CN103996774A - Vertical type light emitting diode with current guiding structure - Google Patents
Vertical type light emitting diode with current guiding structure Download PDFInfo
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- CN103996774A CN103996774A CN201310054974.3A CN201310054974A CN103996774A CN 103996774 A CN103996774 A CN 103996774A CN 201310054974 A CN201310054974 A CN 201310054974A CN 103996774 A CN103996774 A CN 103996774A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Engineering & Computer Science (AREA)
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Abstract
The invention provides a vertical type light emitting diode with a current guiding structure, wherein the vertical type light emitting diode belongs to the technology of controlling the currents of semiconductor elements like a light emitting diode and the like. In some embodiments, a current guiding structure having an adjacent high-low contact zone; in some embodiment, a second current path besides a current path between an n contact welding pad and a substrate; and in some embodiments, a current guiding structure and a second current path are simultaneously provided.
Description
Technical field
The application's case is the U.S. patent application case the 13/161st of application on June 15th, 2011, the cip application (continuation-in-part) of No. 254 (being hereinafter referred to as with ' 254 case), and ' 254 case is the U.S. patent application case the 12/823rd of application on June 25th, 2010, the continuity case (continuation) of No. 866 (being hereinafter referred to as with ' 866 case), ' 866 case has been announced at present as United States Patent (USP) the 8th, 003, No. 994, and ' 866 case is the U.S. patent application case the 12/136th for application on June 10th, 2008, the segmented speech (division) of No. 547 (being hereinafter referred to as with ' 547 case), ' 547 case has been announced at present as United States Patent (USP) the 7th, 759, No. 670, and ' 547 case is to have advocated U.S. Provisional Application case the 60/943rd, the advantage of No. 533, its full content is herein incorporated in the mode of list of references.
Embodiments of the invention are generally about semiconductor processes, and particularly, embodiments of the invention are the formation about light-emitting diode (LED) structure.
Background technology
When manufacturing light-emitting diode (light-emitting diode, LED), may form the epitaxial structure of " LED is stacking ", for example, " LED is stacking " comprises p Doped GaN layer and n Doped GaN layer.Fig. 1 is a schematic diagram, and an example of existing LED element 102 is described, it has n doped layer 106 and p doped layer 110, and this is two-layer is separated by multiple quantum well (multi-quantum well, MQW) layer 108.In general, LED element 102 is to be deposited in carrier/growth supporting substrate (not shown) of suitable material, for example c-plane (c-plane) carborundum or c-plane sapphire, and be to engage with heat-conductivity conducting substrate 101 by knitting layer 204.Brightness can be strengthened in reflector 202.Via n electrode 117 and heat-conductivity conducting substrate 101, can between n doped layer 106 and p doped layer 110, apply voltage severally.
In some example, wish to control and pass through the magnitude of current that n electrode 117 arrives substrate 101, for example, to be used for power-limiting loss and/or prevent the damage of LED element 102.Therefore under p doped layer 110, the middle formation electrical insulation layer 206 in reflector 202, to increase contact resistance and the Limited Current under n electrode 117.Insulating barrier 206 can be similar to the current-limiting layer (current-blocking layer) described in " Photonics Spectra, December1991, pp.64-66byH.Kaplan ").It at title, is the United States Patent (USP) the 5th of " WaferBonding of Light Emitting Diode Layers ", 376, in No. 580, the people such as Kish have disclosed etched pattern semiconductor crystal wafer to form a recess, and make described wafer and independent LED structural engagement, make recess in described integrated structure, form a chamber (cavity).When applying voltage and make described integrated structure be forward bias, electric current will flow in LED structure, but because air (air) is the body that is electrically insulated, so will not have electric current can flow through chamber or flow to the directly region under chamber.Therefore, air chamber (air cavity) is used as the current confinement structure (current-blocking structure) of another kind of pattern.
It's a pity, the method for these electric current guiding has some shortcomings.For example, electrical insulation layer 206, air chamber and other existing current confinement structure may limit thermal conductivity, therefore may increase the temperature in operation, and detract element reliability and/or life-span.
In addition, existing LED element, for example the LED element 102 in Fig. 1, is easily destroyed by static discharge (ESD) and other high voltage transient state.ESD spike may occur, for example, during the processing of element, though be when the manufacture of LED element itself, while transporting or be placed in printed circuit board (PCB) or other suitable electrical connection with on fixed surface time.Overvoltage transient state may betide in the electricity consumption operating process of LED element.Such high voltage transient state may be destroyed the semiconductor layer of element, even may cause element fault, therefore reduces life-span and the reliability of LED element.
Therefore, need a kind of guide current that is used for by the modification method of LED element.
Summary of the invention
Main purpose of the present invention is to provide a kind of the vertical led of current guiding structure that have, to solve existing problem in above-mentioned prior art.
Embodiments of the invention propose to be used for guiding semiconductor element (light-emitting diode for example, method and the element of the electric current in LED).
In order to achieve the above object, the invention provides a kind of the vertical led of current guiding structure that have, comprising:
One substrate;
One LED is stacking, is for emission of light, and is arranged on described substrate, and wherein, described LED is stacking to be comprised:
One p-type semiconductor layer; And
One N-shaped semiconductor layer, is arranged on described p-type version conductor layer, and wherein, stacking one first current path that is to provide of described LED is to described light-emitting diode; And
One second path is to be different from described the second path.
Wherein, described the second path is to be coupled between described substrate and described N-shaped semiconductor layer.
Wherein, described the second path is to form a non-ohmic contact with described N-shaped semiconductor layer.
Wherein, described the second path comprises a conductive material.
Wherein, described conductive material comprises multi-metal layer.
Wherein, described conductive material comprises following at least one: Ni, Ag, Au, Al, Mo, Pt, W, W-Si, Ta, Ti, Hf, Ge, Mg, Zn, W/Au, Ta/Au, Pt/Au, Ti/Au, Ti/Al, Ti/Pt/Au, Ti/Ni/Au, Ta/Pt/Au, W-Si/Au, Cr/Au, Cr/Al, Ni/Au, Ni/Al, Nui/Cu, Cr/Ni/Au, Cr/W/Au, Cr/W-Si/Au, Cr/Pt/Au, AuGe, AuZn, ITO or IZO.
Wherein, further comprise the material that is electrically insulated, be described the second current path and described LED stacking between.
Wherein, described in the material that is electrically insulated comprise a bag sheath, be the stacking side surface of contiguous described LED.
Wherein, the material that is electrically insulated described in comprises following at least one: SiO
2, Si
3n
4, TiO
2, Al
2o
3, HfO
2, Ta
2o
5, rotary coating glass, MgO, macromolecule, polyimides, photo resistance, parylene, SU-8 or thermoplastic plastic.
Wherein, described the second current path is that framework protects described LED stacking, to avoid a high voltage transient state.
Wherein, described high voltage transient state comprises a static discharge.
Wherein, described the second current path comprises a protection component, is contiguous described N-shaped semiconductor layer setting.
Wherein, described protection component is to comprise following at least one: ZnO, ZnS, TiO
2, NiO, SrTiO
3, SiO
2, Cr
2o
3, and polymethyl methacrylate.
Wherein, the thickness of described protection component is between the scope of 10 μ m at 1nm.
Wherein, described the second current path is to comprise a laminating layer, is contiguous described protection component setting.
Wherein, described the second current path is to comprise a wire, is to be coupled between described substrate and described laminating layer.
Wherein, described laminating layer comprises multi-metal layer.
Wherein, described laminating layer is to comprise following at least one: Ti/Au, Ti/Al, Ti/Pt/Au, Cr/Au, Cr/Al, Al, Au, Ni/Au, Ni/Al or Cr/Ni/Au.
Wherein, the thickness of described laminating layer is between 0.5 to 10 μ m.
Wherein, further comprise a p electrode, be be plugged in described substrate and described LED stacking between, wherein, described p electrode comprises a conductive structure, be for electric current guiding is stacking through described LED, make the light of directly launching under described n electrode be less than the light of launching from other stacking regions of described LED.
Wherein, described electric current guiding structural comprises first and second contact, and described the first contact is to have higher resistance than described the second contact.
In order to achieve the above object, the invention provides a kind of the vertical led of current guiding structure that have, comprising:
One n electrode;
One LED is stacking, is for emission of light, and is arranged under described n electrode, and wherein, described LED is couple to a N-shaped semiconductor layer of described n electrode and is arranged on the p-type semiconductor layer under described N-shaped semiconductor layer stacking comprising; And
One p electrode, be arranged under described p-type semiconductor layer, wherein, described p electrode comprises a conductive structure, that making the light of directly launching under described n electrode is to be less than the light of launching from stacking other regions of described LED for electric current guiding is stacking through described LED.
Wherein, described electric current guiding structural comprises first and second contact, and described the first contact is to have higher resistance than described the second contact.
Wherein, described the first contact comprises a barrier metal layer.
Wherein, described the first contact comprises multi-metal layer.
Wherein, described the first contact comprises following at least one: PT, Ta, W, W-Si, Ni, Cr/Ni/Au, W/Au, Ta/Au, Ni/Au, Ti/Ni/Au, W-Si/Au, Cr/W/Au, Cr/W-Si/Au, Pt/Au, Cr/Pt/Au or Ta/Pt/Au.
Wherein, described the second contact comprises a reflector.
Wherein, described the second contact comprises following at least one: Ag, Au, Al, Ag-Al, Mg/Ag, Mg/Ag/Ni, Mg/Ag/Ni/Au, AgNi, Ni/Ag/Ni/Au, Ag/Ni/Au, Ag/Ti/Ni/Au, Ti/Al, Ni/Al, AuBe, AuGe, AuPd, AuPt, AuZn, ITO, IZO or use comprises the wherein alloy of one at least of Ag, Au, Al, Ni, Cr, Mg, Pt, Pd, Rh or Cu.
Wherein, described the second contact comprises omnidirectional's reflecting system.
Wherein, the area of described the second contact is the area that is greater than described the first contact.
Wherein, described the first contact is arranged in a white space of described the second contact.
Wherein, the resistance value of described the first contact is at least the twice of the resistance value of the second contact.
Wherein, further comprise a substrate, be arranged under described p electrode, and be coupled to described p electrode.
Wherein, described LED is one vertical led.
In order to achieve the above object, the present invention also provides a kind of the vertical led of current guiding structure that have, and is to comprise:
One substrate;
One p electrode, is arranged under described substrate;
One LED is stacking, is for emission of light, and is arranged on described p electrode, and wherein, described LED is stacking is to comprise:
One p-type semiconductor layer is to be couple to described p electrode; And
One N-shaped semiconductor layer, is arranged on described p-type semiconductor layer, and wherein, stacking one first current path that is to provide of described LED is to described light-emitting diode;
One n electrode, be arranged on described N-shaped semiconductor layer, wherein, described p electrode is to comprise a conductive structure, that making the light of directly launching under described n electrode is to be less than the light of launching from stacking other regions of described LED for electric current guiding is stacking through described LED; And
One second current path, it is to be different from described the first current path, wherein; described the second current path is to be coupled between described substrate and described N-shaped semiconductor layer; and wherein, described the second current path is to comprise a protection component, it is contiguous described N-shaped semiconductor layer setting.
Wherein, described electric current guiding structural is to comprise first and second contact, and described the first contact is to have higher resistance than described the second contact.
Wherein, described protection component comprises following at least one: ZnO, ZnS, TiO
2, NiO, SrTiO
3, SiO
2, Cr
2o
3, and polymethyl methacrylate.
Accompanying drawing explanation
In order at length to recognize the means of the reference characteristic that the present invention is above-mentioned, to such an extent as to the present invention one more particularly describes, and above-mentioned summary tout court, is reference example to obtain, its some embodiment be illustrate additional graphic in.Yet, note, additional graphic be only to illustrate the typical embodiment of the present invention, and therefore it can't limit its scope, the present invention is other equivalent embodiment of tolerable.
Fig. 1 means the schematic diagram of an example of the existing LED element with current guiding structure.
Fig. 2 means that the present invention has the schematic diagram of an example of the LED element of current guiding structure.
Fig. 3 means the equivalent circuit diagram of the LED element in Fig. 2.
Fig. 4 means that the present invention has the schematic diagram of an example of the LED element of one second current path.
Fig. 5 means the equivalent circuit diagram of the LED element of Fig. 4.
Fig. 6 means that the present invention has the schematic diagram of an example of the LED element of an electric current guiding structural and one second current path.
Fig. 7 means the equivalent circuit diagram of the LED element of Fig. 6.
Fig. 8 means that the present invention has one second current path and has the schematic diagram of an example of the LED element of a protection component.
Fig. 9 means that the present invention has the schematic diagram of an example of the LED element of an electric current guiding structural, one second current path and a protection component.
Figure 10 means that the present invention has one second current path and is the schematic diagram of an example of the LED element of wafer kenel.
Figure 11 means that the present invention has one second current path and is the schematic diagram of an example of the LED element of encapsulation kenel.
Figure 12 means relatively have the second current path and the current-voltage figure of the LED element of tool the second current path not.
Figure 13 means to have the second current path and not the electrostatic defending degree of the LED element of tool the second current path and corresponding survival rate.
Description of reference numerals:
101-heat-conductivity conducting substrate; 102-LED element; 106-n doped layer (N-shaped semiconductor layer); 108-multiple quantum well layer (active layers); 110-p doped layer (p-type semiconductor layer); 117-n electrode; 119-end face; 202-reflector; 204-knitting layer; 206-insulating barrier; 208-barrier metal layer; 211-high contact resistance district; 213-low contact resistance district; 300-equivalent electric circuit; 302-R
l; 304-R
h; 306-diode; 400-LED element; 402-the second current path; 404-electrical insulation layer; 411-the second electric conducting material; 412-non-ohmic contact; 500-equivalent electric circuit; 502-equivalent resistor; The desirable LED of 504-; 506-TVS diode; 700-equivalent electric circuit; 810-protection component; The 1002-metal level of fitting; 1102-shares encapsulation positive wire; 1104-sealing wire; 1106-negative electrode packaging conductive wire; 1108-sealing wire; 1200-curve chart; 1202-does not have the exemplary electric current of LED element of the second current path to voltage curve; 1204-has the exemplary electric current of LED element of the second current path to voltage curve; The exemplary chart of 1300-; 1302-LED element; 1304-LED element; 1306-LED element; 1308-LED element; 1310-LED element; 1312-LED element.
Embodiment
Embodiments of the invention propose to be used for controlling for example, method by the current flowing of semiconductor element (LED) conventionally.Described control may be passed through current guiding structure, the second current path or this both combination.
Hereinafter, for example " ... on ", " ... under ", " being adjacent to ... ", " ... beneath " etc. relative word, be only for convenience of description, conventionally do not need specific direction.
The example of current guiding structure
Fig. 2 means that the present invention has the schematic diagram of an example of the LED element of current guiding structure.This LED element comprises that one is known as the stacking component structure of LED, and stacking any semi-conducting material applicable to emission of light, for example AlInGaN of comprising of LED.LED is stacking is to comprise heterojunction (heterojunction), and heterojunction is by p-type semiconductor layer 110, form for active layers 108 and the N-shaped semiconductor layer 106 of emission of light.LED is stacking has an end face 119, and end face 119 is to have passed through roughening, as shown in Figure 2.LED element is to comprise the n electrode 117 being formed on end face 119, and be positioned at the p electrode (reflector 202 and barrier metal layer 208 are that the effect that can be used as p electrode is used) on p-type semiconductor layer 110, wherein n electrode 117 is that electric property coupling is to N-shaped semiconductor layer 106.
Reflector 202 is to be configured to be contiguous to p-type layer 110, and is inserted with barrier metal layer 208, to form respectively low contact resistance district 213He high contact resistance district 211.For some embodiment, the volume in low contact resistance district 213 is to be greater than high contact resistance district 211.Can conduct electricity but high high contact resistance district 211, resistance ratio low contact resistance district 213, can utilize metal material as described below to form.Utilization has the region of different contact resistances, and is controlled carefully, can be used to guide current, luminous with the active layers from desired regions, for example, and luminous mainly coming from not in the active layers that is used for strengthening the region under the n electrode 117 of light emission.
According to this mode, compare with the existing LED element (as thering is the LED element of electric insulation layer 206 in Fig. 1) with common current limit or other current guiding structure, in Fig. 2, there is the LED element of the current guiding structure of conduction completely and have larger thermal conductivity.Therefore, compare with existing LED element, the LED element with conductive current guide structure of the LED element of Fig. 2 and other embodiments of the invention, is to enjoy the operating temperature of reduction and element reliability and/or the life-span of increase.
Fig. 3 means the schematic diagram of the equivalent electric circuit 300 of the LED element in Fig. 2.As shown in the figure, equivalent electric circuit 300 is to comprise resistor R in parallel
l302 and R
h304, resistor R
l302 and R
hthe 304th, the equivalent resistance in the high contact resistance district 211Ji low contact resistance district 213 of simulation drawing 2.Although only show a resistor, be used as low contact resistance district, resistor R
l302 may represent the lump equivalent in more than one low contact resistance in parallel district, and example is two regions 213 as shown in Figure 2.Similarly, resistor R
hthe 304th, can represent the lump equivalent in more than one high contact resistance in parallel district 211.For some embodiment, equivalent high contact resistance is can be at least the twice of equivalent low contact resistance.As shown in the figure, resistor R in parallel
l302 and R
hthe 304th, to connect with diode 306, diode 306 representatives are without one of series resistance desirable LED.
A substrate 201 more than one deck is to be configured to be contiguous to p electrode (208, the reflector 202 in Fig. 2 and barrier metal layer form).Substrate 201 can be conductivity or semiconduction.In certain embodiments, substrate 201 can be thermal conductivity.One electrically-conductive backing plate can be a simple layer or multiple layer, and can comprise metal or metal alloy, for example Cu, Ni, Ag, Au, Al, Cu-Co, Ni-Co, Cu-W, Cu-Mo, Ge, Ni/Cu and Ni/Cu-Mo.So a substrate 201 is to use any suitable Film forming method to deposit, for example electrochemical deposition method (ECD), without electrochemical deposition method (Eless CD), chemical vapour deposition technique (CVD), Metalorganic chemical vapor deposition method (MOCVD) and physical vaporous deposition (PVD).For some embodiment, be can use without electrochemical deposition method to deposit a seed metal layer (seed metal layer), then use additional metal levels more than one deck of galvanoplastic deposition substrate on seed metal layer.One semi conductive substrate (semi-conductive substrate) is can comprise according to simple layer or multiple layer, and can be consisted of for example silicon (Si) or carborundum (SiC).The thickness of substrate 201 is can be between 10 to 400 μ m scopes.
Reflector 202 is to comprise simple layer or multiple layer, and it is to comprise any suitable material, and this material is to compare and have quite low resistance for reflection ray and with the material that is used for producing high contact resistance district 211.For example, reflector 202 can comprise the alloy that for example Ag, Au, Al, Ag-Al, Mg/Ag, Mg/Ag/Ni, Mg/Ag/Ni/Au, AgNi, Ni/Ag/Ni/Au, Ag/Ni/Au, Ag/Ti/Ni/Au, Ti/Al, Ni/Al, AuBe, AuGe, AuPd, AuPt, AuZn or use comprise Ag, Au, Al, Ni, Cr, Mg, Pt, Pd, Rh or Cu.
For some embodiment, low contact resistance district 213 can comprise omnidirectional's reflection (omni-directional reflective, ODR) system.One ODR can comprise a transparent conductive layer and a reflector, and transparent conductive layer is comprised of materials such as indium tin oxide (ITO) or indium-zinc oxide (IZO).ODR can be inserted with a current confinement structure or other to be used for the suitable construction of guide current.One exemplary ODR system is to be disclosed in the U.S. patent application case the 11/682nd of owning together, No. 780, its applying date is that on March 6th, 2007 and title are " Vertical Light-Emitting Diode Structure with Omni-Directional Reflector ", and it is herein incorporated in full as list of references.
N electrode 117 (also referred to as contact pad or n weld pad) can be single metal level or multi-metal layer, single metal level or multi-metal layer were comprised of for the material of conduction any being applicable to, for example Cr/Au, Cr/Al, Cr/Pt/Au, Cr/Ni/Au, Cr/Al/Pt/Au, Cr/Al/Ni/Au, Ti/Al, Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Al, Al/Pt/Au, Al/Pt/Al, Al/Ni/Au, Al/Ni/Al, Al/W/Al, Al/W/Au, Al/TaN/Al, Al/TaN/Au, Al/Mo/Au.The thickness of n electrode 117 is to can be about 0.1 to 50 μ m.N electrode 117 is to utilize the methods such as deposition, sputter, evaporation, plating, electroless-plating, coating and/or printing to be formed on the stacking end face of LED 119.
Barrier metal layer 208 can be simple layer or multiple layer, and simple layer or multiple layer are to comprise any being applicable to for forming the material in high contact resistance district 211.For example, barrier metal layer 208 is the materials that can comprise such as Ag, Au, Al, Mo, Ti, Hf, Ge, Mg, Zn, Ni, Pt, Ta, W, W-Si, W/Au, Ni/Cu, Ta/Au, Ni/Au, Pt/Au, Ti/Au, Cr/Au, Ti/Al, Ni/Al, Cr/Al, AuGe, AuZn, Ti/Ni/Au, W-Si/Au, Cr/W/Au, Cr/Ni/Au, Cr/W-Si/Au, Cr/Pt/Au, Ti/Pt/Au, Ta/Pt/Au, ITO and IZO etc.
As shown in Figure 2, protective layer 220 is to be formed at the side surface that is contiguous to LED element.Protective layer 220 is to can be used as passivation protection layer (passivation layer), in order to protect LED element (particularly heterojunction) that its electricity that is not subject to context and chemical condition are affected.
For example, the one layer or more by any suitable processing (method as long-pending in electrochemistry Shen or without electrochemical deposition method) deposition as reflector 202, is to form high/low contact resistance district.By any suitable processing (as wet etching or dry ecthing), the region that is designated as high contact resistance district 211 in reflector 202 is removed again.After removing appointed area, in the white space in reflector 202, form barrier metal layer 208.For some embodiment as shown in Figure 2, the barrier metal floor 208 that forms high contact resistance district 211 is the white spaces (voided spaces) that can insert in reflector 202, and covers reflector.
For some embodiment, when the LED with having smooth top surface is stacking, compare, in order to increase light, extract, be the stacking end face 119 of LED can be patterned or roughening.The patterning of end face 119 or roughening are to utilize any suitable technology (for example wet or dry ecthing).
For some embodiment, current guiding structure described herein can combine with the second current path shown in Fig. 6 and Fig. 9.Relevant with Fig. 4 hereinafter, will to the second current path, be narrated in more detail.
The example of the second current path
Fig. 4 means that the present invention has the schematic diagram of embodiment of the exemplary LED element 400 of the second current path 402.As shown in the figure, LED element 400 is can comprise a substrate 201, be disposed at p electrode 207 on substrate 201, be disposed at the LED stacking 104 on p electrode 207 and be disposed at the n electrode 117 on LED stacking 104.Substrate 201 can be thermal conductivity as above and conductivity or semiconduction.LED stacking 104 can comprise a heterojunction, heterojunction be can comprise p-type semiconductor layer 110, for active layers 108 and the N-shaped semiconductor layer 106 of emission of light.One second electric conducting material 411 is to be connected to substrate 201 and N-shaped semiconductor layer 106, and forms non-ohmic contact 412 with N-shaped semiconductor layer 106, so that one second current path 402 to be provided between substrate 201 and N-shaped semiconductor layer 106.The formation of the second electric conducting material 411 is can for example, by any suitable technique, means of electron beam deposition, sputtering method and/or print process.
As shown in the figure, electrical insulation layer 404 is the LED of the second electric conducting material 411 and at least one part stacking 104 can be separated.Insulating barrier 404 is to comprise any suitable material that is electrically insulated, for example SiO
2, Si
3n
4, TiO
2, Al
2o
3, HfO
2, Ta
2o
5, rotary coating glass (spin-on-glass, SOG), MgO, macromolecule, polyimides, photo resistance, parylene, SU-8 and thermoplastic plastic.For some embodiment, protective layer 220 can be regarded insulating barrier 404.
As mentioned above, substrate 201 can be a simple layer or multiple layer, and simple layer or multiple layer are to comprise metal or metal alloy, for example Cu, Ni, Ag, Au, Al, Cu-Co, Ni-Co, Cu-W, Cu-Mo, Ge, Ni/Cu and Ni/Cu-Mo.The thickness of substrate 201 is can about 10 to 400 μ m.
Fig. 5 means a schematic diagram of the equivalent electric circuit 500 of LED element in Fig. 4.As shown in the figure, equivalent electric circuit 500 comprises two parallel current paths.The first current path is to comprise equivalent resistor R
l502, equivalent resistor R
lthe 502nd, connect with desirable LED504, to form from a forward current path of substrate 201 to n electrodes 117.The second current path 402 means as two-way transient voltage inhibition (transient voltage suppression, TVS) diode 506.The operation of TVS diode 506 is to be similar to two relatively Zener diodes of series connection, and can be used to protective resistor 502 and desirable LED504 to avoid high voltage transient state.For example, compared to other common overvoltage protection element (rheostat or gas discharge tube); 506 pairs of superpotential reactions of TVS diode faster; make TVS diode 506 can be used for protection very fast and be harmful to frequently voltage transient, for example static discharge (ESD).The second electric conducting material 411 in Fig. 4 is the TVS diodes 506 that can form in the 5th figure.When induced voltage surpasses Zener breakdown voltage, the second electric conducting material 411 can be shunted the overcurrent of either direction.
Fig. 6 means the present invention, and another has the schematic diagram of embodiment of the exemplary LED element of the second current path 402.As shown in the figure, the LED element that has the second current path 402 is also to comprise the current guiding structure being comprised of each other high/low contact resistance district 211/213.For example, the description as relevant the 2nd figure in above, by plug barrier metal layer 208 in reflector 202, can form these different contact zones.
Fig. 7 means a schematic diagram of the equivalent electric circuit 700 of LED element in Fig. 6.As shown in the figure, the single equivalent resistor R of Fig. 5
l502 by R
h304 and R
l302 tandem compound replaces, R
h304 and R
lthe high/low contact resistance district 211/213 of adjacency in 302 representative graphs 6.All the other parts of circuit 700 are identical with the circuit 500 of Fig. 5.That is to say, the LED element of Fig. 6 is to have advantages of that electric current guiding and transient state suppress.
Fig. 8 means the present invention, and another has the schematic diagram of embodiment of the exemplary LED element of the second current path 402.In this embodiment, in the second current path 402, form protection component 810.As shown in the figure, protection component 810 is can be formed on N-shaped semiconductor layer 106, and can be used to increase transient voltage protection or current capacity, thus, and to increase reliability and/or the life-span of LED element.Protection component 810 is to comprise any suitable material, for example ZnO, ZnS, TiO
2, NiO, SrTiO
3, SiO
2, Cr
2o
3, and polymethyl methacrylate (PMMA).The thickness range of protection component 810 is can be from about 1nm to 10 μ m.
As shown in Figure 9, having the LED element (as shown in Figure 8) of one second current path 402 and a protection component 810, is also to comprise the current guiding structure being comprised of each other high/low contact resistance district 211/213.For example, the description as relevant Fig. 2 in above, by plug barrier metal layer 208 in reflector 202, can form these different contact zones.
Figure 10 means that the present invention has the second current path and is the schematic diagram of the embodiment of the exemplary LED element of wafer pattern.As shown in the figure, a laminating metal level 1002 is on the protection component 810 that can be deposited in the second current path.Laminating layer 1002 is to comprise any material that is applicable to being used as electric connection, for example Al, Au, Ti/Au, Ti/Al, Ti/Pt/Au, Cr/Au, Cr/Al, Ni/Au, Ni/Al or Cr/Ni/Au.The thickness range of laminating layer 1002 is can from 0.5 to 10 μ m.For some embodiment, n electrode 117 is to may extend into allow laminating (bonding) Cheng Zhiyi encapsulation, as hereinafter about the explanation of Figure 11.
Figure 11 means the schematic diagram of encapsulation pattern embodiment of the LED element of Figure 10 of the present invention.As shown in the figure, substrate 201 is to be engaged in one to share encapsulation positive wire 1102.By being connected to the sealing wire 1104 of laminating layer 1002, laminating layer 1002 is to be connected to positive wire 1102, therefore forms the second current path.By another sealing wire 1108, n electrode 117 is to be connected to a negative electrode packaging conductive wire 1106.
The curve chart 1200 of the exemplary electric current that Figure 12 means the LED element of describing respectively to have/do not have the second current path to voltage curve 1204,1202.If electric current is to as shown in voltage curve 1204, in the situation that there is no overcurrent, the second current path is to allow a LED element to bear higher voltage, thereby can prevent from damaging and/or extending component life.
Figure 13 means the survival rate of the LED element/do not have with the second current path and an exemplary chart 1300 of the corresponding relation between ESD voltage.The LED element 1304,1306,1308,1310,1312 without the second current path different ESD voltage, with different survival rate (survival rates) by test.Anti-, the LED element 1302 with the second current path has under the larger ESD voltage that is even being greater than 2000 volts, to equal or to pass through test close to 100% ratio.
Although described current guiding structure has advantage when being applied to vertical led (VLED) element herein, be familiar with technique field person and should understand, conventionally, such advantage is applicable to most semiconductor element.Therefore,, for the semiconductor element with any type of PN junction, use described structure will contribute to form low resistance contact and/or transient state mortifier herein.
Although be for embodiments of the invention above, under base region of the present invention, can design other and other embodiment not departing from, scope of the present invention is defined by following claim.
Claims (37)
1. one kind has the vertical led of current guiding structure, it is characterized in that, comprising:
One substrate;
One LED is stacking, is for emission of light, and is arranged on described substrate, and wherein, described LED is stacking to be comprised:
One p-type semiconductor layer; And
One N-shaped semiconductor layer, is arranged on described p-type version conductor layer, and wherein, stacking one first current path that is to provide of described LED is to described light-emitting diode; And
One second path is to be different from described the second path.
According to claim 1 there is the vertical led of current guiding structure, it is characterized in that, described the second path is to be coupled between described substrate and described N-shaped semiconductor layer.
According to claim 2 there is the vertical led of current guiding structure, it is characterized in that, described the second path is to form a non-ohmic contact with described N-shaped semiconductor layer.
According to claim 2 there is the vertical led of current guiding structure, it is characterized in that, described the second path comprises a conductive material.
According to claim 4 there is the vertical led of current guiding structure, it is characterized in that, described conductive material comprises multi-metal layer.
6. according to claim 4, there is the vertical led of current guiding structure, it is characterized in that, described conductive material comprises following at least one: Ni, Ag, Au, Al, Mo, Pt, W, W-Si, Ta, Ti, Hf, Ge, Mg, Zn, W/Au, Ta/Au, Pt/Au, Ti/Au, Ti/Al, Ti/Pt/Au, Ti/Ni/Au, Ta/Pt/Au, W-S i/Au, Cr/Au, Cr/Al, Ni/Au, Ni/Al, Nui/Cu, Cr/Ni/Au, Cr/W/Au, Cr/W-Si/Au, Cr/Pt/Au, AuGe, AuZn, ITO or IZO.
According to claim 2 there is the vertical led of current guiding structure, it is characterized in that, further comprise the material that is electrically insulated, be described the second current path and described LED stacking between.
According to claim 7 there is the vertical led of current guiding structure, it is characterized in that, described in the material that is electrically insulated comprise a bag sheath, be the stacking side surface of contiguous described LED.
According to claim 7 there is the vertical led of current guiding structure, it is characterized in that, described in the material that is electrically insulated comprise following at least one: SiO
2, Si
3n
4, TiO
2, Al
2o
3, HfO
2, Ta
2o
5, rotary coating glass, MgO, macromolecule, polyimides, photo resistance, parylene, SU-8 or thermoplastic plastic.
According to claim 1 there is the vertical led of current guiding structure, it is characterized in that, described the second current path is that framework protects described LED stacking, to avoid a high voltage transient state.
11. according to claim 10 there is the vertical led of current guiding structure, it is characterized in that, described high voltage transient state comprises a static discharge.
12. according to claim 2 there is the vertical led of current guiding structure, it is characterized in that, described the second current path comprises a protection component, is contiguous described N-shaped semiconductor layer setting.
13. according to claim 12 there is the vertical led of current guiding structure, it is characterized in that, described protection component is to comprise following at least one: ZnO, ZnS, TiO
2, NiO, SrTiO
3, SiO
2, Cr
2o
3, and polymethyl methacrylate.
14. according to claim 12 there is the vertical led of current guiding structure, it is characterized in that, the thickness of described protection component is between the scope of 10 μ m at 1nm.
15. according to claim 12 there is the vertical led of current guiding structure, it is characterized in that, described the second current path is to comprise a laminating layer, is contiguous described protection component setting.
16. according to claim 15 there is the vertical led of current guiding structure, it is characterized in that, described the second current path is to comprise a wire, is to be coupled between described substrate and described laminating layer.
17. according to claim 15 there is the vertical led of current guiding structure, it is characterized in that, described laminating layer comprises multi-metal layer.
18. have the vertical led of current guiding structure according to claim 15, it is characterized in that, described laminating layer is to comprise following at least one: Ti/Au, Ti/Al, Ti/Pt/Au, Cr/Au, Cr/Al, Al, Au, Ni/Au, Ni/Al or Cr/Ni/Au.
19. according to claim 15 there is the vertical led of current guiding structure, it is characterized in that, the thickness of described laminating layer is between 0.5 to 10 μ m.
20. have the vertical led of current guiding structure according to claim 1, it is characterized in that, further comprise a p electrode, be be plugged in described substrate and described LED stacking between, wherein, described p electrode comprises a conductive structure, is for electric current guiding is stacking through described LED, makes the light of directly launching under described n electrode be less than the light of launching from other stacking regions of described LED.
21. according to claim 20 there is the vertical led of current guiding structure, it is characterized in that, described electric current guiding structural comprises first and second contact, described the first contact is to have higher resistance than described the second contact.
22. 1 kinds have the vertical led of current guiding structure, it is characterized in that, comprising:
One n electrode;
One LED is stacking, is for emission of light, and is arranged under described n electrode, and wherein, described LED is couple to a N-shaped semiconductor layer of described n electrode and is arranged on the p-type semiconductor layer under described N-shaped semiconductor layer stacking comprising; And
One p electrode, be arranged under described p-type semiconductor layer, wherein, described p electrode comprises a conductive structure, that making the light of directly launching under described n electrode is to be less than the light of launching from stacking other regions of described LED for electric current guiding is stacking through described LED.
23. according to claim 22 there is the vertical led of current guiding structure, it is characterized in that, described electric current guiding structural comprises first and second contact, described the first contact is to have higher resistance than described the second contact.
24. according to claim 23 there is the vertical led of current guiding structure, it is characterized in that, described the first contact comprises a barrier metal layer.
25. according to claim 23 there is the vertical led of current guiding structure, it is characterized in that, described the first contact comprises multi-metal layer.
26. have the vertical led of current guiding structure according to claim 23, it is characterized in that, described the first contact comprises following at least one: PT, Ta, W, W-Si, Ni, Cr/Ni/Au, W/Au, Ta/Au, Ni/Au, Ti/Ni/Au, W-Si/Au, Cr/W/Au, Cr/W-Si/Au, Pt/Au, Cr/Pt/Au or Ta/Pt/Au.
27. according to claim 23 there is the vertical led of current guiding structure, it is characterized in that, described the second contact comprises a reflector.
28. have the vertical led of current guiding structure according to claim 23, it is characterized in that, described the second contact comprises following at least one: Ag, Au, Al, Ag-Al, Mg/Ag, Mg/Ag/Ni, Mg/Ag/Ni/Au, AgNi, Ni/Ag/Ni/Au, Ag/Ni/Au, Ag/Ti/Ni/Au, Ti/Al, Ni/Al, AuBe, AuGe, AuPd, AuPt, AuZn, ITO, IZO or use comprises the wherein alloy of one at least of Ag, Au, Al, Ni, Cr, Mg, Pt, Pd, Rh or Cu.
29. according to claim 23 there is the vertical led of current guiding structure, it is characterized in that, described the second contact comprises omnidirectional's reflecting system.
30. according to claim 23 there is the vertical led of current guiding structure, it is characterized in that, the area of described the second contact is the area that is greater than described the first contact.
31. according to claim 23 there is the vertical led of current guiding structure, it is characterized in that, described the first contact is arranged in a white space of described the second contact.
32. according to claim 23 there is the vertical led of current guiding structure, it is characterized in that, the resistance value of described the first contact is at least the twice of the resistance value of the second contact.
33. according to claim 22 there is the vertical led of current guiding structure, it is characterized in that, further comprise a substrate, be arranged under described p electrode, and be coupled to described p electrode.
34. according to claim 22 there is the vertical led of current guiding structure, it is characterized in that, described LED is one vertical led.
35. 1 kinds have the vertical led of current guiding structure, it is characterized in that, be to comprise:
One substrate;
One p electrode, is arranged under described substrate;
One LED is stacking, is for emission of light, and is arranged on described p electrode, and wherein, described LED is stacking is to comprise:
One p-type semiconductor layer is to be couple to described p electrode; And
One N-shaped semiconductor layer, is arranged on described p-type semiconductor layer, and wherein, stacking one first current path that is to provide of described LED is to described light-emitting diode;
One n electrode, be arranged on described N-shaped semiconductor layer, wherein, described p electrode is to comprise a conductive structure, that making the light of directly launching under described n electrode is to be less than the light of launching from stacking other regions of described LED for electric current guiding is stacking through described LED; And
One second current path, it is to be different from described the first current path, wherein; described the second current path is to be coupled between described substrate and described N-shaped semiconductor layer; and wherein, described the second current path is to comprise a protection component, it is contiguous described N-shaped semiconductor layer setting.
36. according to claim 35 there is the vertical led of current guiding structure, it is characterized in that, described electric current guiding structural is to comprise first and second contact, described the first contact is to have higher resistance than described the second contact.
37. according to claim 35 there is the vertical led of current guiding structure, it is characterized in that, described protection component comprises following at least one: ZnO, ZnS, TiO
2, NiO, SrTiO
3, SiO
2, Cr
2o
3, and polymethyl methacrylate.
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| CN201310054974.3A CN103996774A (en) | 2013-02-19 | 2013-02-19 | Vertical type light emitting diode with current guiding structure |
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| CN201310054974.3A CN103996774A (en) | 2013-02-19 | 2013-02-19 | Vertical type light emitting diode with current guiding structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109830585A (en) * | 2019-01-22 | 2019-05-31 | 江西兆驰半导体有限公司 | A kind of light-emitting diode chip for backlight unit with high reflectance electrode |
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| US6900068B2 (en) * | 2002-12-31 | 2005-05-31 | United Epitaxy Co., Ltd. | Light emitting diode and method of making the same |
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