Background technology
Organic light emitting apparatus utilize electrically excited organic fluorescent compounds to light, and it has negative electrode and anode, in the middle of the two
By the organic membrane being made up of organic compound.When to applied voltage on negative electrode, anode, apply in the electrode of positive voltage, hole
Organic luminous zone is moved to by hole transmission layer (HTL), applies in the electrode of negative voltage, electronics passes through electron transfer layer
(ETL) move to organic luminous zone, hole and electronics occur compound generation exciton in organic luminous zone, and exciton is sent out after being excited
Go out light, showing for OLED provides light source.
The characteristic of OLED is that oneself lights, unlike TFT LCD needs backlight, therefore visibility and brightness all high, next to that
Voltage requirements are low and power saving efficiency is high, add fast, the lightweight, thickness of thin of reaction, simple structure, cost is low, is considered 21 generation
Discipline most one of product of future.
In general, OLED can be divided into two kinds by luminescent material:Small molecule OLED and macromolecule OLED are (alternatively referred to as
PLED).The material of organic luminous zone must possess and have under solid-state that stronger fluorescent, carrier transportation performance be good, heat stability and chemistry are steady
Qualitative good, quantum efficiency is high and characteristic that be capable of vacuum evaporation, and the materials'use of general organic luminous zone is generally and electric transmission
The material that layer or electric hole transport layer are adopted is identical, and such as Alq is widely used in green glow, Balq and DPVBi is then widely used
In blue light.
The type of drive of OLED is divided into active driving (AMOLED) and passive type to drive (PMOLED).Wherein, active drive
Each dynamic pixel is equipped with the low-temperature polysilicon film transistor (LTP-Si TFT) with switching function, in actual production,
Due to the impact of the factors such as TFT leakage current, OLED sub-pixel luminence can be led to excessive, thus producing bright spot.In prior art
The sub-pixel bright spot in sub-pixel OLED is often processed using the method cut or block, but in implementation process, technique
Complexity, also can affect aperture opening ratio and the yield of device.
Specific embodiment
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, real below in conjunction with the present invention
Apply the accompanying drawing in example, the technical scheme in the embodiment of the present invention is clearly and completely described it should be apparent that, retouch below
Accompanying drawing in stating is only several embodiments of the present invention, and not all embodiments, based on the embodiment in the present invention, ability
The every other embodiment that domain those of ordinary skill is obtained under the premise of not making creative work, broadly falls into the present invention and protects
The scope of shield.
Fig. 1 is OLED dot structure sectional view, and substrate 100 includes thin film transistor (TFT) (TFT) 110, and thin film is brilliant
First electrode 105 is formed with body pipe, first electrode 105 can do the anode of OLED device, has pixel above first electrode 105
Definition layer 109, has organic membrane 107 above pixel defining layer 109, (in figure is not shown to comprise organic luminous zone 104 in organic membrane 107
Go out), organic luminous zone 104 is arranged between two neighboring pixel defining layer.There is above organic membrane 107 second electrode 106, the
Two electrodes 106 can be used as the negative electrode of OLED device.Under the collective effect of first electrode 105 and second electrode 106, organic membrane
107 can produce luminous, thus realize display effect.Organic membrane 107 can be paved into whole face (as shown in the figure) it is also possible to be only arranged at
Between two neighboring pixel defining layer.Fig. 2 is OLED dot structure top view, comprises multiple sub-pixels in OLED device,
Gate line 101 is intersected with data wire 102 insulation, surrounds a sub-pixel.Power transmission line (PVDD) 103, sets parallel to data wire 102
Put, for controlling OLED brightness.Organic luminous zone 104 comprises the first sub- organic luminous zone 104a, the second sub- organic light emission
Area 104b, the 3rd sub- organic luminous zone 104c, the organic membrane of three sub- organic luminous zone is made using different organic materials, typically
For, this organic material belongs to fluorescent material or phosphor material, under negative electrode, the exciting of anode voltage, three sub- organic light emissions
Area sends the light of different wave length, and the such as first sub- organic luminous zone 104a glows, the second sub- organic luminous zone 104b green light,
3rd sub- organic luminous zone 104c blue light-emitting.
Fig. 3 is one embodiment of the present of invention, specifically comprises:The sub-pixel position that in positioning panel, bright spot is located;Use
The organic luminous zone of UV light irradiation bright spot place sub-pixel.OLED luminous source device luminescent layer adopts Organic substance to form,
Under the irradiation of UV light irradiation, complicated photosynthetic response, light photoreaction etc. can be produced, lead to luminescent layer organic molecule structure to occur to divide
Solution, oxidation and rearrangement, and then reduce OLED luminous efficiency, so that pixel intensity is reduced.The present invention according to OLED Organic substance this
Characteristic, is affected for the luminous efficiency of Organic substance using UV light, repairs the fleck defect of oled panel.
Bright spot can be divided into two kinds, and a kind of is abnormal bright spot under white picture, it be due in technique etching etching not exclusively,
The reason such as TFT technique is bad, produces what the phenomenon of TFT leakage current caused, in this case, during by controlling UV energy, irradiating
Between, the luminous efficiency of organic luminous zone can be reduced, cancel out each other with TFT leakage current effect so that bright spot sub-pixel and normal-sub
Pixel sends the light of same brightness.This method is different from traditional method, directly eliminates the luminance of bright spot sub-pixel, is allowed to
Become dim spot, but by controlling its luminous efficiency, the reparation bad sub-pixel of bright spot is " normal " sub-pixel, greatly improves product
Yield.Bright spot under black picture during another bright spot, this is the leakage current causing because TFT lost efficacy, because TFT cannot
The size of control electric current is it is therefore necessary to by increasing UV photo-irradiation intensity, irradiation time, luminous by whole sub-pixel is reduced to
Below threshold value, that is, sub-pixel is adjusted to dark-state, thus eliminating bright spot.
Alternatively, UV optical wavelength range is 365nm-405nm, this be due to for OLED macromolecular material for
The UV photosensitivity of this wave band is the strongest, the less light of wavelength, and energy is stronger.Alternatively, for irradiating the UV light intensity of bright spot
It is 5000mj/cm2-8000mj/cm2If light intensity is too little, expected impact can not be produced it is impossible to reduce OLED to Organic substance
Device light emitting efficiency, thus bright spot cannot be eliminated, if light intensity is excessive, can be excessive because of energy, produce energy sputter effect, calamity
And to neighbouring normal sub-pixel unit.Alternatively, the time using described UV light irradiation bright spot place sub-pixel is 10s-
50s, irradiation time is too short, and the impact for OLED luminous efficiency is effective, eliminates the effect on driving birds is not good of bright spot, irradiation time mistake
Long, then can be excessive due to energy, produce energy sputter effect, bring disaster to neighbouring normal sub-pixel unit.
Upper table is the experimental data that irradiation condition affects for bright spot repairing effect, as can be seen from the table, irradiation energy
To bright spot repairing effect, there is conclusive influence factor, wherein, wavelength is longer, and energy is less;Irradiation energy is bigger, and energy is got over
Greatly;Irradiation time is longer, and energy is bigger.If irradiation energy is too low, repairing effect can be caused not good, if energy is excessive, meeting
To periphery, normal sub-pixel impacts.Through it is demonstrated experimentally that for the bright spot under white picture, combining 4- combination 7 for reparation
Bright spot has optimum efficiency.And for the bright spot under black picture, then can adopt combination 1, combination 1 is the maximum feelings of UV light energy
Condition, to the bright spot repaired under black picture effectively, if energy is more than the energy of combination 1, normal sub-pixel can produce to periphery
Impact.
Fig. 4 is one embodiment of the present of invention.Specifically comprise:The sub-pixel position that in positioning panel, bright spot is located;Using
Mask plate blocks the panel zone outside the sub-pixel of bright spot place;Organic light emission using UV light irradiation bright spot place sub-pixel
Area.In the present embodiment, blocked by mask plate, normal sub-pixel can be prevented by UV light irradiation, reduce method efficiency, thus
Produce dim spot bad phenomenon.Refer to Fig. 5 and Fig. 6, in Fig. 5, anode 205 is provided with substrate 200, sets above anode 205
It is equipped with three sub- organic luminous zone, be that the first sub- organic luminous zone 204a, the second sub- organic luminous zone 204b, the 3rd son have respectively
Machine luminous zone 204c, is provided with negative electrode 206 above organic luminous zone.It is provided with mask plate 208 above negative electrode 206.For example, this reality
Apply in example, after positioning step, confirm that the sub-pixel that bright spot is located is the second organic luminous zone 204b, then by mask plate 208
It is arranged above the first organic luminous zone 204a and the 3rd organic luminous zone 204c, for blocking the UV light that light source 230 sends
220, such UV light can only reach the organic luminous zone of bright spot place sub-pixel, i.e. the second sub- organic luminous zone, through UV light
Irradiating, reducing the luminous efficiency of the second sub- organic luminous zone, thus eliminating bright spot.Alternatively, the material of mask plate 208 is UV light
The low material of transmitance, alternatively, the material of mask plate is metal.
The first above-mentioned sub- organic luminous zone 104a (204a) of application documents, the second sub- organic luminous zone 104b (204b),
3rd sub- organic luminous zone 104c (204c) constitutes a pixel.In implementation process of the present invention, for the bright spot of black picture, if
The sub-pixel only bright spot being located is irradiated, and easily forms colour cast, for example, the first sub- organic luminous zone 104a (204a) is rubescent
Light, the second sub- organic luminous zone 104b (204b) green light, the 3rd sub- organic luminous zone 104c (204c) blue light-emitting.If bright spot is sent out
Give birth in the 3rd sub- organic luminous zone 104c (204c), when using UV light irradiation the 3rd sub- organic luminous zone 104c (204c),
3rd sub- organic luminous zone 104c (204c) is directly broken into dim spot, then can make whole picture jaundice.Therefore, the one of the present invention
In individual embodiment, alternatively, while irradiating sub- organic luminous zone that bright spot is located, together irradiate in the affiliated pixel of this sub-pixel
Other two sub- organic luminous zone, i.e. the first sub- organic luminous zone 104a (204a) and the second sub- organic luminous zone 104b
(204b), make three sub-pixels all become dim spot, alternatively, bright spot place pixel is blocked using mask plate in UV light irradiation simultaneously
Outside panel zone.And the bright spot for white picture, alternatively, UV light only irradiates the sub- organic light emission of bright spot place sub-pixel
Area, makes three sub-pixels reach the luminance of same intensity, alternatively, blocks bright spot institute using mask plate in UV illumination simultaneously
Panel zone outside sub-pixel, to prevent from affecting normal pixel.It should be noted that irradiating other two sub- organic light emissions
The step in area can also complete before or after irradiating sub- organic luminous zone step that bright spot is located.
Fig. 7 is an embodiment of the invention.In Fig. 7, it is provided with anode 305 on the substrate 300, negative electrode 306, and
It is arranged on the organic luminous zone 304 between anode 305 and negative electrode 306, organic luminous zone 304 comprises the first sub- organic luminous zone
304a, the second sub- organic luminous zone 304b, the 3rd sub- organic luminous zone 304c.The light source 330 adopting in the present embodiment is is light
Speckle size is adjustable.For example, in the present embodiment, after positioning step, confirm that the sub-pixel that bright spot is located is second organic
Light area 304b, then adjust the size of the hot spot of light source 330 to a sub-pixel organic luminous zone, and irradiate the second organic luminous zone
304b, through the irradiation of UV light, reduces the luminous efficiency of the second organic luminous zone, thus eliminating bright spot.This method does not need
Directional illumination bright spot place sub-pixel just can be realized using mask plate, not interfere with the luminous efficiency of other normal sub-pixels,
Simple and easy to do.Alternatively, light source 330 is LASER Light Source, and laser facula is little, is applied to the present invention and can achieve accurate para-position.
Refer to Fig. 8, in the present invention, " sub-pixel position that in positioning panel, bright spot is located " can be real by the following method
Existing:Oled panel is lighted;Oled panel is made to show black picture or white picture;Determine the coordinate of bright spot place sub-pixel.Wherein,
Oled panel is lighted can be by being connected oled panel, by signal with flexible PCB (FPC) and signal generator
Generator controls the picture of oled panel.For the bright spot in black picture, subsequently through UV light irradiation, make bright spot and black picture one
Cause.For the bright spot in white picture, subsequently through UV light irradiation, it is that bright spot is consistent with white picture brightness.
Compared with the present invention eliminates the method for bright spot with prior art using heat energy, there is following benefit:Shone using heat energy
When penetrating bright spot, because the energy of heat is big, the normal sub-pixel of periphery can be caused sputter.Hide with adopting ink-jet in prior art
Gear method is compared, and without ink-jet apparatus, does not interfere with device opening rate.
Can be used in conjunction with one another between above example described by present specification.
Obviously, those skilled in the art can carry out the various changes and modification essence without deviating from the present invention to the present invention
God and scope.So, if these modifications of the present invention and modification belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprise these changes and modification.