CN104064510B - A kind of preparation method of fleet plough groove isolation structure - Google Patents
A kind of preparation method of fleet plough groove isolation structure Download PDFInfo
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- CN104064510B CN104064510B CN201410215749.8A CN201410215749A CN104064510B CN 104064510 B CN104064510 B CN 104064510B CN 201410215749 A CN201410215749 A CN 201410215749A CN 104064510 B CN104064510 B CN 104064510B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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Abstract
The present invention provides a kind of preparation methods of fleet plough groove isolation structure comprising：Bottom dielectric layer nitration case top oxide layer is sequentially formed on a semiconductor substrate, constitutes hard mask layer；Through lithography and etching technique, opening is formed in hard mask layer；Using hard mask layer as mask, shallow ditch groove structure is formed in the semiconductor substrate；The madial wall of the opening of nitration case is gently etched；It carries out cleaning and returns carving technology；By using the cleaning liquid to nitration case with high etching selection ratio, not only nitration case can be carried out back to carve, it can also carry out cleaning, it is carved to complete cleaning and returning for nitration case in a step process, it avoids and carries out nitration case time quarter semiconductor substrate being caused to generate a large amount of defects using traditional phosphoric acid, improve the quality of prepared fleet plough groove isolation structure；Also, processing step compared with the existing methods, is simplified, production efficiency is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of preparation method of fleet plough groove isolation structure.
Background technology
Fleet plough groove isolation structure (STI) is the important feature in semiconductor integrated circuit field, referring to Fig. 1, for tradition
Fleet plough groove isolation structure preparation method flow diagram comprising following steps：
Step L01：Bottom dielectric layer-nitration case-top oxide layer is sequentially formed on a semiconductor substrate, constitutes hard mask
Layer；
Step L02：Through lithography and etching technique, opening is formed in hard mask layer；
Step L03：Using hard mask layer as mask, etch semiconductor substrates form shallow ditch groove structure in the semiconductor substrate；
Step L04：The madial wall of the opening of nitration case is gently etched, to remove the oxidation formed on the madial wall
Film；
This is because in technical process, the sidewall surfaces of nitration case opening can be reacted with water vapour, oxygen etc. generates silica
Nitrogen or Si oxide are similar to oxide, and this oxidation film is covered in the interior side-wall surface of nitration case opening, and nitration case, which returns, to be carved
In technique, used etching liquid does not generate etch rate to oxide, if not by nitration case opening inner side wall surface
Oxidation film is got rid of, and the etching for leading to nitration case can not be smoothed out；Etching technics used by light etching is as a result,
The technique of existing removal oxide, for example, plasma dry etch process etc..
' light etching ' is the technique known to industry, and etch amount is very small, the thickness relative to the film layer etched
Degree can be ignored, and ' light etching ' is commonly used in the surface of cleaning film layer, remove the oxide on surface, stain etc..For example,
Here, the thickness relative to nitration case, top oxide layer, bottom dielectric layer can be ignored, and ' light etching ' is only by nitrogen
The oxidation film removal for changing the madial wall of layer opening, plays the role of cleaning nitration case opening inner side wall surface.
Step L05：Using top oxide layer as mask, nitration case carve using phosphoric acid, to expand opening for nitration case
Mouthful；
Step L06：Carry out cleaning；
Step L07：Top oxide layer is peeled off；
Step L08：Liner oxide film is grown in shallow ditch groove structure and is filled using high-density plasma oxidation film
Shallow ditch groove structure, to form fleet plough groove isolation structure.
In the preparation process of above-mentioned traditional fleet plough groove isolation structure, if being added without nitration case returns carving technology,
In subsequent high-density plasma oxidation film (HDP) fill process, it may appear that two kinds of defects：
I, the corner of STI is readily formed cavity.Since there are a large amount of wet method quarters in integrated circuit fabrication process
The technique for losing oxide layer, which is easy to constantly be expanded.If also having nitration case or polysilicon in subsequent technique
The technique of growth and etching, then in the cavity, the film in the cavity can not almost be carved by nitration case or polysilicon film president
Eating away, to form residue；
II, it is readily formed recess (divot) in the corner of STI, causes the polysilicon film of subsequent growth to take down, very
It is easy to form parasitic circuit.
Therefore, nitration case is added in traditional STI techniques and returns carving technology, can reach and HDP is allowed to be filled into active area
Effect, to be also avoided that cavity generation.But the time that traditional nitration case returns quarter is shorter, such as 3~10min, and
And the controllability of the nitride film of short time time carving technology is poor, for example, only in identical dipper, using phosphoric acid
H3PO4Nitration case is returned and is carved 4 minutes, etching difference is reachableAbove (fromIt arrives), main reason is that：
Usual H3PO4Liquid is in the complete certain batch of operation or can just replace new liquid after a certain period of time, it is this reuse and it is wider
Heating temperature difference (difference be +/- 5 degree), eventually lead to the difference that etching generation of the phosphoric acid to nitration case is larger in the short period
It is different.
In addition, returning carving technology using traditional nitration case, since phosphoric acid is in direct contact silicon substrate, and silicon substrate is often denounceed
Aqueous surface, it is difficult removal in subsequent cleaning to cause phosphoric acid, forms a large amount of defects.Therefore, it is returned in phosphoric acid and carves nitrogen
It is needed to increase by one of processing step after changing layer to remove the defect of surface of silicon, after returning quarter due to phosphoric acid, on a silicon substrate
The ingredient of the defect of generation contains Si, O, seemingly with silica type, it is possible to this kind of lack is removed using the method for removing oxide layer is gone
It falls into；Then it is cleaned again.Such process sequence, undoubtedly increases processing step and cost, affects flow speed.
It can be seen that existing nitration case return carving technology it is unstable, be easy to cause nitration case etching it is uneven, influence institute's shape
At fleet plough groove isolation structure quality, and processing step it is various, influence production efficiency, increase cost.
Invention content
In order to overcome problem above, it is an object of the invention to improve existing nitration case to return carving method, can not only carry
The uniformity of high nitration case etching and the quality for being formed by fleet plough groove isolation structure, additionally it is possible to simplify processing step, improve
Production efficiency.
To achieve the goals above, the present invention provides a kind of preparation methods of fleet plough groove isolation structure comprising：
Bottom dielectric layer-nitration case-top oxide layer is sequentially formed on a semiconductor substrate, constitutes hard mask layer；
Through lithography and etching technique, opening is formed in the hard mask layer；
Using the hard mask layer as mask, the semiconductor substrate is etched, forms shallow trench in the semiconductor substrate
Structure；
The madial wall of the opening of the nitration case is gently etched；
It carries out cleaning and returns carving technology；Wherein, it during being cleaned, using the top oxide layer as mask, adopts
With having the cleaning liquid of high etching selection ratio to the nitration case carve to the nitration case, to expand the nitration case
Opening；
The top oxide layer is peeled off；
Liner oxide film and filling oxidation film are grown in the shallow ditch groove structure, to form the shallow trench
Isolation structure.
Preferably, further include carrying out cleaning again after carrying out the cleaning and returning carving technology.
Preferably, described clean includes with time carving technology：Using H2SO4And H2O2The standard cleaning liquid mixed into
Row cleaning process, while the standard cleaning liquid to the nitration case carve.
Further, the H2SO4With H2O2Volume ratio be (10~1):(1~10).
Preferably, it is 10~30min to carry out the cleaning with the time used by carving technology is returned.
Preferably, the cleaning and the temperature returned employed in carving technology are 100-150 DEG C.
Preferably, it is to the thickness carved that returns of the nitration case
Preferably, using HF+NH4F+H2The buffered oxide etch solution that O is mixed is to the opening of the nitration case
Madial wall carries out wet method and gently etches.
Preferably, using HF+NH4F+H2The buffered oxide etch solution that O is mixed peels off the top oxidation
Layer.
Preferably, it is filled in oxidation film to the nitration case in the shallow ditch groove structure.
The preparation method of the fleet plough groove isolation structure of the present invention has the clear of high etching selection ratio by using to nitration case
Wash liquid can not only carry out back nitration case carving, can also be carried out at the same time cleaning, clear to be completed in a step process
It washes returning for technique and nitration case to carve, since the cleaning liquid of the high etching selection ratio is stained same in removal semiconductor substrate
When, also there is certain etch rate to nitration case, to by rationally controlling scavenging period, so that it may to realize to nitration case
It returns and carves, avoid to return to carve using traditional phosphoric acid progress nitration case and semiconductor substrate is caused to generate a large amount of defects, improve made
The quality of standby fleet plough groove isolation structure；Also, processing step compared with the existing methods, is simplified, cost is reduced, is improved
Production efficiency.
Description of the drawings
Fig. 1 is the flow diagram of the preparation method of traditional fleet plough groove isolation structure
Fig. 2 is the flow diagram of the preparation method of the fleet plough groove isolation structure of the present invention
Fig. 3-8 for the present invention a preferred embodiment fleet plough groove isolation structure preparation method each step institute shape
At structural schematic diagram
Specific implementation mode
To keep present disclosure more clear and easy to understand, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
As previously mentioned, in the preparation of fleet plough groove isolation structure, nitration case carve using traditional phosphoric acid, not only
A large amount of defects can be caused to semiconductor substrate, can also increase processing step and cost, to reduce production efficiency, for this purpose, this hair
It is bright to improve existing nitration case time carving method, the quarter process of returning of cleaning process and nitration case is completed in same step,
It is to complete to carve returning for nitration case in cleaning process, this just needs have certain carve using to nitration case in cleaning process
The cleaning liquid of rate is lost, which plays cleaning and the effect of etching simultaneously, to avoid conventional method to semiconductor
A large amount of defects caused by substrate improve the quality for being formed by fleet plough groove isolation structure, and further simplify processing step, drop
Low process costs, improve production efficiency.
The preparation method of the fleet plough groove isolation structure of the present invention is made below with reference to attached drawing 2-8 and specific embodiment detailed
Explanation.Wherein, Fig. 2 is the flow diagram of the preparation method of the fleet plough groove isolation structure of the present invention, and Fig. 3-8 is the one of the present invention
Each step of the preparation method of the fleet plough groove isolation structure of a preferred embodiment is formed by structural schematic diagram.It should be noted
Be that attached drawing is all made of very simplified form, using non-accurate ratio, and only to it is convenient, clearly reach aid illustration
The purpose of the present embodiment.
Referring to Fig. 2, the preparation method of the fleet plough groove isolation structure of the present invention, may comprise steps of：
Step S01：Referring to Fig. 3, sequentially forming oxidation at the top of bottom dielectric layer 2- nitration cases 3- on semiconductor substrate 1
Layer 4 constitutes hard mask layer；
Specifically, the semiconductor substrate 1 of the present invention can be monocrystalline substrate or multicrystalline silicon substrate, can also be germanium silicon
Silicon substrate (SOI) on substrate, insulating layer etc.；It can be, but not limited to grow in hard mask layer using chemical vapour deposition technique
Bottom dielectric layer 2, nitration case 3 and top oxide layer 4；The thickness of each layer in hard mask layer can according to actual process requirement come
Setting, the invention is not limited in this regard.The ingredient of bottom dielectric layer 2 can be oxide；The ingredient of nitration case 3 can be nitridation
Silicon；The ingredient of top oxide layer 4 can be silica.In a preferred embodiment of the present invention, top oxide layer 4 is
Step S02：Referring to Fig. 4, through lithography and etching technique, opening is formed in hard mask layer；
Specifically, in a preferred embodiment of the present invention, may include：First, using photoetching process, including coating
Photoresist, patterning photoresist；Then, using patterned photoresist as mask, it can be, but not limited to using plasma dry method
Etching technics etches hard mask layer, to form the pattern of shallow ditch groove structure to be prepared in hard mask layer；Such as Fig. 4 institutes
Show, an opening is formed in hard mask layer, this opening is as the process window during subsequent etching shallow ditch groove structure.
Can also include removal photoresist, cleaning semiconductor substrate, due to this after patterned hard mask layer
The those of ordinary skill in field could be aware that these technical process, the present invention repeat no more this.
Step S03：Referring to Fig. 5, using hard mask layer as mask, etch semiconductor substrates 1, shape in semiconductor substrate 1
At shallow ditch groove structure；
Specifically, in a preferred embodiment of the present invention, can be, but not limited to using plasma dry etching work
Skill carrys out etch semiconductor substrates 1, and the opening in hard mask layer is as etching window, to form shallow ditch groove structure, shallow trench knot
Structure may include the shapes such as sloped sidewall, trapezoidal, rectangle, the invention is not limited in this regard.
Step S04：The madial wall of the opening of nitration case is gently etched；
It is gently etched specifically, wet etching may be used, in a preferred embodiment of the present invention, using HF+
NH4F+H2The buffered oxide etch solution (BOE, buffered oxide etch) that O is mixed carries out wet method and gently etches.
As previously mentioned, in technical process, the interior side-wall surface of the opening of hard mask layer will produce oxidation film, especially
On the madial wall of the opening of nitration case, if do not removed, it will influence subsequent nitridation layer and return being smoothed out for quarter；Therefore, may be used
With using the interior side-wall surface of the light etch nitride layer opening of wet method；At the same time, since the ingredient of top oxide layer is oxide,
When gently being etched to the madial wall, top oxide layer is also inevitably etched away, still, due to light
The amount of the etching of etching is very small, does not interfere with subsequent technique, therefore, in the light etching process, to top oxide layer
Etching, which can be ignored, not to be considered.Similarly, if the ingredient of bottom dielectric layer is oxide, there is also very micro etchings, but
It can ignore and not consider.
It should be noted that top oxide layer is as mask layer, what is played act as：First, in etching shallow ditch groove structure
Shi Zuowei mask layers, second is that being protected at the top of nitration case not by etching injury as mask layer when nitration case is returned and carved.
Step S05：Referring to Fig. 6, carrying out cleaning and returning carving technology；
Specifically, the present invention simultaneously carves returning for nitration case 3 in cleaning process to realize, carried out in cleaning
Following improvement：Be mask with top oxide layer 4, using to nitration case 3 have high etching selection ratio cleaning liquid to nitridation
Layer 3 carve, to expand the opening of nitration case 3；At the same time, cleaning is carried out, entire semiconductor substrate is cleaned, including
Cleaning in hard mask layer to semiconductor substrate and thereon, shallow ditch groove structure.In this way, in cleaning process, as long as rationally control
Time processed, so that it may to complete to carve returning for nitration case 3.
Certainly, it is cleaning with after time carving technology, cleaning again can also carried out, to ensure entire semiconductor substrate
And various structures etc. thereon clean up.
In a preferred embodiment of the present invention, it may include following procedure：
First, it carries out cleaning and returns carving technology：Using H2SO4And H2O2The standard cleaning liquid (SPM) mixed carries out
Cleaning process, in the process, standard cleaning liquid to nitration case 3 carve；
Since SPM liquids have certain etch rate to nitration case 3, so, as long as when the cleaning appropriate for extending SPM
Between, you can it realizes and returning for nitration case 3 is carved.Specific technological parameter can be set according to actual process requirement.Preferably, clear
It can be 10~30min to wash and return the time used by carving technology and (that is to say that returning for nitration case 3 carves the time)；H2SO4With H2O2's
Volume ratio can be (10~1):(1~10)；Cleaning (that is to say and be returned to nitration case 3 with temperature used by time carving technology
Temperature used by carving) can be 100-150 DEG C.Finally to nitration case 3 return carve thickness can be
Simultaneously as SPM, which can stain metal, waits removal, got rid of in entire semiconductor substrate so as to clean
The metal of (including in hard mask layer surface and shallow ditch groove structure) stains equal remain.
Then, cleaning again is carried out：Using NH3·H2O、H2O2And H2The standard No.1 liquid (APM) that O is mixed comes
Carry out cleaning process.
Here, APM is mainly used for removing particle etc., since those skilled in the art could be aware that it is specific clear
Journey is washed, the present invention repeats no more this.
Step S06：Referring to Fig. 7, top oxide layer 4 is peeled off；
Top oxide layer 4 is peeled off specifically, wet-etching technology may be used, is peeled off for example, BOE may be used
Top oxide layer.Since those skilled in the art could be aware that the detailed process of the stripping, the present invention are no longer superfluous to this
It states.
Step S07：Referring to Fig. 8, liner oxide film 5 and filling oxidation film 6 are grown in shallow ditch groove structure, to
Form fleet plough groove isolation structure.
Shallow ditch groove structure is filled specifically, high-density plasma oxidation film (HDP) fill process may be used,
It the top for the oxidation film 6 filled can be down in nitration case 3, specifically, the top for the oxidation film 6 filled can be higher than nitridation
The bottom of layer 3 and the top for being less than nitration case 3, as shown in Figure 9.This is because subsequently also remove nitration case 3, filling
Oxidation film 6 only needs to be higher than bottom dielectric layer 2.
In conclusion the preparation method of the fleet plough groove isolation structure of the present invention, by during being cleaned, using
The cleaning liquid to nitration case with high etching selection ratio can not only carry out back nitration case carving, can also carry out cleaning
Journey is avoided and is nitrogenized using traditional phosphoric acid to complete cleaning process in a step process and be carved to returning for nitration case
Layer, which returns to carve, causes semiconductor substrate to generate a large amount of defects, improves the quality of prepared fleet plough groove isolation structure；Also, with it is existing
Some methods are compared, and processing step is simplified, and reduce cost, improve production efficiency.
Although the present invention disclosed with preferred embodiment it is as above, the right embodiment illustrate only for the purposes of explanation and
, it is not limited to the present invention, if those skilled in the art can make without departing from the spirit and scope of the present invention
Dry changes and retouches, and the protection domain that the present invention is advocated should be subject to described in claims.
Claims (9)
1. a kind of preparation method of fleet plough groove isolation structure, which is characterized in that including：
Bottom dielectric layer-nitration case-top oxide layer is sequentially formed on a semiconductor substrate, constitutes hard mask layer；
Through lithography and etching technique, opening is formed in the hard mask layer；
Using the hard mask layer as mask, the semiconductor substrate is etched, forms shallow ditch groove structure in the semiconductor substrate；
The madial wall of the opening of the nitration case is gently etched；
It carries out cleaning and returns carving technology；Wherein, during being cleaned, using the top oxide layer as mask, using pair
There is the nitration case cleaning liquid of high etching selection ratio only to the nitration case carve, to expand the nitration case
Opening, while top oxide layer and bottom dielectric layer are not etched or to the etch rate of top oxide layer and bottom dielectric layer
Much smaller than the etch rate to the nitration case；The cleaning liquid of the high etching selection ratio uses H2SO4And H2O2It mixes
Standard cleaning liquid；
The top oxide layer is peeled off；
Liner oxide film and filling oxidation film are grown in the shallow ditch groove structure, to form the shallow trench isolation
Structure.
2. the preparation method of fleet plough groove isolation structure according to claim 1, which is characterized in that carry out it is described cleaning with
It returns after carving technology, further includes carrying out cleaning again.
3. the preparation method of fleet plough groove isolation structure according to claim 1, which is characterized in that the H2SO4With H2O2's
Volume ratio is (10~1):(1~10).
4. the preparation method of fleet plough groove isolation structure according to claim 1, which is characterized in that carry out the cleaning and return
Time used by carving technology is 10~30min.
5. the preparation method of fleet plough groove isolation structure according to claim 1, which is characterized in that the cleaning and Hui Kegong
Temperature employed in skill is 100-150 DEG C.
6. the preparation method of fleet plough groove isolation structure according to claim 1, which is characterized in that returned to the nitration case
The thickness at quarter is
7. the preparation method of fleet plough groove isolation structure according to claim 1, which is characterized in that use HF+NH4F+H2O is mixed
Buffered oxide etch solution made of conjunction carries out wet method to the madial wall of the opening of the nitration case and gently etches.
8. the preparation method of fleet plough groove isolation structure according to claim 1, which is characterized in that use HF+NH4F+H2O is mixed
Buffered oxide etch solution made of conjunction peels off the top oxide layer.
9. the preparation method of fleet plough groove isolation structure according to claim 1, which is characterized in that in the shallow ditch groove structure
In middle filling oxidation film to the nitration case.
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| CN105762059A (en) * | 2014-12-16 | 2016-07-13 | 中芯国际集成电路制造(上海)有限公司 | Shallow trench structure cleaning method, isolation structure manufacturing method, and semiconductor device |
| CN107359113B (en) * | 2017-07-28 | 2021-04-13 | 武汉光谷量子技术有限公司 | Method for etching InP material by using RIE equipment and InP material etched |
| US10515845B2 (en) * | 2017-11-09 | 2019-12-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure including isolations and method for manufacturing the same |
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| US6838392B1 (en) * | 2002-03-15 | 2005-01-04 | Cypress Semiconductor Corporation | Methods of forming semiconductor structures, and articles and devices formed thereby |
| CN101894786A (en) * | 2009-05-20 | 2010-11-24 | 上海华虹Nec电子有限公司 | Method for preparing shallow trench isolation (STI) |
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| US6818526B2 (en) * | 2002-10-02 | 2004-11-16 | Texas Instruments Incorporated | Method for moat nitride pull back for shallow trench isolation |
| US20120309166A1 (en) * | 2011-05-31 | 2012-12-06 | United Microelectronics Corp. | Process for forming shallow trench isolation structure |
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| US6838392B1 (en) * | 2002-03-15 | 2005-01-04 | Cypress Semiconductor Corporation | Methods of forming semiconductor structures, and articles and devices formed thereby |
| CN101894786A (en) * | 2009-05-20 | 2010-11-24 | 上海华虹Nec电子有限公司 | Method for preparing shallow trench isolation (STI) |
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