CN103986061A - Laser device and method for adjusting and controlling passively Q-switched laser output characteristics through Cr<4>+: YAG crystal anisotropy characteristics - Google Patents

Laser device and method for adjusting and controlling passively Q-switched laser output characteristics through Cr<4>+: YAG crystal anisotropy characteristics Download PDF

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CN103986061A
CN103986061A CN201410225332.XA CN201410225332A CN103986061A CN 103986061 A CN103986061 A CN 103986061A CN 201410225332 A CN201410225332 A CN 201410225332A CN 103986061 A CN103986061 A CN 103986061A
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laser
crystal
yag
laser output
switched
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于欣
马欲飞
李旭东
闫仁鹏
樊荣伟
彭江波
陈德应
杨超博
白云昌
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Harbin Institute of Technology Shenzhen
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Abstract

一种利用Cr4+:YAG晶体各向异性特性调控被动调Q激光输出特性的激光器装置及方法,所述装置包括沿光束传播方向依次设置的半导体激光泵浦源(1)、第一非球面透镜(2)、第二非球面透镜(3)、激光前腔镜(4)、激光晶体(5)、具有旋转调节功能的调整架(7)、Cr4+:YAG晶体(8)、激光输出镜(9),所述方法由以下步骤实现:步骤一、构建Cr4+:YAG晶体被动调Q激光输出;步骤二、通过旋转调节调整架,进而实现激光谐振腔内Cr4+:YAG晶体能量透过率的各向异性改变,最终实现被动调Q激光输出性能的调控。本发明通过利用Cr4+:YAG晶体各向异性的能量透过率来实现被动调Q激光输出性能的控制,是一种简单易行的办法。

A laser device and method for regulating passive Q-switched laser output characteristics by utilizing the anisotropic properties of Cr 4+ : YAG crystals, the device includes a semiconductor laser pump source (1) arranged in sequence along the beam propagation direction, a first aspheric surface Lens (2), second aspherical lens (3), laser front cavity mirror (4), laser crystal (5), adjustment frame with rotation adjustment function (7), Cr 4+ :YAG crystal (8), laser output mirror (9), the method is realized by the following steps: Step 1, build Cr 4+ :YAG crystal passive Q-switched laser output; The anisotropic change of the energy transmittance of the crystal finally realizes the control of the passive Q-switched laser output performance. The invention realizes the control of passive Q-switching laser output performance by using the anisotropic energy transmittance of Cr 4+ :YAG crystal, which is a simple and feasible method.

Description

利用Cr4+:YAG晶体各向异性特性调控被动调Q激光输出特性的激光器装置及方法Laser device and method for adjusting passive Q-switched laser output characteristics by using Cr4+:YAG crystal anisotropy

技术领域technical field

本发明属于激光技术领域,涉及一种基于Cr4+:YAG晶体各向异性特性调控被动调Q激光输出特性的激光器装置及方法。The invention belongs to the technical field of lasers, and relates to a laser device and a method for adjusting and controlling the output characteristics of passive Q-switched lasers based on the anisotropic characteristics of Cr 4+ :YAG crystals.

背景技术Background technique

调Q技术是获得高重频、高峰值功率、窄脉宽激光的最佳办法,在激光技术发展的过程中,多种调Q技术已经被发明且成功运用于激光系统中,然而许多技术都有其自身的优缺点及适用条件。由于被动调Q技术不需要电光调Q或声光调Q过程中所需的高压电脉冲或射频调制,因此结构简单,对外界的电磁干扰不敏感,且谐振腔腔长可以压缩到很短,有利于高重频、高峰值功率、窄脉宽激光的产生,非常适用于对电磁干扰免疫及体积要求高的场合应用,比如激光点火。由于Cr4+:YAG晶体具有良好的热-机械特性,在0.8-1.2μm范围内具有较大的吸收截面,且价格低廉,因此被广泛应用于产生被动调Q纳秒脉冲及皮秒脉冲的激光器当中,Cr4+:YAG晶体是目前应用最为广泛的被动调Q元件。通常为了改变Cr4+:YAG晶体被动调Q激光输出特性,比如改变输出脉冲能量、脉冲重复频率、脉冲宽度等特性,一般都会采取更换Cr4+:YAG晶体即调整Cr4+:YAG晶体初始透过率的方法,但更换Cr4+:YAG晶体即腔内重新插入光学元件,这将会使得谐振腔容易产生失调,需要重新调节谐振腔使其达到最佳状态,过程繁琐,且同时还需要购买不同初始透过率的Cr4+:YAG晶体,成本增加。Q-switching technology is the best way to obtain high repetition frequency, high peak power, and narrow pulse width laser. During the development of laser technology, a variety of Q-switching technologies have been invented and successfully applied to laser systems. However, many technologies are Has its own advantages and disadvantages and applicable conditions. Since passive Q-switching technology does not require high-voltage electric pulses or radio-frequency modulation required in the process of electro-optic Q-switching or acousto-optic Q-switching, the structure is simple, it is not sensitive to external electromagnetic interference, and the length of the resonant cavity can be compressed to a very short , which is conducive to the generation of high repetition frequency, high peak power, and narrow pulse width lasers, and is very suitable for applications where immunity to electromagnetic interference and high volume requirements are high, such as laser ignition. Because Cr 4+ :YAG crystal has good thermal-mechanical properties, has a large absorption cross section in the range of 0.8-1.2μm, and is cheap, it is widely used in generating passive Q-switched nanosecond pulses and picosecond pulses. Among lasers, Cr 4+ :YAG crystal is currently the most widely used passive Q-switching element. Usually, in order to change the passive Q-switched laser output characteristics of Cr 4+ :YAG crystal, such as changing the output pulse energy, pulse repetition frequency, pulse width and other characteristics, it is generally necessary to replace the Cr 4+ :YAG crystal, that is, to adjust the initial state of the Cr 4+ :YAG crystal. Transmittance method, but replace the Cr 4+ :YAG crystal, that is, reinsert the optical element in the cavity, which will make the resonant cavity prone to misalignment, and it is necessary to readjust the resonant cavity to achieve the best state, the process is cumbersome, and at the same time It is necessary to purchase Cr 4+ :YAG crystals with different initial transmittances, and the cost increases.

发明内容Contents of the invention

为了解决常规更换Cr4+:YAG晶体来达到改变初始透过率进而实现调控被动调Q激光输出特性的方法所存在的过程繁琐、成本增加等缺陷及其他不足,本发明提供了一种基于Cr4+:YAG晶体各向异性特性来调控被动调Q激光多种输出特性的激光器装置及方法。In order to solve the conventional replacement of Cr 4+ : YAG crystal to achieve the change of the initial transmittance and then realize the method of adjusting and controlling the passive Q-switched laser output characteristics, the defects such as cumbersome process, cost increase and other deficiencies, the invention provides a Cr 4+ : A laser device and method for regulating multiple output characteristics of a passively Q-switched laser by anisotropic properties of YAG crystal.

本发明的目的是通过以下技术方案实现的:The purpose of the present invention is achieved through the following technical solutions:

一种利用Cr4+:YAG晶体各向异性特性来调控被动调Q激光输出特性的激光器装置,该装置包括沿光束传播方向依次设置的半导体激光泵浦源、第一非球面透镜、第二非球面透镜、激光前腔镜、激光晶体、具有旋转调节功能的调整架、Cr4+:YAG晶体、激光输出镜,激光前腔镜和激光输出镜构成激光振荡器的谐振腔,半导体激光泵浦源发射出的激光经第一非球面透镜和第二非球面透镜准直聚焦后入射到激光晶体中,激光晶体吸收泵浦能量,在激光前腔镜和激光输出镜之间产生振荡激光,该激光经由Cr4+:YAG晶体后将被调制成脉冲形式,经激光输出镜后输出到谐振腔外。A laser device that uses the anisotropic properties of Cr 4+ : YAG crystals to regulate the output characteristics of passive Q-switched lasers. The device includes a semiconductor laser pump source, a first aspheric lens, a second aspheric Spherical lens, laser front cavity mirror, laser crystal, adjustment frame with rotation adjustment function, Cr 4+ :YAG crystal, laser output mirror, laser front cavity mirror and laser output mirror constitute the resonant cavity of the laser oscillator, semiconductor laser pump The laser light emitted by the source is collimated and focused by the first aspheric lens and the second aspheric lens, and then enters the laser crystal. The laser crystal absorbs the pump energy and generates oscillating laser light between the laser front cavity mirror and the laser output mirror. The laser will be modulated into a pulse form after passing through the Cr 4+ :YAG crystal, and output to the outside of the resonant cavity after passing through the laser output mirror.

本发明利用Cr4+:YAG晶体各向异性特性来调控被动调Q激光多种输出特性,在激光谐振腔内插入放置在具有旋转调节功能调整架内的Cr4+:YAG晶体以及偏振片(对线性偏振的振荡激光可以不用加入此元件,对于非线性偏振的振荡激光则需要加入偏振片)。The present invention utilizes the anisotropic properties of Cr 4+ :YAG crystals to regulate multiple output characteristics of passive Q-switched lasers, and inserts Cr 4+ :YAG crystals and polarizers ( For linearly polarized oscillating lasers, it is not necessary to add this component, but for non-linearly polarized oscillating lasers, polarizers need to be added).

利用上述方法实现调控被动调Q激光多种输出性能(输出脉冲能量、脉冲重复频率、脉冲宽度等),由以下步骤实现:Using the above method to realize regulation and control of multiple output performances of passive Q-switched lasers (output pulse energy, pulse repetition frequency, pulse width, etc.), is achieved by the following steps:

步骤一、构建Cr4+:YAG晶体被动调Q激光输出;Step 1, construct Cr 4+ : YAG crystal passively Q-switched laser output;

步骤二、通过旋转调节调整架,改变Cr4+:YAG晶体晶向与振荡激光偏振方向之间的夹角,进而实现激光谐振腔内Cr4+:YAG晶体能量透过率的各向异性改变,最终实现被动调Q激光输出性能的调控。Step 2. Change the angle between the crystal orientation of the Cr 4+ :YAG crystal and the polarization direction of the oscillating laser by rotating and adjusting the adjustment frame, so as to realize the anisotropic change of the energy transmittance of the Cr 4+ :YAG crystal in the laser cavity , finally realizing the control of passive Q-switched laser output performance.

本发明利用Cr4+:YAG晶体对线性偏振的振荡激光呈现出各向异性的透过率,即呈现出各向异性的调制深度,利用此特点便可非常容易地对被动调Q激光输出脉冲能量、脉冲重复频率、脉冲宽度等特性进行调节。需要说明的是,不同晶向的切割会导致Cr4+:YAG晶体能量透过率各向异性特性的不同,最终会引起被动调Q激光输出特性调控效果存在差异,当使用[100]方向切割的Cr4+:YAG晶体时,脉冲能量最大改变量可达50%、脉冲重复频率最大改变量可达30%、脉冲宽度最大该变量可达150%。本发明通过利用Cr4+:YAG晶体各向异性的能量透过率来实现被动调Q激光输出性能的控制,是一种简单易行的办法。The present invention utilizes Cr 4+ : YAG crystal to present anisotropic transmittance to linearly polarized oscillating laser, that is, presents anisotropic modulation depth. Utilizing this feature, it is very easy to output pulses to passive Q-switched laser Energy, pulse repetition frequency, pulse width and other characteristics can be adjusted. It should be noted that cutting with different crystal orientations will lead to differences in the anisotropic properties of the energy transmittance of Cr 4+ :YAG crystals, which will eventually lead to differences in the regulation effect of passive Q-switched laser output characteristics. When cutting in the [100] direction For Cr 4+ :YAG crystal, the maximum change of pulse energy can reach 50%, the maximum change of pulse repetition frequency can reach 30%, and the maximum pulse width can reach 150%. The invention realizes the control of passive Q-switching laser output performance by using the anisotropic energy transmittance of Cr 4+ :YAG crystal, which is a simple and feasible method.

附图说明Description of drawings

图1为本发明的输出性能可调控的Cr4+:YAG晶体被动调Q激光器结构示意图;Fig. 1 is the Cr 4+ that the output performance of the present invention can be regulated: YAG crystal passive Q-switched laser structure schematic diagram;

图2为图1的局部放大图;Figure 2 is a partially enlarged view of Figure 1;

图3为利用本方法调控Cr4+:YAG晶体被动调Q Nd:GdVO4激光器输出脉冲宽度的测试结果;Fig. 3 utilizes this method to regulate and control Cr 4+ : YAG crystal passively Q-switched Nd:GdVO 4 laser output pulse width test result;

图4为利用本方法调控Cr4+:YAG晶体被动调Q Nd:GdVO4激光器输出脉冲重复频率的测试结果;Fig. 4 utilizes this method to control Cr 4+ : YAG crystal passively Q-switched Nd:GdVO 4 laser output pulse repetition frequency test result;

图5为利用本方法调控Cr4+:YAG晶体被动调Q Nd:GdVO4激光器输出脉冲能量的测试结果。Fig. 5 shows the test results of passive Q-switching Nd:GdVO 4 laser output pulse energy controlled by this method.

具体实施方式Detailed ways

下面结合附图对本发明的技术方案作进一步的说明,但并不局限于此,凡是对本发明技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和范围,均应涵盖在本发明的保护范围中。The technical solution of the present invention will be further described below in conjunction with the accompanying drawings, but it is not limited thereto. Any modification or equivalent replacement of the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention should be covered by the present invention. within the scope of protection.

具体实施方式一:如图1和图2所示,本实施方式提供了一种利用Cr4+:YAG晶体各向异性特性来调控被动调Q激光输出特性的激光器装置,该装置包括沿光束传播方向依次设置的半导体激光泵浦源1、第一非球面透镜2、第二非球面透镜3、激光前腔镜4、激光晶体5、偏振片6(如果激光晶体产生线偏振激光的话,此元件可不添加)、具有旋转调节功能的调整架7、Cr4+:YAG晶体8、激光输出镜9,激光前腔镜4和激光输出镜9构成激光振荡器的谐振腔。Specific embodiment one: as shown in Figure 1 and Figure 2, this embodiment provides a kind of laser device that utilizes the anisotropy characteristic of Cr 4+ :YAG crystal to regulate and control the output characteristic of passive Q-switched laser, the device includes The semiconductor laser pump source 1, the first aspheric lens 2, the second aspheric lens 3, the laser front cavity mirror 4, the laser crystal 5, and the polarizer 6 (if the laser crystal produces linearly polarized laser light, this component Can not be added), adjustment frame 7 with rotation adjustment function, Cr 4+ :YAG crystal 8, laser output mirror 9, laser front cavity mirror 4 and laser output mirror 9 constitute the resonant cavity of the laser oscillator.

本实施方式中,半导体激光泵浦源1发射出的激光经第一非球面透镜2和第二非球面透镜3准直聚焦后入射到激光晶体5中,激光晶体5吸收泵浦能量,在激光前腔镜4和激光输出镜9之间产生振荡激光,如果产生的振荡激光是非线性偏振的话,那么经过偏振片6后将被改变成线性偏振激光,该线性偏振激光经由Cr4+:YAG晶体8后将被调制成脉冲形式,经激光输出镜9后输出到腔外。In this embodiment, the laser light emitted by the semiconductor laser pump source 1 is collimated and focused by the first aspheric lens 2 and the second aspheric lens 3, and then enters the laser crystal 5. The laser crystal 5 absorbs the pump energy, and the laser An oscillating laser is generated between the front cavity mirror 4 and the laser output mirror 9. If the generated oscillating laser is non-linearly polarized, it will be changed into a linearly polarized laser after passing through the polarizer 6. The linearly polarized laser passes through the Cr 4+ : YAG crystal 8, it will be modulated into a pulse form, and output to the outside of the cavity after passing through the laser output mirror 9.

本实施方式中,第一非球面透镜2、第二非球面透镜3、激光前腔镜4、激光晶体5、偏振片6、具有旋转调节功能的调整架7、Cr4+:YAG晶体8、激光输出镜9均为共轴形式存在。In the present embodiment, the first aspherical lens 2, the second aspheric lens 3, the laser front cavity mirror 4, the laser crystal 5, the polarizer 6, the adjustment frame 7 with the rotation adjustment function, Cr 4+ : YAG crystal 8, The laser output mirrors 9 all exist in a coaxial form.

本实施方式中,具有旋转调节功能的调整架7的旋转维度为360度,且应该标有刻度,刻度分辨率优于1度。In this embodiment, the rotation dimension of the adjustment frame 7 with the rotation adjustment function is 360 degrees, and should be marked with a scale, and the resolution of the scale is better than 1 degree.

本实施方式中,Cr4+:YAG晶体8可以是沿任何晶向切割的,不同晶向的切割会导致Cr4+:YAG晶体各向异性特性的不同,最终会引起被动调Q激光输出特性调控效果的差异,不论沿何种晶向切割,其初始透过率均不能过小,须大于15%。In this embodiment, the Cr 4+ :YAG crystal 8 can be cut along any crystal direction, and cutting in different crystal directions will lead to different anisotropy characteristics of the Cr 4+ :YAG crystal, which will eventually lead to passive Q-switched laser output characteristics For the difference in control effect, no matter which crystal direction is cut, the initial transmittance should not be too small, and must be greater than 15%.

本实施方式中,第一非球面透镜2和第二非球面透镜3的焦距之比为1.0~1.5,且第二非球面透镜3的焦点必须在激光晶体5内。In this embodiment, the ratio of the focal lengths of the first aspheric lens 2 and the second aspheric lens 3 is 1.0-1.5, and the focal point of the second aspheric lens 3 must be within the laser crystal 5 .

本实施方式中,激光前腔镜4和激光输出镜9构成激光振荡器的谐振腔,其长度小于20cm,且必须满足激光振荡产生条件。In this embodiment, the laser front cavity mirror 4 and the laser output mirror 9 constitute the resonant cavity of the laser oscillator, the length of which is less than 20 cm, and must meet the conditions for generating laser oscillation.

本实施方式中,偏振片6的放置角度与光轴方向成56.5度,且偏振片的消光比须大于200。In this embodiment, the placement angle of the polarizer 6 is 56.5 degrees to the direction of the optical axis, and the extinction ratio of the polarizer must be greater than 200.

具体实施方式二:本实施方式利用具体实施方式一所述装置实现Cr4+:YAG晶体被动调Q激光器输出性能的调控,由以下步骤实现:Specific embodiment two: this embodiment utilizes the device described in specific embodiment one to realize the regulation and control of the output performance of the Cr 4+ :YAG crystal passively Q-switched laser, which is realized by the following steps:

步骤一、构建Cr4+:YAG晶体被动调Q激光输出;Step 1, construct Cr 4+ : YAG crystal passively Q-switched laser output;

步骤二、旋转调整架7,改变Cr4+:YAG晶体晶向[xxx]与振荡激光偏振方向10之间的夹角β值11,即可灵活的调控被动调Q激光输出特性,如改变输出脉冲能量、脉冲重复频率、脉冲宽度等。Step 2. Rotate the adjustment frame 7 to change the angle β between the crystal orientation [xxx] of the Cr 4+ :YAG crystal and the polarization direction of the oscillating laser to 11, so that the output characteristics of the passive Q-switched laser can be flexibly adjusted, such as changing the output Pulse energy, pulse repetition frequency, pulse width, etc.

在图3-图5中的实施过程中,Cr4+:YAG晶体8初始透过率为90%,切割晶向沿[100]方向,图2中的[xxx]、[yyy]、[zzz]晶向分别为[001]、[010]、[100]。激光前腔镜4和激光输出镜9构成的谐振腔长度为16cm,第一非球面透镜2和第二非球面透镜3的焦距之比为1.25,调整架7的旋转维度为360度,刻度分辨率为0.5度。通过旋转调整架,实现Cr4+:YAG晶体能量透过率的各向异性改变,脉冲宽度最大该变量可达150%、脉冲重复频率最大改变量可达30%、脉冲能量最大改变量可达50%。In the implementation process in Fig. 3-Fig. 5, the initial transmittance of Cr 4+ : YAG crystal 8 is 90%, the cutting crystal direction is along the [100] direction, [xxx], [yyy], [zzz in Fig. 2 ] crystal directions are [001], [010], [100], respectively. The length of the resonant cavity formed by the laser front cavity mirror 4 and the laser output mirror 9 is 16cm, the focal length ratio of the first aspheric lens 2 and the second aspheric lens 3 is 1.25, the rotation dimension of the adjustment frame 7 is 360 degrees, and the scale resolution The rate is 0.5 degrees. By rotating the adjustment frame, the anisotropic change of the energy transmittance of Cr 4+ :YAG crystal can be realized. The maximum pulse width can reach 150%, the maximum pulse repetition frequency can reach 30%, and the maximum pulse energy can reach 50%.

Claims (8)

1. one kind is utilized Cr 4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, it is characterized in that described device comprises semiconductor laser pumping source (1), the first non-spherical lens (2), the second non-spherical lens (3), laser front cavity mirror (4), the laser crystal (5) setting gradually along direction of beam propagation, adjustment rack (7), the Cr with rotation regulatory function 4+: YAG crystal (8), laser output mirror (9), laser front cavity mirror (4) and laser output mirror (9) form the resonant cavity of laser oscillator, the laser that launch in semiconductor laser pumping source (1) incides in laser crystal (5) after the first non-spherical lens (2) and the second non-spherical lens (3) collimation focusing, laser crystal (5) absorptive pumping energy, between laser front cavity mirror (4) and laser output mirror (9), produce oscillating laser, this laser is via Cr 4+: YAG crystal will be modulated into impulse form after (8), after laser output mirror (9), output to outside resonant cavity.
2. the Cr that utilizes according to claim 1 4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, and the rotation dimension described in it is characterized in that with the adjustment rack (7) of rotation regulatory function is 360 degree, and indicates scale, and scale resolution can not be less than 1 degree.
3. the Cr that utilizes according to claim 1 4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, it is characterized in that described Cr 4+: YAG crystal (8) cuts along any crystal orientation, and its initial transmission is greater than 15%.
4. the Cr that utilizes according to claim 1 4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, the ratio that it is characterized in that the focal length of described the first non-spherical lens (2) and the second non-spherical lens (3) is 1.0~1.5, and the focus of the second non-spherical lens (3) is in laser crystal (5).
5. the Cr that utilizes according to claim 1 4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, it is characterized in that described cavity length is less than 20cm, and must meet laser generation generation condition.
6. the Cr that utilizes according to claim 1 4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, it is characterized in that described laser device also comprises polarizer (6), polarizer (6) is positioned between laser crystal (5) and adjustment rack (7), the first non-spherical lens (2), the second non-spherical lens (3), laser front cavity mirror (4), laser crystal (5), polarizer (6), have rotation regulatory function adjustment rack (7), Cr 4+: YAG crystal (8), laser output mirror (9) are co-axial form and exist.
7. the Cr that utilizes according to claim 1 4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, it is characterized in that the placed angle of described polarizer (6) becomes 56.5 degree with optical axis direction, and the extinction ratio of polarizer (6) is greater than 200.
8. one kind is utilized the Cr that utilizes described in the arbitrary claim of claim 1-7 4+: YAG crystalline anisotropy characteristic regulates and controls the laser device regulation and control Cr of passively Q switched laser output characteristic 4+: the method for YAG crystal passively Q switched laser output characteristic, is characterized in that described method is realized by following steps:
Step 1, structure Cr 4+: the output of YAG crystal passively Q switched laser;
Step 2, by rotation, regulate adjustment rack, change Cr 4+: YAG crystal to and oscillating laser polarization direction between angle, and then realize Cr in laserresonator 4+: the anisotropy of YAG crystal energy transmitance changes, and finally realizes the regulation and control of passively Q switched laser output performance.
CN201410225332.XA 2014-05-24 2014-05-24 Laser device and method for adjusting and controlling passively Q-switched laser output characteristics through Cr<4>+: YAG crystal anisotropy characteristics Pending CN103986061A (en)

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CN104269730A (en) * 2014-10-13 2015-01-07 北京光电技术研究所 Passively Q-switched pulse laser
CN104538824A (en) * 2015-01-15 2015-04-22 哈尔滨工业大学 Device and method for utilizing microlens array for outputting multi-beam pulse laser
CN104752948A (en) * 2015-04-17 2015-07-01 哈尔滨工业大学 Device and method for using 456nm all-solid-state laser pumping Pr:YLF to achieve 639nm laser output
CN109560451A (en) * 2017-09-26 2019-04-02 中国科学院电子学研究所 A kind of mechanical Q-switched laser of transmitance modulation

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CN103247935A (en) * 2013-04-19 2013-08-14 王枫秋 Optical anisotropy saturable absorption device, manufacturing method and pulse laser based on device
CN103414101A (en) * 2013-08-14 2013-11-27 北京工业大学 Method and device for improving output characteristic of Nd:YAG passively-Q-switched laser

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Publication number Priority date Publication date Assignee Title
CN101034786A (en) * 2007-02-02 2007-09-12 清华大学 Polarization Q-adjustable laser capable of improving output beam quality
JP2009238983A (en) * 2008-03-27 2009-10-15 Ihi Corp Laser resonator
CN202872169U (en) * 2012-09-28 2013-04-10 长春新产业光电技术有限公司 Semiconductor laser pumped all-solid-state laser with wide pulse frequency adjusting range
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104269730A (en) * 2014-10-13 2015-01-07 北京光电技术研究所 Passively Q-switched pulse laser
CN104269730B (en) * 2014-10-13 2017-09-29 北京光电技术研究所 Passive Q regulation pulse laser
CN104538824A (en) * 2015-01-15 2015-04-22 哈尔滨工业大学 Device and method for utilizing microlens array for outputting multi-beam pulse laser
CN104752948A (en) * 2015-04-17 2015-07-01 哈尔滨工业大学 Device and method for using 456nm all-solid-state laser pumping Pr:YLF to achieve 639nm laser output
CN104752948B (en) * 2015-04-17 2018-03-20 哈尔滨工业大学 One kind utilizes 456nm all-solid state laser pumpings Pr:YLF realizes the device and method of 639nm laser output
CN109560451A (en) * 2017-09-26 2019-04-02 中国科学院电子学研究所 A kind of mechanical Q-switched laser of transmitance modulation

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