CN1039956C - 铟镓砷光电探测器 - Google Patents
铟镓砷光电探测器 Download PDFInfo
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- CN1039956C CN1039956C CN93112365A CN93112365A CN1039956C CN 1039956 C CN1039956 C CN 1039956C CN 93112365 A CN93112365 A CN 93112365A CN 93112365 A CN93112365 A CN 93112365A CN 1039956 C CN1039956 C CN 1039956C
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Abstract
铟镓砷光电探测器，属于微电子学光电子技术领域。本发明是由衬底、缓冲层、吸收层、InP增强层、薄P型InP增强层、金属电极组成。本发明可获得比仅用InP势垒增强层更为高的势垒高度，仍然保持其晶格匹配，高速、低暗电流，工艺简单的优点，是一种广泛应用于光纤通讯领域中的更为理想的光电探测器。
Description
本发明涉及一种在n型铟镓砷吸收层上具有双重势垒增强层，以便获得低暗电流的光电探测器，属于微电子学光电子技术领域。
设计良好的金属—半导体—金属(MSM)平面结构的铟镓砷光电探测器中，其关键技术之一就是设计一个有效的肖特基势垒增强层。在已申请的CN92108310.6中，还有待进一步提高肖特基势垒之有效高度。
本发明的目的在于克服现有技术中的不足之处而提供一种具有双重势垒的铟镓砷光电探测器。
本发明的任务是通过下列措施来完成的：一种由衬底、缓冲层、吸收层、双重势垒增强层和金属电极组成的铟镓砷光电探测器，双重势垒增强层就是在非掺杂磷化铟增强层上再生长一层薄P型掺杂磷化铟增强层，对n型铟镓砷具有双重势垒增强的功能。
附图1为铟镓砷光电探测器的平面结构示意图。
本发明以下将结合附图对实施例进行详述：一种由半绝缘InP(磷化铟)单晶衬底1、非掺杂的InP缓冲层2、n型In0.53Ca0.47As本征光吸收层3、非掺杂磷化铟(InP)增强层4、薄P型掺杂磷化铟(InP)增强层6、肖特基势垒金属(Al或Ti/Au)制成的交叉指状电极5组成，如附图1所示。为了提高肖特基势垒高度，本发明在于在非掺杂磷化铟(InP)形成的势垒增强层4的表面上，再引入一层薄P型掺杂磷化铟(InP)增强层6，这样非掺杂磷化铟(InP)增强层4、薄P型掺杂磷化铟(InP)增强层6构成本发明的双重势垒增强层，这一薄P型掺杂磷化铟(InP)增强层6的厚度t和掺杂浓度Wp，应满足Δφ＝qWpt2/2εs，其中q为电子电荷，εs为InP的介电常数，Δφ是相对InP的肖特基势垒高度的增量，该式条件为Wp＞＞W，W为非掺杂磷化铟(InP)增强层4中的残余n型杂质浓度，通常InP的增强层总厚度以80～100nm为宜。这样的结构可以获得更低的暗电流，并能减小放大器的噪音，进而制造低噪音的单片放大器。
本发明与现有技术相比可获得比仅用InP势垒增强层更为高的势垒高度，仍然保持其晶格匹配，高速、低暗电流，工艺简单的优点，是一种更为理想的光纤通讯等领域中的重要电子器件。
Claims (1)
1、一种铟镓砷光电探测器，它由衬底(1)、缓冲层(2)、吸收层(3)、非掺杂磷化铟(InP)增强层(4)、金属电极(5)组成，其特征在于在非掺杂磷化铟(InP)增强层(4)上再生长一层薄P型掺杂磷化铟(InP)增强层(6)。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN93112365A CN1039956C (zh) | 1993-03-13 | 1993-03-13 | 铟镓砷光电探测器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN93112365A CN1039956C (zh) | 1993-03-13 | 1993-03-13 | 铟镓砷光电探测器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1083991A CN1083991A (zh) | 1994-03-16 |
| CN1039956C true CN1039956C (zh) | 1998-09-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN93112365A Expired - Fee Related CN1039956C (zh) | 1993-03-13 | 1993-03-13 | 铟镓砷光电探测器 |
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| Country | Link |
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| CN (1) | CN1039956C (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330005C (zh) * | 2005-01-07 | 2007-08-01 | 中国科学院上海微系统与信息技术研究所 | 采用砷化镓基含磷材料的紫外增强光电探测器及制作方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0405801A2 (en) * | 1989-06-26 | 1991-01-02 | AT&T Corp. | Optical amplifier-photodetector assemblage |
| US5051804A (en) * | 1989-12-01 | 1991-09-24 | The United States Of America As Represented By The United States Department Of Energy | Photodetector having high speed and sensitivity |
-
1993
- 1993-03-13 CN CN93112365A patent/CN1039956C/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0405801A2 (en) * | 1989-06-26 | 1991-01-02 | AT&T Corp. | Optical amplifier-photodetector assemblage |
| US5051804A (en) * | 1989-12-01 | 1991-09-24 | The United States Of America As Represented By The United States Department Of Energy | Photodetector having high speed and sensitivity |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330005C (zh) * | 2005-01-07 | 2007-08-01 | 中国科学院上海微系统与信息技术研究所 | 采用砷化镓基含磷材料的紫外增强光电探测器及制作方法 |
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| Publication number | Publication date |
|---|---|
| CN1083991A (zh) | 1994-03-16 |
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