CN104081500A - Radiation-curing adhesive tape for dicing - Google Patents
Radiation-curing adhesive tape for dicing Download PDFInfo
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- CN104081500A CN104081500A CN201380007115.7A CN201380007115A CN104081500A CN 104081500 A CN104081500 A CN 104081500A CN 201380007115 A CN201380007115 A CN 201380007115A CN 104081500 A CN104081500 A CN 104081500A
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- radiation
- curing
- adhesive
- adhesive tape
- cutting
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2415/00—Presence of rubber derivatives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
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- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
Abstract
Provided is a radiation-curing adhesive tape for dicing capable of easy pickup without any residual adhesive in the pickup step even for, e.g., a semiconductor chip on which a through electrode is provided. This radiation-curing adhesive tape (1) for dicing has a radiation-curing adhesive layer (3) provided on a substrate sheet (2), wherein the tape is characterized in that Young's modulus after radiation curing/Young's modulus before radiation curing, which is the ratio of the Young's modulus after radiation curing to the Young's modulus before radiation curing, is 1.0-1.8.
Description
Technical field
The present invention relates to when it being cut to (dicing) in order to make semiconductor wafer etc. realize element panelization to be cut off for fixing this semiconductor wafer etc. the adhesive tape of body.
Background technology
Semiconductor device in the past conducts electricity to connect by wire-bonded (wire bonding) and manufactures by making to be arranged at semiconductor chip on substrate.In recent years, corresponding to making the further miniaturization of machine, slimming, light-weighted requirement, to take the electronic unit that semiconductor device that these machine intimates were used is representative, also there is same requirement.In order to realize the miniaturization of electronic unit, laminated semiconductor chip has for example been proposed to realize the three-dimensional mounting technique (for example, with reference to patent documentation 1) of high-density installation.In addition, as the method for carrying out three-dimensional mounting technique, for example, proposed to form the electrode (through electrode) of perforation chip and be laminated with and be called the semiconductor package (for example, with reference to patent documentation 2) of chip for the installation of insert (interposer) via this electrode.
Studying at present following technology: make the wafer cut-out that is formed with through electrode be separated into element small pieces (semiconductor chip) (cutting (dicing) operation), and in the operation that these semiconductor chips are picked up (picking up (pick-up) operation), use the wafer cutting processing adhesive tape with radiation-curing type adhesive layer.
When adhesive tape is used in the cutting that has a radiation-curing type adhesive layer in use, in cutting action, must keep fully wafer.Yet it is highly the jut of the through electrode of 3～tens μ m that the wafer that is provided with through electrode has at one or both sides conventionally.Therefore, even if cutting processing adhesive tape in the past of laminating mostly also cannot be followed this jut and cannot be kept wafer.In addition, this result can cause producing space at the projection periphery of through electrode.Conventionally, in cutting action, utilize the rotation blade that is called as blade (blade) to carry out singualtion to chip.When thering is space and cannot keep wafer fully between the projection periphery of adhesive phase and through electrode, impact during because of cutting makes chip vibration, cause the collision of blade and chip, produce chip damaged ((chipping) breaks) and the rate of finished products of reduction chip.
Unfavorable condition when eliminating cutting action, the radiation-curing type of the storage elastic modulus that has proposed to make the gel fraction of adhesive phase and 10 ℃ in particular range adhesive tape (for example, with reference to patent documentation 3) for cutting.For the radiation-curing type cutting of patent documentation 3 with for adhesive tape, by making it have gel fraction and the storage elastic modulus adhesive phase in particular range, thus the above-mentioned unfavorable condition while having eliminated cutting action.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2002-50738 communique
Patent documentation 2: TOHKEMY 2005-236245 communique
Patent documentation 3: TOHKEMY 2006-202926 communique
Summary of the invention
The problem that invention will solve
Yet, for the radiation-curing type cutting of above-mentioned patent documentation 3 with for adhesive tape, after cutting, adhesive phase is irradiated radioactive ray and it is solidified, make thus bonding force reduce, now, due to adhesive phase cure shrinkage, therefore make adhesive phase encase the projection of the wafer surface of (Japanese original text: Nogami body こ む) through electrode etc., cause producing the problem that cannot pick up well the semiconductor chip after cutting.Radiation-curing type cutting at above-mentioned patent documentation 3 is used in adhesive tape, uses and contains the adhesive that produces the gas producing agent of gas because of stimulation.Yet, in adhesive, produce in the mechanism of gas, therefore because adhesive becomes fragile, may produce adhesive chip adhering to (cull), rate of finished products is reduced chip.
Therefore it, the object of the present invention is to provide a kind of radiation-curing type cutting adhesive tape, even if also can easily pick up and can not produce cull to semiconductor chip that is provided with through electrode etc. in picking up operation.
For solving the means of above-mentioned problem
In order to solve above-mentioned problem, radiation-curing type cutting adhesive tape of the present invention, it is characterized in that, it is the radiation-curing type adhesive tape that is provided with radiation-curing type adhesive phase in substrate sheets, and the ratio of its Young's modulus after radiation-curing Young's modulus before radiation-curing with respect to it is 1.0～1.8.
It is 1.8 * 10 that above-mentioned radiation-curing type cutting preferably makes the storage elastic modulus G ' of above-mentioned adhesive phase before radiation-curing with adhesive tape
4～4.7 * 10
4pa.
In addition, with adhesive tape, preferably to make the loss coefficient tan δ of above-mentioned adhesive phase before radiation-curing be 0.20～0.35 to the cutting of above-mentioned radiation-curing type.
When in addition, above-mentioned radiation-curing type cutting is adapted at cutting semiconductor chip with adhesive tape, use.
In addition, above-mentioned radiation-curing type cutting is applicable to using at above-mentioned semiconductor wafer with adhesive tape has thrust or the poor situation of section at the mask with above-mentioned adhesive phase laminating.
Invention effect
According to the present invention, can reduce breaking in cutting action, even and if also can easily pick up and can not produce cull being provided with the semiconductor chip of through electrode in picking up operation.
Accompanying drawing explanation
Fig. 1 means the schematic cross sectional view of the structure of adhesive tape for the radiation-curing type cutting of embodiments of the present invention.
Fig. 2 means and uses the radiation-curing type of embodiments of the invention to cut the schematic plan plane graph of the structure of the chip cutting off with adhesive tape.
Embodiment
Below embodiments of the present invention are elaborated.
The radiation-curing type cutting of embodiments of the present invention forms at least 1 layer of adhesive phase 3 with adhesive tape 1 at least one side of substrate sheets 2.Fig. 1 means the schematic cross sectional view of the preferred implementation of adhesive tape 1 for radiation-curing type cutting of the present invention, and the cutting of radiation-curing type has substrate sheets 2 with adhesive tape 1, and forms adhesive phase 3 in substrate sheets 2.
For the radiation-curing type cutting adhesive tape 1 of embodiments of the present invention, the ratio (Young's modulus before the Young's modulus/radiation-curing after radiation-curing) of its Young's modulus after radiation-curing Young's modulus before radiation-curing with respect to it is 1.0～1.8.
Radiation-curing type cutting with the face of the laminating adhesive phase 3 of adhesive tape 1 when thering is thrust (bump) or the poor wafer of section and fit in the cutting of radiation-curing type with adhesive tape 1, preferably make thrust or a section difference roughly imbed completely in adhesive phase 3.At thrust or section is poor while having space with the cutting of radiation-curing type between with adhesive tape 1, because the vibration of the rotation blade (blade) in cutting action is significantly vibrated chip, cause that chip and blade or adjacent chip contact, generation chip is damaged.
On the other hand, at thrust or section is poor roughly imbed adhesive phase 3 completely in the situation that, can lower the impact of revolving because of the vibration of rotor sword, in the situation that use radiation-curing type adhesive to form in the adhesive of formation adhesive phase 3, because adhesive phase 3 solidifies connecting airtight under thrust or the poor state of section, therefore when picking up operation adhesive phase 3 can cover thrusts or section poor and produce the unfavorable condition that cannot pick up.
Herein, radiation-curing type adhesive refers to: at least contain in molecule end and have the compound (a) of carbon-to-carbon unsaturated bond and accept radioactive ray and produce the binding compositions of the compound that is called initator of free radical.By irradiating radioactive ray, make initator activation, and utilize the free radical producing that the carbon-to-carbon unsaturated bond of end is activated continuously, thus compound (a) bonding and compound (a) is formed be to each other cross-linked gradually.
Form crosslinked before, because by making to be scattered in, a plurality of compounds (a) in adhesive are crosslinked that it is assembled and bonding, so adhesive becomes harder before crosslinked after crosslinked.Connecting airtight while causing this cross-linking reaction under thrust or the poor state of section, because adhesive coverage thrust or poor the encumbering smoothly of section of hardening are peeled off.Particularly, in thering is the wafer of through electrode, owing to connecting the inner thrust that forms of wafer, therefore Die strength is significantly weakened, when obstruction is peeled off, easily cause that chip is damaged.By adjusting the state of cure of adhesive, can make to solidify because of this adhesive cause thrust or the poor covering of section are inhibited.
As the index of the state of cure of adhesive, there is the tensile modulus of elasticity of adhesive tape 1 for the cutting of radiation-curing type.Tensile modulus of elasticity before radiation-curing with solidify after the ratio (tensile elasticity after radiation-curing/tensile modulus of elasticity) before solidifying of tensile modulus of elasticity more approach 1, mean be cross-linked to form before to compare firmness change less.As mentioned above, there is curing reaction by irradiating radioactive ray in the adhesive phase 3 of radiation-curing type, and therefore above-mentioned ratio is greater than 1 conventionally.This ratio is 1.8 when following, less to thrust or the poor covering of section, can easily pick up.This ratio is greater than at 1.8 o'clock, produces to thrust or the poor covering of section (the Japanese original text: the stress that puts on chip in the time of げ on prominent I) becomes large, cannot pick up or produce chip breakage on the upper top of picking up operation.
In addition, tensile modulus of elasticity is herein the value according to JIS K 7127:1999 gained.In addition, generally speaking substrate sheets 2 is thicker compared with the thickness of adhesive phase 3, and rigidity is higher, by obtaining the ratio of the tensile modulus of elasticity of adhesive tape 1 for the cutting of radiation-curing type, the more only tensile modulus of elasticity of adhesive phase 3.
Herein, the exposure of radioactive ray has no particular limits, for example, when irradiation ultraviolet radiation, be preferably 100～1000mJ/cm
2, 200～500mJ/cm more preferably
2.
When preventing that semiconductor chip from breaking, the storage elastic modulus G ' of the adhesive phase 3 before radiation-curing is preferably 1.8 * 10
4～4.7 * 10
4pa, more preferably 2.0 * 10
4～4.7 * 10
4pa.G ' is lower than 1.8 * 10
4during pa, can make adhesive phase 3 connect airtight fully in thrust or section poor, because adhesive phase 3 is too soft, therefore cannot suppress the rotation blade vibration in cutting action, cause producing and break.In addition, G ' is greater than 4.7 * 10
4during pa, cannot make adhesive phase 3 connect airtight fully in thrust or section poor and cause producing space, therefore because the rotation blade vibration in cutting action causes producing, break.
In addition, in order to maintain adhesive phase 3, connect airtight fully in thrust or the poor state of section, the loss coefficient tan δ of the adhesive phase 3 before radiation-curing is preferably 0.20～0.35, and more preferably 0.25～0.35.Loss coefficient tan δ is with storage elastic modulus G ' and loss elastic modulus G " ratio (G "/G ') represent.When tan δ is too small, even in the situation that adhesive phase 3 can connect airtight in thrust or section difference fully, also can be because repulsion ability is difficult for maintaining greatly the state connecting airtight.When tan δ is excessive, because repulsion ability is little, therefore while picking up after singualtion, become be difficult for conduction from below the stress of upper top fixture.At the loss coefficient tan of adhesive phase 3 δ, be less than at 0.20 o'clock, cannot maintain the state connecting airtight, cause producing space between wafer and adhesive tape, may make because of above-mentioned mechanism the deterioration of breaking.At the loss coefficient tan of adhesive phase 3 δ, be greater than at 0.35 o'clock, be difficult for owing to picking up after singualtion conduction from below the stress of upper top fixture, have to improve upper heights of roofs, the possibility of chip breakage uprises.
Below, describe each inscape of adhesive tape 1 for the radiation-curing type cutting of relevant present embodiment in detail.
(substrate sheets 2)
About forming the resin of substrate sheets 2, have no particular limits, can use the resin that can form sheet.For example can use polypropylene, high density polyethylene (HDPE) (HDPE), low density polyethylene (LDPE) (LDPE), straight-chain low density polyethylene (LLDPE), ethylene-propylene copolymer, propylene copolymer, ethylene-propylene-diene copolymer sulfide, polybutene, polybutadiene, polymethylpentene, ethene-(methyl) acrylic copolymer, ethene-(methyl) methyl acrylate copolymer, ethene-(methyl) ethyl acrylate copolymer, ethene-(methyl) butyl acrylate copolymer, polyvinyl chloride, vinyl chloride-vinyl acetate copolymer, ethylene-vinyl chloride-vinyl acetate co-polymer, polyurethane, polyamide, ionomer, nitrile rubber, butyl rubber, styrene isoprene rubber, styrene butadiene ribber, natural rubber and hydride or modifier etc.These resins can be used alone or two or more mixes use, in addition, also can adopt 2 layers of above multilayer to form.
The thickness of substrate sheets 2 has no particular limits, and at this thickness, crosses when thin, is difficult for processing, and when this thickness is blocked up, owing to being difficult for the stress of top fixture in conduction when picking up operation, is therefore preferably 50～150 μ m, more preferably 70～100 μ m.
When improving adhesion, also can implement to the face contacting with adhesive phase 3 of substrate sheets 2 processing of corona treatment or priming paint (primer) etc.
(adhesive phase 3)
The adhesive composition that forms adhesive phase 3 is preferably used such as middle adhesive compositions of recording such as Japanese kokai publication hei 7-135189 communiques, but be not limited thereto, can use the base polymer of rubber series or acrylic acid series is coordinated and in molecule, has the compound (hereinafter referred to as optical polymerism compound) of at least 2 radioactive ray polymerism carbon-to-carbon double bonds and adhesive composition that Photoepolymerizationinitiater initiater forms or the base polymer addition of acrylic acid series is had to the adhesive composition that the compound of carbon-to-carbon double bond forms.
As the method that imports carbon-to-carbon double bond in acrylic acid series polymeric compounds, have no particular limits, such as being listed below method etc.: use the monomer with functional group to carry out copolymerization as co-polymerized monomer, be prepared into after the acrylic acid series polymeric compounds that contains functional group, make to have the functional group that can react with the functional group containing in functional group's acrylic acid series polymeric compounds and the compound of carbon-to-carbon double bond, maintaining under the state of the radiation-curable of carbon-to-carbon double bond (radioactive ray polymerism), carry out condensation reaction or addition reaction with the acrylic acid series polymeric compounds that contains functional group, prepare the acrylic acid series polymeric compounds in molecule with carbon-to-carbon double bond.
The base polymer of above-mentioned rubber series or acrylic acid series can be used: the rubber series polymer such as natural rubber, various synthetic rubber; Or poly-(methyl) alkyl acrylate, (methyl) alkyl acrylate, (methyl) alkyl acrylate and the acrylic acid series polymeric compounds such as copolymer that can form with the unsaturated monomer of these material copolymerization.When using ethyl acrylate, butyl acrylate, acrylic acid methoxyl group ethyl ester as the monomer of formation base polymer, owing to can more improving pick, therefore preferably.
As optical polymerism compound, for example can enumerate: trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, TEG two (methyl) acrylate, 1, the carboxylate of (methyl) acrylic acid such as 6-hexylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, dipentaerythritol six (methyl) acrylate, glycerol two (methyl) acrylate and polyalcohol, ester acrylate oligomer, 2-acrylic-bis--3-cyclobutenyl cyanurate etc. has the cyanurate based compound of carbon-carbon double key group, three (2-acryloxy ethyl) isocyanuric acid ester, three (2-methacryloxyethyl) isocyanuric acid ester, two (the 2-acryloxy ethyl) isocyanuric acid esters of 2-hydroxyethyl, two (2-acryloxy ethyl) 2-[(5-acryloxy hexyl)-oxygen base] ethyl isocyanuric acid ester, three (1, 3-bis-acryloxies-2-propyl group-oxygen base carbonylamino n-hexyl) isocyanuric acid ester, three (1-acryloxy ethyl-3-methacryloxy-2-propyl group-oxygen base carbonylamino n-hexyl) isocyanuric acid ester, three (4-acryloxy normal-butyl) isocyanuric acid ester etc. has the isocyanuric acid ester based compound of carbon-carbon double key group etc.These optical polymerism compounds can be used alone or two or more is used in combination.
Young's modulus in tension ratio before and after the radiation-curing is 1.8 when following, and the carbon-to-carbon double bond number in a part has no particular limits, and the carbon-to-carbon double bond number in a part is preferably 2～6.In addition, the use level of optical polymerism compound also has no particular limits, and above-mentioned base polymer 100 mass parts with respect to adhesive, are preferably 10～90 mass parts, more preferably 20～70 mass parts, more preferably 20～60 mass parts.
Radiation-curing type adhesive can produce the polymerization curing reaction based on radiation exposure by sneak into Photoepolymerizationinitiater initiater in adhesive.As this kind of Photoepolymerizationinitiater initiater, can enumerate such as benzoin alkylether series initiators such as benzoin methylether, benzoin ethyl ether, benzoin propyl ether, benzoin iso-propylether, benzoin isobutyl ethers; Benzophenone, benzoyl benzoic acid, 3, the benzophenone series initiators such as 3 '-dimethyl-4-methoxy benzophenone, polyvinyl benzophenone; Alpha-hydroxy cyclohexyl-phenyl ketone, 4-(2-hydroxyl-oxethyl) phenyl (2-hydroxyl-2-propyl group) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenyl acetophenone, 2, the aromatic ketone series initiators such as 2-diethoxy acetophenone, 2-methyl isophthalic acid-[4-(methyl mercapto)-phenyl]-2-morpholinyl propane-1-ketone; The aromatic series ketal series initiators such as benzil dimethyl ketal; Thioxanthones, CTX, 2-methyl thioxanthones, 2-ethyl thioxanthones, ITX, 2-dodecyl thioxanthones, 2,4-bis-clopenthixal ketones, 2,4-dimethyl thioxanthones, 2,4-diethyl thioxanthone, 2, the thioxanthones series initiators such as 4-diisopropyl thioxanthones; The benzil series initiators such as benzil; The benzoin series initiators such as benzoin; And α-one alcohol (ketol) based compound (2-methyl-2-hydroxypropiophenonepreparation etc.), aromatic sulfonyl based compound (2-naphthalene sulfonyl chloride etc.), photolytic activity oxime compound (1-benzophenone-1,1-propane diketone-2-(adjacent ethoxy carbonyl) oxime etc.), camphorquinone, halogenation ketone, acylphosphine oxide, acyl phosphonate etc.Photoepolymerizationinitiater initiater can be used alone or two or more is used in combination.
The use level of Photoepolymerizationinitiater initiater has no particular limits, and above-mentioned base polymer 100 mass parts with respect to adhesive, are preferably 1～10 mass parts, more preferably 2～7 mass parts.
In addition, in above-mentioned adhesive, can coordinate as required isocyanate-based curing agent.As isocyanate-based curing agent, particularly, can use polyvalent isocyanate based compound, for example 2, 4-toluene di-isocyanate(TDI), 2, 6-toluene di-isocyanate(TDI), 1, 3-XDI, 1, 4-XDI, diphenyl methane-4, 4 '-vulcabond, diphenyl methane-2, 4 '-vulcabond, 3-MDPM vulcabond, hexamethylene diisocyanate, IPDI, dicyclohexyl methyl hydride-4, 4 '-vulcabond, dicyclohexyl methyl hydride-2, 4 '-vulcabond, lysine isocyanates etc.
The use level of curing agent has no particular limits, and above-mentioned base polymer 100 mass parts with respect to adhesive, are preferably 0.01～10 mass parts, more preferably 0.1～5 mass parts.
In being used to form the adhesive composition of radiation-curing type adhesive, also can need to contain known additives such as tackifier, age resister, filler, colouring agent, fire retardant, antistatic agent, softening agent, ultra-violet absorber, antioxidant, plasticizer, surfactant etc. by root.
Adhesive phase 3 of the present invention can utilize the formation method of known adhesive phase 3 to form.For example can utilize following methods in substrate sheets 2, to form adhesive phase 3, described method is: the predetermined surface that above-mentioned adhesive composition is coated to substrate sheets 2 forms the method for adhesive phase 3; Or it is upper and form after adhesive phase 3 that adhesive composition is coated to spacing body (such as being coated with the plastics film of release agent or thin slice etc.), this adhesive phase 3 is needed on to the method for the predetermined surface of substrate sheets 2.As long as the thickness of adhesive phase 3, poor higher than thrust or section, has no particular limits.
In addition, Fig. 1 shows the radiation-curing type cutting adhesive tape 1 that adhesive phase 3 has individual layer form, also can have the form of the adhesive phase 3 of the multilayer of being laminated with.When being laminated with the adhesive phase 3 of multilayer, preferably: the adhesive phase 3 when cutting with the face of bonded wafer is radiation-curing type adhesive phase 3, and the storage elastic modulus G ' before radiation-curing is 1.8 * 10
4～4.7 * 10
4pa, the loss coefficient tan δ before radiation-curing is 0.20～0.35.
In addition, until for during actual, in order to protect adhesive phase 3, can as required the film of synthetic resin using usually used as spacing body be attached to adhesive phase 3 sides.As the constituent material of film of synthetic resin, can enumerate the film of synthetic resin of polyethylene, polypropylene, PETG etc. or paper etc.In order to improve the fissility of Autoadhesive layer 3, can to the surface of film of synthetic resin, implement as required the lift-off processing such as silicone-treated, chain alkyl processing, fluorine processing.The thickness of film of synthetic resin is generally 10～100 μ m, is preferably 25～50 μ m left and right.
< using method >
Below, radiation-curing type cutting of the present invention is described by the using method of adhesive tape 1.
Radiation-curing type of the present invention cutting is attached to adhesive tape 1 after the installation that is cut off the semiconductor component of thing (mount) operation, according to well-established law, cut, then move to radiation exposure, pick up operation.As semiconductor component, can enumerate Si semiconductor, compound semiconductor, semiconductor package body, glass, pottery etc., the cutting of radiation-curing type can be suitable for adhesive tape 1 semiconductor wafer that cutting has through electrode.
In installation procedure, conventionally will be cut off the cutting of thing and radiation-curing type overlapping with adhesive tape 1, lateral dominance pushes with the known pressing methods such as pressing method of use crimping roller, and limit is cut off the attaching of thing and adhesive tape.When adhesive tape and the adhesion that is cut off thing are insufficient, also can adopt the method heating being cut off thing.
In cutting action, make blade High Rotation Speed, will be cut off thing and cut into the size of regulation.During cutting, can adopt and cut to cut-out mode of full cutting of being called of part cutting belt (full cut) etc.
After cutting, by irradiation ultraviolet radiation, adhesive phase 3 is solidified, to reduce adhesiveness.By irradiation ultraviolet radiation, can make the adhesiveness of adhesive phase 3 reduce because solidifying, it is easily peeled off.Herein, ultraviolet irradiation amount has no particular limits, and is preferably 100～1000mJ/cm
2, 200～500mJ/cm more preferably
2.
After ultraviolet ray is irradiated, pick up operation.In picking up operation, expansion operation can be set.As pick-up method, have no particular limits, can adopt known various pick-up method in the past.Such as utilizing the fixtures such as pin that each cut off machine is pushed up in cutting belt, and the method for the cut off machine by behind upper top being picked up by pick device etc.
Embodiment
Below, according to embodiment, illustrate in greater detail the present invention, but the present invention is not subject to the restriction of these embodiment.
< forms the resin combination > of adhesive phase
As the resin combination that forms adhesive phase, prepared following A～H.
(adhesive composition A)
With respect to acrylic acid series polymeric compounds (by ethyl acrylate 23mol%, butyl acrylate 56mol%, the acrylic acid series copolymer (weight average molecular weight 900,000) that acrylic acid methoxyl group ethyl ester 21mol% forms) 100 mass parts, add polyisocyanate compounds (Nippon Polyurethane Industry Co., Ltd.'s system, trade name CORONATE L) 2 mass parts, tetramethylol methane tetraacrylate 30 mass parts as optical polymerism compound, and Photoepolymerizationinitiater initiater (BASF AG's system, trade name IRGACURE 184) 2 mass parts mixing, be prepared into the adhesive composition A of radiation-curable.
(adhesive composition B)
Except optical polymerism compound being set as to pentaerythritol triacrylate 60 mass parts, similarly prepared adhesive composition B with adhesive composition A.
(adhesive composition C)
Except the copolymer (weight average molecular weight 500,000) that acrylic acid series polymeric compounds is set as formed by 2-EHA, methyl acrylate, acrylic acid 2-hydroxy methacrylate, similarly prepared adhesive composition C with adhesive composition A.
(adhesive composition D)
Except optical polymerism compound being set as to dipentaerythritol acrylate and use level being set as 20 mass parts, similarly having prepared adhesive composition D with adhesive composition C.
(adhesive composition E)
Except the use level of optical polymerism compound being set as to 50 mass parts, similarly prepared adhesive composition E with adhesive composition D.
(adhesive composition F)
Except the use level of optical polymerism compound being set as to 80 mass parts, similarly prepared adhesive composition F with adhesive composition D.
(adhesive composition G)
Make acrylic acid series copolymer 100 mass parts that formed by 2-EHA, methacrylic acid, acrylic acid 2-hydroxy methacrylate, 2-methacryloxyethyl isocyanates (Showa Denko K. K's system, trade name KARENZ MOI) 0.2 mass parts with conduct with optical polymerism carbon-to-carbon double bond and functional group's compound is reacted, obtained to recurring unit's bonding of main chain having the polymer (weight average molecular weight 600,000) of the residue of acrylic monomer portion, described acrylic monomer portion has containing radiation-curable carbon-to-carbon double bond group.With respect to above-mentioned polymer 100 mass parts, add polyisocyanate compounds (Japanese polyurethane Co., Ltd. system, trade name CORONATE L) 1 mass parts and Photoepolymerizationinitiater initiater (BASF AG's system, trade name IRGACURE 184) 2 mass parts and mix, being prepared into the adhesive composition G of radiation-curable.
(adhesive composition H)
Except the use level of polyisocyanate compounds being set as to 0.5 mass parts, be similarly prepared into adhesive composition H with adhesive composition G.
(adhesive composition I)
Except the use level of the 2-methacryloxyethyl isocyanates reacting with acrylic acid series copolymer being set as to 0.6 mass parts, similarly prepared adhesive composition I with adhesive composition G.
< substrate sheets >
As substrate sheets, prepared following J～L.
(substrate sheets J)
Utilize twin shaft muller, at approximately 200 ℃, make ethylene-methyl methacrylate-(acrylic acid 2-methyl-propyl ester)-Zn++ ionomer resin (Du Pont-Mitsui Polychemicals Co., Ltd. system, trade name High Milan AM7316) carry out thin film extrusion forming, and manufactured the substrate sheets J of thickness 100 μ m.
(substrate sheets K)
Utilize twin shaft muller, at approximately 200 ℃, make ethylene-vinyl acetate copolymer (Nippon Unicar Company Limited system, trade name NUC-3758) carry out thin film extrusion forming, and manufactured the substrate sheets K of thickness 100 μ m.
(substrate sheets L)
Prepared to contain with respect to Corvic 100 mass parts is the PVC sheets (thickness 100 μ m) of the dioctyl phthalate of 30 mass parts.
The making > of adhesive tape for the cutting of < radiation-curing type
As shown in table 1 and table 2, so that dried thickness reaches respectively the mode of 20 μ m, above-mentioned adhesive composition A～I is coated to each substrate sheets J～L, form adhesive phase, and manufactured the radiation-curing type cutting adhesive tape of embodiment 1,3～9, comparative example 1,2.In addition, so that dried thickness reaches the mode of 25 μ m, coat binding composition A, forms adhesive phase, and has manufactured the radiation-curing type cutting adhesive tape of embodiment 2.
The Young's modulus of < adhesive tape compares >
Use the radiation-curing type cutting adhesive tape of embodiment 1～9 and comparative example 1,2, according to JIS K7127/2/300, make test film and implement tension test, calculate the Young's modulus of ultraviolet pre-irradiation.In addition, the substrate sheets side of autoadhesion girdle tests test portion is irradiated 200mJ/mm
2ultraviolet ray, after adhesive phase is solidified, implement same test, calculate ultraviolet postradiation Young's modulus.The result of the test of arbitrary test is the mean value of measuring number n=5.By these results, calculate Young's modulus than ((ultraviolet ray is irradiated rear)/(ultraviolet pre-irradiation)).Its result is as shown in table 1 and table 2.
The viscoplasticity > of < adhesive phase
So that dried thickness reaches respectively the mode of 20 μ m, adhesive composition A～I is coated on mould release film, form after adhesive phase, from mould release film release adhesive layer, so that gross thickness is about the mode of 2mm, carried out overlappingly, make test piece.This test piece is die-cut into the discoid of diameter 8mm, with parallel blade, is clamped, use determination of viscoelasticity device (TA Instruments company system, trade name ARES), with following condition, measure.From the maximum of obtained data record storage elastic modulus G ' and the minimum value of minimum value and loss coefficient tan δ.Its result is as shown in table 1 and table 2.
(condition determination)
Measure temperature: 23～80 ℃
Programming rate: 5 ℃/min
Measure frequency: 0.15Hz
The evaluation > of adhesive tape for the cutting of < radiation-curing type
Prepared to be formed with 100 μ m intervals the bulbous protrusion thing 5 (with reference to Fig. 2) of diameter 10 μ m, 8 inches, the Si wafer of thickness 30 μ m.Then, the radiation-curing type cutting of embodiment 1～8 and comparative example 1,2 is fitted together with ring stand (ring frame) with adhesive tape.
(imbedibility evaluation)
With visual radiation-curing type cutting from laminating, with the top of bonding zone face, observe bulbous protrusion thing and have or not bubble around.Bubble-free situation is set as to " ◎ ", is that situation below 10 μ m is set as " zero " by Air Bubble Size, and the situation that Air Bubble Size is greater than to 10 μ m is set as " * ".Its result is as shown in table 1 and table 2.
(the rheological parameters' change with time evaluation after laminating)
After laminating, in the upper placement of cutting card casket (cassette), after 1 hour, implement the evaluation same with evaluating imbedibility.To compare with imbedibility evaluation and not have vicissitudinous situation to be set as " zero ", be that situation below 5 μ m is set as " △ " by the enlarging amplitude of bubble size, and the situation that the enlarging amplitude of bubble size is greater than to 5 μ m is set as " * ".Its result is as shown in table 1 and table 2.
Then, use cutter sweep (DISCO Co., Ltd. system, trade name DAD-340), as shown in Figure 2, so that the size of chip 4 reaches the square mode of 10mm, with following condition, implemented cutting.In addition, bulbous protrusion thing 5 forms as shown in Figure 2, and is not formed on Cutting Road (scribe line).
(cutting condition)
Blade: DISCO Co., Ltd. system " 27HECC "
Rotating speed of flail: 40000rpm
Cutting speed: 50mm/sec
Depth of cut: 25 μ m
Cut mode: cutting downwards
(pick evaluation)
From the cutting of radiation-curing type, by the substrate sheets side of adhesive tape, irradiate 200mJ/mm
2ultraviolet ray, after adhesive phase is solidified, use chip pickup apparatus (Canon Machinery Co., Ltd. system, trade name CAP-300II) to pick up the chip of singualtion.50 chips pick up with following condition A and condition B arbitrarily, calculate the chip-count of successfully picking up, the situation of successfully picking up whole 50 chips is set as to " zero ", the situation of successfully picking up 45～49 semiconductor chips is set as to " △ ", be set as in addition " * ", evaluated thus pick.Its result is as shown in table 1 and table 2.In addition, pick up failure and refer to situation about cannot peel off and the situation of bringing crackle on the chip picking up into.
(pickup conditions A)
Pin number: 5
The interval of pin: 7.8 * 7.8mm
Needle tip curvature: 0.25mm
Top amount: 0.30mm on pin
(pickup conditions B)
Pin number: 5
The interval of pin: 7.8 * 7.8mm
Needle tip curvature: 0.25mm
Top amount: 0.40mm on pin
(disruptiveness evaluation)
With the inside of 30 chips of taking of observation by light microscope, measure the size of breaking in disruptiveness evaluation.To from chip front end to the innermost distance of breaking, be that situation below 5 μ m is set as " zero ", the situation that is 6～15 μ m to the innermost distance of breaking from chip front end is set as to " △ ", will be set as " * " from chip front end to the situation that the innermost distance of breaking is greater than 15 μ m.Its result is as shown in table 1 and table 2.
[table 1]
[table 2]
As shown in table 1 and table 2, the scope that the ratio of the radiation-curing type of embodiment 1～9 cutting Young's modulus before radiation-curing with respect to it of the Young's modulus after radiation-curing with adhesive tape is 1.0～1.8, so the pick of condition B is good.Especially in embodiment 1～4, due to the monomer that uses ethyl acrylate, butyl acrylate, acrylic acid methoxyl group ethyl ester as formation base polymer, even therefore and pick little in the upper top of pin amount comparatively under the condition A of difficulty pick also good.In embodiment 5～9, due to the monomer that does not use ethyl acrylate, butyl acrylate, acrylic acid methoxyl group ethyl ester as formation base polymer, therefore under condition A, produce the chip that picks up failure, but in the generation ratio of allowed band.On the other hand, the ratio of the radiation-curing type of comparative example 1,2 cutting Young's modulus Young's modulus before radiation-curing with respect to it after radiation-curing with adhesive tape surpasses 1.8, therefore under condition A, B, all cannot pick up well.
In addition, for the radiation-curing type cutting of embodiment 1～6, with for adhesive tape, the storage elastic modulus G ' of adhesive phase before radiation-curing is 1.8 * 10
4～4.7 * 10
4pa, the loss coefficient tan δ before the radiation-curing of adhesive phase is 0.25～0.35, so the rheological parameters' change with time after imbedibility, disruptiveness, laminating is all good.On the other hand, for the radiation-curing type cutting of embodiment 7, with for adhesive tape, due to adhesive phase, the storage elastic modulus G ' before radiation-curing is 4.7 * 10
4pa, therefore compares with adhesive tape with the radiation-curing type cutting of embodiment 1～6, and imbedibility variation and disruptiveness reduce, but in allowed band.In addition, for the radiation-curing type cutting of embodiment 8, with for adhesive tape, due to adhesive phase, the storage elastic modulus G ' before radiation-curing is 1.8 * 10
4, therefore compare with adhesive tape with the radiation-curing type cutting of embodiment 1～6, disruptiveness variation, but in allowed band.In addition, for the radiation-curing type cutting of embodiment 9 with for adhesive tape, due to adhesive phase, the loss coefficient tan δ before radiation-curing is 0.20, therefore compare with adhesive tape with the radiation-curing type cutting of embodiment 1～6, because the rheological parameters' change with time after laminating produces, wafer floats and disruptiveness reduces, but in allowed band.
Symbol description
1: radiation-curing type cutting adhesive tape
2: substrate sheets
3: adhesive phase
4: chip
5: bulbous protrusion thing
Claims (5)
1. a radiation-curing type cutting adhesive tape, is characterized in that, it is the radiation-curing type adhesive tape that is provided with radiation-curing type adhesive phase in substrate sheets,
The ratio of its Young's modulus after radiation-curing Young's modulus before radiation-curing with respect to it is that the Young's modulus before the Young's modulus/radiation-curing after radiation-curing is 1.0～1.8.
2. radiation-curing type cutting adhesive tape according to claim 1, is characterized in that, the storage elastic modulus G ' of described adhesive phase before radiation-curing is 1.8 * 10
4～4.7 * 10
4pa.
3. radiation-curing type cutting adhesive tape according to claim 1 and 2, is characterized in that, the loss coefficient tan δ of described adhesive phase before radiation-curing is 0.20～0.35.
4. according to the radiation-curing type cutting adhesive tape described in any one in claim 1～3, it is characterized in that, it uses when cutting semiconductor chip.
5. radiation-curing type cutting adhesive tape according to claim 4, is characterized in that, described semiconductor wafer the mask with the laminating of described adhesive phase have thrust or section poor.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012214776A JP5294365B1 (en) | 2012-09-27 | 2012-09-27 | Radiation curable adhesive tape for dicing |
| JP2012-214776 | 2012-09-27 | ||
| PCT/JP2013/075561 WO2014050763A1 (en) | 2012-09-27 | 2013-09-20 | Radiation-curing adhesive tape for dicing |
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| Publication Number | Publication Date |
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| CN104081500A true CN104081500A (en) | 2014-10-01 |
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ID=49396754
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| CN201380007115.7A Pending CN104081500A (en) | 2012-09-27 | 2013-09-20 | Radiation-curing adhesive tape for dicing |
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| Country | Link |
|---|---|
| JP (1) | JP5294365B1 (en) |
| KR (1) | KR101487148B1 (en) |
| CN (1) | CN104081500A (en) |
| TW (1) | TWI500735B (en) |
| WO (1) | WO2014050763A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107078037A (en) * | 2015-03-02 | 2017-08-18 | 琳得科株式会社 | The manufacture method of cutting sheet and semiconductor chip |
| CN110582839A (en) * | 2017-12-27 | 2019-12-17 | 古河电气工业株式会社 | Radiation-curable adhesive tape for dicing |
| CN111876095A (en) * | 2017-09-28 | 2020-11-03 | 日东电工株式会社 | Reinforced film |
| CN112585742A (en) * | 2018-08-08 | 2021-03-30 | 琳得科株式会社 | Terminal protection tape and method for manufacturing semiconductor device with electromagnetic wave shielding film |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6129541B2 (en) * | 2012-12-17 | 2017-05-17 | リンテック株式会社 | Dicing sheet |
| JP6310492B2 (en) * | 2016-03-31 | 2018-04-11 | 古河電気工業株式会社 | Electronic device packaging tape |
| JP6615223B2 (en) * | 2016-03-31 | 2019-12-04 | 古河電気工業株式会社 | Adhesive sheet for semiconductor processing |
| JP6804860B2 (en) * | 2016-04-05 | 2020-12-23 | パナック株式会社 | Manufacturing method of carrier sheet and cutting member |
| JP7301053B2 (en) * | 2018-08-08 | 2023-06-30 | リンテック株式会社 | Terminal protection tape and method for manufacturing semiconductor device with electromagnetic wave shielding film |
| JP2020125371A (en) * | 2019-02-01 | 2020-08-20 | 日東電工株式会社 | Adhesive sheet |
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- 2013-09-20 KR KR1020147021317A patent/KR101487148B1/en active IP Right Grant
- 2013-09-20 CN CN201380007115.7A patent/CN104081500A/en active Pending
- 2013-09-20 WO PCT/JP2013/075561 patent/WO2014050763A1/en active Application Filing
- 2013-09-27 TW TW102135066A patent/TWI500735B/en active
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| CN101903983A (en) * | 2007-12-18 | 2010-12-01 | 古河电气工业株式会社 | The processing method of adhesive sheet for bonding wafer and wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107078037A (en) * | 2015-03-02 | 2017-08-18 | 琳得科株式会社 | The manufacture method of cutting sheet and semiconductor chip |
| CN107078037B (en) * | 2015-03-02 | 2020-08-14 | 琳得科株式会社 | Dicing sheet and method for manufacturing semiconductor chip |
| CN111876095A (en) * | 2017-09-28 | 2020-11-03 | 日东电工株式会社 | Reinforced film |
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| CN110582839A (en) * | 2017-12-27 | 2019-12-17 | 古河电气工业株式会社 | Radiation-curable adhesive tape for dicing |
| CN110582839B (en) * | 2017-12-27 | 2023-06-06 | 古河电气工业株式会社 | Radiation-curable adhesive tape for dicing |
| CN112585742A (en) * | 2018-08-08 | 2021-03-30 | 琳得科株式会社 | Terminal protection tape and method for manufacturing semiconductor device with electromagnetic wave shielding film |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI500735B (en) | 2015-09-21 |
| KR20140099337A (en) | 2014-08-11 |
| TW201420714A (en) | 2014-06-01 |
| WO2014050763A1 (en) | 2014-04-03 |
| JP2014072221A (en) | 2014-04-21 |
| JP5294365B1 (en) | 2013-09-18 |
| KR101487148B1 (en) | 2015-01-28 |
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