CN104035250A - 主动元件阵列基板 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
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Abstract
本发明公开了一种能节省材料成本的主动元件阵列基板,其包含基材、扫描线、数据线、薄膜晶体管、彩色滤光层、透明导电层、绝缘层及像素电极。彩色滤光层覆盖并接触扫描线、数据线及薄膜晶体管。透明导电层位于彩色滤光层上,并藉由彩色滤光层与扫描线、数据线及薄膜晶体管电性隔离。绝缘层覆盖透明导电层。像素电极位于绝缘层上,且像素电极连接薄膜晶体管。
Description
技术领域
本发明是有关于一种主动元件阵列基板。
背景技术
液晶显示器为目前广泛使用的显示器。相较于阴极射线管(CRT)显示器,其具有体积小、质量轻、厚度薄、耗电量低等优点。因此,以液晶显示器为主的平面显示器近年来已完全取代传统CRT显示器成为显示器市场上的主流商品。
液晶显示面板主要包含主动元件阵列基板、彩色滤光片基板以及夹设于上述两基板之间的液晶层。一般而言,主动元件阵列基板是由多层金属材料以及多层绝缘材料藉由多道光学微影蚀刻制程所制得。换言之,材料及制程皆占有一定比例的成本。因此,如何得到一种能够节省材料成本的主动元件阵列基板一直是待解决的重要课题。
发明内容
本发明的目的在于提供一种可节省材料成本且兼具有高开口率的主动元件阵列基板。
本发明的一态样提供一种主动元件阵列基板,其包含基材、扫描线、数据线、薄膜晶体管、彩色滤光层、透明导电层、绝缘层及像素电极。多条扫描线位于基材上。多条数据线位于基材上,与扫描线交错,以定义基材的多个次像素区。至少一薄膜晶体管电性连接扫描线之一条及数据线之一条。彩色滤光层覆盖并接触扫描线、数据线及薄膜晶体管。透明导电层位于彩色滤光层上,并藉由彩色滤光层与扫描线、数据线及薄膜晶体管电性隔离。绝缘层覆盖透明导电层。至少一像素电极位于绝缘层上,并覆盖基材的次像素区之一,且像素电极连接薄膜晶体管。
根据本发明一实施方式,彩色滤光层包含多个彩色滤光图案相互邻接且接触。
根据本发明一实施方式,至少两个彩色滤光图案部分重叠。
根据本发明一实施方式,透明导电层提供一共通电压电位。
根据本发明一实施方式,透明导电层覆盖并接触彩色滤光层。
根据本发明一实施方式,透明导电层覆盖基材的次像素区及数据线。
根据本发明一实施方式,透明导电层更包含覆盖扫描线及薄膜晶体管。
根据本发明一实施方式,彩色滤光层具有一第一贯孔露出薄膜晶体管的一部分。
根据本发明一实施方式,绝缘层具有一第二贯孔,位于第一贯孔上方,使薄膜晶体管的该部分露出。
根据本发明一实施方式,像素电极藉由第一贯孔及第二贯孔连接薄膜晶体管。
附图说明
为让本发明的上述和其他目的、特征、优点与实施例能更明显易懂,附图说明如下:
图1显示依照本发明一实施方式的主动元件阵列基板的上视图。
图2A-2B显示沿图1的2-2’线段的主动元件阵列基板的剖面示意图。
图3显示沿图1的3-3’线段的主动元件阵列基板的剖面示意图。
其中,附图标记:
100主动元件阵列基板
110基材
110a次像素区
130栅介电层
130’主动层
1401漏极
150彩色滤光层
150a第一贯孔
1501、1502、1503彩色滤光图案
160透明导电层
160a开口
170绝缘层
170a第二贯孔
180像素电极
200对向基板
210对向基材
220遮光层
230对向透明电极
300显示介质层
DL数据线
SL扫描线
T薄膜晶体管
具体实施方式
以下将以附图公开本发明的多个实施方式,为明确说明起见,许多实务上的细节将在以下叙述中一并说明。然而,应了解到,这些实务上的细节不应用以限制本发明。也就是说,在本发明部分实施方式中,这些实务上的细节是非必要的。此外,为简化附图起见,一些现有惯用的结构与元件在附图中将以简单示意的方式绘示之。
图1显示依照本发明一实施方式的主动元件阵列基板100的上视图。图2A-2B显示沿图1的2-2’线段的主动元件阵列基板100的剖面示意图。其中图2A与图2B分属不同的实施例。
请参照图1与图2A,主动元件阵列基板100包含基材110、扫描线SL、数据线DL、薄膜晶体管T、彩色滤光层150、透明导电层160、绝缘层170及像素电极180。
基材110需具有高光穿透率、足够的机械强度以及机械强度,其可例如为玻璃、石英、透明高分子材料或其他合适的材质。
多条相互平行的扫描线SL位于基材110上,如图1所示。当然,也可设置共通电极线(未绘示)于基材110上。共同电极线(未绘示)可平行于扫描线SL的延伸方向。
多条相互平行的数据线DL位于基材110上,并与扫描线SL相互垂直交错,以定义基材110的多个次像素区110a。扫描线SL与数据线DL的材料可包含金属材料。金属材料包含钼(Mo)、铬(Cr)、铝(Al)、钕(Nd)、钛(Ti)、其他合适的材料或上述的组合。
至少一薄膜晶体管T对应于其中一次像素区110a而设置于基材110上,并电性连接一条扫描线SL及一条数据线DL。当然,也可在基材110的每一个次像素区110a上分别设置一个薄膜晶体管T。在本实施方式中,扫描线SL的一部分作为栅极,数据线DL的一部分作为源极,如图1及图2A所示。也就是说,薄膜晶体管T包含栅极(扫描线SL的一部分)、源极(数据线DL的一部分)、漏极1401与主动层130’。并且,栅介电层130夹设于主动层130’与栅极(扫描线SL的一部分)之间,如图2A所示。当然,所属技术领域的技术人员应了解薄膜晶体管T可为底栅型(如图1例示)或顶栅型(未绘示)。因此,电路布局(layout)可作适当的变动,并不限于图1例示者。
栅介电层130覆盖扫描线SL,如图2A所示。栅介电层130的材料可包含有机介电材、无机介电材或上述的组合。有机介电材例如为聚亚酰胺(Polyimide,PI)、其衍生物、其他适合的材料或上述的组合;无机材料例如为氧化硅、氮化硅、其他适合的材料或上述的组合。在一实施例中,栅介电层130毯覆式覆盖基材110的次像素区110a及扫描线SL。
在栅介电层130上设置一主动层130’,如图1及图2A所示。主动层130’可包含非晶硅、多晶硅、单晶硅、有机半导体、氧化物半导体、其他适合的材料或上述的组合。于实际应用中,主动层130’的形状及其设置位置不以图1所绘示者为限。
彩色滤光层150覆盖并接触扫描线SL、数据线DL及薄膜晶体管T,如图2A所示。也就是说,彩色滤光层150用以保护下方扫描线SL、数据线DL及薄膜晶体管T等结构。
在本实施方式中,彩色滤光层150包含多个彩色滤光图案相互邻接且接触。由于光线透过彩色滤光层150后会产生不同的颜色,故彩色滤光图案之间的交界处必须位于扫描线SL或数据线DL等不透光的元件上。
彩色滤光图案的材料可为彩色光阻(如红、绿、蓝或其他颜色的彩色光阻)或其他合适的材料。如图1与图2A所示,彩色滤光层150包含彩色滤光图案1501、1502、1503,而每个彩色滤光图案对应一次像素区110a。例如可将不同颜色的彩色光阻藉由多道微影及固化制程形成多个彩色滤光图案于每个次像素区110a的基材110上。并且,彩色滤光图案之间相互邻接且接触,构成无缝隙的彩色滤光层150。
在另一实施例中,如图2B所示,两个彩色滤光图案1501、1502部分重叠于扫描线SL上。如此一来,可避免彩色滤光图案1501、1502间存在有任何的缝隙。
透明导电层160位于彩色滤光层150上,且藉由彩色滤光层150与扫描线SL、数据线DL及薄膜晶体管T电性隔离。如图2A所示,透明导电层160覆盖并接触彩色滤光层150。由于彩色滤光层150为一介电材料,且其中并无缝隙,故可作为透明导电层160与扫描线SL、数据线DL及薄膜晶体管T间的保护层。也因为不需另设置一保护层覆盖薄膜晶体管T、扫描线SL及数据线DL,而可节省材料成本。
在一实施例中,透明导电层160提供一共通电压电位。换言之,将一共通电压(common voltage)施加至透明导电层160,使其具有共通电压电位。
在一实施例中,透明导电层160覆盖彩色滤光图案1501、1503及其下方的基材110的次像素区110a及数据线DL,如图3所示。藉此,利用透明导电层160屏蔽下方数据线DL,使像素电极180的信号不被数据线DL的信号干扰。因此,可避免数据线DL与像素电极180间的电容耦合效应造成液晶反扭转(reverse domain)及漏光问题。
在另一实施例中,透明导电层160更包含覆盖扫描线SL及薄膜晶体管T,如图2A所示。也就是说,透明导电层160毯覆式覆盖彩色滤光层150,亦即全面覆盖基材110的次像素区110a、数据线DL、扫描线SL及薄膜晶体管T。藉此,透明导电层160能够完整屏蔽数据线DL、栅极线GL与薄膜晶体管T,避免像素电极180的信号受到干扰。
另外,相较于透明导电层160毯覆式覆盖彩色滤光层150的实施例,透明导电层160覆盖基材110的次像素区110a及数据线DL而不覆盖扫描线SL的实施例能够降低透明导电层160的电阻电容负载(RC loading)。
绝缘层170覆盖透明导电层160,且至少一像素电极180对应一次像素区110a而设置于绝缘层170上,如图2A所示。当然,也可在每一次像素区110a的绝缘层170上分别设置一像素电极180。
像素电极180连接薄膜晶体管T。举例来说,如图2A所示,彩色滤光层150具有第一贯孔150a露出薄膜晶体管T的漏极1401的一部分。绝缘层170具有第二贯孔170a,位于第一贯孔150a上方,使漏极1401的该部分露出。因此,像素电极180可藉由第一贯孔150a及第二贯孔170a连接薄膜晶体管T的漏极1401。
并且,透明导电层160、绝缘层170与像素电极180构成一大面积的透明电容,故相较于一般设有金属电容的主动元件阵列基板而言,本发明的主动元件阵列基板具有较高的开口率。在一实施例中,透明导电层160可具有狭缝图案(slit pattern)(也就是狭缝图案处没有透明导电层160),以调整电容大小。另外,如图2A所示,透明导电层160具有开口160a,使第二贯孔170a中的像素电极180与透明导电层160间藉由绝缘层170隔离。
透明导电层160与像素电极180的材料可为氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铟镓锌(IGZO)或其他合适的透明导电材料。像素电极180的材料可与透明导电层160的材料相同或不同。
显示面板除了包含上述的主动元件阵列基板100的外,还包含对向基板200与显示介质层300,如图2A所示。主动元件阵列基板100中各元件的实施方式请参考上述,故在此不再赘述。
对向基板200平行于主动元件阵列基板100。在本实施方式中,对向基板200包含对向基材210以及遮光层220。其中遮光层220对应主动元件阵列基板100的扫描线SL及数据线DL的位置。由于主动元件阵列基板100包含有彩色滤光层150,因此不需另设置彩色滤光层于对向基材210上。
以扭转向列式液晶显示面板(twisted nematic LCD,TN-LCD)而言,对向基板200更包含一对向透明电极230覆盖遮光层220以及对向基材210,如图2A所示。对向透明电极230与像素电极180间的电压可控制液晶分子的扭转程度,进而控制光线穿透程度。
以横向电场驱动式液晶显示面板而言(in-plane switching LCD,IPS-LCD),对向基板200不需设置对向透明电极,而是在主动元件阵列基板100的基材110的次像素区110a上形成多个条状像素电极(未绘示)及共通电极(未绘示)。条状像素电极及共通电极间形成的横向电场能够控制液晶分子的扭转程度。
显示介质层300夹设于主动元件阵列基板100及对向基板200间。显示介质层300的材料可例如为液晶、电湿润材料、自发光材料或其他适合的材料。
由上述可知,本发明的实施方式中的彩色滤光层作为保护其下方走线及薄膜晶体管的保护层,而能够节省材料成本。并藉由透明导电层屏蔽下方走线及薄膜晶体管,而能够避免电容耦合效应造成的漏光问题。另外,透明导电层、绝缘层与像素电极构成一透明电容,而使显示面板具有高开口率。综上所述,本发明确实提供了一种有效节省材料成本且兼具高开口率的主动元件阵列基板。
虽然本发明已以实施方式公开如上,但其并非用以限定本发明,任何本领域的技术人员,在不脱离本发明的精神和范围内,当可作各种的更动与修改,因此本发明的保护范围当视后附的权利要求保护范围所界定者为准。
Claims (10)
1.一种主动元件阵列基板,其特征在于,包含:
一基材;
多条扫描线,位于该基材上;
多条数据线,位于该基材上,与该些扫描线交错以定义该基材的多个次像素区;
至少一薄膜晶体管,电性连接该些扫描线之一条及该些数据线之一条;
一彩色滤光层,覆盖并接触该些扫描线、该些数据线及该薄膜晶体管;
一透明导电层,位于该彩色滤光层上,并藉由该彩色滤光层与该些扫描线、该些数据线及该薄膜晶体管电性隔离;
一绝缘层,覆盖该透明导电层;以及
至少一像素电极,位于该绝缘层上,并覆盖该基材的该些次像素区之一,且该像素电极连接该薄膜晶体管。
2.如权利要求1所述的主动元件阵列基板,其特征在于,该彩色滤光层包含多个彩色滤光图案相互邻接且接触。
3.如权利要求2所述的主动元件阵列基板,其特征在于,至少两个该些彩色滤光图案部分重叠。
4.如权利要求1所述的主动元件阵列基板,其特征在于,该透明导电层提供一共通电压电位。
5.如权利要求1所述的主动元件阵列基板,其特征在于,该透明导电层覆盖并接触该彩色滤光层。
6.如权利要求1所述的主动元件阵列基板,其特征在于,该透明导电层覆盖该基材的该些次像素区及该些数据线。
7.如权利要求6所述的主动元件阵列基板,其特征在于,该透明导电层更包含覆盖该些扫描线及该薄膜晶体管。
8.如权利要求1所述的主动元件阵列基板,其特征在于,该彩色滤光层具有一第一贯孔露出该薄膜晶体管的一部分。
9.如权利要求1所述的主动元件阵列基板,其特征在于,该绝缘层具有一第二贯孔,位于该第一贯孔上方,使该薄膜晶体管的该部分露出。
10.如权利要求1所述的主动元件阵列基板,其特征在于,该像素电极藉由该第一贯孔及该第二贯孔连接该薄膜晶体管。
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