CN109494275B - AlGaN-based solar blind ultraviolet phototransistor detector and manufacturing method thereof - Google Patents

AlGaN-based solar blind ultraviolet phototransistor detector and manufacturing method thereof Download PDF

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CN109494275B
CN109494275B CN201811398729.3A CN201811398729A CN109494275B CN 109494275 B CN109494275 B CN 109494275B CN 201811398729 A CN201811398729 A CN 201811398729A CN 109494275 B CN109494275 B CN 109494275B
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algan
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blind ultraviolet
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CN109494275A (en
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陈一仁
宋航
张志伟
缪国庆
蒋红
李志明
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Abstract

The invention discloses an AlGaN-based solar blind ultraviolet phototransistor detector which sequentially comprises a buffer layer, a superlattice layer, a window layer, a collector, a base and an emitter from a substrate to the outside, wherein the base is a base consisting of a multi-period p-AlGaN/Mg-layer; the multi-period p-AlGaN/Mg-layer is a structure formed by alternately overlapping a p-AlGaN layer and a Mg-layer for a plurality of periods; the multicycle p-AlGaN/Mg-layer is a hierarchical structure subjected to annealing treatment. The AlGaN-based solar blind ultraviolet phototransistor detector solves the problems of high impedance, low hole concentration and low hole mobility of a base P-type AlGaN material of the AlGaN-based solar blind ultraviolet phototransistor detector, has thicker base than the prior art, and forms a collector junction depletion region with stronger light absorption capacity, thereby obtaining the high-gain AlGaN-based solar blind ultraviolet phototransistor detector. The invention also provides a manufacturing method of the AlGaN-based solar blind ultraviolet phototransistor detector with the beneficial effect.

Description

AlGaN-based solar blind ultraviolet phototransistor detector and manufacturing method thereof
Technical Field
The invention relates to the field of semiconductor photoelectric detectors, in particular to an AlGaN-based solar blind ultraviolet phototransistor detector and a manufacturing method thereof.
Background
In recent years, with the development of science and technology, means for acquiring optical information have been diversified. Because the ozone in the atmospheric stratosphere has strong absorption effect on the deep ultraviolet band with the wavelength between 280nm and 200nm in the solar radiation, the solar radiation in the band can hardly reach the vicinity of the earth surface, and a solar blind ultraviolet spectrum band without interference of natural solar radiation is provided for people. The solar blind ultraviolet band creates favorable conditions for realizing efficient and accurate optical information capture and detection of unnatural factors. The solar blind ultraviolet photoelectric detector working in the waveband becomes a novel optical information acquisition means and is concerned, and the requirements in various fields such as military, civil use, scientific research and the like are increasingly strengthened. .
However, the existing AlGaN-based solar blind ultraviolet phototransistor cannot be separated from the p-type AlGaN material with high Al composition. Because ultraviolet light needs a highly doped p-type AlGaN material so as to only absorb ultraviolet light in a target frequency band and reduce interference, in fact, a high Al component p-AlGaN is always a root cause for restricting the development of AlGaN-based short-wavelength photoelectric devices, mainly because the activation energy of Mg dopant in p-AlGaN increases with the increase of Al component in AlGaN material and is difficult to effectively activate, and it has been proved that Mg atoms in a conventional uniform doping process form a stable Mg-H complex with hydrogen atoms in a reaction chamber during a doping reaction process to inhibit Mg atoms from providing an acceptor, so that holes are difficult to generate, which results in high impedance, low hole concentration and low hole mobility of the p-type AlGaN material serving as a base, and the requirements of a phototransistor are difficult to achieve, therefore, in the prior art, the p-type AlGaN material of the base is usually made to be very thin, but the light absorption capability of a collector junction depletion region formed by the p-type AlGaN material is very limited, therefore, it is difficult to obtain a high-gain AlGaN-based solar blind ultraviolet phototransistor detector using the conventional structure.
Disclosure of Invention
The invention aims to provide an AlGaN-based solar blind ultraviolet phototransistor detector and a manufacturing method thereof, and solves the problem that in the prior art, a high-gain AlGaN-based solar blind ultraviolet phototransistor detector is difficult to obtain due to the fact that a p-type AlGaN material of a base is too thin.
In order to solve the technical problem, the invention provides an AlGaN-based solar blind ultraviolet phototransistor detector which sequentially comprises a buffer layer, a superlattice layer, a window layer, a collector, a base and an emitter from a substrate to the outside, wherein the base is a base consisting of a multi-period p-AlGaN/Mg-layer;
the multi-period p-AlGaN/Mg-layer is a structure formed by alternately overlapping a p-AlGaN layer and a Mg-layer for a plurality of periods;
the multicycle p-AlGaN/Mg-layer is a hierarchical structure subjected to annealing treatment.
Optionally, in the AlGaN-based solar blind ultraviolet phototransistor detector, a thickness of a p-AlGaN layer in the multi-period p-AlGaN/Mg-layer ranges from 12 nm to 15 nm inclusive, and an Al component concentration of the p-AlGaN layer ranges from 0.45 to 0.55 inclusive;
the thickness of the Mg-layer in the multi-period p-AlGaN/Mg-layer ranges from 3 nanometers to 5 nanometers, inclusive.
Optionally, in the AlGaN-based solar blind ultraviolet phototransistor detector, the number of periods of the multi-period p-AlGaN/Mg-layer ranges from 3 periods to 5 periods, inclusive.
Optionally, in the AlGaN based solar blind ultraviolet phototransistor detector, the AlGaN based solar blind ultraviolet phototransistor detector further includes a low dimensional light absorption layer;
the low dimensional light absorption layer is disposed between the collector and the base.
Optionally, in the AlGaN-based solar blind ultraviolet phototransistor detector, the low dimensional light absorption layer is p-AlxGa1-xN/p-AlyGa1-yN quantum well or p-AlxGa1-xN/p-AlyGa1-yAn N superlattice.
Optionally, in the AlGaN-based solar blind ultraviolet phototransistor detector, when the low dimensional light absorption layer is p-AlxGa1-xN/p-AlyGa1-yN quantum well, p-Al of potential well layerxGa1-xThe thickness of N is in the range of 3 nm to 5 nm, inclusive, the barrier layer p-AlyGa1-yThe thickness of N is 8 nanometers to 10 nanometers, inclusive;
when the low dimensional light absorption layer is p-AlxGa1-xN/p-AlyGa1-yIn the case of N superlattice, p-AlxGa1-xN layer and p-AlyGa1-yThe thickness of the N layer ranges from 3 nm to 5 nm, inclusive.
The invention also provides a manufacturing method of the AlGaN-based solar blind ultraviolet phototransistor detector, which comprises the following steps:
providing a substrate;
sequentially arranging a buffer layer, a superlattice layer, a window layer and a collector on the substrate;
arranging a plurality of overlapped P-AlGaN layers and Mg-layers on the surface of the collector, wherein the number of the P-AlGaN layers is the same as that of the Mg-layers, and the plurality of overlapped P-AlGaN layers and Mg-layers are called multi-period P-AlGaN/Mg-pretreatment layers;
annealing the multi-period P-AlGaN/Mg-pretreatment layer to obtain a multi-period P-AlGaN/Mg-layer;
and arranging an emitter on the surface of the multi-period p-AlGaN/Mg-layer to obtain the AlGaN-based solar blind ultraviolet phototransistor detector.
Optionally, in the method for manufacturing the AlGaN-based solar blind ultraviolet phototransistor detector, a temperature range when the multi-period p-AlGaN/Mg-pretreatment layer is annealed is 700 to 850 degrees celsius, inclusive.
Optionally, in the method for manufacturing an AlGaN-based solar blind ultraviolet phototransistor detector, after sequentially disposing a buffer layer, a superlattice layer, a window layer, and a collector on the substrate, the method further includes:
arranging a low-dimensional light absorption layer on the surface of the collector;
the step of arranging the multi-period p-AlGaN/Mg-pretreatment layer on the surface of the collector comprises the following steps:
and arranging a multi-period p-AlGaN/Mg-pretreatment layer on the surface of the low-dimensional light absorption layer.
Optionally, in the method for manufacturing the AlGaN-based solar blind ultraviolet phototransistor detector, the step of disposing the low-dimensional light absorption layer on the surface of the collector electrode specifically includes:
periodic regulation at constant temperature IIIGa/ⅢAlThe molar flow ratio is controlled, and the growth time is controlled so as to adjust the p-Al in each periodxGa1-xN layer and p-AlyGa1-yOf thickness of N layerThe purpose is.
The AlGaN-based solar blind ultraviolet phototransistor detector provided by the invention sequentially comprises a buffer layer, a superlattice layer, a window layer, a collector, a base and an emitter from a substrate to the outside, wherein the base is a base consisting of a multi-period p-AlGaN/Mg-layer; the multi-period p-AlGaN/Mg-layer is a structure formed by alternately overlapping a p-AlGaN layer and a Mg-layer for a plurality of periods; the multicycle p-AlGaN/Mg-layer is a hierarchical structure subjected to annealing treatment. The AlGaN-based solar blind ultraviolet phototransistor detector adopts periodic ultrathin Mg uniformly doped p-AlGaN and high-concentration Mg-doped and is assisted with a subsequent high-temperature thermal diffusion annealing method to prepare the base electrode of the AlGaN-based solar blind ultraviolet phototransistor. By periodic high-concentration Mg-doping technology, a thin-layer uniform Mg doping and high-concentration Mg-doping alternating structure is formed, high-concentration Mg dopant is limited in an extremely thin interlayer, through high-temperature thermal diffusion, the Mg-thin layer diffuses to the low Mg concentration areas at two sides, the defect that Mg dopant is difficult to be incorporated into AlGaN material crystal lattices with high Al component in the conventional uniform doping process is overcome, meanwhile, in the high-temperature diffusion process, Mg-H bonds are destroyed, Mg doped atoms form an acceptor, the problems of high impedance, low hole concentration and low hole mobility of a base P-type AlGaN material of the AlGaN-based solar blind ultraviolet phototransistor detector are solved, the base of the AlGaN-based solar blind ultraviolet phototransistor detector is thicker than that of the prior art, the light absorption capability of the formed collector junction depletion region is stronger, and the high-gain AlGaN-based solar blind ultraviolet phototransistor detector can be obtained.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an embodiment of an AlGaN-based solar blind ultraviolet phototransistor detector provided by the present invention;
fig. 2 is a schematic structural diagram of another embodiment of the AlGaN-based solar blind ultraviolet phototransistor detector provided by the present invention;
fig. 3 is a schematic flowchart of a method for manufacturing an AlGaN-based solar blind ultraviolet phototransistor detector according to an embodiment of the present invention;
fig. 4 is a schematic flow chart of another specific embodiment of the method for manufacturing the AlGaN-based solar blind ultraviolet phototransistor detector.
Detailed Description
To avoid misunderstandings, it should be particularly reminded that P-AlGaN in this application refers to P-type AlGaN.
The photoelectric detector is an important carrier for acquiring optical information, and plays an important role in national economic construction, national defense construction and various fields of daily life of people. For the definition and advantages of solar-blind ultraviolet, please refer to the above, which is not repeated herein, and several solar-blind ultraviolet band photodetectors commonly used in the prior art are described in detail below.
The current mature and commercial solar-blind ultraviolet band photodetectors mainly comprise vacuum photomultiplier tubes (PMT) based on a multi-alkali metal photocathode and silicon-based photodiodes. Although the PMT has the characteristics of high gain, low noise and fast response, the PMT, as a vacuum device, is greatly limited in many practical application fields due to the factors of being large in size, fragile, high in operating voltage, weak in electromagnetic interference resistance, and having to configure a complex and expensive filter to realize interference-free solar blind ultraviolet detection. For the silicon-based photodiode, although the advantages of all solid state, small volume and low cost are achieved, the silicon material has a narrow band gap (only 1.12eV), is sensitive to visible light and infrared radiation, and cannot play the advantage of interference-free detection of solar-blind ultraviolet information. Moreover, in order to suppress the interference of visible light and infrared radiation, a solar blind ultraviolet band pass filter with a high cut-off ratio has to be adopted. However, the solar-blind ultraviolet band-pass filter which has the best performance and can meet the requirements of engineering application in the international market at present has the transmittance of the solar-blind ultraviolet band of only 10 percent, and greatly limits the detection capability of the silicon-based photodiode on weak solar-blind ultraviolet signals.
In order to overcome the technical limitation of the existing solar blind ultraviolet photoelectric detector, the most effective way is to fully utilize the property that a semiconductor material can only absorb photons with energy larger than the forbidden bandwidth of the semiconductor material, and develop the solar blind ultraviolet photoelectric detector with spectral response and intrinsic cutoff in an all-solid state. Among them, the semiconductor material of most interest is an AlGaN compound semiconductor. AlGaN has the following important characteristics: belongs to a direct band gap wide bandgap semiconductor; the forbidden bandwidth can be continuously adjusted from 3.4eV of GaN to 6.2eV of AlN by adjusting Al component, when the Al component is more than 45%, the forbidden bandwidth of AlGaN is more than 4.4eV, the spectral response eigen is cut off at 280nm, and the response spectrum covers the solar blind ultraviolet band of 280-200 nm; the breakdown electric field is high; the physical and chemical stability is good, and the method is suitable for severe environments; the solar blind ultraviolet photoelectric detector has strong radiation resistance and the like, and is an ideal material for realizing an intrinsic cut-off all-solid solar blind ultraviolet photoelectric detector.
However, because the photon energy of the solar blind ultraviolet band is far larger than that of the visible light and the infrared light, the number of the solar blind ultraviolet photons is far less than that of the visible light and the infrared light under the same irradiation power. Moreover, since the ultraviolet light signals are strongly rayleigh scattered and attenuated when propagating in the atmosphere, in general, the ultraviolet light signals to be detected, especially solar blind ultraviolet light signals, which are propagated at a long distance are severely attenuated before being captured by the detector, and thus the optical signals faced by the solar blind ultraviolet light detector are usually extremely weak. For the traditional PN or PIN structure and Schottky structure non-photoelectric gain type AlGaN-based solar blind ultraviolet photoelectric detector, the detection of extremely weak light signals cannot be realized, so that the requirement of practical engineering application cannot be met. The best solution to this problem is to develop AlGaN based solar blind uv photodetectors with internal gain.
Currently, AlGaN-based solar blind ultraviolet photodetectors with internal photoelectric gain mainly include Avalanche Photodiodes (APDs), vacuum photomultiplier tubes (AlGaN-PMTs) of cesium-activated Negative Electron Affinity (NEA) AlGaN photocathodes, and NPN-type phototransistors (NPN-PTs). For the avalanche photodiode, high reverse bias voltage is applied to two ends of the diode in the working process, and a strong enough electric field is generated in a depletion region of the avalanche photodiode, so that photo-generated electron-hole pairs in the depletion region generate collision ionization under the action of the strong electric field, and the avalanche multiplication effect is realized, thereby obtaining high gain. However, for AlGaN-based solar blind ultraviolet avalanche photodiodes, due to the lack of AlGaN single crystal material, the material is typically prepared on a foreign substrate such as an AlN template using a heteroepitaxial method, such as Metal Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), or Molecular Beam Epitaxy (MBE). Lattice mismatch and thermal expansion mismatch of heteroepitaxy cause high density of dislocations in the AlGaN epitaxial material, and the dislocations act as leakage channels and photocarrier annihilation centers, so that the avalanche photodiode has high dark current under high reverse bias. In addition, in the avalanche generation process, noise caused by dark current is amplified at the same time, and the avalanche multiplication effect is at the cost of noise increase, so that the practical process of the AlGaN-based solar blind ultraviolet avalanche photodiode is to optimize the crystal quality of the material and improve the signal-to-noise ratio. As for a vacuum photomultiplier of a cesium-activated negative electron affinity AlGaN photocathode, the vacuum photomultiplier serving as a non-all-solid-state vacuum photoelectric device cannot solve the problems of large size, fragility and high working voltage, and also faces the more critical problem of the service life of the photocathode. The activation by adopting the metal cesium is a main way for obtaining the negative electron affinity, however, the high chemical activity of the metal cesium can cause destructive pollution to the AlGaN photocathode by residual gas molecules and ions sputtered by an electron bombardment anode even in an ultrahigh vacuum environment, so that the service life is short.
For the NPN type phototransistor, in addition to the advantage of all-solid-state intrinsic cut-off, when the NPN type phototransistor is irradiated by light, the light absorption region (depletion layer formed by the base and collector region) of the phototransistor forms a photocurrent, and the photo-generated current acts on the emitter junction instead of the conventional electrical injection current, so that the phototransistor obtains an amplified current signal in the collector loop, thereby having an induced gain. And dark current without illumination of the phototransistor is reverse leakage current (penetration current) flowing through the collector, and since the phototransistor is equivalent of two back-to-back PN junctions, the reverse leakage current is usually small. Furthermore, the NPN phototransistor does not need to operate under avalanche breakdown conditions and is relatively unaffected by dislocation defects in the epitaxial material. It can be said that NPN-type phototransistors are an effective way to develop AlGaN-based solar blind ultraviolet photodetectors with internal gain.
However, the NPN-type AlGaN-based solar blind ultraviolet phototransistor does not have a p-type AlGaN material with a high Al composition. In fact, p-type AlGaN with high Al content has been a source for restricting the development of short wavelength optoelectronic devices based on AlGaN, and is mainly due to the fact that the activation energy of Mg dopants in p-AlGaN increases with the increase of Al content in AlGaN materials, which makes effective activation difficult, and that Mg atoms in a conventional uniform doping process have been proven to form a stable Mg-H complex with hydrogen atoms in a reaction chamber during a doping reaction process, thereby inhibiting the Mg atoms from providing an acceptor, and thus making it difficult to generate holes. This means that it is difficult to obtain a p-type AlGaN material having a high Al composition satisfying the requirements of the phototransistor using the conventional uniform doping process. In addition, the NPN-type AlGaN-based solar blind ultraviolet phototransistor must work in an amplification region to realize high gain and actually reflect the change of the detected optical signal intensity. While operating in the amplification region presupposes that the emitter junction of the phototransistor needs to inject a sufficient photocurrent. Conventional phototransistors utilize a collector junction depletion region in reverse bias to absorb incident light and generate photo-generated electron-hole pairs. The photo-generated electron-hole pairs are separated under the reverse bias of a collector junction, wherein electrons are conveyed to the collector, holes are conveyed to a base, enough holes are gathered at an emitter junction to effectively reduce a conduction band barrier of the emitter junction, and finally, current pointing to the direction of the base from the collector is formed and injected into an emitter, so that the phototransistor works in an amplification region. However, the base p-type material of the conventional NPN-type AlGaN-based solar blind ultraviolet phototransistor is obtained by using a uniform p-type doping process, and in order to avoid the influence of a base with high impedance, low hole concentration and low hole mobility on the performance of the phototransistor device, the base p-type AlGaN is usually made to be thin, and the light absorption capability of a collector junction depletion region formed by the base p-type AlGaN is limited. And because the number of solar blind ultraviolet photons is far less than that of visible light and infrared light under the same irradiation power, even if the photoelectric conversion efficiency is 100%, namely one photon generates a pair of electron-hole pairs, the number of the electron-hole pairs is far less than that of the visible light and the infrared light, the detected optical signal is very weak, and the AlGaN material has a large number of dislocation defects, so that annihilation occurs in the process of separating and transporting photon-generated electrons and holes, and therefore, a high-gain AlGaN-based solar blind ultraviolet photodetector is difficult to obtain by adopting a conventional NPN type phototransistor structure.
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The core of the invention is to provide an AlGaN-based solar blind ultraviolet phototransistor detector, the structure schematic diagram of the first specific embodiment of which is shown in FIG. 1, the detector sequentially comprises a buffer layer 102, a superlattice layer 103, a window layer 104, a collector 105, a base 107 and an emitter 108 from a substrate 101 to the outside, and the base 107 is a base 107 composed of a multi-period p-AlGaN/Mg-layer;
the multi-period p-AlGaN/Mg-layer is a structure formed by alternately overlapping a p-AlGaN layer and a Mg-layer for a plurality of periods;
the multicycle p-AlGaN/Mg-layer is a hierarchical structure subjected to annealing treatment.
A thickness of a p-AlGaN layer in the multi-period p-AlGaN/Mg-layer ranges from 12 nanometers to 15 nanometers, inclusive, such as any one of 12.0 nanometers, 13.0 nanometers, or 15.0 nanometers; the range of the doping concentration of Mg in the p-AlGaN layer is 1 multiplied by 1017cm-3To 5X 1017cm-3Including end points, e.g. 1.0X 1017cm-3、3.0×1017cm-3Or 5.0X 1017cm-3Any one of them.
The p-AlGaN layer in the multi-period p-AlGaN/Mg-layer has an Al composition concentration in a range of 0.45 to 0.55, inclusive, such as any of 0.450, 0.463, or 0.550; the thickness ranges from 3 nanometers to 5 nanometers, inclusive, such as any of 3.0 nanometers, 4.0 nanometers, or 5.0 nanometers.
The multi-period p-AlGaN/Mg-layer has a period number ranging from 3 layers to 5 layers, inclusive, such as any one of 3.0, 4.0, or 5.0.
The emitter 108 is Si-doped AlxGa1-xN, an Al composition in a range of 0.45 to 0.50, inclusive, such as any of 0.450, 0.466, or 0.500; the range of Si doping concentration is 5X 1018cm-3To 5X 1019cm-3Including end points, e.g. 5.0X 1018cm-3、35.0×1018cm-3Or 50.0X 1018cm-3Any one of (a); the emitter 108 has a thickness in a range from 300 nanometers to 500 nanometers, inclusive, such as any of 300.0 nanometers, 400.0 nanometers, or 500.0 nanometers.
The collector 105 is Si-doped AlxGa1-xN, an Al composition in a range of 0.55 to 0.65, inclusive, such as any of 0.550, 0.600, or 0.650; the range of Si doping concentration is 5X 1017cm-3To 5X 1018cm-3Including end points, e.g. 5.0X 1017cm-3、35.0×1017cm-3Or 50.0X 1017cm-3Any one of (a); the emitter 108 has a thickness in a range from 300 nanometers to 500 nanometers, inclusive, such as any of 300.0 nanometers, 400.0 nanometers, or 500.0 nanometers.
The window layer 104 is unintentionally doped AlxGa1-xN, the Al composition ranging from 0.6 to 0.8, inclusive, such as any of 0.60, 0.70, or 0.80; the window layer 104 has a thickness in a range from 100 nanometers to 300 nanometers, inclusive, such as any of 100.0 nanometers, 200.0 nanometers, or 300.0 nanometers.
The superlattice layer 103 is multicycle AlxGa1-xN/AlN, i.e. a structure in which AlGaN layers and AlN layers are alternately laminated for several periods, wherein Al is presentxGa1-xN is unintentionally dopedHetero AlGaN, said AlxGa1-xThe Al composition of N ranges from 0.6 to 0.8, inclusive, such as any of 0.60, 0.70, or 0.80; the multicycle AlxGa1-xThe number of cycles of N/AlN is from 5 to 10, inclusive, such as any one of 5.0, 7.0, or 10.0; the AlGaN layer is the same thickness as the AlN layer in each period, ranging from 5 nm to 10 nm, inclusive, such as any of 5.0 nm, 8.0 nm, or 10.0 nm.
The buffer layer 102 is an AlN layer, and includes a low-temperature AlN nucleation layer, a medium-temperature AlN insertion layer, and a high-temperature AlN epitaxial layer, where the thickness of the low-temperature AlN nucleation layer ranges from 30 nm to 50 nm, inclusive, such as any one of 30.0 nm, 40.0 nm, or 50.0 nm; the high temperature AlN epitaxial layer has a thickness in a range from 500 nanometers to 1000 nanometers, inclusive, such as any of 500.0 nanometers, 780.0 nanometers, or 1000.0 nanometers.
The substrate 101 is a sapphire substrate.
The AlGaN-based solar blind ultraviolet phototransistor detector provided by the invention comprises a buffer layer 102, a superlattice layer 103, a window layer 104, a collector 105, a base 107 and an emitter 108 in sequence from a substrate 101 to the outside, wherein the base 107 is a base 107 consisting of a multi-period p-AlGaN/Mg-layer; the multi-period p-AlGaN/Mg-layer is a structure formed by alternately overlapping a p-AlGaN layer and a Mg-layer for a plurality of periods; the multicycle p-AlGaN/Mg-layer is a hierarchical structure subjected to annealing treatment. The AlGaN-based solar blind ultraviolet phototransistor detector adopts periodic ultrathin Mg uniformly doped p-AlGaN and high-concentration Mg-doped and is assisted with a subsequent high-temperature thermal diffusion annealing method to prepare the base 107 of the AlGaN-based solar blind ultraviolet phototransistor. The method comprises the steps of forming a thin-layer uniform Mg doping and high-concentration Mg-doping alternating structure through a periodic high-concentration Mg-doping technology, limiting a high-concentration Mg dopant in an extremely thin interlayer, diffusing the Mg-thin layer to low-Mg-concentration areas on two sides through high-temperature thermal diffusion, overcoming the defect that the Mg dopant is difficult to be merged into a high-Al component AlGaN material lattice in the conventional uniform doping process, damaging Mg-H bonds in the high-temperature diffusion process, enabling Mg doped atoms to form acceptors, and solving the problem of the AlGaN-based solar blind ultraviolet phototransistor detectorThe base 107P type AlGaN material has the problems of high impedance, low hole concentration and low hole mobility, the base 107 of the AlGaN-based solar blind ultraviolet phototransistor detector is thicker than the prior art, the light absorption capability of a collector junction depletion region formed by the base 107 is stronger, and the high-gain AlGaN-based solar blind ultraviolet phototransistor detector can be obtained. As an example, it was demonstrated that in a p-AlGaN material having an Al composition of 0.45, the hole concentration is 1.5X 10 in the prior art17cm-3Is improved to 1.2 multiplied by 10 of the invention18cm-3。
On the basis of the first specific embodiment, a new light absorption structure is added to obtain a second specific embodiment, a schematic structural diagram of which is shown in fig. 2, the second specific embodiment sequentially comprises a buffer layer 102, a superlattice layer 103, a window layer 104, a collector 105, a base 107 and an emitter 108 from a substrate 101 to the outside, wherein the base 107 is a base 107 composed of a multi-period p-AlGaN/Mg-layer;
the multi-period p-AlGaN/Mg-layer is a structure formed by alternately overlapping a p-AlGaN layer and a Mg-layer for a plurality of periods;
the multi-period p-AlGaN/Mg-layer is of a hierarchical structure subjected to annealing treatment;
the AlGaN-based solar blind ultraviolet phototransistor detector further comprises a low-dimensional light absorption layer 106;
the low dimensional light absorbing layer 106 is disposed between the collector 105 and the base 107.
The difference between the present embodiment and the above embodiments is that the present embodiment further adds a low-dimensional light absorption layer 106 for light absorption, and the other structures are the same as those of the above embodiments, and are not described again here.
The low dimensional light absorbing layer 106, whether p-AlxGa1-xN/p-AlyGa1-yWhether the N quantum well is p-AlxGa1-xN/p-AlyGa1-yN superlattice, Al composition x each ranging from 0.45 to 0.50, inclusive, such as any of 0.450, 0.477, or 0.500; the Al component y ranges from 0.55 to 0.65, inclusive, such as any of 0.550, 0.580, or 0.650.
The low dimensional light absorptionThe cladding layer 106 is p-AlxGa1-xN/p-AlyGa1-yN quantum well, p-Al of potential well layerxGa1-xThe thickness of N is 3 nanometers to 5 nanometers, inclusive, such as any of 3.0 nanometers, 4.0 nanometers, or 5.0 nanometers; barrier layer p-AlyGa1-yThe thickness of N ranges from 8 nanometers to 10 nanometers, inclusive, such as any of 8.0 nanometers, 9.0 nanometers, or 10.0 nanometers.
The low dimensional light absorption layer 106 is p-AlxGa1-xN/p-AlyGa1-yIn the case of N superlattice, p-AlxGa1-xN and p-AlyGa1-yThe thickness of N ranges from 3 nanometers to 5 nanometers, inclusive, such as any of 3.0 nanometers, 4.0 nanometers, or 5.0 nanometers.
In this embodiment, a low dimensional light absorption layer 106 is introduced between the collector electrode 105 and the base electrode 107, and during the operation of the phototransistor, the collector junction formed by the collector electrode 105 and the base electrode 107 is reverse biased, incident light enters from the collector electrode 105 side, the low dimensional light absorption layer 106 captures incident photons first, and the low dimensional light absorption layer 106 generates more electron-hole pairs because the photoelectric conversion efficiency of the low dimensional light absorption layer 106 is higher than that of a conventional collector junction depletion region. Since the low-dimensional light absorption layer 106 is p-type, photo-generated holes are dominant and accumulated in the base 107 under reverse bias, so that the conduction band barrier between the emitter 108 and the base 107 is greatly reduced, more electrons in the emitter 108 transit the base 107 under external bias, and the photocurrent gain is further enhanced, therefore, the introduction of the low-dimensional light absorption layer 106 improves the photoelectric conversion efficiency of the collector junction depletion region of the conventional phototransistor, and the detection sensitivity of the AlGaN solar blind ultraviolet phototransistor is improved.
The invention also provides a manufacturing method of the AlGaN-based solar blind ultraviolet phototransistor detector, which is called as a third specific implementation mode, and the flow schematic diagram of the AlGaN-based solar blind ultraviolet phototransistor detector is shown in FIG. 3, and the manufacturing method comprises the following steps:
step S101: a substrate 101 is provided.
Step S102: a buffer layer 102, a superlattice layer 103, a window layer 104, and a collector electrode 105 are sequentially provided on the substrate 101.
The above substrate 101 is subjected to double-side polishing treatment in advance.
The buffer layer 102 is an AlN layer, and includes a low-temperature AlN nucleation layer, a medium-temperature AlN insertion layer, and a high-temperature AlN epitaxial layer, where the growth temperature of the low-temperature AlN nucleation layer is 950 degrees celsius, the growth temperature of the medium-temperature AlN insertion layer is 1050 degrees celsius, and the growth temperature of the high-temperature AlN epitaxial layer is 1250 degrees celsius.
Step S103: the surface of the collector 105 is provided with a plurality of overlapped P-AlGaN layers and Mg-layers, the number of the P-AlGaN layers is the same as that of the Mg-layers, and the plurality of overlapped P-AlGaN layers and the Mg-layers are called multi-period P-AlGaN/Mg-pretreatment layers.
Step S104: and annealing the multi-period P-AlGaN/Mg-pretreatment layer to obtain the multi-period P-AlGaN/Mg-layer.
During the annealing, the outside may be a nitrogen atmosphere or a vacuum, and the annealing temperature ranges from 700 degrees celsius to 850 degrees celsius, inclusive, such as 700.0 degrees celsius, 788.0 degrees celsius, or 850.0 degrees celsius.
The annealing time is 30 minutes, and can be adjusted according to actual requirements.
Step S105: and arranging an emitter 108 on the surface of the multi-period p-AlGaN/Mg-layer to obtain the AlGaN-based solar blind ultraviolet phototransistor detector.
The manufacturing method of the AlGaN-based solar blind ultraviolet phototransistor detector provided by the invention comprises the steps of providing a substrate 101; a buffer layer 102, a superlattice layer 103, a window layer 104 and a collector 105 are sequentially arranged on the substrate 101; arranging a plurality of overlapped P-AlGaN layers and Mg-layers on the surface of the collector 105, wherein the number of the P-AlGaN layers is the same as that of the Mg-layers, and the plurality of overlapped P-AlGaN layers and Mg-layers are called multi-period P-AlGaN/Mg-pretreatment layers; annealing the multi-period P-AlGaN/Mg-pretreatment layer to obtain a multi-period P-AlGaN/Mg-layer; and arranging an emitter 108 on the surface of the multi-period p-AlGaN/Mg-layer to obtain the AlGaN-based solar blind ultraviolet phototransistor detector. The AlGaN-based solar blind ultraviolet phototransistor detector obtained by the method adopts periodic ultrathin Mg uniformly doped p-AlGaN and high-concentration Mg-doped and is assisted with a subsequent high-temperature thermal diffusion annealing method to prepare the base 107 of the AlGaN-based solar blind ultraviolet phototransistor. By periodic high-concentration Mg-doping technology, a thin-layer uniform Mg doping and high-concentration Mg-doping alternating structure is formed, high-concentration Mg dopant is limited in an extremely thin interlayer, through high-temperature thermal diffusion, the Mg-thin layer diffuses to the low Mg concentration areas at two sides, the defect that Mg dopant is difficult to be incorporated into AlGaN material crystal lattices with high Al component in the conventional uniform doping process is overcome, meanwhile, in the high-temperature diffusion process, Mg-H bonds are destroyed, Mg doped atoms form an acceptor, the problems of high impedance, low hole concentration and low hole mobility of a base 107P-type AlGaN material of the AlGaN-based solar blind ultraviolet phototransistor detector are solved, the base 107 of the obtained AlGaN-based solar blind ultraviolet phototransistor detector is thicker than that of the prior art, the light absorption capability of the formed collector junction depletion region is stronger, and the high-gain AlGaN-based solar blind ultraviolet phototransistor detector can be obtained.
On the basis of the foregoing specific embodiment, a light absorption structure of the AlGaN-based solar blind ultraviolet phototransistor detector is further improved to obtain a fourth specific embodiment, a schematic flow chart of which is shown in fig. 4, and the fourth specific embodiment includes:
step S201: a substrate 101 is provided.
Step S202: a buffer layer 102, a superlattice layer 103, a window layer 104, and a collector electrode 105 are sequentially provided on the substrate 101.
Step S203: a low-dimensional light absorption layer 106 is provided on the surface of the collector 105.
Step S204: and arranging a plurality of overlapped P-AlGaN layers and Mg-layers on the surface of the low-dimensional light absorption layer 106, wherein the number of the P-AlGaN layers is the same as that of the Mg-layers, and the plurality of overlapped P-AlGaN layers and Mg-layers are called multi-period P-AlGaN/Mg-pretreatment layers.
Step S205: and annealing the multi-period P-AlGaN/Mg-pretreatment layer to obtain the multi-period P-AlGaN/Mg-layer.
Step S206: and arranging an emitter 108 on the surface of the multi-period p-AlGaN/Mg-layer to obtain the AlGaN-based solar blind ultraviolet phototransistor detector.
The difference between the present embodiment and the foregoing embodiment is that a step of providing the low-dimensional light absorption layer 106 is further added in the present embodiment, and other steps are the same as those in the foregoing embodiment and are not described again here.
In this embodiment, after the low-dimensional light absorbing layer 106 is added, since the incident light is incident from the collector 105 side, the low-dimensional light absorbing layer 106 captures incident photons before the collector depletion region, and since the photoelectric conversion efficiency of the low-dimensional light absorbing layer 106 is higher than that of a conventional collector depletion region, the low-dimensional light absorbing layer 106 generates more electron-hole pairs, and since the low-dimensional light absorbing layer 106 is p-type, photo-generated holes dominate and are accumulated in the base 107 under reverse bias, the conduction band barrier between the emitter 108 and the base 107 is greatly reduced, so that more electrons in the emitter 108 transit across the base 107 under external bias, the photocurrent gain is further enhanced, and the detection sensitivity of the AlGaN blind solar ultraviolet phototransistor is improved.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The AlGaN-based solar blind ultraviolet phototransistor detector and the manufacturing method thereof provided by the present invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.

Claims (10)

1. An AlGaN-based solar blind ultraviolet phototransistor detector comprises a buffer layer, a superlattice layer, a window layer, a collector, a base and an emitter from a substrate to the outside in sequence, and is characterized in that the base is a base consisting of a multi-period p-AlGaN/Mg-layer;
the multi-period p-AlGaN/Mg-layer is a structure formed by alternately overlapping a p-AlGaN layer and a Mg-layer for a plurality of periods; wherein the Mg-layer is a high-concentration Mg-doped p-type AlGaN layer obtained by doping;
the multicycle p-AlGaN/Mg-layer is a hierarchical structure subjected to annealing treatment.
2. The AlGaN-based solar blind ultraviolet phototransistor detector according to claim 1, wherein a thickness of the p-AlGaN layer in the multi-period p-AlGaN/Mg-layer ranges from 12 nm to 15 nm, inclusive, and an Al component concentration of the p-AlGaN layer ranges from 0.45 to 0.55, inclusive;
the thickness of the Mg-layer in the multi-period p-AlGaN/Mg-layer ranges from 3 nanometers to 5 nanometers, inclusive.
3. The AlGaN-based solar blind ultraviolet phototransistor detector according to claim 2, wherein the number of periods of the multi-period p-AlGaN/Mg-layer ranges from 3 periods to 5 periods, inclusive.
4. The AlGaN-based solar blind ultraviolet phototransistor detector according to claim 1, further comprising a low dimensional light absorption layer;
the low dimensional light absorption layer is disposed between the collector and the base.
5. The AlGaN-based solar-blind ultraviolet phototransistor detector as set forth in claim 4, wherein the low dimensional light absorbing layer is p-AlxGa1-xN/p-AlyGa1-yN quantum well or p-AlxGa1-xN/p-AlyGa1-yAn N superlattice.
6. The AlGaN-based solar-blind ultraviolet phototransistor detector as set forth in claim 5, wherein when the low dimensional light absorbing layer is p-AlxGa1-xN/p-AlyGa1-yN quantum well, p-Al of potential well layerxGa1-xThe thickness of N is in the range of 3 nm to 5 nm, inclusive, the barrier layer p-AlyGa1-yThe thickness of N is 8 nanometers to 10 nanometers, inclusive;
when the low dimensional light absorption layer is p-AlxGa1-xN/p-AlyGa1-yIn the case of N superlattice, p-AlxGa1-xN layer and p-AlyGa1-yThe thickness of the N layer ranges from 3 nm to 5 nm, inclusive.
7. A manufacturing method of an AlGaN-based solar blind ultraviolet phototransistor detector is characterized by comprising the following steps:
providing a substrate;
sequentially arranging a buffer layer, a superlattice layer, a window layer and a collector on the substrate;
arranging a plurality of overlapped P-AlGaN layers and Mg-layers on the surface of the collector, wherein the number of the P-AlGaN layers is the same as that of the Mg-layers, and the plurality of overlapped P-AlGaN layers and Mg-layers are called multi-period P-AlGaN/Mg-pretreatment layers; wherein the Mg-layer is a high-concentration Mg-doped p-type AlGaN layer obtained by doping;
annealing the multi-period P-AlGaN/Mg-pretreatment layer to obtain a multi-period P-AlGaN/Mg-layer;
and arranging an emitter on the surface of the multi-period p-AlGaN/Mg-layer to obtain the AlGaN-based solar blind ultraviolet phototransistor detector.
8. The method of fabricating an AlGaN-based solar blind ultraviolet phototransistor detector according to claim 7, wherein the annealing of the multi-period p-AlGaN/Mg-pretreatment layer is performed at a temperature ranging from 700 degrees celsius to 850 degrees celsius, inclusive.
9. The method of fabricating an AlGaN-based solar blind ultraviolet phototransistor detector according to claim 7, further comprising, after sequentially disposing a buffer layer, a superlattice layer, a window layer, and a collector electrode on the substrate:
arranging a low-dimensional light absorption layer on the surface of the collector;
the step of arranging the multi-period p-AlGaN/Mg-pretreatment layer on the surface of the collector comprises the following steps:
and arranging a multi-period p-AlGaN/Mg-pretreatment layer on the surface of the low-dimensional light absorption layer.
10. The method of claim 9, wherein the low dimensional light absorbing layer is p-Al, and the AlGaN-based solar blind uv phototransistor detector is fabricated by a method such as photolithographyxGa1-xN/p-AlyGa1-yN quantum well or p-AlxGa1-xN/p-AlyGa1-yAn N superlattice;
the method for arranging the low-dimensional light absorption layer on the surface of the collector comprises the following steps:
periodic regulation at constant temperature IIIGa/ⅢAlThe molar flow ratio is controlled, and the growth time is controlled so as to adjust the p-Al in each periodxGa1-xN layer and p-AlyGa1-yThe purpose of the thickness of the N layer.
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