CN104052085B - A kind of controller for solar drive circuit of band short-circuit protection - Google Patents

A kind of controller for solar drive circuit of band short-circuit protection Download PDF

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CN104052085B
CN104052085B CN201310075384.9A CN201310075384A CN104052085B CN 104052085 B CN104052085 B CN 104052085B CN 201310075384 A CN201310075384 A CN 201310075384A CN 104052085 B CN104052085 B CN 104052085B
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resistance
diode
short
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CN104052085A (en
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谷朝栋
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Shenzhen Shuo New Energy Technology Co Ltd
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Shenzhen Shuo New Energy Technology Co Ltd
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Abstract

nullThe controller for solar drive circuit of band short-circuit protection of the present invention,By level shifting circuit、Bootstrap circuit boost、Metal-oxide-semiconductor drive circuit、Short-circuit protection circuit forms,Level shifting circuit is connected with bootstrap circuit boost,Bootstrap circuit boost is connected with MOS drive circuit,The square-wave signal of MCU output in controller for solar is carried out changing and as the input signal of bootstrap circuit boost by level shifting circuit,The task of bootstrap circuit boost is that the voltage of solar panels end is booted as the driving voltage of metal-oxide-semiconductor drive circuit,Described short-circuit protection circuit is connected with metal-oxide-semiconductor drive circuit,The driving signal of metal-oxide-semiconductor drive circuit is produced by MCU,Low level effective,Described short-circuit protection circuit cuts off metal-oxide-semiconductor in charging process and drives signal during solar panels short circuit,Produce and turn off metal-oxide-semiconductor signal,Charging can be automatically recovered after short circuit releases.Circuit structure of the present invention is simple, has protection electronic devices and components, reduces product repair rate, the advantage of the input of current cost after reduction.

Description

A kind of controller for solar drive circuit of band short-circuit protection
Technical field
The present invention relates to controller for solar technical field, when the most normally working, drive circuit can Control solar panels charge a battery, charging process can be protected during solar panels short circuit whole system not by The controller for solar drive circuit of the band short-circuit protection damaged.
Background technology
Major part solar charging controller does not all account for solar panels short circuit in charging process in the market Time battery to charging other accessory circuits such as metal-oxide-semiconductor and protective tube damage.Traditional controller for solar When just in charging process, solar panels are short-circuited, the fuse of charging metal-oxide-semiconductor and accumulator terminal can quilt Burn, disconnect the loop between battery and solar panels.Shortcoming is once solar panels end in charging process Short circuit, it is necessary to change metal-oxide-semiconductor and fuse, uses extremely inconvenient.If making the control of water proof type Device, this mode is more inadvisable, if it occur that short-circuit, burn components and parts, whole controller will be scrapped, and increase Add the input in engineering later stage.
Summary of the invention
It is contemplated that overcome the drawbacks described above existing for prior art, it is provided that a kind of protection speed is fast, reliable The controller for solar drive circuit of the band short-circuit protection that property is high, when the most normally working, drive circuit can control Solar panels charge a battery, when short circuit occurs, it is possible to quickly protect electronic devices and components, after short circuit releases Can automatically recover charging.
The present invention implements by the following technical programs.
A kind of controller for solar drive circuit of band short-circuit protection, it is characterised in that: described band short-circuit protection Controller for solar drive circuit by level shifting circuit, bootstrap circuit boost, metal-oxide-semiconductor drive circuit, short Road protection circuit composition, level shifting circuit is connected with bootstrap circuit boost, bootstrap circuit boost and MOS Drive circuit is connected, and the frequency of MCU output in controller for solar is 50KHZ, width by level shifting circuit Degree for the square-wave signal of 5V be converted to frequency be 50KHZ, amplitude be the square-wave signal of 12V, this signal as from The input signal of lifting volt circuit, the task of bootstrap circuit boost is the voltage of solar panels end to be booted raise 12V, as the driving voltage of metal-oxide-semiconductor drive circuit, described short-circuit protection circuit and metal-oxide-semiconductor drive circuit phase Connecting, the driving signal of metal-oxide-semiconductor drive circuit is produced by MCU, Low level effective, described short-circuit protection circuit In charging process during solar panels short circuit, this circuit can action rapidly, cut off metal-oxide-semiconductor drive signal, And produce shutoff metal-oxide-semiconductor signal, can automatically recover charging, described short-circuit protection electricity after short circuit releases Routing resistance R12, resistance R13, triode Q7 and diode D6 composition, the positive pole of diode D6 and three poles The base stage of pipe Q7 connects, and resistance R13 is directly connected on the negative pole of diode D6, and one end of resistance R12 is even Be connected on the emitter stage of triode Q7, the other end be connected in the base stage of triode Q7 and simultaneously with diode D6 Positive pole connect, described MOS drive circuit is by resistance R5, resistance R6, resistance R7, resistance R8, resistance R9, resistance R10, resistance R11, triode Q4, triode Q5, triode Q6 and diode D3, two poles Pipe D4, diode D5 form, and wherein the colelctor electrode of triode Q4 is sequentially connected in series diode D4, resistance After R6, the base stage with triode Q6 is connected, and diode D4 positive pole is connected with the colelctor electrode of triode Q4, triode The emitter stage of Q4 is connected with bootstrap circuit boost output, and the colelctor electrode of triode Q5 connects with the negative pole of diode D3 Connecing, the positive pole of diode D3 is connected with the base stage of triode Q4, one end of resistance R5 and the base of triode Q4 Pole connects, and the other end is connected with the emitter stage of triode Q4, and the base series of triode Q5 connects resistance R8 Emitter stage with the triode Q7 in short-circuit protection circuit is connected afterwards, and the emitter stage of triode Q5 is connected in series electricity It is connected with the colelctor electrode of triode Q7 in short-circuit protection circuit after resistance R9, then drives with metal-oxide-semiconductor through resistance R11 Dynamic signal PWM_PV connects, and wherein one end of resistance R11 is connected with colelctor electrode, the resistance R9 of triode Q7, The other end drives signal PWM_PV to be connected with metal-oxide-semiconductor, and the base stage of triode Q6 connects with the positive pole of diode D5 Connecing, the negative pole of diode D5 is connected with the emitter stage of triode Q6 after being connected in series resistance R7, diode D5 Positive pole be connected with the base stage of triode Q6, one end of resistance R10 is connected with the colelctor electrode of triode Q6, separately One end is connected with the base stage of triode Q6.
Described level shifting circuit resistance R1, resistance R2, resistance R3, resistance R4 and triode Q1, three poles Pipe Q2, triode Q3 form, and the colelctor electrode of triode Q1 is connected with the colelctor electrode of triode Q3, triode Q3 Grounded emitter, the emitter-base bandgap grading that integrates of triode Q3 is directly connected on triode Q1 as signal output part, resistance R2 Colelctor electrode on, the emitter stage of triode Q2 is connected with the base stage of triode Q3, the colelctor electrode of triode Q2 with The base stage of triode Q1 connects, and the base stage of triode Q3 and signal input part, resistance R4 is directly connected on three poles In the base stage of pipe Q3, resistance R3 is directly connected on the emitter stage of triode Q2, and resistance R1 is connected to three poles Between emitter stage and the base stage of pipe Q1, described bootstrap circuit boost is by diode D1, diode D2 and electric capacity C1, electric capacity C2 form, and the negative pole of diode D1 is connected with the positive pole of diode D2 and is connected with electric capacity C1, Electric capacity C2 is connected between the positive pole of diode D1 and the negative pole of diode D2, and electric capacity C1 selects low ESR electricity Holding, diode D1, diode D2 select fast recovery diode, the emitter stage of triode Q4 and diode D2 Negative pole, electric capacity C2 is connected.
The present invention compared with prior art has the advantage that circuit structure of the present invention is simple, works as charging process Can action metal-oxide-semiconductor drive circuit, cut-out solar panels end and electric power storage rapidly when solar panels end is short-circuited The charge circuit of Chi Duan, protects electronic devices and components.Reduce product repair rate, the input of current cost after reduction.
Accompanying drawing explanation
Fig. 1 is the functional-block diagram block diagram of the controller for solar drive circuit of band short-circuit protection of the present invention;
Fig. 2 is the circuit structure theory diagram of the controller for solar drive circuit of band short-circuit protection of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawings the controller for solar drive circuit of band short-circuit protection of the present invention is retouched in detail State.
As shown in Figure 1, Figure 2, the controller for solar drive circuit of band short-circuit protection of the present invention, by level conversion electricity Road, bootstrap circuit boost, metal-oxide-semiconductor drive circuit, short-circuit protection circuit composition, level shifting circuit and bootstrapping Booster circuit is connected, and bootstrap circuit boost is connected with MOS drive circuit, and level shifting circuit is by the sun Can in controller the frequency of MCU output be 50KHZ, amplitude be the square-wave signal of 5V be converted to frequency be 50KHZ, Amplitude is the square-wave signal of 12V, this signal as the input signal of bootstrap circuit boost, bootstrap circuit boost Task is the voltage of solar panels end to be booted raise 12V, as the driving voltage of metal-oxide-semiconductor drive circuit.
Short-circuit protection circuit is connected with metal-oxide-semiconductor drive circuit, and the driving signal of metal-oxide-semiconductor drive circuit is by MCU Producing, Low level effective, wherein short-circuit protection circuit is in charging process during solar panels short circuit, this circuit Can action rapidly, cut off metal-oxide-semiconductor drive signal, and produce shutoff metal-oxide-semiconductor signal, when short circuit release After can automatically recover charging.
Short-circuit protection circuit is made up of resistance R12, resistance R13, triode Q7 and diode D6, diode The positive pole of D6 is connected with the base stage of triode Q7, and resistance R13 is directly connected on the negative pole of diode D6, electricity One end of resistance R12 is connected to the emitter stage of triode Q7, and the other end is connected in the base stage of triode Q7 and same Time be connected with the positive pole of diode D6.If in charging process, solar panels end is short-circuited situation, PV+ End is pulled low to GND, triode Q7 conducting, and D point voltage is driven high, and Q5 turns off, and Q4 turns off, metal-oxide-semiconductor Q8 Turning off, solar panels are disconnected with the charge circuit of battery;After short circuit releases, Q7 turns off, the control of MOS System is again by driving signal PWM_PV to determine.
MOS drive circuit by resistance R5, resistance R6, resistance R7, resistance R8, resistance R9, resistance R10, Resistance R11, triode Q4, triode Q5, triode Q6 and diode D3, diode D4, diode D5 forms, with triode after wherein the colelctor electrode of triode Q4 is sequentially connected in series diode D4, resistance R6 The base stage of Q6 connects, and diode D4 positive pole is connected with the colelctor electrode of triode Q4, the emitter stage of triode Q4 and Bootstrap circuit boost output connects, and the colelctor electrode of triode Q5 is connected with the negative pole of diode D3, diode D3 Positive pole be connected with the base stage of triode Q4, one end of resistance R5 is connected with the base stage of triode Q4, the other end It is connected with the emitter stage of triode Q4, with short-circuit protection circuit after the base series connection resistance R8 of triode Q5 In the emitter stage of triode Q7 connect, the emitter stage of triode Q5 be connected in series after resistance R9 with short-circuit protection In circuit, the colelctor electrode of triode Q7 connects, then drives signal PWM_PV to be connected through resistance R11 with metal-oxide-semiconductor, Wherein one end of resistance R11 is connected with colelctor electrode, the resistance R9 of triode Q7, and the other end drives with metal-oxide-semiconductor Signal PWM_PV connects, and the base stage of triode Q6 is connected with the positive pole of diode D5, the negative pole of diode D5 After being connected in series resistance R7, the emitter stage with triode Q6 is connected, and the positive pole of diode D5 is with triode Q6's Base stage connects, and one end of resistance R10 is connected with the colelctor electrode of triode Q6, the other end and the base of triode Q6 Pole connects.MOS drives signal PWM_PV to be produced by MCU, Low level effective.When PWM_PV is low level, Q4, Q5 conducting, Q6 cut-off, metal-oxide-semiconductor turns on;When PWM_PV is high level, Q4, Q5 cut-off, Q6 lead Logical, metal-oxide-semiconductor turns off.D5, R7, R10, Q6 turn off for accelerating metal-oxide-semiconductor.
Level shifting circuit resistance R1, resistance R2, resistance R3, resistance R4 and triode Q1, triode Q2, Triode Q3 forms, and the colelctor electrode of triode Q1 is connected with the colelctor electrode of triode Q3, the transmitting of triode Q3 Pole ground connection, the emitter-base bandgap grading that integrates of triode Q3 is directly connected on the current collection of triode Q1 as signal output part, resistance R2 Extremely going up, the emitter stage of triode Q2 is connected with the base stage of triode Q3, the colelctor electrode of triode Q2 and triode The base stage of Q1 connects, and the base stage of triode Q3 and signal input part, resistance R4 is directly connected on triode Q3 Base stage on, resistance R3 is directly connected on the emitter stage of triode Q2, and resistance R1 is connected to triode Q1 Emitter stage and base stage between.The square-wave signal PN_BOOST exported by MCU, frequency is 50KHZ, amplitude is 5V, enters level shifting circuit from A point, converted rear B point signal be frequency 50KHZ, amplitude be 12V.
Bootstrap circuit boost is made up of diode D1, diode D2 and electric capacity C1, electric capacity C2, diode D1 Negative pole be connected with the positive pole of diode D2 and be connected with electric capacity C1 again, electric capacity C2 is just being connected to diode D1 Between the negative pole of pole and diode D2, electric capacity C1 selects low ESR electric capacity, and diode D1, diode D2 select Selecting fast recovery diode, the emitter stage of triode Q4 is connected with negative pole, the electric capacity C2 of diode D2.Work as B When point is for low level, PV+ charges to V through diode to electric capacity C1PV+, the now effect of D2 be prevent PV+ to C2 charges;When B point is high level, owing to the quantity of electric charge of electric capacity can not suddenly change, then have: Vpv+× C=(VDD_PV-VBm) × C, then VDD_PV=Vpv++VBm, wherein VBmFor electricity corresponding during B point high level Pressure.Now D1 can stop electric capacity C1 to discharge to PV+ end.So through level shifting circuit and Bootstrap After circuit, C point voltage is: VDD_PV=Vpv++VCC_12V.Bootstrap capacitor C1 should select low ESR electric capacity, from Lift diode and should select fast recovery diode.
Specific works process is presented herein below as follows:
When in situation one, charging process, solar panels do not have short circuit: the frequency produced by MCU is 50KHZ, width The square-wave signal that degree is 5V obtains VDD-PV voltage after level shifting circuit and bootstrap circuit boost and is (Vpv++VCC_12V).When metal-oxide-semiconductor drives signal PWM_PV to be low level, triode Q5 conducting, Q4 lead Logical, the voltage between metal-oxide-semiconductor GS is about 12V, metal-oxide-semiconductor Q8 conducting, and solar panels can give battery normal Charging;When metal-oxide-semiconductor drives signal PWM_PV to be high level, triode Q5 cut-off, Q4 cut-off, MOS Voltage between pipe GS is 0V, and metal-oxide-semiconductor Q8 turns off.In which case, charging process is controlled by PWM_PV System.
In situation two, charging process during solar panels short circuit: the solar panels terminal shortcircuit when system is charged, PV+ voltage be pulled low to GND, triode Q7 conducting, D voltage be pulled to about 5V, triode Q5 cut-off, Q4 ends, and the voltage between metal-oxide-semiconductor GS is 0V, and metal-oxide-semiconductor Q8 turns off, the short circuit paths at battery two ends Cut-off, protect other components and parts such as metal-oxide-semiconductor and fuse.
After situation three, short-circuit protection, short-circuit conditions is removed: after short-circuit conditions is removed, PV+ voltage rises to Normal high voltage, triode Q7 ends, owing to before short circuit, PWM_PV is low level, so triode Q5 Conducting, Q4 conducting, the voltage between metal-oxide-semiconductor GS is about 12V, metal-oxide-semiconductor Q8 conducting, automatically recovers normal Charging.
Controller for solar is an important bridge in photovoltaic system, connects solar components and fills to battery Electric discharge, and the abnormal conditions being likely to occur at any time are carried out reliably, be effectively protected.The invention provides one Planting the controller for solar drive circuit of band short-circuit protection, in charging process, once solar panels occur short Road, solar panels will be blocked rapidly with battery loop, implements reliably protecting.

Claims (2)

1. the controller for solar drive circuit of a band short-circuit protection, it is characterised in that: described band short circuit is protected The controller for solar drive circuit protected by level shifting circuit, bootstrap circuit boost, metal-oxide-semiconductor drive circuit, Short-circuit protection circuit forms, and level shifting circuit is connected with bootstrap circuit boost, bootstrap circuit boost and MOS Drive circuit is connected, and the frequency of MCU output in controller for solar is 50KHZ, width by level shifting circuit Degree for the square-wave signal of 5V be converted to frequency be 50KHZ, amplitude be the square-wave signal of 12V, this signal as from The input signal of lifting volt circuit, the task of bootstrap circuit boost is the voltage of solar panels end to be booted raise 12V, as the driving voltage of metal-oxide-semiconductor drive circuit,
Short-circuit protection circuit is connected with metal-oxide-semiconductor drive circuit, and the driving signal of metal-oxide-semiconductor drive circuit is by MCU Produce, Low level effective, described short-circuit protection circuit in charging process during solar panels short circuit, this circuit Can action rapidly, cut off metal-oxide-semiconductor drive signal, and produce shutoff metal-oxide-semiconductor signal, when short circuit release After can automatically recover charging,
Described short-circuit protection circuit is made up of resistance R12, resistance R13, triode Q7 and diode D6, and two The positive pole of pole pipe D6 is connected with the base stage of triode Q7, and resistance R13 is directly connected on the negative pole of diode D6, One end of resistance R12 is connected to the emitter stage of triode Q7, the other end be connected in the base stage of triode Q7 and It is connected with the positive pole of diode D6 simultaneously,
Described MOS drive circuit is by resistance R5, resistance R6, resistance R7, resistance R8, resistance R9, resistance R10, resistance R11, triode Q4, triode Q5, triode Q6 and diode D3, diode D4, two Pole pipe D5 forms, with three after wherein the colelctor electrode of triode Q4 is sequentially connected in series diode D4, resistance R6 The base stage of pole pipe Q6 connects, and diode D4 positive pole is connected with the colelctor electrode of triode Q4, and triode Q4 sends out Emitter-base bandgap grading is connected with bootstrap circuit boost output, and the colelctor electrode of triode Q5 is connected with the negative pole of diode D3, and two The positive pole of pole pipe D3 is connected with the base stage of triode Q4, and one end of resistance R5 is connected with the base stage of triode Q4, The other end is connected with the emitter stage of triode Q4, and the base series of triode Q5 is protected with short circuit after connecting resistance R8 The emitter stage of the triode Q7 in protection circuit connects, and the emitter stage of triode Q5 is connected in series after resistance R9 with short In the protection circuit of road, the colelctor electrode of triode Q7 connects, then drives signal PWM_PV through resistance R11 with metal-oxide-semiconductor Connecting, wherein one end of resistance R11 is connected with colelctor electrode, the resistance R9 of triode Q7, the other end and MOS Pipe drives signal PWM_PV to connect, and the base stage of triode Q6 is connected with the positive pole of diode D5, diode D5 Negative pole be connected in series resistance R7 after be connected with the emitter stage of triode Q6, the positive pole of diode D5 and triode The base stage of Q6 connects, and one end of resistance R10 is connected with the colelctor electrode of triode Q6, the other end and triode Q6 Base stage connect.
The controller for solar drive circuit of band short-circuit protection the most according to claim 1, it is characterised in that: Described level shifting circuit resistance R1, resistance R2, resistance R3, resistance R4 and triode Q1, triode Q2, Triode Q3 forms, and the colelctor electrode of triode Q1 is connected with the colelctor electrode of triode Q3, the transmitting of triode Q3 Pole ground connection, the emitter-base bandgap grading that integrates of triode Q3 is directly connected on the current collection of triode Q1 as signal output part, resistance R2 Extremely going up, the emitter stage of triode Q2 is connected with the base stage of triode Q3, the colelctor electrode of triode Q2 and triode The base stage of Q1 connects, and the base stage of triode Q3 and signal input part, resistance R4 is directly connected on triode Q3 Base stage on, resistance R3 is directly connected on the emitter stage of triode Q2, and resistance R1 is connected to triode Q1 Emitter stage and base stage between,
Bootstrap circuit boost is made up of diode D1, diode D2 and electric capacity C1, electric capacity C2, diode D1 Negative pole be connected with the positive pole of diode D2 and be connected with electric capacity C1 again, electric capacity C2 is just being connected to diode D1 Between the negative pole of pole and diode D2, electric capacity C1 selects low ESR electric capacity, and diode D1, diode D2 select Selecting fast recovery diode, the emitter stage of triode Q4 is connected with negative pole, the electric capacity C2 of diode D2.
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