CN104022168A - 防老化光电位移传感器 - Google Patents
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- 238000006073 displacement reaction Methods 0.000 title claims abstract description 24
- 230000003712 anti-aging effect Effects 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
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- 229910052738 indium Inorganic materials 0.000 claims abstract description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 66
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- 239000007789 gas Substances 0.000 claims description 20
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000013077 target material Substances 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 8
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- 239000008367 deionised water Substances 0.000 description 8
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- 230000008021 deposition Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 210000004877 mucosa Anatomy 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
本发明涉及一种防老化光电位移传感器，包括半导体衬底、半导体衬底表面的Al掺杂氧化锌薄膜以及薄膜表面的两个铟点电极。通过在经超声清洗的Si基片上沉积Al掺杂ZnO薄膜替代金属-氧化物-半导体结构中金属薄膜层，可以得到基于侧向光伏效应的防老化光电位移传感器。该传感器的非线性率可以控制在3.22%,位置灵敏度可以达到41.85mV/mm。且由于直接使用Al掺杂ZnO靶材，制备工艺简单，可以在实际生产中大规模制备。
Description
技术领域
本发明涉及光电位移探测器领域，特别是涉及一种基于侧向光伏效应的光电位移传感器。
背景技术
近年来，基于侧向光伏效应的光电位移传感器在金属-氧化物-半导体（MOS）或基于金属-半导体（MS）结构的光电位移传感器因为精度较高、线性度良好且造价相对低廉受到了极大关注，开始在军事、工业检测等领域得到广泛应用。不同的金属材料包括钛(Ti)、钴（Co）及铜（Cu）等因可以改善位移传感器的线性度或灵敏度而被广泛研究。然而，在实际应用过程中，金属材料因极易被氧化，造成器件老化而影响器件性能。因此，有必要探索出能够防止器件老化的工艺或新的材料。
经过对现有技术的检索发现， 有文献提出在金属层外额外沉积一层TiO2氧化薄膜从而形成氧化物-金属-半导体结构，用于提高器件性能并防止老化。但对氧化层的厚度要求苛刻且成分较难均匀，在实际应用中较难实现。
发明内容
本发明针对现有的基于侧向光伏效应的光电位移传感器在实际应用中存在的明显缺陷，在空气中极易老化使得器件效应消失，提出用磁控溅射技术制备Al掺杂ZnO薄膜，替代金属-氧化物-半导体结构中金属薄膜层，从而制备出高线性度、高精确度、防老化性能优异的光电位移探测器。
一种防老化光电位移传感器，其特征在于，包括半导体衬底、半导体衬底表面的Al掺杂氧化锌薄膜以及薄膜表面的两个铟点电极。
所述的半导体衬底是经超声清洗的n型Si基底，厚度为0.3mm，电阻率为50-80Ω.cm，表面的自然氧化层二氧化硅厚度为1.2nm。
所述的Al掺杂氧化锌薄膜是用磁控溅射技术制备，厚度为20-200nm。
所述的Al掺杂氧化锌薄膜是用磁控溅射技术制备，是将磁控溅射室本底真空抽至10-5 Pa后，通入氩气并调整气体流量计使气压达到0.7Pa，利用磁控溅射设定溅射功率为40W，靶材为2% 三氧化二铝, 98% 氧化锌的Al掺杂氧化锌靶材，溅射时间为200-1600秒。
所述的电极，为直径不超过1mm铟点电极，两电极之间的距离不超过4mm。
本发明对基于侧向光伏效应的光电位移传感器具有以下增益效果：
1、本发明通过将Al掺杂ZnO替代传统的金属薄膜层，可以显著提高基于侧向光伏效应的光电位移传感器的抗老化性。
2、本发明通过设置Al掺杂ZnO薄膜层的厚度，使得基于侧向光伏效应的光电位移传感器灵敏度和线性度达到最优。
3、本发明涉及材料成本较低，制备简单，沉积过程易于控制，可实现大规模生产应用。
附图说明
图1防老化光电位移传感器结构示意图。
图2为两个电极间距离为4mm时，侧向光伏随光照位置的变化关系。
图3 样品3与样品7的刚制备好以及在空气中放置1月以后的性能比较图。
具体实施方式
下面对本发明的实施例作详细说明，本实施例在以本发明技术方案为前提下进行实施，给出了详细的实施方式和具体的操作过程，但本发明的保护范围不限于下述的实施例。
实施例1：
将Si基片用丙酮、去离子水在超声波清洗器中洗净，干燥后，放入磁控溅射腔，抽真空至10-5 Pa后，通入氩气并调整气体流量计使气压达到0.7Pa，设置溅射功率为40W，溅射Al掺杂ZnO靶材(2% Al2O3, 98% ZnO)200s，制成厚度约25 nm的薄膜。
实施例2：
将Si基片用丙酮、去离子水在超声波清洗器中洗净，干燥后，放入磁控溅射腔，抽真空至10-5 Pa后，通入氩气并调整气体流量计使气压达到0.7Pa，设置溅射功率为40W，溅射Al掺杂ZnO靶材(2% Al2O3, 98% ZnO)400s，制成厚度约49 nm的薄膜。
实施例3：
将Si基片用丙酮、去离子水在超声波清洗器中洗净，干燥后，放入磁控溅射腔，抽真空至10-5 Pa后，通入氩气并调整气体流量计使气压达到0.7Pa，设置溅射功率为40W，溅射Al掺杂ZnO靶材(2% Al2O3, 98% ZnO)600s，制成厚度约74 nm的薄膜。
实施例4：
将Si基片用丙酮、去离子水在超声波清洗器中洗净，干燥后，放入磁控溅射腔，抽真空至10-5 Pa后，通入氩气并调整气体流量计使气压达到0.7Pa，设置溅射功率为40W，溅射Al掺杂ZnO靶材(2% Al2O3, 98% ZnO)800s，制成厚度约100 nm的薄膜。
实施例5：
将Si基片用丙酮、去离子水在超声波清洗器中洗净，干燥后，放入磁控溅射腔，抽真空至10-5 Pa后，通入氩气并调整气体流量计使气压达到0.7Pa，设置溅射功率为40W，溅射Al掺杂ZnO靶材(2% Al2O3, 98% ZnO)1000s，制成厚度约124 nm的薄膜。
实施例6：
将Si基片用丙酮、去离子水在超声波清洗器中洗净，干燥后，放入磁控溅射腔，抽真空至10-5 Pa后，通入氩气并调整气体流量计使气压达到0.7Pa，设置溅射功率为40W，溅射Al掺杂ZnO靶材(2% Al2O3, 98% ZnO)1200s，制成厚度约148 nm的薄膜。
实施例7：
将Si基片用丙酮、去离子水在超声波清洗器中洗净，干燥后，放入磁控溅射腔，抽真空至10-5 Pa后，通入氩气并调整气体流量计使气压达到0.7Pa，设置溅射功率为40W，溅射Al掺杂ZnO靶材(2% Al2O3, 98% ZnO)1400s，制成厚度约173 nm的薄膜。
实施例8：
将Si基片用丙酮、去离子水在超声波清洗器中洗净，干燥后，放入磁控溅射腔，抽真空至10-5 Pa后，通入氩气并调整气体流量计使气压达到0.7Pa，设置溅射功率为40W，溅射Al掺杂ZnO靶材(2% Al2O3, 98% ZnO)1600s，制成厚度约200nm的薄膜。
将实施例1-8的Al掺杂ZnO薄膜表面分别压上铟点形成电极，可形成简单的基于侧向光伏效应的一维光电位移探测器。当激光照射在Al掺杂ZnO薄膜表面上两个电极间不同的位置时，两电极的输出电压不同。该输出电压称为侧向光伏。图2为两个电极间距离为4mm时，侧向光伏随光照位置的变化关系。表1给出了实施例1-8的侧向光伏效应的位置灵敏度和非线性率。
表1
基于侧向光伏效应的光电位移传感器性能的两个重要因素为非线性度和位置灵敏度。从图2和表1可以看出，当Al掺杂ZnO薄膜厚度在20-200nm范围内时，位置灵敏度均较高，非线性率控制在6.1%以内。其中实施例3的非线性度最低，可控制在3.22%；实施例7的位置灵敏度最高，达41.85mV/mm。
选取实施例3与例7作为代表，将图1中的结构在空气中自然放置1一个月后，重新测量了实施例3与例7的侧向光伏效应，与图1中的实施例3与例7比较结果如图3所示。实施例3与7均具有良好的防氧化性能。
磁控溅射沉积制备的Al掺杂ZnO薄膜作为基于侧向光伏效应光电位移传感器线性度高、位置灵敏度大且具备优异的防老化功能。在实际制备中具有重要应用价值。
Claims (5)
1.一种防老化光电位移传感器，其特征在于，包括半导体衬底、半导体衬底表面的Al掺杂氧化锌薄膜以及薄膜表面的两个铟点电极。
2.根据权利要求1所述防老化光电位移传感器，其特征在于，所述的半导体衬底是经超声清洗的n型Si基底，厚度为0.3mm，电阻率为50-80Ω.cm，表面的自然氧化层二氧化硅厚度为1.2nm。
3.根据权利要求1所述防老化光电位移传感器，其特征在于，所述的Al掺杂氧化锌薄膜是用磁控溅射技术制备，厚度为20-200nm。
4.根据权利要求3所述防老化光电位移传感器，其特征在于，所述的Al掺杂氧化锌薄膜是用磁控溅射技术制备，是将磁控溅射室本底真空抽至10-5 Pa后，通入氩气并调整气体流量计使气压达到0.7Pa，利用磁控溅射设定溅射功率为40W，靶材为2% 三氧化二铝, 98% 氧化锌的Al掺杂氧化锌靶材，溅射时间为200-1600秒。
5.根据权利要求1所述防老化光电位移传感器，其特征在于，所述的电极，为直径不超过1mm铟点电极，两电极之间的距离不超过4mm。
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| CN105043423A (zh) * | 2015-07-24 | 2015-11-11 | 宋金会 | 位置传感器 |
| CN106024926A (zh) * | 2016-07-15 | 2016-10-12 | 哈尔滨工业大学 | 快速光电恢复响应的近紫外光电位敏传感器及其制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202814345U (zh) * | 2012-08-31 | 2013-03-20 | 上海交通大学 | 一种光电位移传感器 |
-
2014
- 2014-05-28 CN CN201410229653.7A patent/CN104022168A/zh active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202814345U (zh) * | 2012-08-31 | 2013-03-20 | 上海交通大学 | 一种光电位移传感器 |
Non-Patent Citations (1)
| Title |
|---|
| JING LU AND HUI WANG: "Large lateral photovoltaic effect observed in nano Al-doped ZnO films", 《OPTICS EXPRESS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105043423A (zh) * | 2015-07-24 | 2015-11-11 | 宋金会 | 位置传感器 |
| CN105043423B (zh) * | 2015-07-24 | 2018-06-05 | 宋金会 | 位置传感器 |
| CN106024926A (zh) * | 2016-07-15 | 2016-10-12 | 哈尔滨工业大学 | 快速光电恢复响应的近紫外光电位敏传感器及其制备方法 |
| CN106024926B (zh) * | 2016-07-15 | 2017-05-24 | 哈尔滨工业大学 | 快速光电恢复响应的近紫外光电位敏传感器及其制备方法 |
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