Background technology
Organic light emitting apparatus utilizes electrically excited organic fluorescent compounds luminous, and it has negative electrode and anode, and the two is middle by the organic film being comprised of organic compound.When applying voltage on negative electrode, anode, apply in the electrode of positive voltage, hole moves to organic luminous zone by hole transmission layer (HTL), apply in the electrode of negative voltage, electronics moves to organic luminous zone by electron transfer layer (ETL), there is compound generation exciton in hole and electronics, after exciton is excited, send light in organic luminous zone, for OLED shows, provides light source.
The characteristic of OLED is own luminous, unlike TFT LCD, need backlight, so visibility and brightness all high, next is that voltage requirements is low and province's electrical efficiency is high, adds fast, lightweight, the thin thickness of reaction, simple structure, cost is low etc., is regarded as one of product of tool future of 21 century.
Generally speaking, OLED can be divided into two kinds by luminescent material: little Molecule OLEDs and macromolecule OLED (also can be described as PLED).The material of organic luminous zone must possess and have stronger fluorescent under solid-state, carrier transmission performance is good, thermal stability and chemical stability is good, quantum efficiency is high and characteristic that can vacuum evaporation, the material that the materials'use of general organic luminous zone adopts with electron transfer layer or electric hole transport layer is conventionally identical, for example Alq is widely used in green glow, and Balq and DPVBi are widely used in blue light.
The type of drive of OLED is divided into active driving (AMOLED) and passive type drives (PMOLED).Wherein, each pixel of active driving is equipped with the low-temperature polysilicon film transistor (LTP-Si TFT) with switching function, and in actual production, the impact due to factors such as TFT leakage currents, can cause the brightness of OLED device sub-pixel excessive, thereby produces bright spot.In prior art, the normal way of using cutting or blocking is processed the sub-pixel bright spot in sub-pixel OLED device, but in implementation process, and complex process also can affect aperture opening ratio and the yield of device.
Embodiment
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art; below in conjunction with the accompanying drawing in the embodiment of the present invention; technical scheme in the embodiment of the present invention is clearly and completely described; apparently; accompanying drawing in the following describes is only several embodiment of the present invention; and not all embodiments; embodiment based in the present invention; those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Fig. 1 is OLED device dot structure sectional view, on substrate 100, include thin-film transistor (TFT) 110, on thin-film transistor, be formed with the first electrode 105, the first electrode 105 can be done the anode of OLED device, there is pixel defining layer 109 the first electrode 105 tops, there is organic film 107 pixel defining layer 109 tops, comprise organic luminous zone 104 (not shown)s in organic film 107, and organic luminous zone 104 is arranged between adjacent two pixel defining layer.Organic film 107 tops have the negative electrode that the second electrode 106, the second electrodes 106 can be used as OLED device.Under the acting in conjunction of the first electrode 105 and the second electrode 106, organic film 107 can produce luminous, thereby realizes demonstration effect.Organic film 107 can be paved into whole (as shown in the figure), also can only be arranged between adjacent two pixel defining layer.Fig. 2 is OLED device dot structure vertical view, comprises a plurality of sub-pixels in OLED device, and gate line 101 intersects with data wire 102 insulation, surrounds a sub-pixel.Power transmission line (PVDD) 103, is parallel to data wire 102 and arranges, for controlling OLED device brightness.Organic luminous zone 104 comprises the first sub-organic luminous zone 104a, the second sub-organic luminous zone 104b, the 3rd sub-organic luminous zone 104c, the organic film of three sub-organic luminous zone adopts different organic materials to make, in general, this organic material belongs to fluorescent material or phosphor material, under the exciting of negative electrode, anode voltage, three sub-organic luminous zone are sent the light of different wave length, for example the first sub-organic luminous zone 104a glows, the second sub-organic luminous zone 104b green light, the 3rd sub-organic luminous zone 104c blue light-emitting.
Fig. 3 is one embodiment of the present of invention, specifically comprises: the sub-pixel position at bright spot place in positioning panel; Use the organic luminous zone of UV irradiation bright spot place sub-pixel.OLED device light emitting source device luminescent layer adopts organic substance to form, under the light-struck irradiation of UV, can produce complicated photosynthetic response, light light reaction etc., cause luminescent layer organic molecule structure decompose, be oxidized and reset, and then reduce OLED luminous efficiency, pixel intensity is reduced.The present invention, according to organic this characteristic of OLED, utilizes UV light to affect for organic luminous efficiency, repairs the fleck defect of oled panel.
Bright spot can be divided into two kinds, a kind of is abnormal bright spot under white picture, it is due to reasons such as etching etching in technique are incomplete, TFT technique is bad, the phenomenon of generation TFT leakage current causes, for this situation, by controlling UV energy, irradiation time, can reduce the luminous efficiency of organic luminous zone, cancel out each other with TFT leakage current effect, make bright spot sub-pixel and normal-sub pixel send the light of same brightness.This method is different from conventional method, directly eliminates the luminance of bright spot sub-pixel, makes it to become dim spot, but by controlling its luminous efficiency, repairing the bad sub-pixel of bright spot is " normally " sub-pixel, greatly improves the yield of product.Bright spot during another bright spot under black picture, this is the leakage current that lost efficacy and cause due to TFT, size due to the uncontrollable electric current of TFT, therefore must be by strengthening UV irradiation intensity, irradiation time, the luminous of whole sub-pixel is reduced to below threshold value, namely sub-pixel is adjusted to dark state, thereby eliminates bright spot.
Alternatively, UV optical wavelength range is 365nm-405nm, and this is because the macromolecular material for OLED device is the strongest for the UV photosensitivity of this wave band, the light that wavelength is less, and energy is stronger.Alternatively, for irradiating the UV luminous intensity of bright spot, be 5000mj/cm
2-8000mj/cm
2if light intensity is too little, can not on organic substance, produce the impact of expection, OLED device luminous efficiency cannot be reduced, thereby bright spot cannot be eliminated, if light intensity is excessive, can be excessive because of energy, produce power sputter effect, brings disaster to contiguous normal-sub pixel cell.Alternatively, using the time of described UV irradiation bright spot place sub-pixel is 10s-50s, irradiation time is too short, impact for OLED device luminous efficiency is effective, the poor effect of eliminating bright spot, irradiation time is long, can be because energy is excessive, produce power sputter effect, brings disaster to contiguous normal-sub pixel cell.
Upper table is the experimental data that illuminate condition affects for bright spot repairing effect, and as can be seen from the table, irradiation energy has conclusive influencing factor to bright spot repairing effect, and wherein, wavelength is longer, and energy is less; Irradiation energy is larger, and energy is larger; Irradiation time is longer, and energy is larger.If irradiation energy is too low, can cause repairing effect not good, if energy is excessive, can impact periphery normal-sub pixel.Through experiment showed, for the bright spot under white picture, combination 4-combination 7 has optimum efficiency for repairing bright spot.And for the bright spot under black picture, can adopt combination 1, combination 1 is the situation of UV light energy maximum, effective to the bright spot of repairing under black picture, if energy is greater than the energy of combination 1, can exert an influence to periphery normal-sub pixel.
Fig. 4 is one embodiment of the present of invention.Specifically comprise: the sub-pixel position at bright spot place in positioning panel; Adopt mask plate to block the panel zone outside the sub-pixel of bright spot place; Use the organic luminous zone of UV irradiation bright spot place sub-pixel.In the present embodiment, by mask plate, block, can prevent that normal sub-pixel is by UV irradiation, reduction method efficiency, thus produce dim spot bad phenomenon.Please refer to Fig. 5 and Fig. 6, in Fig. 5, on substrate 200, be provided with anode 205, anode 205 tops are provided with three sub-organic luminous zone, be respectively the first sub-organic luminous zone 204a, the second sub-organic luminous zone 204b, the 3rd sub-organic luminous zone 204c, organic luminous zone top is provided with negative electrode 206.Negative electrode 206 tops are provided with mask plate 208.For example, in the present embodiment, after positioning step, confirm that the sub-pixel at bright spot place is the second organic luminous zone 204b, mask plate 208 is arranged to the first organic luminous zone 204a and the 3rd organic luminous zone 204c top, for blocking the UV light 220 that light source 230 sends, UV light can only arrive the organic luminous zone of bright spot place sub-pixel like this, and the second sub-organic luminous zone, passes through the irradiation of UV light, reduce the luminous efficiency of the second sub-organic luminous zone, thereby eliminate bright spot.Alternatively, the material of mask plate 208 is materials that UV light transmission rate is low, and alternatively, the material of mask plate is metal.
Above-mentioned the first sub-organic luminous zone 104a (204a), the second sub-organic luminous zone 104b (204b), the 3rd sub-organic luminous zone 104c (204c) of application documents forms a pixel.In the invention process process, bright spot for black picture, if only the sub-pixel at bright spot place is irradiated, easily form colour cast, for example, the first sub-organic luminous zone 104a (204a) glows, the second sub-organic luminous zone 104b (204b) green light, the 3rd sub-organic luminous zone 104c (204c) blue light-emitting.If bright spot occurs in the 3rd sub-organic luminous zone 104c (204c), when using UV irradiation the 3rd sub-organic luminous zone 104c (204c), the 3rd sub-organic luminous zone 104c (204c) is directly broken into dim spot, can make whole picture jaundice.Therefore, in one embodiment of the invention, alternatively, when irradiating the sub-organic luminous zone in bright spot place, together irradiate other two sub-organic luminous zone in the affiliated pixel of this sub-pixel, the first sub-organic luminous zone 104a (204a) and the second sub-organic luminous zone 104b (204b), make three sub-pixels become dim spot, alternatively, at UV irradiation, adopt mask plate to block the panel zone outside the pixel of bright spot place simultaneously.And for the bright spot of white picture, alternatively, UV light only irradiates the sub-organic luminous zone of bright spot place sub-pixel, make three sub-pixels reach the luminance of same intensity, alternatively, in UV illumination, adopt mask plate to block the panel zone outside the sub-pixel of bright spot place, to prevent from affecting normal pixel simultaneously.It should be noted that, the step of irradiating other two sub-organic luminous zone also can complete before or after irradiating the sub-organic luminous zone step in bright spot place.
Fig. 7 is an embodiment of the invention.In Fig. 7, on substrate 300, be provided with anode 305, negative electrode 306, and be arranged on the organic luminous zone 304 between anode 305 and negative electrode 306, organic luminous zone 304 comprises the first sub-organic luminous zone 304a, the second sub-organic luminous zone 304b, the 3rd sub-organic luminous zone 304c.The light source 330 adopting in the present embodiment is to be that spot size is adjustable.For example, in the present embodiment, after positioning step, the sub-pixel of confirming bright spot place is the second organic luminous zone 304b, adjust the size of hot spot to sub-pixel organic luminous zone of light source 330, and irradiate the second organic luminous zone 304b, through the irradiation of UV light, reduce the luminous efficiency of the second organic luminous zone, thereby eliminate bright spot.This method does not need to adopt mask plate just can realize directional illumination bright spot place sub-pixel, can not affect the luminous efficiency of other normal-sub pixel, simple and easy to do.Alternatively, light source 330 is LASER Light Source, and laser facula is little, is applied to the present invention and can realizes accurate contraposition.
Please refer to Fig. 8, in the present invention, " sub-pixel position at bright spot place in positioning panel " can realize by the following method: oled panel is lighted; Make oled panel show black picture or white picture; Determine the coordinate of bright spot place sub-pixel.Wherein, oled panel is lighted and can, by oled panel is connected with flexible PCB (FPC) and signal generator, be controlled the picture of oled panel by signal generator.For the bright spot in black picture, follow-up by UV irradiation, make bright spot consistent with black picture.For the bright spot in white picture, follow-up by UV irradiation, be that bright spot is consistent with white picture brightness.
The present invention compares with the method that prior art adopts heat energy to eliminate bright spot, has following benefit: while adopting heat energy to irradiate bright spot, because the energy of heat is large, can cause sputter to the normal-sub pixel of periphery.Compare with the available technology adopting ink-jet method of blocking, without ink-jet apparatus, can not affect device opening rate.
The use of can interosculating between the described above embodiment of present specification.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.