopt laser technology to remove the board structure schematic diagram after particle;
In the another kind of OLED preparation method that Fig. 4 c provides for the embodiment of the present invention, splash into the board structure schematic diagram after the organic material of fusing;
Board structure schematic diagram in the another kind of OLED preparation method that Fig. 4 d provides for the embodiment of the present invention after grinding.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Please refer to Fig. 1, Fig. 2 a and Fig. 2 b.
As shown in Figure 1, the OLED preparation method that the embodiment of the present invention provides, comprises the following steps:
Evaporation multilayer organic film successively, wherein:
Taking the step S101 shown in Fig. 1 and step S104 as example, step S101 and step S104 are evaporation one deck organic film, carry out under evaporation, before one deck organic film, comprising in step S101 after evaporation one deck organic film and in step S104:
Step S102, detects the grain defect information on substrate;
Step S103, in the time detecting that grain defect exists, repairs grain defect by defect repair technique.
As shown in Figure 2 a and 2 b, in step S101, after evaporation organic film 12 and in step S104, carry out under evaporation before one deck organic film, step S102, detect grain defect 13 information on substrate, step S103, in the time detecting that grain defect 13 exists, repair grain defect 13 by defect repair technique.
Above OLED preparation method, in step S101, after evaporation one deck organic film 12 and in step S104, carry out under evaporation before one deck organic film, increase step S102 to detect grain defect 13 information on substrate, while there is not grain defect 13 on substrate after having carried out step S101, directly carry out step S104 and carry out the evaporation of lower one deck organic film; When step S102 detects that while there is grain defect 13 on substrate, execution step S103 repairs grain defect 13.
So, in above-mentioned OLED preparation method, can in the forming process of multilayer organic film, find in time and repair grain defect 13, for above-mentioned background technology, evaporation organic film can be reduced again and the generation of phenomenon could be repaired to OLED, thus the waste of minimizing organic material.
Below please refer to Fig. 1, Fig. 2 a, Fig. 2 b, Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 3 d, Fig. 4 a, Fig. 4 b, Fig. 4 c, Fig. 4 d.
As Fig. 1, Fig. 2 a, Fig. 2 b, Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 3 d, Fig. 4 a, Fig. 4 b, Fig. 4 c, shown in Fig. 4 d.
In a kind of specific embodiment, step S103 has following several execution mode:
Mode one, observes by high-power microscope, in the time that the particle at grain defect 13 places is positioned at organic film 12 surperficial, as shown in Figure 2 a, the defect repair technique in step S103, for directly utilizing laser to destroy particle, has an even surface organic film 12, reparation completes, as shown in Figure 2 b.Wherein, organic film 12 can directly be arranged on underlay substrate 11, and underlay substrate 11 can be selected the transparent materials such as glass, quartz, sapphire, plastics; Or organic film 12 can be arranged on underlay substrate 11 indirectly, can also form other structure rete between organic film 12 and underlay substrate 11, the present invention does not limit.
Mode two, observes by high-power microscope, in the time that the particulate fraction at grain defect 23 places embeds organic film 22, as shown in Figure 3 a, the defect repair technique in step S103 is: first utilize laser to destroy particle, now, grain defect 23 places there will be groove 231, as shown in Figure 3 b; If the groove 231 that grain defect 23 places occur is very shallow, directly by grinding, organic film 22 is had an even surface, complete reparation; If the groove 231 that grain defect 23 places occur is very dark, first in the groove 231 at grain defect 23 places, splash into the organic material of fusing, as shown in Figure 3 c, this organic material and evaporation organic material used is same substance; Then, after organic material is cooling, grind again, organic film 22 is had an even surface, complete reparation, as shown in Figure 3 d.Wherein, organic film 22 can directly be arranged on underlay substrate 21, and underlay substrate 21 can be selected the transparent materials such as glass, quartz, sapphire, plastics; Or organic film 22 can be arranged on underlay substrate 21 indirectly, can also form other structure rete between organic film 22 and underlay substrate 21, the present invention does not limit.
Mode three, observe by high-power microscope, in the time that the particle at grain defect 33 places all embeds organic film 32, as shown in Fig. 4 a, defect repair technique in step S103 is: first utilize laser to destroy particle, now, at grain defect, 33 places there will be very dark groove 331, as shown in Figure 4 b; Then in the groove 331 at grain defect 33 places, splash into the organic material of fusing, as shown in Fig. 4 c, this organic material and evaporation organic material used is same substance; After organic material is cooling, grind again, organic film 32 is had an even surface, complete reparation, as shown in Fig. 4 d.Wherein, organic film 32 can directly be arranged on underlay substrate 31, and underlay substrate 31 can be selected the transparent materials such as glass, quartz, sapphire, plastics; Or organic film 32 can be arranged on underlay substrate 31 indirectly, can also form other structure rete between organic film 32 and underlay substrate 31, the present invention does not limit.
On the mode two of above-described embodiment or the basis of mode three, in a kind of specific embodiment, in the defect repair technique of step S103, the organic material detailed process that splashes into fusing at grain defect place is: aim at camera lens by high-power microscope and observe and nozzle is moved to above grain defect region, then splash into the organic material of fusing.In the mode three in above-described embodiment as example, as Fig. 3 b, aim at camera lens observation and nozzle is moved to grain defect 33 tops, regions by high-power microscope, then splash into the organic material of fusing.
On the basis of above-described embodiment, in a kind of specific embodiment, by grinding, organic film is had an even surface, detailed process is:
By high-power microscope aim at camera lens observe and mobile grinding head to grain defect region, then organic material is ground until organic film has an even surface.In the mode three in above-described embodiment as example, as Fig. 3 c, by high-power microscope aim at camera lens observe and mobile grinding head to grain defect 33 regions, then organic material is ground until organic film 32 has an even surface.
On the basis of the various embodiments described above, in a kind of specific embodiment, before evaporation multilayer organic film successively, also comprise step: underlay substrate is cleaned and plasma treatment.Underlay substrate is not also being carried out before any one deck organic thin-film vapor deposition, underlay substrate being cleaned and plasma treatment.
On the basis of the various embodiments described above, in a kind of specific embodiment, after evaporation multilayer organic film successively, also comprise step:
Detect the grain defect information on substrate;
In the time detecting that grain defect exists, repair grain defect by defect repair technique.
On the basis of above-described embodiment, in a kind of specific embodiment, at evaporation multilayer organic film successively and after detecting the grain defect information on substrate, also comprise step:
Form metallic cathode layer, and form metallic cathode figure by composition technique;
On metallic cathode layer, form light removing layer;
Base plate for packaging.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the embodiment of the present invention.Like this, if these amendments of the present invention and within modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (9)
1. an OLED preparation method, is characterized in that, comprises the following steps:
Evaporation multilayer organic film successively, wherein:
After evaporation one deck organic film and carry out under evaporation, before one deck organic film, comprising:
Detect the grain defect information on substrate;
In the time detecting that grain defect exists, repair described grain defect by defect repair technique.
2. OLED preparation method according to claim 1, is characterized in that,
In the time that the particle at grain defect place is positioned at organic film surperficial, described defect repair technique is to adopt laser technology to remove the particle in described grain defect;
In the time that the particulate fraction at grain defect place embeds organic film, described defect repair technique is:
Adopt laser technology to remove the particle in described grain defect;
By grinding, organic film is had an even surface;
Or described defect repair technique is:
Adopt laser technology to remove the particle in described grain defect;
Splash into the organic material of fusing at grain defect place, and make the organic material of fusing cooling;
By grinding, organic film is had an even surface;
In the time that the particle at grain defect place all embeds organic film, described defect repair technique is:
Adopt laser technology to remove the particle in described grain defect;
Splash into the organic material of fusing at grain defect place, and make the organic material of fusing cooling;
By grinding, organic film is had an even surface.
3. OLED preparation method according to claim 2, it is characterized in that, in the time being included in grain defect place in described defect repair technique and splashing into the organic material of fusing, described splash into organic material in the organic material of fusing at grain defect place identical with the material of evaporation organic film.
4. OLED preparation method according to claim 2, is characterized in that, in the time being included in grain defect place in described defect repair technique and splashing into the organic material of fusing, the described organic material that splashes into fusing at grain defect place, specifically comprises:
Move to top, grain defect region by microscopic examination and by nozzle, then splash into the organic material of fusing.
5. OLED preparation method according to claim 2, is characterized in that, when described defect repair technique comprises while organic film being had an even surface by grinding, describedly by grinding, organic film is had an even surface, and specifically comprises:
, then organic material is ground until organic film has an even surface to defect area by microscopic examination mobile grinding head.
6. OLED preparation method according to claim 1, is characterized in that, the grain defect information on described detection substrate, specifically comprises:
By microscope, substrate is observed, determined the grain defect information on substrate.
7. according to the OLED preparation method described in claim 1～6 any one, it is characterized in that, before the described multilayer of evaporation successively organic film, also comprise step:
Underlay substrate is cleaned and plasma treatment.
8. according to the OLED preparation method described in claim 1～6 any one, it is characterized in that, after the described multilayer of evaporation successively organic film, also comprise step:
Detect the grain defect information on substrate;
In the time detecting that grain defect exists, repair described grain defect by defect repair technique.
9. OLED preparation method according to claim 8, is characterized in that, at the described multilayer organic film of evaporation successively and after detecting the grain defect information on substrate, also comprises step:
Form metallic cathode layer, and form metallic cathode figure by composition technique;
On metallic cathode layer, form light removing layer;
Base plate for packaging.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410288714.7A CN104091901A (en) | 2014-06-24 | 2014-06-24 | OLED preparation method |
| PCT/CN2014/087905 WO2015196612A1 (en) | 2014-06-24 | 2014-09-30 | Oled preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410288714.7A CN104091901A (en) | 2014-06-24 | 2014-06-24 | OLED preparation method |
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| Publication Number | Publication Date |
|---|---|
| CN104091901A true CN104091901A (en) | 2014-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410288714.7A Pending CN104091901A (en) | 2014-06-24 | 2014-06-24 | OLED preparation method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104091901A (en) |
| WO (1) | WO2015196612A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110082974A (en) * | 2019-04-08 | 2019-08-02 | 深圳市华星光电技术有限公司 | Array substrate patch system and its method |
| CN111564557A (en) * | 2019-02-13 | 2020-08-21 | 上海和辉光电有限公司 | Flexible substrate, preparation method thereof, display panel and display device |
| CN112018271A (en) * | 2020-08-14 | 2020-12-01 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN112614959A (en) * | 2020-12-16 | 2021-04-06 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN114171422A (en) * | 2022-02-11 | 2022-03-11 | 浙江里阳半导体有限公司 | Method for manufacturing semiconductor device and method for detecting vapor deposition defect thereof |
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| DE102017117282A1 (en) * | 2017-07-31 | 2019-01-31 | Osram Oled Gmbh | OPTOELECTRONIC COMPONENT, METHOD FOR MANUFACTURING THE SAME, AND DEVICE FOR CARRYING OUT THE SAME METHOD |
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| CN111564557A (en) * | 2019-02-13 | 2020-08-21 | 上海和辉光电有限公司 | Flexible substrate, preparation method thereof, display panel and display device |
| CN110082974A (en) * | 2019-04-08 | 2019-08-02 | 深圳市华星光电技术有限公司 | Array substrate patch system and its method |
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| CN112614959B (en) * | 2020-12-16 | 2022-10-04 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN114171422A (en) * | 2022-02-11 | 2022-03-11 | 浙江里阳半导体有限公司 | Method for manufacturing semiconductor device and method for detecting vapor deposition defect thereof |
| CN114171422B (en) * | 2022-02-11 | 2022-06-03 | 浙江里阳半导体有限公司 | Method for manufacturing semiconductor device and method for detecting vapor deposition defect thereof |
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