CN104064510A - Preparation method for shallow trench isolation structure - Google Patents
Preparation method for shallow trench isolation structure Download PDFInfo
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- CN104064510A CN104064510A CN201410215749.8A CN201410215749A CN104064510A CN 104064510 A CN104064510 A CN 104064510A CN 201410215749 A CN201410215749 A CN 201410215749A CN 104064510 A CN104064510 A CN 104064510A
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- etching
- nitration case
- isolation structure
- preparation
- layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Abstract
The invention provides a preparation method for a shallow trench isolation structure. The preparation method comprises the following steps of: sequentially forming a bottom medium layer, a nitration layer and a top oxidation layer on a semiconductor substrate to form a hard mask layer; forming an opening in the hard mask layer by virtue of photoetching and etching processes; forming a shallow trench structure in the semiconductor substrate by taking the hard mask layer as a mask; lightly etching the inner sidewall of the opening of the nitration layer; carrying out cleaning and back-etching processes. Back-etching can be carried out on the nitration layer and the cleaning process can be carried out by adopting cleaning solution with a high etching selection ratio for the nitration layer, thus finishing the cleaning process and back-etching for the nitration layer in a one-step process, avoiding lots of defects generated on the semiconductor substrate due to the adoption of traditional phosphoric acid for carrying out nitration layer back-etching, and improving the quality of prepared shallow trench isolation structure; moreover, compared with the existing method, process steps are simplified and production efficiency is increased.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of preparation method of fleet plough groove isolation structure.
Background technology
Fleet plough groove isolation structure (STI) is the important structure in semiconductor integrated circuit field, refers to Fig. 1, is the preparation method's of traditional fleet plough groove isolation structure schematic flow sheet, and it comprises the following steps:
Step L01: form successively bottom dielectric layer-nitration case-top oxide layer in Semiconductor substrate, form hard mask layer;
Step L02: through photoetching and etching technics, form opening in hard mask layer;
Step L03: take hard mask layer as mask, etching semiconductor substrate forms shallow ditch groove structure in Semiconductor substrate;
Step L04: the madial wall of the opening of nitration case is carried out to light etching, to remove the oxide-film forming on this madial wall;
This is due in technical process, the sidewall surfaces of nitration case opening can be reacted with water vapour, oxygen etc. and be generated silica nitrogen or Si oxide, be similar to oxide, this oxidation film covers the interior side-wall surface of nitration case opening, nitration case returns in carving technology, the etching liquid adopting does not produce etch rate to oxide, if the oxidation film of nitration case opening interior side-wall surface is not got rid of, will cause the etching of nitration case to carry out smoothly; Thus, the etching technics that light etching adopts is the technique of existing removal oxide, such as, plasma dry etch process etc.
' light etching ' is the known technique of industry, and its etch amount is very small, and negligible with respect to the thickness of the thin layer of institute's etching, ' light etching ' is generally used for the surface of cleaning film layer, removes surperficial oxide, stains etc.Such as, here, all negligible with respect to the thickness of nitration case, top oxide layer, bottom dielectric layer, ' light etching ' just removed the oxidation film of the madial wall of nitration case opening, plays the effect of cleaning nitration case opening interior side-wall surface.
Step L05: take top oxide layer as mask, adopt phosphoric acid to return quarter to nitration case, to expand the opening of nitration case;
Step L06: carry out cleaning;
Step L07: top oxide layer is peeled off;
Step L08: grow liners oxide-film and employing high-density plasma oxide-film are filled shallow ditch groove structure in shallow ditch groove structure, thereby form fleet plough groove isolation structure.
In the preparation technology of above-mentioned traditional fleet plough groove isolation structure, if do not add nitration case to return carving technology,, in high-density plasma oxide-film (HDP) fill process below, there will be two kinds of defects:
The corner of I, STI is easy to form cavity.Owing to there is the technique of a large amount of wet etching oxide layers in integrated circuit fabrication process, this cavity is easy to constantly be expanded.If also have the technique of nitration case or polycrystalline silicon growth and etching in follow-up technique, nitration case or polysilicon film president are in this cavity, and the film in this cavity almost cannot be etched away, thereby form residue;
II, in the corner of STI, be easy to form depression (divot), cause the polysilicon film of subsequent growth down to take, be easy to form parasitic circuit.
Therefore, in traditional STI technique, added nitration case to return carving technology, can reach the effect that allows HDP be filled into active area, thereby also can avoid empty generation.But it is shorter that traditional nitration case returns the time at quarter, such as 3～10min, and it is poor that the nitride film of short time returns the controllability of carving technology, such as, only, in identical dipper, adopt phosphoric acid H
3pO
4nitration case is returned and carved 4 minutes, and its etching difference can reach 130A above (from 100A to 230A), and main cause is: common H
3pO
4liquid just can be changed new liquid after operation complete certain batch or certain hour, and this reusing and wider heating-up temperature difference (difference is +/-5 degree), finally causes phosphoric acid in the short period to produce larger difference to the etching of nitration case.
In addition, adopt traditional nitration case to return carving technology, because phosphoric acid directly contacts silicon substrate, and the silicon substrate surface of repellency often causes phosphoric acid in follow-up cleaning, to be difficult to remove, and forms a large amount of defects.Therefore, at phosphoric acid, return and need to increase the defect that one processing step removes surface of silicon after carving nitration case, due to after phosphoric acid returns quarter, the composition of the defect producing on silicon substrate is containing Si, O, with silica type seemingly, so can adopt the method for removing oxide layer to remove this class defect; And then clean.Such process sequence, has increased processing step and cost undoubtedly, has affected flow speed.
As can be seen here, it is unstable that existing nitration case returns carving technology, easily causes nitration case etching inhomogeneous, affects the quality of formed fleet plough groove isolation structure, and processing step various, affect production efficiency, increased cost.
Summary of the invention
In order to overcome above problem, the object of the invention is to improve existing nitration case and return carving method, not only can improve the uniformity of nitration case etching and the quality of formed fleet plough groove isolation structure, can also simplify processing step, enhance productivity.
To achieve these goals, the invention provides a kind of preparation method of fleet plough groove isolation structure, it comprises:
In Semiconductor substrate, form successively bottom dielectric layer-nitration case-top oxide layer, form hard mask layer;
Through photoetching and etching technics, in described hard mask layer, form opening;
Take described hard mask layer as mask, and Semiconductor substrate described in etching forms shallow ditch groove structure in described Semiconductor substrate;
The madial wall of the opening of described nitration case is carried out to light etching;
Clean and return carving technology; Wherein, in the process of cleaning, take described top oxide layer as mask, the cleaning liquid that employing has high etching selection ratio to described nitration case returns quarter to described nitration case, to expand the opening of described nitration case;
Described top oxide layer is peeled off;
Grow liners oxide-film and filling oxide-film in described shallow ditch groove structure, thus described fleet plough groove isolation structure formed.
Preferably, after carrying out described cleaning and returning carving technology, also comprise and carry out cleaning again.
Preferably, described cleaning comprises with time carving technology: adopt H
2sO
4and H
2o
2the standard cleaning liquid mixing carries out cleaning process, and described standard cleaning liquid returns quarter to described nitration case simultaneously.
Further, described H
2sO
4with H
2o
2volume ratio be (10～1): (1～10).
Preferably, carrying out described cleaning is 10～30min with the time that time carving technology adopts.
Preferably, described cleaning is 100-150 ° of C with returning the temperature adopting in carving technology.
Preferably, to the thickness that returns quarter of described nitration case, be 150-250A.
Preferably, adopt HF+NH
4f+H
2the buffer oxide etching solution that O mixes carries out the light etching of wet method to the madial wall of the opening of described nitration case.
Preferably, adopt HF+NH
4f+H
2the buffer oxide etching solution that O mixes peels off described top oxide layer.
Preferably, in described shallow ditch groove structure, fill oxide-film to described nitration case.
The preparation method of fleet plough groove isolation structure of the present invention, by adopting cleaning liquid nitration case to high etching selection ratio, not only can return quarter to nitration case, can also carry out cleaning simultaneously, thereby in a step process, completing returning of cleaning and nitration case carves, in the cleaning liquid of this high etching selection ratio staining on removing Semiconductor substrate, also nitration case is had to certain etch rate, thereby by rationally controlling scavenging period, just can realize returning of nitration case carved, having avoided adopting traditional phosphoric acid to carry out nitration case returns to carve and causes Semiconductor substrate to produce a large amount of defects, improved the quality of prepared fleet plough groove isolation structure, and, compared with the existing methods, simplified processing step, reduced cost, improved production efficiency.
Accompanying drawing explanation
Fig. 1 is the preparation method's of traditional fleet plough groove isolation structure schematic flow sheet
Fig. 2 is the preparation method's of fleet plough groove isolation structure of the present invention schematic flow sheet
Fig. 3-8 are preparation method's the formed structural representation of each step of the fleet plough groove isolation structure of a preferred embodiment of the present invention
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
As previously mentioned, in the preparation of fleet plough groove isolation structure, adopt traditional phosphoric acid to return quarter to nitration case, not only can cause a large amount of defects to Semiconductor substrate, also can increase processing step and cost, thereby reduction production efficiency, for this reason, the present invention has improved existing nitration case and has returned carving method, the quarter process of returning of cleaning process and nitration case is completed in same step, that is to say to complete in cleaning process returning of nitration case carved, this just need to adopt cleaning liquid nitration case to certain etch rate in cleaning process, this cleaning liquid is brought into play the effect of cleaning and etching simultaneously, thereby a large amount of defects of avoiding conventional method to cause Semiconductor substrate, improve the quality of formed fleet plough groove isolation structure, and further simplified processing step, reduced process costs, improved production efficiency.
Below with reference to accompanying drawing 2-8 and specific embodiment, the preparation method of fleet plough groove isolation structure of the present invention is elaborated.Wherein, the preparation method's that Fig. 2 is fleet plough groove isolation structure of the present invention schematic flow sheet, Fig. 3-8 are preparation method's the formed structural representation of each step of the fleet plough groove isolation structure of a preferred embodiment of the present invention.It should be noted that, accompanying drawing all adopts very the form simplified, uses non-ratio accurately, and only in order to object convenient, that clearly reach aid illustration the present embodiment.
Refer to Fig. 2, the preparation method of fleet plough groove isolation structure of the present invention, can comprise the following steps:
Step S01: refer to Fig. 3, form successively bottom dielectric layer 2-nitration case 3-top oxide layer 4 in Semiconductor substrate 1, form hard mask layer;
Concrete, Semiconductor substrate 1 of the present invention can be monocrystalline substrate, or multicrystalline silicon substrate, can also be for the silicon substrate on germanium silicon substrate, insulating barrier (SOI) etc.; Can be, but not limited to the bottom dielectric layer 2, nitration case 3 and the top oxide layer 4 that adopt chemical vapour deposition technique to grow in hard mask layer; The thickness of each in hard mask layer layer can require to set according to actual process, and the present invention is not restricted this.The composition of bottom dielectric layer 2 can be oxide; The composition of nitration case 3 can be silicon nitride; The composition of top oxide layer 4 can be silica.In a preferred embodiment of the present invention, top oxide layer 4 is 50-500A.
Step S02: refer to Fig. 4, through photoetching and etching technics, form opening in hard mask layer;
Concrete, in a preferred embodiment of the present invention, can comprise: first, adopt photoetching process, comprise and apply photoresist, patterning photoresist; Then, the photoresist of patterning of take is mask, can be, but not limited to using plasma dry etch process and carrys out etching hard mask layer, thereby in hard mask layer, form the pattern of the shallow ditch groove structure that will prepare; As shown in Figure 4, form an opening in hard mask layer, this opening is as the process window in subsequent etching shallow ditch groove structure process.
After patterned hard mask layer, can also comprise steps such as removing photoresist, cleaning Semiconductor substrate, because those of ordinary skill in the art can know these technical processs, the present invention repeats no more this.
Step S03: refer to Fig. 5, take hard mask layer as mask, etching semiconductor substrate 1 forms shallow ditch groove structure in Semiconductor substrate 1;
Concrete, in a preferred embodiment of the present invention, can be, but not limited to using plasma dry etch process and carry out etching semiconductor substrate 1, opening in hard mask layer is as etching window, thereby formation shallow ditch groove structure, shallow ditch groove structure can comprise the shapes such as sloped sidewall, trapezoidal, rectangle, and the present invention is not restricted this.
Step S04: the madial wall of the opening of nitration case is carried out to light etching;
Concrete, can adopt wet etching to carry out light etching, in a preferred embodiment of the present invention, adopt HF+NH
4f+H
2the buffer oxide etching solution that O mixes (BOE, buffered oxide etch) carries out the light etching of wet method.
As previously mentioned, in technical process, the interior side-wall surface of the opening of hard mask layer can produce oxidation film, particularly, on the madial wall of the opening of nitration case, if do not removed, will have influence on follow-up nitration case and return carrying out smoothly of quarter; Therefore, can adopt the interior side-wall surface of the light etching nitration case of wet method opening; Meanwhile, because the composition of top oxide layer is oxide, when this madial wall is carried out to light etching, top oxide layer also inevitably can be etched away, still, and because the amount of the etching of light etching is very small, can not have influence on subsequent technique, therefore,, in this light etching process, the etching of top oxide layer can be ignored and do not considered.In like manner, if the composition of bottom dielectric layer is oxide, also there is very micro-etching, but all can ignore and not consider.
It should be noted that, top oxide layer is as mask layer, the acting as of its performance: the one, when etching shallow ditch groove structure as mask layer, the 2nd, at nitration case, return while carving and be not subject to etching injury as mask layer protection nitration case top.
Step S05: refer to Fig. 6, clean and return carving technology;
Concrete, the present invention carves returning of nitration case 3 in order to realize in cleaning process simultaneously, in cleaning, carried out following improvement: take top oxide layer 4 as mask, the cleaning liquid that employing has high etching selection ratio to nitration case 3 returns quarter to nitration case 3, to expand the opening of nitration case 3; Meanwhile, carry out cleaning, clean whole Semiconductor substrate, comprise the hard mask layer on Semiconductor substrate and its, the cleaning in shallow ditch groove structure.Like this, in cleaning process, need only the reasonable control time, just can complete returning of nitration case 3 carved.
Certainly, clean with return carving technology after, can also carry out cleaning again, with guarantee by whole Semiconductor substrate and on various structures etc. clean up.
In a preferred embodiment of the present invention, can comprise following process:
First, clean and return carving technology: adopting H
2sO
4and H
2o
2the standard cleaning liquid (SPM) mixing carries out cleaning process, and in this process, standard cleaning liquid returns quarter to nitration case 3;
Because SPM liquid has certain etch rate to nitration case 3, so, as long as the scavenging period of suitable prolongation SPM can be realized returning of nitration case 3 carved.Concrete technological parameter can require to set according to actual process.Preferably, cleaning the time (that is to say returning the time at quarter of nitration case 3) adopting with time carving technology can be 10～30min; H
2sO
4with H
2o
2volume ratio can be (10～1): (1～10); Cleaning the temperature (that is to say nitration case 3 is returned and carves the temperature adopting) adopting with time carving technology can be 100-150 ° of C.Finally returning of nitration case 3 being carved to thickness can be 150-250A.
Meanwhile, due to removals such as SPM can stain metal, thereby can clean the metal of getting rid of in whole Semiconductor substrate (comprising that hard mask layer surface and shallow ditch groove structure are interior), stain etc. residual.
Then, carry out cleaning again: adopt NH
3h
2o, H
2o
2and H
2the liquid of standard (APM) that O mixes carries out cleaning process.
Here, APM is mainly used in removing particle etc., and because those of ordinary skill in the art can know its concrete cleaning process, the present invention repeats no more this.
Step S06: refer to Fig. 7, top oxide layer 4 is peeled off;
Concrete, can adopt wet-etching technology that top oxide layer 4 is peeled off, such as, can adopt BOE to peel off top oxide layer.Because those of ordinary skill in the art can know the detailed process that this is peeled off, the present invention repeats no more this.
Step S07: refer to Fig. 8, grow liners oxide-film 5 and filling oxide-film 6 in shallow ditch groove structure, thus form fleet plough groove isolation structure.
Concrete, can adopt high-density plasma oxide-film (HDP) fill process to fill shallow ditch groove structure, the top of the oxide-film 6 of filling can be in nitration case 3, concrete, the top of the oxide-film 6 of filling can be higher than the bottom of nitration case 3 and lower than the top of nitration case 3, as shown in Figure 8.This be because, follow-uply also nitration case 3 to be removed, 6 needs of oxide-film of filling are higher than bottom dielectric layer 2.
In sum, the preparation method of fleet plough groove isolation structure of the present invention, by in the process of cleaning, employing has the cleaning liquid of high etching selection ratio to nitration case, not only can return quarter to nitration case, can also carry out cleaning process, thereby in a step process, complete cleaning process and returning of nitration case carved, avoid adopting traditional phosphoric acid to carry out nitration case and returned to carve and cause Semiconductor substrate to produce a large amount of defects, improved the quality of prepared fleet plough groove isolation structure; And, compared with the existing methods, simplified processing step, reduced cost, improved production efficiency.
Although the present invention discloses as above with preferred embodiment; right described embodiment only gives an example for convenience of explanation; not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a preparation method for fleet plough groove isolation structure, is characterized in that, comprising:
In Semiconductor substrate, form successively bottom dielectric layer-nitration case-top oxide layer, form hard mask layer;
Through photoetching and etching technics, in described hard mask layer, form opening;
Take described hard mask layer as mask, and Semiconductor substrate described in etching forms shallow ditch groove structure in described Semiconductor substrate;
The madial wall of the opening of described nitration case is carried out to light etching;
Clean and return carving technology; Wherein, in the process of cleaning, take described top oxide layer as mask, the cleaning liquid that employing has high etching selection ratio to described nitration case returns quarter to described nitration case, to expand the opening of described nitration case;
Described top oxide layer is peeled off;
Grow liners oxide-film and filling oxide-film in described shallow ditch groove structure, thus described fleet plough groove isolation structure formed.
2. the preparation method of fleet plough groove isolation structure according to claim 1, is characterized in that, after carrying out described cleaning and returning carving technology, also comprises and carries out cleaning again.
3. the preparation method of fleet plough groove isolation structure according to claim 1, is characterized in that, described cleaning comprises with time carving technology: adopt H
2sO
4and H
2o
2the standard cleaning liquid mixing carries out cleaning process, and described standard cleaning liquid returns quarter to described nitration case simultaneously.
4. the preparation method of fleet plough groove isolation structure according to claim 3, is characterized in that, described H
2sO
4with H
2o
2volume ratio be (10～1): (1～10).
5. according to the preparation method of the fleet plough groove isolation structure described in claim 1 or 3, it is characterized in that, carrying out described cleaning is 10～30min with the time that time carving technology adopts.
6. according to the preparation method of the fleet plough groove isolation structure described in claim 1 or 3, it is characterized in that, described cleaning is 100-150 ℃ with returning the temperature adopting in carving technology.
7. according to the preparation method of the fleet plough groove isolation structure described in claim 1 or 3, it is characterized in that, is 150-250A to the thickness that returns quarter of described nitration case.
8. the preparation method of fleet plough groove isolation structure according to claim 1, is characterized in that, adopts HF+NH
4f+H
2the buffer oxide etching solution that O mixes carries out the light etching of wet method to the madial wall of the opening of described nitration case.
9. the preparation method of fleet plough groove isolation structure according to claim 1, is characterized in that, adopts HF+NH
4f+H
2the buffer oxide etching solution that O mixes peels off described top oxide layer.
10. the preparation method of fleet plough groove isolation structure according to claim 1, is characterized in that, fills oxide-film in described shallow ditch groove structure to described nitration case.
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Cited By (3)
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|---|---|---|---|---|
| CN105762059A (en) * | 2014-12-16 | 2016-07-13 | 中芯国际集成电路制造(上海)有限公司 | Shallow trench structure cleaning method, isolation structure manufacturing method, and semiconductor device |
| CN107359113A (en) * | 2017-07-28 | 2017-11-17 | 武汉光谷量子技术有限公司 | A kind of method and etching of InP material using RIE equipment etching of InP materials |
| CN109768009A (en) * | 2017-11-09 | 2019-05-17 | 台湾积体电路制造股份有限公司 | Semiconductor structure and method for making semiconductor structure |
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| US6838392B1 (en) * | 2002-03-15 | 2005-01-04 | Cypress Semiconductor Corporation | Methods of forming semiconductor structures, and articles and devices formed thereby |
| CN101894786A (en) * | 2009-05-20 | 2010-11-24 | 上海华虹Nec电子有限公司 | Method for preparing shallow trench isolation (STI) |
| US20120309166A1 (en) * | 2011-05-31 | 2012-12-06 | United Microelectronics Corp. | Process for forming shallow trench isolation structure |
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| US6838392B1 (en) * | 2002-03-15 | 2005-01-04 | Cypress Semiconductor Corporation | Methods of forming semiconductor structures, and articles and devices formed thereby |
| US20040067620A1 (en) * | 2002-10-02 | 2004-04-08 | Freidoon Mehrad | Method for moat nitride pull back for shallow trench isolation |
| CN101894786A (en) * | 2009-05-20 | 2010-11-24 | 上海华虹Nec电子有限公司 | Method for preparing shallow trench isolation (STI) |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762059A (en) * | 2014-12-16 | 2016-07-13 | 中芯国际集成电路制造(上海)有限公司 | Shallow trench structure cleaning method, isolation structure manufacturing method, and semiconductor device |
| CN107359113A (en) * | 2017-07-28 | 2017-11-17 | 武汉光谷量子技术有限公司 | A kind of method and etching of InP material using RIE equipment etching of InP materials |
| CN107359113B (en) * | 2017-07-28 | 2021-04-13 | 武汉光谷量子技术有限公司 | Method for etching InP material by using RIE equipment and InP material etched |
| CN109768009A (en) * | 2017-11-09 | 2019-05-17 | 台湾积体电路制造股份有限公司 | Semiconductor structure and method for making semiconductor structure |
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| CN109768009B (en) * | 2017-11-09 | 2022-06-14 | 台湾积体电路制造股份有限公司 | Semiconductor structure and method for manufacturing semiconductor structure |
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