CN104009113A - Method for manufacturing precision-overprinted selective emitter cell - Google Patents
Method for manufacturing precision-overprinted selective emitter cell Download PDFInfo
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- CN104009113A CN104009113A CN201310191220.2A CN201310191220A CN104009113A CN 104009113 A CN104009113 A CN 104009113A CN 201310191220 A CN201310191220 A CN 201310191220A CN 104009113 A CN104009113 A CN 104009113A
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 99
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 98
- 239000010703 silicon Substances 0.000 claims abstract description 98
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- 238000004458 analytical method Methods 0.000 claims description 29
- 239000003518 caustics Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000000839 emulsion Substances 0.000 claims description 12
- 230000033001 locomotion Effects 0.000 claims description 12
- 238000004587 chromatography analysis Methods 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000009955 starching Methods 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- 238000003854 Surface Print Methods 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 abstract description 18
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 5
- 238000007650 screen-printing Methods 0.000 abstract 3
- 238000010191 image analysis Methods 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000004513 sizing Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F15/00—Screen printers
- B41F15/14—Details
- B41F15/34—Screens, Frames; Holders therefor
- B41F15/36—Screens, Frames; Holders therefor flat
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F33/00—Indicating, counting, warning, control or safety devices
- B41F33/0036—Devices for scanning or checking the printed matter for quality control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method of manufacturing a precision-overprinted selective emitter cell. The method of the invention combines optical positioning and mechanical positioning, precision overprinting between corrosion agent printing and gate line printing is realized through optical positioning, and consistency of printing patterns between silicon wafers is ensured through mechanical position. In optical positioning, the overlapping precision of silicon wafers and a second screen printing plate is checked, and the precision of overprinting is ensured. The screen printing plate is designed into a directional screen printing plate, which enables printed silicon wafers to be directional, facilitates rapid positioning of silicon wafers on a second printing platform and improves the printing efficiency. A second optical camera is set into a three-dimensional camera device, and a three-dimensional image analysis module is arranged in an image analysis and identification system, the sizing amount can be adjusted according to the monitored depths of grooves on different silicon wafers, the precision of overprinting is further improved, and the photoelectric conversion efficiency of the cell is improved.
Description
Technical field
The present invention relates to area of solar cell, be specifically related to a kind of manufacture method of selective emitter battery.
Background technology
In current photovoltaic industry, development high-efficiency battery technology is to improve the key of solar battery efficiency.One of high-efficiency battery technology of comparative maturity is exactly poising property emitter battery.Selective emitter solar battery, because of its structural advantage, can obtain higher short circuit current open circuit voltage and fill factor, curve factor simultaneously, thereby has the focus that becomes research compared with high conversion efficiency.Its structure mainly contains two features: under metal grid lines and near the relatively high and darker heavy diffusion zone of knot of formation doping content; Other positions form the light diffusion zone that doping content is relatively low and knot is more shallow.This structure can reduce the contact resistance of metal and silicon on the one hand, reduces the possibility that metal impurities enter into knot space charge region; Place due to illumination is relatively light phosphorus doping district on the other hand, and this makes surface passivation effect better, and has solved due to the adulterate problem of overweight generation dead layer of N-type doped region, has greatly reduced the compound of minority carrier, has reduced dark current.Realize this structure, the step of most critical is will realize the positively charged metal utmost point to aim at the accurate of heavily doped region, once heavily expand outside region because metal grid lines partly or completely drops on, on the one hand, metal electrode cannot form good ohmic contact with light expansion region, thereby the series resistance that greatly increases battery causes fill factor, curve factor sharply to decline, causes conversion efficiency to decline; On the other hand, because part is light, expand region and covered by electrode, more heavily expand region and become sensitive area, reduced like this effective area of shining light, affected largely the short circuit current of solar cell, thereby reduced its transformation efficiency.Therefore, how realizing metal grid lines is the difficult point that current selective emitter battery moves towards industrialization with accurate aligning of heavily expanding region.
According to tradition, manufacture the typography of crystal-silicon solar cell, the at present domestic automatic press generally adopting has two cameras, printing error between its board is approximately 30 ~ 60 microns, printing error between the different silicon chips of same board is approximately 10 ~ 30 microns, the accumulative total of the various errors such as systematic error that add in addition the error of half tone figure and produce due to the change of the printing parameters such as half tone tension force in printing process, cannot guarantee within the metal grid lines that heavily expands region and make not too wide in the situation that printing drops on heavily expand region completely.
Summary of the invention
The technical issues that need to address of the present invention are to provide a kind of manufacture method of selective emitter battery of accurate chromatography, and the accumulative total printing error of the selective emitter battery of manufacturing by the method can be controlled within 30 microns.
The technical issues that need to address of the present invention are achieved through the following technical solutions:
A manufacture method for the selective emitter battery of accurate chromatography, comprises the following steps successively:
S1. silicon chip is carried out to conventional cleaning, making herbs into wool and growth mask process;
S2. on the first print station that is provided with the first half tone above silicon chip being positioned at and can moves freely with respect to the first half tone, through the first print station and the first half tone, on silicon chip, print corrosive agent after superimposed, wherein the printed pattern of corrosive agent is corresponding with the positive electrode grid line pattern of preprinted, after the silicon dioxide layer of corrosive agent below fully erodes, cleaning silicon chip to be to remove corrosive agent and mechanical damage layer, thereby on silicon chip, forms groove;
S3. silicon chip is put into diffusion furnace and carry out DIFFUSION TREATMENT, after DIFFUSION TREATMENT, silicon chip is immersed in hydrofluoric acid to remove phosphoric acid glass layer and earth silicon mask, with plasma etching technology, remove silicon chip edge PN junction subsequently, then with plasma chemical vapor deposition, at silicon chip, be formed with depositing antireflection film on a side surface of described groove;
S4. a side surface printing back electrode, the back of the body electric field without described groove at silicon chip, and oven dry;
S5. on the second print station that is provided with the second half tone above silicon chip being positioned at and can moves freely with respect to the second half tone, and silicon chip is formed to a reeded side surface towards the second half tone, the second half tone is consistent with the first half tone pattern, by the first optical pick-up apparatus and the second optical pick-up apparatus, take respectively silicon chip and the second half tone to obtain the image information of silicon chip upper groove and the second half tone, by the image transmission obtaining to graphical analysis recognition system, by graphical analysis recognition system, carry out image recognition, analyze, after contrast, calculate the second half tone with respect to the alternate position spike of silicon chip, and described alternate position spike is transferred to control system, by control system, according to described alternate position spike, drive the second print station to move to realize the correction of the second print station position, after the second print station position correction, the second print station and the second half tone are superimposed, print positive electrode grid line,
S6. sintering: make electrode stick to regularly on silicon chip and form ohmic contact by sintering.
Preferably, in described step S1 and S5, silicon chip is positioned on described first, second print station by the backstay being fixed on described first, second print station respectively.Further preferably, described backstay is set screw or screw rod.
Preferably, after control system described in described step S5 drives described the second print station to move, described graphical analysis recognition system also needs the overlapping precision of described silicon chip and described the second half tone to verify.
Further preferably, the step that the overlapping precision of described silicon chip and described the second half tone is verified is: utilize described the first optical pick-up apparatus and described the second optical pick-up apparatus respectively described the second half tone and described silicon chip to be taken again, the image information of acquisition is transferred to graphical analysis recognition system again, by graphical analysis recognition system, identified, analyze, contrast and then judge the second half tone and whether meet predefined precision threshold value with respect to the reposition of silicon chip is poor, in the situation that meeting precision threshold value, judgement just carries out the superimposed of the second print station and the second half tone, otherwise be transferred to described control system by reposition is poor, by described control system, according to poor second print station that again drives of reposition, moved, and after the second print station moves, described graphical analysis recognition system is again carried out and is verified until the second half tone meets precision threshold value with respect to the alternate position spike of silicon chip.
Further preferably, described first, second half tone has directivity.Further preferred, described first, second half tone arranges by the end at thin grid and/or main grid the directivity that characteristic point realizes described first, second half tone.
Further preferably, described the second optical pick-up apparatus is for obtaining the three-dimensional image pickup device of described silicon chip 3-D view; Described graphical analysis recognition system is provided with 3-D view analysis module, by 3-D view analysis module, set, analyze the 3-D view of the described silicon chip coming from three-dimensional image pickup device transmission and calculate thus the mean depth of described the above groove of silicon chip, and the mean depth of described groove is transferred to the controller of emulsion coating machine; Described emulsion coating machine is used for to described the second half tone starching, and described controller is connected with regulating the movement executing mechanism of described emulsion coating machine starching amount, and according to the motion of the mean depth controlled motion actuator of described groove.Still more preferably, the piston actuator that described movement executing mechanism is described emulsion coating machine slurry syringe.
Preferably, silicon chip described in described step S1 also carried out light dope DIFFUSION TREATMENT before growth earth silicon mask.
Compared with prior art, the manufacture method of the selective emitter battery of the accurate chromatography of the present invention has the following advantages:
1. optical alignment and machinery location are combined, half tone and camera are regarded to relatively standing object of reference, by optical alignment, realize the accurate overprinting between corrosive agent printing and grid line printing, by machinery, located the consistency of having guaranteed the printed patterns between silicon chip and silicon chip.
2. in optical alignment, overlapping precision to silicon chip and the second half tone is verified, only have and met default overlapping precision threshold condition, the second print station and the second half tone just can carry out superimposed, otherwise can again drive the second print station to move, and carry out again overlapping precision verification, thereby guaranteed the high accurancy and precision of chromatography.
3. by half tone design is become to the half tone with directivity, make the silicon chip printing out there is directivity, compare with the directive silicon chip of tool not, the directive silicon chip of this tool is more convenient for locating fast on the second print station, improved printing efficiency, meanwhile also can reduce the symmetric requirement of half tone, improve the precision of chromatography.
4. by the second optical camera, be set to three-dimensional image pickup device, and in graphical analysis recognition system, be provided with 3-D view analysis module, can analyze thus the groove mean depth that on silicon chip, corrosion produces, and then according to the starching amount of the depth of groove adjustment gate electrode line on the different silicon chips that monitor, be conducive to improve chromatography precision, both avoided because the very few Chong Kuo of causing of slurry district cannot produce good ohmic contact in Yu Qingkuo district, or also can have been covered by electrode because slurry too much causes Qing Kuo district; This method is conducive to improve the electricity conversion of cell piece.
By the inventive method, can make all deviation accumulations in twice printing (comprising corrosive agent printing and grid line printing) process be controlled within 30 microns, alignment error between silicon chip and silicon chip is controlled within 10 microns, compared with prior art, the precision of chromatography improves greatly.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of positive electrode half tone of the present invention.
Fig. 2 is the another kind of structural representation of positive electrode half tone of the present invention.
In figure: 1, thin grid; 2, main grid; 3, characteristic point.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the specific embodiment of the present invention is described further.Following examples are only for technical scheme of the present invention is more clearly described, and can not limit the scope of the invention with this.
Embodiment 1
The present invention is a kind of manufacture method of selective emitter battery of accurate chromatography, and it comprises the following steps successively:
S1. silicon chip is carried out to conventional cleaning, making herbs into wool and growth mask process.
S2. silicon chip is positioned on the first print station by the backstay being fixed on the first print station, here, the top of the first print station is provided with the first half tone, and the first print station and can moving freely with respect to the first half tone, and backstay can be set screw or screw rod; Through the first print station and the first half tone, on silicon chip, print corrosive agent after superimposed, wherein the printed pattern of corrosive agent is corresponding with the positive electrode grid line pattern of preprinted, after the silicon dioxide layer of corrosive agent below fully erodes, with deionized water cleaning silicon chip to remove corrosive agent and mechanical damage layer, thereby on silicon chip, form groove.
S3. silicon chip is put into diffusion furnace and carry out DIFFUSION TREATMENT, after DIFFUSION TREATMENT, silicon chip is immersed in hydrofluoric acid to remove phosphoric acid glass layer and earth silicon mask, with plasma etching technology, remove silicon chip edge PN junction subsequently, then with plasma chemical vapor deposition, at silicon chip, be formed with depositing antireflection film on a side surface of described groove.
S4. a side surface printing back electrode, the back of the body electric field without described groove at silicon chip, and oven dry.
S5. silicon chip is positioned on the second print station by the backstay being fixed on the second print station, here, the top of the second print station is provided with second half tone consistent with the first half tone pattern, and silicon chip is formed to a reeded side surface towards the second half tone, the second print station can move freely with respect to the second half tone, and backstay can be set screw or screw rod, by the first optical pick-up apparatus and the second optical pick-up apparatus, take respectively silicon chip and the second half tone to obtain the image information of silicon chip upper groove and the second half tone, by the image transmission obtaining to graphical analysis recognition system, by graphical analysis recognition system, carry out image recognition, analyze, after contrast, calculate the second half tone with respect to the alternate position spike of silicon chip, and described alternate position spike is transferred to control system, by control system, according to described alternate position spike, drive the second print station to move to realize the correction of the second print station position, after the second print station position correction, the second print station and the second half tone are superimposed, print positive electrode grid line.Preferably, after described control system drives described the second print station to move, described graphical analysis recognition system also needs the overlapping precision of described silicon chip and described the second half tone to verify.The step of verifying is: utilize described the first optical pick-up apparatus and described the second optical pick-up apparatus respectively described the second half tone and described silicon chip to be taken again, the image information of acquisition is transferred to graphical analysis recognition system again, by graphical analysis recognition system, identified, analyze, contrast and then judge the second half tone and whether meet predefined precision threshold value with respect to the reposition of silicon chip is poor, in the situation that meeting precision threshold value, judgement just carries out the superimposed of the second print station and the second half tone, otherwise be transferred to described control system by reposition is poor, by described control system, according to poor second print station that again drives of reposition, moved, and after the second print station moves, described graphical analysis recognition system is again carried out and is verified until the second half tone meets precision threshold value with respect to the alternate position spike of silicon chip.
S6. sintering: make electrode stick to regularly on silicon chip and form ohmic contact by sintering.
In addition, in step S1, silicon chip also can be after making herbs into wool, also carry out appropriate light dope DIFFUSION TREATMENT before growth earth silicon mask.
Embodiment 2
On the basis of embodiment 1, the preferred embodiments of the present invention are: described first, second half tone has directivity.As depicted in figs. 1 and 2, first, second half tone can arrange the directivity that characteristic point realizes described first, second half tone by the end at thin grid and/or main grid.As shown in Figure 1, characteristic point can be the end of thin grid alligatoring.In Fig. 2, characteristic point is the end of main grid refinement.
Embodiment 3
On the basis of embodiment 2, the preferred embodiments of the present invention are: described the second optical pick-up apparatus is for obtaining the three-dimensional image pickup device of described silicon chip 3-D view; Described graphical analysis recognition system is provided with 3-D view analysis module, by 3-D view analysis module, set, analyze the 3-D view of the described silicon chip coming from three-dimensional image pickup device transmission and calculate thus the mean depth of described the above groove of silicon chip, and the mean depth of described groove is transferred to the controller of emulsion coating machine; Described emulsion coating machine is used for to described the second half tone starching, and described controller is connected with regulating the movement executing mechanism of described emulsion coating machine starching amount, and according to the motion of the mean depth controlled motion actuator of described groove.The movement executing mechanism here can be the piston actuator of described emulsion coating machine slurry syringe.
Above-mentioned each embodiment is to the preferred embodiment of the present invention.It should be pointed out that for those skilled in the art, not departing under the prerequisite of the technology of the present invention principle, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a manufacture method for the selective emitter battery of accurate chromatography, is characterized in that comprising the following steps successively:
S1. silicon chip is carried out to conventional cleaning, making herbs into wool and growth mask process;
S2. on the first print station that is provided with the first half tone above silicon chip being positioned at and can moves freely with respect to the first half tone, through the first print station and the first half tone, on silicon chip, print corrosive agent after superimposed, wherein the printed pattern of corrosive agent is corresponding with the positive electrode grid line pattern of preprinted, after the silicon dioxide layer of corrosive agent below fully erodes, cleaning silicon chip to be to remove corrosive agent and mechanical damage layer, thereby on silicon chip, forms groove;
S3. silicon chip is put into diffusion furnace and carry out DIFFUSION TREATMENT, after DIFFUSION TREATMENT, silicon chip is immersed in hydrofluoric acid to remove phosphoric acid glass layer and earth silicon mask, with plasma etching technology, remove silicon chip edge PN junction subsequently, then with plasma chemical vapor deposition, at silicon chip, be formed with depositing antireflection film on a side surface of described groove;
S4. a side surface printing back electrode, the back of the body electric field without described groove at silicon chip, and oven dry;
S5. on the second print station that is provided with the second half tone above silicon chip being positioned at and can moves freely with respect to the second half tone, and silicon chip is formed to a reeded side surface towards the second half tone, the second half tone is consistent with the first half tone pattern, by the first optical pick-up apparatus and the second optical pick-up apparatus, take respectively silicon chip and the second half tone to obtain the image information of silicon chip upper groove and the second half tone, by the image transmission obtaining to graphical analysis recognition system, by graphical analysis recognition system, carry out image recognition, analyze, after contrast, calculate the second half tone with respect to the alternate position spike of silicon chip, and described alternate position spike is transferred to control system, by control system, according to described alternate position spike, drive the second print station to move to realize the correction of the second print station position, after the second print station position correction, the second print station and the second half tone are superimposed, print positive electrode grid line,
S6. sintering: make electrode stick to regularly on silicon chip and form ohmic contact by sintering.
2. manufacture method as claimed in claim 1, is characterized in that: in described step S1 and S5, silicon chip is positioned on described first, second print station by the backstay being fixed on described first, second print station respectively.
3. manufacture method as claimed in claim 2, is characterized in that: described backstay is set screw or screw rod.
4. manufacture method as claimed in claim 1, is characterized in that: after control system described in described step S5 drives described the second print station to move, described graphical analysis recognition system also needs the overlapping precision of described silicon chip and described the second half tone to verify.
5. manufacture method as claimed in claim 4, it is characterized in that: the step that the overlapping precision of described silicon chip and described the second half tone is verified is: utilize described the first optical pick-up apparatus and described the second optical pick-up apparatus respectively described the second half tone and described silicon chip to be taken again, the image information of acquisition is transferred to graphical analysis recognition system again, by graphical analysis recognition system, identified, analyze, contrast and then judge the second half tone and whether meet predefined precision threshold value with respect to the reposition of silicon chip is poor, in the situation that meeting precision threshold value, judgement just carries out the superimposed of the second print station and the second half tone, otherwise be transferred to described control system by reposition is poor, by described control system, according to poor second print station that again drives of reposition, moved, and after the second print station moves, described graphical analysis recognition system is again carried out and is verified until the second half tone meets precision threshold value with respect to the alternate position spike of silicon chip.
6. manufacture method as claimed in claim 5, is characterized in that: described first, second half tone has directivity.
7. manufacture method as claimed in claim 6, is characterized in that: described first, second half tone arranges by the end at thin grid and/or main grid the directivity that characteristic point realizes described first, second half tone.
8. manufacture method as claimed in claim 6, is characterized in that: described the second optical pick-up apparatus is for obtaining the three-dimensional image pickup device of described silicon chip 3-D view; Described graphical analysis recognition system is provided with 3-D view analysis module, by 3-D view analysis module, set, analyze the 3-D view of the described silicon chip coming from three-dimensional image pickup device transmission and calculate thus the mean depth of described the above groove of silicon chip, and the mean depth of described groove is transferred to the controller of emulsion coating machine; Described emulsion coating machine is used for to described the second half tone starching, and described controller is connected with regulating the movement executing mechanism of described emulsion coating machine starching amount, and according to the motion of the mean depth controlled motion actuator of described groove.
9. manufacture method as claimed in claim 8, is characterized in that: described movement executing mechanism is the piston actuator of described emulsion coating machine slurry syringe.
10. the manufacture method as described in claim 1 to 9 any one, is characterized in that: silicon chip described in described step S1 also carried out light dope DIFFUSION TREATMENT before growth earth silicon mask.
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|---|---|---|---|
| CN201310191220.2A CN104009113B (en) | 2013-05-22 | 2013-05-22 | A kind of manufacture method of the selective emitter battery of accurate chromatography |
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| CN201310191220.2A CN104009113B (en) | 2013-05-22 | 2013-05-22 | A kind of manufacture method of the selective emitter battery of accurate chromatography |
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| CN104009113A true CN104009113A (en) | 2014-08-27 |
| CN104009113B CN104009113B (en) | 2016-06-15 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109360794A (en) * | 2018-10-11 | 2019-02-19 | 华南理工大学 | A kind of crystal silicon photovoltaic electrode of solar battery secondary printing precision visible detection method and device |
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| CN101101936A (en) * | 2007-07-10 | 2008-01-09 | 中电电气（南京）光伏有限公司 | Making method for selective transmission node crystal silicon solar battery |
| CN102673106A (en) * | 2012-05-09 | 2012-09-19 | 华中科技大学 | Silk screen print positioning equipment and method for photovoltaic solar silicon chip |
| CN102956532A (en) * | 2011-08-19 | 2013-03-06 | 考戈奈克斯股份有限公司 | System and method for aligning a wafer for fabrication |
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| CN101101936A (en) * | 2007-07-10 | 2008-01-09 | 中电电气（南京）光伏有限公司 | Making method for selective transmission node crystal silicon solar battery |
| CN102956532A (en) * | 2011-08-19 | 2013-03-06 | 考戈奈克斯股份有限公司 | System and method for aligning a wafer for fabrication |
| CN102673106A (en) * | 2012-05-09 | 2012-09-19 | 华中科技大学 | Silk screen print positioning equipment and method for photovoltaic solar silicon chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109360794A (en) * | 2018-10-11 | 2019-02-19 | 华南理工大学 | A kind of crystal silicon photovoltaic electrode of solar battery secondary printing precision visible detection method and device |
| CN109360794B (en) * | 2018-10-11 | 2023-10-20 | 广东科隆威智能装备股份有限公司 | Visual detection method and device for secondary printing precision of crystalline silicon photovoltaic solar cell electrode |
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| CN104009113B (en) | 2016-06-15 |
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