CN103996737B - Visible-light avalanche photodetector with isolated absorption layer and multiplication layer and filtering function - Google Patents
Visible-light avalanche photodetector with isolated absorption layer and multiplication layer and filtering function Download PDFInfo
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 22
- 238000001914 filtration Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000005693 optoelectronics Effects 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 abstract description 15
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 230000001960 triggered effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
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- 238000004891 communication Methods 0.000 description 5
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Abstract
The invention relates to the technical field of a visible-light detector and more specifically, relates to a visible-light avalanche photodetector with an isolated absorption layer and multiplication layer and a filtering function. The visible-light avalanche photodetector with the isolated absorption layer and multiplication layer and the filtering function includes a substrate, and a buffer layer, an unintentional doped GaN layer, an n-type doped GaN layer, an n-type doped In＜z＞Ga＜1-z＞N layer, an n-type doped In＜y＞Ga＜l-y＞N contact layer, an unintentional doped high-resistance In＜y＞Ga＜l-y＞N absorption layer, a low-doping-density n-type In＜k＞Ga＜l-k＞N component graded layer, an unintentional doped high-resistance In＜x＞Ga＜1-x＞N multiplication layer and a p-type doped In＜x＞Ga＜1-x＞N layer, which grow on the substrate sequentially. The n-type doped In＜z＞Ga＜1-z＞N layer is used to play a window layer role and only allows light signals, the wavelength of which is larger than the cut-off wavelength of the In＜z＞Ga＜1-z＞N material, to pass and then the light signals are absorbed when entering the absorption layer and thus a filtering role is played. The isolation of the light absorption layer and the multiplication layer is beneficial to the avalanche gain triggered by a current carrier (cavity) so that integration of a high-performance visible-light photodetector which is low in noise and high in gain and a single chip of a filter is realized.
Description
Technical field
The present invention relates to the technical field of visible-light detector, separate and have more particularly, to a kind of absorption, dynode layer
There is the visible ray avalanche photodetector of filter function.
Background technology
In recent years, mobile device grows with each passing day to the demand of wireless data, and the network resource of frequency range tends to exhausted, network interferences
And security problems are also increasingly serious.Development with technology it is seen that optic communication (Visible Light Communication,
VLC) technology is gradually risen.This technology is to utilize white light emitting diode（LED）Low in energy consumption, long service life and modularity are excellent
The characteristic such as good, response sensitivity is high, while using it as illumination, being transmitted in signal modulation to visible light beam,
Realize illumination and the dual-use function communicating.Compared to short-distance wireless communications such as bluetooth, Wi-Fi, VLC technology has（1）Data
Transfer rate is high；（2）Level security is good；（3）No harmful radio-frequency radiation；（4）Without series of advantages such as wireless frequency spectrum licenses.
But, in the practical application of VLC technology, being also faced with some problems needs to solve：There is strong background in VLC system
Noise；Meanwhile, with the increasing of transmission range, the angle deviating of additional transmitting terminal and receiving terminal, detector receives
Signal is very faint；Furthermore, in communication environment, LED/light source number is more, exist between information source and detector some different
Light path, this will cause intersymbol interference.And the Si base adopting in VLC system now, AlGaAs, GaP base detector, not only
There is the problem that peak value of response and light source main light emission wavelength are inconsistent and detectivity that lead to is low, but also exist because
The shortcoming that the cost needing additional optical filter and leading to increases, volume increases, wave filter weakens incident optical signal.For above-mentioned
Problem, for guarantee communication quality it would be highly desirable to researching and developing the high and low noise of sensitivity and having the novel photoelectric-detection device of filtering characteristic.?
In current VLC technology, as light source, its main light emitting species is to pass through to white light LEDs（1）InGaN blue light emitting LED excites Huang
Color fluorescent material is realized；（1）InGaN blue and green light LED is combined with AlGaInP red-light LED, by RGB（RGB）Three primary colours synthesize
White light.Therefore, photodetector is prepared as photosensitive material using InGaN, there is light source emission spectrum and detector absorption spectrum
Consistent inherent advantage.However, the current InGaN visible-light detector developed is substantially based on LED quantum well structure, gold
Genus-SEMICONDUCTOR-METAL (MSM) structure, the photovoltaic detector of MIM element (MIS) structure, in filtering characteristic
With the application request that VLC system is not all reached on detectivity.
Content of the invention
The present invention is at least one defect overcoming described in above-mentioned prior art, provide one kind be integrated with incident light filtering with
Photocurrent gain function, absorbed layer and dynode layer isolating construction visible ray avalanche photodetector.Optical signal is from the back side（Lining
Bottom side）Incidence, N-shaped doping InzGa1-zN layer serves as the effect of Window layer, only allows wavelength to be more than InzGa1-zN material ends
The incident light of wavelength passes through and enters into InyGa1-yN absorbed layer, InzGa1-zN Window layer and InyGa1-yThe cut-off wave of N absorbed layer
Length together decides on the wave-length coverage of spectral response, thus explorer response spectrum can be made consistent with light source led luminous spectrum, plays spy
Survey the device effect integrated with wave filter.Above-mentioned signal is in InyGa1-yAbsorbed in N Intrinsic Gettering layer, inspired electron hole pair,
In the presence of applied reverse bias voltage, electronics is collected into n-type GaN layer side, hole be then transported to have high electric field, with
In based on hole collision ionizationxGa1-xN（x<0.5）In dynode layer, thus triggering avalanche punctures, complete single carrier（Hole）
Triggering, thus improve device in InyGa1-yThe optical responsivity of the corresponding wave band of N（Detectivity）, finally realize wavelength select,
Low noise, high-gain, the visible ray avalanche photodetector of high detection sensitivity.
For solving above-mentioned technical problem, the technical solution used in the present invention is：A kind of absorption, dynode layer separate and have filter
The visible ray avalanche photodetector of wave energy, wherein, including substrate, using metal organic chemical vapor deposition extension outgrowth
Method（Or molecular beam epitaxial growth method）It is grown in the cushion on substrate, unintentional doped gan layer, N-shaped doped gan layer, n successively
Type doping InzGa1-zN layer, N-shaped doping InyGa1-yN contact layer, unintentional doping high resistant InyGa1-yN absorbed layer is low-doped dense
The N-shaped InGaN component graded layer of degree, unintentional doping high resistant InxGa1-xN dynode layer, p-type doping InxGa1-xN layer.
Cushion is used for reducing defect during Material growth, stress and dislocation, reduces lattice mismatch coefficient and thermal coefficient of expansion,
Ensure that the superperformance of epitaxial layer；The thickness of unintentional doped gan layer is 0.5-5 μm；N-shaped doped gan layer thickness is 0.5-2
μm, electron concentration is 2 × 1017-3×1018cm-3；N-shaped doping InzGa1-z0.1-0.8 μm of N thickness degree, electron concentration be 2 ×
1017-3×1018cm-3；N-shaped doping InyGa1-y0.05-0.5 μm of N contact layer thickness, electron concentration is 2 × 1017-5×1018cm-3；Unintentional doping high resistant InyGa1-yThe preferred thickness of N absorbed layer is 0.1-0.8 μm, its role is to absorb optical signal and produce
Raw electron hole pair, under reverse-biased electric field action, electronics drifts about to n-layer and is collected by N-shaped Ohm contact electrode, hole then to
The N-shaped InGaN component graded layer of low doping concentration moves；The thickness of the N-shaped InGaN component graded layer of low doping concentration is
0.005-0.1 μm, electron concentration is 1 × 1017-2×1018cm-3, it is substantially thinning to compare other layers, its role is to absorbed layer
Separate with dynode layer, this layer of fast transport is passed through to dynode layer in hole, meanwhile slows down InxGa1-xN and InyGa1-yThe energy of N layer
Band mutation content, suppression carrier is in the accumulation of heterojunction boundary；Unintentional doping high resistant InxGa1-xThe thickness of N dynode layer is
0.05-1 μm, wherein In component x=0-0.5.This dynode layer provides high reverse-biased electric field, makes the hole in entrance multiplication region obtain foot
Enough kinetic energy, collide ionization, realizes avalanche gain；It is finally p-type doping InxGa1-xThe thickness of N layer is 0.01-0.3 μm,
Hole concentration is 2 × 1017-5×1018cm-3.
In the present invention, substrate should be from the material to visible transparent, such as sapphire, SiC, GaN, AlN, LiGaCO2
Or LiAlCO2Deng the material such as unavailable Si, GaAs.
Compared with prior art, beneficial effect is：Present invention employs InzGa1-zN layer, as filter window layer, only allows
Wavelength is more than InzGa1-zThe incident optical signal of N cutoff wavelength passes through, and enters into InyGa1-yPhoto-generated carrier is excited in N absorbed layer,
And the band-pass response scope of incident light has been together decided on by the cutoff wavelength of Window layer and absorbed layer；On the other hand, in the structure
Introduce the N-shaped InGaN component graded layer of low doping concentration and unintentional doping high resistant InxGa1-xN dynode layer constitutes absorption multiplication
Isolating construction, produces low noise, the avalanche optoelectronic effect of high-gain, thus realizing having filtering and low noise avalanche gain function concurrently
High sensitivity visible-light detector.
Brief description
Fig. 1 is present invention absorption, dynode layer separation and the structure of the visible ray avalanche photodetector with filter function
Schematic diagram.
Specific embodiment
Being for illustration only property of accompanying drawing illustrates it is impossible to be interpreted as the restriction to this patent；In order to more preferably the present embodiment is described, attached
Scheme some parts to have omission, zoom in or out, do not represent the size of actual product；To those skilled in the art,
In accompanying drawing, some known features and its explanation may be omitted and be will be understood by.Being for illustration only property of position relationship described in accompanying drawing
Illustrate it is impossible to be interpreted as the restriction to this patent.
As shown in figure 1, the method is applied to the visible ray snowslide light making absorption, dynode layer separation and having filter function
Electric explorer, optical signal is from back（Substrate）Incident from bottom to top, wherein N-shaped doping InzGa1-zN layer 4 has filter action, choosing
Select wave-length coverage encirclement but be not limited to：Blue light 430 ~ 470nm；Green glow 530 ~ 570nm；Ruddiness 650 ~ 690nm.
In the present embodiment, a kind of absorption, dynode layer separate and have the visible ray avalanche photodetector of filter function, its
In, including substrate 1, using the external regular way of metal organic chemical vapor deposition extension（Or molecular beam epitaxial growth method）, exist successively
The low temperature GaN buffer of 25nm of growth and 2 μm of high temperature unintentional doping GaN cushion on substrate 1,2 μ m-thick unintentional
Doped gan layer 2, the N-shaped doping In of N-shaped doped gan layer 3,0.5 μ m-thick of 0.5 μ m-thickzGa1-zN layer 4（Blue light, z=0.11 is right
Material cutoff wavelength is answered to be 430nm；Green glow, z=0.24, respective material cutoff wavelength is 530nm；Ruddiness, z=0.36, corresponding material
Material cutoff wavelength is 650nm）, the N-shaped doping In of 0.3 μ m-thickyGa1-yThe unintentional doping high resistant of N contact layer 5,0.5 μ m-thick
InyGa1-y(respective material cutoff wavelength is 460nm to N absorbed layer 6 for blue light, y=0.14；Green glow, y=0.26, respective material is ended
Wavelength is 560nm；Ruddiness, y=0.36, respective material cutoff wavelength is 680nm), the N-shaped InGaN of the thick low doping concentration of 30nm
Component graded layer 7（Blue light：In component consecutive variations between 0.14-0.17；Green glow：In component is continuous between 0.26-0.28
Change；Ruddiness：In component consecutive variations between 0.36-0.38）, the unintentional doping high resistant In of 0.5 μ m-thickxGa1-xN doubles
Layer 8 (blue light：x=0.17；Green glow：x=0.28；Ruddiness：X=0.38), the p-type doping In of 0.1 μ m-thickxGa1-xN9（Blue light：x=
0.17；Green glow：x=0.28；Ruddiness：x=0.38）.Wherein N-shaped doping InzGa1-zN layer 4 functions simultaneously as the effect of window, only allows
Wavelength is more than N-shaped doping InzGa1-zThe optical signal of N material cutoff wavelength passes through, and enters into and is absorbed on absorbed layer 6, and and non-
Deliberately doping high resistant InyGa1-yThe cutoff wavelength of N absorbed layer limits response spectrum together so as to bandwidth is about 30nm (indigo plant
Light：430-460nm；Green glow：530-560nm；Ruddiness：650-680nm)；Meanwhile, the light induced electron-sky producing in absorbed layer 6
Cave centering, only hole can be mobile to dynode layer 8 under electric field action, advantageously form single carrier（Hole）Triggering avalanche increases
Benefit, thus realizing low noise, the making of the high-performance visible light detector of high-gain.
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not right
The restriction of embodiments of the present invention.For those of ordinary skill in the field, also may be used on the basis of the above description
To make other changes in different forms.There is no need to be exhaustive to all of embodiment.All this
Any modification, equivalent and improvement made within the spirit of invention and principle etc., should be included in the claims in the present invention
Protection domain within.
Claims (10)
1. a kind of absorption, dynode layer separate and have the visible ray avalanche photodetector of filter function it is characterised in that including
Substrate（1）, it is grown in substrate successively（1）On cushion（10）, unintentional doped gan layer（2）, N-shaped doped gan layer（3）, n
Type doping InzGa1-zN layer (4), N-shaped doping InyGa1-yN contact layer（5）, unintentional doping high resistant InyGa1-yN absorbed layer（6）,
The N-shaped In of low doping concentrationkGa1-kN component graded layer（7）, unintentional doping high resistant InxGa1-xN dynode layer（8）, p-type doping
InxGa1-xN layer（9）, incident optical signal is from substrate（1）Side is incident, described p-type doping InxGa1-xN layer（9）, unintentional doping
High resistant InxGa1-xN dynode layer（8）In component x=0-0.38.
2. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche optoelectronic spy of filter function
Survey device it is characterised in that：Described unintentional doped gan layer（2）Thickness be 0.5-5 μm.
3. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche optoelectronic spy of filter function
Survey device it is characterised in that：Described N-shaped doped gan layer（3）Thickness be 0.5-2 μm, electron concentration be 2 × 1017-3×
1018cm-3.
4. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche optoelectronic spy of filter function
Survey device it is characterised in that：Described N-shaped doping InzGa1-zThe thickness of N layer (4) be 0.1-0.8 μm, electron concentration be 2 ×
1017-3×1018cm-3.
5. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche optoelectronic spy of filter function
Survey device it is characterised in that：Described N-shaped doping InyGa1-yN contact layer（5）Thickness be 0.05-0.5 μm, electron concentration be 2
×1017-5×1018cm-3.
6. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche optoelectronic spy of filter function
Survey device it is characterised in that：Described unintentional doping high resistant InyGa1-yN absorbed layer（6）Thickness be 0.1-0.8 μm.
7. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche optoelectronic spy of filter function
Survey device it is characterised in that：The N-shaped In of described low doping concentrationkGa1-kN component graded layer（7）Thickness be 0.005-0.1 μ
M, electron concentration is 1 × 1017-2×1018cm-3.
8. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche optoelectronic spy of filter function
Survey device it is characterised in that：Described unintentional doping high resistant InxGa1-xN dynode layer（8）Thickness be 0.05-1 μm.
9. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche optoelectronic spy of filter function
Survey device it is characterised in that：Described p-type doping InxGa1-xN layer（9）Thickness be 0.01-0.3 μm, hole concentration be 2 ×
1017-5×1018cm-3.
10. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche optoelectronic spy of filter function
Survey device it is characterised in that：Unintentional doping high resistant InyGa1-yN absorbed layer（6）In component y=0.12-0.38；
N-shaped doping InzGa1-zIn component z=0.10-0.36 of N layer (4)；
N-shaped doping InzGa1-zIn component z of N layer (4) and unintentional doping high resistant InyGa1-yN absorbed layer（6）In component y full
Sufficient relation z<y；
P-type doping InxGa1-xN layer（9）, unintentional doping high resistant InxGa1-xN dynode layer（8）In component x and unintentional doping
High resistant InyGa1-yN absorbed layer（6）In component y meet relation x<y；
The N-shaped In of low doping concentrationkGa1-kComponent graded layer（7）In component k in the range of x-y consecutive variations.
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| CN101005105A (en) * | 2007-01-19 | 2007-07-25 | 南京大学 | Gallium nitride base resonant chamber reinforced ultravivlet photoelectric detector and preparing method |
| CN101814537A (en) * | 2009-02-19 | 2010-08-25 | 中国科学院半导体研究所 | Gallium nitride based avalanche detector and preparation method thereof |
| CN102820367A (en) * | 2012-09-11 | 2012-12-12 | 中山大学 | Gallium nitride (GaN) base avalanche photodetector based on heterostructure absorption and multiplication layer separation |
| CN103346196A (en) * | 2013-06-24 | 2013-10-09 | 华中科技大学 | Terahertz detector of multiple quantum well structure with tunable wavelength |
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| WO2008088018A1 (en) * | 2007-01-18 | 2008-07-24 | Nec Corporation | Semiconductor light-receiving device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101005105A (en) * | 2007-01-19 | 2007-07-25 | 南京大学 | Gallium nitride base resonant chamber reinforced ultravivlet photoelectric detector and preparing method |
| CN101814537A (en) * | 2009-02-19 | 2010-08-25 | 中国科学院半导体研究所 | Gallium nitride based avalanche detector and preparation method thereof |
| CN102820367A (en) * | 2012-09-11 | 2012-12-12 | 中山大学 | Gallium nitride (GaN) base avalanche photodetector based on heterostructure absorption and multiplication layer separation |
| CN103346196A (en) * | 2013-06-24 | 2013-10-09 | 华中科技大学 | Terahertz detector of multiple quantum well structure with tunable wavelength |
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| Title |
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| H. Jiang."Reduction of threading dislocations in AlGaN layers grown on AlN/sapphire templates using high-temperature GaN interlayer".《APPLIED PHYSICS LETTERS》.2005,第87卷第241911-1到241911-3页. * |
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