CN104051554B - Photoelectric detection element and manufacturing method thereof - Google Patents
Photoelectric detection element and manufacturing method thereof Download PDFInfo
- Publication number
- CN104051554B CN104051554B CN201410295138.9A CN201410295138A CN104051554B CN 104051554 B CN104051554 B CN 104051554B CN 201410295138 A CN201410295138 A CN 201410295138A CN 104051554 B CN104051554 B CN 104051554B
- Authority
- CN
- China
- Prior art keywords
- mentioned
- semiconductor layer
- type semiconductor
- band
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 90
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 16
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 16
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 16
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 238000001914 filtration Methods 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 210000000170 cell membrane Anatomy 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 6
- 238000010923 batch production Methods 0.000 abstract description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 description 22
- 239000002184 metal Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 230000003595 spectral effect Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- QVMHUALAQYRRBM-UHFFFAOYSA-N [P].[P] Chemical compound [P].[P] QVMHUALAQYRRBM-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000006578 abscission Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1124—Devices with PN homojunction gate
- H01L31/1125—Devices with PN homojunction gate the device being a CCD device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a photoelectric detection element and a manufacturing method thereof. The photoelectric detection element can receive the wave length in a range from 800nm to 900nm, and contains a band-passing filtering layer which can achieve miniaturization and batch production. The photoelectric detection element is characterized by comprising a first conductivity-type semiconductor layer composed of a first conductivity-type semiconductor material, a second conductivity-type semiconductor layer and a band-passing filtering layer. The second conductivity-type semiconductor layer and the first conductivity-type semiconductor layer form a pn junction, and the second conductivity-type semiconductor layer made of a semiconductor material in a second conductivity-type which is contrary to the first conductivity-type. The band-passing filtering layer reflects wave lengths which are smaller than 800nm or larger than 900nm, and is formed by depositng a TiO2/SiO2 dielectric film on the second conductivity-type semiconductor layer.
Description
Technical field
The present invention relates to the wavelength of particular range can be received, and the band-pass filter containing achievable miniaturization and batch production
Optical detection device of layer and preparation method thereof.
Background technology
Optical detection device is converted into the element of the signal of telecommunication after referring to can detect that optical signal.This photodetection unit
Part typically has opto-electronic conversion Rotating fields, can convert light energy into electric energy between two electrodes.
Above-mentioned optical detection device is widely used in automobile sensor, home-use sensor, uses in various digital camera
Imageing sensor (image sensor) and the field such as solaode (Photovoltaic cell).In addition, in recent years
To develop and to there is to lambda1-wavelength outstanding selectivity light ability and have higher photoelectric current to dark current ratio
Optical detection device.
On the other hand, in order to detect specific wavelength using optical detection device, employ and band-pass filter tunic is coated in
The method on substrate using as window, make to be equivalent in package window part glass,
Qurartz or pmma substrate only detect specific wavelength, but so can be difficult to the miniaturization and not of package
Beneficial to batch production.
Content of the invention
Present invention aim to address the problems referred to above, provide the wavelength that can receive particular range and containing achievable miniaturization
And the optical detection device of band-pass filter layer of batch production and preparation method thereof.
For reaching above-mentioned purpose, the present invention provides a kind of optical detection device, including following part and with it as feature：
The 1st conductive-type semiconductor layer being formed by the semi-conducting material of the 1st conduction type.
Form pn knot with above-mentioned 1st conductive-type semiconductor layer, by the contrary with above-mentioned 1st conduction type the 2nd
The 2nd conductive-type semiconductor layer that the semi-conducting material of conduction type is formed.
For wavelength in addition to particular range wavelength for the reflection, depositing Ti O2/ on above-mentioned 2nd conductive-type semiconductor layer
The band-pass filter layer that SiO2 deielectric-coating is formed.
In addition, preferably possess between above-mentioned 2nd conductive-type semiconductor layer and above-mentioned band-pass filter layer can prevent specific
The anti-reflecting layer that range of wavelength is reflected, above-mentioned anti-reflecting layer can be formed by SiN or SiO2.
And, the present invention provides a kind of manufacture method of optical detection device, comprises with the next stage and with it as feature：
The 1st conductive-type semiconductor layer being formed by the semi-conducting material of the 1st conduction type, conductive the above-mentioned 1st
The 2nd conductivity type that type semiconductor layer will be formed by the semi-conducting material of the 2nd conduction type contrary with the 1st conduction type
Semiconductor layer forms the stage of pn knot.
For reflecting the wavelength in addition to particular range wavelength, in above-mentioned 2nd conductive-type semiconductor layer depositing Ti O2/
SiO2 deielectric-coating forms the stage of band-pass filter layer.
It is further preferred to possess and being formed and can prevent between above-mentioned 2nd conductive-type semiconductor layer and above-mentioned band-pass filter layer
In the stage of the anti-reflecting layer that particular range wavelength is reflected, above-mentioned anti-reflecting layer suggestion is formed by SiN or SiO2.
Invention effect
The optical detection device of the present invention has very high spectral sensitivity to particular range wavelength, and to other light
Spectral sensitivity is 0.1 below A/W, the not only wavelength band of detectable particular range, and because band-pass filter layer is conductive the 2nd
Type semiconductor layer or anti-reflecting layer deposition form, and have the effect of achievable miniaturization and batch production.
Brief description
Fig. 1 is the simple schematic diagram of optical detection device in one embodiment of the invention.
Fig. 2 is the simple schematic diagram of the optical detection device with pin junction structure.
Fig. 3 is the schematic diagram of the optical detection device with anti-reflecting layer.
Fig. 4 is form n- conduction type on the 1st conductive-type semiconductor layer of n+ conduction type intrinsic half
The view of conductor layer.
Fig. 5 is the view forming oxide layer in the 1st conductive-type semiconductor layer.
Fig. 6 is the view of the 2nd conductive-type semiconductor layer being partially formed in intrinsic semiconductor layer.
Fig. 7 is to form the view that annular channel blocks ring.
Fig. 8 is the view forming anti-reflecting layer.
Fig. 9 is the etched view in local of anti-reflecting layer.
Figure 10 is the view that the part locally removed in anti-reflecting layer forms metal electrode.
Figure 11 is the view forming band-pass filter layer.
Figure 12 is the view that is removed of local of band-pass filter layer.
Figure 13 is the view forming metal electrode in the semiconductor layer bottom surface of n++ conduction type.
Figure 14 is the curve chart of the spectral sensitivity characteristic of optical detection device of the present invention.
The spectrum sensitivity of the optical detection device that the band-pass filter layer that Figure 15 is is 2137 nm by thickness is formed is write music
Line chart.
The spectrum sensitivity of the optical detection device that the band-pass filter layer that Figure 16 is is 2811 nm by thickness is formed is write music
Line chart.
The spectrum sensitivity of the optical detection device that the band-pass filter layer that Figure 17 is is 4302 A by thickness is formed is write music
Line chart.
The spectral response curve of the optical detection device that the band-pass filter layer that Figure 18 is is 4 um by thickness is formed
Figure.
Above-mentioned in figure, 110：1st conductive-type semiconductor layer；120：Intrinsic semiconductor layer；130：Oxide layer；140：2nd
Conductive-type semiconductor layer；150：The semiconductor layer of n++ conduction type；160：Channel stopper；170：Anti-reflecting layer；180：Gold
Belong to electrode；190：Band-pass filter layer.
Specific embodiment
Below in conjunction with embodiment, optical detection device of the present invention and preparation method thereof is described in detail, and this
The scope of authority of invention is not limited to following embodiments.
Fig. 1 is the simple schematic diagram of optical detection device in one embodiment of the invention, and Fig. 2 is to have pin knot
The simple schematic diagram of the optical detection device of structure, Fig. 3 is the schematic diagram of the optical detection device with anti-reflecting layer.
The optical detection device of the present invention substantially by the 1st conductive-type semiconductor layer (110) as shown in Fig. 1, the 2nd
Conductive-type semiconductor layer (140) and band-pass filter layer (190) are formed.
Above-mentioned 1st conductive-type semiconductor layer (110) and above-mentioned 2nd conductive-type semiconductor layer (140) can be formed
Pn ties.
Above-mentioned 1st conductive-type semiconductor layer (110) has the 1st conduction type, above-mentioned 2nd conductive-type semiconductor
Layer (140) has the 2nd conduction type.Above-mentioned 1st conductive-type semiconductor layer (110) and above-mentioned 2nd conductivity type half
Conductor layer (140) if composition can form pn and tie, its conduction type is not particularly limited.
As above-mentioned 1st conductive-type semiconductor layer (110) can be made to be formed by n+ conduction type, the above-mentioned 2nd is conductive
Type semiconductor layer is made up of p+ conduction type.
And then, in order to improve answer speed and conversion efficiency also can make above-mentioned 1st conductive-type semiconductor layer (110) with
Above-mentioned 2nd conductive-type semiconductor layer (140) forms pin knot（As Fig. 2）.In above-mentioned 1st conductive-type semiconductor layer
(110) it is provided with the intrinsic semiconductor with n- type conductivity etc. and above-mentioned 2nd conductive-type semiconductor layer (140) between
Layer (120) (intrinsic layer) (120).
Possess by depositing Ti 0 on above-mentioned 2nd conductive-type semiconductor layer (140)2/Si02Deielectric-coating and formed
Band-pass filter layer (190).Above-mentioned band-pass filter layer (190) is to reflect the wavelength beyond particular range wavelength, above-mentioned
2nd conductive-type semiconductor layer (140) alternating deposit Ti02 and Si02 deielectric-coating and formed.
Specifically, as when the automatic optical sensor of automobile, above-mentioned particular range wavelength is then equivalent to 400 ~
700 nm.For the wavelength beyond reflecting 400 ~ 700 nm scopes in above-mentioned band-pass filter layer (190), its thickness need to be
4302 A.
Additionally, when being used for R.G.B color sensor, BLU White balance adjustment, cash inspecting machine etc., on
State particular range wavelength to be made up of arbitrary in 550 ~ 780 nm, 470 nm ~ 625 nm, 400 nm ~ 500 nm.If will
Wavelength beyond above-mentioned band-pass filter layer (190) reflects 550 ~ 780 nm scopes, its thickness is preferably 2978 nm；Will
Wavelength beyond reflection 470 ~ 625 nm, its thickness is preferably 2137 nm；Reflect beyond 400 ~ 500 nm scopes
Wavelength, its thickness is preferably 2811 nm.
In addition, above-mentioned particular range wavelength also can be made up of 800 ~ 900 nm, and above-mentioned band-pass filter layer to be made
(190) wavelength beyond reflection 800 ~ 900 nm scopes, its thickness is preferably 4 m.
And, between the 2nd conductive-type semiconductor layer (140) as above-mentioned in Fig. 3 and above-mentioned band-pass filter layer (190)
It is preferably provided with the anti-reflecting layer (170) that can prevent above-mentioned particular range wavelength from being reflected.Above-mentioned anti-reflecting layer (170) be for
Prevent the light inciding the particular range wavelength of above-mentioned band-pass filter layer (190) from being reflected, it can be by SiN or Si02
Formed.
On the other hand, as above-mentioned anti-reflecting layer (170) is formed by SiN layer, and prevent the ripple of 800 ~ 900 nm scopes
Length is when being reflected, hardly reflex to si withThe light of vertical incidence.Adopt PECVD or LPCVD here
By 1/4 wavelength layer formation of deposits SiN thickness degree of lambda1-wavelength relatively, 950 ~ 1150 A are ideal, 1050 A
For optimum.
Next the manufacture method of the optical detection device to the present invention is illustrated.
As described above, the optical detection device of the present invention ties the groups such as formation stages, band-pass filter layer formation stages by pn
Become.
The above-mentioned formation pn knot stage is to make the 1st conductive-type semiconductor layer and the 2nd conductive-type semiconductor layer form pn
The stage of knot.Above-mentioned pn knot includes pin knot.Above-mentioned 1st conductive-type semiconductor layer and above-mentioned 2nd conductivity type are partly led
The conduction type of body layer is not particularly limited, as long as being formed, pn ties or pin ties.
For example, above-mentioned 1st conductive-type semiconductor layer can be formed by n+ conduction type, and above-mentioned 2nd conductivity type is partly led
Body layer can be formed by p+ conduction type.So, partly lead in above-mentioned 1st conductive-type semiconductor layer and above-mentioned 2nd conductivity type
The intrinsic semiconductor layer (intrinsic layer) with n- conduction type etc. can be formed between body layer.There is n+
Form the intrinsic semiconductor layer with n- conduction type on above-mentioned 1st conductive-type semiconductor layer of conduction type, can be utilized
Epixaxial engineering, the method such as diffusion n+ on n type high resistant substrate.
Illustrate how that the method using spreading n+ on n conduction type high resistant substrate forms pin below in conjunction with the accompanying drawings
Junction structure.
Fig. 4 is form n- conduction type on the 1st conductive-type semiconductor layer of n+ conduction type intrinsic half
The view of conductor layer.
The n+ source such as diffusion phosphorus (phosphorus) first on the high resistant substrate of n- conduction type, defines as figure
1st conductive-type semiconductor layer (110) of the n+ conduction type shown in 4.And the high resistant substrate then phase of n- conduction type
When in intrinsic semiconductor layer (120).
Fig. 5 is the view forming oxide layer (130) in the 1st conductive-type semiconductor layer.
Then in the intrinsic semiconductor layer (120) upper formation oxide layer (130) of n- conduction type.Will be only above-mentioned
The active region of intrinsic semiconductor layer (120) forms pn knot, can form the oxygen such as SiO2 in the part beyond active region
Changing layer (130) prevents p type source to be diffused into this region.Now, in order to prevent p type source to be diffused into the portion beyond active region
Point, the thickness of above-mentioned oxide layer (130) is preferably 6000 more than A.
Fig. 6 is the view of the 2nd conductive-type semiconductor layer being partially formed in intrinsic semiconductor layer.
The mid portion of the above-mentioned oxide layer (130) injecting P type source is etched, injects simultaneously to etching part
Diffusion p type source, has p+ conduction type in being partially formed of above-mentioned intrinsic semiconductor layer (120) as shown in Fig. 6
2nd conductive-type semiconductor layer (140).
Injecting above-mentioned p type source can be using Implant injection boron, formation PBF (Poly Boron Film) thin film
Carry out the methods such as heat treatment after layer, but use Implant method from the angle suggestion being conveniently adjusted junction depth.Preferably expanding
Scattered temperature is more than 1000 °C, and junction depth is that less than 1.5 μm of condition is carried out.And oxide layer (130) can become when spreading
Long.
Fig. 7 is to form the view that annular channel blocks ring (160).
On the one hand preferably form n++ conduction type in the side of above-mentioned intrinsic semiconductor layer (120) active region
Annular channel blocks ring (160).First the side of accordingly above-mentioned intrinsic semiconductor layer (120) active region is etched,
Then phosphorus (phosphorus) etc. is injected as n++ source and makes it expand calculation, thus forming the annular of n++ conduction type
Channel stopper (160).And oxide layer (130) can be grown up when spreading.In addition, partly leading for minimizing above-mentioned 1st conductivity type
Ohm (ohmic) impedance of body layer (110) bottom surface is it is proposed that inject phosphorus (phosphorus) etc. as n++ source, shape
Become the semiconductor layer (150) of high concentration n++ conduction type.
Fig. 8 is the view forming anti-reflecting layer, and Fig. 9 is that the etched state in anti-reflecting layer local is illustrated
Figure.
And before forming above-mentioned band-pass filter layer (the 190 of Figure 11) it is proposed that according to as shown in Fig. 8 in p+
Above-mentioned 2nd conductive-type semiconductor layer (140) of conduction type is upper to form anti-reflecting layer (170).Above-mentioned anti-reflecting layer
(170) purpose is to prevent from being reflected through the incident particular range wavelength of above-mentioned band-pass filter layer (190), thus improve should
Answer speed and conversion efficiency.
Advise that above-mentioned anti-reflecting layer (170) adopts SiN layer or Si02 layer.Above-mentioned anti-reflecting layer (170) can be led to
Cross and adopt PECVD (Plasma Enhanced Chemical Vapor Deposition) or LPCVD (Low
Pressure Chemical Vapor Deposition) in the 2nd conductive-type semiconductor layer (140) upper deposition SiN layer
Or Si02 layer and formed.
On the other hand, in order to form pn junction electrode, removed the above-mentioned 2nd with methods such as wet etchings as shown in Fig. 9
A part (172) for the upper above-mentioned anti-reflecting layer (170) being formed of conductive-type semiconductor layer (140).Now, for preventing
Carry out in wafer (wafer) state, during crystal grain scribing, oxidation fragmentation (oxide chipping) occurs, remove above-mentioned oxygen simultaneously
Change the edge (132) of layer (130).
Figure 10 is the view that the part locally removed in anti-reflecting layer forms metal electrode.
Part deposited metal as Figure 10 is locally removed in above-mentioned anti-reflecting layer (170) forms metal electrode
(180).Meanwhile, to only receive the wavelength of particular range, prevent other wavelength are reflected, preferably cut in above-mentioned raceway groove
Abscission ring (160) region is also with ring (ring) type deposited metal (185).Above-mentioned metal can adopt A1 etc..
Figure 11 is the view forming band-pass filter layer, and Figure 12 is the removed shape in local of band-pass filter layer
State schematic diagram, Figure 13 is the view forming metal electrode in the semiconductor layer bottom surface of n++ conduction type.
Next, the formation stages of above-mentioned band-pass filter layer are to effectively reflect the ripple beyond above-mentioned particular range wavelength
Long, effecting reaction is carried out to above-mentioned particular range wavelength, depositing Ti 02/Si02 deielectric-coating forms band and passes through as shown in Figure 11
The stage of filtering layer (190).
Without forming above-mentioned anti-reflecting layer (170), then can be in above-mentioned 2nd conductive-type semiconductor layer (140) shape
Become above-mentioned band-pass filter layer (190), if defining above-mentioned anti-reflecting layer (170), can be in above-mentioned anti-reflecting layer (170)
Upper formation.
Deposit above-mentioned band-pass filter layer (190) method comprise to carry out E-beam deposition after carried using Ion beam
High density, carry out improving the methods such as density using plasma after E-beam deposition.
In addition, removing the upper shape of above-mentioned metal electrode (180) in above-mentioned band-pass filter layer (190) as shown in Figure 12
The part (192) becoming.In addition, removing the upper formation of ring (ring) shape metal (185) in above-mentioned band-pass filter layer (190)
Part (195).Now, available ICP (Inductively coupled plasma) etc. removes.
As shown in Figure 13, form metal electrode in semiconductor layer (150) bottom surface of above-mentioned n++ conduction type
(200).Metal Au etc. can be used.
On the other hand, just can be made with various forms by the thickness that such method only changes above-mentioned band-pass filter layer
Optical detection device, and spectral sensitivity measurement apparatus measure spectrum sensitivity can be passed through.
The spectrum sensitivity of the optical detection device that the band-pass filter layer that Figure 14 is is 2978 nm by thickness forms is write music
Line chart, as shown in Figure 14, can determine that 550 ~ 780 nm wavelength show EO-1 hyperion sensitivity, and other wavelength show low
Spectral sensitivity.
The spectrum sensitivity of the optical detection device that the band-pass filter layer that Figure 15 is is 2137 nm by thickness is formed is write music
Line chart, as shown in Figure 15, can determine that 470 ~ 625 nm wavelength show EO-1 hyperion sensitivity, and other wavelength show low
Spectral sensitivity.
The spectrum sensitivity of the optical detection device that the band-pass filter layer that Figure 16 is is 2811 nm by thickness is formed is write music
Line chart, as shown in Figure 16, can determine that 400 ~ 500 nm wavelength show EO-1 hyperion sensitivity, and other wavelength show low
Spectral sensitivity.
The spectrum sensitivity of the optical detection device that the band-pass filter layer that Figure 17 is is 4302 A by thickness is formed is write music
Line chart, as shown in Figure 17, can determine that 400 ~ 700 nm wavelength show EO-1 hyperion sensitivity, and other wavelength show low
Spectral sensitivity.
The spectral response curve of the optical detection device that the band-pass filter layer that Figure 18 is is 4 um by thickness is formed
Figure, as shown in Figure 18, can determine that 800 ~ 900 nm wavelength show EO-1 hyperion sensitivity, and other wavelength shows low light
Spectral sensitivity.
Claims (6)
1. a kind of optical detection device is it is characterised in that include being formed by the semi-conducting material of the 1st conduction type the 1st leads
Electric type semiconductor layer,
Form pn knot with above-mentioned 1st conductive-type semiconductor layer, by 2nd conduction contrary with above-mentioned 1st conduction type
The 2nd conductive-type semiconductor layer that the semi-conducting material of type is formed,
For wavelength in addition to particular range wavelength for the reflection, depositing Ti O on above-mentioned 2nd conductive-type semiconductor layer2/SiO2It is situated between
The band-pass filter layer that plasma membrane is formed；
Wherein, above-mentioned particular range wavelength is 550 ~ 780 nm, and above-mentioned band-pass filter thickness degree is 2978 nm；
Or, above-mentioned particular range wavelength is 470 ~ 625 nm, and above-mentioned band-pass filter thickness degree is 2137 nm；
Or, above-mentioned particular range wavelength is 400 ~ 500 nm, and above-mentioned band-pass filter thickness degree is 2811 nm；
Or, above-mentioned particular range wavelength is 400 ~ 700 nm, and above-mentioned band-pass filter thickness degree is 4302 A；
Or, above-mentioned particular range wavelength is 800 ~ 900 nm, and above-mentioned band-pass filter thickness degree is 4 m.
2. the optical detection device according to claim 1 it is characterised in that above-mentioned 2nd conductive-type semiconductor layer with upper
State and between band-pass filter layer, possess the anti-reflecting layer preventing particular range wavelength from being reflected.
3. the optical detection device according to claim 2 is it is characterised in that above-mentioned anti-reflecting layer is by SiN or SiO2
Formed.
4. a kind of manufacture method of optical detection device, it is characterized by be including the semi-conducting material by the 1st conduction type
Formed the 1st conductive-type semiconductor layer with above-mentioned 1st conductive-type semiconductor layer with by contrary with the 1st conduction type
The 2nd conductive-type semiconductor layer that the semi-conducting material of the 2nd conduction type is formed forms the stage of pn knot, for reflection except spy
Determine the wavelength beyond range of wavelength, depositing Ti O on above-mentioned 2nd conductive-type semiconductor layer2/SiO2The band that deielectric-coating is formed
By the stage of filtering layer；
Wherein, above-mentioned particular range wavelength is 550 ~ 780 nm, and above-mentioned band-pass filter thickness degree is 2978 nm；
Or, above-mentioned particular range wavelength is 470 ~ 625 nm, and above-mentioned band-pass filter thickness degree is 2137 nm；
Or, above-mentioned particular range wavelength is 400 ~ 500 nm, and above-mentioned band-pass filter thickness degree is 2811 nm；
Or, above-mentioned particular range wavelength is 400 ~ 700 nm, and above-mentioned band-pass filter thickness degree is 4302 A；
Or, above-mentioned particular range wavelength is 800 ~ 900 nm, and above-mentioned band-pass filter thickness degree is 4 m.
5. the manufacture method of the optical detection device according to claim 4 is it is characterised in that possess：The above-mentioned 2nd
Form the stage of the anti-reflecting layer preventing particular range wavelength from being reflected between conductive-type semiconductor layer and above-mentioned band-pass filter layer.
6. the manufacture method of optical detection device according to claim 5 is it is characterised in that above-mentioned anti-reflecting layer is by SiN
Or SiO2Formed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2013-0080774 | 2013-07-10 | ||
| KR1020130080774A KR101515119B1 (en) | 2013-07-10 | 2013-07-10 | Photodetector and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104051554A CN104051554A (en) | 2014-09-17 |
| CN104051554B true CN104051554B (en) | 2017-02-15 |
Family
ID=51504167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410295138.9A Active CN104051554B (en) | 2013-07-10 | 2014-06-26 | Photoelectric detection element and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101515119B1 (en) |
| CN (1) | CN104051554B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10910415B2 (en) | 2018-12-28 | 2021-02-02 | Industry-Academic Cooperation Foundation, Yonsei University | Three-dimensional photodetector and method of manufacturing the same |
| KR102443215B1 (en) * | 2020-01-02 | 2022-09-14 | 주식회사 피앤엘세미 | Photo diode and surface mount device package including the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1933193A (en) * | 2006-10-09 | 2007-03-21 | 郭辉 | Method for producing 541 nano narrow band-pass photoelectric detector |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001253716A (en) * | 2000-12-20 | 2001-09-18 | Natl Inst Of Advanced Industrial Science & Technology Meti | Ultraviolet ray transparent electroconductive material |
| KR101703311B1 (en) * | 2010-03-08 | 2017-02-13 | 삼성전자주식회사 | InfraRed Sensor, Touch Panel and 3D Color Image Sensor Containing the Same |
| JP5970685B2 (en) * | 2011-08-22 | 2016-08-17 | セイコーエプソン株式会社 | Optical sensor and electronic equipment |
-
2013
- 2013-07-10 KR KR1020130080774A patent/KR101515119B1/en active IP Right Grant
-
2014
- 2014-06-26 CN CN201410295138.9A patent/CN104051554B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1933193A (en) * | 2006-10-09 | 2007-03-21 | 郭辉 | Method for producing 541 nano narrow band-pass photoelectric detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104051554A (en) | 2014-09-17 |
| KR20150007010A (en) | 2015-01-20 |
| KR101515119B1 (en) | 2015-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101714591B (en) | Method for manufacturing silicon photoelectric diode | |
| US20120012967A1 (en) | Black silicon based metal-semiconductor-metal photodetector | |
| EP2684210A1 (en) | Efficient black silicon photovoltaic devices with enhanced blue response | |
| CN106571405B (en) | A kind of ultraviolet detector with GaN nano wire array and preparation method thereof | |
| CN101199060A (en) | Solar cell element and solar cell element manufacturing method | |
| WO2021249344A1 (en) | Photoelectric detector and preparation method therefor | |
| CN105428992B (en) | A kind of high-speed laser chip structure and preparation method thereof | |
| WO2022126933A1 (en) | Preparation method for photoelectric detector implementing wavelength selective response | |
| JP2013125964A (en) | Photovoltaic device and manufacturing method of the same | |
| CN104051554B (en) | Photoelectric detection element and manufacturing method thereof | |
| CN108630782B (en) | Preparation method of wide detection waveband dual-plasma working photoelectric detector | |
| Xu et al. | Surface engineering in SnO2/Si for high-performance broadband photodetectors | |
| JP5073121B2 (en) | Substrate for photoelectric conversion device and manufacturing method thereof, thin film photoelectric conversion device and manufacturing method thereof, and solar cell module | |
| Yue et al. | Antireflection properties and solar cell application of silicon nanostructures | |
| CN105185845A (en) | Si-PIN photodetector introducing micro-structure silicon in P layer and N layer and preparation method thereof | |
| CN106684198A (en) | Sub-wavelength grating based resonance enhanced ultraviolet light detector and preparation method thereof | |
| KR101658534B1 (en) | Solar cell and method for fabricaitng the same | |
| TWI483410B (en) | Solar cell, method of manufacturing the same and module comprising the same | |
| JP2011091131A (en) | Method of manufacturing crystal silicon based solar cell | |
| CN110476256B (en) | Solar cell, solar cell module, and method for manufacturing solar cell | |
| CN110047950A (en) | A kind of solar cell and preparation method thereof with passivation layer structure | |
| CN100499181C (en) | Te-In-Hg photoelectronic detector | |
| TW200950109A (en) | UV inspector for zinc oxide nano-pillar | |
| FR3037721B1 (en) | PROCESS FOR PRODUCING A PHOTOVOLTAIC CELL WITH HETEROJUNCTION AND PHOTOVOLTAIC CELL THUS OBTAINED | |
| CN1933193A (en) | Method for producing 541 nano narrow band-pass photoelectric detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |