CN104051553A - 高吸收率太阳能薄膜 - Google Patents
高吸收率太阳能薄膜 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 36
- 238000002474 experimental method Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 102100027708 Astrotactin-1 Human genes 0.000 description 1
- 229910002475 Cu2ZnSnS4 Inorganic materials 0.000 description 1
- 101000936741 Homo sapiens Astrotactin-1 Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ZWNQSJPQMSUVSE-UHFFFAOYSA-N [Cu].[Sn].[In] Chemical compound [Cu].[Sn].[In] ZWNQSJPQMSUVSE-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
一种高吸收率太阳能薄膜,包括薄膜衬底和高吸收率太阳能薄膜的多层膜(100),所述的高吸收率太阳能薄膜包括四种膜层:AlN膜层、Si膜层、HfO2膜层和SiO2膜层共34层。实验表明,本发明高吸收率太阳能薄膜在正入射条件下实现了可见光波段吸收率大于94%,红外波段的发射率小于10%,该薄膜在太阳能电池系统中具有重要的实用前景。
Description
技术领域
本发明涉及太阳能,特别是一种高吸收率太阳能薄膜。
背景技术
太阳能作为清洁能源已经从军事领域、航天领域进入工业、商业、农业、通信、家用电器以及公用设施等领域。根据所用的材料,太阳能电池可分为:硅太阳能电池、多元化合物薄膜太阳能电池、聚合物多层修饰电极型太阳能电池、纳米晶太阳能电池、有机太阳能电池、塑料太阳能电池。通常情况下,太阳能电池包括导电层、缓冲层、吸收层、导电层及减反射层等组成。硅基太阳能包括单晶(参见CN103227238A,CN20355965A,CN202977492U,CN103107233A,CN103000718A)、多晶(参见CN103383970A,CN202977431A)及非晶(参见CN202651133U,CN203026541U,CN102983204A)材料,多元化合物薄膜包含碲化镉(参见CN201503863U,CN103681932A),Cu2ZnSnS4(CN103715282A),铜铟锡层(参见CN203503667U,CN103531663A),CZTSSe(参见CN103403851A)等,提高吸收层的吸收效率则可以提高太阳能电池的效率。
发明内容
本发明要解决的技术问题提供一种高吸收率太阳能薄膜,该太阳能薄膜可见光波段吸收率大于94%,红外波段的发射率小于10%。
本发明是通过以下技术方案来实现的:
一种高吸收率太阳能薄膜,其特点在于包括薄膜衬底和高吸收率太阳能薄膜的多层膜,所述的高吸收率太阳能薄膜的多层膜包括四种膜层:AlN膜层、Si膜层、HfO2膜层和SiO2膜层共34层,在所述的薄膜衬底上依次的膜系结构为:
膜层 | 材料 | 厚度(nm) | 膜层 | 材料 | 厚度(nm) |
1 | AlN | 1638.9 | 21 | AlN | 59.2 |
2 | Si | 1239.9 | 22 | Si | 1561.8 |
3 | AlN | 146.8 | 23 | AlN | 21.7 |
4 | Si | 153.5 | 24 | Si | 1557.2 |
5 | AlN | 237.1 | 25 | AlN | 50.1 |
6 | Si | 125.9 | 26 | Si | 745.4 |
7 | AlN | 167.8 | 27 | AlN | 371.4 |
8 | Si | 101.1 | 28 | Si | 11532.5 |
9 | AlN | 92.8 | 29 | HfO2 | 14.4 |
10 | Si | 121.7 | 30 | Si | 16.3 |
11 | AlN | 166.4 | 31 | AlN | 32.1 |
12 | Si | 141.5 | 32 | Si | 4.5 |
13 | AlN | 228.4 | 33 | HfO2 | 45.0 |
14 | Si | 152.7 | 34 | SiO2 | 85.0 |
15 | AlN | 149.0 | 35 | ||
16 | Si | 906.6 | 36 | ||
17 | AlN | 82.9 | 37 | ||
18 | Si | 203.5 | 38 | ||
19 | AlN | 89.8 | 39 | ||
20 | Si | 562.2 | 40 |
太阳光的吸收率和红外区域发射率可以分别表示为,
其中,ASTM173(σ)和BB450C(σ)分别为归一化的太阳吸收光谱和450℃归一化的黑体辐射谱。依据上述公式,可以计算出太阳能薄膜对于太阳光的吸收率及红外区域发射率。
本发明中高吸收太阳能薄膜采用AlN、Si、HfO2和SiO2四种薄膜材料,可以实现可见光区域高吸收及红外区域的低发射,对太阳光的吸收率为94%,红外发射率低于10%。
附图说明
图1为本发明高吸收率太阳能薄膜的结构示意图。
图中:
100为高吸收率太阳能薄膜的多层膜,200为基片;1-AlN膜层,2-Si膜层,3-HfO2膜层,4-SiO2膜层。
具体实施方式
下面结合附图及实施例对本发明做进一步的说明。
如图1所示,本发明高吸收率太阳能薄膜,包括薄膜衬底200、高吸收率太阳能薄膜的多层膜100,所述的高吸收率太阳能薄膜的多层膜100包括四种膜层材料,AlN膜层-3、Si膜层-2,HfO2膜层-3和SiO2膜层-4。所述的薄膜衬底基片为薄膜太阳能电池领域通用材料。在所述的薄膜衬底200上依次的膜系结构为:
膜层 | 材料 | 厚度(nm) | 膜层 | 材料 | 厚度(nm) |
1 | AlN | 1638.9 | 21 | AlN | 59.2 |
2 | Si | 1239.9 | 22 | Si | 1561.8 |
3 | AlN | 146.8 | 23 | AlN | 21.7 |
4 | Si | 153.5 | 24 | Si | 1557.2 |
5 | AlN | 237.1 | 25 | AlN | 50.1 |
6 | Si | 125.9 | 26 | Si | 745.4 |
7 | AlN | 167.8 | 27 | AlN | 371.4 |
8 | Si | 101.1 | 28 | Si | 11532.5 |
9 | AlN | 92.8 | 29 | HfO2 | 14.4 |
10 | Si | 121.7 | 30 | Si | 16.3 |
11 | AlN | 166.4 | 31 | AlN | 32.1 |
12 | Si | 141.5 | 32 | Si | 4.5 |
13 | AlN | 228.4 | 33 | HfO2 | 45.0 |
14 | Si | 152.7 | 34 | SiO2 | 85.0 |
15 | AlN | 149.0 | 35 | ||
16 | Si | 906.6 | 36 | ||
17 | AlN | 82.9 | 37 | ||
18 | Si | 203.5 | 38 | ||
19 | AlN | 89.8 | 39 | ||
20 | Si | 562.2 | 40 |
所述的高吸收率太阳能薄膜通过以下方法制备;
高吸收率太阳能薄膜的多层膜100通过物理气相沉积方法镀制在薄膜衬底200上,镀膜采用通用技术,具体工艺不受限制,可以在本发明范围内进行调整。优选的方法包括磁控溅射及离子束溅射等薄膜沉积方式。
实验表明,本发明提出的高吸收率太阳能薄膜设计方法是切实有效可行的,在正入射条件下实现了可见光波段吸收率大于94%,红外波段的发射率小于10%,该薄膜在太阳能电池系统中具有重要的实用前景。
Claims (1)
1.一种高吸收率太阳能薄膜,其特征在于包括薄膜衬底(200)和高吸收率太阳能薄膜的多层膜(100),所述的高吸收率太阳能薄膜的多层膜(100)包括四种膜层:AlN膜层(3)、Si膜层(2)、HfO2膜层(3)和SiO2膜层(4)共34层,在所述的薄膜衬底(200)上依次的膜系结构为:
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Cited By (1)
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CN111158069A (zh) * | 2019-12-26 | 2020-05-15 | 中国人民解放军国防科技大学 | 一种光谱选择性辐射红外隐身材料及其制备方法 |
Citations (4)
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US6515308B1 (en) * | 2001-12-21 | 2003-02-04 | Xerox Corporation | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection |
US20070013998A1 (en) * | 2005-07-12 | 2007-01-18 | Kuohua Wu | IR absorbing reflector |
CN102689467A (zh) * | 2012-05-23 | 2012-09-26 | 北京天瑞星光热技术有限公司 | 一种具有Si3N4和AlN双陶瓷结构高温太阳能选择性吸收涂层及其制备方法 |
CN103325864A (zh) * | 2013-06-21 | 2013-09-25 | 中国科学院上海技术物理研究所 | 基于重掺杂半导体红外波段近完全吸收的膜系结构 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6515308B1 (en) * | 2001-12-21 | 2003-02-04 | Xerox Corporation | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection |
US20070013998A1 (en) * | 2005-07-12 | 2007-01-18 | Kuohua Wu | IR absorbing reflector |
CN102689467A (zh) * | 2012-05-23 | 2012-09-26 | 北京天瑞星光热技术有限公司 | 一种具有Si3N4和AlN双陶瓷结构高温太阳能选择性吸收涂层及其制备方法 |
CN103325864A (zh) * | 2013-06-21 | 2013-09-25 | 中国科学院上海技术物理研究所 | 基于重掺杂半导体红外波段近完全吸收的膜系结构 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111158069A (zh) * | 2019-12-26 | 2020-05-15 | 中国人民解放军国防科技大学 | 一种光谱选择性辐射红外隐身材料及其制备方法 |
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