CN104037045B - The method of test substrate de-clamping terminal - Google Patents
The method of test substrate de-clamping terminal Download PDFInfo
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- CN104037045B CN104037045B CN201310068404.XA CN201310068404A CN104037045B CN 104037045 B CN104037045 B CN 104037045B CN 201310068404 A CN201310068404 A CN 201310068404A CN 104037045 B CN104037045 B CN 104037045B
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Abstract
The invention provides a kind of method of testing substrate de-clamping terminal, wherein, in described plasma process chamber, be provided with a base station, described base station comprises electrostatic chuck, described substrate is arranged at electrostatic chuck top, in described base station, be provided with some gas passages, downstream, described gas passage is connected with a gas return path being formed in parallel by metering hole and valve, also be connected with control device and gas supply device in turn in described gas return path downstream, wherein, described method comprises the steps: step (b), closes described control device and valve; Step (c), tests the pressure in described gas passage, has reached de-clamping terminal in the time that the pressure in described gas passage reaches the first rate of change. De-clamping terminal test of the present invention more accurately and reliably.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of substrate de-clamping terminal testedMethod.
Background technology
Plasma treatment appts utilize the operation principle of vacuum reaction chamber carry out semiconductor chip and etc.The processing of the substrate of ion flat board. The operation principle of vacuum reaction chamber is to pass in vacuum reaction chamberThe reacting gas that contains suitable etching agent source gas, and then this vacuum reaction chamber is carried out to radio frequency energyAmount input, with activated reactive gas, excites and maintains plasma, so that difference etching substrateLip-deep material layer or on substrate surface depositing layer of material, and then to semiconductor chip and etc. fromSub-flat board is processed.
Plasma process chamber is carried out in processing procedure process substrate, and substrate is arranged in chamberOn electrostatic chuck. Electrostatic chuck below is provided with a DC electrode, when DC electrode has connected electricityAfter source, can produce an electrostatic attraction, substrate is held on electrostatic chuck. After processing procedure finishes,DC electrode disconnection is connected with power supply, then substrate is carried out to de-clamping.
Engineer relies on the signal of de-clamping terminal to judge that whether substrate de-clamping is successful, to enterThe a series of activities that row is follow-up.
Therefore the judgement accuracy of de-clamping terminal is just particularly important.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of for multi-chamber plasmaThe method of the minimizing particle contamination for the treatment of apparatus.
First aspect present invention provides a kind of test substrate for plasma process chamber to goThe method of clamping terminal, wherein, is provided with a base station, institute in described plasma process chamberState base station and comprise electrostatic chuck, described substrate is arranged at electrostatic chuck top, at described base stationIn be provided with some gas passages, downstream, described gas passage is connected with one by metering hole and valveThe gas return path being formed in parallel, be also connected with in turn in described gas return path downstream control device andGas supply device, wherein, described method comprises the steps:
Step (b), closes described control device and valve;
Step (c), tests the pressure in described gas passage, when the pressure in described gas passageReach the first rate of change within the very first time time, reach de-clamping terminal.
Further, also comprise before step (a) in step (b): open described valve and control dressPut, make described gas supply device continue supply gas so that substrate back is produced to a de-clampingPower.
Further, before described gas return path, be also in series with a pressure test meter, its in order toTest the pressure in described gas passage.
Further, described plasma process chamber also comprises several elevate a turnable ladder thimbles, and it canBe arranged at movably among described base station, wherein, also comprise afterwards step in described step (c)(d), promote described several elevate a turnable ladder thimbles to apply an elevate a turnable ladder power to substrate back, makeIt is promoted to and exceedes described electrostatic chuck.
Further, described plasma process chamber also comprises a drive unit, and it is in order to driveMoving described elevate a turnable ladder thimble moves.
Further, described drive unit comprises cylinder or motor.
Further, in the chamber sidewall of described plasma process chamber, be also provided with a biographyDefeated window, described chamber outside is also provided with a manipulator, and wherein, described step (d) is afterwardsAlso comprise step (e): described manipulator stretches into chamber interior by described transmission window, and mobileTo described substrate top.
Further, also comprise afterwards step (f) in described step (e): load described substrate to instituteState manipulator, described manipulator transfers out chamber by substrate by described transmission gate.
Further, the span of the described very first time is 1 second to 3 seconds.
Further, the span of described the first rate of change is more than 30%.
Further, described method also comprises the steps: according to required in described gas passageGas flow and/or flow velocity determine the aperture of described metering hole.
De-clamping terminal test mechanism provided by the invention is more accurately reliable.
Brief description of the drawings
Fig. 1 is that the structure of the gas supply system for plasma process chamber of prior art is shownIntention;
Fig. 2 is the gas for plasma process chamber according to a specific embodiment of the present inventionThe structural representation of body supply system;
Fig. 3 is the survey for plasma process chamber according to a specific embodiment of the present inventionThe flow chart of steps of examination substrate de-clamping terminal method;
Fig. 4 is prior art and technique effect comparison diagram of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 is that the structure of the gas supply system for plasma process chamber of prior art is shownIntention. As shown in Figure 1, in plasma chamber 100, pass into process gas, process gas due toPass into RF energy and the generation plasma that is excited, with to being positioned on electrostatic chuck 102Substrate 101 be correlated with processing procedure, such as etching and deposition etc. The air supply system that prior art providesComprise some gas passages 103, gas passage 103 is in series with control device 105 further successivelyWith gas supply device 106. Wherein, feeder 106 is for continuing supply gas. ControllingInstall 105 upstreams and be also provided with a valve 107.
After processing procedure, gas supply device 106 continues supply gas, and control device 105 leavesOpen the path of itself and gas supply device 106. Now, valve 107 is also opened. Thereby gasBody enters gas passage 103, and the top of some gas passages 103 respectively has a shower nozzle, gasSpray to substrate back 101a by shower nozzle, substrate 101 is produced to a power, that it is slowly departed from is quietElectricity chuck 102.
When the test substrate de-clamping terminal of prior art, because substrate 101 is in processing procedure or goBefore clamping, to see as with electrostatic chuck 102 be gas-tight, therefore the pressure in gas passage nowVery large. But the shower nozzle that is subject to gas passage 103 when substrate 101 sprays to substrate back 101aThe power of γ-ray emission time, depart from gradually electrostatic chuck 102. Generally, for de-clampingOnce the gas duration be greater than a scheduled time, think and carried out de-clamping step. Then, shutoff control unit 105 is to cut off the air feed of gas supply device 106, shut off valveDoor 107, catches de-clamping terminal, once capture de-clamping terminal, thinks de-clampingSuccess. But, once between substrate 101 and electrostatic chuck 102 due to the elevate a turnable ladder of γ-ray emissionPower effect and start to depart from, gas is revealed from substrate 101 bottoms in a large number, in gas passage 103Pressure rapid drawdown is 0, and this is considered to the signal of de-clamping terminal. But, be sometimes baseBetween sheet 101 and electrostatic chuck 102, produced space and completed de-clamping not yet completely, therefore thisTime de-clamping terminal be inaccurate.
The present invention is exactly in order accurately to test de-clamping terminal. Fig. 2 is according to one of the present inventionThe structural representation of the gas supply system for plasma process chamber of specific embodiment. DengGas ions treatment chamber 200 has a process chambers (not shown), and process chambers is essentiallyCylindricality, and process chambers sidewall perpendicular, have be arranged in parallel upper in process chambersElectrode (not shown) and bottom electrode. Conventionally, the region between top electrode and bottom electrode is for processingRegion 204, this region 204 by formation high-frequency energy to light and to maintain plasma. At staticSubstrate 201 to be processed is placed in chuck 202 tops, this substrate 201 can be wait to want etching orThe semiconductor chip of processing or treat to be processed into the glass plate of flat-panel monitor. Wherein, described inElectrostatic chuck 202 is for clamping substrate. Reacting gas is input to from gas source (not shown)In process chambers, one or more radio-frequency power supply (not shown) can be applied to lower electricity individuallyExtremely go up or be applied to respectively on top electrode and bottom electrode, in order to radio-frequency power is transported to simultaneouslyOn bottom electrode or on top electrode and bottom electrode, thereby at the large electric field of the inner generation of process chambers. GreatlyMost electric field lines are comprised in the processing region 204 between top electrode and bottom electrode, this electric field pairThe electronics that is present on a small quantity process chambers inside accelerates, and makes it the gas with the reacting gas of inputtingBody molecular collision. These collisions cause the ionization of reacting gas and exciting of plasma, therebyIn process chambers, produce plasma. The neutral gas molecule of reacting gas is standing these forceful electric power, lose electronics when the field, left the ion of positively charged. The ion of positively charged adds towards bottom electrode directionSpeed, is combined with the neutral substance in processed substrate, excites substrate processing, i.e. etching, depositDeng. Certain suitable position in plasma process chamber 200 is provided with exhaust gas region, rowTerritory, gas area and external exhaust apparatus (not shown, for example vavuum pump pump) are connected, in order to locateIn reason process, extract the reacting gas of using and bi-product gas out chamber. Wherein, plasma approximatelyBeam ring (not shown) is arranged at electrostatic chuck 202 peripheries, for by plasma confinement in processingIn region 204.
As shown in Figure 2, the invention provides one removes substrate for plasma process chamberThe feeder of clamping, wherein, is provided with a base station in described plasma process chamber 200,Described base station comprises electrostatic chuck 202, and described substrate 201 is arranged at electrostatic chuck 202 tops,Wherein, described feeder is arranged at the below of described substrate 201. Described air supply system comprisesAt least one gas passage 203, it is arranged in described base station main body, for holding gas.Described gas passage 203 is connected with a control device 205. The downstream of control device 205 connectsHave a gas supply device 206, it can provide gas, and is conveyed into described gas passage203. Each described gas passage 203 has a fumarole, and it can be logical by described gasGas in road 203 is blown between described substrate bottom surface 201a and described electrostatic chuck 202.
Wherein, be also connected with a gas return path in described control device 205 upstreams, this loop bagDraw together metering hole in parallel (orifice) 209 and valve 207. The characteristic of metering hole 209 is,Its pressure and flow are directly proportional, and the pressure ratio of its upstream and downstream must be to exceed 2Doubly. Restriction orifice can be used as flow measuring element and is used for measuring flow, also can be used as throttlingElement be used for limited flow rate and reduce pressure. Before and after metering hole, there is certain pressure reduction, fluid streamThrough metering hole, for certain aperture, the flow of the metering hole of flowing through is along with pressure reduction increases and increases.But in the time that pressure reduction exceedes a certain numerical value (being called critical pressure differential), at this moment, no matter how pressure reduction increases,The flow of metering hole of flowing through will maintain certain numerical value and no longer increase. Metering hole is exactly according to thisOne principle limits the flow of fluid and reduces pressure. Therefore, no matter the upstream of metering hole pressureHow power changes, and its gas flow rate that flows through metering hole is determined. So just avoid gasThere is the situation that flow or flow velocity increase suddenly at short notice.
Fig. 3 is the survey for plasma process chamber according to a specific embodiment of the present inventionThe flow chart of steps of examination substrate de-clamping terminal method. Below as shown in Figure 3, in conjunction with Fig. 2 to thisThe method of a kind of test substrate de-clamping terminal for plasma process chamber that invention providesDescribe in detail, wherein, described method comprises the steps:
First perform step S2, close described control device 205 and valve 207. Generally,Once the gas duration for de-clamping is greater than a scheduled time, thinks and has carried outDe-clamping step, wherein, in the present embodiment, the described gas for de-clamping typically isHelium. After having carried out de-clamping step, just control device 205 and valve 207 need to be closedClose, to cut off the continuation air feed of gas supply device 206.
Then perform step S3, test the pressure in described gas passage 203, wherein, gas is logicalPressure in road 203 is signifying flow and the flow velocity of helium in passage now. When described gas passageIn 203 pressure think reach the first rate of change within the very first time time and reached de-clamping eventuallyPoint.
Particularly, after shutoff control unit 205 and valve 209, at gas return path and control dressPut and in the pipeline between 205, be also full of helium. When substrate back 201a and electrostatic chuck 202Between start to depart from and start to reveal after helium, the helium of 203 spouts from gas return path to gas passageGas is light leak progressively, because valve 207 is closed, between gas return path and control device 205Helium in pipeline adds in gas return path pipeline before lentamente by metering hole 209, byCan limit flow velocity and the flow of helium in metering hole 209, therefore can also maintain the helium in the short timeGas is supplied with. At this moment,, if there is the halfway situation of substrate de-clamping of the prior art, also canRely on the helium sustainable supply in the short time can continue to provide an elevate a turnable ladder power to substrate bottom surface 201a,Continue de-clamping.
Further, before step S2, also comprise step S1: after processing procedure finishes, described in maintenanceThe unlatching of valve 207 and control device 205, makes described gas supply device 206 continue supplyHelium, helium passes through the shower nozzle of gas passage 203 to substrate back 201a and electrostatic chuck 202Between blow, so that substrate 201 back sides are produced to a de-clamping power from bottom to top.
Wherein, as shown in Figure 2, return at the gas being formed in parallel by metering hole 209 and valve 207Before road, be also in series with a pressure test meter 212, it can be tested in described gas passage 203Pressure. Having in the prior art ripe technology as for the 26S Proteasome Structure and Function of pressure test meter props upHold, therefore, for brevity, repeat no more herein.
Further, described plasma process chamber 200 also comprises several elevate a turnable ladder thimbles211, it is arranged among described base station movably, and described elevate a turnable ladder thimble 211 can be along hanging downNogata moves up and down and is promoted to and exceedes electrostatic chuck 202, drives thus substrate 201 to enter oneStep departs from electrostatic chuck after de-clamping. Wherein, after described step S3, also comprise stepS4, promotes described several elevate a turnable ladder thimbles 211 to apply an elevate a turnable ladder power to substrate back201a, is promoted to it and exceedes described electrostatic chuck 202.
Further, described plasma process chamber 200 also comprises a drive unit 210,It can drive described elevate a turnable ladder thimble 211 to move. Typically, described drive unit 210 comprisesCylinder or motor.
Further, in the chamber sidewall of described plasma process chamber 200, be also provided with oneIndividual transmission window (not shown), it passes in and out chamber for substrate transport 201. In addition,Chamber outside is also provided with a manipulator (not shown), and it is as the carrier of substrate transport. ItsIn, after described step S4, also comprise step S5: described manipulator is stretched by described transmission windowEnter chamber interior, and move to described substrate 101 tops.
Then, execution step S6: load described substrate to described manipulator, described manipulator willSubstrate transfers out chamber by described transmission gate.
Wherein, the span of the described very first time is 1 to 3 second. Getting of described the first rate of changeValue scope is more than 30%. For example,, when pressure was at 1 second, 1.1 seconds, 1.3 seconds, 1.5 seconds, 2Second, 2.3 seconds, 2.38 seconds, 2.7 seconds, 2.8 seconds, 3 seconds interiorly reaching 31%, 32%, 35%,40%, 45%, 50%, 63%, 74%, 78%, 80%, when 98% Equal variation, think and reachedThe condition of de-clamping terminal.
Further, described method also comprises the steps: according to required in described gas passageGas flow and/or flow velocity determine the aperture of described metering hole. Engineer can be according to processing procedureRequired metering hole is configured, low being easy to of metering hole cost simple in structure replaced.
Fig. 4 is prior art and technique effect comparison diagram of the present invention, and wherein, ordinate represents heliumThe air pressure of gas in cooling pipe, abscissa represents the time, upper figure represents the technology effect of prior artReally, figure below represents technique effect of the present invention. As shown in Figure 4, for example prior art and the present inventionHelium air pressure before de-clamping in gas passage is all 10Torr, in prior art owing to not havingMetering hole is set, therefore as long as substrate and electrostatic chuck start to depart from and cause helium to a certain degreeAfter leakage, air pressure reduces to 0 from 10Torr at once, and system is thought and received de-clamping terminalSignal, but also have the now not de-clamping success of certain probability, therefore de-clamping terminal nowInaccurate. Review prior art, due to therefore control device 205 Hes of setting of limited discharge orificeHelium between gas return path can also slowly supplement, for continuing to provide the elevate a turnable ladder power of de-clamping,Even if therefore there is the incomplete situation of previously described de-clamping, also can rely on this supplementary heliumGas has continued de-clamping, as shown in the figure, after the helium air pressure in gas passage slowly reducesSuddenly drag down, the de-clamping endpoint signal now receiving should be accurately and effectively. Therefore, originallyThe de-clamping terminal test mechanism of invention is more reliable compared with prior art.
Although content of the present invention has been done detailed introduction by above preferred embodiment, shouldRecognize that above-mentioned description should not be considered to limitation of the present invention. Read those skilled in the artRead after foregoing, for multiple amendment of the present invention and substitute will be all apparent. CauseThis, protection scope of the present invention should be limited to the appended claims.
Claims (11)
1. for the method for the test substrate de-clamping terminal of plasma process chamber, itsIn, in described plasma process chamber, being provided with a base station, described base station comprises electrostatic chuckDish, described substrate is arranged at electrostatic chuck top, is provided with some gas logical in described base stationRoad, described gas passage downstream is connected with the gas being formed in parallel by metering hole and valve and returnsRoad, is also connected with control device and gas supply device in turn in described gas return path downstream, itsIn, described method comprises the steps:
Step (b), closes described control device and valve;
Step (c), tests the pressure in described gas passage, when the pressure in described gas passageReach the first rate of change within the very first time time, reach de-clamping terminal.
2. method according to claim 1, is characterized in that, also wraps before in step (b)Draw together step (a): open described valve and control device, make described gas supply device continue to supplyAnswer gas substrate back is produced to the power of a de-clamping.
3. method according to claim 1 and 2, is characterized in that, returns at described gasBefore road, be also in series with a pressure test meter, it is in order to test the pressure in described gas passage.
4. method according to claim 3, is characterized in that, described Cement Composite Treated by PlasmaChamber also comprises several elevate a turnable ladder thimbles, and it is arranged among described base station movably, wherein,Also comprise afterwards step (d) in described step (c), promote described several elevate a turnable ladder thimbles to applyAn elevate a turnable ladder power, to substrate back, is promoted to it and exceedes described electrostatic chuck.
5. method according to claim 4, is characterized in that, described plasma placeReason chamber also comprises a drive unit, and it is in order to drive described several elevate a turnable ladder thimbles to move.
6. method according to claim 5, is characterized in that, described drive unit bagDraw together cylinder or motor.
7. method according to claim 4, is characterized in that, described plasma placeIn the chamber sidewall of reason chamber, be also provided with a transmission window, described plasma process chamberOutside be also provided with a manipulator, wherein, described step (d) also comprises step (e) afterwards:Described manipulator stretches into chamber interior by described transmission window, and moves to described substrate top.
8. method according to claim 7, is characterized in that, in described step (e) afterwardsAlso comprise step (f): load described substrate to described manipulator, described manipulator is logical by substrateCross described transmission window and transfer out chamber.
9. method according to claim 1, is characterized in that, the getting of the described very first timeValue scope is 1 second to 3 seconds.
10. method according to claim 1, is characterized in that, described the first rate of changeSpan is more than 30%.
11. methods according to claim 1, is characterized in that, described method also comprisesFollowing steps: determine institute according to gas flow required in described gas passage and/or flow velocityState the aperture of metering hole.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310068404.XA CN104037045B (en) | 2013-03-04 | 2013-03-04 | The method of test substrate de-clamping terminal |
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| CN201310068404.XA CN104037045B (en) | 2013-03-04 | 2013-03-04 | The method of test substrate de-clamping terminal |
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| CN104037045A CN104037045A (en) | 2014-09-10 |
| CN104037045B true CN104037045B (en) | 2016-05-11 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106935540B (en) * | 2015-12-29 | 2019-08-06 | 中微半导体设备(上海)股份有限公司 | Chip jacking apparatus and its jacking method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1118425A2 (en) * | 2000-01-21 | 2001-07-25 | Applied Materials, Inc. | Method and apparatus for dechucking a workpiece from an electrostatic chuck |
| CN101202212A (en) * | 2006-12-11 | 2008-06-18 | 爱德牌工程有限公司 | Substrate damage prevention system and method |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8832916B2 (en) * | 2011-07-12 | 2014-09-16 | Lam Research Corporation | Methods of dechucking and system thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1118425A2 (en) * | 2000-01-21 | 2001-07-25 | Applied Materials, Inc. | Method and apparatus for dechucking a workpiece from an electrostatic chuck |
| CN101202212A (en) * | 2006-12-11 | 2008-06-18 | 爱德牌工程有限公司 | Substrate damage prevention system and method |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |