CN104052085A - Solar-energy controller drive circuit with short-circuit protection function - Google Patents
Solar-energy controller drive circuit with short-circuit protection function Download PDFInfo
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- CN104052085A CN104052085A CN201310075384.9A CN201310075384A CN104052085A CN 104052085 A CN104052085 A CN 104052085A CN 201310075384 A CN201310075384 A CN 201310075384A CN 104052085 A CN104052085 A CN 104052085A
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Abstract
The invention discloses a solar-energy controller drive circuit with a short-circuit protection function. The solar-energy controller drive circuit includes a level conversion circuit, a bootstrap boost-up circuit, an MOS tube drive circuit and a short-circuit protection circuit. The level conversion circuit is connected with the bootstrap boost-up circuit. The bootstrap boost-up circuit is connected with the MOS tube drive circuit. The level conversion circuit converts square-wave signals output by an MCU in the solar-energy controller and uses the converted square-wave signals as input signals of the bootstrap boost-up circuit. A task of the bootstrap boost-up circuit is to use voltage bootstrap at a solar panel end as a drive voltage of the MOS tube drive circuit. The short-circuit protection circuit is connected with the MOS tube drive circuit. Drives signals of the MOS tube drive circuit are generated by the MCU and the low level is effective. The short-circuit protection circuit cuts off MOS tube drive signals when a solar panel is in a short circuit in a charging process so as to generate MOS tube switch-off signals and charging can be restored automatically when the short circuit is removed. The solar-energy controller drive circuit is simple in structure and has the advantages of protecting electronic elements, reducing product repair rate and reducing subsequent cost investment.
Description
Technical field
The present invention relates to controller for solar technical field; while specifically normally work, drive circuit can be controlled solar panels and charges a battery, and in charging process, can protect the not impaired controller for solar drive circuit with short-circuit protection of whole system when solar panels short circuit.
Background technology
The damage of storage battery to other accessory circuits such as charging metal-oxide-semiconductor and protective tubes when most of solar charging controller is not all considered solar panels short circuit in charging process in the market.Traditional controller for solar is in the time that just in charging process, solar panels are short-circuited, and the fuse of charging metal-oxide-semiconductor and accumulator terminal can be burnt, and disconnects the loop between storage battery and solar panels.Once shortcoming is solar panels terminal shortcircuit in charging process, just need to change metal-oxide-semiconductor and fuse, use very inconvenient.If make the controller of water proof type, this mode is more inadvisable, if be short-circuited, burns components and parts, and whole controller will be scrapped, and increases the input in engineering later stage.
Summary of the invention
The present invention is intended to overcome the existing above-mentioned defect of prior art; a kind of controller for solar drive circuit with short-circuit protection that speed is fast, reliability is high of protecting is provided; when i.e. normal work, drive circuit can be controlled solar panels and charges a battery; when short circuit occurs; can protect fast electronic devices and components, short circuit can recover charging after removing automatically.
The present invention carrys out specific implementation by the following technical programs.
A kind of controller for solar drive circuit with short-circuit protection, it is characterized in that: the described controller for solar drive circuit with short-circuit protection is by level shifting circuit, bootstrap circuit boost, metal-oxide-semiconductor drive circuit, short-circuit protection circuit composition, level shifting circuit is connected with bootstrap circuit boost, bootstrap circuit boost is connected with MOS drive circuit, level shifting circuit is 50KHZ by the frequency of MCU output in controller for solar, amplitude is that to be converted to frequency be 50KHZ to the square-wave signal of 5V, amplitude is the square-wave signal of 12V, this signal is as the input signal of bootstrap circuit boost, the task of bootstrap circuit boost is the voltage of solar panels end bootstrapping rising 12V, as the driving voltage of metal-oxide-semiconductor drive circuit, described short-circuit protection circuit is connected with metal-oxide-semiconductor drive circuit, the driving signal of metal-oxide-semiconductor drive circuit is produced by MCU, Low level effective, described short-circuit protection circuit is in charging process when solar panels short circuit, this circuit can move rapidly, cut off metal-oxide-semiconductor and drive signal, and produce and turn-off metal-oxide-semiconductor signal, after removing, short circuit can automatically recover charging, described short-circuit protection circuit is by resistance R 12, resistance R 13, triode Q7 and diode D6 composition, the positive pole of diode D6 is connected with the base stage of triode Q7, resistance R 13 is directly connected on the negative pole of diode D6, one end of resistance R 12 is connected to the emitter of triode Q7, the other end is connected in the base stage of triode Q7 and is connected with the positive pole of diode D6 simultaneously, described MOS drive circuit is by resistance R 5, resistance R 6, resistance R 7, resistance R 8, resistance R 9, resistance R 10, resistance R 11, triode Q4, triode Q5, triode Q6 and diode D3, diode D4, diode D5 composition, wherein the collector electrode of triode Q4 is connected in series diode D4 successively, after resistance R 6, be connected with the base stage of triode Q6, diode D4 is anodal to be connected with the collector electrode of triode Q4, the emitter of triode Q4 is connected with bootstrap circuit boost output, the collector electrode of triode Q5 is connected with the positive pole of diode D3, the negative pole of diode D3 is connected with the base stage of triode Q4, one end of resistance R 5 is connected with the base stage of triode Q4, the other end is connected with the emitter of triode Q4, the base stage of triode Q5 is connected with the emitter of the triode Q7 in short-circuit protection circuit after being connected in series resistance R 8, the emitter of triode Q5 is connected with the collector electrode of triode Q7 in short-circuit protection circuit after being connected in series resistance R 9, drive signal PWM_PV to be connected through resistance R 11 and metal-oxide-semiconductor again, the wherein collector electrode of one end of resistance R 11 and triode Q7, resistance R 9 connects, the other end drives signal PWM_PV to be connected with metal-oxide-semiconductor, the base stage of triode Q6 is connected with the positive pole of diode D5, the negative pole of diode D5 is connected with the emitter of triode Q6 after being connected in series resistance R 7, the positive pole of diode D5 is connected with the base stage of triode Q6, one end of resistance R 10 is connected with the collector electrode of triode Q6, the other end is connected with the base stage of triode Q6.
Described level shifting circuit resistance R 1, resistance R 2, resistance R 3, resistance R 4 and triode Q1, triode Q2, triode Q3 composition, the collector electrode of triode Q1 is connected with the collector electrode of triode Q3, the grounded emitter of triode Q3, triode Q3 integrates emitter-base bandgap grading as signal output part, resistance R 2 is directly connected on the collector electrode of triode Q1, the emitter of triode Q2 is connected with the base stage of triode Q3, the collector electrode of triode Q2 is connected with the base stage of triode Q1, the base stage of triode Q3 and signal input part, resistance R 4 is directly connected in the base stage of triode Q3, resistance R 3 is directly connected on the emitter of triode Q2, resistance R 1 is connected between the emitter and base stage of triode Q1, described bootstrap circuit boost is by diode D1, diode D2 and capacitor C 1, capacitor C 2 forms, the negative pole of diode D1 is connected and is connected with capacitor C 1 with the positive pole of diode D2, capacitor C 2 is connected between the positive pole of diode D1 and the negative pole of diode D2, capacitor C 1 is selected low ESR electric capacity, diode D1, diode D2 selects fast recovery diode, the negative pole of the emitter of triode Q4 and diode D2, capacitor C 2 is connected.
The present invention compared with prior art tool has the following advantages: circuit structure of the present invention is simple; in the time that being short-circuited, charging process solar panels end can move rapidly metal-oxide-semiconductor drive circuit; cut off the charge circuit of solar panels end and accumulator terminal, protection electronic devices and components.Reduce product repair rate, the input of current cost after reducing.
Brief description of the drawings
Fig. 1 is the functional-block diagram block diagram of the controller for solar drive circuit of band short-circuit protection of the present invention;
Fig. 2 is the circuit structure theory diagram of the controller for solar drive circuit of band short-circuit protection of the present invention.
Specific embodiment
Below in conjunction with accompanying drawing, the controller for solar drive circuit of band short-circuit protection of the present invention is described in detail.
As Fig. 1, Fig. 2, the controller for solar drive circuit of band short-circuit protection of the present invention, by level shifting circuit, bootstrap circuit boost, metal-oxide-semiconductor drive circuit, short-circuit protection circuit composition, level shifting circuit is connected with bootstrap circuit boost, bootstrap circuit boost is connected with MOS drive circuit, level shifting circuit is 50KHZ by the frequency of MCU output in controller for solar, amplitude is that to be converted to frequency be 50KHZ to the square-wave signal of 5V, amplitude is the square-wave signal of 12V, this signal is as the input signal of bootstrap circuit boost, the task of bootstrap circuit boost is the voltage of solar panels end bootstrapping rising 12V, as the driving voltage of metal-oxide-semiconductor drive circuit.
Short-circuit protection circuit is connected with metal-oxide-semiconductor drive circuit; the driving signal of metal-oxide-semiconductor drive circuit is produced by MCU; Low level effective; wherein short-circuit protection circuit is in charging process when solar panels short circuit; this circuit can move rapidly; cut off metal-oxide-semiconductor and drive signal, and produce shutoff metal-oxide-semiconductor signal, after short circuit is removed, can automatically recover charging.
Short-circuit protection circuit is made up of resistance R 12, resistance R 13, triode Q7 and diode D6; the positive pole of diode D6 is connected with the base stage of triode Q7; resistance R 13 is directly connected on the negative pole of diode D6; one end of resistance R 12 is connected to the emitter of triode Q7, and the other end is connected in the base stage of triode Q7 and is connected with the positive pole of diode D6 simultaneously.If the solar panels end situation that is short-circuited in charging process, PV+ end is pulled low to GND, triode Q7 conducting, and D point voltage is drawn high, and Q5 turn-offs, and Q4 turn-offs, and metal-oxide-semiconductor Q8 turn-offs, and the charge circuit of solar panels and storage battery is disconnected; After short circuit is removed, Q7 turn-offs, and the control of MOS is again by driving signal PWM_PV to determine.
MOS drive circuit is by resistance R 5, resistance R 6, resistance R 7, resistance R 8, resistance R 9, resistance R 10, resistance R 11, triode Q4, triode Q5, triode Q6 and diode D3, diode D4, diode D5 composition, wherein the collector electrode of triode Q4 is connected in series diode D4 successively, after resistance R 6, be connected with the base stage of triode Q6, diode D4 is anodal to be connected with the collector electrode of triode Q4, the emitter of triode Q4 is connected with bootstrap circuit boost output, the collector electrode of triode Q5 is connected with the positive pole of diode D3, the negative pole of diode D3 is connected with the base stage of triode Q4, one end of resistance R 5 is connected with the base stage of triode Q4, the other end is connected with the emitter of triode Q4, the base stage of triode Q5 is connected with the emitter of the triode Q7 in short-circuit protection circuit after being connected in series resistance R 8, the emitter of triode Q5 is connected with the collector electrode of triode Q7 in short-circuit protection circuit after being connected in series resistance R 9, drive signal PWM_PV to be connected through resistance R 11 and metal-oxide-semiconductor again, the wherein collector electrode of one end of resistance R 11 and triode Q7, resistance R 9 connects, the other end drives signal PWM_PV to be connected with metal-oxide-semiconductor, the base stage of triode Q6 is connected with the positive pole of diode D5, the negative pole of diode D5 is connected with the emitter of triode Q6 after being connected in series resistance R 7, the positive pole of diode D5 is connected with the base stage of triode Q6, one end of resistance R 10 is connected with the collector electrode of triode Q6, the other end is connected with the base stage of triode Q6.MOS drives signal PWM_PV to be produced by MCU, Low level effective.In the time that PWM_PV is low level, Q4, Q5 conducting, Q6 cut-off, metal-oxide-semiconductor conducting; In the time that PWM_PV is high level, Q4, Q5 cut-off, Q6 conducting, metal-oxide-semiconductor turn-offs.D5, R7, R10, Q6 turn-off for accelerating metal-oxide-semiconductor.
Level shifting circuit resistance R 1, resistance R 2, resistance R 3, resistance R 4 and triode Q1, triode Q2, triode Q3 composition, the collector electrode of triode Q1 is connected with the collector electrode of triode Q3, the grounded emitter of triode Q3, triode Q3 integrates emitter-base bandgap grading as signal output part, resistance R 2 is directly connected on the collector electrode of triode Q1, the emitter of triode Q2 is connected with the base stage of triode Q3, the collector electrode of triode Q2 is connected with the base stage of triode Q1, the base stage of triode Q3 and signal input part, resistance R 4 is directly connected in the base stage of triode Q3, resistance R 3 is directly connected on the emitter of triode Q2, resistance R 1 is connected between the emitter and base stage of triode Q1.The square-wave signal PN_BOOST being exported by MCU, frequency is that 50KHZ, amplitude are 5V, enters level shifting circuit from A point, after changing, B point signal is 12V into frequency 50KHZ, amplitude.
Bootstrap circuit boost is made up of diode D1, diode D2 and capacitor C 1, capacitor C 2, the negative pole of diode D1 is connected and is connected with capacitor C 1 with the positive pole of diode D2, capacitor C 2 is connected between the positive pole of diode D1 and the negative pole of diode D2, capacitor C 1 is selected low ESR electric capacity, diode D1, diode D2 select fast recovery diode, and the emitter of triode Q4 is connected with negative pole, the capacitor C 2 of diode D2.In the time that B point is low level, PV+ charges to V through diode to capacitor C 1
pV+, the now effect of D2 is to prevent that PV+ charges to C2; In the time that B point is high level, because the quantity of electric charge of electric capacity can not suddenly change, so have: Vpv
+× C=(VDD_PV-V
bm) × C, VDD_PV=Vpv
++ V
bm, wherein V
bmcorresponding voltage during for B point high level.Now D1 can stop capacitor C 1 to the electric discharge of PV+ end.After level shifting circuit and bootstrap circuit boost, C point voltage is like this: VDD_PV=Vpv
++ V
cC_12V.Bootstrap capacitor C1 should select low ESR electric capacity, and bootstrap diode should be selected fast recovery diode.
That specific works process is as follows below:
When in situation one, charging process, solar panels do not have short circuit: the frequency being produced by MCU is that to obtain VDD-PV voltage after level shifting circuit and bootstrap circuit boost be (Vpv for square-wave signal that 50KHZ, amplitude are 5V
++ V
cz_12V).In the time that metal-oxide-semiconductor drives signal PWM_PV to be low level, triode Q5 conducting, Q4 conducting, the voltage between metal-oxide-semiconductor GS is about 12V, metal-oxide-semiconductor Q8 conducting, solar panels can charge normal by accumulators; In the time that metal-oxide-semiconductor drives signal PWM-PV to be high level, triode Q5 cut-off, Q4 cut-off, the voltage between metal-oxide-semiconductor GS is 0V, metal-oxide-semiconductor Q8 turn-offs.Under this kind of situation, charging process is controlled by PWM_PV.
In situation two, charging process when solar panels short circuit: solar panels terminal shortcircuit in the time that system is charged; PV+ voltage is pulled low to GND; triode Q7 conducting; D voltage is drawn high to about 5V; triode Q5 cut-off, Q4 cut-off, the voltage between metal-oxide-semiconductor GS is 0V, metal-oxide-semiconductor Q8 turn-offs; the short circuit paths at storage battery two ends is cut off, and has protected other components and parts such as metal-oxide-semiconductor and fuse.
After situation three, short-circuit protection, short-circuit conditions is removed: after short-circuit conditions is removed, PV+ voltage rises to normal high voltage; triode Q7 cut-off; because PWM_PV before short circuit is low level; so triode Q5 conducting, Q4 conducting; voltage between metal-oxide-semiconductor GS is about 12V; metal-oxide-semiconductor Q8 conducting, recovers to charge normal automatically.
Controller for solar is an important bridge in photovoltaic system, connects solar components accumulators and discharges and recharges, and the abnormal conditions that may occur are at any time carried out reliably, effectively protected.The invention provides a kind of controller for solar drive circuit with short-circuit protection, in charging process, once solar panels are short-circuited, solar panels and storage battery loop will be blocked rapidly, implement reliably protecting.
Claims (2)
1. the controller for solar drive circuit with short-circuit protection, it is characterized in that: the described controller for solar drive circuit with short-circuit protection is by level shifting circuit, bootstrap circuit boost, metal-oxide-semiconductor drive circuit, short-circuit protection circuit composition, level shifting circuit is connected with bootstrap circuit boost, bootstrap circuit boost is connected with MOS drive circuit, level shifting circuit is 50KHZ by the frequency of MCU output in controller for solar, amplitude is that to be converted to frequency be 50KHZ to the square-wave signal of 5V, amplitude is the square-wave signal of 12V, this signal is as the input signal of bootstrap circuit boost, the task of bootstrap circuit boost is the voltage of solar panels end bootstrapping rising 12V, as the driving voltage of metal-oxide-semiconductor drive circuit,
Short-circuit protection circuit is connected with metal-oxide-semiconductor drive circuit; the driving signal of metal-oxide-semiconductor drive circuit is produced by MCU; Low level effective; described short-circuit protection circuit is in charging process when solar panels short circuit; this circuit can move rapidly, cuts off metal-oxide-semiconductor and drives signal, and produce shutoff metal-oxide-semiconductor signal; after removing, short circuit can automatically recover charging
Described short-circuit protection circuit is made up of resistance R 12, resistance R 13, triode Q7 and diode D6; the positive pole of diode D6 is connected with the base stage of triode Q7; resistance R 13 is directly connected on the negative pole of diode D6; one end of resistance R 12 is connected to the emitter of triode Q7; the other end is connected in the base stage of triode Q7 and is connected with the positive pole of diode D6 simultaneously
Described MOS drive circuit is by resistance R 5, resistance R 6, resistance R 7, resistance R 8, resistance R 9, resistance R 10, resistance R 11, triode Q4, triode Q5, triode Q6 and diode D3, diode D4, diode D5 composition, wherein the collector electrode of triode Q4 is connected in series diode D4 successively, after resistance R 6, be connected with the base stage of triode Q6, diode D4 is anodal to be connected with the collector electrode of triode Q4, the emitter of triode Q4 is connected with bootstrap circuit boost output, the collector electrode of triode Q5 is connected with the positive pole of diode D3, the negative pole of diode D3 is connected with the base stage of triode Q4, one end of resistance R 5 is connected with the base stage of triode Q4, the other end is connected with the emitter of triode Q4, the base stage of triode Q5 is connected with the emitter of the triode Q7 in short-circuit protection circuit after being connected in series resistance R 8, the emitter of triode Q5 is connected with the collector electrode of triode Q7 in short-circuit protection circuit after being connected in series resistance R 9, drive signal PWM-PV to be connected through resistance R 11 and metal-oxide-semiconductor again, the wherein collector electrode of one end of resistance R 11 and triode Q7, resistance R 9 connects, the other end drives signal PWM_PV to be connected with metal-oxide-semiconductor, the base stage of triode Q6 is connected with the positive pole of diode D5, the negative pole of diode D5 is connected with the emitter of triode Q6 after being connected in series resistance R 7, the positive pole of diode D5 is connected with the base stage of triode Q6, one end of resistance R 10 is connected with the collector electrode of triode Q6, the other end is connected with the base stage of triode Q6.
2. the controller for solar drive circuit with short-circuit protection according to claim 1, it is characterized in that: described level shifting circuit resistance R 1, resistance R 2, resistance R 3, resistance R 4 and triode Q1, triode Q2, triode Q3 composition, the collector electrode of triode Q1 is connected with the collector electrode of triode Q3, the grounded emitter of triode Q3, triode Q3 integrates emitter-base bandgap grading as signal output part, resistance R 2 is directly connected on the collector electrode of triode Q1, the emitter of triode Q2 is connected with the base stage of triode Q3, the collector electrode of triode Q2 is connected with the base stage of triode Q1, the base stage of triode Q3 and signal input part, resistance R 4 is directly connected in the base stage of triode Q3, resistance R 3 is directly connected on the emitter of triode Q2, resistance R 1 is connected between the emitter and base stage of triode Q1,
Bootstrap circuit boost is made up of diode D1, diode D2 and capacitor C 1, capacitor C 2, the negative pole of diode D1 is connected and is connected with capacitor C 1 with the positive pole of diode D2, capacitor C 2 is connected between the positive pole of diode D1 and the negative pole of diode D2, capacitor C 1 is selected low ESR electric capacity, diode D1, diode D2 select fast recovery diode, and the emitter of triode Q4 is connected with negative pole, the capacitor C 2 of diode D2.
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