CN104051673B - The manufacture method of organic assembly, the manufacture device of organic assembly and organic assembly - Google Patents

The manufacture method of organic assembly, the manufacture device of organic assembly and organic assembly Download PDF

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CN104051673B
CN104051673B CN201410096344.7A CN201410096344A CN104051673B CN 104051673 B CN104051673 B CN 104051673B CN 201410096344 A CN201410096344 A CN 201410096344A CN 104051673 B CN104051673 B CN 104051673B
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sealant
intermediate layer
mentioned
organic
isolated
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CN104051673A (en
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石川拓
林辉幸
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention provides a kind of manufacture method of organic assembly, the manufacture device of organic assembly and organic assembly that can suppress moisture and be immersed in organic EL element.The manufacture method of the organic assembly includes following process：Process is inputted, inputs the substrate formed with intermediate layer on the 1st sealant, the 1st sealant is used to seal the organic layer on one or more isolated walls and anode；And eatch-back process, it is etched back to forming the intermediate layer on aforesaid substrate, perform above-mentioned eatch-back process, until the 1st sealant at least one isolated wall in said one or multiple isolated walls at least a portion from above-mentioned intermediate layer be exposed to can with untill the degree that the 2nd sealant of film forming is in contact in subsequent processing.

Description

The manufacture method of organic assembly, the manufacture device of organic assembly and organic assembly
Technical field
The present invention relates to a kind of manufacture method of organic assembly, the manufacture device of organic assembly and organic assembly.
Background technology
In recent years, such as electroluminescent is being developed（EL：electro Luminescence）Organic EL member Part.Organic EL element has the following advantages that：With Braun（braun）Pipe etc. is less compared to consumption electric power, also, it sends out for itself Light, visual angle is excellent etc. compared with liquid crystal display.
On the other hand, organic EL element is afraid of water.Therefore, when portion is immersed when moisture is from organic EL element the defects of, can cause Luminosity reduces, or produces and be referred to as stain（dark spot）Not light-emitting zone.Therefore, sometimes will be in organic EL element Surface formed such as sealant with moisture barrier properties.In this case, as by that will not cause to damage to organic EL element Low temperature process formed and require the sealant of moisture barrier properties, use the inorganic layer such as silicon nitride sometimes.
But worry situations below：In above-mentioned sealant, the side of the opening of moisture self-electrode pad is immersed, and immerses Moisture afterwards makes organic EL element deteriorate and shorten the life-span.
Therefore, it is also proposed that a kind of intermediate layer by being laminated more than 1 layer on organic EL element（Planarization layer）With 1 layer The method that the multi-layer sealed layer that barrier layer above forms carrys out sealing organic el element（For example, referring to patent document 1.）.
Patent document 1：Japanese Unexamined Patent Publication 2012-253036 publications
However, in patent document 1, need mask to carry out the film forming in intermediate layer, furthermore, it is desirable to be masked with Contraposition between substrate, therefore productivity ratio reduces and manufacturing cost uprises the problem of such in the presence of making.
The content of the invention
In view of the above-mentioned problems, the purpose of the present invention is：Cost can suppressed relatively low and do not reducing productivity ratio In the case of formed with compared with high sealing performance seal construction device.
In order to solve the above problems, a technical scheme provides a kind of manufacture method of organic assembly, it is characterised in that this has The manufacture method of machine part includes following process：Process is inputted, in the input process, inputs on the 1st sealant and is formed There is the substrate in intermediate layer, the 1st sealant is used to seal the organic layer on one or more isolated walls and anode；And return Process is lost, in the eatch-back process, is etched back to forming the intermediate layer on aforesaid substrate, performs above-mentioned eatch-back process, directly At least a portion of the 1st sealant on at least one isolated wall in above-mentioned one or more isolated walls is in above-mentioned Interbed be exposed to can with untill the degree that the 2nd sealant of film forming is in contact in subsequent processing.
In addition, in order to solve the above problems, another technical scheme provides a kind of manufacture device of organic assembly, and its feature exists In the manufacture device of the organic assembly includes：1st film formation device, it is used to form the 1st sealant, and the 1st sealant is used for will Organic layer sealing on the one or more isolated walls formed on substrate and the anode formed on substrate；2nd Film formation device, it is used to apply intermediate layer on above-mentioned 1st sealant；And Etaching device, it is used for above-mentioned intermediate layer It is etched back, above-mentioned Etaching device is etched back to above-mentioned intermediate layer, until in said one or multiple isolated walls at least At least a portion of the 1st sealant on one isolated wall is exposed to from above-mentioned intermediate layer can be with the film forming in subsequent processing The degree that is in contact of the 2nd sealant untill.
In addition, in order to solve the above problems, another technical scheme provides a kind of organic assembly, it is characterised in that for On the 1st sealant that organic layer on one or more isolated walls and anode is sealed, so that at least one isolated wall On the mode of at least a portion exposure of the 1st sealant form intermediate layer, the 2nd sealant on above-mentioned intermediate layer with from should The mode that above-mentioned 1st sealant that intermediate layer exposes is in contact is formed.
Using the technical scheme, can be formed in the case where suppressing relatively low by cost and not reducing productivity ratio with compared with The device of the seal construction of high sealing performance.
Brief description of the drawings
Fig. 1's（a）It is the general profile chart of the organic assembly of an embodiment, Fig. 1's（b）It is to have machine for what is compared The general profile chart of part.
Fig. 2 is the overall structure figure of the manufacture device of the organic assembly of an embodiment.
Fig. 3 A are the figures that organic EL element is formed on the substrate formed with isolated wall of an embodiment.
Fig. 3 B are the 1st sealant of formation on the substrate provided with organic EL element and the figure in intermediate layer of an embodiment.
Fig. 3 C are the figures for being etched back to intermediate layer and forming the 2nd sealant of an embodiment.
Fig. 3 D are covering organic EL element and its periphery using emulsion sheet and being carried out to electrode pad portion for an embodiment The figure for etching and making it be open.
Fig. 4 is the formation example of the isolated wall of an embodiment.
Fig. 5 is the figure for illustrating the effect of the backflow of an embodiment.
Fig. 6 is to be etched back and formed the figure of the 2nd sealant to intermediate layer in the variation 1 of an embodiment.
Fig. 7 is to be etched back and formed the figure of the 2nd sealant in the variation 2 of an embodiment to intermediate layer.
Fig. 8 A are to repeat the formation in intermediate layer and the figure of eatch-back in the variation 3 of an embodiment.
Fig. 8 B are the figures for forming the 2nd sealant after eatch-back is repeated in the variation 3 of an embodiment.
Fig. 8 C are using emulsion sheet covering organic EL element and its periphery and to electrode in the variation 3 of an embodiment The figure that welding disk is etched and makes it be open.
Fig. 9 is the general profile chart of an example of the etching process device for representing an embodiment.
Figure 10 is the general profile chart of an example of the film formation device for representing an embodiment.
Figure 11 A are the figures of an example of the unstrpped gas supplying structure body for representing an embodiment.
Figure 11 B are the figures for plasma excitation one example of structure for gas supply body for representing an embodiment.
Figure 12 is the figure for illustrating the lit-par-lit structure example of the sealant of an embodiment.
Embodiment
Hereinafter, with reference to the accompanying drawings of the form for implementing the present invention.In addition, in the present description and drawings, for reality Identical structure in matter, marks identical reference and the repetitive description thereof will be omitted.
Introduction
Generally, organic EL element is afraid of water.When portion is immersed when moisture is from organic EL element the defects of, luminosity can be caused to drop It is low, or produce the not illuminating part region for being referred to as stain.Therefore, to be formed on the surface of organic EL element with moisture barrier properties Sealant.For example, such as Fig. 1（a）With Fig. 1's（b）It is shown, in glass substrate S（Hereinafter referred to as make substrate S.）On formed and be used for The sealant 101 of sealing organic el element 50（1st sealant）.
But even if sealant 101 is set, such as Fig. 1（b）It is shown, in device fabrication, after manufacture, moisture The top of meeting self-electrode welding disk 52 enters and is immersed in organic EL element 50, now organic EL element 50 can be made to deteriorate and shorten The life-span of element.
Therefore, organic EL element 50 is immersed in order to suppress moisture, in the organic assembly using present embodiment manufacture, Such as Fig. 1（a）It is shown, isolated wall is provided between organic EL element 50 and electrode pad portion 52（Dike）120, sealant 101 Top sealant 105 is embedded to the part on the top of sealant 101 at position B on isolated wall 120（2nd Sealant）In state and sealant 105（2nd sealant）Contact and be adjacent to.Thus, formed at the B of position for suppressing water The wall portion that sub-dip enters.
Using said structure, in device fabrication, the moisture quilt that the top of self-electrode welding disk 52 is immersed after manufacture Wall portion stops and is not easy to be immersed in the region A of organic EL element 50.Thereby, it is possible to suppress moisture to cause organic EL element 50 bad Change and make the situation of its lost of life.Manufacture device hereinafter, with reference to the accompanying drawings of the organic assembly of present embodiment and organic The manufacture method of device.
The manufacture device of organic assembly
First, reference picture 2 illustrates the overall structure of the manufacture device of the organic assembly of one embodiment of the present invention.Separately Outside, the action of the manufacture device of the organic assembly of one embodiment of the present invention is illustrated referring especially to Fig. 3 A~Fig. 3 D.Fig. 2 is this The overall structure figure of the manufacture device of the organic assembly of embodiment.Fig. 3 A~Fig. 3 D are represented for manufacturing present embodiment The figure of each operation of organic assembly.
The manufacture device 1 of organic assembly is used for input substrate S loading interlocking module certainly（LLM）10 have cleaning successively Device（Pretreatment）12nd, shift module（TM）14th, evaporation coating device 16, shift module（TM）18th, film formation device A20, shift module （TM）22nd, film formation device B24, loading interlocking module（LLM）26th, film formation device C28, heater 30（Backflow）, Etaching device 32nd, film formation device D34, the laminating apparatus 36 of emulsion sheet and pad Etaching device 38.
Part untill in said structure, bootstrap loading interlocking module 10 plays loading interlocking module 26 is right in a vacuum The production line that substrate S is handled（Japanese：インライン）Apparatus structure.Shift module（TM）14th, 18,22 be to be used for Join substrate S device between adjacent device, conveying substrate S can be carried out using such as transfer robot.But shift module （TM）14th, 18,22 carrying methods conveyed are not limited to this, and roller conveying etc. can also be used to be conveyed.
The input of substrate
Loading interlocking module 10 plays the effect for joining substrate S to the cleaning device 12 of vacuum atmosphere from outside device. The substrate S joined a example is represented in figure 3 a.For example, as shown in Fig. 3 A " S0 ", on the substrate S joined It is already formed with isolated wall 110,120 and forms such as ITO of anode（Indium Tin Oxide：Tin indium oxide）、 IGZO, ZnO, graphene etc..Hereinafter, as anode, illustrated by taking ITO as an example.
Anode layer 90 and electrode pad portion 52 are formed by ITO.Photoetching can also be used（Exposure）Technology forms isolated wall 110、120.That is, isolated wall 110,120 can be by being applied on substrate S（Spin coated）It is photosensitive organic The resins such as polyimides and expose, the mode developed for pattern-like is formed.The isolated wall 110,120 formed is moved back Fire processing.Thereby, it is possible to remove the moisture in isolated wall 110,120.
As shown in Fig. 3 A " S1 ", isolated wall 110 is the isolated wall of the formation of organic EL element 50.Isolated wall 120 be the isolated wall for suppressing moisture immersion.But the function of each isolated wall is not limited to this, for example, isolated wall 110 also have the function for the immersion for suppressing moisture.
In the present embodiment, 1 isolated wall 120 is provided only between isolated wall 110 and electrode pad portion 52.But It is that the formation pattern of isolated wall is not limited to this, can also be formed between isolated wall 110 and electrode pad portion 52 multiple Isolated wall.For example, in Fig. 4, between isolated wall 110 and metal welding pan portion 52, with several μm of interval formed with isolation This 3 isolated walls of wall portion 120,130,140.In the inner side of isolated wall 110 formed with organic EL element 50.Isolated wall 120th, 130,140 this 3 isolated walls are set in a manner of surrounding organic EL element 50 and isolated wall 110.That is, with Centered on organic EL element 50, gone from inner circumferential side towards outer circumferential side formed with isolated wall 110,120,130,140, in outermost Formed with electrode pad portion 52.Herein, it is illustrated that 1 electrode pad portion 52, but this is not limited to, it can set in the circumferential more Individual electrode pad portion 52.
In addition, isolated wall 110 is an example of 1st isolated wall adjacent with organic layer.Isolated wall 120, 130th, 140 positioned at the outside of the 1st isolated wall, is located at the 1st isolated wall and electrode pad portion in a manner of surrounding organic layer Between the isolated wall of one or more the 2nd an example.
The shape that Fig. 3 A illustrate isolated wall is returned to, in the present embodiment, the height of isolated wall 110,120 is substantially It is identical, it is 2 μm or so.In addition, the inclination of the side wall of isolated wall 110,120（Angle）Also it is roughly the same.Isolated wall 120 Width be at least narrower than the width of the isolated wall 110 in the region A of organic EL element 50.Isolated wall 120 has in root side There is several μm or so of width preferable.In addition, formed must be thinner than the part of root side for the part of 120 preferred tip side of isolated wall. Furthermore, it is contemplated that forming the intermediate layer on isolated wall 120, compared with trapezoidal shape, the tip side of isolated wall 120 is preferred For rounded shapes.Intermediate layer is described below.
Cleaning
In cleaning device（Pretreatment）In 12, the substrate S that have input is cleaned.An example as cleaning method Son, following oxygen radical cleaning method can be included：Oxygen plasma is generated by high-frequency discharge, utilizes the oxygen radical of generation To make oxidation of organic compounds and decomposition, the organic matter of substrate surface is thus removed.As cleaning base plate S method, and it is unlimited In by cleaning device（Pretreatment）12 cleaning methods carried out.
The film forming of organic layer
In evaporation coating device 16, using vacuum vapour deposition in ITO（Anode layer）Formed on 90 by hole injection layer, hole The organic layer that transport layer, blue light-emitting, red light luminescent layer, green light emitting layer and electron transfer layer are formed.Organic layer into Film method is not limited to the evaporation coating method carried out by evaporation coating device 16.
The film forming of cathode layer
In film formation device A20, such as silver, aluminium, aluminium alloy, lithium-aluminium alloy or magnesium and silver is deposited using pattern mask Alloy etc..Thus, the film of cathode layer 92 is formed on electron transfer layer.The film build method of cathode layer is not limited to be filled by film forming Put the evaporation coating method of A20 progress.
Thus, as shown in Fig. 3 A " S1 ", cathode layer 92 is formed using film formation device A20, using evaporation coating device 16 in ITO （Anode layer）The stacked film of organic layer is formed between 90 and cathode layer 92.So, formed in the inner side of isolated wall 110 organic EL element 50.In addition, in the accompanying drawing after Fig. 3 B and Fig. 3 B, anode layer 90 and cathode layer 92 in organic EL element 50 are omitted Diagram.
The film forming of sealant
In film formation device B24, CVD is utilized（Chemical Vapor Deposition：Chemical vapor deposition）Processing comes Form the sealant 101 for isolated wall 110,120 and organic EL element 50 to be sealed.Sealant 101 both can be by for example Silicon nitride（SiN）Formed, can also be by silicon oxynitride（SiON）Formed.Film formation device B24 structure is explained below（Figure 10）.
In the case where to form the silicon nitride film as sealant 101, argon is supplied to film formation device B24（Ar）Gas, nitrogen （N2）Gas, hydrogen（H2）Gas and silane-based gas.As silane-based gas, such as silane can be used（SiH4）Gas, disilane Gas（Si2H6）Deng.Nitrogen and hydrogen can also be substituted and supply ammonia（NH3）.Supplied alternatively, it is also possible to substitute silane gas To other gases containing Si, such as trimethylsilyl amine（TSA）, tetraethyl orthosilicate（TEOS）.
As shown in Fig. 3 B " S2 ", sealant 101 is formed in isolated wall 110,120, organic EL element 50 and electrode On pad P.The thickness of sealant 101 is 50nm~200nm or so.
It can also be carried out using film formation device B24 by aluminum oxide（Al2O3）The film forming of the sealant 101 of composition.Aluminum oxide Sealant 101 have the transparency it is higher such the advantages of.Alternatively, it is also possible to by combining silicon nitride layer and alumina layer come shape Into sealant 101.In this case, for example, in order to further suppress the immersion of moisture, preferably on the film of silicon nitride layer The film forming of alumina layer is carried out, untill specific thickness is reached.Silicon nitride layer can also be carried out into using such as CVD processing Film.Alumina layer can also utilize such as CVD processing or ALD（Atomic Layer Deposition：Ald）Processing To carry out film forming.In addition to alumina, sealant 101 can also be magnesia（MgO）.In addition, sealant 101 is to be used to incite somebody to action One example of the 1st sealant of the organic layer sealing on one or more isolated walls and anode.In addition, film formation device B24 Be for carry out the 1st sealant film forming the 1st film formation device an example, 1 sealant will be formed in it is on substrate, Organic layer sealing on one or more isolated walls and anode.
The output of substrate
Loading interlocking module 26 is used to the vacuum atmosphere in substrate S self-contained film devices B24 being handed off to outside（Air）.
The formation in intermediate layer
In film formation device C28, coating（Spin coated）The fluent material of acrylate or vinyl compound and formed Interbed.As a result, as shown in Fig. 3 B " S3 ", intermediate layer 103 is formed on sealant 101.Intermediate layer 103, which plays protection, to be had Machine EL element 50 and the function of will attach to substrate S dust burial.
The fusing point of material for forming intermediate layer 103 is relatively low, for example, the fluent material using fusing point below 100 DEG C. After intermediate layer 103 is formed, solidification is performed（Japanese：キュア）Processing.When carrying out curing process, irradiation UV can be used Light, irradiating electron beam, plasma curing etc..Now, the model of damage will not caused to organic EL element 50 with treatment temperature Enclose interior handled.
Intermediate layer 103 is the layer formed by the material of the liquid condition with mobility.Therefore, in surface tension effects Under, positioned at the corner of the sealant 101 of substrate（Protuberance）On film be thinner than the film on the flat part of the sealant 101. Therefore, as described above, 120 preferred tip side of isolated wall formed must be thinner than root side.Thus, as shown in Fig. 3 B " S3 ", shape Thickness Th1 into the intermediate layer 103 on isolated wall 120 is thinner than the intermediate layer 103 to be formed on isolated wall 110 Thickness Th2.Also, in order to relatively thinly form intermediate layer 103, the tip side for being preferably isolated wall portion 120 is rounded shapes.In addition, Film formation device C28 is used in the 1st sealant（Sealant 101）On apply intermediate layer 103 the 2nd film formation device an example Son.
Intermediate layer 103 can also utilize hot CVD or evaporation by hydrocarbon system compound（CxHyOzNW；Z, w includes 0）Material shape Into.By hydrocarbon system compound（Hydrocarbon material）The intermediate layer 103 of composition is formed for example, by vacuum vapour deposition.Specifically, by The hydrocarbon material in solid state is heated at room temperature, evaporates hydrocarbon material, utilizes the conveying gas conveying hydrocarbon material such as argon gas The steam of material, it is supplied to sealant 101.When supplying the steam of hydrocarbon material, by the way that substrate S is remained than hydrocarbon material The low-melting temperature of material, so that the devaporation for the hydrocarbon material being supplied on sealant 101.Thereby, it is possible to formed Intermediate layer 103.The thickness in intermediate layer 103 is, for example, 0.5 μm~2.0 μm.
The molecular formula of representational hydrocarbon material, molecular weight and fusing point used in intermediate layer 103 are represented in table 1 below In.In order to suppress the deterioration of organic EL element 50, preferably using the hydrocarbon material that fusing point is less than about 100 DEG C.In order to more may be used The deterioration of organic EL element 50 is prevented by ground, the hydrocarbon material for the use of fusing point being more preferably less than about 50 DEG C.
Table 1
Molecular formula Molecular weight Fusing point (DEG C)
C20H42 282 36
C21H44 296 42
C22H46 310 46
C23H48 324 47
C24H50 338 51
C25H52 352 54
C28H58 396 62
C30H62 422 66
C40H82 562 82
C50H102 7702 94
C60H122 842 98
In this case, it can also melt intermediate layer 103 by the reflow treatment next illustrated.Among formation During layer 103, reflow treatment can be performed, but reflow treatment can not also be performed and carry out the eatch-back of subsequent processing（Japanese：エッ チバック）Processing.In the case where performing reflow treatment, intermediate layer（CXHy）103 landfills are in particulate existing for substrate surface Deng the gap between foreign matter, the spreadability of the sealant 105 followed by film forming can be significantly improved.
Backflow
Reflow treatment is carried out using heater 30.Heater 30 is infrared by being irradiated to the intermediate layer 103 after film forming Line carrys out heating of hydrocarbon materials.Thus, make hydrocarbon material softening or the fusing in intermediate layer 103, acted on by backflow, make intermediate layer 103 flat Smoothization.The arrow of sensing " S3' " in Fig. 5 represents infrared ray.The heating-up temperature in intermediate layer 103 in hydrocarbon material softening or fusing and Within the temperature range of organic EL element 50 will not deteriorate.By making hydrocarbon material softening or fusing, it is good and flat that covering can be formed Smooth intermediate layer 103.
Contaminant particles are generally attached with substrate S.3 μm or so of contaminant particles in contaminant particles be present, because this is miscellaneous The difference of the shape of matter particulate, substrate S and contaminant particles are not covered by intermediate layer 103 and produce defective part sometimes.Lacked when producing During the portion of falling into, moisture barrier properties is likely to decrease, and this is possible to also produce harmful effect to the film process of subsequent handling, it is undesirable to this Kind situation.Therefore, it by making hydrocarbon material softening or fusing, can planarize intermediate layer 103.Thereby, it is possible to bury defective part. Enable in particular to make the corner in the intermediate layer 103 on isolated wall 110,120 to planarize.To be performed after the film forming in intermediate layer 103 During reflow treatment, the curing process after the film forming of preferred interlayer 103 preferably performs after reflow treatment.
Eatch-back
In the Etaching device 32 shown in Fig. 2, oxygen is imported into chamber（O2）, rare gas（Ar etc.）And supply high frequency Electric power, oxygen is thus set to ionize and dissociate and generate oxygen plasma.Etaching device 32 using generation after oxygen plasma come Intermediate layer 103 is etched back.Based on the shape of isolated wall 110,120, the thickness in intermediate layer 103 isolated wall 120 it On it is most thin.Therefore, as shown in Fig. 3 C " S4 ", during the eatch-back of underway interbed 103, positioned at the top of position B sealant 101 Portion exposes from intermediate layer 103 earliest.According to selection ratio, the etch-rate in intermediate layer 103 is higher than the etch-rate of sealant 101. Therefore, at the B of position, if also continuing to be etched back from after the exposure of intermediate layer 103 at the top of sealant 101, sealant 101 Top ends protrude from intermediate layer 103.
In addition, when being etched back to intermediate layer 103, sealant 101 turns into block piece and can avoid organic EL element 50 are etched or sustain damage.
As described above, the etch-back process of present embodiment is performed, until being located at least in outermost in isolated wall 110,120 At least a portion of sealant 101 on the isolated wall 120 of side is exposed to from intermediate layer 103 can be with entering in subsequent processing Untill the degree that the sealant of row film forming is in contact.
The film forming of sealant
Next, in the film formation device D34 shown in Fig. 2, pass through CVD（Chemical Vapor Deposition）Place Manage and sealant 105 is formed on intermediate layer 103.Sealant 105 both can be by such as silicon nitride（SiN）Formed, can also By silicon oxynitride（SiON）, magnesia（MgO）Deng formation.
As shown in Fig. 3 C " S5 ", sealant 105 on intermediate layer 103 is at the B of position with being exposed from intermediate layer 103 Sealant 101 is in contact.The thickness of sealant 105 is 100nm~1000nm or so.In film formation device D34, it can also incite somebody to action CVD processing and ALD processing are combined and carry out the film forming of sealant 105.
In addition, sealant 105 is an example of the 2nd sealant that film forming is carried out after being etched back to intermediate layer 103 Son.In addition, film formation device D34 is that the film forming of sealant 105 is carried out after the eatch-back in intermediate layer 103 and makes the sealant after film forming One example of 105 the 3rd film formation devices being in contact with the sealant 101 exposed from intermediate layer 103.
As shown in Fig. 3 C " S5 ", the top of sealant 101 is at the position B on isolated wall 120 with sealant 101 The state that the part on top is embedded in sealant 105 is adjacent to sealant 105（Contact）.Thereby, it is possible at least in outermost The isolated wall of side, the isolated wall 120 for the position B for being located most closely to electrode pad portion 52 are formed by sealant 101 and close The wall portion that sealing 105 is adjacent to.Thus, such as Fig. 1（a）It is shown, should even if the top of moisture self-electrode welding disk 52 is immersed Moisture can also be stopped by the wall portion formed by sealant 101 and sealant 105 and be not easy to be immersed in organic EL element.As a result, The reduction of the luminosity of the organic EL element 50 caused by moisture can be suppressed, produce the not light-emitting zone for being referred to as stain Situation.So, using present embodiment, the deterioration of organic EL element 50 caused by moisture can be suppressed and prevented machine The shortening in the life-span of part, so as to improve the reliability of product.
As shown in Fig. 3 D " S6 ", in the bonder 36 shown in Fig. 2, so that emulsion sheet 107 covers organic EL element 50 mode utilizes bonding agent（Adhesive layer）Emulsion sheet 107 is installed., can thereby, it is possible to keep the mechanical strength of organic assembly Protect organic EL element 50.Emulsion sheet 107 is formed by transparent glass, plastics.
In Etaching device 38, come emulsion sheet 107 as mask to the sealant 105 in electrode pad portion 52, centre Layer 103, sealant 101 are etched, so that electrode pad portion 52 is open.Thus, the manufacture of organic assembly is completed.
Due to making electrode pad portion 52 be open, therefore the top of moisture meeting self-electrode welding disk 52 enters.But as above institute State, moisture is stopped by the wall portion formed by sealant 101 and sealant 105 and can not be immersed in organic EL element 50.Thus, energy Enough suppress the deterioration of organic EL element 50 and prevent the reduction in the life-span of organic assembly.
The manufacture device 1 of organic assembly shown in Fig. 2 also has control unit 51.Control unit 51 has CPU（Central Processing Unit：Central processing unit）53、ROM（Read Only Memory：Read-only storage）54、RAM（Random Access Memory：Random access memory）56、HDD（Hard Disk Drive：Hard disk drive）58 and interface 59.CPU52 Whole system is controlled according to the various processing procedures being stored in above-mentioned storage region.The control letter of each device is set with processing procedure Breath, i.e. process time, chamber indoor temperature, pressure（The exhaust of gas）, RF power, high frequency voltage, various gas flows, conveying Moment etc..
Variation 1
In the case of Fig. 3 C " S5 ", at the position B on isolated wall 120, by making sealant 101 and sealant 105 are adjacent to and form wall portion, so as to block the immersion of the side of moisture self-electrode welding disk 52.On the other hand, in variation 1, As shown in Fig. 6 " S4 ", not only at the position B on isolated wall 120, at position C, D also on isolated wall 110, lead to The wall portion that is formed by sealant 101 and sealant 105 is crossed to stop the immersion of the side of moisture self-electrode welding disk 52.Now, such as Fig. 6 " S4 " shown in, performs eatch-back, until at position B, C, D sealant 101 from intermediate layer 103 exposure untill.Thus, such as Fig. 6 " shown in S5 ", sealant 105 is in contact at position B, C, D with the sealant 101 exposed from intermediate layer 103.
Using said structure, by the wall portion formed at position B, C, D, it can more reliably stop and carry out self-electrode weldering The moisture of the side of pan portion 52, so that moisture can not be immersed in organic EL element 50.Thereby, it is possible to more reliably suppress organic EL The deterioration of element 50.
Variation 2
In addition, in variation 2, as shown in Fig. 7 " S4 ", not only position B, C, D on isolated wall 110,120 Place, is not being formed at position E, F of isolated wall 110, sealant 101 and sealant 105 also contact with each other.In manufacturing process In, as shown in Fig. 7 " S4 ", eatch-back is performed, until sealant 101 exposes as from intermediate layer 103 at position B, C, D, E, F Only.In this case, intermediate layer 103 turns into the state for the side for being only formed at isolated wall.Thus, as shown in Fig. 7 " S5 ", Sealant 101 of the sealant 105 of film forming at position B, C, D, E, F with being exposed from intermediate layer 103 on intermediate layer 103 It is in contact.
Using said structure, by the wall portion formed at position B, C, D, E, F, it can more reliably stop moisture, Organic EL element 50 is immersed in so as to more reliably suppress moisture.
Variation 3
In variation 3, the formation and eatch-back in intermediate layer are repeated.For example, to forming 100nm~500nm thickness The substrate formed with intermediate layer 103 carries out the eatch-back in the intermediate layer 103 shown in Fig. 7 " S4 " after the sealant 101 of degree.It Afterwards, as shown in Fig. 8 A " S4-1 ", intermediate layer 103 is formed again.Next, as shown in Fig. 8 A " S4-2 ", to foring Intermediate layer 103 be etched back again.Next, sealant 105 is formed as shown in Fig. 8 B " S5-1 ".Herein, twice The formation and eatch-back in intermediate layer 103 are repeated, but the formation in intermediate layer 103 and the number of repetition of eatch-back are not limited to this.
Next, as shown in Fig. 8 C " S6-1 ", using viscous in a manner of making emulsion sheet 107 cover organic EL element 50 Connect agent（Adhesive layer）Emulsion sheet 107 is installed.Thereby, it is possible to keep the mechanical strength of organic assembly, organic EL element can be protected 50.Emulsion sheet 107 is formed by transparent glass, plastics.
In Etaching device 38, come emulsion sheet 107 as mask to the sealant 105 in electrode pad portion 52, centre Layer 103, sealant 101 are etched, and electrode pad portion 52 is open.Thus, the manufacture of organic assembly is completed.
Using the manufacture of the organic assembly of variation 3, formed after the formation in intermediate layer 103 and eatch-back is repeated close Sealing 105.So, the coating and eatch-back in intermediate layer 103 are carried out by being repeated several times, the shape on surface can be made more smooth, So as to make forming sealant 105（2nd sealant）When covering it is good and suppress the generation of pin hole etc..As a result, energy The enough moisture that further suppresses immerses to organic element.
Especially, the manufacture of the organic assembly of variation 3 has the effect that：For having on the surface of basalis Concavo-convex substrate, covered in the film forming of sealant 105 good.
Using the manufacture of above-mentioned embodiment and the organic assembly of 1~variation of variation 3, due to not using metal to cover Mould, it is therefore, less to the worry of particulate.In addition, photoetching when forming pattern（Exposure process）Only 1 time, can simplify and Cost degradation, it is also easy to tackle the substrate of large area.Further, since the existing devices such as LCD can be used in above-mentioned embodiment party In the manufacture of the organic assembly of formula and 1~variation of variation 3, it therefore, there is no need to carry out extra equipment investment, can suppress to manufacture Cost.
In addition, the wall portion formed by sealant 101 and sealant 105 be not limited to above-mentioned embodiment and variation 1, The position being expressly recited in 2.Intermediate layer 103 can be etched back in the range of the function in intermediate layer 103 is not damaged and The position that sealant 101 exposes forms wall portion.But wall portion is set to be formed close on the isolated wall in outside, namely To say closer to the position in electrode pad portion 52, the effect immersed for suppression moisture is higher, so it is preferred that.It is preferred, therefore, that It is located at least in being formed by close on outermost isolated wall in one or more isolated walls on substrate S are formed The wall portion that sealing 101 and sealant 105 are formed.But it is also possible at least one isolation in one or more isolated walls The wall portion formed by sealant 101 and sealant 105 is formed on wall portion.For example, it is also possible to do not formed except organic EL element Isolated wall beyond the isolated wall 110 of 50 formation, and form above-mentioned wall portion on isolated wall 110.
It this concludes the description of overall structure and the action of the manufacture device 1 of the organic assembly of present embodiment.According to above stating It is bright, intermediate layer 103 is etched back, untill sealant 101 exposes from intermediate layer 103.The sealant of film forming after back-etch 105 are in contact with the sealant 101 exposed, are consequently formed wall portion.Moisture is stopped by the wall portion and is not easy to be immersed in organic EL Element 50.Therefore, it is possible to prevent the deterioration of the organic EL element 50 caused by moisture, thereby, it is possible to maintain the longevity of organic assembly Order and improve its reliability.Especially, using present embodiment, not only after product is manufactured, can also be hindered in manufacturing process Dash point, therefore can more reliably prevent the deterioration of organic EL element.
In addition, the manufacture method of the organic assembly using present embodiment, it is not necessary to for carrying out the film forming in intermediate layer 103 Mask, without the contraposition being masked between substrate.Therefore, in the present embodiment, can suppress by cost It is relatively low and do not reduce the device that the seal construction with compared with high sealing performance is formed in the case of productivity ratio.
Apparatus structure example：Etaching device
Next, reference picture 9 illustrates the apparatus structure example of the Etaching device 32 for being etched back to intermediate layer 103, and And the explanation of reference picture 9 carries out sealant 101（Sealant 105）Film forming film formation device B24（Film formation device D34）Device Configuration example.
Etaching device 32 is retained as airtight cavity C with electrical ground, internal.Cavity C is cylindrical shape, such as by aluminium Anodized has been carried out Deng formation and its chamber inner wall surface.Etaching device 32 is connected with gas supply source (not shown). In the case of being etched back to intermediate layer 103, such as gas containing oxygen is imported into cavity C from gas supply source.
The mounting table 202 for being used for loading substrate S is provided with the inside of cavity C.Mounting table 202 is supported on supporting station.Mounting Platform 202 also plays the effect of lower electrode.That is, mounting table 202 is via adaptation (not shown) and the phase of high frequency electric source 210 Connection.Thereby, it is possible to assigned frequency is supplied from high frequency electric source 210 to mounting table 202（Such as 2MHz）Biasing high-frequency electrical Power.
Upper electrode 204 is provided with the position relative with mounting table 202 of the top of mounting table 202.Upper electrode 204 passes through It is connected by adaptation (not shown) with high frequency electric source 208.Thereby, it is possible to rule are supplied from high frequency electric source 208 to upper electrode 204 Determine frequency（Such as 40MHz）Plasma generation RF power.
Blast pipe 206 is provided with the bottom of cavity C.Blast pipe 206 is connected with exhaust apparatus (not shown).Exhaust apparatus For the gas in cavity C to be discharged.
Apparatus structure example：Film formation device
Next, the explanation of reference picture 10 carries out sealant 101（Sealant 105）Film forming film formation device B24（Film forming fills Put D34）Configuration example.Figure 10 is the longitudinal section of an example of the structure for representing film formation device.Film formation device D34 structure It is identical with film formation device B24 structure, therefore, illustrate film formation device B24 below.In addition, the film formation device B24 of present embodiment It is the CVD device that plasma is produced using radial line slot antenna.
Film formation device B24 has the cavity C of the bottomed cylindrical of such as upper surface open.Cavity C is by such as aluminium alloy shape Into.In addition, cavity C is grounded.Substantially central portion in the bottom of cavity C is provided with as the mounting portion for loading such as substrate S Mounting table 131.
Can also be that battery lead plate 132 is built-in with mounting table 131, battery lead plate 132 is connected with direct voltage source 133, Direct voltage source 133 is to the service voltage of battery lead plate 132.Thus, electrostatic force is produced on the surface of mounting table 131, so as to by substrate S Electrostatic Absorption is on mounting table 131.Alternatively, it is also possible to be, mounting table 131 is connected via adaptation 134 with high frequency electric source 135 Connect, bias electric field is applied to mounting table 131 by the RF power from high frequency electric source 135.High frequency electric source 135 can also make The power supply for being 400kHz~13.56MHz with such as frequency.High frequency electric source 135 can be by exporting RF power come to mounting table 131 apply bias electric field.In addition, high frequency electric source 135 can be by exporting RF power come the substrate to being placed in mounting table 131 S and the film formed on substrate S apply bias electric field.
In the upper opening of cavity C, electricity is provided with across the seal 140 such as the O-ring seals for ensuring air-tightness Medium window 141.Using the dielectric window 141 by cavity C inner sealing.Radial line slot day is provided with the top of dielectric window 141 Line 142, it is for the plasma excitation portion for the microwave for supplying plasma generation.In addition, as dielectric window 141, Such as aluminum oxide can be used（Al2O3）.In this case, dielectric window 141 is for the Nitrogen trifluoride that is used in being cleaned in dry method Gas（NF3）With patience.In addition, in order to further improve the patience for gas of nitrogen trifluoride, can also be in dielectric window Yittrium oxide is covered on the surface of 141 aluminum oxide（Y2O3）, spinelle（MgAl2O4）Or aluminium nitride（AlN）.
Radial line slot antenna 142 has the substantially cylindric antenna body 150 of lower surface opening.In antenna body The opening portion of 150 lower surface is provided with the discoid aperture plate 151 formed with multiple gaps.Can also be in antenna body 150 The top of interior aperture plate 151 sets the dielectric plate 152 formed by low consumption dielectric material.The upper table of antenna body 150 Face is connected with leading to the coaxial waveguide 154 of microwave oscillation device 153.Microwave oscillation device 153 is arranged on the outer of cavity C Portion, assigned frequency, such as 2.45GHz microwave can be sent to radial line slot antenna 142.Using said structure, from microwave The microwave propagation that oscillation device 153 is sent out is compressed and short wavelengthization by dielectric plate 152 to radial line slot antenna 142, it Afterwards, microwave produces circularly polarized wave at aperture plate 151, and from dielectric window 141 towards cavity C in radiate.
Such as substantially raw material of writing board shape is provided between mounting table 131 and radial line slot antenna 142 in cavity C Structure for gas supply body 60.It is diameter at least above substrate S that unstrpped gas supplying structure body 60, which is formed as the profile when viewing from above, Diameter toroidal.Be divided into by the unstrpped gas supplying structure body 60 in cavity C the grade of the side of radial line slot antenna 142 from The unstrpped gas of daughter formation zone R1 and the side of mounting table 131 dissociates region R2.In addition, as unstrpped gas supplying structure body 60, preferably use such as aluminum oxide.In these cases, aluminum oxide is ceramics, therefore, compared with the metal materials such as aluminium, is had High-fire resistance, high intensity.Further, since the plasma generated in the R1 of plasma generating area will not be captured, thus it is right Sufficient ion exposure can be obtained for glass substrate.Also, by irradiating sufficient ion to the film on glass substrate, The film of densification can be generated.In addition, unstrpped gas supplying structure 60 gas of nitrogen trifluoride for being used in being cleaned in dry method of body With patience.Also, can also be in the oxygen of unstrpped gas supplying structure body 60 in order to improve the patience for gas of nitrogen trifluoride Change and yittrium oxide, spinelle or aluminium nitride are covered on the surface of aluminium.
As shown in Figure 11 A, unstrpped gas supplying structure body 60 is by the system on same level in substantially latticed configuration The unstrpped gas supply pipe 61 of row is formed.Unstrpped gas supply pipe 61 sees that longitudinal section is formed as square from axis direction.In raw material Formed with multiple opening portions 62 in the mutual gap of gas supply pipe 61.The upside of unstrpped gas supplying structure body 60 grade from The plasma generated in the R1 of daughter formation zone can pass through the opening portion 62 and enter the unstrpped gas of the side of mounting table 131 Dissociate in the R2 of region.
As shown in Figure 10, formed with more on the lower surface of the unstrpped gas supply pipe 61 of unstrpped gas supplying structure body 60 Individual unstrpped gas supply mouth 63.Above-mentioned raw materials gas supply port 63 is equably configured in the face of unstrpped gas supplying structure body 60 It is interior.Unstrpped gas supply pipe 61 is connected with flue 65, and the flue 65 supplies with the unstrpped gas located at the outside of cavity C Source 64 is connected.In unstrpped gas supply source 64, such as unstrpped gas, dividually it is sealed with hydrogen（H2）With as silicon The silane gas of methane series gas（SiH4）.Valve 66 and mass flow controller 67 are provided with flue 65.By said structure, From unstrpped gas supply source 64 via flue 65 to unstrpped gas supply pipe 61 be directed respectively into regulation flow silane gas and Hydrogen.Then, the unstrpped gas dissociation region R2 from each unstrpped gas supply mouth 63 downward supply above-mentioned silane gas and Hydrogen.
In the inner peripheral surface that the plasma formation zone R1 of cavity C outer peripheral face is covered, formed with for supplying As the 1st plasma excitation gas supply port 70 of the plasma excitation gas of the raw material of plasma.1st grade from Daughter excitation is formed in many places with inner peripheral surface of the gas supply port 70 along such as cavity C.1st plasma excitation is supplied with gas It is connected to mouth 70 with the 1st plasma excitation gas supply pipe 72, the 1st plasma excitation gas supply pipe 72 Such as lead to the 1st plasma excitation gas supply source 71 located at the outside of cavity C through the side of sidewall portion of cavity C.The 1st Plasma excitation is provided with valve 73 and mass flow controller 74 with gas supply pipe 72., can be from side by said structure The plasma excitation gas of supply regulation flow in plasma generating area R1 in the cavity C of direction.In this embodiment party In formula, such as argon is sealed with as plasma excitation gas by the use of in gas supply source 71 in the 1st plasma excitation （Ar）Gas.
Such as structure and unstrpped gas supplying structure are configured with the upper surface of unstrpped gas supplying structure body 60 with being laminated The plasma excitation structure for gas supply body 80 of the structure identical substantially writing board shape of body 60.As shown in Figure 11 B, wait from Daughter excitation structure for gas supply body 80 in the 2nd plasma excitation gas supply pipe 81 of latticed configuration by forming. In addition, as plasma excitation structure for gas supply body 80, such as aluminum oxide is preferably used.Similarly, in this case, As noted previously, as aluminum oxide is ceramics, therefore, compared with the metal materials such as aluminium, there is high-fire resistance, high intensity.In addition, by In the plasma that is generated in the R1 of plasma generating area will not be captured, therefore can be filled for glass substrate The ion exposure divided.Also, by irradiating sufficient ion to the film on glass substrate, the film of densification can be generated.In addition, wait Gas ions excitation has patience with structure for gas supply body 80 for the gas of nitrogen trifluoride used in being cleaned in dry method.Also, , can also be in the oxidation of plasma excitation structure for gas supply body 80 in order to improve the patience for being directed to gas of nitrogen trifluoride Yittrium oxide or spinelle are covered on the surface of aluminium.
As shown in Figure 10, on upper surface of the 2nd plasma excitation with gas supply pipe 81 formed with multiple 2nd grades from Gas supply port 82 is used in daughter excitation.Above-mentioned multiple 2nd plasma excitations with gas supply port 82 equably configure wait from Daughter excitation is with the face of structure for gas supply body 80.Thereby, it is possible to from downside upward to plasma generating area R1 supplies plasma excitation gas.In addition, in the present embodiment, the plasma excitation is, for example, argon gas with gas. In addition, in addition to argon gas, additionally it is possible to from plasma excitation with structure for gas supply body 80 to plasma generating area R1 Supply the nitrogen as unstrpped gas（N2）.
Latticed 2nd plasma excitation with the mutual gap of gas supply pipe 81 formed with opening portion 83, The plasma generated in the R1 of plasma generating area can pass through plasma excitation structure for gas supply body 80 and original Expect structure for gas supply body 60 and enter in the unstrpped gas dissociation region R2 of lower section.
2nd plasma excitation gas supply pipe 81 is connected with flue 85, and the flue 85 is with being located at cavity C The 2nd outside plasma excitation gas supply source 84 is connected.In the 2nd plasma excitation example in gas supply source 84 As being dividually sealed with as argon gas of the plasma excitation by the use of gas and the nitrogen as unstrpped gas.Set on flue 85 There are valve 86 and mass flow controller 87.By said structure, can from the 2nd plasma excitation gas supply port 82 to etc. Gas ions formation zone R1 is supplied respectively to the nitrogen and argon gas of regulation flow.
The row for being used for discharging the atmosphere gas in cavity C is provided with the both sides for clipping mounting table 131 of the bottom of cavity C Gas port 190.Exhaust outlet 190 is connected with leading to the blast pipe 192 of the exhaust apparatus such as turbomolecular pump 191.By from the exhaust Mouth 190 is vented, and defined pressure, for example aftermentioned such 10Pa~60Pa can will be maintained in cavity C.
Film formation device B24 above is provided with control unit 100.Control unit 100 is, for example, computer, and has program storage part （It is not shown）.Control unit 100 can be both integrated with the control unit 51 shown in Fig. 2, can also be relative to control unit 51 individually Formed.Program storage part be stored with film process for forming diaphragm seal 101 on substrate S to film formation device B24 and The program that the film formation device D34 film process that diaphragm seal 105 is formed on substrate S are controlled.In addition, in program storage part Also it is stored with for the supply to above-mentioned raw materials gas, the supply of plasma excitation gas, the transmitting of microwave, drive system Action etc. be controlled and realize film formation device B24, the program of 34 film process.In addition, also stored in program storage part There is the program being controlled for the application moment of the bias electric field to being applied by high frequency electric source 135.In addition, said procedure both may be used To be stored in such as hard disk（HD）, floppy disk（FD）, CD（CD）, photomagneto disk（MO）, storage card etc. can read by computer Program in storage medium or it is installed to the program in control unit 100 from above-mentioned storage medium.Raw material is described below The supply of gas, the supply of plasma excitation gas, the application moment of the transmitting of microwave and bias electric field.
Next, the film build method for the SiN film that explanation is carried out in the film formation device B24 by being formed with upper type.Into Also SiN film can be identically formed in film device D34.In addition, the SiN film formed in film formation device B24 is diaphragm seal 101 One example, the SiN film formed in film formation device D34 are an examples of diaphragm seal 105.
First, such as in film formation device B24 startup, the supply flow rate of argon gas is adjusted.Specifically, so that supply Concentration to the argon gas in the R1 of plasma generating area reaches uniform mode to being supplied from the 1st plasma excitation with gas The supply flow rates of argon gas and the supply flow rate of the argon gas supplied from the 2nd plasma excitation with gas supply port 82 of the supply of mouth 70 It is adjusted.The supply flow rate adjustment during, such as operate exhaust apparatus 191 and in cavity C formed with reality It is configured to during the film process on border in the state of identical air-flow from the supply of each plasma excitation gas supply port 70,82 The argon gas of appropriate supply flow rate.Then, in the case where the supply flow rate imposes a condition, actual film forming is carried out to the substrate of experiment, Check whether and the film forming has equably been carried out in real estate.Because the concentration of the argon gas in the R1 of plasma generating area reaches It is not in real estate in the result of inspection therefore to the film forming that can equably carry out in the case of uniform in real estate In the case of equably carrying out film forming, the supply flow rate for changing each argon gas is imposed a condition, and the substrate of experiment is carried out again Film forming.Operated more than repeating, make the argon in the R1 of plasma generating area equably to carry out film forming in real estate The concentration of gas reaches uniform mode and sets the supply flow rate supplied from each plasma excitation gas supply port 70,82.
After the supply flow rate of each plasma excitation gas supply port 70,82 is set, start film formation device B24 In substrate S film process.First, substrate S is input in cavity C, and is adsorbed and be maintained on mounting table 131. Now, substrate S temperature maintains less than 100 DEG C, such as 50 DEG C~100 DEG C.Then, cavity C is started using exhaust apparatus 191 Interior exhaust, by the pressure in cavity C to defined pressure, such as 10Pa~60Pa, and maintain the state.In addition, base Plate S temperature is not limited to less than 100 DEG C, as long as not making the temperature that organic EL element sustains damage, this is depended on Material of organic EL element etc..
Herein, when the pressure in cavity C is less than 20Pa, it is possible to SiN film can not be properly formed on substrate S. In addition, when the pressure in cavity C is more than 60Pa, the reaction between the gas molecule in gas phase increases and is possible to produce particulate. Therefore, the pressure in cavity C is maintained into 10Pa~60Pa as described above.
After being depressurized in cavity C, from the 1st plasma excitation of side with gas supply port 70 to plasma In the R1 of formation zone supply argon gas and from the 2nd plasma excitation of lower section with gas supply port 82 to plasma generating area Supply nitrogen and argon gas in R1.Now, the concentration of the argon gas in the R1 of plasma generating area is in plasma generating area R1 Inside it is maintained uniform.In addition, nitrogen is supplied with such as 21sccm flow.From radial line slot antenna 142 towards underface Plasma generating area R1 launches 2.5W/cm with such as 2.45GHz frequency2~4.7W/cm2Power microwave.Pass through hair The microwave is penetrated, so that argon gas is plasmarized in the R1 of plasma generating area and makes nitrogen free radical（Or ion Change）.Now, the plasma absorption that the microwave advanced downwards is generated.As a result, in the R1 of plasma generating area Generate highdensity plasma.
The plasma generated in the R1 of plasma generating area passes through plasma excitation structure for gas supply body 80 and unstrpped gas supplying structure body 60 and enter lower section unstrpped gas dissociation region R2 in.From unstrpped gas supplying structure Each unstrpped gas supply mouth 63 of body 60 dissociates in the R2 of region to unstrpped gas and is fed with silane gas and hydrogen.Now, silane Gas is supplied with such as 18sccm flow, and hydrogen is supplied with such as 64sccm flow.Silane gas and hydrogen are respectively by certainly The plasma dissociation that top enters.Also, in above-mentioned free radical and the nitrogen to come from plasma generating area R1 supplies Free radical in the presence of, SiN film is deposited on substrate S.
The lit-par-lit structure example of sealant
Compared with monofilm, when it is multilayer film to make sealant 101,105, it is possible to increase change the entrance of material at interface The sealing effectiveness in path, the sealant immersed so as to be formed moisture to be less susceptible to.
Reference picture 12 briefly describes the forming method of the sealant of multilayer film.Herein, the film forming side of sealant 101 is illustrated Method, sealant 105 also can similarly carry out film forming.Figure 12 is represented in an example of the lit-par-lit structure of sealant 101 The figure of the film-forming state for applying moment and each moment of RF power.Herein, as sealant 101, enumerate to form SiN film（Nitrogen SiClx film）Example illustrate.
When forming sealant 101, timing diagram of the control unit 100 according to Figure 12 to shown in Figure 12 from high frequency electric source The application moment of 135 application RF powers is controlled.Thereby, it is possible to control the bias electric field applied to mounting table 131.Specifically For, originally control unit 100 is at a time initially supplied argon（Ar）Gas, nitrogen（N2）Gas, hydrogen（H2）Gas, silane-based gas and Microwave（μ ripples）Energy.Control unit 100 can also be controlled supply ammonia（NH3）To replace nitrogen and hydrogen.In addition, control Portion 100, which can also be controlled, supplies other gases containing Si to replace silane gas.
After supply argon gas, nitrogen, hydrogen and silane gas, somewhat hysteresis is initially supplied microwave（μ ripples）Energy.This Sample, by the way that somewhat hysteresis supplies microwave after supply gas（μ ripples）Energy, the situation of damage can not be being caused to substrate S Lower carry out film forming.The t at the time of supply of gas and the supply of microwave energy reach stable0T at the time of afterwards1, make SiN layer 101a is layered on organic EL element 50.Now, SiN layer 101a thickness is 30nm~100nm or so.
In the case of the above-mentioned various gases of sustainable supply and microwave energy, in moment t1Between~moment t2, from high frequency Power supply 135 applies the RF power of biasing（RF is biased）.Thus, by the ion in plasma to SiN layer 101a attract and Bombardment by ions is applied to SiN layer 101a, so that SiN layer 101b is in the stacked direction different from SiN layer 101a stacked direction It is upper to grow up and the caused pin hole in SiN layer 101a is grown up in non-linear shape.Now, SiN layer 101b thickness is 10nm ~50nm or so.
So, the application and stopping for the RF power being biased by periodically repeating, can be formed by SiN layer The sealant for the multilayer film that 101a and SiN layer 101b are alternately laminated.
Hereby it is possible to change the access path of material in the interface of SiN layer 101a and SiN layer 101b each layer, therefore Sealing effectiveness can be improved, the sealant 101 immersed so as to be formed moisture to be less susceptible to.In addition, by film forming mistake Intermittent entry silane in journey（SiH4）Gas, it can also make lit-par-lit structure.
More than, illustrate the manufacture method of organic assembly, the manufacture device of organic assembly using embodiment and have machine Part, but the present invention is not limited to this above-described embodiment, and various modifications and improvement can be carried out within the scope of the invention.Separately Outside, the present invention can be combined in the range of above-described embodiment and variation do not contradict.
For example, the Etaching device as the present invention, it is not limited to the capacitive coupling plasma shown in Fig. 9（CCP： Capacitively Coupled Plasma）Etaching device, and the plasma that make use of radial line slot antenna can be used Device, inductive type plasma（ICP：Inductively Coupled Plasma）Device, helicon stimulable type etc. from Daughter（HWP：Helicon Wave Plasma）Device, Ecr plasma（ECR：Electron Cyclotron resonance Plasma）Device etc..
In addition, the film formation device as the present invention（Film formation device A~film formation device D）, it is not limited to make use of Figure 10 The CVD device of shown radial line slot antenna, and capacitive coupling plasma can be used（CCP：Capacitively Coupled Plasma）Device, inductive type plasma（ICP：Inductively Coupled Plasma）Device, spiral shell Revolve wave excitation type plasma（HWP：Helicon Wave Plasma）Device, Ecr plasma（ECR： Electron Cyclotron resonance Plasma）Device etc..
Description of reference numerals
1st, the manufacture device of organic assembly；12nd, cleaning device；16th, evaporation coating device；20th, film formation device A；24th, film formation device B；32nd, Etaching device；34th, film formation device D；36th, laminating apparatus；38th, Etaching device；50th, organic EL element；51st, control unit； 52nd, electrode pad portion；100th, control unit；101st, sealant；103rd, intermediate layer；105th, sealant；110th, 120,130,140, every From wall portion.

Claims (7)

  1. A kind of 1. manufacture method of organic assembly, it is characterised in that
    The manufacture method of the organic assembly includes following process：
    Process is inputted, in the input process, inputs the substrate formed with intermediate layer on the 1st sealant, the 1st sealant For the organic layer on one or more isolated walls and anode to be sealed；
    Process is etched back, in the eatch-back process, is etched back to forming the intermediate layer on aforesaid substrate；And
    Film formation process, in the film formation process, the 2nd sealant is formed on above-mentioned intermediate layer,
    Above-mentioned eatch-back process is performed, until the 1st at least one isolated wall in said one or multiple isolated walls is close At least a portion of sealing exposes from above-mentioned intermediate layer, and the top ends of above-mentioned 1st sealant protrude from above-mentioned intermediate layer,
    In above-mentioned film formation process, it is embedded to a part for the top ends of the 1st sealant protruded from above-mentioned intermediate layer above-mentioned Mode in 2nd sealant forms above-mentioned 2nd sealant.
  2. 2. the manufacture method of organic assembly according to claim 1, it is characterised in that
    In above-mentioned input process, the substrate formed with the 1st isolated wall and one or more 2nd isolated walls is inputted, the 1st Isolated wall is adjacent with above-mentioned organic layer, and the isolated wall of one or more the 2nd is located at the outside of the 1st isolated wall and with bag The mode for stating organic layer is placed located between the 1st isolated wall and electrode pad portion.
  3. 3. the manufacture method of organic assembly according to claim 2, it is characterised in that
    The width of said one or multiple 2nd isolated walls forms the width that must be narrower than above-mentioned 1st isolated wall.
  4. 4. the manufacture method of organic assembly according to claim 2, it is characterised in that
    Said one or the tip side of multiple 2nd isolated walls are formed must be thinner than root side.
  5. 5. the manufacture method of organic assembly according to claim 3, it is characterised in that
    Said one or the tip side of multiple 2nd isolated walls are formed must be thinner than root side.
  6. 6. the manufacture method of organic assembly according to any one of claim 1 to 5, it is characterised in that
    In above-mentioned eatch-back process, the above-mentioned intermediate layer being flattened after backflow is etched back.
  7. A kind of 7. manufacture device of organic assembly, it is characterised in that
    The manufacture device of the organic assembly includes：
    1st film formation device, it is used to form the 1st sealant, and the 1st sealant is used for one or more will formed on substrate Organic layer sealing on individual isolated wall and the anode formed on substrate；
    2nd film formation device, it is used to apply intermediate layer on above-mentioned 1st sealant；
    Etaching device, it is used to be etched back above-mentioned intermediate layer；And
    3rd film formation device, it is used to form the 2nd sealant on above-mentioned intermediate layer,
    Above-mentioned Etaching device is etched back to above-mentioned intermediate layer, until in said one or multiple isolated walls it is at least one every At least a portion from the 1st sealant in wall portion exposes from above-mentioned intermediate layer, and the top of above-mentioned 1st sealant exposed End protrudes from above-mentioned intermediate layer,
    Above-mentioned 3rd film formation device is embedded to the above-mentioned 2nd with a part for the top ends of the 1st sealant protruded from above-mentioned intermediate layer Mode in sealant forms above-mentioned 2nd sealant.
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CN1533682A (en) * 2002-01-15 2004-09-29 ������������ʽ���� Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element

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