CN103986061A - Laser device and method for adjusting and controlling passively Q-switched laser output characteristics through Cr<4>+: YAG crystal anisotropy characteristics - Google Patents
Laser device and method for adjusting and controlling passively Q-switched laser output characteristics through Cr<4>+: YAG crystal anisotropy characteristics Download PDFInfo
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Abstract
Disclosed are a laser device and method for adjusting and controlling passively Q-switched laser output characteristics through Cr<4>+: YAG crystal anisotropy characteristics. The device comprises a semiconductor laser pumping source (1), a first aspherical lens (2), a second aspherical lens (3), a laser front cavity mirror (4), a laser crystal (5), an adjusting frame (7) with a rotary adjusting function, a Cr<4>+: YAG crystal (8) and a laser output mirror (9), wherein the semiconductor laser pumping source (1), the first aspherical lens (2), the second aspherical lens (3), the laser front cavity mirror (4), the laser crystal (5), the adjusting frame (7), the Cr<4>+: YAG crystal (8) and the laser output mirror (9) are arranged in sequence in the beam propagation direction. The method comprises the first step of constructing Cr<4>+: YAG crystal passively Q-switched laser output, and the second step of rotating and adjusting the adjusting frame to achieve anisotropy changes of Cr<4>+: YAG crystal energy transmittance in a laser resonance cavity, and finally adjusting and controlling the passively Q-switched laser output performance. According to the device and method, the passively Q-switched laser output performance is controlled through the Cr<4>+: YAG crystal anisotropy energy transmittance, and the method is simple and easy to implement.
Description
Technical field
The invention belongs to laser technology field, relate to a kind of based on Cr
4+: laser device and the method for YAG crystalline anisotropy characteristic regulation and control passively Q switched laser output characteristic.
Background technology
Q-regulating technique is the optimum method that obtains high repetition, high-peak power, narrow pulse width laser, in the process of Development of Laser Technology, multiple Q-regulating technique has been invented and has successfully been applied in laser system, yet many technology have himself pluses and minuses and applicable elements.Because passive Q-adjusted technology does not need high electric field pulse or rf modulations required in electric-optically Q-switched or acousto-optic Q modulation process, therefore simple in structure, electromagnetic interference is to external world insensitive, and resonator length can be compressed to very short, be conducive to the generation of high repetition, high-peak power, narrow pulse width laser, be highly suitable for to electromagnetic interference immunity and the high applications of volume requirement, such as laser ignition.Due to Cr
4+: YAG crystal has good heat-mechanical property, within the scope of 0.8-1.2 μ m, has larger absorption cross-section, and cheap, is therefore widely used in producing in the middle of the laser of passive Q-adjusted nanosecond pulse and picopulse Cr
4+: YAG crystal is the passive Q-adjusted element being most widely used at present.Conventionally in order to change Cr
4+: YAG crystal passively Q switched laser output characteristic, such as changing the characteristics such as output pulse energy, pulse repetition frequency, pulse duration, generally all can take to change Cr
4+: YAG crystal adjusts Cr
4+: the method for YAG crystal initial transmission, but change Cr
4+: YAG crystal is in chamber, to reinsert optical element, and this will make resonant cavity easily produce imbalance, need to readjust resonant cavity and make it reach optimum state, and process is loaded down with trivial details, and also needs to buy the Cr of different initial transmissions simultaneously
4+: YAG crystal, cost increases.
Summary of the invention
In order to solve routine replacement Cr
4+: YAG crystal reaches defect and other deficiencies such as the existing process of method that changes initial transmission and then realize passively Q switched laser output characteristic is loaded down with trivial details, cost increase, the invention provides a kind of based on Cr
4+: YAG crystalline anisotropy characteristic regulates and controls laser device and the method for the multiple output characteristic of passively Q switched laser.
The object of the invention is to be achieved through the following technical solutions:
A kind of Cr that utilizes
4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, and this device comprises semiconductor laser pumping source, the first non-spherical lens, the second non-spherical lens, laser front cavity mirror, the laser crystal setting gradually along direction of beam propagation, adjustment rack, the Cr with rotation regulatory function
4+: YAG crystal, laser output mirror, laser front cavity mirror and laser output mirror form the resonant cavity of laser oscillator, the laser that launch in semiconductor laser pumping source incides in laser crystal after the first non-spherical lens and the second non-spherical lens collimation focusing, laser crystal absorptive pumping energy, between laser front cavity mirror and laser output mirror, produce oscillating laser, this laser is via Cr
4+: after YAG crystal, will be modulated into impulse form, after laser output mirror, output to outside resonant cavity.
The present invention utilizes Cr
4+: YAG crystalline anisotropy characteristic regulates and controls the multiple output characteristic of passively Q switched laser, inserts and be placed on the Cr having in rotation regulatory function adjustment rack in laserresonator
4+: YAG crystal and polarizer (to the oscillating laser of linear polarization, can add this element, for the oscillating laser of nonlinear polarization, need to add polarizer).
Utilize said method to realize the multiple output performance of regulation and control passively Q switched laser (output pulse energy, pulse repetition frequency, pulse duration etc.), by following steps, realized:
Step 1, structure Cr
4+: the output of YAG crystal passively Q switched laser;
Step 2, by rotation, regulate adjustment rack, change Cr
4+: YAG crystal to and oscillating laser polarization direction between angle, and then realize Cr in laserresonator
4+: the anisotropy of YAG crystal energy transmitance changes, and finally realizes the regulation and control of passively Q switched laser output performance.
The present invention utilizes Cr
4+: YAG crystal presents anisotropic transmitance to the oscillating laser of linear polarization, present anisotropic modulation depth, utilize this feature just can to characteristics such as passively Q switched laser output pulse energy, pulse repetition frequency, pulse durations, regulate easily.It should be noted that, the cutting of different crystal orientations can cause Cr
4+: the difference of YAG crystal energy transmitance anisotropic properties, finally can cause that passively Q switched laser output characteristic regulating effect there are differences, when using the Cr of [100] direction cutting
4+: during YAG crystal, the maximum change amount of pulse energy can reach 50%, the maximum change amount of pulse repetition frequency can reach 30%, maximum this variable of pulse duration can reach 150%.The present invention is by utilizing Cr
4+: YAG crystalline anisotropy's energy transmitance realizes the control of passively Q switched laser output performance, is a kind of simple way.
Accompanying drawing explanation
Fig. 1 is the regulatable Cr of output performance of the present invention
4+: YAG crystal passive Q-regulaitng laser structural representation;
Fig. 2 is the partial enlarged drawing of Fig. 1;
Fig. 3 is for utilizing this method regulation and control Cr
4+: the passive Q-adjusted Nd:GdVO of YAG crystal
4the test result of laser output pulse width;
Fig. 4 is for utilizing this method regulation and control Cr
4+: the passive Q-adjusted Nd:GdVO of YAG crystal
4the test result of laser output pulse repetition frequency;
Fig. 5 is for utilizing this method regulation and control Cr
4+: the passive Q-adjusted Nd:GdVO of YAG crystal
4the test result of laser output pulse energy.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is further described; but be not limited to this; every technical solution of the present invention is modified or is equal to replacement, and not departing from the spirit and scope of technical solution of the present invention, all should be encompassed in protection scope of the present invention.
Embodiment one: as depicted in figs. 1 and 2, present embodiment provides a kind of Cr of utilization
4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, this device comprises semiconductor laser pumping source 1, the first non-spherical lens 2, the second non-spherical lens 3, laser front cavity mirror 4, laser crystal 5, the polarizer 6 (if laser crystal produces linearly polarized laser, this element can not add) setting gradually along direction of beam propagation, adjustment rack 7, the Cr with rotation regulatory function
4+: YAG crystal 8, laser output mirror 9, laser front cavity mirror 4 and laser output mirror 9 form the resonant cavity of laser oscillator.
In present embodiment, the laser that launch in semiconductor laser pumping source 1 incides in laser crystal 5 after the first non-spherical lens 2 and the second non-spherical lens 3 collimation focusings, laser crystal 5 absorptive pumping energy, between laser front cavity mirror 4 and laser output mirror 9, produce oscillating laser, if the oscillating laser producing is nonlinear polarization, after polarizer 6, will be changed to linear polarization laser so, this linear polarization laser is via Cr
4+: after YAG crystal 8, will be modulated into impulse form, after laser output mirror 9, output to outside chamber.
In present embodiment, the first non-spherical lens 2, the second non-spherical lens 3, laser front cavity mirror 4, laser crystal 5, polarizer 6, have rotation regulatory function adjustment rack 7, Cr
4+: YAG crystal 8, laser output mirror 9 are co-axial form and exist.
In present embodiment, the rotation dimension with the adjustment rack 7 of rotation regulatory function is 360 degree, and should indicate scale, and scale resolution is better than 1 degree.
In present embodiment, Cr
4+: YAG crystal 8 can be along the cutting of any crystal orientation, and the cutting of different crystal orientations can cause Cr
4+: the difference of YAG crystalline anisotropy characteristic, finally can cause the difference of passively Q switched laser output characteristic regulating effect, no matter along which kind of crystal orientation cutting, its initial transmission all can not be too small, must be greater than 15%.
In present embodiment, the ratio of the focal length of the first non-spherical lens 2 and the second non-spherical lens 3 is 1.0～1.5, and the focus of the second non-spherical lens 3 must be in laser crystal 5.
In present embodiment, laser front cavity mirror 4 and laser output mirror 9 form the resonant cavity of laser oscillator, and its length is less than 20cm, and must meet laser generation generation condition.
In present embodiment, the placed angle of polarizer 6 becomes 56.5 degree with optical axis direction, and the extinction ratio of polarizer must be greater than 200.
Embodiment two: present embodiment utilizes device described in embodiment one to realize Cr
4+: the regulation and control of YAG crystal passive Q-regulaitng laser output performance, are realized by following steps:
Step 1, structure Cr
4+: the output of YAG crystal passively Q switched laser;
Step 2, rotation adjustment rack 7, change Cr
4+: YAG crystal, to the angle β value 11 between [xxx] and oscillating laser polarization direction 10, can regulate and control passively Q switched laser output characteristic flexibly, as changed output pulse energy, pulse repetition frequency, pulse duration etc.
In implementation process in Fig. 3-Fig. 5, Cr
4+: YAG crystal 8 initial transmissions are 90%, and cutting crystal orientation is along [100] direction, and [xxx] in Fig. 2, [yyy], [zzz] crystal orientation are respectively [001], [010], [100].The cavity length that laser front cavity mirror 4 and laser output mirror 9 form is 16cm, and the ratio of the focal length of the first non-spherical lens 2 and the second non-spherical lens 3 is 1.25, and the rotation dimension of adjustment rack 7 is 360 degree, and scale resolution is 0.5 degree.By rotation adjustment rack, realize Cr
4+: the anisotropy of YAG crystal energy transmitance changes, and maximum this variable of pulse duration can reach 150%, the maximum change amount of pulse repetition frequency can reach 30%, the maximum change amount of pulse energy can reach 50%.
Claims (8)
1. one kind is utilized Cr
4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, it is characterized in that described device comprises semiconductor laser pumping source (1), the first non-spherical lens (2), the second non-spherical lens (3), laser front cavity mirror (4), the laser crystal (5) setting gradually along direction of beam propagation, adjustment rack (7), the Cr with rotation regulatory function
4+: YAG crystal (8), laser output mirror (9), laser front cavity mirror (4) and laser output mirror (9) form the resonant cavity of laser oscillator, the laser that launch in semiconductor laser pumping source (1) incides in laser crystal (5) after the first non-spherical lens (2) and the second non-spherical lens (3) collimation focusing, laser crystal (5) absorptive pumping energy, between laser front cavity mirror (4) and laser output mirror (9), produce oscillating laser, this laser is via Cr
4+: YAG crystal will be modulated into impulse form after (8), after laser output mirror (9), output to outside resonant cavity.
2. the Cr that utilizes according to claim 1
4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, and the rotation dimension described in it is characterized in that with the adjustment rack (7) of rotation regulatory function is 360 degree, and indicates scale, and scale resolution can not be less than 1 degree.
3. the Cr that utilizes according to claim 1
4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, it is characterized in that described Cr
4+: YAG crystal (8) cuts along any crystal orientation, and its initial transmission is greater than 15%.
4. the Cr that utilizes according to claim 1
4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, the ratio that it is characterized in that the focal length of described the first non-spherical lens (2) and the second non-spherical lens (3) is 1.0～1.5, and the focus of the second non-spherical lens (3) is in laser crystal (5).
5. the Cr that utilizes according to claim 1
4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, it is characterized in that described cavity length is less than 20cm, and must meet laser generation generation condition.
6. the Cr that utilizes according to claim 1
4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, it is characterized in that described laser device also comprises polarizer (6), polarizer (6) is positioned between laser crystal (5) and adjustment rack (7), the first non-spherical lens (2), the second non-spherical lens (3), laser front cavity mirror (4), laser crystal (5), polarizer (6), have rotation regulatory function adjustment rack (7), Cr
4+: YAG crystal (8), laser output mirror (9) are co-axial form and exist.
7. the Cr that utilizes according to claim 1
4+: YAG crystalline anisotropy characteristic regulates and controls the laser device of passively Q switched laser output characteristic, it is characterized in that the placed angle of described polarizer (6) becomes 56.5 degree with optical axis direction, and the extinction ratio of polarizer (6) is greater than 200.
8. one kind is utilized the Cr that utilizes described in the arbitrary claim of claim 1-7
4+: YAG crystalline anisotropy characteristic regulates and controls the laser device regulation and control Cr of passively Q switched laser output characteristic
4+: the method for YAG crystal passively Q switched laser output characteristic, is characterized in that described method is realized by following steps:
Step 1, structure Cr
4+: the output of YAG crystal passively Q switched laser;
Step 2, by rotation, regulate adjustment rack, change Cr
4+: YAG crystal to and oscillating laser polarization direction between angle, and then realize Cr in laserresonator
4+: the anisotropy of YAG crystal energy transmitance changes, and finally realizes the regulation and control of passively Q switched laser output performance.
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| CN104269730A (en) * | 2014-10-13 | 2015-01-07 | 北京光电技术研究所 | Passively Q-switched pulse laser |
| CN104538824A (en) * | 2015-01-15 | 2015-04-22 | 哈尔滨工业大学 | Device and method for utilizing microlens array for outputting multi-beam pulse laser |
| CN104752948A (en) * | 2015-04-17 | 2015-07-01 | 哈尔滨工业大学 | Device and method for using 456nm all-solid-state laser pumping Pr:YLF to achieve 639nm laser output |
| CN109560451A (en) * | 2017-09-26 | 2019-04-02 | 中国科学院电子学研究所 | A kind of mechanical Q-switched laser of transmitance modulation |
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| CN104538824A (en) * | 2015-01-15 | 2015-04-22 | 哈尔滨工业大学 | Device and method for utilizing microlens array for outputting multi-beam pulse laser |
| CN104752948A (en) * | 2015-04-17 | 2015-07-01 | 哈尔滨工业大学 | Device and method for using 456nm all-solid-state laser pumping Pr:YLF to achieve 639nm laser output |
| CN104752948B (en) * | 2015-04-17 | 2018-03-20 | 哈尔滨工业大学 | One kind utilizes 456nm all-solid state laser pumpings Pr:YLF realizes the device and method of 639nm laser output |
| CN109560451A (en) * | 2017-09-26 | 2019-04-02 | 中国科学院电子学研究所 | A kind of mechanical Q-switched laser of transmitance modulation |
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Application publication date: 20140813 |