CN202077009U - Isolating trigger circuit for thyristor - Google Patents
Isolating trigger circuit for thyristor Download PDFInfo
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- CN202077009U CN202077009U CN2011201721305U CN201120172130U CN202077009U CN 202077009 U CN202077009 U CN 202077009U CN 2011201721305 U CN2011201721305 U CN 2011201721305U CN 201120172130 U CN201120172130 U CN 201120172130U CN 202077009 U CN202077009 U CN 202077009U
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Abstract
The utility model provides an isolating trigger circuit for a thyristor, which comprises a diode D51, resistors R51, R52 and R53, a voltage stabilizer, a capacitor C51, a transistor coupler U51 and a bidirectional thyristor TR51. A pole T2 of the bidirectional thyristor TR51 is simultaneously connected with one end of an alternating-current power source and an anode of the diode D51 through loads, a pole T1 of the bidirectional thyristor TR51 is connected with the other end of the alternating-current power source, a cathode of the diode D51 is connected with a collector of a triode of a transistor coupler through the resistor R53, an anode of a diode of the transistor coupler is connected with an output end of a direct-current power source, the cathode of the diode of the transistor coupler is connected with a control signal input end through the resistor R52, an emitter of the triode of the transistor coupler is connected with a pole G of the bidirectional thyristor TR 51 through the resistor R51, and the voltage stabilizer and the capacitor C51 after parallel connection is connected between the collector of the triode of the transistor coupler and the pole T1 of the bidirectional thyristor TR51. The isolating trigger circuit for the thyristor has the advantages of simple structure and lower cost.
Description
Technical field
The utility model relates to a kind of circuit structure, relates in particular to a kind of silicon controlled insulation triggering circuit.
Background technology
At present, need to isolate in a large amount of circuit, especially household electrical appliance, for example variable-frequency washing machine, convertible frequency air-conditioner etc. with controllable silicon.
Silicon controlled isolate to trigger and to mainly contain following dual mode in the prior art: first kind, use light-operated bidirectional triode thyristor, as shown in Figure 1, this control method is utilized the control signal TR2 of MCU, when TR2 is high level, triode Q21 conducting, bidirectional triode thyristor IC21 conducting, thereby controllable silicon TR21 conducting.Because the output of bidirectional triode thyristor IC21 need be high voltage bearing, so its price is higher; Second kind, utilize transformer isolation, as shown in Figure 2, its provide one group with the power supply of control circuit power supply independently, this power supply exchanges input and has only single-point to connect with AC, be relatively independent.This circuit has the output of two-way at least, and output is isolated fully.The loop of its control conducting is from AC220L-T1-G-R31-U31-Gnd1-, because this triggering loop voltage is a low pressure, so can using, it has only tens volts of withstand voltage lower-cost normal optical lotus roots, but this control method is owing to need one group of extra loop, and increased the peripheral circuit of its transformer of transformer, make circuit structure complicated, and increased circuit cost, simultaneously since wherein one road power supply be to draw by transformer, angle from physical space, itself and electricity consumption end (controllable silicon) are far away, are inconvenient to connect up, and it can increase size and the cost of PCB.So the circuit structure of in the prior art controllable silicon being isolated triggering is complicated, cost is higher.
Be understandable that the statement of this part only provides the background information relevant with the utility model, may constitute or not constitute so-called prior art.
Summary of the invention
Technical problem to be solved in the utility model is that the circuit structure of isolating triggering at controllable silicon in the prior art is complicated, and the defective that cost is higher provides a kind of controllable silicon insulation triggering circuit simple in structure, lower-cost.
The technical scheme that its technical problem that solves the utility model adopts provides a kind of silicon controlled insulation triggering circuit, it is characterized in that, comprise diode D51, resistance R 51, R52, R53, voltage stabilizing part, capacitor C 51, transistors couple device U51, reach bidirectional triode thyristor TR51; The T2 utmost point of bidirectional triode thyristor TR51 links to each other with an end of AC power and the anode of diode D51 by load simultaneously, and its T1 utmost point connects the other end of AC power; The negative electrode of diode D51 connects the collector electrode of the triode of transistors couple device by resistance R 53; The anode of the diode of transistors couple device connects dc power output end, and its negative electrode links to each other with control signal output ends by resistance R 52, and the emitter of the triode of transistors couple device connects the G utmost point of bidirectional triode thyristor TR51 by resistance R 51; Be connected in after voltage stabilizing part and capacitor C 51 are in parallel between the T1 utmost point of the collector electrode of triode of transistors couple device and bidirectional triode thyristor.
In the silicon controlled insulation triggering circuit that the utility model provides, also can replace bidirectional triode thyristor with one-way SCR, the circuit connecting of the anode of one-way SCR is extremely identical with the T2 of bidirectional triode thyristor, and the circuit connecting of the negative electrode of one-way SCR is extremely identical with the T1 of bidirectional triode thyristor.
In above-mentioned silicon controlled insulation triggering circuit, described voltage stabilizing part is resistance or voltage-stabiliser tube.
In above-mentioned silicon controlled insulation triggering circuit, described capacitor C 51 is a polar capacitor.
The silicon controlled insulation triggering circuit that the utility model provides, it adopts common optocoupler can isolate controllable silicon, and only adopt a diode, three resistance, a voltage stabilizing part and electric capacity can trigger optocoupler, so the circuit that the utility model provides can be realized silicon controlled and isolate when triggering, components and parts are few and simple, thereby entire circuit is simple, cost is lower.
Description of drawings
Fig. 1 is that silicon controlled of the prior art is isolated the circuit diagram that triggers;
Fig. 2 is that another silicon controlled of the prior art is isolated the circuit diagram that triggers;
Fig. 3 is the circuit diagram of a preferred embodiment of the silicon controlled insulation triggering circuit that provides of the utility model.
Embodiment
Clearer for technical problem, technical scheme and beneficial effect that the utility model is solved, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
The silicon controlled insulation triggering circuit that the utility model provides mainly utilizes transistors couple device (being common optocoupler well known to those skilled in the art) and simple cheap electronic devices and components can realize that the silicon controlled isolation triggers.The silicon controlled insulation triggering circuit that the utility model provides comprises diode D51, resistance R 51, R52, R53, voltage stabilizing part, capacitor C 51, transistors couple device U51, reaches bidirectional triode thyristor TR51; The T2 utmost point of bidirectional triode thyristor TR51 links to each other with an end of AC power and the anode of diode D51 by load simultaneously, and its T1 utmost point connects the other end of AC power; The negative electrode of diode D51 connects the collector electrode of the triode of transistors couple device by resistance R 53; The anode of the diode of transistors couple device connects dc power output end, and its negative electrode links to each other with control signal output ends by resistance R 52, and the emitter of the triode of transistors couple device connects the G utmost point of bidirectional triode thyristor TR51 by resistance R 51; Be connected in after voltage stabilizing part and capacitor C 51 are in parallel between the T1 utmost point of the collector electrode of triode of transistors couple device and bidirectional triode thyristor.
Preferably, the voltage stabilizing part is resistance or voltage-stabiliser tube, referring to Fig. 3, and the circuit diagram of a preferred embodiment of the insulation triggering circuit of the bidirectional triode thyristor that it provides for the utility model, wherein the voltage stabilizing part adopts resistance R 54, and the main effect of divider resistance R54 is a Pliers position voltage.
The silicon controlled insulation triggering circuit that the utility model provides also can be used for one-way SCR, comprises diode D51, resistance R 51, R52, R53, voltage stabilizing part, capacitor C 51, transistors couple device U51, reaches one-way SCR TR51; The anode of one-way SCR TR51 links to each other with an end of AC power and the anode of diode D51 by load simultaneously, and its negative electrode connects the other end of AC power; The negative electrode of diode D51 connects the collector electrode of the triode of transistors couple device by resistance R 53; The anode of the diode of transistors couple device connects dc power output end, its negative electrode links to each other with control signal output ends by resistance R 52, the emitter of the triode of transistors couple device, is connected in after voltage stabilizing part and capacitor C 51 are in parallel between the negative electrode of the collector electrode of triode of transistors couple device and one-way SCR to the silicon controlled gate pole by resistance R 51 orders.Because the less alternating current that is used for of one-way SCR isolates, and its circuit connecting method and above-mentioned bidirectional triode thyristor is the same, so locate to save its circuit diagram.
Again referring to Fig. 3, the operation principle of the insulation triggering circuit that the utility model is provided for the circuit structure of bidirectional triode thyristor below in conjunction with controllable silicon is described below: diode D51 is a direct current with the AC rectification of civil power, resistance R 53 and R54 dividing potential drop, tie point punishment at resistance R 53 and R54 extrudes lower burning voltage to trigger transistors couple device U51, and transistors couple device U51 drives the controllable silicon conducting and isolated controllable silicon simultaneously then.Wherein, the power supply that controllable silicon is used can be got nearby, and it can directly directly be provided by the transistors couple device after the diode rectification dividing potential drop, provides as power M end among the figure.When power supply was in the positive half cycle of alternating current, electric current arrived AC220_N then from AC220_L flow through D51, R53 and R54, and C51 is the power storage energy.When AC power supplies was negative half period, capacitor C 51 began discharge, and the possible path of electric current is R52-R53-D51, because the D51 reverse bias, so negative half-cycle current can not pass through.Therefore, when the conducting of light lotus root, circuits for triggering will be worked, and controllable silicon triggering and conducting loop is the negative pole of positive pole-U51-R51-G-T1-C51 of C51.This circuit utilizes the dividing potential drop of R53 and R54, and high voltage is divided to R53, so can use low withstand voltage common light lotus root.When the light lotus root is opened circuit,, guarantee that light lotus root U51 can be not breakdown because the dividing potential drop effect of R54 can not produce high voltage at the two ends of light lotus root output.
Wherein, diode D51 is the high pressure resistant diode of energy, and for example Lian Jia D51(can use 1N4007) withstand voltage 1000V, it can enough guarantee can be not breakdown when negative half period, thereby circuit can be worked reliably.So electronic devices and components are few in the silicon controlled insulation triggering circuit that the utility model provides, and be lower-cost components and parts, it makes entire circuit simple in structure, and cost is lower.Preferably, capacitor C 51 is a polar capacitor, its positive pole links to each other with the collector electrode of the triode of transistors couple device, its negative pole links to each other with the negative electrode of one-way SCR, with the reliability of better holding circuit work and reduce cost (when controllable silicon was one-way SCR, the catenation principle of capacitor C 51 was identical therewith).
Those skilled in the art know and can adopt other voltage stabilizing circuit to replace above-mentioned voltage stabilizing part, and so that the POWER_M point is stabilized to the certain voltage scope, it is this area common technology means, and it all is included within the protection range of the present utility model.
The silicon controlled insulation triggering circuit that the utility model provides can be applied in the various electrical equipment that need to isolate widely, silicon controlled one end connects uses electric loading, entering water electromagnetic valve for example, it also can be other one or more electrical appliances, thereby realizes the on-off action of safety.And, the silicon controlled insulation triggering circuit will increase more independent current source or increase more rectifier bridge when a plurality of controllable silicon of control in the prior art, so that the circuit load cost is higher, and the circuit that the utility model provides is a plurality of controllable silicons of isolated controlling simultaneously, and the simple cost of circuit is lower.
Preferably, the controllable silicon insulation triggering circuit that the utility model provides also comprises zero cross detection circuit, it is connected in the zero crossing that the control signal front is used to detect alternating current, and those skilled in the art knows various zero cross detection circuits, does not repeat them here its concrete circuit structure.The control signal IC102(11 of MCU), when detecting zero crossing, just provide the pulse signal of low-voltage, when using like this, the power of power supply Power_M can be accomplished littler, thereby the resistance of this divider resistance string of R53 and R54 can be bigger, thereby reduce the stand-by power consumption of circuit, improve the efficient of integrated circuit.
In sum, the insulation triggering circuit that provides of the utility model has the following advantages:
1, circuit is simple, cost is lower.This programme does not need with bidirectional light controlled controllable silicon (solid-state relay), adopt the transistors couple device to get final product, and it need additionally not provide insulating power supply and transformer at outlet side, and do not need rectifier bridge yet, non-insulating power supply and distinctive circuit structure thereof that it relies on the AC input side to obtain, realized the controllable silicon isolated controlling, the components and parts of entire circuit are few and cheap.
2, its can be easily a plurality of controllable silicons of isolated controlling simultaneously.
The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection range of the present utility model.
Claims (6)
1. a silicon controlled insulation triggering circuit is characterized in that, comprises diode D51, resistance R 51, R52, R53, voltage stabilizing part, capacitor C 51, transistors couple device U51, reaches bidirectional triode thyristor TR51; The T2 utmost point of bidirectional triode thyristor TR51 links to each other with an end of AC power and the anode of diode D51 by load simultaneously, and its T1 utmost point connects the other end of AC power; The negative electrode of diode D51 connects the collector electrode of the triode of transistors couple device by resistance R 53; The anode of the diode of transistors couple device connects dc power output end, and its negative electrode links to each other with control signal output ends by resistance R 52, and the emitter of the triode of transistors couple device connects the G utmost point of bidirectional triode thyristor TR51 by resistance R 51; Be connected in after voltage stabilizing part and capacitor C 51 are in parallel between the T1 utmost point of the collector electrode of triode of transistors couple device and bidirectional triode thyristor.
2. insulation triggering circuit as claimed in claim 1 is characterized in that, described voltage stabilizing part is resistance or voltage-stabiliser tube.
3. insulation triggering circuit as claimed in claim 1 is characterized in that, described capacitor C 51 is a polar capacitor, and its positive pole links to each other with the collector electrode of the triode of transistors couple device, and its negative pole extremely links to each other with the T1 of bidirectional triode thyristor.
4. a silicon controlled insulation triggering circuit is characterized in that, comprises diode D51, resistance R 51, R52, R53, voltage stabilizing part, capacitor C 51, transistors couple device U51, reaches one-way SCR TR51; The anode of one-way SCR TR51 links to each other with an end of AC power and the anode of diode D51 by load simultaneously, and its negative electrode connects the other end of AC power; The negative electrode of diode D51 connects the collector electrode of the triode of transistors couple device by resistance R 53; The anode of the diode of transistors couple device connects dc power output end, its negative electrode links to each other with control signal output ends by resistance R 52, the emitter of the triode of transistors couple device, is connected in after voltage stabilizing part and capacitor C 51 are in parallel between the negative electrode of the collector electrode of triode of transistors couple device and one-way SCR to the silicon controlled gate pole by resistance R 51 orders.
5. insulation triggering circuit as claimed in claim 4 is characterized in that, described voltage stabilizing part is resistance or voltage-stabiliser tube.
6. insulation triggering circuit as claimed in claim 4 is characterized in that, described capacitor C 51 is a polar capacitor, and its positive pole links to each other with the collector electrode of the triode of transistors couple device, and its negative pole links to each other with the negative electrode of one-way SCR.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201721305U CN202077009U (en) | 2011-05-26 | 2011-05-26 | Isolating trigger circuit for thyristor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201721305U CN202077009U (en) | 2011-05-26 | 2011-05-26 | Isolating trigger circuit for thyristor |
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| CN202077009U true CN202077009U (en) | 2011-12-14 |
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| CN2011201721305U Expired - Fee Related CN202077009U (en) | 2011-05-26 | 2011-05-26 | Isolating trigger circuit for thyristor |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009742A (en) * | 2013-02-22 | 2014-08-27 | 大连星航机电设备有限公司 | Silicon controlled rectifier trigger |
| CN106788365A (en) * | 2016-01-24 | 2017-05-31 | 广州市金矢电子有限公司 | Half control type device driving method and device, hybrid devices |
| CN106847581A (en) * | 2016-01-24 | 2017-06-13 | 广州市金矢电子有限公司 | Electronic arc eliminating feedback device and arc-control device |
| WO2017144004A1 (en) * | 2016-02-26 | 2017-08-31 | 广州市金矢电子有限公司 | Drive apparatus for semi-controlled device |
| WO2017143586A3 (en) * | 2016-02-26 | 2017-09-28 | 广州市金矢电子有限公司 | Thyristor trigger apparatus |
| CN108512535A (en) * | 2018-03-29 | 2018-09-07 | 华南理工大学 | The thyristor gating circuit compensated using posive temperature coefficient thermistor |
| CN111010160A (en) * | 2020-01-03 | 2020-04-14 | 山西工程技术学院 | Bidirectional thyristor low-temperature trigger device and implementation method |
| CN111614259A (en) * | 2020-06-12 | 2020-09-01 | 广东瑞德智能科技股份有限公司 | Circuit and electric appliance for isolating and controlling high-power load by using silicon controlled rectifier in flyback power supply |
| CN112542036A (en) * | 2020-12-08 | 2021-03-23 | 大力电工襄阳股份有限公司 | High-voltage silicon controlled rectifier wireless trigger equipment |
-
2011
- 2011-05-26 CN CN2011201721305U patent/CN202077009U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009742A (en) * | 2013-02-22 | 2014-08-27 | 大连星航机电设备有限公司 | Silicon controlled rectifier trigger |
| CN106788365A (en) * | 2016-01-24 | 2017-05-31 | 广州市金矢电子有限公司 | Half control type device driving method and device, hybrid devices |
| CN106847581A (en) * | 2016-01-24 | 2017-06-13 | 广州市金矢电子有限公司 | Electronic arc eliminating feedback device and arc-control device |
| WO2017125058A1 (en) * | 2016-01-24 | 2017-07-27 | 广州市金矢电子有限公司 | Electronic arc-extinguishing feedback apparatus and arc-extinguishing apparatus |
| WO2017144004A1 (en) * | 2016-02-26 | 2017-08-31 | 广州市金矢电子有限公司 | Drive apparatus for semi-controlled device |
| WO2017143586A3 (en) * | 2016-02-26 | 2017-09-28 | 广州市金矢电子有限公司 | Thyristor trigger apparatus |
| CN108512535A (en) * | 2018-03-29 | 2018-09-07 | 华南理工大学 | The thyristor gating circuit compensated using posive temperature coefficient thermistor |
| CN108512535B (en) * | 2018-03-29 | 2022-01-18 | 华南理工大学 | Silicon controlled trigger circuit compensated by positive temperature coefficient thermistor |
| CN111010160A (en) * | 2020-01-03 | 2020-04-14 | 山西工程技术学院 | Bidirectional thyristor low-temperature trigger device and implementation method |
| CN111614259A (en) * | 2020-06-12 | 2020-09-01 | 广东瑞德智能科技股份有限公司 | Circuit and electric appliance for isolating and controlling high-power load by using silicon controlled rectifier in flyback power supply |
| CN111614259B (en) * | 2020-06-12 | 2021-09-21 | 广东瑞德智能科技股份有限公司 | Circuit and electric appliance for isolating and controlling high-power load by using silicon controlled rectifier in flyback power supply |
| CN112542036A (en) * | 2020-12-08 | 2021-03-23 | 大力电工襄阳股份有限公司 | High-voltage silicon controlled rectifier wireless trigger equipment |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111214 Termination date: 20160526 |