CN104049823A - High-strength projection-type capacitive screen and manufacturing method thereof - Google Patents
High-strength projection-type capacitive screen and manufacturing method thereof Download PDFInfo
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- CN104049823A CN104049823A CN201410291189.4A CN201410291189A CN104049823A CN 104049823 A CN104049823 A CN 104049823A CN 201410291189 A CN201410291189 A CN 201410291189A CN 104049823 A CN104049823 A CN 104049823A
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Abstract
The invention discloses a high-strength projection-type capacitive screen and a manufacturing method of the capacitive screen. The high-strength projection-type capacitive screen comprises a first glass substrate, a first ITO layer, a second glass substrate and a second ITO layer, wherein the first ITO layer is arranged on the first glass substrate, and the second ITO layer is arranged on the second glass substrate. The first ITO layer is connected with the second ITO layer through a lamination layer. The first glass substrate is a tempered glass substrate. The first ITO layer includes an X-axis electrode layer formed by a plurality of electrodes in the X-axis direction. The second ITO layer includes a Y-axis electrode layer formed by a plurality of electrodes in the Y-axis direction. The edge of the X-axis electrode layer is further provided with a metal wire X connected with the X-axis electrode layer. The edge of the Y-axis electrode layer is further provided with a metal wire Y connected with the Y-axis electrode layer. The metal wire X and the metal wire Y are respectively connected with a flexible circuit board. The lamination layer is an EVA glue layer or a PVB glue layer. The projection-type capacitive screen is high in impact strength; in addition, bridging process is omitted from the manufacturing method, and therefore the product yield can be effectively increased.
Description
Technical field
The present invention relates to capacitance plate field, relate in particular to a kind of high-intensity projecting type capacitor screen and preparation method thereof.
Background technology
Projecting type capacitor screen is the screen that adopts projected capacitive touch technology, thereby the variation that touch panel can then detect this position electric capacity in finger touches calculates finger place, carries out multi-point touch operation.Projecting type capacitor screen is widely used in our daily life every field, as mobile phone, panel computer, media player, navigational system, digital camera, electrical equipment control, Medical Devices etc.
Projected capacitive touch screen is in two-layer ITO electro-conductive glass coating, to etch different ITO conducting wire modules.In two modules, etched figure is mutually vertical, they can be regarded as to X and Y-direction continually varying draw runner.Because X, Y framework are at different surfaces, its intersection forms a capacitive node.A draw runner can be treated as drive wire, and it is detection lines that another one draw runner is treated as.When electric current passes through a wire in drive wire, if the extraneous signal that has capacitance variations will cause the variation of capacitive node on another layer conductor so.The variation of detecting capacitance can measure by the electronic loop being attached thereto, then via A/D controller, transfers digital signal to and by computing machine, do calculation process and obtain (X, Y) shaft position, and then reaches the order ground of location.
Projecting type capacitor screen of the prior art mainly contains following several structure: (1) GG pattern; Wherein first G is cover glass; second G is SENSOR sensor; it is two-sided ito glass; the Y-axis electrode pattern that the pattern of the X-axis electrode layer that directions X electrode is formed and Y-direction electrode form is accomplished respectively two faces of two-sided ito glass; and use metal wire that directions X electrode and Y-direction electrode are drawn; this GG structure adopts double glazing, and structure is comparatively thick and heavy.(2) GFF pattern; Wherein G is cover glass, and F is ITO film, for respectively X-axis electrode pattern and Y-axis electrode pattern being accomplished respectively to two ITO films, re-uses OCA laminating; In GFF pattern making process, need to use OCA laminating three times, the bad and yield of its light transmission is difficult to control.(3) GF2 pattern; Wherein G is cover glass, and F is two-sided ITO film, respectively X-axis electrode pattern and Y-axis electrode pattern is accomplished to the tow sides of F, fits, and use metal wire that directions X electrode and Y-direction electrode are drawn by OCA; In its manufacturing process, need, at the two-sided metal wire being connected with Y-axis electrode pattern with X-axis electrode pattern of making respectively of ITO film, make difficulty and be difficult to control yield, and its shadow effect that disappears be bad.(4) OGS pattern; on one deck cover glass, directly form the technology of ITO conducting film and sensor; being about to X-axis electrode pattern and Y-axis electrode pattern is all produced on cover glass; in its process, need X-axis electrode and Y-axis electrode to put up a bridge; and make respectively the metallic circuit being connected with Y-axis electrode pattern with X-axis electrode pattern, make difficulty and be difficult to control yield.
In prior art easily there is fragmentation in the cover glass of projecting type capacitor screen, cannot be applicable to need high strength field, as for catering to the market demand, need to make the fields such as capacitance plate of shatter-resistant.
Summary of the invention
The technical problem to be solved in the present invention is, for the defect of prior art, provides a kind of high-intensity projecting type capacitor screen and preparation method thereof.
The technical solution adopted for the present invention to solve the technical problems is: a kind of high-intensity projecting type capacitor screen, comprise the first glass substrate, be arranged at an ITO layer, the second glass substrate on described the first glass substrate, be arranged at the 2nd ITO layer on described the second glass substrate, between a described TIO layer and described the 2nd ITO layer, use high-intensity pressing layer to be connected; Described the first glass substrate is reinforced glass substrate; A described ITO layer comprises the X-axis electrode layer being formed by some X-direction electrodes, and described the 2nd ITO layer comprises the Y-axis electrode layer being formed by some Y direction electrodes; Described high-intensity projecting type capacitor screen also comprises the X metal wire being connected with described X-axis electrode layer that is arranged at described X-axis electrode layer edge and the Y metal wire being connected with described Y-axis electrode layer that is arranged at described Y-axis electrode layer edge, and described X metal wire is connected with flexible circuit board respectively with described Y metal wire; Described pressing layer is EVA glue-line or PVB glue-line.
Preferably, between described the first glass substrate and an ITO layer, between described the second glass substrate and the 2nd ITO layer, be equipped with for eliminating the shadow layer that disappears of optical index.
Preferably, the edge of described the first glass substrate is provided with muffle painting frame layer.
The present invention also provides a kind of method for making of high-intensity projecting type capacitor screen, comprises the following steps:
S1, the first glass substrate is carried out to tempering processing, to form reinforced glass substrate;
S2, on reinforced glass substrate, make an ITO layer, a described ITO layer comprises the X-axis electrode layer being formed by some X-direction electrodes; And at described X-axis electrode layer edge, make the X metal wire being connected with described X-axis electrode layer, X metal wire is tied in flexible circuit board;
S3: make the 2nd ITO layer on the second glass substrate, described the 2nd ITO layer comprises the Y-axis electrode layer being formed by some Y direction electrodes; And at described Y-axis electrode layer edge, make the Y metal wire being connected with described Y-axis electrode layer, Y metal wire is tied in flexible circuit board;
S4: place pressing glue being provided with the second glass substrate of an ITO layer and being provided with between the reinforced glass substrate of an ITO layer, pressing is to form pressing layer.
Preferably, described step S1 comprises: adopt physics or chemical method to carry out tempering processing to the first glass substrate, to form reinforced glass substrate;
Described employing physical method carries out tempering processing to the first glass substrate, comprise: by described the first glass substrate be placed in heating furnace, be heated to approach the softening temperature of the first glass substrate softening after, adopt bull nozzle to two top blast cold high pressure air of the first glass substrate, make it evenly be cooled to rapidly room temperature, obtain reinforced glass substrate;
Described employing chemical method is carried out tempering processing to the first glass substrate, comprising: adopt high temperature modification ion exchange process or low form ion exchange process to process the first glass substrate.
Preferably, before step S1, also comprise step S0: employing silk-screen mode to the edge of described the first glass substrate, makes muffle painting frame layer by low-temperature glaze silk-screen; And on described the first glass substrate and described the second glass substrate, make for eliminating the shadow layer that disappears of optical index.
Preferably, described step S2 comprises:
S21: under vacuum condition, adopt sputter mode to plate indium tin oxide layer on described reinforced glass substrate;
S22: under vacuum condition, adopt sputter mode being coated with a metal cladding of indium tin oxide layer, described metal level is arranged on described muffle painting frame layer; On described metal level, adopt film mulching method to be covered with dry film, use the pattern of light shield exposure X metal wire; Use developer that described X metal wire is developed, and metal level described in the decoating liquid strip that do not react with dry film of use, make described X metal wire;
S23: be covered with dry film on the reinforced glass substrate that makes described X metal wire, use light shield exposure to be formed the pattern of X-axis electrode layer by some X-direction electrodes; Described X metal wire is connected with described X-axis electrode layer;
S24: use developer by the pattern development of X-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer;
S25: adopt and go black liquid that dry film is removed, clean and be dried, to make X-axis electrode layer;
S26: described X metal wire is tied in flexible circuit board;
Or described step S2 comprises:
S21: under vacuum condition, adopt sputter mode to plate indium tin oxide layer on described reinforced glass substrate;
S22: have in sputter on the described reinforced glass substrate of indium tin oxide layer and be covered with dry film, use the pattern of the X-axis electrode layer that light shield exposure forms by X-direction electrode;
S23: use developer by the pattern development of X-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer;
S24: adopt and go black liquid that dry film is removed, clean and be dried, to make X-axis electrode layer;
S25: adopt silk-screen mode silk-screen X metal wire on described muffle painting frame layer, and toast 50～70min at 140～160 ℃ of temperature, to make described X metal wire, X metal wire is tied in flexible circuit board.
Preferably, described step S3 comprises:
S31: under vacuum condition, adopt sputter mode to plate indium tin oxide layer on described the second glass substrate;
S32: under vacuum condition, adopt sputter mode being coated with a metal cladding of indium tin oxide layer, described metal level is arranged on described the second glass substrate; On described metal level, adopt film mulching method to be covered with dry film, use the pattern of light shield exposure Y metal wire; Use developer that described Y metal wire is developed, and metal level described in the decoating liquid strip that do not react with dry film of use, make described Y metal wire;
S33: be covered with dry film making on the second glass substrate of described Y metal wire, use light shield exposure to be formed the pattern of Y-axis electrode layer by some Y direction electrodes; Described Y metal wire is connected with described Y electrode layer;
S34: use developer by the pattern development of Y-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer;
S35: adopt and go black liquid that dry film is removed, clean and be dried, to make X-axis electrode layer;
S36: described Y metal wire is tied in flexible circuit board
Or described step S3 comprises:
S31: under vacuum condition, adopt sputter mode to plate indium tin oxide layer on described the second glass substrate;
S32: have in sputter on described second glass substrate of indium tin oxide layer and be covered with dry film, use the pattern of the Y-axis electrode layer that light shield exposure forms by Y direction electrode;
S33: use developer by the pattern development of Y-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer;
S34: adopt and go black liquid that dry film is removed, clean and be dried, to make Y-axis electrode layer;
S35: adopt silk-screen mode silk-screen Y metal wire at the edge of described the second glass substrate, and toast 50～70min at 140～160 ℃ of temperature, to make described Y metal wire, and described Y metal wire is tied in flexible circuit board.
Preferably, described step S4 comprises:
S41: cut EVA glue, EVA glue is placed between a described ITO layer and described the 2nd ITO layer, and vacuum pumping opening is fixed and reserved to reinforced glass substrate and the second glass substrate periphery;
S42: the semi-manufacture after fixing are put into laminated rubber machine, use vacuum suction device to be pumped to vacuum state from described reserved vacuum pumping opening, being incubated 15～60min after being warming up to 55～65 ℃ carries out precompressed; After being incubated 40～130min after being warming up to again 120～130 ℃, take out, complete stitching operation, form pressing layer.
Preferably, described step S4 comprises:
S41: cut PVB glue, PVB glue is placed between a described ITO layer and described the 2nd ITO layer, and vacuum pumping opening is fixed and reserved to reinforced glass substrate and the second glass substrate periphery;
S42: immobilized semi-manufacture are put into autoclave, and using vacuum suction device to be pumped to pressure from described reserved vacuum pumping opening is under 8～12 atmospheric pressure, is incubated 20～30min after being warming up to 65～80 ℃ and carries out precompressed; After being incubated 45～60min after being warming up to again 130～140 ℃, take out, complete stitching operation, form pressing layer.
The present invention compared with prior art tool has the following advantages: implement the present invention, the first glass substrate is reinforced glass substrate, and between an ITO layer and the 2nd ITO layer, adopts high-intensity pressing layer to connect, and can effectively improve the compressive strength of projecting type capacitor screen.And the one isolated by pressing layer between ITO layer and the 2nd ITO layer, can effectively avoid the X-axis electrode layer on an ITO layer directly to contact with the Y-axis electrode layer on the 2nd ITO layer, in the technique of avoiding putting up a bridge when saving technique, make mistakes and cause product fraction defective to improve.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the structural representation of high-intensity projecting type capacitor screen in one embodiment of the invention.
Fig. 2 is the process flow diagram of the method for making of high-intensity projecting type capacitor screen in one embodiment of the invention.
Fig. 3 is the process flow diagram of the method for making of high-intensity projecting type capacitor screen in the embodiment of the present invention 1.
Fig. 4 is the process flow diagram of the method for making of high-intensity projecting type capacitor screen in the embodiment of the present invention 2.
In figure: 1, the first glass substrate; 2, an ITO layer; 3, the second glass substrate; 4, the 2nd ITO layer; 5, X metal wire; 6, Y metal wire; 7, pressing layer; 8, muffle painting frame layer; 9, the shadow layer that disappears.
Embodiment
For technical characterictic of the present invention, object and effect being had more clearly, understand, now contrast accompanying drawing and describe the specific embodiment of the present invention in detail.
Fig. 1 illustrates the high-intensity projecting type capacitor screen in one embodiment of the invention.This high-intensity projecting type capacitor screen comprises the first glass substrate 1, be arranged at an ITO layer 2, the second glass substrate 3 on the first glass substrate 1, be arranged between the 2nd ITO layer 4, the one ITO layer 2 on the second glass substrate 3 and the 2nd ITO layer 4 and use high-intensity pressing layer 7 to be connected.Particularly, the first glass substrate 1 is reinforced glass substrate, for improving the compressive strength of projecting type capacitor screen, and when reinforced glass substrate is broken, can avoid coming off without fragment, thereby improve the security of using.Particularly, an ITO layer 2 comprises the X-axis electrode layer being formed by some X-direction electrodes, and the 2nd ITO layer 4 comprises the Y-axis electrode layer being formed by some Y direction electrodes; On X-axis electrode layer edge, be provided with the X metal wire 5 being connected with X-axis electrode layer, on Y-axis electrode layer edge, be provided with the Y metal wire 6 being connected with Y-axis electrode layer; X metal wire 5 is connected with flexible circuit board respectively with Y metal wire 6.
Particularly, pressing layer 7 is EVA glue-line or PVB (polyvinyl butyral) glue-line.The features such as EVA glue-line adopts EVA resin (being ethylene-vinyl acetate copolymer) to obtain after pressing is processed, and has the transparency good, and impact flexibility is strong.PVB glue-line is to adopt PVB resin (being polyvinyl butyral) to obtain after pressing is processed, and the laminated glass that adopts PVB resin to make has the advantages such as the transparency is good, impact strength is large.
More specifically, the edge of the first glass substrate 1 is provided with muffle painting frame layer 8.Muffle painting frame layer 8 adopts various colored muffle paintings to be made, and can be the color muffle paintings such as Chinese red, blueness, white, black, makes the border color of projecting type capacitor screen more gorgeous.And arranging of muffle painting frame layer 8 can be blocked X metal wire 5 and Y metal wire 6.
Between the second glass substrate 3 and the 2nd ITO layer 4, be equipped with for eliminating the shadow layer 9 that disappears of optical index further, between the first glass substrate 1 and an ITO layer 2.The setting of shadow layer 9 of disappearing can make the aberration between the first glass substrate 1 and an ITO layer 2, the second glass substrate 3 and the 2nd ITO layer 4 reduce, and to improve the transmittance of projecting type capacitor screen, reaches again the shadow effect that disappears.Particularly, the shadow layer 9 that disappears comprises and is successively superimposed upon niobium pentaoxide layer and the silicon dioxide layer on the first glass substrate 1; Or be successively superimposed upon silicon oxynitride layer and the silicon dioxide layer on the first glass substrate 1.
Embodiment 1
As shown in Figure 2 and Figure 3, the present invention also provides a kind of method for making of high-intensity projecting type capacitor screen, comprises the following steps:
S1-0: employing screen printer to the edge of the first glass substrate 1, makes muffle painting frame layer 8 by low-temperature glaze silk-screen; And on the first glass substrate 1 and the second glass substrate 3, make for eliminating the shadow layer 9 that disappears of optical index.Wherein, low-temperature glaze is that serviceability temperature is the glaze of 400～700 ℃, by low-temperature glaze silk-screen on the first glass substrate 1 time, need at 400～700 ℃ of temperature, roast, make glaze after baking there is stronger covering and put forth effort.More specifically, by low-temperature glaze silk-screen, the edge to the first glass substrate 1 specifically comprises the following steps: base plate, hanger plate, development, dry, colour-separation drafting, printing, dry, finished product; Wherein, hanger plate comprise network selection, select frame, the net that stretches tight, dry, coating or attach muffle painting, high-temperature baking.
Particularly, on the first glass substrate 1 and the second glass substrate 3, make for eliminating the shadow layer 9 that disappears of optical index and comprise the following steps: to the first glass substrate 1 with the second glass substrate 3 cleans and heat oven dry is dry; Under vacuum condition, in the one side employing sputter mode of the first glass substrate 1 and the second glass substrate 3, plate niobium pentaoxide or silicon oxynitride; Under vacuum condition, in the one side that is coated with niobium pentaoxide or silicon oxynitride, adopt sputter mode applying silicon oxide, to complete the making of the shadow layer 9 that disappears.
S1-1, employing physical method carry out tempering processing to the first glass substrate 1, to form reinforced glass substrate.
Step S1-1 specifically comprises: by the first glass substrate 1 be placed in heating furnace, be heated to approach the softening temperature of the first glass substrate 1 softening after (if the software temperature of simple glass is 600 ℃, will be heated to 580～590 ℃), adopt bull nozzle to two top blast cold high pressure air of the first glass substrate 1, make it evenly be cooled to room temperature rapidly and obtain reinforced glass substrate, this reinforced glass substrate is in inner tension, the stress state of outside pressurized, once local, occur damaged, can there is stress relief, the first glass substrate 1 is fractured into the countless fritters that there is no corner angle, be difficult for hurting sb.'s feelings.
S1-2, on reinforced glass substrate, make ITO layer 2, a one ITO layer 2 and comprise the X-axis electrode layer being formed by some X-direction electrodes; And at X-axis electrode layer edge, make the X metal wire 5 being connected with X-axis electrode layer, X metal wire 5 is tied in flexible circuit board.
Particularly, step S1-2 comprises:
S1-21: under vacuum condition, adopt sputter mode to plate indium tin oxide layer on reinforced glass substrate.
S1-22: under vacuum condition, adopt sputter mode being coated with a metal cladding of indium tin oxide layer, metal level is arranged on muffle painting frame layer 8.Understandably, metal level can be aluminium, molybdenum aluminium molybdenum, copper and cupronickel.On metal level, adopt laminating machine to be covered with dry film, use the pattern of light shield exposure X metal wire 5.Understandably, need metal level to carry out cleaning, drying before being covered with dry film on to metal level, not strong to avoid covering of dry film to put forth effort, and also after cleaning, its surface cleaning is clean, outward appearance is comparatively good.Use developer that X metal wire 5 is developed, and use the decoating liquid strip metal level not reacting with dry film, make X metal wire 5.Particularly, adopt sodium carbonate or the sal tartari (being developer) of spray or immersion 2～4% to develop; And strip metal level is when temperature is 40～60 ℃, by the metal decoating liquid not reacting with the dry film spray of special use, on metal level, understandably, this metal decoating liquid is the acid solution not reacting with indium tin oxide layer with metal level.
S1-23: adopt laminating machine to be covered with dry film on the reinforced glass substrate that makes X metal wire 5, use light shield exposure to be formed the pattern of X-axis electrode layer by some X-direction electrodes; X metal wire 5 is connected with X-axis electrode layer, to realize between X metal wire 5 and X-axis electrode layer, is electrically connected to.
S1-24: use developer by the pattern development of X-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer, form X-axis electrode layer.Particularly, pattern development can adopt ultraviolet ray surperficial at dry film by the default film or light shield vertical irradiation, makes the dry film of illuminated part that the process reflecting occur.Etching solution is that concentration is that the proportioning of 16～21mol/L is HCl:HNO
3: H
2the solution of O=15～19:15～19:18～22, preferably, HCl:HNO
3: H
2the proportioning of O is 17:17:20.Understandably, the concentration of etching solution can be adjusted with the resistance of an ITO layer 2, and ITO layer 2 resistance are higher, and its concentration is higher.Particularly, etching solution reacts as follows with oxidation cigarette tin layer: In
2o
3+ 6HCl=2InCl
3+ 3H
2o;
2SnO
2+8HCl＝2SnCl
4+4H
2O；In
2O
3+6HNO
3＝2In(NO
3)
3+3H
2O；
2SnO
2+8HNO
3＝2SN(NO
3)
4+4H
2O。
S1-25: adopt and go black liquid that dry film is removed, clean and be dried, to make X-axis electrode layer.Particularly, go black liquid can be concentration 1%-3% as KOH, the solution such as NaOH, to remove residual dry film.
S1-26: X metal wire is tied in flexible circuit board.
S1-3: make the 2nd ITO layer 4, the two ITO layer 4 and comprise the Y-axis electrode layer being formed by some Y direction electrodes on the second glass substrate 3; And at Y-axis electrode layer edge, make the Y metal wire 6 being connected with Y-axis electrode layer, Y metal wire 6 is tied in flexible circuit board.
Particularly, step S1-3 comprises:
S1-31: under vacuum condition, adopt sputter mode to plate indium tin oxide layer on the second glass substrate 3.
S1-32: under vacuum condition, adopt sputter mode being coated with a metal cladding of indium tin oxide layer, metal level is arranged on the second glass substrate 3.Understandably, metal level can be aluminium, molybdenum aluminium molybdenum, copper and cupronickel.On metal level, adopt laminating machine to be covered with dry film, use the pattern of light shield exposure Y metal wire 6.Understandably, need metal level to carry out cleaning, drying before being covered with dry film on to metal level, not strong to avoid covering of dry film to put forth effort, and also after cleaning, its surface cleaning is clean, outward appearance is comparatively good.Use developer that Y metal wire 6 is developed, and use the decoating liquid strip metal level not reacting with dry film, make Y metal wire 6.Particularly, adopt sodium carbonate or the sal tartari (being developer) of spray or immersion 2～4% to develop; And strip metal level is when temperature is 40～60 ℃, by the metal decoating liquid not reacting with the dry film spray of special use, on metal level, understandably, this metal decoating liquid is the acid solution not reacting with indium tin oxide layer with metal level.
S1-33: adopt laminating machine to be covered with dry film making on the second glass substrate 3 of Y metal wire 6, use light shield exposure to be formed the pattern of Y-axis electrode layer by some Y direction electrodes; Y metal wire 6 is connected with Y electrode layer, to realize between Y metal wire 6 and Y-axis electrode layer, is electrically connected to.
S1-34: use developer by the pattern development of Y-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer, form Y-axis electrode layer.Particularly, pattern development can adopt ultraviolet ray surperficial at dry film by the default film or light shield vertical irradiation, makes the dry film of illuminated part that the process reflecting occur.Etching solution is that concentration is that the proportioning of 16～21mol/L is HCl:HNO
3: H
2the solution of O=15～19:15～19:18～22, preferably, HCl:HNO
3: H
2the proportioning of O is 17:17:20.Understandably, the concentration of etching solution can be adjusted with the resistance of the 2nd ITO layer 4, and the 2nd ITO layer 4 resistance are higher, and its concentration is higher.Particularly, etching solution reacts as follows with oxidation cigarette tin layer: In
2o
3+ 6HCl=2InCl
3+ 3H
2o;
2SnO
2+8HCl＝2SnCl
4+4H
2O；In
2O
3+6HNO
3＝2In(NO
3)
3+3H
2O；
2SnO
2+8HNO
3＝2SN(NO
3)
4+4H
2O。
S1-35: adopt and go black liquid that dry film is removed, clean and be dried, to make Y-axis electrode layer.Particularly, go black liquid can be concentration 1%-3% as KOH, the solution such as NaOH, to remove residual dry film.
S1-36: Y metal wire is tied in flexible circuit board.
S1-4: place pressing glue being provided with the second glass substrate 3 of an ITO layer 2 and being provided with between the reinforced glass substrate of an ITO layer 2, pressing is to form pressing layer 7.Particularly, pressing glue can adopt has the EVA glue that the transparency is good, impact flexibility is strong, and its pressing process comprises:
S1-41: cut EVA glue, EVA glue is placed between an ITO layer 2 and the 2nd ITO layer 4, and vacuum pumping opening is fixed and reserved to reinforced glass substrate and the second glass substrate 3 peripheries.Understandably, in the reserved vacuum pumping opening of periphery of reinforced glass substrate and the second glass substrate 3, so that the air between glass and glass can be extracted into vacuum state completely when vacuum suction.
S1-42: the semi-manufacture after fixing are put into laminated rubber machine, use vacuum suction device to be pumped to vacuum state from described reserved vacuum pumping opening, being incubated 15～60min after being warming up to 55～65 ℃ carries out precompressed; After being incubated 40～130min after being warming up to again 120～130 ℃, take out, complete stitching operation, form pressing layer 7.
Adopt EVA glue laminated to close and form pressing layer 7, have advantages of simple to operate, cost is low, can mainly apply single finished product production run.
Embodiment 2
As shown in Figure 2, Figure 4 shows, the present invention also provides a kind of method for making of high-intensity projecting type capacitor screen, comprises the following steps:
S2-0: employing screen printer to the edge of the first glass substrate 1, makes muffle painting frame layer 8 by low-temperature glaze silk-screen; And on the first glass substrate 1 and the second glass substrate 3, make for eliminating the shadow layer 9 that disappears of optical index.Understandably, step S2-0 is consistent with the method for making of step S1-0 in embodiment 1.
S2-1: adopt chemical method to carry out tempering processing to the first glass substrate 1, to form reinforced glass substrate.Particularly, step S2-1 comprises: adopt high temperature modification ion exchange process or low form ion exchange process to process the first glass substrate 1.
Particularly, high temperature modification ion exchange process is at the temperature of softening point of glass that is more than or equal to the first glass substrate 1, will contain Na
2o or K
2the first glass substrate 1 of O is placed in the lithium salts of molten condition, and the sodion on the first glass substrate 1 top layer or potassium ion and lithium ion are exchanged, and forms lithium ion exchanged layer, is cooled to room temperature and can obtains reinforced glass substrate.Because the expansion system of lithium ion is less than the expansion coefficient of potassium ion, sodion, at cooling procedure ectomesoderm, shrink and compared with little and internal layer, to shrink greatlyr, after being cooled to normal temperature, glass is equally in internal layer tension, the state of outer pressurized, its effect is similar to physical toughened.Understandably, the lithium ion in the present embodiment can also be less than by other expansion systems the substitution of potassium ion, sodion.
Low form ion exchange process is in the alkali salt liquation in the temperature province of transfer point of glass that is less than the first glass substrate 1, by the less ion of the first glass substrate 1 top layer radius and the larger ion-exchange of the radius in alkali salt liquation, as the lithium ion in glass and the potassium in solution or sodion exchange, sodion in glass and the exchange of the potassium ion in solution, utilize the difference on basic ion volume to form embedded squeezing compressive stress at surface layer of glass.
Understandably, adopt high temperature modification ion exchange process and low form ion exchange process to carry out tempering processing to the first glass substrate 1, the principal ingredient that depends on the first glass substrate 1, if the principal ingredient of the first glass substrate 1 is containing potassium, sodion, adopts high temperature modification ion exchange process; If the principal ingredient in the first glass substrate 1, containing lithium ion, adopts low-temperature ion exchange process.
S2-2: make ITO layer 2, a one ITO layer 2 and comprise the X-axis electrode layer being formed by some X-direction electrodes on reinforced glass substrate; And at X-axis electrode layer edge, make the X metal wire 5 being connected with X-axis electrode layer, X metal wire 5 is tied in flexible circuit board.Particularly, step S2-2 comprises:
S2-21: under vacuum condition, adopt sputter mode to plate indium tin oxide layer on reinforced glass substrate.
S2-22: have in sputter on the reinforced glass substrate of indium tin oxide layer and be covered with dry film, use the pattern of the X-axis electrode layer that light shield exposure forms by X-direction electrode.
S2-23: use developer by the pattern development of X-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer.Particularly, pattern development can adopt ultraviolet ray surperficial at dry film by the default film or light shield vertical irradiation, makes the dry film of illuminated part that the process reflecting occur.Etching solution is that concentration is that the proportioning of 16～21mol/L is HCl:HNO
3: H
2the solution of O=15～19:15～19:18～22, preferably, HCl:HNO
3: H
2the proportioning of O is 17:17:20.Understandably, the concentration of etching solution can be adjusted with the resistance of an ITO layer 2, and ITO layer 2 resistance are higher, and its concentration is higher.Particularly, etching solution reacts as follows with oxidation cigarette tin layer: In
2o
3+ 6HCl=2InCl
3+ 3H
2o;
2SnO
2+8HCl＝2SnCl
4+4H
2O；In
2O
3+6HNO
3＝2In(NO
3)
3+3H
2O；
2SnO
2+8HNO
3＝2SN(NO
3)
4+4H
2O。
S2-24: adopt and go black liquid that dry film is removed, clean and be dried, to make X-axis electrode layer.Particularly, go black liquid can be concentration 1%-3% as KOH, the solution such as NaOH, so that residual dry film is removed, to make X-axis electrode layer.
S2-25: adopt screen printer silk-screen X metal wire 5 on muffle painting frame layer 8, and toast 50～70min at 140～160 ℃ of temperature, to make X metal wire 5, X metal wire 5 is tied in flexible circuit board.Understandably, X metal wire 5 can adopt elargol line.
S2-3: make the 2nd ITO layer 4, the two ITO layer 4 and comprise the Y-axis electrode layer being formed by some Y direction electrodes on the second glass substrate 3; And at Y-axis electrode layer edge, make the Y metal wire 6 being connected with Y-axis electrode layer, Y metal wire 6 is tied in flexible circuit board.Particularly, step S2-3 comprises:
S2-31: under vacuum condition, adopt sputter mode to plate indium tin oxide layer on described the second glass substrate 3.
S2-32: have in sputter on described second glass substrate 3 of indium tin oxide layer and be covered with dry film, use the pattern of the Y-axis electrode layer that light shield exposure forms by Y direction electrode.
S2-33: use developer by the pattern development of Y-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer.Particularly, pattern development can adopt ultraviolet ray surperficial at dry film by the default film or light shield vertical irradiation, makes the dry film of illuminated part that the process reflecting occur.Etching solution is that concentration is that the proportioning of 16～21mol/L is HCl:HNO
3: H
2the solution of O=15～19:15～19:18～22, preferably, HCl:HNO
3: H
2the proportioning of O is 17:17:20.Understandably, the concentration of etching solution can be adjusted with the resistance of an ITO layer 2, and ITO layer 2 resistance are higher, and its concentration is higher.Particularly, etching solution reacts as follows with oxidation cigarette tin layer: In
2o
3+ 6HCl=2InCl
3+ 3H
2o;
2SnO
2+8HCl＝2SnCl
4+4H
2O；In
2O
3+6HNO
3＝2In(NO
3)
3+3H
2O；
2SnO
2+8HNO
3＝2SN(NO
3)
4+4H
2O。
S2-34: adopt and go black liquid that dry film is removed, clean and be dried, to make Y-axis electrode layer.Particularly, go black liquid can be concentration 1%-3% as KOH, the solution such as NaOH, so that residual dry film is removed, to make Y-axis electrode layer.
S2-35: adopt screen printer silk-screen Y metal wire 6 at the edge of the second glass substrate 3, and toast 50～70min at 140～160 ℃ of temperature, to make Y metal wire 6, and Y metal wire 6 is tied in flexible circuit board.Understandably, Y metal wire 6 can adopt elargol line.
S2-4: place pressing glue being provided with the second glass substrate 3 of an ITO layer 2 and being provided with between the reinforced glass substrate of an ITO layer 2, pressing is to form pressing layer 7.Particularly, pressing glue can also adopt has the PVB glue that the transparency is good, impact strength is large, and its pressing process comprises:
S2-41: cut PVB glue, PVB glue is placed between an ITO layer 2 and the 2nd ITO layer 4, and vacuum pumping opening is fixed and reserved to reinforced glass substrate and the second glass substrate 3 peripheries, so that the air between glass and glass can be extracted into vacuum state completely when vacuum suction.
S2-42: immobilized semi-manufacture are put into autoclave, and using vacuum suction device to be pumped to pressure from described reserved vacuum pumping opening is 8～12 atmospheric pressure, is incubated 20～30min after being warming up to 65～80 ℃ and carries out precompressed; After being incubated 45～60min after being warming up to again 130～140 ℃, take out, complete stitching operation, form pressing layer 7.
The transparency and shock resistance hardness that employing PVB glue laminated is closed formation pressing layer 7 are strong compared with EVA, mainly apply bulk article production run.
To sum up, in the method for making of the capacitance plate of high-intensity projection-type provided by the present invention, the first glass substrate 1 tempering is processed and formed reinforced glass substrate, and between an ITO layer 2 and the 2nd ITO layer 4, adopt high-intensity pressing layer 7 (being EVA film layers or PVB film layers) to connect, can effectively improve the compressive strength of projecting type capacitor screen.And the one isolated by pressing layer 7 between ITO layer 2 and the 2nd ITO layer 4, can effectively avoid the X-axis electrode layer on an ITO layer 2 directly to contact with the Y-axis electrode layer on the 2nd ITO layer 4, in the technique of avoiding putting up a bridge when saving bridging technique, make mistakes and cause product fraction defective to improve.
The present invention describes by several specific embodiments, it will be appreciated by those skilled in the art that, without departing from the present invention, can also carry out various conversion and be equal to alternative the present invention.In addition, for particular condition or concrete condition, can make various modifications to the present invention, and not depart from the scope of the present invention.Therefore, the present invention is not limited to disclosed specific embodiment, and should comprise the whole embodiments that fall within the scope of the claims in the present invention.
Claims (10)
1. a high-intensity projecting type capacitor shields, it is characterized in that: comprise the first glass substrate (1), be arranged at an ITO layer (2), the second glass substrate (3) on described the first glass substrate (1), be arranged at the 2nd ITO layer (4) on described the second glass substrate (3), between a described TIO layer and described the 2nd ITO layer (4), use high-intensity pressing layer (7) to be connected; Described the first glass substrate (1) is reinforced glass substrate; A described ITO layer (2) comprises the X-axis electrode layer being formed by some X-direction electrodes, and described the 2nd ITO layer (4) comprises the Y-axis electrode layer being formed by some Y direction electrodes; Described high-intensity projecting type capacitor screen also comprises the X metal wire (5) being connected with described X-axis electrode layer that is arranged at described X-axis electrode layer edge and the Y metal wire (6) being connected with described Y-axis electrode layer that is arranged at described Y-axis electrode layer edge, and described X metal wire (5) is connected with flexible circuit board respectively with described Y metal wire (6); Described pressing layer (7) is EVA glue-line or PVB glue-line.
2. high-intensity projecting type capacitor screen according to claim 1, is characterized in that: between described the first glass substrate (1) and an ITO layer (2), be equipped with for eliminating the shadow layer (9) that disappears of optical index between described the second glass substrate (3) and the 2nd ITO layer (4).
3. high-intensity projecting type capacitor screen according to claim 1, is characterized in that: the edge of described the first glass substrate (1) is provided with muffle painting frame layer (8).
4. the method for making that described in claim 1～3 any one, high-intensity projecting type capacitor shields, is characterized in that: comprise the following steps:
S1, the first glass substrate (1) is carried out to tempering processing, to form reinforced glass substrate;
S2, on reinforced glass substrate, make an ITO layer (2), a described ITO layer (2) comprises the X-axis electrode layer being formed by some X-direction electrodes; And at described X-axis electrode layer edge, make the X metal wire (5) being connected with described X-axis electrode layer, X metal wire (5) is tied in flexible circuit board;
S3: at upper the 2nd ITO layer (4) of making of the second glass substrate (3), described the 2nd ITO layer (4) comprises the Y-axis electrode layer being formed by some Y direction electrodes; And at described Y-axis electrode layer edge, make the Y metal wire (6) being connected with described Y-axis electrode layer, Y metal wire (6) is tied in flexible circuit board;
S4: place pressing glue being provided with second glass substrate (3) of an ITO layer (2) and being provided with between the reinforced glass substrate of an ITO layer (2), pressing is to form pressing layer (7).
5. the method for making of high-intensity projecting type capacitor screen according to claim 4, is characterized in that: described step S1 comprises: adopt physics or chemical method to carry out tempering processing to the first glass substrate (1), to form reinforced glass substrate;
Described employing physical method carries out tempering processing to the first glass substrate (1), comprise: by described the first glass substrate (1) be placed in heating furnace, be heated to approach the softening temperature of the first glass substrate (1) softening after, adopt bull nozzle to two top blast cold high pressure air of the first glass substrate (1), make it evenly be cooled to rapidly room temperature, obtain reinforced glass substrate;
Described employing chemical method is carried out tempering processing to the first glass substrate (1), comprising: adopt high temperature modification ion exchange process or low form ion exchange process to process the first glass substrate (1).
6. the method for making that high-intensity projecting type capacitor according to claim 4 shields, it is characterized in that: before step S1, also comprise step S0: adopt silk-screen mode that low-temperature glaze silk-screen is arrived on the edge of described the first glass substrate (1), make muffle painting frame layer (8); And at described the first glass substrate (1) and the upper shadow layer (9) that disappears that is used for eliminating optical index of making of described the second glass substrate (3).
7. the method for making that high-intensity projecting type capacitor according to claim 6 shields, is characterized in that: described step S2 comprises:
S21: under vacuum condition, adopt sputter mode to plate indium tin oxide layer on described reinforced glass substrate;
S22: under vacuum condition, adopt sputter mode being coated with a metal cladding of indium tin oxide layer, described metal level is arranged on described muffle painting frame layer (8); On described metal level, adopt film mulching method to be covered with dry film, use the pattern of light shield exposure X metal wire (5); Use developer that described X metal wire (5) is developed, and use metal level described in the decoating liquid strip not reacting with dry film, make described X metal wire (5);
S23: be covered with dry film on the reinforced glass substrate that makes described X metal wire (5), use light shield exposure to be formed the pattern of X-axis electrode layer by some X-direction electrodes; Described X metal wire (5) is connected with described X-axis electrode layer;
S24: use developer by the pattern development of X-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer;
S25: adopt and go black liquid that dry film is removed, clean and be dried, to make X-axis electrode layer;
S26: described X metal wire (5) is tied in flexible circuit board;
Or described step S2 comprises:
S21: under vacuum condition, adopt sputter mode to plate indium tin oxide layer on described reinforced glass substrate;
S22: have in sputter on the described reinforced glass substrate of indium tin oxide layer and be covered with dry film, use the pattern of the X-axis electrode layer that light shield exposure forms by X-direction electrode;
S23: use developer by the pattern development of X-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer;
S24: adopt and go black liquid that dry film is removed, clean and be dried, to make X-axis electrode layer;
S25: at the upper employing of described muffle painting frame layer (8) silk-screen mode silk-screen X metal wire (5), and toast 50～70min at 140～160 ℃ of temperature, to make described X metal wire (5), X metal wire (5) is tied in flexible circuit board.
8. the method for making that high-intensity projecting type capacitor according to claim 6 shields, is characterized in that: described step S3 comprises:
S31: under vacuum condition, adopt sputter mode at the upper plating of described the second glass substrate (3) indium tin oxide layer;
S32: under vacuum condition, adopt sputter mode being coated with a metal cladding of indium tin oxide layer, described metal level is arranged on described the second glass substrate (3); On described metal level, adopt film mulching method to be covered with dry film, use the pattern of light shield exposure Y metal wire (6); Use developer that described Y metal wire (6) is developed, and use metal level described in the decoating liquid strip not reacting with dry film, make described Y metal wire (6);
S33: be covered with dry film making on second glass substrate (3) of described Y metal wire (6), use light shield exposure to be formed the pattern of Y-axis electrode layer by some Y direction electrodes; Described Y metal wire (6) is connected with described Y electrode layer;
S34: use developer by the pattern development of Y-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer;
S35: adopt and go black liquid that dry film is removed, clean and be dried, to make X-axis electrode layer;
S36: and described Y metal wire (6) is tied in flexible circuit board
Or described step S3 comprises:
S31: under vacuum condition, adopt sputter mode at the upper plating of described the second glass substrate (3) indium tin oxide layer;
S32: have in sputter on described second glass substrate (3) of indium tin oxide layer and be covered with dry film, use the pattern of the Y-axis electrode layer that light shield exposure forms by Y direction electrode;
S33: use developer by the pattern development of Y-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer;
S34: adopt and go black liquid that dry film is removed, clean and be dried, to make Y-axis electrode layer;
S35: the edge at described the second glass substrate (3) adopts silk-screen mode silk-screen Y metal wire (6), and toast 50～70min at 140～160 ℃ of temperature, to make described Y metal wire (6), and described Y metal wire (6) is tied in flexible circuit board.
9. the method for making that high-intensity projecting type capacitor according to claim 6 shields, is characterized in that: described step S4 comprises:
S41: cut EVA glue, EVA glue is placed between a described ITO layer (2) and described the 2nd ITO layer (4), and vacuum pumping opening is fixed and reserved to reinforced glass substrate and the second glass substrate (3) periphery;
S42: the semi-manufacture after fixing are put into laminated rubber machine, use vacuum suction device to be pumped to vacuum state from described reserved vacuum pumping opening, being incubated 15～60min after being warming up to 55～65 ℃ carries out precompressed; After being incubated 40～130min after being warming up to again 120～130 ℃, take out, complete stitching operation, form pressing layer (7).
10. the method for making that high-intensity projecting type capacitor according to claim 6 shields, is characterized in that: described step S4 comprises:
S41: cut PVB glue, PVB glue is placed between a described ITO layer (2) and described the 2nd ITO layer (4), and vacuum pumping opening is fixed and reserved to reinforced glass substrate and the second glass substrate (3) periphery;
S42: immobilized semi-manufacture are put into autoclave, and using vacuum suction device to be pumped to pressure from described reserved vacuum pumping opening is under 8～12 atmospheric pressure, is incubated 20～30min after being warming up to 65～80 ℃ and carries out precompressed; After being incubated 45～60min after being warming up to again 130～140 ℃, take out, complete stitching operation, form pressing layer (7).
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