CN104062853A - Vertically dynamic exposure method and apparatus of lithography equipment - Google Patents
Vertically dynamic exposure method and apparatus of lithography equipment Download PDFInfo
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- CN104062853A CN104062853A CN201310090953.7A CN201310090953A CN104062853A CN 104062853 A CN104062853 A CN 104062853A CN 201310090953 A CN201310090953 A CN 201310090953A CN 104062853 A CN104062853 A CN 104062853A
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- exposure
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- workpiece bench
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Abstract
The invention provides a vertically dynamic exposure method of lithography equipment, which is used for exposing a mask plate figure by a projection object lens system to image on a silicon chip of a workpiece bench, which is characterized by comprising the following steps: 1)aligning the workpiece bench, searching for an optimum focal plane, positioning the optimum focal plane at top of a photoresist of the silicon chip; 2)calculating motion speed of the workpiece bench according to photoresist thickness and exposure time, wherein the motion speed is obtained by dividing the photoresist thickness by exposure time; 3)vertically rising the workpiece bench according to the motion speed while exposing, wherein the movement distance of the workpiece bench in a whole exposure process is equal to the thickness of a photoresist coating, an optimum focal plane of the workpiece bench is stayed at the bottom of the photoresist coating when the exposure is completed; and 4)after exposing, starting post-roasting after the motion of the workpiece bench stops and then developing the figure. The invention also provides a vertically dynamic exposure apparatus. During the exposure process, the workpiece bench is vertically moved with uniform speed, and can be continuously exposure during the movement process, so that inclination degree of the inverted trapezoidal figure formed by an inverted rubber during a thick glue technology can be effectively increased.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate to particularly a kind of vertical dynamic exposure method of lithographic equipment and device.
Background technology
In photolithographic exposure process, the inverted trapezoidal figure that mask forms is the figure that has special applications in circuit fabrication, is mainly used in etching technics and stripping technology.
Due to the restriction of the chemical characteristic of photoresist, use positive glue to expose and cannot obtain inverted trapezoidal figure, must use anti-glue, just can obtain inverted trapezoidal figure.But sometimes, because being subject to anti-glue self property impact, the degree of tilt on the inverted trapezoidal limit obtaining after exposure is large not, as shown in Figure 1.
Summary of the invention
The object of the invention is to propose a kind of new exposure method, utilize exposure technology process to make up the too small problem of trapezoidal side degree of tilt that the deficiency because of anti-glue self property causes.
The present invention proposes a kind of vertical dynamic exposure method of lithographic equipment, for mask graph is passed through to projection objective system exposure image at the silicon chip of work stage, it is characterized in that: specifically comprise the steps:
(1) alignment pieces platform, finds optimal focal plane, and makes optimal focal plane be positioned at the photoresist top of silicon chip;
(2) according to photoresist thickness and time shutter, calculate the movement velocity of work stage, described movement velocity is that photoresist thickness is divided by the time shutter;
(3) work stage at the uniform velocity rises according to movement velocity is vertical when exposure, and the distance that in whole exposure process, work stage moves equals the thickness of photoresist coating, makes the optimal focal plane of work stage rest on the bottom of photoresist coating while having exposed;
(4), after end exposure, work stage stop motion also starts rear baking and developing process.
The photoetching exposure device that uses above-mentioned vertical dynamic exposure method exposure, comprises lighting source, mask, projection objective and work stage, it is characterized in that: also comprise control module.
Wherein, described control module is calculated the movement velocity of work stage, and controls work stage motion.
The present invention, by exposure process, makes work stage at the uniform velocity move vertical, and carry out continuous exposure in moving process, can effectively increase the degree of tilt of the formed inverted trapezoidal figure of anti-glue in thick adhesive process.
Accompanying drawing explanation
Can be by following detailed Description Of The Invention and appended graphic being further understood about the advantages and spirit of the present invention.
Fig. 1 is the inverted trapezoidal figure that existing exposure method obtains;
Fig. 2 is the vertical dynamic exposure apparatus structure of the present invention schematic diagram;
Fig. 3 is the inverted trapezoidal figure that the vertical dynamic exposure method of the present invention obtains.
Embodiment
Below in conjunction with accompanying drawing, describe specific embodiments of the invention in detail.
When the present invention exposes work stage, stationary state changes uniform speed motion state into.According to photoresist thickness and time shutter, needed movement velocity while calculating work stage exposure.Using uniform motion speed as work stage input parameter, when exposure, work stage is at the uniform velocity moved upward, until exposed with given speed; Then carry out rear baking, the technological processs such as development become, and finally complete photoresist imaging, the inverted trapezoidal figure slope presenting while promoting the exposure of reversion glue.
As shown in Figure 2, vertical dynamic photolithography exposure device according to the present invention consists of lighting source 1, mask 5, projection objective 2, work stage 6, and wherein work stage consists of silicon wafer stage and work stage rate control module.The present invention uses dynamic exposure mode in exposure process, with 10um thick photoresist, expose 0.5 second be example, before exposure, by work stage rate control module, calculate movement velocity V=20 um/sec, V is fed back to work stage; Start exposure, simultaneously work stage is with the speed of V from Fig. 2 work stage solid line position uniform motion that makes progress, and after 0.5 second, work stage, in the stop motion of Fig. 2 work stage dotted line position, completes exposure; Then carry out rear baking development.
The vertical dynamic exposure method of lithographic equipment of the present invention, for mask graph is passed through to projection objective system exposure image at silicon chip, work stage is made vertical uniform motion in exposure process, specifically comprises the steps:
1. alignment pieces platform, finds optimal focal plane, and makes optimal focal plane be positioned at the photoresist top of silicon chip;
2. control module, according to photoresist thickness and time shutter, is calculated the movement velocity of work stage, and result of calculation is fed back to work stage.Uniform motion speed (V) is photoresist thickness (H) divided by time shutter (T):
;
3. the work stage movement velocity calculating is fed back to work stage, during exposure, work stage at the uniform velocity rises according to movement velocity is vertical, the distance that in whole exposure process, work stage moves equals the thickness of photoresist coating, makes the optimal focal plane of work stage rest on the bottom of photoresist coating while having exposed;
4. end exposure, work stage stop motion, carries out rear baking, and the techniques such as development finally obtain optical patterning.
The present invention, by exposure process, makes work stage at the uniform velocity move vertical, and carry out continuous exposure in moving process, can effectively increase the degree of tilt of the formed inverted trapezoidal figure of anti-glue in thick adhesive process, as shown in Figure 3.
Described in this instructions is preferred embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art, all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (3)
1. the vertical dynamic exposure method of lithographic equipment, for mask graph is passed through to projection objective system exposure image at the silicon chip of work stage, is characterized in that: specifically comprise the steps:
(1) alignment pieces platform, finds optimal focal plane, and makes optimal focal plane be positioned at the photoresist top of silicon chip;
(2) according to photoresist thickness and time shutter, calculate the movement velocity of work stage, described movement velocity is that photoresist thickness is divided by the time shutter;
(3) work stage at the uniform velocity rises according to movement velocity is vertical when exposure, and the distance that in whole exposure process, work stage moves equals the thickness of photoresist coating, makes the optimal focal plane of work stage rest on the bottom of photoresist coating while having exposed;
(4), after end exposure, work stage stop motion also starts rear baking and developing process.
2. the photoetching exposure device that uses vertical dynamic exposure method exposure as claimed in claim 1, comprises lighting source, mask, projection objective and work stage, it is characterized in that: also comprise control module.
3. photoetching exposure device as claimed in claim 2, is characterized in that: described control module is calculated the movement velocity of work stage, and controls work stage motion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310090953.7A CN104062853A (en) | 2013-03-21 | 2013-03-21 | Vertically dynamic exposure method and apparatus of lithography equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310090953.7A CN104062853A (en) | 2013-03-21 | 2013-03-21 | Vertically dynamic exposure method and apparatus of lithography equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104062853A true CN104062853A (en) | 2014-09-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310090953.7A Pending CN104062853A (en) | 2013-03-21 | 2013-03-21 | Vertically dynamic exposure method and apparatus of lithography equipment |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137217A (en) * | 1988-11-17 | 1990-05-25 | Yamaha Corp | Method of projection exposure |
| JPH0311720A (en) * | 1989-06-09 | 1991-01-21 | Hitachi Ltd | Pattern exposing device |
| JPH04318913A (en) * | 1991-04-17 | 1992-11-10 | Canon Inc | Exposure method and manufacture of semiconductor device using that method |
| JPH0513308A (en) * | 1991-07-09 | 1993-01-22 | Sharp Corp | Manufacture of semicoductor device |
| US20110267593A1 (en) * | 2010-05-03 | 2011-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for maintaining depth of focus |
-
2013
- 2013-03-21 CN CN201310090953.7A patent/CN104062853A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137217A (en) * | 1988-11-17 | 1990-05-25 | Yamaha Corp | Method of projection exposure |
| JPH0311720A (en) * | 1989-06-09 | 1991-01-21 | Hitachi Ltd | Pattern exposing device |
| JPH04318913A (en) * | 1991-04-17 | 1992-11-10 | Canon Inc | Exposure method and manufacture of semiconductor device using that method |
| JPH0513308A (en) * | 1991-07-09 | 1993-01-22 | Sharp Corp | Manufacture of semicoductor device |
| US20110267593A1 (en) * | 2010-05-03 | 2011-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for maintaining depth of focus |
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Application publication date: 20140924 |
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