CN104051950A - Wide-temperature-range green laser device - Google Patents
Wide-temperature-range green laser device Download PDFInfo
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- CN104051950A CN104051950A CN201410317232.XA CN201410317232A CN104051950A CN 104051950 A CN104051950 A CN 104051950A CN 201410317232 A CN201410317232 A CN 201410317232A CN 104051950 A CN104051950 A CN 104051950A
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Abstract
The invention discloses a green laser device which comprises a pumping source, a focusing lens, a self frequency multiplication laser crystal and a frequency multiplication crystal, wherein the pumping source, the focusing lens, the self frequency multiplication laser crystal and the frequency multiplication crystal are sequentially arranged. The laser transmitting faces of the self frequency multiplication laser crystal and the frequency multiplication crystal are plated with dielectric film. The contact faces of the self frequency multiplication laser crystal and the frequency multiplication crystal are fixed together. By means of the green laser device, the frequency multiplication crystal and the self frequency multiplication laser crystal are combined to jointly output green lasers. Under the low-temperature condition, the frequency multiplication crystal is mismatched, and the green lasers are output by the self frequency multiplication laser crystal; under the normal-temperature condition, the self frequency multiplication laser crystal serves as a laser crystal to generate fundamental frequency lasers, due to the fact that the frequency multiplication crystal has the larger nonlinear coefficient and the higher laser-laser conversion efficiency, frequency multiplication is carried out on the fundamental frequency lasers through the frequency multiplication crystal to generate the green lasers for outputting, and compared with a single self frequency multiplication crystal, the laser-laser conversion efficiency and the output power are greatly improved. The gluing technology is adopted for the self frequency multiplication laser crystal and the frequency multiplication crystal, the structure is compact, and the stability is good.
Description
Technical field
The invention belongs to laser technology field, particularly a kind of laser that produces wide temperature green laser.
Background technology
Semiconductor pumped all solid state laser (being called for short DPSSL), development in recent years is rapid, it has the advantages such as high efficiency, long-life, compact conformation and good beam quality, has important application in fields such as laser drilling, cutting, welding, mark, optical communication, medical diagnosis, laser radar, laser spectral analysis, high power laser lights.
The all solid state green (light) laser of middle low power generally adopts the mode of semiconductor, laser crystal and frequency-doubling crystal to realize.Because frequency-doubling crystal is as very large in the phase matching angle temperature influence of KTP, LBO, make the rear serious mismatch of system (for example normal temperature goes to 0 DEG C of low temperature) in the time of alternating temperature, cannot realize Laser output, can not realize the application of wide temperature range.
Patent CN200810072383 has proposed a kind of design of bluish-green laser module of wide temperature, core content is that crystal module nonlinear crystal used is not single by a phase matched angle cutting, but press out of phase matching angle cutting corresponding to nonlinear crystal different temperatures according to crystal module operating ambient temperature range in the future, and on demand the use that is connected in series of the crystal of well cutting, to reach than using the wider serviceability temperature of monolithic nonlinear crystal.
By comparison, the self-frequency doubling laser crystal that this patent adopts has wider temperature and accepts scope, and without multi-angle cutting, processing is simple, and cost is low.
Patent CN102280810 has proposed a kind of high efficiency, has had the design of the frequency double laser of the LD pumping of wide temperature bandwidth, and core content is to have the laser crystal wide compared with broad absorption band and have wide temperature to accept bandwidth frequency-doubling crystal.
By comparison, this patent has met the requirement of laser to high-output power under wide temperature range use and normal temperature, better effects if simultaneously.
Summary of the invention
The present invention is directed to deficiency and the important need of current green laser, a kind of wide temperature green (light) laser based on self-frequency-doubling crystal and frequency-doubling crystal is provided.
term explanation:
1, LD, the abbreviation of semiconductor laser;
2, Nd:YCOB, the general abbreviation of the borate doped calcium oxygen of neodymium yttrium;
3, Nd:GdCOB, the general abbreviation of the borate doped calcium oxygen of neodymium gadolinium;
4, KTP, the general abbreviation of potassium titanium oxide phosphate;
Technical scheme of the present invention is as follows:
A kind of wide temperature green (light) laser.This laser is made up of semiconductor pumping sources, condenser lens, self-frequency doubling laser crystal and frequency-doubling crystal and surface dielectric film, can realize the green laser output of 530nm (or 545nm).
The logical light face of described self-frequency doubling laser crystal and frequency-doubling crystal is coated with deielectric-coating, is arranged in order, and crystal is in contact with one another face and fixes with ultraviolet glue, wherein,
Described frequency-doubling crystal is potassium titanyl oxygenic phosphate(KTP) crystal (KTP);
Described self-frequency doubling laser crystal is neodymium-doped oxygen crystals of calcium salts, comprises the borate doped calcium oxygen of neodymium yttrium (Nd:YCOB) or the borate doped calcium oxygen of neodymium gadolinium (Nd:GdCOB);
Described semiconductor pumping sources is the semiconductor laser (LD) that produces 808nm laser.
According to the present invention, the cut direction of described frequency-doubling crystal ktp crystal is 1060nm(or 1090nm) the sharp direction of light of frequency multiplication generation 530nm (or 545nm), optical direction length is 0.1 ~ 10mm; Preferred length is 2 ~ 8mm, and further preferred length is 4 ~ 6mm.
In the present invention, self-frequency doubling laser crystal is pressed optical direction cutting, cut direction for produce from 530nm (or 545nm) laser from frequency multiplication direction.Described self-frequency doubling laser crystal is cylindrical or cuboid; Optical direction length is 0.1 ~ 20 mm; Preferred length is 1 ~ 10mm, and further preferred length is 4 ~ 8mm.
According to the present invention, the neodymium ion doped concentration of described self-frequency doubling laser crystal Nd:YCOB or Nd:GdCOB is 0.1 ~ 30at%; Preferred neodymium ion doped concentration is 8 ~ 15at%.
According to the present invention, described self-frequency doubling laser crystal, frequency-doubling crystal glue together successively.Described gluing method adopts prior art; Preferably, can be by ultraviolet optical cement uniform fold on cemented surface, by after the cemented surface laminating of laser crystal and self-frequency doubling laser crystal, solidify by UV-irradiation.
According to the present invention, the focal length length of described condenser lens is 1 ~ 100mm, and preferred focal length length is 5 ~ 30mm.
According to the present invention, described self-frequency doubling laser crystal near the logical light face plating of semiconductor laser with the deielectric-coating to the high reflection of 1060 ~ 1090nm, 530 ~ 545nm and the deielectric-coating of the high transmission of 808nm, frequency-doubling crystal away from the logical light face plating of semiconductor laser with the deielectric-coating to the high reflection of 1060 ~ 1090nm and the deielectric-coating of 530 ~ 545nm high transmission.
The present invention proposes a kind of new design, use frequency-doubling crystal to be combined with self-frequency-doubling crystal, jointly export green laser.Under cryogenic conditions, frequency-doubling crystal mismatch, self-frequency-doubling crystal exports green laser; Under normal temperature condition, self-frequency-doubling crystal produces fundamental frequency light as laser crystal, because frequency-doubling crystal has larger non linear coefficient, higher light light conversion efficiency, make fundamental frequency light produce green laser output by frequency-doubling crystal frequency multiplication, compare single self-frequency-doubling crystal, greatly improved light light conversion efficiency and power output.
Self-frequency doubling laser crystal of the present invention and frequency-doubling crystal adopt bonding technique, compact conformation, and good stability, has realized wide temperature green laser output.
Brief description of the drawings
Fig. 1 is schematic diagram of the present invention.
Description of reference numerals: 1. semiconductor laser (LD), 2. condenser lens, 3. self-frequency doubling laser crystal, 4. frequency-doubling crystal, 5. 530nm (or 545nm) green laser.
?
Embodiment
Below in conjunction with embodiment, the present invention is described further, but is not limited to this.
In the following ways logical light face is described in order to illustrate in more succinct embodiment: self-frequency doubling laser crystal 3 is called front surface near the logical light face of LD, is rear surface away from the logical light face of LD.Frequency-doubling crystal 4 is front surface near the logical light face of LD, is rear surface away from the logical light face of LD.
embodiment 1:a kind of green (light) laser, comprises the semiconductor laser 1, condenser lens 2, self-frequency doubling laser crystal 3 and the frequency-doubling crystal 4 that are arranged in order along light path.
Structure as shown in Figure 1, emission wavelength is the semiconductor laser 1 of 808nm, be positioned over before condenser lens 2() focal length on [focal length is length, it not particular location, it is unclear that panesthesia " is placed on focal length " implication, refer to focus? ], the focusing length of condenser lens 2 is 5mm, self-frequency doubling laser crystal 3 is positioned over after condenser lens 2() focal length on.
Self-frequency doubling laser crystal 3 is Nd:YCOB crystal, Nd doping content is 8at%, optical direction length is 5mm, cut direction is the phase matched direction that produces 530nm (or 545nm) laser from frequency multiplication, and the front surface deielectric-coating of self-frequency doubling laser crystal 3 is to the high deielectric-coating reflecting of 1060 ~ 1090nm, 530 ~ 545nm and the deielectric-coating of the high transmission of 808nm.
Frequency-doubling crystal 4 is KTP, and cut direction is the phase matched direction that frequency multiplication produces 530nm (or 545nm) laser, optical direction length 5mm.The rear surface plating of frequency-doubling crystal 4 is with the deielectric-coating to the high reflection of 1060 ~ 1090nm and the deielectric-coating of 530 ~ 545nm high transmission.
Under normal temperature state, in the time of pumping source transmitting 808nm laser, produce 530nm (or 545nm) Laser output through self-frequency-doubling crystal and frequency-doubling crystal acting in conjunction.
Under low-temperature condition, in the time of pumping source (LD) transmitting 808nm laser, produce 530nm (or 545nm) Laser output through self-frequency doubling laser crystal 3 effects.
embodiment 2:a kind of green (light) laser, comprises semiconductor laser 1, condenser lens 2, and self-frequency doubling laser crystal 3, frequency-doubling crystal 4, is arranged in order along light path.
As shown in Figure 1, the semiconductor laser 1 that emission wavelength is 808nm, is positioned on the focal length before condenser lens 2 structure, and the focusing length of condenser lens 2 is 5mm, and self-frequency doubling laser crystal 3 is positioned on the focal length after condenser lens 2.
Self-frequency doubling laser crystal 3 is Nd:GdCOB crystal, Nd doping content is 8at%, optical direction length is 5mm, cut direction is the phase matched direction that produces 530nm (or 545nm) laser from frequency multiplication, self-frequency doubling laser crystal 3 front surface deielectric-coating are to the high deielectric-coating reflecting of 1060 ~ 1090nm, 530 ~ 545nm and the deielectric-coating of the high transmission of 808nm
Frequency-doubling crystal 4 is KTP, and cut direction is the phase matched direction that frequency multiplication produces 530nm (or 545nm) laser, optical direction length 5mm.The rear surface plating of frequency-doubling crystal 4 is with the deielectric-coating to the high reflection of 1060 ~ 1090nm and the deielectric-coating of 530 ~ 545nm high transmission.
Under normal temperature state, in the time of pumping source transmitting 808nm laser, produce 530nm (or 545nm) Laser output through self-frequency doubling laser crystal 3 and frequency-doubling crystal 4 actings in conjunction.
Under low-temperature condition, in the time of pumping source transmitting 808nm laser, produce 530nm (or 545nm) Laser output through self-frequency doubling laser crystal 3 effects.
embodiment 3:a kind of green (light) laser, comprises semiconductor laser 1, condenser lens 2, and self-frequency doubling laser crystal 3, frequency-doubling crystal 4, is arranged in order along light path.
As shown in Figure 1, the semiconductor laser that emission wavelength is 808nm, is positioned on the focal length before condenser lens 2 structure, and the focusing length of condenser lens 2 is 5mm, and self-frequency doubling laser crystal 3 is positioned on the focal length after condenser lens 2.
Self-frequency doubling laser crystal 3 is Nd:YCOB crystal, Nd doping content is 20at%, optical direction length is 2mm, cut direction is the phase matched direction that produces 530nm (or 545nm) laser from frequency multiplication, the deielectric-coating of self-frequency doubling laser crystal 3 front surfaces is to the high deielectric-coating reflecting of 1060 ~ 1090nm, 530 ~ 545nm and the deielectric-coating of the high transmission of 808nm
Frequency-doubling crystal 4 is KTP, and cut direction is the phase matched direction that frequency multiplication produces 530nm (or 545nm) laser, optical direction length 5mm.Frequency-doubling crystal 4 rear surface platings are with the deielectric-coating to the high reflection of 1060 ~ 1090nm and the deielectric-coating of 530 ~ 545nm high transmission.
Under normal temperature state, in the time of pumping source transmitting 808nm laser, produce 530nm (or 545nm) Laser output through self-frequency doubling laser crystal 3 and frequency-doubling crystal 4 actings in conjunction.
Under low-temperature condition, in the time of pumping source transmitting 808nm laser, produce 530nm (or 545nm) Laser output through the effect of self-frequency doubling laser crystal 3.
embodiment 4:a kind of green (light) laser, comprises semiconductor laser 1, condenser lens 2, and self-frequency doubling laser crystal 3, frequency-doubling crystal 4, is arranged in order along light path.
As shown in Figure 1, the semiconductor laser that emission wavelength is 808nm, is positioned on the focal length before condenser lens 2 structure, and the focusing length of condenser lens 2 is 5mm, and self-frequency doubling laser crystal 3 is positioned on the focal length after condenser lens 2.
Self-frequency doubling laser crystal 3 is Nd:GdCOB crystal, Nd doping content is 5at%, optical direction length is 8mm, cut direction is the phase matched direction that produces 530nm (or 545nm) laser from frequency multiplication, self-frequency doubling laser crystal 3 front surface deielectric-coating are to the high deielectric-coating reflecting of 1060 ~ 1090nm, 530 ~ 545nm and the deielectric-coating of the high transmission of 808nm
Frequency-doubling crystal 4 is KTP, and cut direction is the phase matched direction that frequency multiplication produces 530nm (or 545nm) laser, optical direction length 5mm.Frequency-doubling crystal 4 rear surface platings are with the deielectric-coating to the high reflection of 1060 ~ 1090nm and the deielectric-coating of 530 ~ 545nm high transmission.
Under normal temperature state, in the time of pumping source transmitting 808nm laser, produce 530nm (or 545nm) Laser output through self-frequency doubling laser crystal 3 and frequency-doubling crystal 4 actings in conjunction.
Under low-temperature condition, in the time of pumping source transmitting 808nm laser, produce 530nm (or 545nm) Laser output through self-frequency doubling laser crystal 3 effects.
Claims (10)
1. a green (light) laser, it is characterized in that, comprise the pumping source, condenser lens, self-frequency doubling laser crystal and the frequency-doubling crystal that are arranged in order along light path, logical light face at described self-frequency doubling laser crystal and frequency-doubling crystal is coated with deielectric-coating, and the face that is in contact with one another of self-frequency doubling laser crystal and frequency-doubling crystal is fixed together.
2. green (light) laser as claimed in claim 1, is characterized in that, described pumping source is the semiconductor laser that produces 808nm laser.
3. green (light) laser as claimed in claim 1, is characterized in that, described self-frequency doubling laser crystal is cylindrical or cuboid, cuts by optical direction.
4. green (light) laser as claimed in claim 1, is characterized in that, described self-frequency doubling laser crystal optical direction length is 0.1 ~ 20 mm; Preferred length is 1 ~ 10mm, and further preferred length is 4 ~ 8mm.
5. green (light) laser as claimed in claim 1, is characterized in that, described self-frequency doubling laser crystal is Nd:YCOB or Nd:GdCOB, and its neodymium ion doped concentration is 0.1 ~ 30at%; Preferred neodymium ion doped concentration is 8 ~ 15at%.
6. green (light) laser as claimed in claim 1, is characterized in that, described frequency-doubling crystal is ktp crystal, and its cut direction is optical direction, and optical direction length is 0.1 ~ 10mm; Preferred length is 2 ~ 8mm.
7. green (light) laser as claimed in claim 1, is characterized in that, the focal length length of described condenser lens is 1 ~ 100mm, and preferred focal length length is 5 ~ 30mm.
8. green (light) laser as claimed in claim 1, it is characterized in that, described self-frequency doubling laser crystal near the logical light face plating of semiconductor laser with the deielectric-coating to the high reflection of 1060 ~ 1090nm, 530 ~ 545nm and the deielectric-coating to the high transmission of 808nm, frequency-doubling crystal away from the logical light face plating of semiconductor laser with the deielectric-coating to the high reflection of 1060 ~ 1090nm and the deielectric-coating to 530 ~ 545nm high transmission.
9. green (light) laser as claimed in claim 1, it is characterized in that, the face that is in contact with one another of described self-frequency doubling laser crystal and frequency-doubling crystal is fixed together with ultra-violet curing glue, concrete operation method be by ultraviolet optical cement uniform fold on cemented surface, by after the cemented surface laminating of laser crystal and self-frequency doubling laser crystal, curing by UV-irradiation.
10. green (light) laser as claimed in claim 1, is characterized in that, described semiconductor laser is positioned on the focal length before condenser lens, and self-frequency doubling laser crystal is positioned on condenser lens focal length below.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410317232.XA CN104051950B (en) | 2014-07-04 | 2014-07-04 | Wide-temperature-range green laser device |
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| CN201410317232.XA CN104051950B (en) | 2014-07-04 | 2014-07-04 | Wide-temperature-range green laser device |
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| CN104051950A true CN104051950A (en) | 2014-09-17 |
| CN104051950B CN104051950B (en) | 2017-01-11 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058633A (en) * | 2016-06-01 | 2016-10-26 | 青岛镭视光电科技有限公司 | Dual-wavelength laser |
| CN110247294A (en) * | 2019-07-31 | 2019-09-17 | 中国科学院理化技术研究所 | A kind of ultraviolet laser apparatus using laser self frequency-doubling crystal |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070153850A1 (en) * | 2003-06-30 | 2007-07-05 | Nova Phase, Inc. | Doped stoichiometric lithium niobate and lithium tantalate for self-frequency conversion lasers |
| CN101938082A (en) * | 2010-03-11 | 2011-01-05 | 山东大学 | Low-power green laser pen |
| WO2011085530A1 (en) * | 2010-01-13 | 2011-07-21 | 山东大学 | Low-power green laser pen |
| CN102280810A (en) * | 2011-06-20 | 2011-12-14 | 青岛镭创光电技术有限公司 | Frequency-doubling laser with wide temperature working range |
| CN103594914A (en) * | 2013-11-11 | 2014-02-19 | 青岛镭视光电科技有限公司 | Yellow orange light laser based on self frequency-doubling laser crystal |
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2014
- 2014-07-04 CN CN201410317232.XA patent/CN104051950B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070153850A1 (en) * | 2003-06-30 | 2007-07-05 | Nova Phase, Inc. | Doped stoichiometric lithium niobate and lithium tantalate for self-frequency conversion lasers |
| WO2011085530A1 (en) * | 2010-01-13 | 2011-07-21 | 山东大学 | Low-power green laser pen |
| CN101938082A (en) * | 2010-03-11 | 2011-01-05 | 山东大学 | Low-power green laser pen |
| CN102280810A (en) * | 2011-06-20 | 2011-12-14 | 青岛镭创光电技术有限公司 | Frequency-doubling laser with wide temperature working range |
| CN103594914A (en) * | 2013-11-11 | 2014-02-19 | 青岛镭视光电科技有限公司 | Yellow orange light laser based on self frequency-doubling laser crystal |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058633A (en) * | 2016-06-01 | 2016-10-26 | 青岛镭视光电科技有限公司 | Dual-wavelength laser |
| CN110247294A (en) * | 2019-07-31 | 2019-09-17 | 中国科学院理化技术研究所 | A kind of ultraviolet laser apparatus using laser self frequency-doubling crystal |
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| CN104051950B (en) | 2017-01-11 |
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