CN103985766A - Transient voltage suppression diode - Google Patents
Transient voltage suppression diode Download PDFInfo
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- CN103985766A CN103985766A CN201410252813.XA CN201410252813A CN103985766A CN 103985766 A CN103985766 A CN 103985766A CN 201410252813 A CN201410252813 A CN 201410252813A CN 103985766 A CN103985766 A CN 103985766A
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- 230000001052 transient effect Effects 0.000 title claims abstract description 19
- 230000001629 suppression Effects 0.000 title abstract 3
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- 230000000630 rising effect Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
The invention discloses a transient voltage suppression diode which comprises an upper table body, a middle table body which is in surface contact with the bottom surface of the upper table body, and a lower table body which is in surface contact with the bottom surface of the middle table body, wherein the outer side surfaces of the upper table body and the lower table body are slopes; the upper table body comprises a first light doping N-type region and a first heavy doping N-type region; the middle table body comprises a first light doping P-type region, a heavy doping P-type region and a second light doping P-type region in sequence from top to bottom; the lower table body comprises a second light doping N-type region and a second heavy doping N-type region; the first heavy doping N-type region is in contact with the first light doping N-type region and is positioned over the first light doping N-type region; the second heavy doping N-type region is in contact with the second light doping N-type region and is positioned under the second light doping N-type region. According to the transient voltage suppression diode, leak current, which is from the surface, in leak current is reduced, and the reversing leak current of the whole device is greatly reduced, so that the power consumption is further reduced; local temperature rising of the device is avoided, and the stability and the reliability of a circuit are improved.
Description
Technical field
The present invention relates to a kind of diode, be specifically related to a kind of transient voltage suppressor diode.
Background technology
Transient voltage suppressor diode TVS can guarantee that circuit and electronic devices and components are avoided static, surge pulse damages, and even loses efficacy.General TVS is parallel to protected circuit two ends, in holding state.Impact when circuit two ends are subject to transient pulse or surge current, and pulse amplitude is while exceeding the puncture voltage of TVS, TVS can become Low ESR the impedance at two ends from high impedance at a terrific speed and realize conducting, and absorbs transient pulse.Under this state, the voltage at its two ends does not change with current value substantially, thus the voltage clamp at its two ends at a predetermined numerical value, this value is about 1.3～1.6 times of puncture voltage, with and circuit element below of protection is not subject to the impact of transient pulse.
Summary of the invention
For the technical problem of above-mentioned existence, the object of the invention is: proposed a kind of transient voltage suppressor diode, this transient voltage suppressor diode reduces in leakage current from surperficial leakage current, greatly reduce the reverse leakage current of whole device, thereby further reduce power consumption, avoid the local temperature rise of device, improved circuit stability and reliability.
Technical solution of the present invention is achieved in that a kind of transient voltage suppressor diode, comprise upper platform body, with the middle stage body of plane-plane contact at the bottom of upper platform body and with the lower platform body of plane-plane contact at the bottom of middle stage body, described upper platform body and be inclined-plane with lower platform body lateral surface separately, this upper platform body comprises the first light dope N-type district, the first heavy doping N-type district, described middle stage body is followed successively by the first doped with P type district, heavy doping p type island region and the second doped with P type district from top to bottom, and this lower platform body comprises the second light dope N-type district, the second heavy doping N-type district; Described the first heavy doping N-type district, the first light dope N-type district contact and are positioned at directly over it, and described the second heavy doping N-type district, the second light dope N-type district contact and be positioned under it;
In described middle stage body, the first doped with P type district contacts with the first light dope N-type district of upper platform body and forms the first PN junction contact-making surface, and in described middle stage body, the second doped with P type district contacts with the second light dope N-type district of lower platform body and forms the second PN junction contact-making surface;
One first passivation protection floor is covered in first fringe region of heavy doping N-type district upper surface and the side surface in the first heavy doping N-type district, one second passivation protection floor is covered in second fringe region of heavy doping N-type district lower surface and the side surface in the second heavy doping N-type district, upper metal level is covered in the middle section in the first heavy doping N-type district, and lower metal layer is covered in the middle section in the second heavy doping N-type district;
The upper area that described the first light dope N-type district contacts with the first heavy doping N-type district and the peripheral regions that is arranged in the first light dope N-type area edge have the first doped N-type district, this in first the upper surface in doped N-type district contact with the lower surface in the first heavy doping N-type district, this in first the lateral surface in doped N-type district extend to upper platform body lateral surface, the lower area that described the first doped with P type district contacts with heavy doping p type island region and the peripheral regions that is arranged in the first doped with P type area edge have first p type island region of adulterating, this lower surface that adulterates p type island region in first contacts with the upper surface of heavy doping p type island region, this lateral surface that adulterates p type island region in first extends to middle stage body lateral surface,
The lower area that described the second light dope N-type district contacts with the second heavy doping N-type district and the peripheral regions that is arranged in the second light dope N-type area edge have the second doped N-type district, this in second the lower surface in doped N-type district contact with the upper surface in the second heavy doping N-type district, this in second the lateral surface in doped N-type district extend to lower platform body lateral surface, the upper area that described the second doped with P type district contacts with heavy doping p type island region and the peripheral regions that is arranged in the second doped with P type area edge have second p type island region of adulterating, this upper surface that adulterates p type island region in second contacts with the lower surface of heavy doping p type island region, this lateral surface that adulterates p type island region in second extends to middle stage body lateral surface.
Related content in technique scheme is explained as follows:
In such scheme, the lateral surface of described upper platform body and with middle stage body in the angle of lateral surface in the first doped with P type district be 135 °-155 °, the lateral surface of described lower platform body and with middle stage body in the angle of lateral surface in the second doped with P type district be 135 °-155 °.
Because technique scheme is used, the present invention compared with prior art has following advantages and effect:
1. transient voltage suppressor diode of the present invention, it comprises upper platform body and the lower platform body with plane-plane contact at the bottom of upper platform body, this upper platform body comprises light dope N-type district, heavy doping N-type district, this lower platform body comprises heavy doping p type island region, doped with P type district, the upper area that light dope N-type district contacts with heavy doping N-type district and the peripheral regions that is arranged in the first light dope N-type area edge have doped N-type district, the upper surface in Ci Zhong doped N-type district contacts with the lower surface in heavy doping N-type district, the lateral surface in Ci Zhong doped N-type district extends to upper platform body lateral surface, the lower area that described doped with P type district contacts with heavy doping p type island region and the peripheral regions that is arranged in doped with P type area edge have doping p type island region, the lower surface of p type island region of adulterating in this contacts with the upper surface of heavy doping p type island region, the lateral surface of p type island region of adulterating in this extends to lower platform body lateral surface, at low pressure (below 10V) TVS under tunnel breakdown pattern, reduce in leakage current from surperficial leakage current, greatly reduce the reverse leakage current of whole device, thereby further reduce power consumption, avoid the local temperature rise of device, circuit stability and reliability are improved.
2. transient voltage suppressor diode of the present invention, its upper platform body and with the lower platform body of plane-plane contact at the bottom of upper platform body, upper platform body and be inclined-plane with upper platform body lateral surface separately, the lateral surface of upper platform body and with the angle of the lateral surface of lower platform body be 135 °-155 °, improve device resistance to elevated temperatures, ensure at high temperature, can face upward reverse current processed and raise fast.
Brief description of the drawings
Below in conjunction with accompanying drawing, technical solution of the present invention is described further:
Accompanying drawing 1 is transient voltage suppressor diode structural representation of the present invention;
In above accompanying drawing: 1, upper platform body; 2, middle stage body; 3, the first light dope N-type district; 4, the first heavy doping N-type district; 5, the second light dope N-type district; 6, the second heavy doping N-type district; 7, the first passivation protection layer; 8, the second passivation protection layer; 9, upper metal level; 10, lower metal layer; 11, doped N-type district in first; 12, the p type island region of adulterating in first; 13, lower platform body; 14, the first doped with P type district; 15, heavy doping p type island region; 16, the second doped with P type district; 17, doped N-type district in second; 18, the p type island region of adulterating in second.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described.
A kind of transient voltage suppressor diode as shown in Figure 1, comprise upper platform body 1, with the middle stage body 2 of 1 end of upper platform body plane-plane contact and with the lower platform body 13 of middle stage body 2 end plane-plane contact, described upper platform body 1 and be inclined-plane with lower platform body 13 lateral surface separately, this upper platform body 1 comprises the first light dope N-type district 3, the first heavy doping N-type district 4, described middle stage body 2 is followed successively by the first doped with P type district 14, heavy doping p type island region 15 and the second doped with P type district 16 from top to bottom, and this lower platform body 2 comprises the second light dope N-type district 5, the second heavy doping N-type district 6; Described the first heavy doping N-type district 4, the first light dope N-type district 3 contact and are positioned at directly over it, and described the second heavy doping N-type district 6, the second light dope N-type district 5 contact and be positioned under it;
In described middle stage body 2, the first doped with P type district 14 contacts with the first light dope N-type district 3 of upper platform body 1 and forms the first PN junction contact-making surface, and in described middle stage body 2, the second doped with P type district 16 contacts with the second light dope N-type district 5 of lower platform body 13 and forms the second PN junction contact-making surface;
One first passivation protection floor 7 is covered in first fringe region of heavy doping N-type district 4 upper surfaces and the side surface in the first heavy doping N-type district 4, one second passivation protection floor 8 is covered in second fringe region of heavy doping N-type district 6 lower surfaces and the side surface in the second heavy doping N-type district 6, upper metal level 9 is covered in the middle section in the first heavy doping N-type district 4, and lower metal layer 10 is covered in the middle section in the second heavy doping N-type district 6;
The upper area that described the first light dope N-type district 3 contacts with the first heavy doping N-type district 4 and the peripheral regions that is arranged in 3 edges, the first light dope N-type district have the first doped N-type district 11, this in first the upper surface in doped N-type district 11 contact with the lower surface in the first heavy doping N-type district 4, this in first the lateral surface in doped N-type district 11 extend to upper platform body 1 lateral surface, the lower area that described the first doped with P type district 14 contacts with heavy doping p type island region 15 and the peripheral regions that is arranged in 14 edges, the first doped with P type district have first p type island region 12 of adulterating, this lower surface that adulterates p type island region 12 in first contacts with the upper surface of heavy doping p type island region 15, this lateral surface that adulterates p type island region 12 in first extends to middle stage body 2 lateral surfaces,
The lower area that described the second light dope N-type district 5 contacts with the second heavy doping N-type district 6 and the peripheral regions that is arranged in 5 edges, the second light dope N-type district have the second doped N-type district 17, this in second the lower surface in doped N-type district 17 contact with the upper surface in the second heavy doping N-type district 6, this in second the lateral surface in doped N-type district 17 extend to lower platform body 13 lateral surfaces, the upper area that described the second doped with P type district 16 contacts with heavy doping p type island region 15 and the peripheral regions that is arranged in 16 edges, the second doped with P type district have second p type island region 18 of adulterating, this upper surface that adulterates p type island region 18 in second contacts with the lower surface of heavy doping p type island region 15, this lateral surface that adulterates p type island region 18 in second extends to middle stage body 2 lateral surfaces.
The lateral surface of above-mentioned upper platform body 1 and with middle stage body 2 in the angle of lateral surface in the first doped with P type district 14 be 138 °, the lateral surface of described lower platform body 13 and with middle stage body 2 in the angle of lateral surface in the second doped with P type district 16 be 140 °; Or, the lateral surface of above-mentioned upper platform body 1 and with middle stage body 2 in the angle of lateral surface in the first doped with P type district 14 be 145 °, the lateral surface of described lower platform body 13 and with middle stage body 2 in the angle of lateral surface in the second doped with P type district 16 be 135 ° ~ 150 °; Or, the lateral surface of above-mentioned upper platform body 1 and with middle stage body 2 in the angle of lateral surface in the first doped with P type district 14 be 150 °, the lateral surface of described lower platform body 13 and with middle stage body 2 in the angle of lateral surface in the second doped with P type district 16 be 138 °.
While adopting above-mentioned transient voltage suppressor diode, its at low pressure (below 10V) TVS under tunnel breakdown pattern, reduce in leakage current from surperficial leakage current, greatly reduce the reverse leakage current of whole device, thereby further reduce power consumption, avoid the local temperature rise of device, improved circuit stability and reliability; Again, its upper platform body and with the lower platform body of plane-plane contact at the bottom of upper platform body, upper platform body and be inclined-plane with upper platform body lateral surface separately, the lateral surface of upper platform body and with the angle of the lateral surface of lower platform body be 135 °-155 °, improve device resistance to elevated temperatures, ensure at high temperature, can face upward reverse current processed and raise fast.
Above-described embodiment is only explanation technical conceive of the present invention and feature; its object is to allow person skilled in the art can understand content of the present invention and be implemented; can not limit the scope of the invention with this; all equivalences that Spirit Essence is done according to the present invention change or modify, and all should be encompassed in protection scope of the present invention.
Claims (2)
1. a transient voltage suppressor diode, it is characterized in that: comprise upper platform body (1), with the middle stage body (2) of upper platform body (1) end plane-plane contact and with the lower platform body (13) of middle stage body (2) end plane-plane contact, described upper platform body (1) and be inclined-plane with lower platform body (13) lateral surface separately, this upper platform body (1) comprises the first light dope N-type district (3), the first heavy doping N-type district (4), described middle stage body (2) is followed successively by the first doped with P type district (14) from top to bottom, heavy doping p type island region (15) and the second doped with P type district (16), this lower platform body (13) comprises the second light dope N-type district (5), the second heavy doping N-type district (6), described the first heavy doping N-type district (4), the first light dope N-type district (3) contact and are positioned at directly over it, and described the second heavy doping N-type district (6), the second light dope N-type district (5) contact and be positioned under it,
In described middle stage body (2), the first doped with P type district (14) contacts with the first light dope N-type district (3) of upper platform body (1) and forms the first PN junction contact-making surface, and in described middle stage body (2), the second doped with P type district (16) contacts with the second light dope N-type district (5) of lower platform body (13) and forms the second PN junction contact-making surface;
One first passivation protection floor (7) is covered in first fringe region of heavy doping N-type district (4) upper surface and the side surface in the first heavy doping N-type district (4), one second passivation protection floor (8) is covered in second fringe region of heavy doping N-type district (6) lower surface and the side surface in the second heavy doping N-type district (6), upper metal level (9) is covered in the middle section in the first heavy doping N-type district (4), and lower metal layer (10) is covered in the middle section in the second heavy doping N-type district (6);
The upper area that described the first light dope N-type district (3) contacts with the first heavy doping N-type district (4) and the peripheral regions that is arranged in the first edge, light dope N-type district (3) have the first doped N-type district (11), this in first the upper surface in doped N-type district (11) contact with the lower surface in the first heavy doping N-type district (4), this in first the lateral surface in doped N-type district (11) extend to upper platform body (1) lateral surface, the lower area that described the first doped with P type district (14) contacts with heavy doping p type island region (15) and the peripheral regions that is arranged in the first edge, doped with P type district (14) have first p type island region (12) of adulterating, this lower surface that adulterates p type island region (12) in first contacts with the upper surface of heavy doping p type island region (15), this lateral surface that adulterates p type island region (12) in first extends to middle stage body (2) lateral surface,
The lower area that described the second light dope N-type district (5) contacts with the second heavy doping N-type district (6) and the peripheral regions that is arranged in the second edge, light dope N-type district (5) have the second doped N-type district (17), this in second the lower surface in doped N-type district (17) contact with the upper surface in the second heavy doping N-type district (6), this in second the lateral surface in doped N-type district (17) extend to lower platform body (13) lateral surface, the upper area that described the second doped with P type district (16) contacts with heavy doping p type island region (15) and the peripheral regions that is arranged in the second edge, doped with P type district (16) have second p type island region (18) of adulterating, this upper surface that adulterates p type island region (18) in second contacts with the lower surface of heavy doping p type island region (15), this lateral surface that adulterates p type island region (18) in second extends to middle stage body (2) lateral surface.
2. transient voltage suppressor diode according to claim 1, it is characterized in that: the lateral surface of described upper platform body (1) and with middle stage body (2) in the angle of lateral surface in the first doped with P type district (14) be 135 °-155 °, the lateral surface of described lower platform body (13) and with middle stage body (2) in the angle of lateral surface in the second doped with P type district (16) be 135 °-155 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410252813.XA CN103985766B (en) | 2014-06-09 | 2014-06-09 | Transient voltage suppression diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410252813.XA CN103985766B (en) | 2014-06-09 | 2014-06-09 | Transient voltage suppression diode |
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| Publication Number | Publication Date |
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| CN103985766A true CN103985766A (en) | 2014-08-13 |
| CN103985766B CN103985766B (en) | 2017-05-24 |
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| CN201410252813.XA Active CN103985766B (en) | 2014-06-09 | 2014-06-09 | Transient voltage suppression diode |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020000565A1 (en) * | 1996-09-25 | 2002-01-03 | Jean-Michel Simmonet | Surface breakdown bidirectional breakover protection component |
| CN201985106U (en) * | 2010-10-19 | 2011-09-21 | 上海美高森美半导体有限公司 | Composite inner passivation layer structure of transient voltage suppression diode |
| CN202034373U (en) * | 2011-03-17 | 2011-11-09 | 苏州固锝电子股份有限公司 | Diode with low power consumption |
| CN103972304A (en) * | 2014-04-18 | 2014-08-06 | 苏州锝耀电子有限公司 | Bidirectional transient voltage restraining semiconductor device |
| CN203941908U (en) * | 2014-06-09 | 2014-11-12 | 苏州市职业大学 | A kind of transient voltage suppressor diode |
-
2014
- 2014-06-09 CN CN201410252813.XA patent/CN103985766B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020000565A1 (en) * | 1996-09-25 | 2002-01-03 | Jean-Michel Simmonet | Surface breakdown bidirectional breakover protection component |
| CN201985106U (en) * | 2010-10-19 | 2011-09-21 | 上海美高森美半导体有限公司 | Composite inner passivation layer structure of transient voltage suppression diode |
| CN202034373U (en) * | 2011-03-17 | 2011-11-09 | 苏州固锝电子股份有限公司 | Diode with low power consumption |
| CN103972304A (en) * | 2014-04-18 | 2014-08-06 | 苏州锝耀电子有限公司 | Bidirectional transient voltage restraining semiconductor device |
| CN203941908U (en) * | 2014-06-09 | 2014-11-12 | 苏州市职业大学 | A kind of transient voltage suppressor diode |
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| CN103985766B (en) | 2017-05-24 |
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