CN104087897A - Zinc oxide film imaging method - Google Patents
Zinc oxide film imaging method Download PDFInfo
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- CN104087897A CN104087897A CN201410322876.8A CN201410322876A CN104087897A CN 104087897 A CN104087897 A CN 104087897A CN 201410322876 A CN201410322876 A CN 201410322876A CN 104087897 A CN104087897 A CN 104087897A
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Abstract
The invention discloses a zinc oxide film imaging method comprising the following steps of firstly, cleaning a substrate, photoetching and developing to obtain an imaged photoresist; secondly, placing the substrate into a vacuum chamber to deposit a ZnO film with the thickness of 100-200nm; finally, ultrasonically stripping the substrate in an organic solvent to obtain an imaged zinc oxide film. The zinc oxide film imaging method is simple in process; the imaged zinc oxide film is high in image precision, favorable in dielectric property and good in application prospect and has favorable conductivity and light transparency.
Description
Technical field
The invention belongs to electronic information material and components and parts field, particularly a kind of patterned novel method for all-transparent thin-film-transistor material.
Background technology
Transparent conductive film, because having in visible transparent and the excellent photoelectric characteristic such as resistivity is low, is widely used in multiple photoelectric device, as fields such as sun power transparency electrode, energy-conservation form and flat liquid crystal display.Current application is ITO transparent conductive film the most widely, in ITO, because containing expensive rare indium metal, causes its cost higher.Than ITO, ZnO film has wider energy gap, has very high transmissivity in visible-range, can reduce resistivity by doping such as Al, Ga, In.And, ZnO transparent conductive film abundant raw material, with low cost, chemical stability is good, and easily scale operation, has a good application prospect.
In addition, wide-band gap material zinc-oxide film is a kind of N-type semiconductor, because it has larger photoelectric coupling coefficient, lower temperature factor and less specific inductivity, zinc-oxide film with C axle oriented growth has stronger piezoelectricity and photovoltaic effect, can be used as electricity, acoustic device, for example, aspect stereo surface-duided wave (BAW), can be used for ultrasonic microscope and film Resonator etc.; In addition, zinc oxide, as transport material, has sizable prospect aspect wave filter, amplifier and body sensor.In addition, zinc-oxide film manufacture craft and integrated circuit technology are compatible, can realize integratedly with multiple semiconducter device such as silicon, thereby are paid close attention to widely.
But, in the time that zinc oxide is used in certain device, especially transparent film device, often need zinc-oxide film to carry out graphically.At present, conventional graphic method, taking etching as main, comprises dry etching and wet etching.The apparatus expensive of dry etching and complex process, complex operation, wet-etching technology is simple, easy and simple to handle, but etch rate is responsive especially to influence factor, and etching time is wayward, and etching pattern precision is poor.
Therefore, the current a kind of new film pattern method of exploitation of needing badly, to meet the application demand of zinc-oxide film.
Summary of the invention
Object of the present invention, is to overcome the patterned shortcoming of existing zinc-oxide film with not enough, provides a kind of new zinc-oxide film patterned method.The method, using patterned photoresist material as sacrifice layer, adopts the method for peeling off in organic solvent for ultrasonic to make zinc-oxide film graphical.
The present invention is achieved by following technical solution.
A kind of patterned method of zinc-oxide film, has following steps:
(1) clean substrate and photoetching development
(a) substrate is put into organic solvent for ultrasonic and cleaned, with dry in nitrogen gas stream after deionized water rinsing;
(b) photoresist material is spin-coated on substrate, coat-thickness is 1um～2um, after drying, uses lithography mask version to do exposure-processed;
(c) use developing solution that figure is developed out, obtain patterned photoresist material;
(2) substrate after developing is put into vacuum chamber, on corresponding radio frequency target, install zinc oxide target, when vacuum tightness <9 × 10 of magnetron sputtering
-6when Pa, open radio frequency source, pass into working gas, the described film thickness of deposition that carries out ZnO film is 100nm～200nm;
(3) after step (2) finishes, take out substrate, in organic solvent, substrate is carried out to ultrasonic peeling off, after peeling off, obtain patterned zinc-oxide film.
Described step (1) substrate (a) is ordinary glass substrate, Si substrate or Al
2o
3substrate.
Described step (1) (a) or the organic solvent of step (3) be acetone or alcohol.
Described step (1) (a) substrate is put into organic solvent for ultrasonic clean time be 10min～20min.
The working gas that described step (2) passes into is argon gas.
Beneficial effect of the present invention is as follows:
(1) zinc-oxide film graphic method disclosed by the invention, pattern precision is high, and thickness is 100nm～200nm, and device has good electroconductibility and light transmission.
(2) zinc-oxide film graphic method provided by the invention, flow process is simple, dielectric properties are good, has a good application prospect.
Embodiment
Below by specific embodiment, the invention will be further described.
Acetone, alcohol and target raw material used in embodiment are commercially available analytical pure raw material.
Sputter adopts traditional solid reaction process synthetic with medium target, and its relative density is greater than 95%.
Specific embodiment is as follows:
Embodiment 1
(1) clean substrate and photoetching development
(a) silicon substrate is put into acetone organic solvent for ultrasonic and cleaned, with dry in nitrogen gas stream after deionized water rinsing;
(b) photoresist material is spin-coated on silicon substrate, coat-thickness is 1um, uses lithography mask version to do exposure-processed;
(c) use developing solution that electrode pattern is developed out;
(2) silicon substrate after developing is put into the vacuum chamber of magnetic control sputtering device, on corresponding radio frequency target, installing zinc oxide target, use the method depositing zinc oxide film of rf magnetron sputtering;
(3) after step (2) finishes, take out silicon substrate, in acetone organic solvent, substrate is peeled off, after peeling off, obtain required zinc oxide films film pattern.
Embodiment 2～5
The processing step of embodiment 2～5 is same as embodiment 1, and just photoresist material is spin-coated on on-chip coat-thickness and film thickness is different from substrate, the organic solvent of employing.
Main technologic parameters of the present invention and the present invention adopt the unevenness contrast of the ZnO film that stripping method and wet etching obtain to refer to table 1.By contrast, can find out under the same conditions, the pattern precision (unevenness of stripping method gained film is less than the unevenness of wet etching gained film) that adopts the film pattern precision of stripping method acquisition to obtain higher than wet etching, and the surfaceness of stripping method gained film is less.
Table 1
Unevenness=(d in table 1
max?d
min)/(d
max+ d
min); d
maxfor the maximum value of film thickness, d
minfor the minimum value of thickness.
The present invention is not limited to above-described embodiment, and the variation of a lot of details is possible, but therefore this do not run counter to scope and spirit of the present invention.
Claims (5)
1. the patterned method of zinc-oxide film, has following steps:
(1) clean substrate and photoetching development
(a) substrate is put into organic solvent for ultrasonic and cleaned, with dry in nitrogen gas stream after deionized water rinsing;
(b) photoresist material is spin-coated on substrate, coat-thickness is 1um～2um, after drying, uses lithography mask version to do exposure-processed;
(c) use developing solution that figure is developed out, obtain patterned photoresist material;
(2) substrate after developing is put into vacuum chamber, on corresponding radio frequency target, install zinc oxide target, when vacuum tightness <9 × 10 of magnetron sputtering
-6when Pa, open radio frequency source, pass into working gas, carry out the deposition of ZnO film, described film thickness is 100nm～200nm;
(3) after step (2) finishes, take out substrate, in organic solvent, substrate is carried out to ultrasonic peeling off, after peeling off, obtain patterned zinc-oxide film.
2. the patterned method of a kind of zinc-oxide film according to claim 1, is characterized in that, described step (1) substrate (a) is ordinary glass substrate, Si substrate or Al
2o
3substrate.
3. the patterned method of a kind of zinc-oxide film according to claim 1, is characterized in that, described step (1) (a) or the organic solvent of step (3) be acetone or alcohol.
4. the patterned method of a kind of zinc-oxide film according to claim 1, is characterized in that, described step (1) (a) substrate is put into organic solvent for ultrasonic clean time be 10min～20min.
5. the patterned method of a kind of zinc-oxide film according to claim 1, is characterized in that, the working gas that described step (2) passes into is argon gas.
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| CN201410322876.8A CN104087897A (en) | 2014-07-08 | 2014-07-08 | Zinc oxide film imaging method |
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| CN201410322876.8A CN104087897A (en) | 2014-07-08 | 2014-07-08 | Zinc oxide film imaging method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104878355A (en) * | 2015-04-30 | 2015-09-02 | 北京空间飞行器总体设计部 | Preparation method of nano-medium layer based on magnetron sputtering process |
| CN107050670A (en) * | 2016-02-22 | 2017-08-18 | 李淑仙 | Therapeutic apparatus |
| CN112593186A (en) * | 2020-12-01 | 2021-04-02 | 广东广纳芯科技有限公司 | Method for producing an electrode on a substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101033561A (en) * | 2007-03-29 | 2007-09-12 | 上海交通大学 | Method of manufacturing abnormity spinneret |
| CN103060764A (en) * | 2013-03-08 | 2013-04-24 | 南京信息工程大学 | Method of plating ZnO film on surface of metal material |
-
2014
- 2014-07-08 CN CN201410322876.8A patent/CN104087897A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101033561A (en) * | 2007-03-29 | 2007-09-12 | 上海交通大学 | Method of manufacturing abnormity spinneret |
| CN103060764A (en) * | 2013-03-08 | 2013-04-24 | 南京信息工程大学 | Method of plating ZnO film on surface of metal material |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104878355A (en) * | 2015-04-30 | 2015-09-02 | 北京空间飞行器总体设计部 | Preparation method of nano-medium layer based on magnetron sputtering process |
| CN104878355B (en) * | 2015-04-30 | 2017-04-05 | 北京空间飞行器总体设计部 | A kind of nanometer dielectric layer preparation method based on magnetron sputtering technique |
| CN107050670A (en) * | 2016-02-22 | 2017-08-18 | 李淑仙 | Therapeutic apparatus |
| CN107050670B (en) * | 2016-02-22 | 2019-08-20 | 李淑仙 | Therapeutic apparatus |
| CN112593186A (en) * | 2020-12-01 | 2021-04-02 | 广东广纳芯科技有限公司 | Method for producing an electrode on a substrate |
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Application publication date: 20141008 |