CN104034584A - Young modulus testing structure and method for thin film material - Google Patents
Young modulus testing structure and method for thin film material Download PDFInfo
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- 238000012360 testing method Methods 0.000 title claims abstract description 69
- 239000000463 material Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 title abstract 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 38
- 229920005591 polysilicon Polymers 0.000 claims description 35
- 238000013461 design Methods 0.000 abstract description 5
- 238000004364 calculation method Methods 0.000 abstract description 3
- 238000000605 extraction Methods 0.000 abstract description 3
- 238000005452 bending Methods 0.000 abstract 1
- 238000000691 measurement method Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
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- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
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Abstract
The invention provides a Young modulus testing structure and method for a thin film material. The testing structure is composed of two sets of structures, wherein in the first set of the structure, a cantilever beam (103) manufactured by the thin film material to be detected is composed of an anchor region (103-2) and a long beam (103-1) which are connected; the long beam (103-1) is vertical to a polycrystalline silicon cantilever beam (101); the free end of the long beam (103-1) is located below a left first convex point (101-5) of the polycrystalline silicon cantilever beam (101); a loading driving part of a force is separated from the Young modulus testing structure manufactured by the thin film material to be detected; the bending deflection of the testing structure is controlled through a geometrical parameter design; the force applied to the Young modulus testing structure is extracted by virtue of a principle that the same parts of the two sets of the testing structures have the same stress; the Young modulus of the thin film material to be detected is calculated through the force and the deflection. The testing structure, a measurement method and a calculation method for parameter extraction are very simple and have wide adaptability, and can be used for testing the Young modulus of a conductive or insulating thin film material.
Description
Technical field
The invention provides a kind of test structure of membraneous material Young modulus.Belong to MEMS (micro electro mechanical system) (MEMS) material parameter technical field of measurement and test.
Background technology
Performance and the material parameter of MEMS (micro electro mechanical system) have close relationship.Due to the impact of process, some material parameters will change, and the uncertain factor that these are caused by processing technology will make device design and performance prediction occur uncertain and unsettled situation.Material parameter test purpose is just to measure in real time the micro electro mechanical device material parameter of being manufactured by concrete technology, the stability of technique is monitored, and by parameter feedback to deviser to design revise.Therefore the test of, not leaving processing environment and adopting common apparatus to carry out becomes the necessary means of process monitoring.The physical parameter of material mechanical performance mainly comprises Young modulus, Poisson ratio, unrelieved stress, fracture strength etc.
In micro electro mechanical device structure, use widely membraneous material, especially, in surface micro structure, membraneous material is the material of main part of structured material.The material parameter in situ rest structure of most is all for conductive material, such as doped monocrystalline silicon, doped polycrystalline silicon and metal etc.For insulating material, for example silicon nitride, silicon dioxide and by monocrystalline silicon or polysilicon that silicon dioxide wrapped up, because these materials have insulation characterisitic, be difficult for realizing direct loading and the electro-detection of test signal.
Summary of the invention:
Technical matters: the Young modulus of measuring material need to be known deformation or the crooked amount of deflection that structure stress size and structure stress produce conventionally.The present invention proposes a kind of test structure, for measuring the Young modulus of membraneous material.Test structure is comprised of two groups of structures: wherein one group for measuring basis data, i.e. the size of the power that applies during the certain sag of structure generation; Another group is for measuring under same sag condition, adds the size of the required power applying after Young modulus test cell.Twice applied force subtracted each other, obtain the actual power value being subject on Young modulus test structure, according to this value and sag and can calculate the Young modulus of this membraneous material according to the physical dimension of test structure.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
The structure of actual test Young modulus is a semi-girder of being made by membraneous material to be measured.Utilize quiet electrically driven (operated) polysilicon semi-girder (being designated hereinafter simply as polysilicon semi-girder) to form acting force source.The asymmetric rood beam (being designated hereinafter simply as rood beam) with align structures that employing is made by membraneous material to be measured is as deflection metrology unit, the vertical short beam of this rood beam is as rotating shaft, vertically the He Mao district, two ends of short beam connects, respectively there is a long beam of level on both sides in vertical short beam center, the length of two long beams of level is different, object is that proportion of utilization amplification principle improves deflection metrology precision, at long long beam end, an align structures is set, align structures is comprised of two parts: be vertically connected on the vertical short beam on the long beam of rood beam the right level and be connected to the vertical short beam in anchor district.
End and the shorter long beam end of rood beam of the semi-girder that membraneous material to be measured is made are placed under polysilicon semi-girder end simultaneously, the drop-down polysilicon semi-girder of electrostatic force producing by applying voltage, and the end of semi-girder and the end of the shorter long beam of rood beam that make membraneous material to be measured make move downward simultaneously, when be arranged in rood beam the align structures of long long beam end punctual driving is finished.Now, the size of electrostatic force comprises three part power: drive curved needed power under polysilicon semi-girder; The rood beam needed power that twists; Curved needed power under the semi-girder of being made by membraneous material to be measured.
Remove the semi-girder of making for the membraneous material to be measured of actual measurement Young modulus, only leave polysilicon semi-girder and rood beam and form another group test structure, adopt same static driving method to make polysilicon semi-girder reach same amount of deflection, according to the size of the size of applied voltage and amount of deflection, calculate electrostatic force now.
The electrostatic force of twice measurement is subtracted each other, and the difference of electrostatic force is the semi-girder that drives membraneous material to be measured to make and reaches the needed power of amount of deflection of setting.By the size of this power and amount of deflection and semi-girder physical dimension, can be calculated the Young modulus of membraneous material to be measured.
According to technique scheme, the present invention proposes a kind of test structure of measuring membraneous material Young modulus.This test structure is comprised of two groups of structures, first group of structure comprise quiet electrically driven (operated) polysilicon semi-girder, by membraneous material to be measured, made with the asymmetric rood beam of align structures, the single-ended clamped beam made by membraneous material to be measured; Second group of structure is that first group of structure removed the remaining structure after clamped beam;
The polysilicon semi-girder of described first group of structure is by the first anchor district, slender beam, be formed by connecting from left to right as the wide beam of top electrode, thin short beam, at the lower surface of wide beam, is rectangle bottom electrode, between wide beam and bottom electrode, is air layer; At the lower surface of thin short beam, there are the first salient point, the second salient point respectively as the point of application of clamped beam and rood beam;
Clamped beam in described first group of structure is formed by connecting by the second anchor district and Chang Liang, and clamped beam is vertical with polysilicon semi-girder, under first salient point that is centered close to the polysilicon semi-girder left side of clamped beam;
Rood beam You Simao district in described first group of structure, Wu Mao district, the first vertical short beam, the left side Chang Liang of two different lengths, the long beam in the right and an align structures form; Wherein, the Yu Simao of the two ends branch district of the first vertical short beam, Wu Mao district are connected, the right and left in the first vertical short beam center is provided with the long beam of the long beam in the left side and the right, length from the center of the first vertical short beam to the second salient point is L2, length from the center of vertical short beam to vertical beam B limit is L1, and L1 is greater than L2; The right-hand member of long beam connects an align structures on the right, align structures consists of the second vertical short beam, the 3rd vertical short beam He Liumao district, wherein the second vertical short beam is connected to the right-hand member of the long beam in the right, becomes vertical relation, and the 3rd Yu Liumao district, vertical short beam one end is connected; The aligning limit of align structures is the A limit of the 3rd vertical short beam and the B limit of the second vertical short beam, and there is a small distance △ on A, B limit, and the horizontal axis of the horizontal axis of rood beam and polysilicon semi-girder overlaps.
The test structure of measurement membraneous material Young modulus of the present invention is: utilize first group of structure with second group of structure same section in the identical principle of same test amount of deflection lower stress, extract needed electrostatic force while driving clamped beam center to reach test amount of deflection;
Described clamped beam, the test amount of deflection at its center is controlled by designed distance △, L1, L2, when A, B are on time, the amount of deflection of the second salient point position at clamped beam center
The electrostatic force F1 of described first group of structure under test amount of deflection comprised three parts: drive the crooked needed power of polysilicon semi-girder, rood beam to reverse needed power, the crooked needed power of clamped beam;
The electrostatic force F2 of described second group of structure under test amount of deflection comprised two parts: drive the crooked needed power of polysilicon semi-girder; Rood beam reverses needed power;
F1 is deducted to F2 and be the needed clean power of independent driving clamped beam arrival test amount of deflection.
Beneficial effect: compared with prior art, the present invention has following beneficial effect:
The present invention proposes a kind of test structure of membraneous material Young modulus, can be for the Young modulus test of conductive film material and insulating film material.The present invention separates the load driver part of power and the Young modulus test structure of being made by membraneous material to be measured, by geometric parameter, design the sag of controlling test structure, by two groups of stressed identical principles of test separation structure same section, extract the suffered power of Young modulus test structure, utilize power and amount of deflection to calculate the Young modulus of insulating film material.The method of test structure of the present invention, measuring method and parameter extraction is extremely simple, can be for the test of the Young modulus of the multiple membraneous materials such as conductor/insulation body.
Great advantage of the present invention is that the Young modulus method of testing of membraneous material is simple, and testing apparatus requires low, test process and test parameter value stabilization.Process is synchronizeed with micro electro mechanical device, there is no special processing request.Meet the requirement of on-line testing completely.Computing method only limit to simple mathematical formula.The computing method of test structure of the present invention, measuring method and parameter extraction are extremely simple, and wide adaptability can be for the Young modulus of testing conductive and insulating film material.
Accompanying drawing explanation
Fig. 1 is first group of structure of the present invention.
Fig. 2 is second group of structure of the present invention.
In figure, have: polysilicon semi-girder 101, rood beam 102, clamped beam 103;
The first anchor district 101-1, slender beam 101-2, wide beam 101-3, thin short beam 101-4, the first salient point 101-5, the second salient point 101-6, bottom electrode 101-7;
Long beam 103-1, the second anchor district 103-2;
The long beam 102-1 in the left side, Si Mao district 102-2, Wu Mao district 102-3, the first vertical short beam 102-4, the long beam 102-5 in the right, the second vertical short beam 102-6, Liu Mao district 102-7, the 3rd vertical short beam 102-8.
Embodiment
Below in conjunction with accompanying drawing 1 and Fig. 2, the present invention is done to further description.
The invention provides a kind of test structure of measuring membraneous material Young modulus.Test structure consists of two groups of structures, respectively as depicted in figs. 1 and 2.First group of structure shown in Fig. 1 comprise quiet electrically driven (operated) polysilicon semi-girder 101, by membraneous material to be measured, made with the asymmetric rood beam 102 of align structures, the two-end fixed beam 103 of being made by membraneous material to be measured; Second group of test structure as shown in Figure 2, comprises polysilicon semi-girder 101 and rood beam 102.Second group of structure is that first group of structure removed the remaining structure after clamped beam 103.
The polysilicon semi-girder 101 of described first group of structure is by the first anchor district 101-1, slender beam 101-2, be formed by connecting from left to right as the wide beam 101-3 of top electrode, thin short beam 101-4, lower surface at wide beam 101-3 is rectangle bottom electrode 101-7, between wide beam 101-3 and bottom electrode 101-7, is air layer; At the lower surface of thin short beam 101-4, there are the first salient point 101-5, the second salient point 101-6 respectively as the point of application of clamped beam 103 and rood beam 102;
Clamped beam 103 in described first group of structure is formed by connecting by the second anchor district 103-2 and long beam 103-1, and clamped beam 103 is vertical with polysilicon semi-girder 101, under the first salient point 101-5 that is centered close to polysilicon semi-girder 101 left sides of clamped beam 103;
The long beam 102-1 in the left side, the long beam 102-5 in the right of rood beam 102 You Simao district 102-2, the Wu Mao district 102-3 in described first group of structure, the first vertical short beam 102-4, two different lengths and an align structures form; Wherein, the Yu Simao of the two ends branch district 102-2 of the first vertical short beam 102-4, Wu Mao district 102-3 are connected, the right and left in the first vertical short beam 102-4 center is provided with the long beam 102-1 in the left side and the long beam 102-5 in the right, length from the center of the first vertical short beam 102-4 to the second salient point 101-6 is L2, length from the center of vertical short beam 102-4 to vertical beam 102-6B limit is L1, and L1 is greater than L2; The right-hand member of long beam 102-5 connects an align structures on the right, align structures consists of the second vertical short beam 102-6, the 3rd vertical short beam 102-8 He Liumao district 102-7, wherein the second vertical short beam 102-6 is connected to the right-hand member of the long beam 102-5 in the right, become vertical relation, the 3rd vertical short beam 102-8 one end Yu Liumao district 102-7 is connected; The aligning limit of align structures is the A limit of the 3rd vertical short beam 102-8 and the B limit of the second vertical short beam 102-6, and there is a small distance △ on A, B limit, and the horizontal axis of the horizontal axis of rood beam 102 and polysilicon semi-girder 101 overlaps.
The method of testing of membraneous material unrelieved stress test structure is: utilize first group of structure with second group of structure same section in the identical principle of same test amount of deflection lower stress, extract needed electrostatic force while driving clamped beam 103 centers to reach test amount of deflection;
Described clamped beam 103, the test amount of deflection at its center is controlled by designed distance △, L1, L2, when A, B are on time, the amount of deflection of the second salient point 101-6 position at clamped beam 103 centers
The electrostatic force F1 of described first group of structure under test amount of deflection comprised three parts: drive polysilicon semi-girder 101 crooked needed power, rood beam 102 to reverse needed power, the crooked needed power of clamped beam 103;
The electrostatic force F2 of described second group of structure under test amount of deflection comprised two parts: drive polysilicon semi-girder 101 crooked needed power; Rood beam 102 reverses needed power;
F1 is deducted to F2 and be the needed clean power of independent driving clamped beam 103 arrival test amount of deflection.
Described second group of structure is in described first group of structure, to have removed clamped beam 103 remaining structure afterwards, and its all cellular constructions are all identical with first group of structural correspondence unit with size.
The test philosophy of membraneous material unrelieved stress is as follows:
First first group of structure tested, between the upper bottom crown wide beam 101-3 of polysilicon semi-girder 101 and 101-7, apply the voltage increasing gradually, the electrostatic force that this voltage produces drives the right-hand member of polysilicon semi-girder 101 to be bent downwardly, simultaneously by the first salient point 101-5, the left end of the second salient point 101-6 compressing clamped beam 103 center and rood beam 102 moves down, and make rood beam 102 take the first vertical short beam 102-4 as axle torsion, cause the long beam 102-5 in the right to be upturned, the projected length of the long beam 102-5 in the right shortens, A limit is approached on B limit gradually, when B limit and A limit are to stopping on time increasing voltage recording voltage value V1.The test amount of deflection that need to reach in the time of can controlling simply test by design load △, L1, L2.When A, B are on time, clamped beam 103 centers in the amount of deflection (test amount of deflection) of the second salient point 101-6 position are:
By amount of deflection, can calculate electrostatic force F1 now with the magnitude of voltage V1 applying.F1 has comprised three parts: the crooked needed power of polysilicon semi-girder 101; Rood beam 102 reverses needed power; The crooked needed power of clamped beam 103.
Next second group of structure tested.Similarly, by upper bottom crown wide beam 101-3 and bottom electrode 101-7, apply the voltage increasing gradually, the right-hand member of polysilicon semi-girder 101 is bent downwardly, left end by the second salient point 101-6 compressing rood beam 102 moves down simultaneously, and make rood beam 102 take the first vertical short beam 102-4 as axle torsion, the long beam 102-5 in the right is upturned, when B limit and A limit are to stopping on time increasing voltage recording voltage value V2.By applied magnitude of voltage V2 and displacement (amount of deflection), can calculate electrostatic force F2 now.F2 has comprised two parts: drive the crooked needed power of beam 101; Rood beam 102 reverses needed power.
F1 deducts F2 and is the needed clean power of independent driving clamped beam 103 arrival setting amount of deflection.By the value of this power and the amount of deflection at clamped beam 103 centers, can be calculated the unrelieved stress of membraneous material.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (2)
1. a membraneous material Young modulus test structure, it is characterized in that this test structure is comprised of two groups of structures, first group of structure comprise quiet electrically driven (operated) polysilicon semi-girder (101), by membraneous material to be measured, made with the asymmetric rood beam (102) of align structures, the single-ended clamped beam (103) of being made by membraneous material to be measured; Second group of structure is that first group of structure removed the remaining structure after clamped beam (103);
The polysilicon semi-girder (101) of described first group of structure is by the first anchor district (101-1), slender beam (101-2), be formed by connecting from left to right as the wide beam (101-3) of top electrode, thin short beam (101-4), lower surface at wide beam (101-3) is rectangle bottom electrode (101-7), between wide beam (101-3) and bottom electrode (101-7), is air layer; At the lower surface of thin short beam (101-4), there are the first salient point (101-5), the second salient point (101-6) respectively as the point of application of clamped beam (103) and rood beam (102);
The semi-girder of being made by membraneous material to be measured (103) You Mao district (103-2) He Changliang (103-1) in described first group of structure is formed by connecting, long beam (103-1) is vertical with polysilicon semi-girder (101), and the free end of long beam (103-1) is positioned under the left side first salient point (101-5) of polysilicon semi-girder (101);
The left side Chang Liang (102-1) of rood beam (102) the You Simao district (102-2) in described first group of structure, Wu Mao district (102-3), the first vertical short beam (102-4), two different lengths, the long beam in the right (102-5) and an align structures form; Wherein, the two ends of the first vertical short beam (102-4) respectively Yu Simao district (102-2), Wu Mao district (102-3) are connected, the right and left in the first vertical short beam (102-4) center is provided with the long beam of left side Chang Liang (102-1) and the right (102-5), length from the center of the first vertical short beam (102-4) to the second salient point (101-6) is L2, length from the center of vertical short beam (102-4) to vertical beam (102-6) B limit is L1, and L1 is greater than L2; The right-hand member of long beam (102-5) connects an align structures on the right, align structures consists of the second vertical short beam (102-6), the 3rd vertical short beam (102-8) He Liumao district (102-7), wherein the second vertical short beam (102-6) is connected to the right-hand member of the long beam in the right (102-5), become vertical relation, the 3rd Yu Liumao district, vertical short beam (102-8) one end (102-7) is connected; The aligning limit of align structures is the A limit of the 3rd vertical short beam (102-8) and the B limit of the second vertical short beam (102-6), there is a small distance △ on A, B limit, and the horizontal axis of the horizontal axis of rood beam (102) and polysilicon semi-girder (101) overlaps.
2. the method for testing of a membraneous material Young modulus test structure as claimed in claim 1, it is characterized in that, utilize first group of structure with second group of structure same section in the identical principle of same test amount of deflection lower stress, extract needed electrostatic force while driving clamped beam (103) center to reach test amount of deflection;
Described clamped beam (103), the test amount of deflection at its center is controlled by designed distance △, L1, L2, when A, B are on time, the amount of deflection of the second salient point (101-6) position at clamped beam (103) center
The electrostatic force F1 of described first group of structure under test amount of deflection comprised three parts: drive the crooked needed power of polysilicon semi-girder (101), rood beam (102) to reverse needed power, the crooked needed power of clamped beam (103);
The electrostatic force F2 of described second group of structure under test amount of deflection comprised two parts: drive the crooked needed power of polysilicon semi-girder (101); Rood beam (102) reverses needed power;
F1 is deducted to F2 and be the needed clean power of independent driving clamped beam (103) arrival test amount of deflection.
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| CN104568585A (en) * | 2015-01-08 | 2015-04-29 | 东南大学 | Metal film material Young modulus test structure |
| CN104568586A (en) * | 2015-01-08 | 2015-04-29 | 东南大学 | Structure for testing breaking strength of film material |
| CN104849138A (en) * | 2015-03-23 | 2015-08-19 | 同济大学 | Apparatus for measuring film compression modulus |
| CN107346355A (en) * | 2017-06-21 | 2017-11-14 | 中国电子产品可靠性与环境试验研究所 | The stepped micro- fixed beam structure detection method of electrostatic drive and system |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104568585A (en) * | 2015-01-08 | 2015-04-29 | 东南大学 | Metal film material Young modulus test structure |
| CN104568586A (en) * | 2015-01-08 | 2015-04-29 | 东南大学 | Structure for testing breaking strength of film material |
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| CN107346355B (en) * | 2017-06-21 | 2020-10-30 | 中国电子产品可靠性与环境试验研究所 | Electrostatic driving step type micro-clamped beam structure detection method and system |
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| CN104034584B (en) | 2017-06-16 |
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