CN104091845A - ZrS3纳米带薄膜的柔性光探测器 - Google Patents
ZrS3纳米带薄膜的柔性光探测器 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title abstract description 11
- 230000003287 optical effect Effects 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910052737 gold Inorganic materials 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims abstract description 3
- 239000002390 adhesive tape Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 4
- 230000000717 retained effect Effects 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229920002799 BoPET Polymers 0.000 claims 2
- 238000002474 experimental method Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 24
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 9
- 229910052726 zirconium Inorganic materials 0.000 description 9
- 239000003708 ampul Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- -1 polypropylene Polymers 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
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Abstract
本发明通过气运传输法制备ZrS3纳米带薄膜，用胶带粘帖转移法实现该薄膜向柔性基底转移如PP，PET和纸等薄的柔性基底，用简易的掩膜覆盖，然后在薄膜上蒸镀两个导电电极如Ti/Au或Au等，移去掩膜后在ZrS3纳米带薄膜上留下分立的电极即构成简易的从紫外到近红外的光探测器。实验表明性能良好可靠。本发明公开了其材料和该探测器的加工方法。
Description
技术领域
本发明涉及三硫化锆纳米带柔性光探测器的加工。具体地说，用气相传输法在基片上定向生长的ZrS3纳米带薄膜，然后用透明胶带或双面胶带粘帖薄膜并转移到柔性的胶片或纸上，再通过简易掩膜并真空蒸镀金属电极，移去掩膜，使其在两电极之间只留下未被金属覆盖的ZrS3薄膜。
背景技术
一维纳米材料因其量子限域效应而具有的特殊的物理和化学性质而引起了科学界的广泛关注，也由于它的独特的形貌便于纳米器件的加工。ZrS3是一个带有直接光学能隙为2.56eV的p型半导体。它具有假一维的晶体结构，因此表现出各项异性的物理性能。过去我们曾用气运传输法在金属锆的基片上生长ZrS3纳米带阵列，同时将它真空热转化为ZrS2纳米带阵列将并两者都加工成电子场发射器件获得了良好的结果[参见：Y.L.Zhang，X.C.Wu，Y.R.Tao，C.J.Mao，J.J.Zhu，Chem.Commun.2008，26832.]。随后我们用单根ZrS2纳米带加工成场效应晶体管和光探测器发现其可见光的探测性能【参见：L.Li，X.S.Fang，T.Y.Zhai，M.Y.Liao，U.K.Gautam，X.C.Wu，Y.Koide，Y.Bando，D.Golberg，Adv.Mater.2010，22，4151.】。在这里我们发明用胶带粘帖转移法在其他柔性基底如聚丙烯，聚乙烯和纸等加工光传感器件。
发明内容
本发明的目的是提供基于ZrS3纳米带薄膜光探测器及其加工方法。
本发明的技术方案如下：
(1)ZrS3纳米带薄膜的制备：它是将锆片与硫粉按1∶3的摩尔比放入石英管中，抽真空至内剩压10-2Pa以下，将石英管烧密封，把石英管放在水平管式炉中，使样品置于炉子的中间在500-700℃下加热2-10小时，即在锆片表面生长出上述的单斜晶系的ZrS3纳米带薄膜。
(2)ZrS3纳米带薄膜柔性光探测器的器件加工方法：普通的透明的单面胶带或双面带按一定的尺寸剪小并将胶粘面粘贴到上述薄膜上并按压，剥开胶带此时薄膜就转移到胶带上。如保留在单面胶带上此胶带成为基底，保留在双面胶带上另一面的纸做基地，如果预先将双面胶带粘在其它柔性基底上按同样方法转移，形成其他柔性基底的器件。然后在转后的薄膜上放置直径从微米到毫米量级的金属线或其他线作为隔断，并剪一框式掩膜覆盖之。然后真空蒸镀导电材料如Au，Ti/Au，Cr/Au，ITO，Cu，Al等，移去上层膜和金属线，就形成光探测器。整个加工过程如图1所示。
本发明的ZrS3纳米带薄膜柔性光探测器能从紫外到近红外光范围的探测，响应速度快，原料易得，制作简单实用，可以在军事和日用中发挥作用。
附图说明
图1为本发明的ZrS3纳米带薄膜柔性器件的加工过程；
图2为本发明：(a)在锆片上生长的ZrS3纳米带薄膜SEM照片；(b)在聚乙烯(PP)基底实物图；(c)对光的I-V曲线；(d)对光的时间相应；
图3为本发明：(a)纸基底实物图；(b)对光的I-V曲线；(c)对光的时间相应；(d)聚对苯二甲酸乙二酯(PET)基底的实物图；(e)对光的I-V曲线。
具体实施方式
实施例1.ZrS3纳米带薄膜聚乙烯基底器件加工
A.将锆片(2.88mmol，32mm×5mm×0.2mm)与硫粉(0.5769mmol)密封在石英管(Φ6mm×10cm，ca.10-2Pa)中，样品放在石英管的一端。把石英管放在水平的放置的熔炉(furnace tube：Φ5cm×30cm)中，使样品置于炉子的中间，在650℃下加热5小时，冷却，即在锆片上形成了ZrS3纳米带薄膜，纳米带的尺寸宽约0.85微米，厚约70纳米，长约几十微米，结构被XRD证实，形貌被SEM证实(如图2(a))。
B.将上述得到的ZrS3薄膜用单面胶带粘帖转移，并用金属线和框式罩遮蔽然后蒸Ti(50nm)/Au(100nm)导电膜，撕去罩子和导线获得器件1(过程如图1).实物图如2(b).
C.对不同频率的光实验发现在可见到近红外有较好的响应(如图2(c))。光对时间的响应见图2(d).总之响应快，效果好。
实施例2.ZrS3纳米带薄膜纸质基底的光探测器件加工
A.在锆基片上生长ZrS3纳米带薄膜同实施例1的A部分。
B.将上述得到的ZrS3薄膜用一边带纸的双面胶带粘帖并撕下实现薄膜向纸基底转移，并用金属线和框式罩遮蔽然后蒸Ti(50nm)/Au(100nm)导电膜，撕去罩子和导线获得器件2(过程如图1).实物图如3(a).
C.对不同频率的光实验发现在可见到近红外有较好的响应(如图3(b))。光对时间的响应见图3(c).总之响应快，效果好。
实施例3.ZrS3纳米带薄膜PET基底的光探测器件加工
A.在锆基片上生长ZrS3纳米带薄膜同实施例1的A部分。
B.将双面胶带事先帖在PET基底山，然后用带胶的面覆盖上述得到的ZrS3薄膜，撕开后实现薄膜向PET基底转移，并用金属线和框式罩遮蔽然后蒸Ti(50nm)/Au(100nm)导电膜，撕去罩子和导线获得器件3(过程如图1).实物图如3(d).
C.对不同频率的光实验发现紫外可见到近红外有较好的响应(如图3(e))。总之响应快，效果好。
Claims (2)
1.ZrS3纳米带薄膜的柔性光探测器：这种探测器是将ZrS3纳米带薄膜通过单面胶带粘贴转移到PP薄膜上，或用双面胶带转移到纸和PET薄膜上，制作金属丝和纸框架掩膜，再真空蒸镀导电材料电极，揭去掩膜后，在该薄膜上有了两个以上的导电电极，这就构成了柔性的光探测器。
2.ZrS3纳米带薄膜的柔性光探测器的整个制作工艺。普通的透明的单面胶带或双面带按一定的尺寸剪小并将胶粘面粘贴到已经制备好的ZrS3纳米带薄膜上并按压，剥开胶带，此时ZrS3纳米带薄膜就转移到胶带上。如保留在单面胶带上此胶带成为基底(PP薄膜)，保留在双面胶带上另一面的纸做基地，如果预先将双面胶带粘在其它柔性基底(如PET薄膜)上按同样方法转移，形成其他柔性基底的器件。然后在转移后的薄膜上按一定的间隔平行放置直径从微米到毫米量级的金属丝或其他材质的耐一定高温的线作为遮蔽物，然后用纸剪一框式掩膜将薄膜的边缘覆盖(让带有金属线薄膜在框中暴露出来)。然后真空蒸镀导电材料如Ti/Au，Au，Cr/Au，ITO，Cu，Al等，移去上层掩膜和金属线，就形成光探测器。
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| CN105470390A (zh) * | 2015-11-23 | 2016-04-06 | 苏州大学 | 以胶带为基底构建大面积、柔性、可穿戴的有机纳米线场效应晶体管阵列的方法 |
| CN106711270A (zh) * | 2017-01-09 | 2017-05-24 | 福建农林大学 | 一种柔性氧化镓基日盲紫外光电探测器及其制备方法 |
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| US20070243352A1 (en) * | 2002-05-17 | 2007-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of transferring a laminate and method of manufacturing a semiconductor device |
| CN101311381A (zh) * | 2008-03-14 | 2008-11-26 | 南京大学 | ZrS3和ZrS2纳米带及其制法 |
| CN102664218A (zh) * | 2012-05-29 | 2012-09-12 | 哈尔滨工业大学 | 一种基于二维功能材料制备柔性光探测器的方法 |
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| US20070243352A1 (en) * | 2002-05-17 | 2007-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of transferring a laminate and method of manufacturing a semiconductor device |
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| CN102664218A (zh) * | 2012-05-29 | 2012-09-12 | 哈尔滨工业大学 | 一种基于二维功能材料制备柔性光探测器的方法 |
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| CN105470390A (zh) * | 2015-11-23 | 2016-04-06 | 苏州大学 | 以胶带为基底构建大面积、柔性、可穿戴的有机纳米线场效应晶体管阵列的方法 |
| CN105470390B (zh) * | 2015-11-23 | 2017-12-15 | 苏州大学 | 以胶带为基底构建大面积、柔性、可穿戴的有机纳米线场效应晶体管阵列的方法 |
| CN106711270A (zh) * | 2017-01-09 | 2017-05-24 | 福建农林大学 | 一种柔性氧化镓基日盲紫外光电探测器及其制备方法 |
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