CN104064631A - 降低超导纳米线单光子探测器件非本征暗计数的方法及器件 - Google Patents
降低超导纳米线单光子探测器件非本征暗计数的方法及器件 Download PDFInfo
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- CN104064631A CN104064631A CN201410334717.XA CN201410334717A CN104064631A CN 104064631 A CN104064631 A CN 104064631A CN 201410334717 A CN201410334717 A CN 201410334717A CN 104064631 A CN104064631 A CN 104064631A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
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CN201410334717.XA CN104064631B (zh) | 2014-07-15 | 2014-07-15 | 降低超导纳米线单光子探测器件非本征暗计数的方法及器件 |
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CN201410334717.XA CN104064631B (zh) | 2014-07-15 | 2014-07-15 | 降低超导纳米线单光子探测器件非本征暗计数的方法及器件 |
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CN104064631A true CN104064631A (zh) | 2014-09-24 |
CN104064631B CN104064631B (zh) | 2016-08-31 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106549098A (zh) * | 2015-09-17 | 2017-03-29 | 中国科学院上海微系统与信息技术研究所 | 窄带吸收超导纳米线单光子探测器 |
CN108666388A (zh) * | 2017-03-31 | 2018-10-16 | 中国科学院上海微系统与信息技术研究所 | 集成光学薄膜滤波器的超导纳米线单光子探测器 |
CN108735851A (zh) * | 2017-04-19 | 2018-11-02 | 中国科学院上海微系统与信息技术研究所 | 可降低恢复时间的超导纳米线单光子探测器件及制作方法 |
CN109659386A (zh) * | 2018-12-06 | 2019-04-19 | 中国科学院上海微系统与信息技术研究所 | 多光谱超导纳米线单光子探测器 |
CN110931628A (zh) * | 2019-11-14 | 2020-03-27 | 天津大学 | 一种工作在双波段的超导纳米线单光子探测器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20070004928A (ko) * | 2004-03-31 | 2007-01-09 | 오스람 옵토 세미컨덕터스 게엠베하 | 방사선 검출기 |
WO2010081522A1 (en) * | 2009-01-14 | 2010-07-22 | Universiteit Leiden | Thin-film radiation detector |
CN102829884A (zh) * | 2012-09-10 | 2012-12-19 | 清华大学 | 具有强吸收结构的高速snspd及其制备方法 |
CN103840035A (zh) * | 2014-03-20 | 2014-06-04 | 中国科学院上海微系统与信息技术研究所 | 降低纳米线单光子探测器件非本征暗计数的方法及器件 |
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2014
- 2014-07-15 CN CN201410334717.XA patent/CN104064631B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070004928A (ko) * | 2004-03-31 | 2007-01-09 | 오스람 옵토 세미컨덕터스 게엠베하 | 방사선 검출기 |
WO2010081522A1 (en) * | 2009-01-14 | 2010-07-22 | Universiteit Leiden | Thin-film radiation detector |
CN102829884A (zh) * | 2012-09-10 | 2012-12-19 | 清华大学 | 具有强吸收结构的高速snspd及其制备方法 |
CN103840035A (zh) * | 2014-03-20 | 2014-06-04 | 中国科学院上海微系统与信息技术研究所 | 降低纳米线单光子探测器件非本征暗计数的方法及器件 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106549098A (zh) * | 2015-09-17 | 2017-03-29 | 中国科学院上海微系统与信息技术研究所 | 窄带吸收超导纳米线单光子探测器 |
CN106549098B (zh) * | 2015-09-17 | 2019-12-31 | 中国科学院上海微系统与信息技术研究所 | 窄带吸收超导纳米线单光子探测器 |
CN108666388A (zh) * | 2017-03-31 | 2018-10-16 | 中国科学院上海微系统与信息技术研究所 | 集成光学薄膜滤波器的超导纳米线单光子探测器 |
CN108735851A (zh) * | 2017-04-19 | 2018-11-02 | 中国科学院上海微系统与信息技术研究所 | 可降低恢复时间的超导纳米线单光子探测器件及制作方法 |
CN108735851B (zh) * | 2017-04-19 | 2019-11-19 | 中国科学院上海微系统与信息技术研究所 | 可降低恢复时间的超导纳米线单光子探测器件及制作方法 |
CN109659386A (zh) * | 2018-12-06 | 2019-04-19 | 中国科学院上海微系统与信息技术研究所 | 多光谱超导纳米线单光子探测器 |
CN110931628A (zh) * | 2019-11-14 | 2020-03-27 | 天津大学 | 一种工作在双波段的超导纳米线单光子探测器 |
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Address after: 314100 floor 2, No. 11, Guigu Second Road, Luoxing street, Jiashan County, Jiaxing City, Zhejiang Province Patentee after: Futong quantum technology (Zhejiang) Co.,Ltd. Address before: 314000 2F, No. 11, Guigu Second Road, Luoxing street, Jiashan County, Jiaxing City, Zhejiang Province Patentee before: ZHEJIANG PHOTON TECHNOLOGY Co.,Ltd. |
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