CN104009742A - Silicon controlled rectifier trigger - Google Patents

Silicon controlled rectifier trigger Download PDF

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Publication number
CN104009742A
CN104009742A CN201310056818.0A CN201310056818A CN104009742A CN 104009742 A CN104009742 A CN 104009742A CN 201310056818 A CN201310056818 A CN 201310056818A CN 104009742 A CN104009742 A CN 104009742A
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China
Prior art keywords
resistance
circuit
triode
silicon controlled
pin
Prior art date
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Granted
Application number
CN201310056818.0A
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Chinese (zh)
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CN104009742B (en
Inventor
马松林
李安
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Dalian Xing Hang Mechanical & Electronic Equipment Corp Ltd
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Dalian Xing Hang Mechanical & Electronic Equipment Corp Ltd
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Priority to CN201310056818.0A priority Critical patent/CN104009742B/en
Publication of CN104009742A publication Critical patent/CN104009742A/en
Application granted granted Critical
Publication of CN104009742B publication Critical patent/CN104009742B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The invention belongs to a silicon controlled rectifier trigger which includes a trigger signal input circuit (1), a linear voltage stabilizing circuit (4) and a trigger signal output circuit (5). The silicon controlled rectifier trigger is characterized in that a photoelectric isolating circuit (2) and an anode voltage conversion circuit (3) are arranged in a system and a silicon controlled rectifier trigger circuit includes photoelectric couplers MC1 and MC2 and power triodes T4 and T14. The silicon controlled rectifier trigger solves completely a problem of isolation of strong current and weak current and is simple and convenient to use; and a minor power-supplying power supply is eliminated so that the stability and reliability of trigger pulses are improved.

Description

Silicon controlled toggle
Technical field
The invention belongs to electrical control gear, particularly a kind of silicon controlled toggle.
Background technology
Semiconductor power device controllable silicon is in electric control field or extensive use, traditional silicon controlled toggle adopts pulse transformer principle to form, apply very extensive, but in electromagnetism hoisting equipment, need fine adjustment SCR Trigger Angle, reach the object of fine adjustment exciting voltage, because pulse transformer parameter is inconsistent, cause thyristor operating angle inconsistent, result causes exciting voltage unstable; Pulse transformer adopts magnetic coupling mode, and the permeability of magnet can not accomplish unanimously, to cause the difference of the degree of coupling, causes trigger voltage inconsistent; Transformer coupled mode trigger is that bilateral device is forward and oppositely can be coupled, result cause high order harmonic component be coupled to former limit cause trigger unreliable; Due to the restriction of transformer-coupled structure, during application, need multi-group power power supply to work.
Summary of the invention
The object of the invention is to overcome above-mentioned technical deficiency, a kind of employing photoelectricity isolation switch technology and controllable silicon anode voltage regulation technology are provided, can directly be connected with light current triggering signal, solve isolation between strong, weak electricity, remove secondary power supply, improve trigger impulse stability and reliability.
The technical scheme that technical solution problem of the present invention adopts is: a kind of silicon controlled toggle, comprise triggering signal input circuit, linear voltage-stabilizing circuit and triggering signal output circuit, it is characterized in that being provided with photoelectric isolating circuit one and anode voltage translation circuit one in system.Photoelectric isolating circuit is comprised of photoelectrical coupler MC1, triode T1, capacitor C 2, C3 and resistance R 4, R5; 1,2 pin of photoelectrical coupler MC1, parallel resistance R2, R3, capacitor C 1,1 pin series resistance R1 and triggering signal S1,3,4 pin shunt capacitance C2 and resistance R 4,4 pin connecting resistance R5, R6 one end, 5 pin connect collector electrode, the triode T2 emitter in anode voltage translation circuit and the resistance R 9 of triode T1, one end of R8; The emitter of triode T1 meets capacitor C 3, resistance R 5 other ends, resistance R 7 one end, SCR control utmost point G2; Anode voltage translation circuit one is comprised of pliotron T4, T2, diode D1, resistance R 9 ~ R12; The collector electrode of 1 pin connecting resistance R11, R10, R12 one end and the triode T2 of pliotron T4; 2 pin connecting resistance R11, diode D1 one end, the base stage of 3 pin connecting resistance R9, the R10 other end and triode T2.
The invention has the beneficial effects as follows: this invention has thoroughly solved isolating problem between strong, weak electricity, easy to use; Remove secondary power supply, improved trigger impulse stability and reliability.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, with embodiment, illustrate.
Fig. 1 is the theory diagram of silicon controlled toggle;
Fig. 2 is the electrical schematic diagram of Fig. 1.
In figure: 1-triggering signal input circuit; 2-photoelectric isolating circuit one; 2-1-photoelectric isolating circuit two; 3-anode voltage translation circuit one; 3-1-anode voltage translation circuit two; 4-linear voltage-stabilizing circuit; 5-triggering signal output circuit; MC1, MC2-photoelectrical coupler; T4, T14-pliotron; T1, T2, T11, T12-triode; D1, D2-diode; C1 ~ C6-electric capacity; S1, S2-triggering signal; R1 ~ R25-resistance; A1, A2-controllable silicon anode; G1, the G2-SCR control utmost point; K1, K2-controllable silicon negative electrode.
Embodiment
Embodiment, with reference to accompanying drawing, a kind of silicon controlled toggle, comprises triggering signal input circuit 1, linear voltage-stabilizing circuit 4 and triggering signal output circuit 5, it is characterized in that being provided with photoelectric isolating circuit 2 and anode voltage translation circuit 3 in system.Photoelectric isolating circuit 2 is comprised of photoelectrical coupler MC1, triode T1, capacitor C 1, C2, C3 and resistance R 4, R5; 1,2 pin of photoelectrical coupler MC1, parallel resistance R2, R3, capacitor C 1,1 pin series resistance R1 and triggering signal S1,3,4 pin shunt capacitance C2 and resistance R 4,4 pin connecting resistance R5, R6 one end, 5 pin connect collector electrode, the triode T2 emitter in anode voltage translation circuit 3 and the resistance R 9 of triode T1, one end of R8; The emitter of triode T1 meets capacitor C 3, resistance R 5 other ends, resistance R 7 one end, SCR control utmost point G2; Anode voltage translation circuit 1 is comprised of pliotron T4, T2, diode D1, resistance R 9 ~ R12; The collector electrode of 1 pin connecting resistance R11, R10, R12 one end and the triode T2 of pliotron T4; 2 pin connecting resistance R11, diode D1 one end, the base stage of 3 pin connecting resistance R9, the R10 other end and triode T2.In Circuits System, be also provided with photoelectric isolating circuit two (2-1) and anode voltage translation circuit two (3-1); 1,2 pin parallel resistance R15, the R13 of photoelectrical coupler MC2 in photoelectric isolating circuit two (2-1), capacitor C 6,1 pin series resistance R14 and triggering signal S2,3,4 pin shunt capacitance C5, resistance R 17,4 pin connecting resistance R18, R16 one end, 5 pin connect triode T12 emitter in triode T11 collector electrode, anode voltage translation circuit two (3-1) and resistance R 21, R19 one end; The emitter of triode T11 connects capacitor C 4, resistance R 16the other end, resistance R 20 and SCR control utmost point G1; The collector electrode of 1 pin connecting resistance R22, R24, R23 one end and the triode T12 of the pliotron T14 of anode voltage translation circuit two (3-1), 2 pin connect diode D2 one end and resistance R 23 other ends.Diode D2 meets controllable silicon anode A 1 and resistance R 8, the R13 other end and controllable silicon negative electrode K2, resistance R 19, another termination controllable silicon negative electrode of R25 K1.
The principle of this patent technical solution problem is: adopt photoelectric isolating circuit 1 and photoelectric isolating circuit two 2-1 to form opto-electronic conversion, accomplish that triggering signal and forceful electric power isolate completely, replace the magnetic coupling of prior art.Adopt the linear regulation voltage stabilizing technique of linear voltage-stabilizing circuit 4, solve anode voltage and can accomplish secondary power supply problem, replace the trigger power supply of prior art.By technical measures above, solved less target and the inconsistent problem of Trigger Angle of silicon controlled toggle parameter error, thereby thoroughly solved the technical barrier of exciting voltage shakiness.

Claims (3)

1. a silicon controlled toggle, comprise triggering signal input circuit (1), linear voltage-stabilizing circuit (4) with triggering signal output circuit (5), it is characterized in that being provided with in system photoelectric isolating circuit one (2) with anode voltage translation circuit one (3).
2. silicon controlled toggle according to claim 1, is characterized in that (2) photoelectric isolating circuit one is comprised of photoelectrical coupler MC1, triode T1, capacitor C 1, C2, C3 and resistance R 4, R5; 1,2 pin of photoelectrical coupler MC1, parallel resistance R2, R3, capacitor C 1,1 pin series resistance R1 and triggering signal S1,3,4 pin shunt capacitance C2 and resistance R 4,4 pin connecting resistance R5, R6 one end, 5 pin connect collector electrode, the triode T2 emitter in anode voltage translation circuit 3 and the resistance R 9 of triode T1, one end of R8; The emitter of triode T1 meets capacitor C 3, resistance R 5 other ends, resistance R 7 one end, SCR control utmost point G2.
3. silicon controlled toggle according to claim 1, is characterized in that (3) anode voltage translation circuit one is comprised of pliotron T4, T2, diode D1, resistance R 9 ~ R12; The collector electrode of 1 pin connecting resistance R11, R10, R12 one end and the triode T2 of pliotron T4; 2 pin connecting resistance R11, diode D1 one end, the base stage of 3 pin connecting resistance R9, the R10 other end and triode T2.
CN201310056818.0A 2013-02-22 2013-02-22 Silicon controlled toggle Expired - Fee Related CN104009742B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310056818.0A CN104009742B (en) 2013-02-22 2013-02-22 Silicon controlled toggle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310056818.0A CN104009742B (en) 2013-02-22 2013-02-22 Silicon controlled toggle

Publications (2)

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CN104009742A true CN104009742A (en) 2014-08-27
CN104009742B CN104009742B (en) 2017-10-20

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4097770A (en) * 1976-06-11 1978-06-27 Rca Corporation SCR trigger circuit
CN202077009U (en) * 2011-05-26 2011-12-14 比亚迪股份有限公司 Isolating trigger circuit for thyristor
CN203135830U (en) * 2013-02-22 2013-08-14 大连星航机电设备有限公司 SCR trigger

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4097770A (en) * 1976-06-11 1978-06-27 Rca Corporation SCR trigger circuit
CN202077009U (en) * 2011-05-26 2011-12-14 比亚迪股份有限公司 Isolating trigger circuit for thyristor
CN203135830U (en) * 2013-02-22 2013-08-14 大连星航机电设备有限公司 SCR trigger

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
李杏春、徐平、李华、赵嘉蔚: "《8098单片机原理及实用接口技术》", 31 May 1996, 北京航空航天大学出版社 *

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