CN103996737A - Visible-light avalanche photodetector with isolated absorption layer and multiplication layer and filtering function - Google Patents
Visible-light avalanche photodetector with isolated absorption layer and multiplication layer and filtering function Download PDFInfo
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- CN103996737A CN103996737A CN201410190095.8A CN201410190095A CN103996737A CN 103996737 A CN103996737 A CN 103996737A CN 201410190095 A CN201410190095 A CN 201410190095A CN 103996737 A CN103996737 A CN 103996737A
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 22
- 238000001914 filtration Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 15
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 230000001960 triggered effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 230000004044 response Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
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- 230000003287 optical effect Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
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- 238000005247 gettering Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
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- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
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- 238000005265 energy consumption Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention relates to the technical field of a visible-light detector and more specifically, relates to a visible-light avalanche photodetector with an isolated absorption layer and multiplication layer and a filtering function. The visible-light avalanche photodetector with the isolated absorption layer and multiplication layer and the filtering function includes a substrate, and a buffer layer, an unintentional doped GaN layer, an n-type doped GaN layer, an n-type doped In<z>Ga<1-z>N layer, an n-type doped In<y>Ga<l-y>N contact layer, an unintentional doped high-resistance In<y>Ga<l-y>N absorption layer, a low-doping-density n-type In<y>Ga<l-y>N component graded layer, an unintentional doped high-resistance In<x>Ga<1-x>N multiplication layer and a p-type doped In<x>Ga<1-x>N layer, which grow on the substrate sequentially. The n-type doped In<z>Ga<1-z>N layer is used to play a window layer role and only allows light signals, the wavelength of which is larger than the cut-off wavelength of the In<z>Ga<1-z>N material, to pass and then the light signals are absorbed when entering the absorption layer and thus a filtering role is played. The isolation of the light absorption layer and the multiplication layer is beneficial to the avalanche gain triggered by a current carrier (cavity) so that integration of a high-performance visible-light photodetector which is low in noise and high in gain and a single chip of a filter is realized.
Description
Technical field
The present invention relates to the technical field of visible-light detector, more specifically, relate to a kind of absorption, dynode layer and separate and have the visible ray avalanche photodetector of filter function.
Background technology
In recent years, mobile device grows with each passing day to the demand of wireless data, and network resource of frequency range trend is exhausted, and network interferences and security problems are also increasingly serious.Along with the development of technology, visible light communication (Visible Light Communication, VLC) technology is risen gradually.This technology be utilize that white light emitting diode (LED) is low in energy consumption, long service life and the characteristic such as modularity is good, response sensitivity is high, in adopting it as illumination, signal is modulated on visible light beam and is transmitted, realize illumination and the dual-use function of communicating by letter.Than the short-distance wireless communication such as bluetooth, Wi-Fi, it is high that VLC technology has (1) message transmission rate; (2) level security is good; (3) without harmful radio-frequency radiation; (4) without series of advantages such as wireless frequency spectrum licenses.But in the practical application of VLC technology, being also faced with some problems needs to solve: exist strong background noise in VLC system; Meanwhile, along with the increasing of transmission range, the angle deviating of additional transmitting terminal and receiving terminal, the signal that detector receives is very faint; Moreover LED light source number is more in communication environment, between information source and detector, there are some different light paths, this will cause intersymbol interference.And the Si base adopting in VLC system now, AlGaAs, GaP base detector, not only exist the problem that peak value of response and light source main light emission wavelength detectivity inconsistent and that cause are low, but also exist the shortcoming that cost increases, volume increases, filter weakens incident optical signal causing because of the additional optical filter of needs.For the problems referred to above, be to ensure communication quality, urgently research and develop highly sensitive, low noise and there is the novel photoelectric-detection device of filtering characteristic.In current VLC technology, white light LEDs is as light source, and its main luminous form is to excite yellow fluorescent powder to realize by (1) InGaN blue light emitting LED; (1) InGaN blue light, green light LED and the combination of AlGaInP red-light LED, by RGB (RGB) three primary colors synthesize white light.Therefore, prepare photodetector using InGaN as photosensitive material, there is the light source emission spectrum inherent advantage consistent with detector absorption spectrum.But, the InGaN visible-light detector of development is the photovoltaic detector based on LED quantum well structure, metal-semiconductor-metal (MSM) structure, metal-insulator layer-semiconductor (MIS) structure substantially at present, does not all reach the application request of VLC system in filtering characteristic and detectivity.
Summary of the invention
The present invention is at least one defect overcoming described in above-mentioned prior art, and visible ray avalanche photodetector a kind of integrated incident light filtering and photoelectric current gain function, absorbed layer and dynode layer isolating construction is provided.Light signal is (substrate one side) incident from the back side, N-shaped doping In
zga
1-zn layer serves as the effect of Window layer, only allows wavelength to be greater than In
zga
1-zthe incident light of N material cut-off wavelength by and enter into In
yga
1-yn absorbed layer, In
zga
1-zn Window layer and In
yga
1-ythe cut-off wavelength of N absorbed layer determines the wave-length coverage of spectral response jointly, thereby can make explorer response spectrum consistent with light source led luminous spectrum, plays the integrated effect of detector and filter.Above-mentioned signal is at In
yga
1-yin N Intrinsic Gettering layer, be absorbed, inspire electron hole pair, under the effect of applied reverse bias voltage, electronics is collected into N-shaped GaN layer one side, and hole is transported to the dynode layer with high electric field, thereby triggering avalanche punctures, complete single charge carrier (hole) and trigger, thereby improved device at In
yga
1-ythe optical responsivity (detectivity) of the corresponding wave band of N, finally realizes the visible ray avalanche photodetector of wavelength selection, low noise, high-gain, high detection sensitivity.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of absorption, dynode layer separate and have the visible ray avalanche photodetector of filter function, wherein, comprise substrate, utilize the external regular way of metal organic chemical vapor deposition extension (or molecular beam epitaxial growth method) to be grown in successively the resilient coating on substrate, involuntary Doped GaN layer, N-shaped Doped GaN layer, N-shaped doping In
zga
1-zn layer, N-shaped doping In
yga
1-yn contact layer, involuntary doping high resistant In
yga
1-yn absorbed layer, the N-shaped In of low doping concentration
yga
1-yn component graded layer, involuntary doping high resistant In
xga
1-xn dynode layer, p-type doping In
xga
1-xn layer.
Resilient coating is defect, stress and dislocation during for reducing Material growth, reduces lattice mismatch coefficient and thermal coefficient of expansion, has ensured the superperformance of epitaxial loayer; The thickness of involuntary Doped GaN layer is 0.5-5 μ m; N-shaped Doped GaN layer thickness is 0.5-2 μ m, and electron concentration is 2 × 10
17-3 × 10
18cm
-3; N-shaped doping In
zga
1-zn layer thickness 0.1-0.8 μ m, electron concentration is 2 × 10
17-3 × 10
18cm
-3; N-shaped doping In
yga
1-yn contact layer thickness 0.05-0.5 μ m, electron concentration is 2 × 10
17-5 × 10
18cm
-3; Involuntary doping high resistant In
yga
1-ythe preferred thickness of N absorbed layer is 0.1-0.8 μ m, its role is to absorb light signal and produces electron hole pair, and under reverse-biased electric field action, electronics is to N-shaped layer drift and collected by N-shaped Ohm contact electrode, and hole is to the N-shaped In of low doping concentration
yga
1-yn component graded layer moves; The N-shaped In of low doping concentration
yga
1-ythe thickness of N component graded layer is 0.005-0.1 μ m, and electron concentration is 1 × 10
17-2 × 10
18cm
-3, compare other obviously attenuation of layer, its role is to absorbed layer to separate with dynode layer, hole is transported to dynode layer fast by this layer, meanwhile slows down In
xga
1-xn and In
yga
1-yn layer can be with sudden change degree, suppress charge carrier in the accumulation of heterojunction boundary; Involuntary doping high resistant In
xga
1-xthe thickness of N dynode layer is 0.05-1 μ m, wherein In component x=0-0.5.This dynode layer provides high reverse-biased electric field, and the hole that makes to enter in multiplication region obtains enough kinetic energy, and the ionization that bumps, realizes avalanche gain; Finally p-type doping In
xga
1-xthe thickness of N layer is 0.01-0.3 μ m, and hole concentration is 2 × 10
17-5 × 10
18cm
-3.
In the present invention, substrate should be selected the material to visible transparent, as sapphire, SiC, GaN, AlN, LiGaCO
2or LiAlCO
2deng, the materials such as unavailable Si, GaAs.
Compared with prior art, beneficial effect is: the present invention has adopted In
zga
1-zn layer, as filter window layer, only allows wavelength to be greater than In
zga
1-zthe incident optical signal of N cut-off wavelength passes through, and enters into In
yga
1-yin N absorbed layer, excite photo-generated carrier, and jointly determined the band-pass response scope of incident light by the cut-off wavelength of Window layer and absorbed layer; On the other hand, in structure, introduce the N-shaped In of low doping concentration
yga
1-yn graded layer and involuntary doping high resistant In
xga
1-xn dynode layer forms absorption multiplication isolating construction, produces the avalanche optoelectronic effect of low noise, high-gain, thereby realizes the high sensitivity visible-light detector that has filtering and low noise avalanche gain function concurrently.
In addition, it is emphasized that visible-light detector of the present invention is also applicable to light signal from positive (p-type doping In
xga
1-xn layer) situation of incident.Wherein absorb, the corresponding epitaxial loayer of dynode layer with carry on the back when incident identically, i.e. the light signal of positive incident is at In
yga
1-yin N Intrinsic Gettering layer, be absorbed, inspire electron hole pair, under the effect of applied reverse bias voltage, electronics is collected into N-shaped GaN layer one side, and hole is transported to dynode layer (the involuntary doping high resistant In with high electric field
xga
1-xn layer) triggering avalanche punctures, triggers thereby realize single charge carrier.Meanwhile, for realizing filter function, p-type doping In
xga
1-xn layer and involuntary doping high resistant In
xga
1-xn dynode layer need be born the effect of Window layer simultaneously, therefore needs to readjust each In
xga
1-xin component in N layer, makes it meet x<y, now only has wavelength place to be greater than In
xga
1-xthe light signal of N material cut-off wavelength enters absorbed layer, In
xga
1-xn and In
yga
1-ydifference between N material cut-off wavelength is the wave-length coverage of spectral response.The panel detector structure that meets above-mentioned condition meets absorption equally, dynode layer separates, and also has filter function.In this explanation, above-mentioned normal incidence formula panel detector structure and working method thereof are also contained in this patent.
Brief description of the drawings
Fig. 1 is the structural representation that absorption of the present invention, dynode layer separated and had the visible ray avalanche photodetector of filter function.
Embodiment
Accompanying drawing, only for exemplary illustration, can not be interpreted as the restriction to this patent; For better explanation the present embodiment, some parts of accompanying drawing have omission, zoom in or out, and do not represent the size of actual product; To those skilled in the art, in accompanying drawing some known features and explanation thereof may to omit be understandable.In accompanying drawing, describe position relationship only for exemplary illustration, can not be interpreted as the restriction to this patent.
As shown in Figure 1, the visible ray avalanche photodetector that the method is applicable to make absorption, dynode layer separation and has filter function, light signal is (substrate) incident from bottom to top from back, wherein N-shaped doping In
zga
1-zn layer 4 has filter action, and chosen wavelength range surrounds but is not limited to: blue light 430 ~ 470nm; Green glow 530 ~ 570nm; Ruddiness 650 ~ 690nm.
In the present embodiment, a kind of absorption, dynode layer separate and have the visible ray avalanche photodetector of filter function, wherein, comprise substrate 1, utilize the external regular way of metal organic chemical vapor deposition extension (or molecular beam epitaxial growth method), the low temperature GaN resilient coating of 25nm and the involuntary Doped GaN resilient coating of the high temperature of 2 μ m of growth on substrate 1 successively, the involuntary Doped GaN layer 2 that 2 μ m are thick, the thick N-shaped doping In of N-shaped Doped GaN layer 3,0.5 μ m that 0.5 μ m is thick
zga
1-zn layer 4(blue light, z=0.11, respective material cut-off wavelength is 430nm; Green glow, z=0.24, respective material cut-off wavelength is 530nm; Ruddiness, z=0.36, respective material cut-off wavelength is 650nm), the N-shaped doping In that 0.3 μ m is thick
yga
1-ythe involuntary doping high resistant In that N contact layer 5,0.5 μ m are thick
yga
1-y(respective material cut-off wavelength is 460nm to N absorbed layer 6 for blue light, y=0.14; Green glow, y=0.26, respective material cut-off wavelength is 560nm; Ruddiness, y=0.36, respective material cut-off wavelength is 680nm), the N-shaped In of the low doping concentration that 30nm is thick
yga
1-yn component graded layer 7(blue light: In component changes continuously between 0.14-0.17; Green glow: In component changes continuously between 0.26-0.28; Ruddiness: In component changes continuously between 0.36-0.38), the involuntary doping high resistant In that 0.5 μ m is thick
xga
1-xn dynode layer 8 (blue light: x=0.17; Green glow: x=0.28; Ruddiness: x=0.38), the p-type doping In that 0.1 μ m is thick
xga
1-xn9(blue light: x=0.17; Green glow: x=0.28; Ruddiness: x=0.38).Wherein N-shaped doping In
zga
1-zn layer 4 serves as the effect of window simultaneously, only allows wavelength to be greater than N-shaped doping In
zga
1-zthe light signal of N material cut-off wavelength passes through, and enter on absorbed layer 6 and be absorbed, and and involuntary doping high resistant In
yga
1-ythe cut-off wavelength of N absorbed layer limits response spectrum together, makes its bandwidth be approximately 30nm (blue light: 430-460nm; Green glow: 530-560nm; Ruddiness: 650-680nm); Simultaneously, light induced electron-hole the centering producing in absorbed layer 6, only has hole under electric field action, to move to dynode layer 8, is conducive to form the gain of single charge carrier (hole) triggering avalanche, thereby realize low noise, the making of the high-performance visible light detector of high-gain.
Obviously, the above embodiment of the present invention is only for example of the present invention is clearly described, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also giving exhaustive to all execution modes.All any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in the protection range of the claims in the present invention.
Claims (10)
1. the visible ray avalanche photodetector absorb, dynode layer separating and have filter function, is characterized in that, comprises substrate (1), be grown in successively the resilient coating (10) on substrate (1), involuntary Doped GaN layer (2), N-shaped Doped GaN layer (3), N-shaped doping In
zga
1-zn layer (4), N-shaped doping In
yga
1-yn contact layer (5), involuntary doping high resistant In
yga
1-yn absorbed layer (6), the N-shaped In of low doping concentration
yga
1-yn component graded layer (7), involuntary doping high resistant In
xga
1-xn dynode layer (8), p-type doping In
xga
1-xn layer (9).
2. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche photodetector of filter function, it is characterized in that: the thickness of described involuntary Doped GaN layer (2) is 0.5-5 μ m.
3. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche photodetector of filter function, it is characterized in that: the thickness of described N-shaped Doped GaN layer (3) is 0.5-2 μ m, and electron concentration is 2 × 10
17-3 × 10
18cm
-3.
4. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche photodetector of filter function, it is characterized in that: described N-shaped doping In
zga
1-zthe thickness of N layer (4) is 0.1-0.8 μ m, and electron concentration is 2 × 10
17-3 × 10
18cm
-3.
5. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche photodetector of filter function, it is characterized in that: described N-shaped doping In
yga
1-ythe thickness of N contact layer (5) is 0.05-0.5 μ m, and electron concentration is 2 × 10
17-5 × 10
18cm
-3.
6. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche photodetector of filter function, it is characterized in that: described involuntary doping high resistant In
yga
1-ythe thickness of N absorbed layer (6) is 0.1-0.8 μ m.
7. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche photodetector of filter function, it is characterized in that: the N-shaped In of described low doping concentration
yga
1-ythe thickness of N component graded layer (7) is 0.005-0.1 μ m, and electron concentration is 1 × 10
17-2 × 10
18cm
-3.
8. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche photodetector of filter function, it is characterized in that: described involuntary doping high resistant In
xga
1-xthe thickness of N dynode layer (8) is 0.05-1 μ m.
9. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche photodetector of filter function, it is characterized in that: described p-type doping In
xga
1-xthe thickness of N layer (9) is 0.01-0.3 μ m, and hole concentration is 2 × 10
17-5 × 10
18cm
-3.
10. a kind of absorption according to claim 1, dynode layer separate and have the visible ray avalanche photodetector of filter function, it is characterized in that: described involuntary doping high resistant In
xga
1-xthe In component x=0-0.5 of N dynode layer (8);
Involuntary doping high resistant In
yga
1-ythe In component y=0-0.5 of N absorbed layer (6);
N-shaped doping In
zga
1-zthe In component z=0-0.5 of N layer (4);
N-shaped doping In
zga
1-zthe In component z of N layer (4) and involuntary doping high resistant In
yga
1-ythe In component y of N absorbed layer (6) meets and is related to z<y;
The N-shaped In of low doping concentration
yga
1-ythe In component of N component graded layer (7) changes continuously within the scope of x-y.
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|---|---|---|---|
| CN201410190095.8A CN103996737B (en) | 2014-05-07 | 2014-05-07 | Visible-light avalanche photodetector with isolated absorption layer and multiplication layer and filtering function |
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| CN201410190095.8A CN103996737B (en) | 2014-05-07 | 2014-05-07 | Visible-light avalanche photodetector with isolated absorption layer and multiplication layer and filtering function |
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Cited By (1)
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| CN109244152A (en) * | 2018-08-02 | 2019-01-18 | 深圳市芯思杰智慧传感技术有限公司 | A kind of short haul connection high-speed photodiode chip and preparation method thereof |
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| CN103996737B (en) | 2017-02-15 |
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