CN104034575B - Thin film silicon material Poisson ratio test structure and method in dielectric substrate - Google Patents
Thin film silicon material Poisson ratio test structure and method in dielectric substrate Download PDFInfo
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- CN104034575B CN104034575B CN201410243664.0A CN201410243664A CN104034575B CN 104034575 B CN104034575 B CN 104034575B CN 201410243664 A CN201410243664 A CN 201410243664A CN 104034575 B CN104034575 B CN 104034575B
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Abstract
The present invention is a kind of test structure and method of measuring thin film silicon material Poisson ratio in dielectric substrate.This test structure is by two groups of Structure composing, and wherein first group of structure is made up of a polysilicon semi-girder (101), a thin film silicon rood beam (103) and a backing plate made by thin film silicon (102); Second group of structure is made up of the backing plate of a polysilicon semi-girder and a thin film silicon making; The unit of actual measurement thin film silicon Poisson ratio is thin film silicon rood beam, and the difference of two groups of structures is only whether comprise thin film silicon rood beam, and in two groups of structures, other corresponding unit structures are identical with physical dimension.Apply electrostatic force make polysilicon semi-girder under curved and and then press down thin film silicon rood beam and pad contact substrate.Go out driving thin film silicon rood beam separately by the Test extraction of two groups of test structures and be torqued into the power required for test angle, the Poisson ratio of thin film silicon material in dielectric substrate can be calculated by power, test angle, Young modulus and physical dimension.
Description
Technical field
The invention provides the test structure of thin film silicon material Poisson ratio in a kind of dielectric substrate.Belong to MEMS (micro electro mechanical system) (MEMS) material parameter technical field of measurement and test.
Background technology
Performance and the material parameter of micro electro mechanical device have close relationship, due to the impact of process, some material parameters will change, these uncertain factors caused by processing technology, occur uncertain and unstable situation by making device layout and performance prediction.Material parameter test purpose is just to measure the micro electro mechanical device material parameter manufactured by concrete technology in real time, monitors the stability of technique, and by parameter feedback to deviser, to revise design.Therefore, processing environment is not left and the test adopting common apparatus to carry out becomes the necessary means of process monitoring.The physical parameter of material mechanical performance mainly comprises Young modulus, Poisson ratio, unrelieved stress, fracture strength etc.
In MEMS technology field, the silicon fiml (a kind of SOI material) in dielectric substrate is a kind of conventional backing material, and being formed by stacking primarily of trilaminate material, is large substrate from bottom to top, insulation course (being generally silicon dioxide), silicon film.This kind of SOI material adopts two class methods manufactures usually: note oxygen and bonding.The silicon fiml that note oxygen SOI material is formed is thinner, and be approximately hundreds of nanometer, the silicon fiml on the SOI material that bonding is formed relatively is noted oxide structure and wanted thicker, several microns to tens microns.Insulation course in SOI material mainly silicon dioxide, the silicon dioxide wherein noting oxygen formation only has tens nanometers usually, and the silicon dioxide that bonding forms SOI is then relatively thicker, and thickness range is also larger.These silicon dioxide Chang Zuowei makes the sacrifice layer of MEMS, and namely the part of this layer of silicon dioxide under structure is corroded the most at last, and like this, the structure made by the silicon fiml of upper strata can be done from face or in-plane moving.No matter be note oxygen technique or bonding technology, all form stress by superincumbent silicon fiml.Silicon fiml in dielectric substrate is monocrystalline silicon thin film, and the mechanics parameter of its membraneous material is relevant with crystal orientation.Adopt the normally off-plane movement form of the MEMS made by thin film silicon in dielectric substrate, and the normally in-plane moving form of the MEMS made by thick film silicon in dielectric substrate.
Current most of micro electronmechanical material parameter in situ rest structure mainly measures the membraneous material made by micromechanical surface processing technology, as each layer polysilicon, metal level etc.Along with the silicon fiml material in dielectric substrate is more and more applied in MEMS processing, the on-line measurement demand for the mechanics parameter such as Young modulus, Poisson ratio, unrelieved stress, fracture strength of silicon fiml material in dielectric substrate is increasing.
The invention provides a kind of test structure measuring thin film silicon material Poisson ratio in dielectric substrate.Test structure is by two groups of Structure composing.Wherein first group is made up of a polysilicon semi-girder, thin film silicon rood beam, the backing plate made by thin film silicon; Second group is made up of a polysilicon semi-girder and a backing plate made by thin film silicon.The unit of actual measurement thin film silicon Young modulus is thin film silicon rood beam, and the difference of two groups of structures is only whether comprise thin film silicon rood beam, and in two groups of structures, other corresponding unit structures are identical with physical dimension.Apply electrostatic force make polysilicon semi-girder under curved and and then press down thin film silicon rood beam and pad contact substrate.Go out driving thin film silicon rood beam separately by the Test extraction of two groups of test structures and be torqued into the power required for test angle, the Poisson ratio of thin film silicon material in dielectric substrate can be calculated by power, test angle, Young modulus and physical dimension.The method of test structure of the present invention, measuring method and parameter extraction is extremely simple.
Summary of the invention:
Technical matters: the Poisson ratio measuring material needs the angle of deformation or the torsion knowing that structure stress size and structure stress produce usually.The present invention proposes a kind of test structure and the method for measuring thin film silicon material Poisson ratio in dielectric substrate, for measuring the Poisson ratio of thin film silicon material in dielectric substrate.Utilize two groups of test cells to extract the size of the power suffered by Poisson ratio measuring unit, utilize the thickness of silicon dioxide layer in SOI material that the angle of the stressed torsion of Poisson ratio measuring unit is set.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
Test structure is made up of two groups of unit: wherein one group for measuring the size of exerted forces when the structure containing thin film silicon Poisson ratio measuring unit produces certain upper and lower displacement; Another group is used for measuring under same displacement condition, the size of the required power applied after removing the Poisson ratio measuring unit of thin film silicon.Twice applied force is subtracted each other, obtain the actual force value be subject on the Poisson ratio measuring unit of thin film silicon, in conjunction with geometric parameter, the physical parameter of test structure, the Poisson ratio of thin film silicon material in this dielectric substrate can be calculated according to the windup-degree of this value and design.On the other hand, the MEMS structure made due to SOI material is easy to make the anchor district of structure to be subject to undercutting when sacrifice layer corrosion, and the intensity in Shi Mao district is affected, and must reinforce it.
The unit of the thin film silicon material Poisson ratio in actual test dielectric substrate is a rood beam made by this thin film silicon material; The acting force source driving thin film silicon rood beam to twist is one and utilizes quiet electrically driven (operated) polysilicon semi-girder; Windup-degree is determined by silicon dioxide layer thickness in SOI, also namely terminates to test during large substrate when thin film silicon rood beam is torqued into end thereof contacts.
According to technique scheme, the present invention proposes a kind of test structure measuring thin film silicon material Poisson ratio in dielectric substrate.This test structure is by two groups of Structure composing, and wherein first group of structure is made up of a polysilicon semi-girder, a thin film silicon rood beam and a backing plate made by thin film silicon; Second group of structure is made up of the backing plate of a polysilicon semi-girder and a thin film silicon making;
The polysilicon semi-girder of described first group of test structure is made up of the first anchor district, slender beam, the wide beam as top electrode, thin short beam and bottom electrode, from left to right, first anchor district, slender beam, wide beam are connected successively with thin short beam, bottom electrode is positioned under the wide beam as top electrode, it is air layer between wide beam and bottom electrode, the first salient point, the second salient point is provided with, respectively as the point of application for thin film silicon rood beam and backing plate in the bottom of thin short beam;
The thin film silicon rood beam made by thin film silicon material in dielectric substrate in described first group of structure comprises the second anchor district, the 3rd anchor district, is formed by the horizontal short beam as torsion beam of this Liang Gemao district connection and upper vertical Chang Liang, lower vertical long beam, upper vertical Chang Liang, lower vertical long beam are vertical with polysilicon semi-girder, and the upper free end of upper vertical long beam is arranged under the left side first salient point of the thin short beam of polysilicon semi-girder;
Backing plate in described first group of test structure comprise rectangular slab, two support rectangular slabs the first folded beam, the second folded beam, connect the first folded beam, the 4th anchor district of the second folded beam, the 5th anchor district respectively; Backing material is identical with thin film silicon rood beam, all adopts the thin film silicon in dielectric substrate to make, under the right second salient point being centrally located at thin short beam in polysilicon semi-girder of rectangular slab;
The geometric configuration of the polysilicon semi-girder in described second group of test structure and backing plate, size and the polysilicon semi-girder of relative position all with first group are identical with backing plate.
The second described anchor district, the 3rd anchor district, the 4th anchor district, the 5th anchor district all adopt ruggedized construction, namely on these anchor districts, one deck lapping is provided with, lapping covers whole anchor district and extends out to silicon dioxide layer region, and the part that lapping figure is greater than anchor district is grown directly upon on the silicon dioxide layer in SOI material.
The method of testing of the thin film silicon material Poisson ratio test structure in dielectric substrate of the present invention is:
Utilize first group of structure and second group of structure same section in the identical principle of same test displacement lower stress, extract the electrostatic force driving rood beam that in dielectric substrate, thin film silicon material makes required when horizontal short beam is torqued into test angle,
The test angle that the rood beam made by thin film silicon in dielectric substrate reverses around horizontal short beam is:
in formula, Δ is the thickness of silicon dioxide layer, and L is the length of rood beam center to the first salient point;
The electrostatic force F1 of described first group of structure under test displacement contains three parts: drive polysilicon semi-girder to bend required power; Press down the power required for backing plate; Power required for the rood beam made by thin film silicon material to be measured reverses,
The electrostatic force F2 of described second group of structure under test displacement includes two parts: drive polysilicon semi-girder to bend required power; Press down the power required for backing plate,
F1 deducts F2 and is and drives separately the rood beam made by thin film silicon material in dielectric substrate to be torqued into resulting net force required for test angle.
The geometric configuration of the polysilicon semi-girder in described second group of test structure and backing plate, size and relative position are identical with backing plate with the polysilicon semi-girder of first group.
Beneficial effect: compared with prior art, the present invention has following beneficial effect:
Great advantage of the present invention is that the thin film silicon material poisson ratio test method in dielectric substrate is simple, and testing apparatus requires low, test process and test parameter value stabilization.Process is synchronous with micro electro mechanical device, does not have special processing request.Meet the requirement of on-line testing completely.Computing method are only limitted to simple mathematical formula.The computing method of test structure of the present invention, measuring method and parameter extraction are extremely simple, wide adaptability.
Accompanying drawing explanation
Fig. 1 is first group of structure of the present invention.
Fig. 2 is second group of structure of the present invention.
Fig. 3 is that thin film silicon of the present invention reinforces anchor plot structure.
Have in figure: polysilicon semi-girder 101, first anchor district 101-1, slender beam 101-2, wide beam 101-3, thin short beam 101-4, the first salient point 101-5, the second salient point 101-6, bottom electrode 101-7;
Backing plate 102, rectangular slab 102-1, the first folded beam 102-2, the second folded beam 102-3, the 4th anchor district 102-4, the 5th anchor district 102-5;
Thin film silicon rood beam 103, upper vertical long beam 103-1, the second anchor district 103-2, the 3rd anchor district 103-3, horizontal short beam 103-4, lower vertical long beam 103-5;
Large substrate 200, silicon dioxide layer 201, membrane silicon layer 202, lapping 203.
Embodiment
Below in conjunction with accompanying drawing 1, Fig. 2 and Fig. 3, further description is done to the present invention.
The invention provides a kind of test structure measuring thin film silicon material Poisson ratio in dielectric substrate.Test structure is by two groups of Structure composing.Wherein first group of structure as shown in Figure 1, and this group structure is made up of a polysilicon semi-girder 101, thin film silicon rood beam 103, backing plate made by thin film silicon 102; Second group as shown in Figure 2, is made up of a polysilicon semi-girder 101 and a backing plate made by thin film silicon 102.It is identical with physical dimension that the difference of these two groups of structures is only whether to comprise other corresponding unit structures in thin film silicon rood beam 103, two groups of structures.
The polysilicon semi-girder 101 of described first group of test structure is by the first anchor district 101-1, slender beam 101-2, as the wide beam 101-3 of top electrode, thin short beam 101-4 and bottom electrode 101-7 forms, from left to right, first anchor district 101-1, slender beam 101-2, wide beam 101-3 is connected successively with thin short beam 101-4, bottom electrode 101-7 is positioned under the wide beam 101-3 as top electrode, air layer between wide beam 101-3 and bottom electrode 101-7, the first salient point 101-5 is provided with in the bottom of thin short beam 101-4, second salient point 101-6, respectively as the point of application for thin film silicon rood beam 103 and backing plate 102,
The thin film silicon rood beam 103 made by thin film silicon material in dielectric substrate in described first group of structure comprises the second anchor district 103-2, the 3rd anchor district 103-3, is formed by the horizontal short beam 103-4 as torsion beam of this Liang Gemao district connection and upper vertical long beam 103-1, lower vertical long beam 103-5, upper vertical long beam 103-1, lower vertical long beam 103-5 are vertical with polysilicon semi-girder 101, and the upper free end of upper vertical long beam 103-1 is arranged under the left side first salient point 101-5 of the thin short beam 101-4 of polysilicon semi-girder 101;
Backing plate 102 in described first group of test structure comprises rectangular slab 102-1, two the first folded beam 102-2, the second folded beam 102-3 supporting rectangular slab 102-1, connects the first folded beam 102-2, the 4th anchor district 102-4 of the second folded beam 102-3, the 5th anchor district 102-5 respectively; Backing plate 102 material is identical with thin film silicon rood beam 103, all adopts the thin film silicon in dielectric substrate to make, under the right second salient point 101-6 being centrally located at thin short beam 101-4 in polysilicon semi-girder 101 of rectangular slab 102-1;
The geometric configuration of the polysilicon semi-girder 101 in described second group of test structure and backing plate 102, size and the polysilicon semi-girder 101 of relative position all with first group are identical with backing plate 102.
In dielectric substrate, the principle of thin film silicon material Poisson ratio test is as follows:
First first group of structure is tested, the voltage increased gradually is applied between the upper bottom crown of polysilicon semi-girder 101, the right-hand member of the static-electronic driving polysilicon semi-girder 101 that this voltage produces is bent downwardly, force thin film silicon rood beam 103 with horizontal short beam 103-4 for axle reverses by the first salient point 101-5 simultaneously, until the large substrate 200 of upper-end contact of upper vertical long beam 103-1, meanwhile, the large substrate 200 of contact is moved down by the rectangular slab 102-1 of the second salient point 101-6 compressing backing plate 102.Now the windup-degree α of thin film silicon rood beam 103 can be calculated by the physical dimension of the thickness of silicon dioxide layer 201 and thin film silicon rood beam 103,
in formula, Δ is the thickness of silicon dioxide layer 201, and L is the length of rood beam center to the first salient point 101-5.Electrostatic force F1 now can be calculated by the thickness of silicon dioxide layer 201 and the magnitude of voltage V1 that applies.F1 includes three parts: the bending required power of polysilicon semi-girder 101; Press down rectangular slab 102-1 in backing plate 102 and move required power; Thin film silicon rood beam 103 reverses required power.
Next second group of structure is tested.Similarly, the voltage increased gradually is applied by upper bottom crown, the right-hand member of polysilicon semi-girder 101 is bent downwardly, moved down by the rectangular slab 102-1 of the second salient point 101-6 compressing backing plate 102 simultaneously, stop when rectangular slab 102-1 contacts large substrate 200 increasing voltage and recording voltage value V2.Electrostatic force F2 now can be calculated by applied magnitude of voltage V2 and displacement.F2 includes two parts: the bending required power of polysilicon semi-girder 101; Press down rectangular slab 102-1 in backing plate 102 and move required power.
F1 deducts F2 and is and drives separately thin film silicon rood beam 103 to arrive resulting net force F3 required for set angle.The Poisson ratio of thin film silicon material can be calculated by the value of this power, test angle and the physical dimension of thin film silicon rood beam 103, the Young modulus of thin film silicon.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (3)
1. measure the test structure of thin film silicon material Poisson ratio in dielectric substrate for one kind, it is characterized in that this test structure is by two groups of Structure composing, wherein first group of structure is made up of a polysilicon semi-girder (101), a thin film silicon rood beam (103) and a backing plate made by thin film silicon (102); Second group of structure is made up of the backing plate (102) of a polysilicon semi-girder (101) and a thin film silicon making;
The polysilicon semi-girder (101) of described first group of structure is by the first anchor district (101-1), slender beam (101-2), as the wide beam (101-3) of top electrode, thin short beam (101-4) and bottom electrode (101-7) composition, from left to right, first anchor district (101-1), slender beam (101-2), wide beam (101-3) is connected successively with thin short beam (101-4), bottom electrode (101-7) is positioned under the wide beam (101-3) as top electrode, air layer between wide beam (101-3) and bottom electrode (101-7), the first salient point (101-5) is provided with in the bottom of thin short beam (101-4), second salient point (101-6), respectively as the point of application for thin film silicon rood beam (103) and backing plate (102),
The thin film silicon rood beam (103) made by thin film silicon material in dielectric substrate in described first group of structure comprises the second anchor district (103-2), 3rd anchor district (103-3), the horizontal short beam (103-4) as torsion beam connected by this Liang Gemao district and upper vertical long beam (103-1), lower vertical long beam (103-5) composition, upper vertical long beam (103-1), lower vertical long beam (103-5) is vertical with polysilicon semi-girder (101), the upper free end of upper vertical long beam (103-1) is arranged under the left side first salient point (101-5) of the thin short beam (101-4) of polysilicon semi-girder (101),
Backing plate (102) in described first group of structure comprises rectangular slab (102-1), supports the first folded beam (102-2), second folded beam (102-3) of rectangular slab (102-1), connects the 4th anchor district (102-4) of the first folded beam (102-2), connects the 5th anchor district (102-5) of the second folded beam (102-3); Backing plate (102) material is identical with thin film silicon rood beam (103), the thin film silicon in dielectric substrate is all adopted to make, under the right second salient point (101-6) being centrally located at thin short beam (101-4) in polysilicon semi-girder (101) of rectangular slab (102-1);
The geometric configuration of the polysilicon semi-girder (101) in described second group of structure and backing plate (102), size and the polysilicon semi-girder (101) of relative position all with first group are identical with backing plate (102).
2. the thin film silicon material Poisson ratio test structure in dielectric substrate according to claim 1, it is characterized in that the second described anchor district (103-2), 3rd anchor district (103-3), 4th anchor district (102-4), 5th anchor district (102-5) all adopts ruggedized construction, namely on these anchor districts, one deck lapping (203) is provided with, lapping (203) covers whole anchor district and extends out to silicon dioxide layer (201) region, the part that lapping (203) figure is greater than anchor district is grown directly upon on the silicon dioxide layer (201) in SOI material.
3. a method of testing for the thin film silicon material Poisson ratio test structure in dielectric substrate as claimed in claim 1, is characterized in that:
Utilize first group of structure and second group of structure same section in the identical principle of same test displacement lower stress, extract the electrostatic force driving the rood beam (103) of thin film silicon material making in dielectric substrate required when horizontal short beam (103-4) is torqued into test angle
The test angle that the rood beam (103) made by thin film silicon in dielectric substrate reverses around horizontal short beam (103-4) is:
in formula, Δ is the thickness of silicon dioxide layer (201), and L is the length of rood beam center to the first salient point (101-5);
The electrostatic force F1 of described first group of structure under test displacement contains three parts: drive the bending required power of polysilicon semi-girder (101); Press down the power required for backing plate (102); Power required for the rood beam (103) made by thin film silicon material to be measured reverses,
The electrostatic force F2 of described second group of structure under test displacement includes two parts: drive the bending required power of polysilicon semi-girder (101); Press down the power required for backing plate (102),
F1 deducts F2 and is and drives separately the rood beam (103) made by thin film silicon material in dielectric substrate to be torqued into resulting net force required for test angle.
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| CN111044181B (en) * | 2019-12-19 | 2021-10-26 | 华南理工大学 | Gradient zero Poisson ratio structure capacitive flexible touch sensor and preparation method thereof |
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| CN102589965B (en) * | 2012-01-10 | 2014-01-01 | 东南大学 | On-line test structure for polycrystalline silicon Poisson ratio |
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