CN104009105B - 一种线状钙钛矿太阳能电池及其制备方法 - Google Patents
一种线状钙钛矿太阳能电池及其制备方法 Download PDFInfo
- Publication number
- CN104009105B CN104009105B CN201410256186.7A CN201410256186A CN104009105B CN 104009105 B CN104009105 B CN 104009105B CN 201410256186 A CN201410256186 A CN 201410256186A CN 104009105 B CN104009105 B CN 104009105B
- Authority
- CN
- China
- Prior art keywords
- wire
- solar cell
- layer
- titanium dioxide
- perovskite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 86
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 39
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 37
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 37
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 29
- 238000003618 dip coating Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000002105 nanoparticle Substances 0.000 claims abstract description 14
- 230000005525 hole transport Effects 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 238000009987 spinning Methods 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- -1 diacetyl acetone diisopropyl alcohol ester Chemical class 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004744 fabric Substances 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 238000009434 installation Methods 0.000 abstract description 3
- 238000009940 knitting Methods 0.000 abstract description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000010189 synthetic method Methods 0.000 description 3
- 206010013786 Dry skin Diseases 0.000 description 2
- 101100100081 Oryza sativa subsp. japonica TPP3 gene Proteins 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229920005594 polymer fiber Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/53—Photovoltaic [PV] devices in the form of fibres or tubes, e.g. photovoltaic fibres
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410256186.7A CN104009105B (zh) | 2014-06-11 | 2014-06-11 | 一种线状钙钛矿太阳能电池及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410256186.7A CN104009105B (zh) | 2014-06-11 | 2014-06-11 | 一种线状钙钛矿太阳能电池及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104009105A CN104009105A (zh) | 2014-08-27 |
CN104009105B true CN104009105B (zh) | 2016-04-20 |
Family
ID=51369686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410256186.7A Active CN104009105B (zh) | 2014-06-11 | 2014-06-11 | 一种线状钙钛矿太阳能电池及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104009105B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105047822B (zh) * | 2015-06-12 | 2017-12-19 | 苏州捷迪纳米科技有限公司 | 一种柔性纤维状钙钛矿太阳能电池及其制备方法 |
CN105280820B (zh) * | 2015-07-09 | 2017-09-12 | 中南大学 | 一种大面积钙钛矿微纳米线阵列的制备方法及其应用 |
CN105140402A (zh) * | 2015-09-29 | 2015-12-09 | 南京大学昆山创新研究院 | 一种无空穴传输层的钙钛矿太阳能电池及其制备方法 |
EP3168877B1 (en) | 2015-11-13 | 2022-06-22 | SCEYE Inc | A wire shaped coaxial photovoltaic solar cell |
CN105470394B (zh) * | 2015-12-23 | 2019-01-18 | 海安常州大学高新技术研发中心 | 一种防水有机/无机杂化钙钛矿太阳能电池的制备方法 |
JP2019024035A (ja) * | 2017-07-24 | 2019-02-14 | シャープ株式会社 | 光電変換素子の製造方法 |
CN109904323A (zh) * | 2019-03-15 | 2019-06-18 | 上海黎元新能源科技有限公司 | 一种钙钛矿太阳能电池 |
CN112310284B (zh) * | 2019-07-31 | 2023-03-14 | 比亚迪股份有限公司 | 一种管式钙钛矿太阳能电池及其制备方法、太阳能电池组件 |
CN112885910A (zh) * | 2021-01-27 | 2021-06-01 | 香港理工大学 | 一种线形基材上薄膜太阳能电池及其制备方法 |
CN113594371A (zh) * | 2021-07-28 | 2021-11-02 | 西湖大学 | 纤维状有机太阳能电池及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101982895A (zh) * | 2010-10-12 | 2011-03-02 | 复旦大学 | 一种基于碳纳米管纤维的有机太阳能电池及其制备方法 |
CN102522214A (zh) * | 2011-12-09 | 2012-06-27 | 复旦大学 | 一种基于碳纳米管纤维的线状染料敏化太阳能电池及其制备方法 |
CN102522216A (zh) * | 2011-12-12 | 2012-06-27 | 复旦大学 | 一种高性能线状染料敏化太阳能电池的制备方法 |
CN102731949A (zh) * | 2012-05-29 | 2012-10-17 | 复旦大学 | 高度取向碳纳米管/聚合物复合薄膜及其制备方法与应用 |
CN103390508A (zh) * | 2013-07-04 | 2013-11-13 | 复旦大学 | 一种弹性线状染料敏化太阳能电池及其制备方法 |
CN103681886A (zh) * | 2013-12-26 | 2014-03-26 | 中国科学院物理研究所 | 用于钙钛矿基薄膜太阳电池的支架层及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030015728A1 (en) * | 2001-07-17 | 2003-01-23 | Motorola, Inc. | Photonic biasing and integrated solar charging networks for integrated circuits |
-
2014
- 2014-06-11 CN CN201410256186.7A patent/CN104009105B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101982895A (zh) * | 2010-10-12 | 2011-03-02 | 复旦大学 | 一种基于碳纳米管纤维的有机太阳能电池及其制备方法 |
CN102522214A (zh) * | 2011-12-09 | 2012-06-27 | 复旦大学 | 一种基于碳纳米管纤维的线状染料敏化太阳能电池及其制备方法 |
CN102522216A (zh) * | 2011-12-12 | 2012-06-27 | 复旦大学 | 一种高性能线状染料敏化太阳能电池的制备方法 |
CN102731949A (zh) * | 2012-05-29 | 2012-10-17 | 复旦大学 | 高度取向碳纳米管/聚合物复合薄膜及其制备方法与应用 |
CN103390508A (zh) * | 2013-07-04 | 2013-11-13 | 复旦大学 | 一种弹性线状染料敏化太阳能电池及其制备方法 |
CN103681886A (zh) * | 2013-12-26 | 2014-03-26 | 中国科学院物理研究所 | 用于钙钛矿基薄膜太阳电池的支架层及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104009105A (zh) | 2014-08-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104009105B (zh) | 一种线状钙钛矿太阳能电池及其制备方法 | |
Zheng et al. | Self‐powered flexible TiO2 fibrous photodetectors: heterojunction with P3HT and boosted responsivity and selectivity by Au nanoparticles | |
Sajid et al. | NiO@ carbon spheres: A promising composite electrode for scalable fabrication of planar perovskite solar cells at low cost | |
Bai et al. | 3D‐branched ZnO/CdS nanowire arrays for solar water splitting and the service safety research | |
Ramasubbu et al. | Highly interconnected porous TiO2-Ni-MOF composite aerogel photoanodes for high power conversion efficiency in quasi-solid dye-sensitized solar cells | |
Hou et al. | A band‐edge potential gradient heterostructure to enhance electron extraction efficiency of the electron transport layer in high‐performance perovskite solar cells | |
Si et al. | An innovative design of perovskite solar cells with Al2O3 inserting at ZnO/perovskite interface for improving the performance and stability | |
Sun et al. | Enhanced UV-light stability of organometal halide perovskite solar cells with interface modification and a UV absorption layer | |
Salam et al. | Graphene quantum dots decorated electrospun TiO2 nanofibers as an effective photoanode for dye sensitized solar cells | |
Zhu et al. | Mesoporous SnO 2 single crystals as an effective electron collector for perovskite solar cells | |
Etgar et al. | High efficiency quantum dot heterojunction solar cell using anatase (001) TiO2 nanosheets | |
Lv et al. | Highly efficient and completely flexible fiber-shaped dye-sensitized solar cell based on TiO 2 nanotube array | |
Mali et al. | PbS quantum dot sensitized anatase TiO 2 nanocorals for quantum dot-sensitized solar cell applications | |
Yang et al. | Recent progress of g-C3N4 applied in solar cells | |
Tricoli et al. | Ultra-rapid synthesis of highly porous and robust hierarchical ZnO films for dye sensitized solar cells | |
Ji et al. | Highly-ordered TiO2 nanotube arrays with double-walled and bamboo-type structures in dye-sensitized solar cells | |
CN105845443B (zh) | 一种原位制备的碳量子点敏化太阳能电池 | |
Xu et al. | Two‐Dimentional Nanostructured Metal Oxide/Sulfide–Based Photoanode for Photoelectrochemical Water Splitting | |
Lu et al. | Efficient perovskite solar cells based on novel three-dimensional TiO 2 network architectures | |
CN107154460A (zh) | 一种全碳基钙钛矿太阳能电池及其制备工艺 | |
Zhao et al. | Porous anatase TiO2 nanocrystal derived from the metal–organic framework as electron transport material for carbon-based perovskite solar cells | |
Khot et al. | Synthesis, characterization and photoelectrochemical properties of PbS sensitized vertically aligned ZnO nanorods: modified aqueous route | |
Ding et al. | Synthesis of Bi2S3 thin films based on pulse-plating bismuth nanocrystallines and its photoelectrochemical properties | |
Park et al. | Multifunctional Organized Mesoporous Tin Oxide Films Templated by Graft Copolymers for Dye‐Sensitized Solar Cells | |
Shi et al. | Fabrication of Ag2S quantum dots sensitized CdSe photoelectrodes and its photoelectric performance |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230106 Address after: No. 10, Heilongjiang Road, Yantai Economic and Technological Development Zone, Yantai City, Shandong Province, 265599 Patentee after: YANTAI TAYHO ADVANCED MATERIALS Co.,Ltd. Address before: 200433 No. 220, Handan Road, Shanghai, Yangpu District Patentee before: FUDAN University |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: No. 10, Heilongjiang Road, Yantai Economic and Technological Development Zone, Yantai City, Shandong Province, 265599 Patentee after: Taihe New Material Group Co.,Ltd. Address before: No. 10, Heilongjiang Road, Yantai Economic and Technological Development Zone, Yantai City, Shandong Province, 265599 Patentee before: YANTAI TAYHO ADVANCED MATERIALS Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder |