CN103997223A - Synchronous rectification driving circuit - Google Patents
Synchronous rectification driving circuit Download PDFInfo
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- CN103997223A CN103997223A CN201410209133.XA CN201410209133A CN103997223A CN 103997223 A CN103997223 A CN 103997223A CN 201410209133 A CN201410209133 A CN 201410209133A CN 103997223 A CN103997223 A CN 103997223A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a synchronous rectification driving circuit. The synchronous rectification driving circuit comprises four MOS tubes connected to a power source end in parallel. The MOS tube a and the MOS tube b are connected with a power source. The four MOS tubes are connected with the primary level of a transformer, the secondary level dotted terminal of the transformer is connected with a synchronous rectification tube a and is connected with an output filter inductor in series, a secondary center tap of the transformer is connected with a set of output filter capacitors and a load in parallel, or the secondary center tap of the transformer is connected with the output filter inductor in series, and then the secondary center tap of the transformer and the synchronous rectification tube a are connected with the output filter capacitors and the load in parallel. The secondary non-dotted terminal of the transformer and a node between the synchronous rectification tube a and the output filter inductor are connected with the synchronous rectification tube b. An active pole voltage conditioning circuit is connected between the secondary non-dotted terminal of the transformer and the synchronous rectification tube a in parallel. An intelligent synchronous rectification control chip IR1167 is connected between the synchronous rectification tube b and the active pole voltage conditioning circuit in parallel. The combined circuit improves the stability of synchronous rectification driving, and the synchronous rectification tube error movement caused by parasitic oscillation is avoided.
Description
Technical field
The present invention relates to field of switch power, particularly the synchronous rectification driving circuit in Switching Power Supply.
Background technology
In input high pressure, output low-voltage, high-current occasion, generally adopt full-wave rectifying circuit as shown in Figure 1, in a half cycle, electric current flows through rectifier diode 120 (or 121), and in another half cycle electric current another rectifier diode 121 (or 120) of flowing through.For bridge rectifier, full-wave rectifying circuit has been saved the rectifying device of half, commutating circuit has also lacked tube voltage drop one time, therefore be widely used in exporting the occasion of low pressure, because single diode flow conductivity is limited, output rectifier diode 120 and 121 is generally by multiple diodes in parallels.But because the conduction voltage drop of rectifier diode is higher, fast recovery diode (FRD) or Ultrafast recovery diode (SRD) can reach 1.0～1.2V, even the Schottky diode of low pressure drop (SBD), also can produce the pressure drop of about 0.6V, this just makes output rectification circuit loss increase, power-efficient reduces, and that embodies in this loss of low-voltage, high-current occasion is particularly evident.And the converter of employing synchronous rectification, the rectifier loss can greatly reduce the large electric current of output time.
Synchronous rectification is to replace traditional rectifier diode to reduce rectifier loss with the extremely low power MOSFET of On-resistance, adopt the full-wave rectification of synchronous rectification as shown in Figure 2, wherein 122 and 123 is synchronous rectification MOSFET, what when large electric current, its conduction voltage drop will be low compared with diode is many, as the model MOSFET that is FQP140N03L, conduction impedance only has 3.8m Ω, conduction voltage drop when output current is 20A is 76mV, therefore adopts low-voltage power MOSFET can greatly improve the delivery efficiency of low-voltage, high-current converter as rectifying device.
The type of drive of synchronous rectifier is also divided into two kinds substantially, one is with coupled apparatus, former limit handover information to be passed to secondary to control synchronous rectifier switch, conventionally utilize two current sensors, the driver of two high-speed comparators and two large electric currents, low delay, this has just increased the complexity of converter, cost is higher, and the time delay of coupled apparatus makes synchronous rectification low-response in addition, and more device has reduced control circuit reliability.
Relatively, another kind does not rely on former limit and drives the secondary synchronous rectification mode of signal more welcome.The basic skills of secondary synchronous rectification is the working method of simulation Schottky diode, under reverse voltage, turn-offs, and under forward voltage, connects.Fig. 3 is phase-shifted full-bridge converter work schedule oscillogram, drives the synchronous rectifier a122 of signal and 123 work schedule in order to not rely on former limit in key diagram 2.T
1before moment, metal-oxide-semiconductor 101,102 is open-minded, metal-oxide-semiconductor 100 and 103 turn-offs, and primary current flows back to input negative terminal by the anode of inputting through metal-oxide-semiconductor 101, transformer 110, metal-oxide-semiconductor 102, and transformer secondary induced voltage is lower just upper negative, the reverse-biased cut-off of body diode of synchronous rectifier a122, drain-source voltage V
dSfor high level, the body diode positively biased conducting of synchronous rectifier b123, electric current flows through body diode, and the source voltage of synchronous rectifier b123 is higher than drain voltage, i.e. V
dSbecome a negative value.T
1moment metal-oxide-semiconductor 102 turn-offs 100 conductings, and transformer primary side is busbar voltage, and transformer secondary induced voltage disappears, and the body diode of synchronous rectifier a122 and b123 does not bear positive bias-voltage.T
2moment metal-oxide-semiconductor 103 is opened 101 shutoffs, and primary current flows back to input negative terminal by the anode of inputting through metal-oxide-semiconductor 100, transformer 110, metal-oxide-semiconductor 103, and transformer secondary induced voltage is upper just lower negative, the reverse-biased cut-off of body diode of synchronous rectifier b123, drain-source voltage V
dSfor high level, 122 body diode positively biased conducting.T
3moment 100 is turn-offed 102 conductings, and transformer primary side is no-voltage, and transformer secondary induced voltage disappears, and the body diode of synchronous rectifier a122 and b123 does not bear positive bias-voltage.Follow-up work sequential similarly, repeats no more here.
T
1before moment, metal-oxide-semiconductor 101,102 is open-minded, metal-oxide-semiconductor 100 and 103 turn-offs, and primary current flows back to input negative terminal by the anode of inputting through metal-oxide-semiconductor 101, transformer 110, metal-oxide-semiconductor 102, and transformer secondary induced voltage is lower just upper negative, the reverse-biased cut-off of body diode of synchronous rectifier a122, drain-source voltage V
dSfor high level, the body diode positively biased conducting of synchronous rectifier b123, electric current flows through body diode, and the source voltage of synchronous rectifier b123 is higher than drain voltage, i.e. V
dSbecome a negative value.T
1moment metal-oxide-semiconductor 102 turn-offs 100 conductings, and transformer primary side is busbar voltage, and transformer secondary induced voltage disappears, and synchronous rectifier a122 and 123 body diode do not bear positive bias-voltage.T
2moment metal-oxide-semiconductor 103 is opened 101 shutoffs, and primary current flows back to input negative terminal by the anode of inputting through metal-oxide-semiconductor 100, transformer 110, metal-oxide-semiconductor 103, and transformer secondary induced voltage is upper just lower negative, the reverse-biased cut-off of body diode of synchronous rectifier b123, drain-source voltage V
dSfor high level, the body diode positively biased conducting of synchronous rectifier a122.T
3moment metal-oxide-semiconductor 100 turn-offs 102 conductings, and transformer primary side is no-voltage, and transformer secondary induced voltage disappears, and the body diode of synchronous rectifier a122 and b123 does not bear positive bias-voltage.
Intelligent synchronization commutation technique is just based on the work of above-mentioned operation principle control rectifier switch pipe, and its logical drain-source voltage that detects rectifier switch pipe, with two level threshold (V
tH1and V
tH2) relatively, as Fig. 4, when | V
dS| >|V
tH2| time open switching tube, as | V
dS| <|V
tH1| time on-off switching tube.After switching tube conducting, source electrode can drop to R to drain voltage
dSoni
d, and now between transformer leakage inductance and primary switch pipe output capacitance, can produce parasitic concussion, cause having voltage ring on rectifier switch pipe and can make V
dSlevel drops to | V
tH1|, may cause mistake to be turn-offed.
Summary of the invention
The object of the present invention is to provide a kind of intelligent synchronization rectification drive circuit for secondary synchronous rectifier, technical problem to be solved is to improve by increasing simple analog circuit the stability that synchronous rectification drives, and avoids the synchronous rectifier misoperation causing due to parasitic oscillation.
The object of the invention to solve the technical problems realizes by the following technical solutions.
A kind of synchronous rectification driving circuit, comprises four metal-oxide-semiconductor a, the metal-oxide-semiconductor b, metal-oxide-semiconductor c, the metal-oxide-semiconductor d that are connected in power end in parallel,
The source termination power of drain terminal, metal-oxide-semiconductor c and the metal-oxide-semiconductor d of described metal-oxide-semiconductor a and metal-oxide-semiconductor b, the drain terminal of the source of described metal-oxide-semiconductor a and metal-oxide-semiconductor c connects the Same Name of Ends of primary, and the drain terminal of the source of described metal-oxide-semiconductor b and metal-oxide-semiconductor d connects the non-same polarity of primary;
The termination secondary of the same name of described transformer together walks rectifying tube a, and synchronous rectifier a is connected in series one group output filter capacitor in parallel with transformer secondary output centre cap and load after an output inductor; Or transformer secondary output centre cap is connected in series an output inductor, synchronous rectifier a one group output filter capacitor in parallel with output inductor and load;
Node between secondary non-same polarity and synchronous rectifier a and the output inductor of described transformer meets a synchronous rectifier b;
Between the secondary non-same polarity of described transformer and synchronous rectifier a, be connected in parallel to source voltage modulate circuit; Described synchronous rectifier b and have and be connected in parallel to intelligent synchronization rectification control chip IR1167 between source voltage modulate circuit.
Further, the termination secondary of the same name of described transformer together walks rectifying tube a, and the source of synchronous rectifier a connects the secondary Same Name of Ends of transformer, and drain terminal connects respectively source voltage modulate circuit, synchronous rectifier b and output inductor.
Further, the source of described synchronous rectifier b connects the secondary non-same polarity of transformer, and drain terminal connects respectively the node between intelligent synchronization rectification control chip IR1167 and synchronous rectifier a and output inductor; Grid termination intelligent synchronization rectification control chip IR1167.
Further, described source voltage modulate circuit is made up of a RC filter circuit and a high value voltage conditioning resistance, and described RC filtered electrical routing capacitance and resistance compose in parallel.
Further, the source of the described electric capacity being connected in parallel and resistance one end and synchronous rectifier b is joined, and the other end connects respectively high value voltage conditioning resistance to the node between drain terminal and the output inductor of synchronous rectifier a and intelligent synchronization rectification control chip IR1167.
As shown from the above technical solution, the present invention has following beneficial effect:
According to the detection principle of full-wave fairing attachment of the present invention and intelligent synchronization commutation controller, for eliminating the misoperation that turns on and off moment, at MOSFET source electrode test side serial connection source electrode filter circuit, sampled level is carried out to filtering, the level fluctuation that parasitic oscillation causes when reducing synchronous rectifier conducting.
Described source electrode filter circuit is capacitance resistance ware, composed in parallel by electric capacity and resistance, described RC parallel circuit one end connects described source voltage, the other end connects the source level test side of intelligent synchronization rectification driving chip, by regulating resistance and capacitance, regulate the filter effect to source level vibration.
After further elimination synchronous rectifier (as a122) is opened, the mistake that the voltage oscillation that opposite side synchronous rectifier (as b123) shutdown moment produces causes is turn-offed, the source level test side of described intelligent synchronization commutation controller is connected to the drain electrode of opposite side synchronous rectifier (as b123) by a high resistance measurement, V when opposite side synchronous rectifier (as b123) turn-offs
dScan charge to the capacitor in described source electrode filter circuit by high resistance measurement, raise the level of intelligent synchronization commutation controller source electrode test side, improve opposite side synchronous rectifier (as b123) shutdown moment intelligent synchronization commutation controller anti-interference.
The present invention adopts increases source voltage modulate circuit between synchronous rectification driving governor IR1167 source voltage test side and synchronous rectifier source electrode, in the time that turn-offing, opposite side synchronous rectifier produces parasitic oscillation while being delivered to current synchronous rectifier source electrode, can eliminate the higher-order of oscillation of rectifying tube source level through RC filter circuit in source voltage modulate circuit, the high resistance measurement that is simultaneously connected to the drain electrode of opposite side synchronous rectifier can be raised intelligent synchronization commutation controller source level test side voltage, increase the antijamming capability of intelligent synchronization commutation controller, thereby avoid the misoperation causing due to parasitic oscillation.
IR1167 intelligent drives control mode of the present invention is in conjunction with the source voltage modulate circuit increasing, be can be used in the low-voltage, high-current all-wave circuit of synchronous rectification of phase-shifted full-bridge converter secondary, also can be for the all-wave synchronous rectification occasion of other topological transformation device, for improving converter rectification efficiency.
Brief description of the drawings
Fig. 1 is the full-bridge converter full-wave rectifying circuit schematic diagram of non-synchronous rectification;
Fig. 2 is the full-bridge converter full-wave rectifying circuit schematic diagram of synchronous rectification;
Fig. 3 is full-bridge converter synchronous rectification work schedule schematic diagram;
Fig. 4 is intelligent synchronization commutation controller detection threshold schematic diagram;
Fig. 5 is phase-shifted full-bridge converter secondary synchronous rectification driving circuit schematic diagram;
Fig. 6 is that source voltage modulate circuit is applied schematic diagram in full-bridge converter synchronous commutating control circuit;
Fig. 7 is the another kind of execution mode schematic diagram of phase-shifted full-bridge converter secondary synchronous rectification driving circuit;
Fig. 8 is source voltage modulate circuit composition schematic diagram;
Fig. 9-A does not have the synchronous rectification of source voltage modulate circuit to drive signal and corresponding V
dS(taking synchronous rectifier a122 as example) oscillogram;
Fig. 9-B is two-way synchronous rectifier drive signal waveform figure;
Figure 10-A has the synchronous rectification of source voltage modulate circuit to drive signal and V
dS(taking synchronous rectifier a122 as example) oscillogram;
Figure 10-B is two-way synchronous rectifier drive signal waveform figure.
Primary clustering symbol description:
100, metal-oxide-semiconductor a; 101, metal-oxide-semiconductor b; 102, metal-oxide-semiconductor c; 103, metal-oxide-semiconductor d; 110～transformer; 120,121～rectifier diode; 122～synchronous rectifier a, 123～synchronous rectifier b; 130～output inductor; 140～output filter capacitor; 150～load; 160～source voltage modulate circuit; 161,163～resistance; 162～electric capacity; Vi～input voltage; Np～transformer primary side winding; Ns1～transformer secondary winding 1; Ns2～transformer secondary winding 2; Vo～output voltage; V
g-100, V
g-101, V
g-102, V
g-103the driving signal of～full bridge power metal-oxide-semiconductor; V
dS-122, V
dS-123～synchronous rectifier 122,123 two ends drain-source voltages; V
g-122, V
g-123the gate drive signal s of～synchronous rectifier 122,123; R
dSonthe conduction impedance of～synchronous rectifier; I
dthe through-flow electric current of～synchronous rectifier; The rectification of VD～intelligent synchronization drives chip drain electrode level detection end; The rectification of VS～intelligent synchronization drives chip source electrode level detection end; PWM～synchronous rectifier drives.
Embodiment
In following embodiment, will describe in detail at practical application waveform with the present invention, for making subject matter more outstanding, below will no longer specifically describe transformer (110) front end for the known phase whole-bridging circuit operation principle of technical staff.
Shown in Fig. 5, the present invention is at phase-shifted full-bridge converter secondary synchronous rectification driving circuit schematic diagram.
This synchronous rectification driving circuit, comprise four full bridge power metal-oxide-semiconductors that are connected in power end in parallel, comprise metal-oxide-semiconductor a100, metal-oxide-semiconductor b101, metal-oxide-semiconductor c102, metal-oxide-semiconductor d103, wherein, the source termination power of drain terminal, metal-oxide-semiconductor c102 and the metal-oxide-semiconductor d103 of metal-oxide-semiconductor a100 and metal-oxide-semiconductor b101, the drain terminal of the source of metal-oxide-semiconductor a100 and metal-oxide-semiconductor c102 connects the Same Name of Ends of primary, and the drain terminal of the source of metal-oxide-semiconductor b101 and metal-oxide-semiconductor d103 connects the non-same polarity of primary; The termination secondary of the same name of described transformer together walks rectifying tube a122, and synchronous rectifier a122 is connected in series the rear one group output filter capacitor 140 in parallel with transformer secondary output centre cap of an output inductor 130 and load 150; The termination secondary of the same name of transformer together walks rectifying tube a122, and synchronous rectifier a122 is connected in series the rear one group output filter capacitor 140 in parallel with transformer secondary output centre cap of an output inductor 130 and load 150; Node between the secondary non-same polarity of transformer and synchronous rectifier a122 and output inductor 130 meets a synchronous rectifier b123; Between the secondary non-same polarity of transformer and synchronous rectifier a122, be connected in parallel to source voltage modulate circuit 160; Described synchronous rectifier b123 and have and be connected in parallel to intelligent synchronization rectification control chip IR1167170 between source voltage modulate circuit 160.
As shown in Figure 6, the source of synchronous rectifier a122 connects the secondary Same Name of Ends of transformer, and drain terminal connects respectively source voltage modulate circuit 160, synchronous rectifier b123 and output inductor 130.The source of synchronous rectifier b123 connects the secondary non-same polarity of transformer, and drain terminal connects respectively the node between intelligent synchronization rectification control chip IR1167170 and synchronous rectifier a122 and output inductor 130; Grid termination intelligent synchronization rectification control chip IR1167170.
As shown in Figure 7, another connection of this circuit is, the termination secondary of the same name of transformer together walks rectifying tube a122, and transformer secondary output centre cap is connected in series an output inductor 130, synchronous rectifier a122 one group output filter capacitor 140 in parallel with output inductor 130 and load 150.
As shown in Figure 8, source voltage modulate circuit 160 is made up of a RC filter circuit and a high value voltage conditioning resistance 161, and described RC filtered electrical routing capacitance 162 and resistance 163 compose in parallel.See shown in Fig. 6, Fig. 7, the source of the electric capacity 162 being connected in parallel and resistance 163 one end and synchronous rectifier b123 is joined, the other end connects respectively high value voltage conditioning resistance 161 to the node between drain terminal and the output inductor 130 of synchronous rectifier a122, and intelligent synchronization rectification control chip IR1167170.
The drain voltage of synchronous rectifier of the present invention is directly connected to the drain voltage test side of intelligent drives control chip, and synchronous rectifier source voltage and opposite side synchronous rectifier drain voltage export the source voltage test side of intelligent drives control chip to after source voltage modulate circuit.Intelligent synchronization rectification drives chip to control the shutoff of secondary synchronous rectifier and open-minded according to synchronous rectifier drain electrode and source electrode test side voltage, will introduce in detail its operation principle below.
Intelligent synchronization rectification drives chip 170 to select IR1167, and chip is by detecting the drain-source voltage of rectifier switch pipe, with 3 internal threshold level V
tH1, V
tH2and V
tH3relatively, select suitable opportunity, allow synchronous rectifier turn on and off, as shown in Figure 4, when | V
dS| >|V
tH2| time open switching tube, as | V
dS| <|V
tH1| time on-off switching tube, as | V
dS| >|V
tH3| in time, resets.What detect due to intelligent commutation technique is secondary switch pipe both end voltage, does not rely on primary control signal completely, can work in and determine frequency and two kinds of patterns of frequency conversion, applying flexible.
After switching tube conducting, source electrode drops to R to drain voltage
dSoni
d, now between transformer leakage inductance and switching tube parasitic capacitance, can produce parasitic concussion, cause having voltage ring on rectifier switch pipe and can make V
dSlevel drops to V
tH1cause mistake to be turn-offed, therefore chip internal adopts dedicated logic circuit (MOT and t
blank) prevent the misoperation that causes of shake.MOT is used for setting minimum ON time, and the parasitism while preventing conducting shakes the mistake causing and turn-offs, and blanking time t
blankfor prevent rectifying tube close having no progeny vibration cause open by mistake logical.MOT and t
blankin a switch periods, all only occur once, work as V
dSreach V
tH3(t
blankfinish) after chip reset, for next switch periods ready.
Because resonance full-bridge topology exists resonant process and duty-cycle loss, and in this process secondary synchronization rectifying tube in while conducting state, in Fig. 3, t
3moment, synchronous rectifier b123 was open-minded, and opposite side synchronous rectifier a122 is at t
4moment just turn-offs, at t
3～t
4period resonance full-bridge secondary synchronization rectifying tube a122 and b123 conducting simultaneously afterflow.
At t
3moment, the V of synchronous rectifier b123
dSbecome negative level from a very high positive level, body diode becomes forward conduction from reverse cut-off, part freewheel current is by the body diode that flows through synchronous rectifier a122 through transformer Ns1 winding, because the voltage ring meeting of circuit parasitic parameter generating on synchronous rectifier a122 causes intelligent synchronization rectification to drive chip from misoperation and turn-off in advance synchronous rectifier a122, and t
1when moment synchronous rectifier a122 conducting, the MOT of IR1167 internal programmable (Minimum on time) time maximum is only 3us, at the switching frequency application scenario of 100kHz, t
3moment all, more than 4us, that is to say that this intelligent synchronization rectification drives the MOT protection logic of built-in chip type for t
3the mistake of moment synchronous rectifier a122 is turn-offed helpless.
Just had thus the source voltage modulate circuit 160 shown in Fig. 5, this circuit is made up of a RC filter circuit (being composed in parallel by electric capacity 162 and resistance 163) and a high value voltage conditioning resistance 161, as shown in Figure 6.Electric capacity 162 and resistance 163 compose in parallel RC filter circuit, the source electrode of synchronous rectifier is linked in one end, the other end is linked the source level test side of intelligent synchronization rectification driving chip, is used for reducing the impact of synchronous rectifier source level vibration on intelligent synchronization rectification driving chip.In addition, for avoiding opposite side synchronous rectifier at t
3the vibration producing when moment opens causes intelligent synchronization rectification to drive chip to turn-off synchronous rectifier by mistake, drive the source level conditioning resistance 161 that connects a high value between chip source electrode level detection end and the drain electrode of opposite side synchronous rectifier in intelligent synchronization rectification, this resistance and resistance 163 form again potential-divider network, and this potential-divider network makes the V of opposite side synchronous rectifier
dSdrive the source level test side of chip to produce a component of voltage, the V of this component of voltage and this side synchronous rectifier in the rectification of this side intelligent synchronization
dSstack, makes t
3moment intelligent synchronization rectification drives the detected V of chip
dSwill be much larger than its shutoff threshold value V
tH1, adjustable this stack component of resistance of regulating resistance 161 and resistance 163.Electric capacity 162 divides effects another and resistance 161 and 163 formation low pass filters here, and it also has certain energy storage effect simultaneously.Due to the existence of electric capacity 162, make t
3moment opposite side synchronous rectifier both sides V
dSwhen disappearance, this stack component can not disappear at once, guarantees t
3moment opposite side synchronous rectifier is opened moment, and the rectification of this side intelligent synchronization drives chip can not be interfered and misoperation.
Mentality of designing of the present invention is: intelligent synchronization rectification drives chip by detecting the V of synchronous rectifier
dScontrol its conducting and shutoff, after synchronous rectifier b123 opens, only need maintenance-V
dSbe greater than V
tH1just can maintain the opening state of synchronous rectifier b123, keep the difference of synchronous rectifier b123 source electrode (S) voltage and drain electrode (D) voltage to be greater than V
tH1.Consider the V of synchronous rectifier a122
dSwith t
3the time tagmeme relation that moment synchronous rectifier b123 drives, by the V of synchronous rectifier a122
dSthe dividing potential drop low-pass filter network forming through resistance 161, electric capacity 162 and resistance 163 is connected to the source level test side of intelligent synchronization rectification driving chip, the source level test side that the filter network that the source electrode (S) of synchronous rectifier b123 also forms through electric capacity 162, resistance 163 is linked intelligent synchronization rectification control chip, as shown in Figure 8 (taking synchronous rectifier b123 as example).
It is 13.6V that the present invention is applied in an output voltage, and in the power module outlet side circuit of synchronous rectification of power output 2kW, Fig. 9-A is that the synchronous rectification that does not add source voltage modulate circuit drives signal and V
dS(taking synchronous rectifier a122 as example), Fig. 9-B is that two-way synchronous rectifier drives signal, and the ON time of visible two-way synchronous rectifier (122 and 123) does not have overlapping, exports full-load current and reach 147A in this case, actual measurement full load efficiency is 88%, and loss reaches 240W.Figure 10-A has the synchronous rectification of source voltage modulate circuit to drive signal and V
dS(taking synchronous rectifier a122 as example), Figure 10-B is that two-way synchronous rectifier drives signal, now the ON time of two-way synchronous rectifier (synchronous rectifier a122 and synchronous rectifier b123) has overlapping, under same loading condition, recording full load efficiency reaches more than 93%, more than loss has reduced 100W, there is good economic benefit.
This programme is the drain-source voltage by detecting rectifier switch pipe, select suitable opportunity, allow synchronous rectification switch pipe turn on and off, simplify independent-excited circuit of synchronous rectification, improve the rectification efficiency of synchronous rectification, can be applied in easily in forward converter, anti exciting converter, half-bridge converter, full-bridge converter and controlled resonant converter and replace diode rectification, there is good generalization.
The foregoing is only one embodiment of the present invention, it not whole or unique execution mode, the conversion of any equivalence that those of ordinary skill in the art take technical solution of the present invention by reading specification of the present invention, is claim of the present invention and contains.
Claims (5)
1. a synchronous rectification driving circuit, comprises four metal-oxide-semiconductor a (100), the metal-oxide-semiconductor b (101), metal-oxide-semiconductor c (102), the metal-oxide-semiconductor d (103) that are connected in power end in parallel, it is characterized in that,
The source termination power of drain terminal, metal-oxide-semiconductor c (102) and the metal-oxide-semiconductor d (103) of described metal-oxide-semiconductor a (100) and metal-oxide-semiconductor b (101), the drain terminal of the source of described metal-oxide-semiconductor a (100) and metal-oxide-semiconductor c (102) connects the Same Name of Ends of primary, and the drain terminal of the source of described metal-oxide-semiconductor b (101) and metal-oxide-semiconductor d (103) connects the non-same polarity of primary;
The termination secondary of the same name of described transformer together walks rectifying tube a (122), one group output filter capacitor in parallel with transformer secondary output centre cap (140) and load (150) after synchronous rectifier a (122) serial connection one output inductor (130); Or transformer secondary output centre cap is connected in series an output inductor (130), synchronous rectifier a (122) one group output filter capacitor in parallel with output inductor (130) (140) and load (150);
Node between the secondary non-same polarity of described transformer and synchronous rectifier a (122) and output inductor (130) meets a synchronous rectifier b (123);
Between the secondary non-same polarity of described transformer and synchronous rectifier a (122), be connected in parallel to source voltage modulate circuit (160); Described synchronous rectifier b (123) and have and be connected in parallel to intelligent synchronization rectification control chip IR1167 (170) between source voltage modulate circuit (160).
2. a kind of synchronous rectification driving circuit according to claim 1, it is characterized in that, the termination secondary of the same name of described transformer together walks rectifying tube a (122), the source of synchronous rectifier a (122) connects the secondary Same Name of Ends of transformer, and drain terminal connects respectively source voltage modulate circuit (160), synchronous rectifier b (123) and output inductor (130).
3. a kind of synchronous rectification driving circuit according to claim 1, it is characterized in that, the source of described synchronous rectifier b (123) connects the secondary non-same polarity of transformer, and drain terminal connects respectively the node between intelligent synchronization rectification control chip IR1167 (170) and synchronous rectifier a (122) and output inductor (130); Grid termination intelligent synchronization rectification control chip IR1167 (170).
4. a kind of synchronous rectification driving circuit according to claim 1, it is characterized in that, described source voltage modulate circuit (160) is made up of a RC filter circuit and a high value voltage conditioning resistance (161), and described RC filtered electrical routing capacitance (162) and resistance (163) compose in parallel.
5. according to a kind of synchronous rectification driving circuit described in claim 1 or 4, it is characterized in that, the source of the described electric capacity being connected in parallel (162) and resistance (163) one end and synchronous rectifier b (123) is joined, and the other end connects respectively high value voltage conditioning resistance (161) to node and intelligent synchronization rectification control chip IR1167 (170) between drain terminal and the output inductor (130) of synchronous rectifier a (122).
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018510603A (en) * | 2015-03-09 | 2018-04-12 | フロニウス・インテルナツィオナール・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングＦｒｏｎｉｕｓ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｇｍｂｈ | Circuit device with transformer with center tap and output voltage measurement |
| CN108667302A (en) * | 2017-03-28 | 2018-10-16 | 杰华特微电子（杭州）有限公司 | A kind of isolated switching circuit and its control method |
| CN110391759A (en) * | 2018-04-20 | 2019-10-29 | 意法半导体股份有限公司 | Circuit of synchronous rectification, corresponding device and method |
| CN111064366A (en) * | 2019-12-11 | 2020-04-24 | 矽力杰半导体技术(杭州)有限公司 | Control circuit and method and resonance conversion module |
| CN114513131A (en) * | 2022-01-13 | 2022-05-17 | 连云港杰瑞电子有限公司 | Compensation system suitable for problem of early turn-off of secondary rectifier tube of converter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2018510603A (en) * | 2015-03-09 | 2018-04-12 | フロニウス・インテルナツィオナール・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングＦｒｏｎｉｕｓ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｇｍｂｈ | Circuit device with transformer with center tap and output voltage measurement |
| CN108667302A (en) * | 2017-03-28 | 2018-10-16 | 杰华特微电子（杭州）有限公司 | A kind of isolated switching circuit and its control method |
| CN108667302B (en) * | 2017-03-28 | 2019-07-16 | 杰华特微电子（杭州）有限公司 | A kind of isolated switching circuit and its control method |
| CN110391759A (en) * | 2018-04-20 | 2019-10-29 | 意法半导体股份有限公司 | Circuit of synchronous rectification, corresponding device and method |
| CN111064366A (en) * | 2019-12-11 | 2020-04-24 | 矽力杰半导体技术(杭州)有限公司 | Control circuit and method and resonance conversion module |
| CN111064366B (en) * | 2019-12-11 | 2021-03-09 | 矽力杰半导体技术(杭州)有限公司 | Control circuit and method and resonance conversion module |
| CN114513131A (en) * | 2022-01-13 | 2022-05-17 | 连云港杰瑞电子有限公司 | Compensation system suitable for problem of early turn-off of secondary rectifier tube of converter |
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