CN104091797A - Novel power electronic module of three-dimensional structure - Google Patents

Novel power electronic module of three-dimensional structure Download PDF

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Publication number
CN104091797A
CN104091797A CN201410320688.1A CN201410320688A CN104091797A CN 104091797 A CN104091797 A CN 104091797A CN 201410320688 A CN201410320688 A CN 201410320688A CN 104091797 A CN104091797 A CN 104091797A
Authority
CN
China
Prior art keywords
module
copper
electronic module
power electronic
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410320688.1A
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Chinese (zh)
Inventor
江明明
郭清
徐嘉俊
盛况
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang University ZJU
Original Assignee
Zhejiang University ZJU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang University ZJU filed Critical Zhejiang University ZJU
Priority to CN201410320688.1A priority Critical patent/CN104091797A/en
Publication of CN104091797A publication Critical patent/CN104091797A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Abstract

The invention relates to a power electronic module, and discloses a power electronic module of a novel space structure. In the novel power electronic module, the module is of a hexagonal prism structure, chips are stacked on each lateral surface of the module, all the chips are connected in parallel through a copper piece surrounding the hexagon, the middle of the hexagonal prism is hollowed out into a cylinder, and a water pipe is arranged in the cylinder in a sleeved mode for water cooling. The hexagonal prism structure and the power electronic module are combined, the design of multi-chip paralleled current sharing is simplified, the heat radiation water pipe makes complete contact with a power module, and the heat radiation capacity of the power module is improved.

Description

A kind of novel electric power electric module of three-dimensional structure
Technical field
The present invention relates to power power domain.The present invention relates to a kind of electric power electronic module, concretely, is a kind of igbt (IGBT) power model.
Background technology
Take insulated gate bipolar transistor as main power model, in order to export larger power, need to be by multi-chip, not not mating due to each chip self parameter and circuit parameter when in parallel, occur that electric current distributes uneven problem when causing parallel connection, when serious, can cause device overload and damage, and in ceramic copper-clad plate (DBC) plate structure of planar power module midplane owing to being subject to the limitation of two-dimensional areas, on chip layout, be subject to many limitations.
In high power module, the parallel connection of a plurality of chips will produce very large heat, be necessary to carry out water cooler cooling, to guarantee their reliability service.Conventionally power model is planar structure, directly power model is arranged in cooled plate, has just utilized a face of cooled plate, in this planar power module, has the defect that one side radiating efficiency is lower.
Summary of the invention
The present invention is directed to traditional electric power electronic module multi-chip current-sharing design and the deficiency on radiating efficiency, ceramic copper-clad plate and the substrate of conventional I GBT module are optimized, have designed the novel six prismatic loop structures that comprise the ceramic layer of one side copper layer, six prismatic loop structures and the copper base of six prismatic loop structures.On six lateral surface copper layers of this six prismatic loop, place respectively igbt chip and power diode chip, by space symmetr, improved the harmony of parasitic parameter between each chip.
Deficiency in traditional electric power electronic module heat-sinking capability and in efficiency, combines it with six prismatic loop structures, the hollow region of this six prismatic loop, as the passage of water or other cooling fluids, improves the water-cooled efficiency of electric power electronic module integral body.
Technical scheme of the present invention is as follows:
The present invention is a kind of novel electric power electric module of three-dimensional structure.This novel plug adopts a kind of six prism space structures, and the hollow region of this six prismatic loop, as the passage of water or other cooling fluids, improves the water-cooled efficiency of electric power electronic module integral body.In each lateral surfaces of six prisms each layer of structure such as stacked chips symmetrically, by the bonding line of chip bottom copper sheet and chip surface, realize the parallel connection of each chip.At each face, placed the required power take-off of IGBT module, be connected with (9) with lead-out terminal (7), (8) on shell (11) simultaneously.
Accompanying drawing explanation
Fig. 1 is electric power electronic module of the present invention space schematic diagram.
Fig. 2 is six prismatic loop profiles of the embodiment of the present invention 1.
Fig. 3 is the schematic diagram of six prismatic loops of the embodiment of the present invention 1.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail:
Embodiment 1
Fig. 1 is the novel electric power electric modular structure of power device chip of the present invention (igbt (IGBT)), shell (11) is copper product, it is connected the power take-off of IGBT with lead-out terminal, its corresponding relation is (7) c utmost point (8) e utmost point (9) g utmost point.Fig. 2 is six prism stacked structures, its main (1) bonding line, (2) power diode chip, (3) igbt chip, (4) copper layer, (5) aluminium oxide ceramics and (6) copper base form, and middle cylindrical hollow is partly put into water pipe and carried out water-cooled.Fig. 3 is the side view of six prism stacked structures, consists of (1) bonding line, (2) power diode chip, (3) igbt chip, (4) copper layer and (10) igbt chip grid.

Claims (3)

1. the novel electric power electric module of a three-dimensional structure, its one side ceramic copper-clad plate and (6) copper base that mainly contains (1) bonding line, (2) power diode chip, (3) igbt chip, bag copper containing layer (4) and aluminium oxide ceramics (5) forms, and wherein power diode chip (2) and igbt chip (3) are placed on copper layer (4).
2. electric power electronic module according to claim 1, it is characterized in that: described bag copper containing layer (4) and the ceramic copper-clad plate of aluminium oxide ceramics (5) are six prismatic loop structures, this six prismatic loops structure memory is copper base (6), in the middle of this copper base, is the cylindrical of hollow.
3. in the middle of copper base according to claim 2, be the cylindrical of hollow, it is characterized in that: the water-cooled to module, for by water or other cooling fluid, is realized in the region of this hollow.
CN201410320688.1A 2014-07-01 2014-07-01 Novel power electronic module of three-dimensional structure Pending CN104091797A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410320688.1A CN104091797A (en) 2014-07-01 2014-07-01 Novel power electronic module of three-dimensional structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410320688.1A CN104091797A (en) 2014-07-01 2014-07-01 Novel power electronic module of three-dimensional structure

Publications (1)

Publication Number Publication Date
CN104091797A true CN104091797A (en) 2014-10-08

Family

ID=51639500

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410320688.1A Pending CN104091797A (en) 2014-07-01 2014-07-01 Novel power electronic module of three-dimensional structure

Country Status (1)

Country Link
CN (1) CN104091797A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105932016A (en) * 2016-06-12 2016-09-07 重庆大学 Dynamic and static current-sharing and multi-chip paralleled power module

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007288046A (en) * 2006-04-19 2007-11-01 Fuji Electric Holdings Co Ltd Semiconductor module for electric power
US8100567B2 (en) * 2005-10-19 2012-01-24 Rambus International Ltd. Light-emitting devices and related systems
CN202242164U (en) * 2011-09-08 2012-05-30 鹤山东力电子科技有限公司 Single-side metal-based copper-clad plate
CN202712173U (en) * 2012-08-07 2013-01-30 四川英杰电气股份有限公司 Parallel-type IGBT module
CN103887300A (en) * 2012-12-20 2014-06-25 浙江大学 Power IGBT module with high reliability heat conduction insulating substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8100567B2 (en) * 2005-10-19 2012-01-24 Rambus International Ltd. Light-emitting devices and related systems
JP2007288046A (en) * 2006-04-19 2007-11-01 Fuji Electric Holdings Co Ltd Semiconductor module for electric power
CN202242164U (en) * 2011-09-08 2012-05-30 鹤山东力电子科技有限公司 Single-side metal-based copper-clad plate
CN202712173U (en) * 2012-08-07 2013-01-30 四川英杰电气股份有限公司 Parallel-type IGBT module
CN103887300A (en) * 2012-12-20 2014-06-25 浙江大学 Power IGBT module with high reliability heat conduction insulating substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105932016A (en) * 2016-06-12 2016-09-07 重庆大学 Dynamic and static current-sharing and multi-chip paralleled power module

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Application publication date: 20141008

WD01 Invention patent application deemed withdrawn after publication