CN202404055U - Polycrystalline silicon fracture strength on-line testing structure - Google Patents
Polycrystalline silicon fracture strength on-line testing structure Download PDFInfo
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- CN202404055U CN202404055U CN2012200104577U CN201220010457U CN202404055U CN 202404055 U CN202404055 U CN 202404055U CN 2012200104577 U CN2012200104577 U CN 2012200104577U CN 201220010457 U CN201220010457 U CN 201220010457U CN 202404055 U CN202404055 U CN 202404055U
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 173
- 238000012360 testing method Methods 0.000 title claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229920005591 polysilicon Polymers 0.000 claims description 77
- 238000000034 method Methods 0.000 abstract description 15
- 238000004364 calculation method Methods 0.000 abstract description 11
- 230000005284 excitation Effects 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 238000006467 substitution reaction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 231100000716 Acceptable daily intake Toxicity 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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Abstract
The utility model discloses a polycrystalline silicon fracture strength on-line testing structure, which includes a first testing unit, a second testing unit, a third testing unit and an insulating substrate, wherein the first, the second and the third testing units are arranged on the insulating substrate. The simple current excitation is performed for the testing structure and related resistance is measured, the substitution of the related resistance values obtained through measurement is performed in a calculation formula, and the thermal expansion coefficient is eliminated through adopting a plurality of calculation equations, and finally, the polycrystalline silicon fracture strength can be obtained. The polycrystalline silicon fracture strength on-line testing structure provided by the utility model has a simple testing process, is low in requirements for testing equipment, has no special processing requirement as the testing structure is processed synchronously with the MEMS of the micro-electro-mechanical device, meets the requirements for on-line testing, adopts the calculation method limit to simple math equations only, has stable testing and computational processes, and is reliable in output results.
Description
Technical Field
The utility model relates to a micro electro mechanical system material parameter on-line testing technology, in particular to a polysilicon breaking strength on-line testing structure.
Background
The performance of the micro-electromechanical device MEMS has a close relationship with the physical parameters of the material, and the physical parameters of the material for manufacturing the micro-electromechanical device are related with the manufacturing process, namely, the manufacturing process is different, and the physical parameters of the material are also different.
Polysilicon is an important and fundamental material for the fabrication of microelectromechanical device structures, typically by Chemical Vapor Deposition (CVD) methods. The polysilicon breaking strength is an important physical parameter of the material, and the polysilicon breaking strength can be tested off line by a special instrument through manufacturing a test sample, but the real-time property is lost. Manufacturers of micro-electro-mechanical products want to be able to perform on-line testing in a process line by using a general-purpose measuring instrument, and reflect the process control level in time, so that on-line testing becomes a necessary means for process monitoring.
The on-line test structure and the calculation and extraction method of the material physical parameters are basic elements for realizing on-line test, the test completely adopts the methods of electrical excitation and electrical measurement, and the physical parameters of the material can be obtained through the electrical quantity values and the targeted calculation method. The tensile force generated by thermal expansion to stretch the material to break is a common method for testing the breaking strength of polysilicon. However, the quantitative calculation of the thermal expansion amount of the material requires to know the thermal expansion coefficient of the material, and the specific value of the thermal expansion coefficient is also related to the manufacturing process, so that the thermal expansion coefficient of the material needs to be tested on line firstly, but most of the existing online measurement methods of the thermal expansion coefficient have the problems of low precision and poor stability.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: an object of the utility model is to overcome prior art not enough, provide an online test structure of polycrystalline silicon rupture strength, carry out simple electric current excitation and measure relevant resistance to test structure, substitute the formula of calculation with the relevant resistance value that obtains measuring, utilize a plurality of calculation equations to eliminate the coefficient of thermal expansion, finally obtain the rupture strength of polycrystalline silicon.
The technical scheme is as follows: the utility model is realized by the following technical proposal, the testing structure of the utility model comprises a first testing unit, a second testing unit, a third testing unit and an insulating substrate, wherein the first testing unit, the second testing unit and the third testing unit are arranged on the insulating substrate;
the first test cell includes a first pair of anchor regions, a first independent anchor region, a first polysilicon contact block, a first polysilicon pointer, and a first polysilicon expansion strip, wherein: the first pair of fixed anchor areas and the first independent anchor area are respectively fixed on the insulating substrate, two ends of the first polycrystalline silicon expansion strip are respectively fixed on the first pair of fixed anchor areas, one end of the first polycrystalline silicon pointer is fixed in the middle of the first polycrystalline silicon expansion strip, the other end of the first polycrystalline silicon pointer is suspended, the first polycrystalline silicon contact block is positioned at the suspended end of the first polycrystalline silicon pointer and is fixed on the first independent anchor area, and the first polycrystalline silicon contact block, the first polycrystalline silicon pointer and the first polycrystalline silicon expansion strip are respectively suspended;
the second test unit comprises a second pair of fixed anchor regions, a second independent anchor region, a second polycrystalline silicon contact block, a second polycrystalline silicon pointer and a second polycrystalline silicon expansion strip, wherein: the second pair of fixed anchor areas and the second independent anchor area are respectively fixed on the insulating substrate, two ends of a second polycrystalline silicon expansion strip are respectively fixed on the second pair of fixed anchor areas, one end of a second polycrystalline silicon pointer is fixed in the middle of the second polycrystalline silicon expansion strip, the other end of the second polycrystalline silicon pointer is suspended, a second polycrystalline silicon contact block is positioned at the suspended end of the second polycrystalline silicon pointer and is fixed on the second independent anchor area, the second polycrystalline silicon contact block, the second polycrystalline silicon pointer and the second polycrystalline silicon expansion strip are respectively suspended, and the first polycrystalline silicon pointer is shorter than the second polycrystalline silicon pointer;
the third test unit comprises a third pair of fixed anchor areas, a third independent anchor area, a polycrystalline silicon driving beam and a polycrystalline silicon fracture strip; wherein: the third pair of fixed anchor areas and the third independent anchor area are respectively fixed on the insulating substrate, two ends of the polycrystalline silicon driving beam are respectively fixed on the third pair of fixed anchor areas, one end of the polycrystalline silicon fracture strip is fixed in the middle of the polycrystalline silicon driving beam, and the other end of the polycrystalline silicon fracture strip is fixed in the third independent anchor area, and the polycrystalline silicon driving beam and the polycrystalline silicon fracture strip are respectively suspended.
The first polycrystalline silicon expansion strip comprises a first left branch strip and a first right branch strip, one end of the first left branch strip and one end of the first right branch strip are fixed on the first pair of fixing anchor regions respectively, the other ends of the first left branch strip and the first right branch strip are in lap joint, the first right branch strip is located on the first left branch strip, first long and narrow parts are arranged on the first left branch strip and the first right branch strip respectively, a first polycrystalline silicon pointer is fixed at the lap joint of the first left branch strip and the first right branch strip, and a first polycrystalline silicon contact block is located on the left side of the first polycrystalline silicon pointer.
The second polycrystalline silicon expansion strip comprises a second left branch strip and a second right branch strip, one end of the second left branch strip and one end of the second right branch strip are respectively fixed on the second pair of fixed anchor regions, the other ends of the second left branch strip and the second right branch strip are mutually lapped, the second right branch strip is positioned on the second left branch strip, second long and narrow parts are respectively arranged on the second left branch strip and the second right branch strip, the second polycrystalline silicon pointer is fixed at the lapping position of the second left branch strip and the second right branch strip, and the second polycrystalline silicon contact block is positioned on the left side of the second polycrystalline silicon pointer.
And two ends of the polycrystalline silicon driving beam are driving arms which are respectively connected with the third pair of fixed anchor areas.
The utility model discloses a test structure adopts a plurality of interrelated's thermal energy drive test unit, does not need the coefficient of thermal expansion of material, utilizes each test unit measurement parameter's associativity to calculate the breaking strength who obtains polycrystalline silicon material. The thermal expansion driven test structures have the same thermal expansion characteristics, and meanwhile, the geometric displacement of the movable part of the test structure is limited by the stroke, and the strain generated by thermal expansion is calculated based on the limited stroke.
Has the advantages that: compared with the prior art, the utility model has the following advantages: the utility model discloses a test process is simple, and test equipment requires lowly, and the course of working of test structure is synchronous with micro electromechanical device MEMS, does not have special processing requirement, accords with the requirement of on-line test, and calculation method is limited only to simple mathematical equation, and the test is stable with the calculation process, and the output result is reliable.
Drawings
FIG. 1 is a schematic diagram of a structure for measuring the resistance of a first elongated portion of a first left branch and a first right branch;
FIG. 2 is a schematic structural diagram of measuring the total resistance of the driving arms at two ends of the polysilicon driving beam;
FIG. 3 is a schematic structural diagram of a first testing unit according to the present invention;
FIG. 4 is a schematic structural diagram of a second testing unit of the present invention;
fig. 5 is a schematic structural diagram of a third testing unit according to the present invention.
Detailed Description
The embodiments of the present invention will be described in detail below, and the present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation process are given, but the scope of the present invention is not limited to the following embodiments.
As shown in fig. 3 to 5, the test structure of the present embodiment includes a first test unit, a second test unit, a third test unit, and an insulating substrate, where the first test unit, the second test unit, and the third test unit are disposed on the insulating substrate;
the first test cell includes a first pair of anchor areas C-C, a first independent anchor area D, a first polysilicon contact block 101, a first polysilicon finger 102, and a first polysilicon expansion strip 103, wherein: the first pair of fixed anchor areas C-C and the first independent anchor area D are respectively fixed on the insulating substrate, two ends of a first polycrystalline silicon expansion strip 103 are respectively fixed on the first pair of fixed anchor areas C-C, one end of a first polycrystalline silicon pointer 102 is fixed in the middle of the first polycrystalline silicon expansion strip 103, the other end of the first polycrystalline silicon pointer is suspended, a first polycrystalline silicon contact block 101 is positioned at the suspended end of the first polycrystalline silicon pointer 102 and is fixed on the first independent anchor area D, and the first polycrystalline silicon contact block 101, the first polycrystalline silicon pointer 102 and the first polycrystalline silicon expansion strip 103 are respectively suspended;
the second test cell includes a second pair of fixed anchor regions E-E, a second independent anchor region F, a second polysilicon contact block 201, a second polysilicon finger 202, and a second polysilicon expansion bar 203, wherein: a second pair of fixed anchor areas E-E and a second independent anchor area F are respectively fixed on the insulating substrate, two ends of a second polysilicon expansion strip 203 are respectively fixed on the second pair of fixed anchor areas E-E, one end of a second polysilicon pointer 202 is fixed in the middle of the second polysilicon expansion strip 203, the other end of the second polysilicon pointer is suspended, a second polysilicon contact block 201 is positioned at the suspended end of the second polysilicon pointer 202 and is fixed on the second independent anchor area F, the second polysilicon contact block 201, the second polysilicon pointer 202 and the second polysilicon expansion strip 203 are respectively suspended, the first polysilicon pointer 102 is shorter than the second polysilicon pointer 202, the lengths of a second test unit and the first test unit except the polysilicon pointers are different, and other structures and size characteristics are completely consistent;
the third test unit comprises a third pair of fixed anchor areas G-G, a third independent anchor area H, a polycrystalline silicon driving beam 301 and a polycrystalline silicon breaking strip 302; wherein: the third pair of fixed anchor areas G-G and the third independent anchor area H are respectively fixed on the insulating substrate, the two ends of the polycrystalline silicon driving beam 301 are driving arms 303, the driving arms 303 are respectively connected with the third pair of fixed anchor areas G-G, one end of the polycrystalline silicon fracture strip 302 is fixed in the middle of the polycrystalline silicon driving beam 301, the other end of the polycrystalline silicon fracture strip 302 is fixed on the third independent anchor area H, and the polycrystalline silicon driving beam 301 and the polycrystalline silicon fracture strip 302 are respectively suspended.
The first polysilicon expansion strip 103 comprises a first left branch strip 104 and a first right branch strip 105, one end of the first left branch strip 104 and one end of the first right branch strip 105 are respectively fixed on the first pair of fixed anchor regions C-C, the other ends of the first left branch strip 104 and the first right branch strip 105 are mutually overlapped, the first right branch strip 105 is positioned on the first left branch strip 104, the first left branch strip 104 and the first right branch strip 105 are respectively provided with a first long and narrow part 106, the first polysilicon pointer 102 is fixed at the overlapping position of the first left branch strip 104 and the first right branch strip 105, and the first polysilicon contact block 101 is positioned on the left side of the first polysilicon pointer 102.
The second polysilicon expansion strip 203 comprises a second left branch 204 and a second right branch 205, one end of the second left branch 204 and one end of the second right branch 205 are respectively fixed on the second pair of fixed anchor regions E-E, the other ends of the second left branch 204 and the second right branch 205 are overlapped, the second right branch 205 is positioned on the second left branch 204, the second left branch 204 and the second right branch 205 are respectively provided with a second long and narrow part 206, the second polysilicon pointer 202 is fixed at the overlapping position of the second left branch 204 and the second right branch 205, and the second polysilicon contact block 201 is positioned on the left side of the second polysilicon pointer 202.
The test structure of this embodiment is fabricated as follows:
selecting an N-type semiconductor silicon wafer, thermally growing a silicon dioxide layer with the thickness of 100 nanometers, depositing a layer of silicon nitride with the thickness of 500 nanometers by a low-pressure chemical vapor deposition process, then depositing a layer of phosphorosilicate glass (PSG) with the thickness of 2000 nanometers, and forming a graph of each anchor area by a photoetching process; depositing a layer of polycrystalline silicon with the thickness of 2000 nanometers by adopting a low-pressure chemical vapor deposition process, and carrying out N-type doping on the polycrystalline silicon, wherein the doping concentration is controlled to be about 50 ohm/square; forming all the polysilicon patterns with the test structures by adopting a photoetching process; forming metal electrode patterns on all anchor areas by adopting a stripping process; and finally, releasing the structure by corroding the phosphorosilicate glass.
An on-line testing method for breaking strength of polycrystalline silicon comprises the following steps:
(1) as shown in FIGS. 1 and 2, the fixed length of the A-A anchor region is 2L3, the polysilicon resistor has the same thickness as the first elongated portion 106, the resistance of the A-A anchor region is the same as the total resistance of the first elongated portion 106 on the first left branch 104 and the first right branch 105 at room temperature, and the resistance is denoted as R as measured by an ohmmeterA；
The fixed length of the B-B anchor area is 2L6, the polysilicon resistor with the same thickness as the driving arm 303, and the resistance value of the B-B anchor area and the polysilicon driving beam 301 are two at room temperatureThe total resistance of the end drive arms 303 is the same, as measured by an ohmmeter, and is denoted as RB；
Measuring the resistance R between the first pair of anchor regions C-C at room temperature by an ohmmeterC，
Measuring the resistance R between the third pair of fixed anchor regions G-G at room temperature by an ohmmeterE，
(2) For the first test unit: applying a slowly increasing current between the first pair of anchor regions C-C, when the resistance between the left anchor region and the first independent anchor region D changes from infinity to a finite value, indicating that the first polysilicon finger 102 has contacted the first polysilicon contact pad 101 due to the counterclockwise deflection, recording the resistance R between the first pair of anchor regions C-C at that timeCT，
The thermal driving is generated by the first elongated portion 106 of the first left branch 104 and the first right branch 105 having the length L3, because the first elongated portion 106 is thin and has a large resistance, and when the first elongated portion is energized, the temperature of the portion is high, and the amount of thermal expansion generated is large. When a direct current is passed between the first pair of anchor regions C-C, the first elongated portion 106 expands due to heat, pushing the polysilicon finger to rotate counterclockwise about the center point 107, thereby contacting the first polysilicon contact pad 101, causing the resistance between the left anchor region and the first independent anchor region D to change from infinite in the open state to a finite value.
Similarly, the resistance R between the second pair of anchor regions E-E is measuredDT；
(3) For the third test unit: applying a slowly increasing current between the third pair of anchor areas G-G, and recording the resistance value R between the third pair of anchor areas G-G when the resistance between any one of the anchor areas and the third independent anchor area H changes from a finite value to infinityET(ii) a When current is passed between the third pair of anchor regions G-G, the drive arms 303 at the two ends of the polysilicon drive beam 301 will cause the polysilicon drive beam 301 to move upward, as the third independent anchor region H is fixed, and the resulting vertical force causes polysilicon to move upwardThe breaking strips 302 are stretched, and when the breaking strength is reached, the polycrystalline silicon breaking strips 302 are broken;
(4) since the materials are the same, the thermal expansion coefficients of the polysilicon of the test cells in FIGS. 3-5 are the same. The basic relationship of thermal expansion shows that: when the contact between the polysilicon finger and the polysilicon contact block occurs in the first test unit and the second test unit, the relationship between the expansion amount and the temperature variation amount of the long and narrow part with the length of L3 is as follows:
ΔLC＝L3·α·ΔTC
ΔLD＝L3·α·ΔTD
where α is the coefficient of thermal expansion of the polysilicon, Δ LCAnd Δ LDThe thermal expansion amount, Δ T, of the narrow and long portion having a length of L3 in the first test cell and the second test cell, respectivelyCAnd Δ TDIs the amount of temperature change in the narrow and long portion of the first test unit and the second test unit having a length of L3.
The geometrical relationship between the first test unit and the second test unit in fig. 3 and 4 results in:
therefore, the temperature of the molten metal is controlled,
order toGet Delta TD＝λ·ΔTC。
As shown in FIG. 5, when breakage of the fine polysilicon strip occurred in the third test cell, the driving arm 303 having a length of L6 expanded by an amount Δ LEAnd temperature variation amount delta TEThe relationship of (1) is:
ΔLE＝L6·α·ΔTE
by Δ LC＝L3·α·ΔTCTo obtain <math>
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</mrow>
</mfrac>
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<msub>
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</msub>
</mrow>
</mfrac>
<mo>,</mo>
</mrow>
</math>
Therefore, the temperature of the molten metal is controlled,
Wherein,
is strain at the time of fracture, so Δ TE＝β·εE·ΔTC。
Calculating the relative resistance variation before and after the expansion of the first test unit, the second test unit and the third test unit:
for the first test cell, since the thermal expansion occurs mainly in the length of L3 of the first elongated portion 106, the relative resistance change is:
Similarly, the relative resistance variation of the second test unit and the third test unit is as follows:
Delta T obtained as described aboveD、ΔTEAnd Δ TCThe relationship, yields:
order: <math>
<mrow>
<msub>
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</math> obtaining a final solution equation:
x+y＝kC
λx+λ2y＝kD
wherein: k is a radical ofC、kD、kEFrom the measured values, λ, β are ratios of the geometric dimensions, both of which are known values in the calculation. Can simply solve the values of x and y and substitute the solved values of x and y into
Can obtain strain epsilonE。
Since the strain is positive, the solution is:
the breaking strength means the stress at which the material breaks, and therefore, the breaking strength σBSComprises the following steps:
σBS＝EBSεE
EBSis the young's modulus of the polysilicon material at break, L1 is the length of the second polysilicon finger 202, L2 is the length of the first polysilicon finger 102, L3 is the length of the first elongated portion 106 on the first left branch 104, L4 is the horizontal distance between the first polysilicon finger 102 and the first polysilicon contact block 101, and L5 is the vertical distance between the center point of rotation 107 of the first polysilicon finger 102 and the horizontal center line of the first elongated portion 106 on the first right branch 105.
Claims (4)
1. An online test structure for the breaking strength of polycrystalline silicon is characterized by comprising a first test unit, a second test unit, a third test unit and an insulating substrate, wherein the first test unit, the second test unit and the third test unit are arranged on the insulating substrate;
the first test cell comprises a first pair of anchor areas (C-C), a first independent anchor area (D), a first polysilicon contact block (101), a first polysilicon finger (102) and a first polysilicon expansion strip (103), wherein: the first pair of fixed anchor areas (C-C) and the first independent anchor area (D) are respectively fixed on the insulating substrate, two ends of a first polycrystalline silicon expansion strip (103) are respectively fixed on the first pair of fixed anchor areas (C-C), one end of a first polycrystalline silicon pointer (102) is fixed in the middle of the first polycrystalline silicon expansion strip (103), the other end of the first polycrystalline silicon pointer is suspended, a first polycrystalline silicon contact block (101) is located at the suspended end of the first polycrystalline silicon pointer (102) and is fixed on the first independent anchor area (D), and the first polycrystalline silicon contact block (101), the first polycrystalline silicon pointer (102) and the first polycrystalline silicon expansion strip (103) are respectively suspended;
the second test cell comprises a second pair of fixed anchor areas (E-E), a second independent anchor area (F), a second polysilicon contact block (201), a second polysilicon finger (202) and a second polysilicon expansion bar (203), wherein: a second pair of fixed anchor regions (E-E) and a second independent anchor region (F) are respectively fixed on the insulating substrate, two ends of a second polysilicon expansion strip (203) are respectively fixed on the second pair of fixed anchor regions (E-E), one end of a second polysilicon pointer (202) is fixed in the middle of the second polysilicon expansion strip (203), the other end of the second polysilicon pointer is suspended, a second polysilicon contact block (201) is positioned at the suspended end of the second polysilicon pointer (202) and is fixed on the second independent anchor region (F), the second polysilicon contact block (201), the second polysilicon pointer (202) and the second polysilicon expansion strip (203) are respectively suspended, and the first polysilicon pointer (102) is shorter than the second polysilicon pointer (202);
the third test unit comprises a third pair of fixed anchor areas (G-G), a third independent anchor area (H), a polycrystalline silicon driving beam (301) and a polycrystalline silicon fracture strip (302); wherein: the third pair of fixed anchor areas (G-G) and the third independent anchor area (H) are respectively fixed on the insulating substrate, two ends of the polycrystalline silicon driving beam (301) are respectively fixed on the third pair of fixed anchor areas (G-G), one end of the polycrystalline silicon fracture strip (302) is fixed in the middle of the polycrystalline silicon driving beam (301), the other end of the polycrystalline silicon fracture strip is fixed on the third independent anchor area (H), and the polycrystalline silicon driving beam (301) and the polycrystalline silicon fracture strip (302) are respectively suspended.
2. The on-line test structure for breaking strength of polysilicon according to claim 1, wherein: the first polycrystalline silicon expansion strip (103) comprises a first left branch strip (104) and a first right branch strip (105), one ends of the first left branch strip (104) and the first right branch strip (105) are respectively fixed on a first pair of fixed anchor regions (C-C), the other ends of the first left branch strip (104) and the first right branch strip (105) are mutually overlapped, the first right branch strip (105) is located on the first left branch strip (104), first long and narrow parts (106) are respectively arranged on the first left branch strip (104) and the first right branch strip (105), a first polycrystalline silicon pointer (102) is fixed at the overlapping position of the first left branch strip (104) and the first right branch strip (105), and a first polycrystalline silicon contact block (101) is located on the left side of the first polycrystalline silicon pointer (102).
3. The on-line test structure for breaking strength of polysilicon according to claim 1, wherein: the second polycrystalline silicon expansion strip (203) comprises a second left branch strip (204) and a second right branch strip (205), one ends of the second left branch strip (204) and the second right branch strip (205) are respectively fixed on a second pair of fixed anchor regions (E-E), the other ends of the second left branch strip (204) and the second right branch strip (205) are mutually overlapped, the second right branch strip (205) is positioned on the second left branch strip (204), second long and narrow parts (206) are respectively arranged on the second left branch strip (204) and the second right branch strip (205), a second polycrystalline silicon pointer (202) is fixed at the overlapping position of the second left branch strip (204) and the second right branch strip (205), and a second polycrystalline silicon contact block (201) is positioned on the left side of the second polycrystalline silicon pointer (202).
4. The on-line test structure for breaking strength of polysilicon according to claim 2, wherein: and two ends of the polycrystalline silicon driving beam (301) are provided with driving arms (303), and the driving arms (303) are respectively connected with a third pair of fixed anchor areas (G-G).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102590282A (en) * | 2012-01-11 | 2012-07-18 | 东南大学 | On-line test structure and test method for breaking strength of polycrystalline silicon |
| CN104034575A (en) * | 2014-06-03 | 2014-09-10 | 东南大学 | Structure and testing method for testing Poisson ratio of thin-film silicon material on insulating substrate |
| CN104568586A (en) * | 2015-01-08 | 2015-04-29 | 东南大学 | Structure for testing breaking strength of film material |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102590282A (en) * | 2012-01-11 | 2012-07-18 | 东南大学 | On-line test structure and test method for breaking strength of polycrystalline silicon |
| CN102590282B (en) * | 2012-01-11 | 2014-03-12 | 东南大学 | On-line test structure and test method for breaking strength of polycrystalline silicon |
| CN104034575A (en) * | 2014-06-03 | 2014-09-10 | 东南大学 | Structure and testing method for testing Poisson ratio of thin-film silicon material on insulating substrate |
| CN104568586A (en) * | 2015-01-08 | 2015-04-29 | 东南大学 | Structure for testing breaking strength of film material |
| CN104568586B (en) * | 2015-01-08 | 2017-02-22 | 东南大学 | Structure for testing breaking strength of film material |
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