CN203930777U - A kind of projecting type capacitor screen without putting up a bridge - Google Patents
A kind of projecting type capacitor screen without putting up a bridge Download PDFInfo
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- CN203930777U CN203930777U CN201420346038.XU CN201420346038U CN203930777U CN 203930777 U CN203930777 U CN 203930777U CN 201420346038 U CN201420346038 U CN 201420346038U CN 203930777 U CN203930777 U CN 203930777U
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- 239000003990 capacitor Substances 0.000 title claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 239000002184 metal Substances 0.000 claims abstract description 84
- 239000011521 glass Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 193
- 239000011241 protective layer Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 abstract description 35
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000005530 etching Methods 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 14
- 239000007788 liquid Substances 0.000 description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 238000010030 laminating Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000006059 cover glass Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910000570 Cupronickel Inorganic materials 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- ZXTFQUMXDQLMBY-UHFFFAOYSA-N alumane;molybdenum Chemical compound [AlH3].[Mo] ZXTFQUMXDQLMBY-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 235000019504 cigarettes Nutrition 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000000976 ink Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
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- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a kind of projecting type capacitor screen without putting up a bridge.Should comprise glass substrate without the projecting type capacitor screen of putting up a bridge, be arranged at first of glass substrate disappear shadow layer, be arranged at first disappear shadow layer an ITO layer, be arranged at disappear shadow layer and be arranged at the second the 2nd ITO layer that disappears shadow layer top of second of an ITO layer top; The one ITO layer comprises the X-axis electrode layer being formed by some X-direction electrodes, and the 2nd ITO layer comprises the Y-axis electrode layer being formed by some Y direction electrodes; Also comprise the X metal wire that is arranged at X-axis electrode layer edge and the Y metal wire that is arranged at Y-axis electrode layer edge without the projecting type capacitor screen of putting up a bridge, X metal wire is connected with flexible circuit board respectively with Y metal wire.Should be frivolous without projecting type capacitor screen structure of putting up a bridge, the shadow that disappears is respond well, and in its manufacturing process without bridging technique, be conducive to save manufacture craft.
Description
Technical field
The utility model relates to capacitance plate field, relates in particular to a kind of projecting type capacitor screen without putting up a bridge.
Background technology
Projecting type capacitor screen is the screen that adopts projected capacitive touch technology, thereby touch panel can then detect that the variation of this position electric capacity calculates finger place, carries out multi-point touch operation in finger touches.Projecting type capacitor screen is widely used in our daily life every field, as mobile phone, panel computer, media player, navigational system, digital camera, electrical equipment control, Medical Devices etc.
Projected capacitive touch screen is in two-layer ITO electro-conductive glass coating, to etch different ITO conducting wire modules.In two modules, etched figure is mutually vertical, they can be regarded as to X and Y-direction continually varying draw runner.Because X, Y framework are at different surfaces, its intersection forms a capacitive node.A draw runner can be treated as drive wire, and it is detection lines that another one draw runner is treated as.In the time that electric current passes through a wire in drive wire, if the extraneous signal that has capacitance variations will cause the variation of capacitive node on another layer conductor so.The variation of detecting capacitance can measure by the electronic loop being attached thereto, then transfers digital signal to via A/D controller and do calculation process by computing machine and obtain (X, Y) shaft position, and then reaches the order ground of location.
Projecting type capacitor screen of the prior art mainly contains following several structure: (1) GG pattern; Wherein first G is cover glass; second G is SENSOR sensor; it is two-sided ito glass; the Y-axis electrode pattern that the pattern of the X-axis electrode layer that directions X electrode is formed and Y-direction electrode form is accomplished respectively two faces of two-sided ito glass; and use metal wire that directions X electrode and Y-direction electrode are drawn; this GG structure adopts double glazing, and structure is comparatively thick and heavy.(2) GFF pattern; Wherein G is cover glass, and F is ITO film, for respectively X-axis electrode pattern and Y-axis electrode pattern being accomplished respectively to two ITO films, re-uses OCA laminating; In GFF pattern making process, need to use OCA laminating three times, the bad and yield of its light transmission is difficult to control.(3) GF2 pattern; Wherein G is cover glass, and F is two-sided ITO film, respectively X-axis electrode pattern and Y-axis electrode pattern is accomplished to the tow sides of F, fits, and use metal wire that directions X electrode and Y-direction electrode are drawn by OCA; In its manufacturing process, need, at the two-sided metal wire being connected with Y-axis electrode pattern with X-axis electrode pattern of making respectively of ITO film, make difficulty and be difficult to control yield, and its shadow effect that disappears be bad.(4) OGS pattern; on one deck cover glass, directly form the technology of ITO conducting film and sensor; all be produced on cover glass by X-axis electrode pattern and Y-axis electrode pattern; in its process, need X-axis electrode and Y-axis electrode to put up a bridge; and make respectively the metallic circuit being connected with Y-axis electrode pattern with X-axis electrode pattern, make difficulty and be difficult to control yield.
Utility model content
The technical problems to be solved in the utility model is, for the defect of prior art, provides shielding without the projecting type capacitor of putting up a bridge that structure is frivolous, the shadow that disappears is effective.
The utility model solves the technical scheme that its technical matters adopts: a kind of projecting type capacitor screen without putting up a bridge, comprise glass substrate, be arranged at first of described glass substrate disappear shadow layer, be arranged at described first disappear shadow layer an ITO layer, be arranged at disappear shadow layer and be arranged at the described second the 2nd ITO layer that disappears shadow layer top of second of a described ITO layer top; A described ITO layer comprises the X-axis electrode layer being formed by some X-direction electrodes, and described the 2nd ITO layer comprises the Y-axis electrode layer being formed by some Y direction electrodes; The described projecting type capacitor without putting up a bridge shields and also comprises the X metal wire that is arranged at described X-axis electrode layer edge and the Y metal wire that is arranged at described Y-axis electrode layer edge, and described X metal wire is connected with flexible circuit board respectively with described Y metal wire.
Preferably, the edge of described glass substrate is provided with frame protective layer.
The utility model compared with prior art tool has the following advantages: implement the utility model, adopt second to disappear shadow layer by an ITO layer and the isolation of the 2nd ITO layer, avoid the X-axis electrode layer on an ITO layer directly to contact with the Y-axis electrode layer on the 2nd ITO layer, in the technique of avoiding putting up a bridge in saving bridging technique, make mistakes and cause product fraction defective to improve.This projecting type capacitor screen is provided with first shadow layer and the second shadow layer that disappears that disappears, and makes the pattern of the X-direction electrode of the X-axis electrode layer on the ITO layer shadow better effects if that disappears, and ensures its optical transmission, improves production quality.And this projecting type capacitor screen structure is comparatively frivolous.
Brief description of the drawings
Below in conjunction with drawings and Examples, the utility model is described in further detail, in accompanying drawing:
Fig. 1 is the structural representation without the projecting type capacitor screen of putting up a bridge in the utility model one embodiment.
Fig. 2 is a process flow diagram of the method for making that in the utility model embodiment 1, the projecting type capacitor without bridging shields.
Fig. 3 is another process flow diagram of the method for making that in the utility model embodiment 1, the projecting type capacitor without bridging shields.
Fig. 4 is a process flow diagram of the method for making that in the utility model embodiment 2, the projecting type capacitor without bridging shields.
Fig. 5 is another process flow diagram of the method for making that in the utility model embodiment 2, the projecting type capacitor without bridging shields.
In figure: 1, glass substrate; 2, the first shadow layer that disappears; 3, an ITO layer; 4, the second shadow layer that disappears; 5, the 2nd ITO layer; 6, frame protective layer; 7, X metal wire; 8, Y metal wire.
Embodiment
Understand for technical characterictic of the present utility model, object and effect being had more clearly, now contrast accompanying drawing and describe embodiment of the present utility model in detail.
Fig. 1 illustrates in the utility model one embodiment without the projecting type capacitor screen of putting up a bridge.Should comprise glass substrate 1 without projecting type capacitor screen of putting up a bridge, be arranged at first of glass substrate 1 disappear shadow layer 2, be arranged at first disappear shadow layer 2 an ITO layer 3, be arranged at disappear shadow layer 4 and be arranged at the second the 2nd ITO layer 5 that disappears shadow layer 4 top of second of ITO layer 3 top.Adopt the second shadow layer 4 that disappears that an ITO layer 3 and the 2nd ITO layer 5 are isolated, avoid the X-axis electrode layer on an ITO layer 3 directly to contact with the Y-axis electrode layer on the 2nd ITO layer 5, in the technique of avoiding putting up a bridge in saving bridging technique, make mistakes and cause product fraction defective to improve.This projecting type capacitor screen is provided with first shadow the layer 2 and second shadow layer 4 that disappears that disappears, and makes the pattern of the X-direction electrode of the X-axis electrode layer on an ITO layer 3 shadow better effects if that disappears, and ensures its optical transmission, improves production quality.And this projecting type capacitor screen structure is comparatively frivolous.
The one ITO layer 3 comprises the X-axis electrode layer being formed by some X-direction electrodes, and the 2nd ITO layer 5 comprises the Y-axis electrode layer being formed by some Y direction electrodes; Also comprise the X metal wire 7 that is arranged at X-axis electrode layer edge and the Y metal wire 8 that is arranged at Y-axis electrode layer edge without the projecting type capacitor screen of putting up a bridge, X metal wire 7 is connected with flexible circuit board respectively with Y metal wire 8.
Understandably, first shadow the layer 2 and second shadow layer 4 that disappears that disappears is respectively used to reduce optical index between glass substrate 1 and an ITO layer 3, an ITO layer 3 and the 2nd ITO layer 5, reduces its aberration, to improve the transmittance of projecting type capacitor rate.Particularly, the first shadow layer 2 that disappears comprises and is successively superimposed upon niobium pentaoxide layer or silicon oxynitride and the silicon dioxide layer on glass substrate 1; The second shadow layer 4 that disappears can comprise and be successively superimposed upon niobium pentaoxide layer or silicon oxynitride and the silicon dioxide layer on an ITO layer 3, and the second shadow layer 4 that disappears can also comprise the silicon dioxide layer being arranged on an ITO layer 3.
Particularly, an ITO layer 3 comprises the X-axis electrode layer being formed by some X-direction electrodes, and the 2nd ITO layer 5 comprises the Y-axis electrode layer being formed by some Y direction electrodes; On X-axis electrode layer edge, be provided with the X metal wire 7 being connected with X-axis electrode layer, on Y-axis electrode layer edge, be provided with the Y metal wire 8 being connected with Y-axis electrode layer; X metal wire 7 is connected with flexible circuit board respectively with Y metal wire 8.
On the edge of glass substrate 1, be also provided with the frame protective layer 6 for blocking X metal wire 7 and Y metal wire 8.Understandably, frame protective layer 6 adopts insulating material to be made.
Embodiment 1
As shown in Figure 2 and Figure 3, in the present embodiment, provide a kind of method for making of the projecting type capacitor screen without putting up a bridge, comprise the following steps:
S1-0: adopt silk screen printing process or gold-tinted technique to make frame protective layer 6 on the edge of glass substrate 1.Particularly, the thickness of frame protective layer 6 is below 7u, more Bao Yuehao.
Particularly, adopt silk screen printing process to make the concrete steps of frame protective layer 6: on glass substrate 1, to make base plate, hanger plate, development, dry, colour-separation drafting, printing, dry, finished product; Wherein hanger plate comprise network selection, select frame, the net that stretches tight, dry, coating or attach photoresists, drying and other steps.
Before adopting gold-tinted technique to make the concrete steps of frame protective layer 6: PR, clean (adopting the process that adopts DI water or KOH that the dirt on glass substrate 1 is removed in the polish-brush hydro-peening of physical method or chemical method), PR coating or attaching photoresist, post bake (will scribble glass baking a period of time of photoresist at a certain temperature, make the solvent evaporates of photoresist, form the process of the PR layer of solid), UV exposure (adopts ultraviolet ray to pass through default film vertical irradiation on photoresist surface, the process that the photoresist of illuminated part is reacted), adopting sodium carbonate or solution of potassium carbonate to develop (adopts weak KOH solution to go from glass substrate 1 surface, the photoresist of footpath irradiation part to be removed, retain the not photoresist of illuminated portion), PR solidifies (pyroprocessing make photoresist firmer), adopt acid etching (adopting suitable acid solution that the ITO layer covering without photoresist is removed), adopt alkali to go China ink to carry out demoulding (adopting stronger KOH stripper solution that residual photoresist is removed), DI cleans and then is made into frame protective layer 6.Understandably, the PR coating in the present embodiment or attaching photoresist, post bake two steps also can adopt laminating machine to be covered with this operation of dry film and substitute, to simplify production technology.
S1-1: make on coloured glaze substrate for eliminating first of optical index between glass substrate 1 and an ITO layer 3 shadow layer 2 that disappears.
Particularly, step S1-1 comprises:
S1-11: glass substrate 1 is cleaned to also heat and dry dry.
S1-12: at vacuum condition, adopt sputter mode to plate niobium pentaoxide in the one side of glass substrate 1.
S1-13: under vacuum condition, adopt sputter mode applying silicon oxide in the one side that is being coated with niobium pentaoxide, to complete the first making that disappears shadow layer 2.
S1-2: disappear and make ITO layer 3, a one ITO layer 3 on shadow layer 2 and comprise the X-axis electrode layer being formed by some X-direction electrodes first; And the X metal wire 7 being connected with X-axis electrode layer in the making at X-axis electrode layer edge.
Particularly, step S1-2 comprises:
S1-21: under vacuum condition, adopt sputter mode to disappear on shadow layer 2 and plate indium tin oxide layer first.
S1-22: under vacuum condition, adopt sputter mode being coated with a metal cladding of indium tin oxide layer, metal level is arranged on frame protective layer 6.Understandably, metal level can be aluminium, molybdenum aluminium molybdenum, copper and cupronickel.On metal level, adopt laminating machine to be covered with dry film, use the pattern of light shield exposure X metal wire 7.Understandably, need metal level to carry out cleaning, drying before being covered with dry film on to metal level, not strong to avoid covering of dry film to put forth effort, and also after cleaning, its surface cleaning is clean, outward appearance is comparatively good.Use developer that the X metal wire 7 of exposure is developed, and use the decoating liquid strip metal level not reacting with dry film, make X metal wire 7.Particularly, adopt sodium carbonate or the sal tartari (being developer) of spray or immersion 2～4% to develop; And strip metal level is in the time that temperature is 40～60 DEG C, the special metal decoating liquid not reacting with dry film is sprayed on metal level, understandably, this metal decoating liquid is the acid solution not reacting with indium tin oxide layer with metal level.
S1-23: adopt laminating machine to be covered with dry film on the glass substrate 1 that makes X metal wire 7, use light shield exposure to be formed the pattern of X-axis electrode layer by some X-direction electrodes; X metal wire 7 is connected with X-axis electrode layer, is electrically connected to realize between X metal wire 7 and X-axis electrode layer.
S1-24: use developer by the pattern development of X-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer.Particularly, pattern development can adopt ultraviolet ray by the default film or light shield vertical irradiation on dry film surface, make the dry film of illuminated part that the process of reflection occur.Etching solution is that concentration is that the proportioning of 16～21mol/L is HCl:HNO
3: H
2the solution of O=15～19:15～19:18～22, preferably, HCl:HNO
3: H
2the proportioning of O is 17:17:20.Understandably, the concentration of etching solution can be adjusted with the resistance of an ITO layer 3, and ITO layer 3 resistance are higher, and its concentration is higher.Particularly, etching solution reacts as follows with oxidation cigarette tin layer: In
2o
3+ 6HCl=2InCl
3+ 3H
2o;
2SnO
2+8HCl＝2SnCl
4+4H
2O；In
2O
3+6HNO
3＝2In(NO
3)
3+3H
2O；
2SnO
2+8HNO
3＝2SN(NO
3)
4+4H
2O。
S1-25: adopt and go black liquid that dry film is removed, clean and be dried, to make X-axis electrode layer.Particularly, go black liquid can be concentration 1%-3% as KOH, the solution such as NaOH, to remove residual dry film.
S1-3: make the second shadow layer 4 that disappears on an ITO layer 3.In the present embodiment, the second shadow layer 4 that disappears comprises and is successively superimposed upon niobium pentaoxide layer and the silicon dioxide layer on an ITO layer 3.
Particularly, step S1-3 comprises:
S1-31: an ITO layer 3 is cleaned to also heat and dry dry;
S1-32: at vacuum condition, adopt sputter mode to plate niobium pentaoxide in the one side of an ITO layer 3;
S1-33: under vacuum condition, adopt sputter mode applying silicon oxide in the one side that is being coated with niobium pentaoxide, to complete the second making that disappears shadow layer 4.
S1-4: disappear and make the 2nd ITO layer 5, the two ITO layer 5 on shadow layer 4 and comprise the Y-axis electrode layer being formed by some Y direction electrodes second; And the Y metal wire 8 being connected with Y-axis electrode layer in the making at Y-axis electrode layer edge.
Particularly, step S1-4 comprises:
S1-41: under vacuum condition, adopt sputter mode to disappear on shadow layer 4 and plate indium tin oxide layer second.
S1-42: under vacuum condition, adopt sputter mode being coated with a metal cladding of indium tin oxide layer, metal level is arranged on second and disappears on shadow layer 4.Understandably, metal level can be aluminium, molybdenum aluminium molybdenum, copper and cupronickel.On metal level, adopt laminating machine to be covered with dry film, use the pattern of light shield exposure Y metal wire 8.Understandably, need metal level to carry out cleaning, drying before being covered with dry film on to metal level, not strong to avoid covering of dry film to put forth effort, and also after cleaning, its surface cleaning is clean, outward appearance is comparatively good.Use developer that the Y metal wire 8 of exposure is developed, and use the decoating liquid strip metal level not reacting with dry film, make Y metal wire 8.Particularly, adopt sodium carbonate or the sal tartari (being developer) of spray or immersion 2～4% to develop; And strip metal level is in the time that temperature is 40～60 DEG C, the special metal decoating liquid not reacting with dry film is sprayed on metal level, understandably, this metal decoating liquid is the acid solution not reacting with indium tin oxide layer with metal level.
S1-43: be covered with dry film on the glass substrate 1 that makes Y metal wire 8, use light shield exposure to be formed the pattern of Y-axis electrode layer by some Y direction electrodes; Y metal wire 8 is connected with Y-axis electrode layer, is electrically connected to realize between Y metal wire 8 and Y-axis electrode layer.
S1-44: use developer by the pattern development of Y-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer.Particularly, pattern development can adopt ultraviolet ray by the default film or light shield vertical irradiation on dry film surface, make the dry film of illuminated part that the process of reflection occur.Etching solution is that concentration is that the proportioning of 16～21mol/L is HCl:HNO
3: H
2the solution of O=15～19:15～19:18～22, preferably, HCl:HNO
3: H
2the proportioning of O is 17:17:20.Understandably, the concentration of etching solution can be adjusted with the resistance of the 2nd ITO layer 5, and the 2nd ITO layer 5 resistance are higher, and its concentration is higher.Particularly, etching solution reacts as follows with oxidation cigarette tin layer: In
2o
3+ 6HCl=2InCl
3+ 3H
2o;
2SnO
2+8HCl＝2SnCl
4+4H
2O；In
2O
3+6HNO
3＝2In(NO
3)
3+3H
2O；
2SnO
2+8HNO
3＝2SN(NO
3)
4+4H
2O。
S1-45: adopt and go black liquid that dry film is removed, clean and be dried, to make Y-axis electrode layer.Particularly, go black liquid can be concentration 1%-3% as KOH, the solution such as NaOH, to remove residual dry film.
S1-5: use the etching paste local etching that just X metal wire and flexible circuit board are bound out.
S1-6: X metal wire 7 is tied in flexible circuit board, and Y metal wire 8 is tied in flexible circuit board, to complete the making without the projecting type capacitor screen of putting up a bridge.
Embodiment 2
As shown in Figure 4, Figure 5, the present embodiment provides a kind of method for making of the projecting type capacitor screen without putting up a bridge, and comprises the following steps:
S2-0: adopt silk screen printing process or gold-tinted technique to make frame protective layer 6 on the edge of glass substrate 1.Particularly, its concrete steps are consistent with step S1-0 in embodiment 1.Understandably, the thickness of frame protective layer 6 is below 7u, more Bao Yuehao.
S2-1: make the first shadow layer 2 that disappears on glass substrate 1.
Particularly, step S2-1 comprises:
S2-11: glass substrate 1 is cleaned to also heat and dry dry.
S2-12: at vacuum condition, adopt sputter mode to plate niobium pentaoxide or silicon oxynitride in the one side of glass substrate 1.
S2-13: under vacuum condition, adopt sputter mode applying silicon oxide in the one side that is being coated with niobium pentaoxide or silicon oxynitride, to complete the first making that disappears shadow layer 2.
S2-2: disappear and make ITO layer 3, a one ITO layer 3 on shadow layer 2 and comprise the X-axis electrode layer being formed by some X-direction electrodes first.
Particularly, step S2-2 comprises:
S2-21: under vacuum condition, adopt sputter mode to disappear on shadow layer 2 and plate indium tin oxide layer first.
S2-22: adopt film mulching method to be covered with dry film in the one side that is coated with indium tin oxide layer, use the expose pattern of the X-axis electrode layer being formed by some X-direction electrodes of light shield.
S2-23: use developer by the pattern development of X-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer.Particularly, pattern development can adopt ultraviolet ray by the default film or light shield vertical irradiation on dry film surface, make the dry film of illuminated part that the process of reflection occur.Etching solution is that concentration is that the proportioning of 16～21mol/L is HCl:HNO
3: H
2the solution of O=15～19:15～19:18～22, preferably, HCl:HNO
3: H
2the proportioning of O is 17:17:20.Understandably, the concentration of etching solution can be adjusted with the resistance of an ITO layer 3, and ITO layer 3 resistance are higher, and its concentration is higher.
S2-24: adopt and go black liquid that dry film is removed, clean and be dried, to make X-axis electrode layer.Particularly, go black liquid can be concentration 1%-3% as KOH, the solution such as NaOH, to remove residual dry film.
S2-3: make the second shadow layer 4 that disappears on an ITO layer 3.
Particularly, step S2-3 comprises:
S2-31: an ITO layer 3 is cleaned to also heat and dry dry.
S2-32: under vacuum condition, adopt sputter mode niobium pentaoxide or silicon oxynitride in the one side of an ITO layer 3.
S2-33: under vacuum condition, adopt sputter mode applying silicon oxide in the one side that is being coated with niobium pentaoxide or silicon oxynitride, to complete the second making that disappears shadow layer 4.
S2-4: disappear and make the 2nd ITO layer 5, the two ITO layer 5 on shadow layer 4 and comprise the Y-axis electrode layer being formed by some Y direction electrodes second.
Particularly, step S2-4 comprises:
S2-41: under vacuum condition, adopt sputter mode to plate indium tin oxide layer on the 2nd ITO layer 5.
S2-42: adopt film mulching method to be covered with dry film in the one side that is coated with indium tin oxide layer, use the expose pattern of the Y-axis electrode layer being formed by some Y direction electrodes of light shield.
S2-43: use developer by the pattern development of Y-axis electrode layer, adopt etching solution to carry out etching to indium tin oxide layer.
S2-44: adopt and go black liquid that dry film is removed, clean and be dried, to make Y-axis electrode layer.Particularly, go black liquid can be concentration 1%-3% as KOH, the solution such as NaOH, to remove residual dry film.
S2-5: adopt second of the position that is connected with X-axis electrode layer of etching paste etching frame protective layer 6 tops disappear shadow layer 4 making the X metal wire 7 being connected with X-axis electrode layer and the Y metal wire 8 being connected with Y-axis electrode layer; X metal wire 7 and Y metal wire 8 are tied in flexible circuit board.
Particularly, step S2-5 comprises:
S2-51: adopt second of the position that is connected with X-axis electrode layer of the etching paste etching frame protective layer 6 tops shadow layer 4 that disappears, to appear X-axis electrode layer end.Particularly, etching paste can adopt Merck KGaA etching paste, and the second shadow layer 4 that disappears being formed by silicon dioxide sputter for etching, to appear X-axis electrode layer end.
S2-52: adopt screen printer silk-screen the X metal wire 7 being connected with X-axis electrode layer and the Y metal wire 8 being connected with Y-axis electrode layer.Particularly, adopt screen printer silk-screen X metal wire 7 and Y metal wire 8, and toast 50～70min at 140～160 DEG C of temperature, to complete the making of X metal wire 7 and Y metal wire 8.Understandably, X metal wire 7 and Y metal wire 8 can adopt elargol line.
S2-53: X metal wire 7 and Y metal wire 8 are tied in flexible circuit board, and silk-screen is protected ink on X metal wire 7 and Y metal wire 8, to complete the making of projecting type capacitor screen.
In the method for making of the projecting type capacitor screen without putting up a bridge provided by the utility model, by make the second shadow layer 4 that disappears between an ITO layer 3 and the 2nd ITO layer 5, to save the bridging technique between an ITO layer 3 and the 2nd ITO layer 5, improve the yield of production; And can make the shadow better effects if that disappears of the pattern of the X-axis electrode layer on the first ITO layer 3, improve its production quality.
The utility model describes by several specific embodiments, it will be appreciated by those skilled in the art that, in the situation that not departing from the utility model scope, can also carry out various conversion and be equal to alternative the utility model.In addition, for particular condition or concrete condition, can make various amendments to the utility model, and not depart from scope of the present utility model.Therefore, the utility model is not limited to disclosed specific embodiment, and should comprise the whole embodiments that fall within the scope of the utility model claim.
Claims (2)
1. one kind without the projecting type capacitor screen of putting up a bridge, and it is characterized in that: comprise glass substrate (1), be arranged at first of described glass substrate (1) disappear shadow layer (2), be arranged at described first disappear shadow layer (2) an ITO layer (3), be arranged at disappear shadow layer (4) and be arranged at the described second the 2nd ITO layer (5) disappearing above shadow layer (4) of second of described ITO layer (3) top; A described ITO layer (3) comprises the X-axis electrode layer being formed by some X-direction electrodes, and described the 2nd ITO layer (5) comprises the Y-axis electrode layer being formed by some Y direction electrodes; The described projecting type capacitor without putting up a bridge shields and also comprises the Y metal wire (8) that is arranged at the X metal wire (7) at described X-axis electrode layer edge and is arranged at described Y-axis electrode layer edge, and described X metal wire (7) is connected with flexible circuit board respectively with described Y metal wire (8).
2. the projecting type capacitor screen without putting up a bridge according to claim 1, is characterized in that: the edge of described glass substrate (1) is provided with frame protective layer (6).
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| CN201420346038.XU CN203930777U (en) | 2014-06-25 | 2014-06-25 | A kind of projecting type capacitor screen without putting up a bridge |
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| CN201420346038.XU CN203930777U (en) | 2014-06-25 | 2014-06-25 | A kind of projecting type capacitor screen without putting up a bridge |
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| CN203930777U true CN203930777U (en) | 2014-11-05 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104049825A (en) * | 2014-06-25 | 2014-09-17 | 向火平 | Bridging-free projection type capacitive screen and manufacturing method thereof |
| CN104635991A (en) * | 2015-03-11 | 2015-05-20 | 合肥鑫晟光电科技有限公司 | Shadow elimination structure, touch screen and preparation method of touch screen |
| CN108491103A (en) * | 2018-02-28 | 2018-09-04 | 信利半导体有限公司 | A kind of production method of two-sided ITO products and two-sided ITO products |
-
2014
- 2014-06-25 CN CN201420346038.XU patent/CN203930777U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104049825A (en) * | 2014-06-25 | 2014-09-17 | 向火平 | Bridging-free projection type capacitive screen and manufacturing method thereof |
| CN104635991A (en) * | 2015-03-11 | 2015-05-20 | 合肥鑫晟光电科技有限公司 | Shadow elimination structure, touch screen and preparation method of touch screen |
| CN104635991B (en) * | 2015-03-11 | 2019-01-11 | 合肥鑫晟光电科技有限公司 | A kind of shadow eliminating structure, touch screen and preparation method thereof |
| US10198134B2 (en) | 2015-03-11 | 2019-02-05 | Boe Technology Group Co., Ltd. | Shadow elimination arrangement, touch screen and method for producing the same |
| CN108491103A (en) * | 2018-02-28 | 2018-09-04 | 信利半导体有限公司 | A kind of production method of two-sided ITO products and two-sided ITO products |
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Effective date of registration: 20180518 Address after: 644000 6, 7 West Section of Hong Kong Garden Road, Lingang Economic and Technological Development Zone, Yibin, Sichuan Patentee after: Sichuan Lighting Technology Co.,Ltd. Address before: 518102 No. 105, 5 Cui Hu garden, Xixiang, Baoan District, Shenzhen, Guangdong Patentee before: Xiang Huoping |
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