CN103985694B - Integrated circuit package and package assembling thereof - Google Patents

Integrated circuit package and package assembling thereof Download PDF

Info

Publication number
CN103985694B
CN103985694B CN201410242479.XA CN201410242479A CN103985694B CN 103985694 B CN103985694 B CN 103985694B CN 201410242479 A CN201410242479 A CN 201410242479A CN 103985694 B CN103985694 B CN 103985694B
Authority
CN
China
Prior art keywords
integrated circuit
interconnecting member
pin
power
power bus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410242479.XA
Other languages
Chinese (zh)
Other versions
CN103985694A (en
Inventor
叶佳明
谭小春
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hangzhou Silergy Semiconductor Technology Ltd
Original Assignee
Hangzhou Silergy Semiconductor Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hangzhou Silergy Semiconductor Technology Ltd filed Critical Hangzhou Silergy Semiconductor Technology Ltd
Priority to CN201410242479.XA priority Critical patent/CN103985694B/en
Publication of CN103985694A publication Critical patent/CN103985694A/en
Application granted granted Critical
Publication of CN103985694B publication Critical patent/CN103985694B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]

Abstract

Disclose a kind of integrated circuit package and package assembling thereof.Described integrated circuit package includes: semiconductor bare chip, and including being divided into multiple electronic devices of m group, each electronic device includes n electrode of opposed polarity, and wherein m and n is greater than the integer of 1 respectively;First insulating barrier, is positioned at the described surface of semiconductor bare chip;And i power bus, include respectively being positioned at the planar extension on the first insulating barrier and multiple vertical channel parts of each electrode through the first insulating barrier interface unit, wherein i is greater than 1 and is less than or equal to the integer of m*n, wherein, one electrode of all devices at least two electronic device group is electrically connected to each other by least one power bus in described i power bus, and each in described i power bus is connected to an external connection terminals.This integrated circuit package can avoid using the lead frame of finger-like pin, such that it is able to simplify leadframe design, and reduces interconnection resistance and improves heat radiation.

Description

Integrated circuit package and package assembling thereof
Technical field
The present invention relates to semiconductor package, relate more specifically to be applied to switch type regulator Integrated circuit package and package assembling thereof.
Background technology
Switch type regulator, such as DC-DC converter, be used for carrying to various electricity systems For stable voltage source.In low power-supply device, (such as laptop computer, mobile phone etc.), battery management is especially Need high efficiency DC-DC converter.Switch type regulator is converted into height input direct voltage Voltage to frequency, is then filtered high-frequency output voltage and then is converted into VD.
Fig. 1 shows the circuit diagram of typical switch type regulator 10.This switch type regulator Including controlled stage and power stage.Controlled stage includes control chip U1.Power stage includes power device Q1 and Q2.Power device for example, field-effect transistor or bipolar transistor.Power device Q1 and Q2 is connected between input voltage vin and ground GND, and its intermediate node is as outfan Lx.The input and output electrode of control chip U1 is connected to input and output electrode IOs, its drive electrode It is connected to the respective gate electrode of power device Q1 and Q2, is used for controlling power device Q1 and Q2 Conducting and disconnection, thus produce output electric current.
In order to meet the miniaturization of switch type regulator, low control voltage and the big need exporting electric current Ask, multiple power devices of parallel connection can be used in switch type regulator to replace single power device. But, the electrical connection of multiple power devices needs to use the lead frame including multiple finger-like pin, from And additional interconnection resistance and heat dissipation problem may be introduced.
Therefore, in the integrated circuit package being applied to switch type regulator, it is desirable to improve further The layout of power device and connected mode.
Summary of the invention
In view of this, it is an object of the invention to provide a kind of integrated circuit package and package assembling thereof, To solve the problem that its performance is adversely affected by the electrical connection of multiple electronic devices.
According to the first aspect of the invention, it is provided that a kind of integrated circuit package, including: quasiconductor is naked Chip, including being divided into multiple electronic devices of m group, each electronic device includes the n of opposed polarity Individual electrode, wherein m and n is greater than the integer of 1 respectively;First insulating barrier, is positioned at quasiconductor naked The described surface of chip;And i power bus, include respectively being positioned on the first insulating barrier Planar extension and through multiple vertical channels of each electrode of the first insulating barrier interface unit Part, wherein i is greater than 1 and is less than or equal to the integer of m*n, wherein, described i power supply At least one power bus in bus is by one of all devices at least two electronic device group Electrode is electrically connected to each other, and each in described i power bus is connected to an outside and connects Connecting terminal.
Preferably, in described integrated circuit package, described electronic device is selected from diode, crystalline substance At least one in body pipe, resistance, inductance.
At least one preferably, in described integrated circuit package, in described i power bus The planar extension of the first power bus is ribbon;And in described i power bus extremely The planar extension of a few second source bus is sinuous polyline shaped so that described at least one The direction of current flow of individual second source bus is relative to the electricity of at least one the first power bus described Stream flow direction changes.
Preferably, described integrated circuit package also includes: the second insulating barrier, is positioned at semiconductor bare chip Between sheet and the first insulating barrier;And j interconnecting member, include respectively being positioned on the second insulating barrier Planar extension and through second insulating barrier connect power device each electrode multiple vertically Channel part, wherein, at least two interconnecting member in described j interconnecting member is respectively by one One electrode of all devices in electronic device group is electrically connected to each other, and described i power supply is total Described at least two interconnecting member is electrically connected to each other by least one power bus in line.
Preferably, in described integrated circuit package, the plane extension side of described i power bus To for first direction, the plane bearing of trend of described j interconnecting member is second direction, and One direction intersects with second direction.
Preferably, in described integrated circuit package, first direction is vertical with second direction.
At least one preferably, in described integrated circuit package, in described j interconnecting member It is segmentation, and at least one in described i power bus is by the difference of segmentation interconnecting member Section is electrically connected.
At least one preferably, in described integrated circuit package, in described i power bus It it is segmentation.
Segmentation power supply preferably, in described integrated circuit package, in described i power bus The plane of the segmentation interconnecting member in the plane bearing of trend of bus, with described j interconnecting member is prolonged Stretch direction vertical so that in the direction of current flow in Segmented electrical source bus and segmentation interconnecting member Direction of current flow is vertical.
At least one preferably, in described integrated circuit package, in described j interconnecting member The different sections of Segmented electrical source bus are electrically connected.
Preferably, described integrated circuit package also includes lead frame, described lead frame just Segmented electrical At least two difference section of source bus is electrically connected.
Preferably, in described integrated circuit package, described electronic device is field-effect transistor, The electrode of described field-effect transistor includes source electrode, drain and gate.
Preferably, described integrated circuit package also includes lead frame, wherein said i power bus It is connected to described lead frame.
According to the second aspect of the invention, it is provided that a kind of integrated circuit being applied to switch type regulator Assembly, including semiconductor bare chip, including being divided into multiple power devices of two groups, each power Device is included on the surface of semiconductor bare chip the first electrode and the second electrode exposed;First is exhausted Edge layer, is positioned at the described surface of semiconductor bare chip;And first to the 3rd power bus, Include respectively being positioned at the planar extension on the first insulating barrier and connecting power through the first insulating barrier Multiple vertical channel parts of each electrode of device, wherein, the first power bus is by first group of merit First electrode of rate device is electrically connected to each other, and second source bus is by the second of first group of power device First electrode of electrode and second group of power device is electrically connected to each other, and the 3rd power bus is by second Second electrode of group power device is electrically connected to each other, and each in the first to the 3rd power bus Individual it is connected to an external connection terminals.
Preferably, in described integrated circuit package, first and the 3rd power bus plane extend Part is in ribbon;And the planar extension of second source bus is sinuous polyline shaped, make Second source bus direction of current flow relative to first and the 3rd power bus electric current flowing Direction changes.
Preferably, described integrated circuit package also includes: the second insulating barrier, is positioned at semiconductor bare chip Between sheet and the first insulating barrier;And first to fourth interconnecting member, include being positioned at second respectively exhausted Planar extension in edge layer and to connect each electrode of power device through the second insulating barrier many Individual vertical channel part, wherein, the first interconnecting member by the first electrode of first group of power device that This electrical connection, the second electrode of first group of power device is electrically connected to each other by the second interconnecting member, the First electrode of second group of power device is electrically connected to each other by three interconnecting members, and the 4th interconnecting member will Second electrode of second group of power device is electrically connected to each other, and the first power bus to connect first mutual Even parts, second source bus connects second and the 3rd interconnecting member, and the 3rd power bus connects the Four interconnecting members.
Preferably, in described integrated circuit package, the plane of the first to the 3rd power bus extends Direction is first direction, and the plane bearing of trend of first to fourth interconnecting member is second direction, and And first direction intersects with second direction.
Preferably, in described integrated circuit package, first direction is vertical with second direction.
Preferably, in described integrated circuit package, at least one of first to fourth interconnecting member It is segmentation, and the different sections of segmentation interconnecting member are connected electrically in by the first to the 3rd power bus Together.
Preferably, in described integrated circuit package, at least in the first to the 3rd power bus Individual is segmentation.
Preferably, in described integrated circuit package, the second interconnecting member, the 3rd interconnecting member and Second source bus is segmentation, every section and every section of the 3rd interconnecting member of the second interconnecting member Stagger, and every section of bearing of trend of second source bus and the second interconnecting member, the 3rd interconnection Every section of bearing of trend in part is vertical so that the electric current in the second interconnecting member, the 3rd interconnecting member Flow direction is vertical with the direction of current flow in second source bus.
Preferably, in described integrated circuit package, described first to fourth interconnecting member is by segmentation The different sections of power bus are electrically connected.
Preferably, described integrated circuit package also includes lead frame, and described lead frame is by segmentation The different sections of power bus are electrically connected.
Preferably, in described integrated circuit package, described power device is field-effect transistor, Described first electrode is source electrode and in drain electrode of field-effect transistor, and described second electrode is The source electrode of field-effect transistor and drain electrode in another.
Preferably, described integrated circuit package also includes lead frame, wherein said first to the 3rd electricity Source bus is connected to described lead frame.
According to the third aspect of the invention we, it is provided that a kind of package assembling, including above-mentioned integrated electricity Road assembly;Lead frame, including multiple pins, described integrated circuit package is arranged on described lead frame On;And encapsulating compound, described encapsulating compound covers described integrated circuit package, and also covers described Lead frame at least some of so that the respective part of the plurality of pin is exposed for external electrical Connect.
Preferably, in described package assembling, described integrated circuit package includes conductive projection, and And described conductive projection is formed welding flux interconnected with the upper surface of described pin.
Preferably, in described package assembling, described pin include the first thickness Part I and The Part II of the second thickness, wherein the second thickness is more than the first thickness so that the of described pin A part is included in encapsulating compound, and the end of the Part II of described pin and/or lower surface expose to be used In external electrical connections.
Preferably, in described package assembling, the bottom of described package assembling includes four bottom sides Limit, at least one pin in wherein said pin includes two or more Part II, thus Form multiple external contact.
Preferably, in described package assembling, at least one of at least one pin described second Dividing the bottom zone line being positioned at package assembling, at least another Part II is positioned at package assembling Bottom side edges.
Preferably, in described package assembling, at least one pin described connects inside package assembling It is connected to one article of power bus in described first to the 3rd power bus.
Preferably, in described package assembling, at least in described first to the 3rd power bus Individual is segmentation, and at least one pin in described pin is by the difference of the power bus of segmentation Section links together, thus forms public external contact.
Preferably, described package assembling also includes: include the control chip of multiple input and output electrode, Wherein, the bottom of described package assembling has side bottom first to fourth, the plurality of pin bag Include first group of pin for power bus and second group of pin for control chip, the first electricity The first pin in source bus and first group of pin is connected, and what described first pin included is positioned at first Multiple Part II of bottom side;Second source bus and the second pin phase in first group of pin Even, described second pin includes laying respectively at multiple Part II of side bottom second and the 3rd;The The 3rd pin in three power bus and first group of pin is connected, and described 3rd pin includes position respectively Side and multiple Part II of bottom zone line bottom second and the 3rd;And described control The plurality of input and output electrode of coremaking sheet is respectively connecting to the multiple pins in second group of pin, The plurality of pin in described second group of pin includes laying respectively at side bottom the second to the 4th Part II.
Preferably, in described package assembling, the plurality of pin is side and the 4th bottom first The quantity of the external contact formed on the side of bottom is identical, and side and the 3rd end bottom second The quantity of the external contact formed on portion's side is identical.
Preferably, in described package assembling, the plurality of Part II of described first pin carries In voltage supplied signal terminal Vin and ground terminal GND one, described 3rd pin described Multiple Part II provide another in voltage signal terminal Vin and ground terminal GND, institute State the plurality of Part II switching node signal terminal LX of the second pin.
According to the integrated circuit package of the present invention, lead frame is not necessarily referring to power device group design complexity The finger-like pin of layout, such that it is able to simplify the design of lead frame.Even if the merit in power device group Rate number of devices changes, it would however also be possible to employ the lead frame of same size, such that it is able to realize lead frame Standardization.Further, above-mentioned power bus can and lead frame between realize large area and connect Touch, such that it is able to reduce interconnection resistance and improve radiating effect.
In a preferred embodiment, power bus and optional interconnecting member can be segmentations, from And be possible not only to improve layout freedom, and stress can be reduced.
In a preferred embodiment, power bus and optional interconnecting member can change electric current flowing Direction, thus reduce stray inductance, improve electrical property.
Accompanying drawing explanation
By description to the embodiment of the present invention referring to the drawings, the present invention above-mentioned and other Objects, features and advantages will be apparent from, in the accompanying drawings:
Fig. 1 shows the circuit diagram of typical switch type regulator;
Fig. 2 a, 2b and 2c are shown respectively and are applied to switching mode according to the first embodiment of the present invention The perspective view of the integrated circuit package of actuator and the sectional view intercepted along different directions;
Fig. 3 a, 3b and 3c be shown respectively according to the second embodiment of the present invention be applied to switching mode The perspective view of the integrated circuit package of actuator and the sectional view intercepted along different directions;
Fig. 4 a, 4b and 4c be shown respectively according to the third embodiment of the invention be applied to switching mode The perspective view of the integrated circuit package of actuator and the sectional view intercepted along different directions;
Fig. 5 a, 5b and 5c be shown respectively according to the fourth embodiment of the invention be applied to switching mode The decomposition diagram of the integrated circuit package of actuator and the sectional view intercepted along different directions;
Fig. 6 a, 6b, 6c and 6d are shown respectively being applied to out according to the fourth embodiment of the invention The decomposition diagram of the integrated circuit package of pass type actuator and the sectional view intercepted along different directions; And
Fig. 7 a, 7b, 7c and 7d are shown respectively being applied to out according to the fifth embodiment of the invention The sectional view of the decomposition diagram of package assembling, bottom view and the diverse location of pass type actuator;With And
Fig. 8 a, 8b, 8c, 8d and 8e are shown respectively application according to the sixth embodiment of the invention Sectional view in the decomposition diagram of package assembling, bottom view and the diverse location of switch type regulator.
Detailed description of the invention
It is more fully described various embodiments of the present invention hereinafter with reference to accompanying drawing.In various figures, Identical element uses same or similar reference to represent.
For the sake of clarity, the various piece in accompanying drawing is not necessarily to scale.For brevity, The modular construction that can obtain after several steps described in the width figure.Furthermore, it is also possible to save Slightly details known to some, such as, the most not shown solder, encapsulating compound, for The backing material of support lead frame and/or external frame.
Should be appreciated that when describing modular construction, when by one layer, a region is referred to as being positioned at another When layer, another region " above " or " top ", can refer to be located immediately at another floor, another district Above territory, or itself and another layer, also comprise other layer or region between another region. Further, if device is overturn, this layer, region will be located in another layer, another region " under Face " or " lower section ".If being located immediately at another layer, another region above scenario to describe, Herein will use " directly exist ... above " or " ... adjoin above and therewith " form of presentation.
Describe hereinafter the knot of the many specific details, such as integrated circuit package of the present invention Structure, material, size, process technique and technology, in order to be more clearly understood that the disclosure.But as Those skilled in the art it will be appreciated that as, can not realize according to these specific details The disclosure.
Fig. 2 a, 2b and 2c are shown respectively and are applied to switching mode according to the first embodiment of the present invention The perspective view of the integrated circuit package 100 of actuator, and cutting of intercepting of AA along the line and line BB Face figure.As shown in Figure 2 a, line AA is across the first electrode of the power switch of difference group and the second electricity Pole, line BB is across the first electrode of all power switch of same group of power switch.
Integrated circuit package 100 includes semiconductor bare chip 110.In semiconductor bare chip 110 At least define two power device groups and/or optional control chip.Each power device group includes The multiple power devices being connected in parallel.Each power device is included in of semiconductor bare chip The first electrode exposed on surface and the second electrode, and it is positioned at this surface or relative with this surface Control electrode on another surface.In each power device, the first electrode, the second electrode and control Electrode processed is electrically isolated from one.In figures in the following, control electrode is not described for brevity.
Power device is e.g. selected from bipolar transistor and the one of field-effect transistor.Bipolar When property transistor, the first electrode of power device is one in emitter and collector, Second electrode is another in emitter and collector, and controlling electrode is base stage.Scene effect is brilliant When body pipe, the first electrode of power device is in source electrode and drain electrode, the second electrode Be source electrode and leakage in another, control electrode be grid.
In this embodiment, integrated circuit package 100 includes 2 power device groups, each power Device group includes 3 power devices, thus forms the array of 2 × 3 power devices.Substitute In embodiment, each power device group can include 2 or more power device.First power One power device of device group and a corresponding power device of the second power device group form a line. Such as, a power device of the first power device group includes the first electrode 111-1a and the second electrode 111-2a, a power device of the second power device group includes the first electrode 112-1a and second electricity Pole 112-2a, and the of the first electrode 112-1a of a power device and another power device Two electrode 111-2a are adjacent, as shown in Figure 2 b.3 power device rows of the first power device group In a row, 3 power devices of the second power device group line up another row, thus form power device The array of part.Such as, 3 power devices of the first power device group the second electrode 111-2a, 111-2b and 111-2c is adjacent one another are, as shown in Figure 2 c.
Integrated circuit package 100 also include the first insulating barrier 115 and for external electrical connections One power bus 116a, second source bus 116b and the 3rd power bus 116c.First insulation Layer 115 is such as made up of silicon oxide, is positioned on the surface of semiconductor bare chip 110.First power supply Bus 116a, second source bus 116b and the 3rd power bus 116c are such as made up of aluminum or copper, Include respectively being positioned at the planar extension on the first insulating barrier 115 and through the first insulating barrier 115 Multiple vertical channel parts of the electrode of contact power device.The respective plane of above-mentioned power bus is prolonged Extending portion divides for example, ribbon and parallel to each other.First power bus 116a and first power device First electrode electrical connection of each power device in group.Second source bus 116b and first Every in second electrode of each power device in power device group and second power device group First electrode electrical connection of one power device.3rd power bus 116c and second power device Second electrode electrical connection of each power device in group.
In order to provide external electrical connections, the first power bus 116a, second source bus 116b and Can be connected via conductive projection and/or soldered ball between 3rd power bus 116c and lead frame.? In switch type regulator, the first power bus 116a is connected to voltage signal terminal Vin, the second electricity Source bus 116b is connected to switching node signal terminal LX, and the 3rd power bus 116c is connected to connect Ground terminal GND.
In above-mentioned integrated circuit package 100, owing to using the first to the 3rd power bus, draw Wire frame is not necessarily referring to the finger-like pin of power device group design complex topology, such that it is able to simplify lead-in wire The design of frame.Even if the power device quantity in power device group changes, it would however also be possible to employ identical rule The lead frame of lattice, such that it is able to realize the standardization of lead frame.Further, above-mentioned power supply is total Line can and lead frame between realize bump contact, such that it is able to reduce interconnection resistance and improve dissipate Thermal effect.
Fig. 3 a, 3b and 3c be shown respectively according to the second embodiment of the present invention be applied to switching mode The perspective view of the integrated circuit package 200 of actuator, and cutting of intercepting of AA along the line and line BB Face figure.As shown in Figure 3 a, line AA is across the first electrode of the power switch of difference group and the second electricity Pole, line BB is across the first electrode of all power switch of same group of power switch.
Integrated circuit package 200 includes the first insulating barrier 215 and for the first of external electrical connections Power bus 216a, second source bus 216b and the 3rd power bus 216c.First insulating barrier 215 are such as made up of silicon oxide, are positioned on the surface of semiconductor bare chip 210.First power supply is total Line 216a, second source bus 216b and the 3rd power bus 216c are such as made up of aluminum or copper, Include respectively being positioned at the planar extension on the first insulating barrier 215 and through the first insulating barrier 215 Multiple vertical channel parts of the electrode of contact power device.First power bus 216a and first First electrode electrical connection of each power device in power device group.Second source bus 216b The second electrode and second power device with each power device in first power device group First electrode electrical connection of each power device in group.3rd power bus 216c and second Second electrode electrical connection of each power device in power device group.
In order to provide external electrical connections, the first power bus 216a, second source bus 216b and Can be connected via conductive projection and/or soldered ball between 3rd power bus 216c and lead frame.? In switch type regulator, the first power bus 216a is connected to voltage signal terminal Vin, the second electricity Source bus 216b is connected to switching node signal terminal LX, and the 3rd power bus 216c is connected to connect Ground terminal GND.
Second embodiment is with the difference of first embodiment: in integrated circuit package 200, The planar extension of second source bus 216b is sinuous polyline shaped.According to the second embodiment Other parts of integrated circuit package 200 and the integrated circuit package 100 according to first embodiment Appropriate section is identical.
Above-mentioned according in the integrated circuit package 200 of the second embodiment, relative to adjacent first Power bus 216a and the 3rd power bus 216b, electric current is along the stream of second source bus 216b Dynamic direction is the most almost parallel, the most substantially vertical.Therefore, integrated circuit package 200 is further Reduce stray inductance, improve the electrical property of integrated circuit package.
Fig. 4 a, 4b and 4c be shown respectively according to the third embodiment of the invention be applied to switching mode The perspective view of the integrated circuit package 300 of actuator, and cutting of intercepting of AA along the line and line BB Face figure.As shown in fig. 4 a, line AA is across the first electrode of the power switch of difference group and the second electricity Pole, line BB is across the first electrode of all power switch of same group of power switch.
Integrated circuit package 300 includes the first insulating barrier 313 and electrically connect first for interlayer Interconnecting member 314a, the second interconnecting member 314b, the 3rd interconnecting member 314c and the 4th interconnection Part 314d.First insulating barrier 313 is such as made up of silicon oxide, is positioned at semiconductor bare chip 310 On surface.First interconnecting member 314a, the second interconnecting member 314b, the 3rd interconnecting member 314c Such as it is made up of aluminum or copper with the 4th interconnecting member 314d, includes respectively being positioned at the first insulating barrier 313 On planar extension with through the first insulating barrier 313 contact power device electrode multiple hang down Straight passage portion.
The respective planar extension for example, ribbon of above-mentioned interconnecting member and parallel to each other.First First electrode electricity of each power device in interconnecting member 314a and first power device group Connect.Of each power device in second interconnecting member 314b and first power device group Two electrode electrical connections.Each power in 3rd interconnecting member 314c and second power device group First electrode electrical connection of device.Every in 4th interconnecting member 314d and second power device group Second electrode electrical connection of one power device.
Integrated circuit package 300 also include the second insulating barrier 315 and for external electrical connections One power bus 316a, second source bus 316b and the 3rd power bus 316c.Second insulation Layer 315 is such as made up of silicon oxide, is positioned on the surface of the first insulating barrier 313.First power supply is total Line 316a, second source bus 316b and the 3rd power bus 316c are such as made up of aluminum or copper, Include respectively being positioned at the planar extension on the second insulating barrier 315 and through the second insulating barrier 315 Contact the first interconnecting member 314a, the second interconnecting member 314b, the 3rd interconnecting member 314c and Multiple vertical channel parts of at least one interconnecting member in four interconnecting member 314d.
The respective planar extension for example, ribbon of above-mentioned power bus and parallel to each other.Power supply The bearing of trend of the planar extension of bus intersects with the bearing of trend of the extension of interconnecting member. Preferably, the extension of the bearing of trend of the planar extension of power bus and interconnecting member Bearing of trend is perpendicular to one another.First power bus 316a and the first interconnecting member 314a electrical connection. Second source bus 316b and the second interconnecting member 314b and the 3rd interconnecting member 314c all electrically connect. 3rd power bus 316c and the 4th interconnecting member 314a electrical connection.
In order to provide external electrical connections, the first power bus 316a, second source bus 316b and Can be connected via conductive projection and/or soldered ball between 3rd power bus 316c and lead frame.? In switch type regulator, the first power bus 316a is connected to voltage signal terminal Vin, the second electricity Source bus 316b is connected to switching node signal terminal LX, and the 3rd power bus 316c is connected to connect Ground terminal GND.
3rd embodiment is with the difference of first embodiment: in integrated circuit package 300, First power bus 316a, second source bus 316b and the 3rd power bus 316c are via first Interconnecting member 314a, the second interconnecting member 314b, the 3rd interconnecting member 314c and the 4th interconnection Part 314 is connected to each electrode of power device.Integrated circuit package 300 according to the 3rd embodiment Other parts identical with the appropriate section of the integrated circuit package 100 according to first embodiment.
In the above-mentioned integrated circuit package 300 according to the 3rd embodiment, though first power device A power device in part group and the corresponding power device in second power device group are spaced apart Certain distance, or centre arranges other elements, it is also possible to utilize interconnecting member first to interconnect identical All power devices of group, then utilize power bus to realize external connection.Therefore, integrated circuit Assembly 300 further provides the layout freedom of power device.
Fig. 5 a, 5b and 5c be shown respectively according to the fourth embodiment of the invention be applied to switching mode The decomposition diagram of the integrated circuit package 400 of actuator, and AA and line BB intercepting along the line Sectional view.As shown in Figure 5 a, line AA is across first electrode and of the power switch of difference group Two electrodes, line BB is across the first electrode of all power switch of same group of power switch.
Integrated circuit package 400 includes the first insulating barrier 413 and electrically connect first for interlayer Interconnecting member 414a, the second interconnecting member 414b, the 3rd interconnecting member 414c and the 4th interconnection Part 414d.First insulating barrier 413 is such as made up of silicon oxide, is positioned at semiconductor bare chip 410 On surface.First interconnecting member 414a, the second interconnecting member 414b, the 3rd interconnecting member 414c Such as it is made up of aluminum or copper with the 4th interconnecting member 414d, includes respectively being positioned at the first insulating barrier 413 On planar extension with through the first insulating barrier 413 contact power device electrode multiple hang down Straight passage portion.
The respective planar extension for example, ribbon of above-mentioned interconnecting member and parallel to each other.First First electrode electricity of each power device in interconnecting member 414a and first power device group Connect.Of each power device in second interconnecting member 414b and first power device group Two electrode electrical connections.Each power in 3rd interconnecting member 414c and second power device group First electrode electrical connection of device.Every in 4th interconnecting member 414d and second power device group Second electrode electrical connection of one power device.
Integrated circuit package 400 includes the second insulating barrier 415 and for the first of external electrical connections Power bus 416a, second source bus 416b and the 3rd power bus 416c.Second insulating barrier 415 are such as made up of silicon oxide, are positioned on the surface of the first insulating barrier 413.First power bus 416a, second source bus 416b and the 3rd power bus 416c are such as made up of aluminum or copper, point Do not include being positioned at the planar extension on the second insulating barrier 415 and connecing through the second insulating barrier 415 Touch the first interconnecting member 414a, the second interconnecting member 414b, the 3rd interconnecting member 414c and the 4th Multiple vertical channel parts of at least one interconnecting member in interconnecting member 414d.
The respective planar extension for example, ribbon of above-mentioned power bus and parallel to each other.Power supply The bearing of trend of the planar extension of bus is parallel with the bearing of trend of the extension of interconnecting member Or intersect.Preferably, the prolonging of the bearing of trend of the planar extension of power bus and interconnecting member The bearing of trend that extending portion is divided is perpendicular to one another.First power bus 416a and the first interconnecting member 414a Electrical connection.Second source bus 416b and the second interconnecting member 414b and the 3rd interconnecting member 414c All electrically connect.3rd power bus 416c and the 4th interconnecting member 414d electrical connection.
In order to provide external electrical connections, the first power bus 416a, second source bus 416b and Can be connected via conductive projection and/or soldered ball between 3rd power bus 416c and lead frame.? In switch type regulator, the first power bus 416a is connected to voltage signal terminal Vin, the second electricity Source bus 416b is connected to switching node signal terminal LX, and the 3rd power bus 416c is connected to connect Ground terminal GND.
4th embodiment is with the difference of the 3rd embodiment: in integrated circuit package 400, Second interconnecting member 414b, the 3rd interconnecting member 414c and second source bus 416b are segmentation , as illustrated in figures 5 b and 5 c.Every section and the 3rd interconnecting member 414c of second interconnecting member 414b Every section stagger.Every section of bearing of trend of second source bus 416b and the second interconnecting member 414b, Every section of bearing of trend in 3rd interconnecting member 414c is vertical, and connects the second interconnecting member 414b In one section and the 3rd interconnecting member 414c in one section.Second interconnecting member 414b and the 3rd mutual Even the different sections of second source bus 416b are linked together by parts 414c.On the other hand, The different sections of two power bus 416b are by the second interconnecting member 414b and the 3rd interconnecting member 414c Different sections link together.Other parts of integrated circuit package 400 according to the 4th embodiment Identical with the appropriate section of the integrated circuit package 100 according to the 3rd embodiment.
In the above-mentioned integrated circuit package 400 according to the 4th embodiment, the power bus of segmentation and Interconnecting member is possible not only to improve layout freedom, and can reduce stress.Additionally, second is mutual The even direction of current flow in parts 414b, the 3rd interconnecting member 414c and second source bus 416b In direction of current flow vertical.Total relative to the first adjacent power bus 416a and the 3rd power supply Line 416b, electric current is along the second interconnecting member 414b, the 3rd interconnecting member 414c and second source The flow direction of bus 416b is the most almost parallel, the most substantially vertical.Therefore, integrated circuit group Part 400 further reduces stray inductance, improves the electrical property of integrated circuit package.
Fig. 6 a, 6b, 6c and 6d are shown respectively being applied to out according to the fifth embodiment of the invention The decomposition diagram of the integrated circuit package 500 of pass type actuator, and AA, line B1B1 along the line The sectional view intercepted with B2B2.As shown in Figure 6 a, line AA is across the power switch of difference group First electrode and the second electrode, line B1B1 is across all power switch of second group of power switch Second electrode, line B2B2 is across the second electrode of all power switch of first group of power switch.
Integrated circuit package 500 includes the first insulating barrier 513 and electrically connect first for interlayer Interconnecting member 514a, the second interconnecting member 514b, the 3rd interconnecting member 514c and the 4th interconnection Part 514d.First insulating barrier 513 is such as made up of silicon oxide, is positioned at semiconductor bare chip 410 On surface.First interconnecting member 514a, the second interconnecting member 514b, the 3rd interconnecting member 514c Such as it is made up of aluminum or copper with the 4th interconnecting member 514d, includes respectively being positioned at the first insulating barrier 513 On planar extension with through the first insulating barrier 513 contact power device electrode multiple hang down Straight passage portion.
The respective planar extension for example, ribbon of above-mentioned interconnecting member and parallel to each other.First First electrode electricity of each power device in interconnecting member 514a and first power device group Connect.Of each power device in second interconnecting member 514b and first power device group Two electrode electrical connections.Each power in 3rd interconnecting member 514c and second power device group First electrode electrical connection of device.Every in 4th interconnecting member 514d and second power device group Second electrode electrical connection of one power device.
Integrated circuit package 500 includes the second insulating barrier 515 and for the first of external electrical connections Power bus 516a, second source bus 516b and the 3rd power bus 516c.Second insulating barrier 515 are such as made up of silicon oxide, are positioned on the surface of the first insulating barrier 513.First power bus 516a, second source bus 516b and the 3rd power bus 516c are such as made up of aluminum or copper, point Do not include being positioned at the planar extension on the second insulating barrier 515 and connecing through the second insulating barrier 515 Touch the first interconnecting member 514a, the second interconnecting member 514b, the 3rd interconnecting member 514c and the 4th Multiple vertical channel parts of at least one interconnecting member in interconnecting member 514d.
The respective planar extension for example, ribbon of above-mentioned power bus and parallel to each other.Power supply The bearing of trend of the planar extension of bus intersects with the bearing of trend of the extension of interconnecting member. Preferably, the extension of the bearing of trend of the planar extension of power bus and interconnecting member Bearing of trend is perpendicular to one another.First power bus 516a and the second interconnecting member 514b and the 4th mutual Even parts 514d all electrically connects.Second source bus 516b and the 3rd interconnecting member 514c electrical connection. 3rd power bus 516c and the first interconnecting member 514a electrical connection.
In order to provide external electrical connections, the first power bus 516a, second source bus 516b and Can be connected via conductive projection and/or soldered ball between 3rd power bus 516c and lead frame.? In switch type regulator, a part of the first power bus 516a can be as voltage signal terminal LX, a part for second source bus 516b can as switching node signal terminal Vin, 3rd power bus 516c is connected to ground terminal GND.
5th embodiment is with the difference of the 3rd embodiment: in integrated circuit package 500, First interconnecting member 514a, the 3rd interconnecting member 514c and the 4th power bus 514d are segmentation , as illustrated in figures 5 b and 5 c.First interconnecting member 514a, the 3rd interconnecting member 514c and Every section of four power bus 514d is staggered.First power bus 516a is not only by the second interconnecting member 514b and the 4th interconnecting member 514d is electrically connected, and by the 4th interconnecting member 514d's Different sections are electrically connected.Second source bus 516b is by the difference of the 3rd interconnecting member 514c Section is electrically connected.3rd power bus 516c is by the different sections electricity of the first interconnecting member 514a Link together.Other parts of integrated circuit package 500 according to the 5th embodiment with according to the The appropriate section of the integrated circuit package 100 of three embodiments is identical.
In the above-mentioned integrated circuit package 500 according to the 5th embodiment, the interconnecting member of segmentation is not Only can improve layout freedom, and stress can be reduced.Even if in first power device group A power device and second power device group in corresponding power device be spaced apart a spacing From, or centre arranges other elements, it is also possible to utilize the institute that first interconnecting member interconnects identical group There is power device, then utilize power bus to realize external connection.Therefore, integrated circuit package 500 Further provide the layout freedom of power device.
Fig. 7 a, 7b, 7c and 7d are shown respectively being applied to out according to the fifth embodiment of the invention The decomposition diagram of package assembling 1000 of pass type actuator, bottom view and AA along the line and line The sectional view that BB intercepts.As shown in Figure 7b, line AA is along the length of wherein power bus Direction extends, and across the external pin of this power bus, line BB is total along another power supply The length direction of line extends, and across the external pin of this power bus.
As example, comprise according to the first embodiment of the present invention in package assembling 1000 is integrated Circuit unit 100.As described above, integrated circuit package 100 include semiconductor bare chip 110, First power bus 116a, second source bus 116b and the 3rd power bus 116c, Yi Ji One insulating barrier 115.Inside semiconductor bare chip 110, the first power bus 116a is by first group First electrode of power device is electrically connected to each other, and second source bus 116b is by first group of power device The second electrode and the first electrode of second group of power device be electrically connected to each other, the 3rd power bus Second electrode of second group of power device is electrically connected to each other by 116c.
Integrated circuit package 100 includes multiple conductive projection 118 (and/or soldered ball).In figure 7 a For the sake of clarity, it is expressed as conductive projection 118 separating with integrated circuit package 100.But, Should be appreciated that a part for conductive projection 118 actually integrated circuit package 100.First electricity Each of source bus 116a, second source bus 116b and the 3rd power bus 116c with at least One conductive projection interconnection.Integrated circuit package 100 can also include being formed together with power device Control chip (not shown) in semiconductor bare chip 110.The input and output electrode of control chip Interconnect with conductive projection 118 respectively.
Integrated circuit package 100 is arranged on lead frame 600.Such as, integrated circuit package 100 Conductive projection 118 formed welding flux interconnected with the upper surface of the pin of lead frame 600.Lead frame 600 Pin include Part I and the Part II of the second thickness of the first thickness, wherein first is thick Degree is less than the second thickness.
Encapsulating compound 700 covers integrated circuit package 100, and also covers lead frame 600 at least A part.In lead frame 600, the Part I of pin is included in encapsulating compound 700, and second End or the lower surface of part are exposed for external electrical connections.Each pin can include two or More Part II, thus form multiple external contact.Can by the etching of selection area or Impressing forms Part I and the Part II of pin.
The bottom of package assembling 1000 has side bottom first to fourth.The plurality of pin includes First group of pin for power bus and second group of pin for control chip.Such as, institute State the quantity phase of the external contact that multiple pin is formed on side bottom side and the 4th bottom first With, and the quantity of the external contact formed on side bottom side and the 3rd bottom second is identical.
In an example, the first pin 601a of lead frame 600 and integrated circuit package 100 The first power bus 116a be connected, the second pin 601b and integrated circuit of lead frame 600 Second source bus 116b of assembly 100 is connected, the 3rd pin 601c of lead frame 600 with 3rd power bus 116c of integrated circuit package 100 is connected.Such as, the of lead frame 600 One pin 601a provides voltage signal terminal Vin, and the second pin 601b of lead frame 600 provides Switching node signal terminal LX, the 3rd pin 601c of lead frame 600 provide ground terminal GND.
First pin 601a includes three Part II being positioned at the first side of package assembling 1000, Second side that second pin 601b includes laying respectively at package assembling 1000 and the 3rd side each One Part II, the 3rd pin 601c includes the second side laying respectively at package assembling 1000 With each Part II of the 3rd side and be positioned at second in the middle of package assembling 1000 Part.
Fig. 8 a, 8b, 8c, 8d and 8e are shown respectively application according to the sixth embodiment of the invention In the decomposition diagram of package assembling 2000 of switch type regulator, bottom view and AA along the line, The sectional view of the diverse location that line BB and line CC intercepts.As shown in Figure 8 b, line AA, line BB Extend respectively along the length direction of different electrical power bus with line CC, and total across corresponding power supply The external pin of line.
As example, comprise according to the fourth embodiment of the invention in package assembling 2000 is integrated Circuit unit 400.As described above, integrated circuit package 400 include semiconductor bare chip 410, First power bus 416a, second source bus 416b and the 3rd power bus 416c, Yi Ji One insulating barrier 415.Inside semiconductor bare chip 410, the first power bus 416a is by first group First electrode of power device is electrically connected to each other, and second source bus 416b is by first group of power device The second electrode and the first electrode of second group of power device be electrically connected to each other, the 3rd power bus Second electrode of second group of power device is electrically connected to each other by 416c.
Integrated circuit package 400 includes multiple conductive projection 418 (and/or soldered ball).In Fig. 8 a For the sake of clarity, it is expressed as conductive projection 418 separating with integrated circuit package 400.But, Should be appreciated that a part for conductive projection 418 actually integrated circuit package 400.First electricity Each of source bus 416a, second source bus 416b and the 3rd power bus 416c with at least One conductive projection interconnection.Integrated circuit package 400 can also include being formed together with power device Control chip (not shown) in semiconductor bare chip 410.The input and output electrode of control chip Interconnect with conductive projection 418 respectively.
Integrated circuit package 400 is arranged on lead frame 600.Such as, integrated circuit package 400 Conductive projection 418 formed welding flux interconnected with the upper surface of the pin of lead frame 600.Lead frame 600 Pin include Part I and the Part II of the second thickness of the first thickness, wherein first is thick Degree is less than the second thickness.
Encapsulating compound 700 covers integrated circuit package 400, and also covers lead frame 600 at least A part.In lead frame 600, the Part I of pin is included in encapsulating compound 700, and second End or the lower surface of part are exposed for external electrical connections.Each pin can include two or More Part II, thus form multiple external contact.Can by the etching of selection area or The Part I of impressing formation pin and Part II form Part I and the Part II of pin.
The bottom of package assembling 2000 has side bottom first to fourth.The plurality of pin includes First group of pin for power bus and second group of pin for control chip.Such as, institute State the quantity phase of the external contact that multiple pin is formed on side bottom side and the 4th bottom first With, and the quantity of the external contact formed on side bottom side and the 3rd bottom second is identical.
In an example, the first pin 601a of lead frame 600 and integrated circuit package 400 The first power bus 416a be connected, the second pin 601b and integrated circuit of lead frame 600 Second source bus 416b of assembly 400 is connected, the 3rd pin 601c of lead frame 600 with 3rd power bus 416c of integrated circuit package 400 is connected.Such as, the of lead frame 600 One pin 601a provides voltage signal terminal Vin, and the second pin 601b of lead frame 600 provides Switching node signal terminal LX, the 3rd pin 601c of lead frame 600 provide ground terminal GND.
See the 4th embodiment shown in Fig. 5 a, the second source bus in integrated circuit package 400 416b is segmentation.Inside integrated circuit package 400, the second interconnecting member 414b and the 3rd The different sections of second source bus 416b are linked together by interconnecting member 414c, and with first Second electrode electrical connection of each power device in individual power device group, thus realize the second electricity Electrical connection between source bus 416b and power device.Outside integrated circuit package 400, lead-in wire The different sections of second source bus 416b are linked together by the second pin 601b of frame 600, from And provide public external electrical connections, as shown in figure 8d.
First pin 601a includes three Part II being positioned at the first side of package assembling 2000, Second side that second pin 601b includes laying respectively at package assembling 2000 and the 3rd side each One Part II, the 3rd pin 601c includes the second side laying respectively at package assembling 2000 With each Part II of the 3rd side and be positioned at second in the middle of package assembling 2000 Part.Other pins of lead frame 600 may be used for the control core in semiconductor bare chip 410 The electrode of sheet provides external electrical connections.
Different from the package assembling of prior art, in the package assembling 1000 and 2000 of the present invention, Lead frame 600 is not only included at least one second of four the side exposures in bottom of package assembling Point, and include at least another Part II, the example being positioned at the bottom zone line of package assembling Mid portion as shown in Fig. 7 b, Fig. 8 b.This mid portion can reduce connection resistance, improves Current carrying capacity, and can serve as heat sink pad, improve the radiating effect of package assembling.
Such as, conventional QFN encapsulation (QFN) includes the bottom being positioned at package assembling The die pad of zone line and be positioned at multiple external connection terminals of four sides in bottom of package assembling. At the package assembling 1000 and 2000 of the present invention when being applied to QFN, use and be positioned at package assembling Bottom zone line Part II replace die pad.That is, in the package assembling of the present invention, The bottom zone line of package assembling is also used as external connection terminals and heat sink pad.
In the above-described embodiments, describe and include the integrated circuit package of power device and power bus And package assembling.
In alternate embodiments, can use in diode, transistor, resistance, inductance At least one electronic device replace power device.
Additionally, in alternate embodiments, electronic device can be divided into m group, and each electronics Device can include n electrode, and wherein m and n is greater than the integer of 1 respectively.First insulating barrier It is positioned at the described surface of semiconductor bare chip.Integrated circuit package also includes i power bus, Include respectively being positioned at the planar extension on the first insulating barrier and through the first insulating barrier interface unit Multiple vertical channel parts of each electrode, wherein i is greater than 1 and less than or equal to m*n's Integer.At least one power bus in described i power bus is by least two electronic device group In an electrode of all devices be electrically connected to each other, and each in described i power bus Individual it is connected to an external connection terminals.
It should be noted that, in this article, the relational terms of such as first and second or the like is only It is used for separating an entity or operation with another entity or operating space, and not necessarily requires Or imply relation or the order that there is any this reality between these entities or operation.And, Term " includes ", " comprising " or its any other variant are intended to comprising of nonexcludability, So that include that the process of a series of key element, method, article or equipment not only include that those are wanted Element, but also include other key elements being not expressly set out, or also include for this process, The key element that method, article or equipment are intrinsic.In the case of there is no more restriction, by statement The key element that " including one ... " limits, it is not excluded that include the process of described key element, method, Article or equipment there is also other identical element.
According to embodiments of the invention as described above, these embodiments do not have detailed descriptionthe own Details, be also not intended to the specific embodiment that this invention is only described.Obviously, as described above, Can make many modifications and variations.These embodiments are chosen and specifically described to this specification, be in order to Preferably explain the principle of the present invention and actual application, so that skilled artisan's energy The present invention and amendment on the basis of the present invention is utilized to use well.The present invention is only wanted by right Ask the restriction of book and four corner thereof and equivalent.

Claims (31)

1. an integrated circuit package, including:
Semiconductor bare chip, including being divided into multiple electronic devices of m group, each electronic device includes N electrode of opposed polarity, wherein m and n is greater than the integer of 1 respectively;
First insulating barrier, is positioned at the surface of semiconductor bare chip;
I power bus, includes being positioned at the planar extension on the first insulating barrier and respectively through the Multiple vertical channel parts of each electrode of one insulating barrier interface unit, wherein i is greater than 1 also And the integer less than or equal to m*n;
Second insulating barrier, between semiconductor bare chip and the first insulating barrier;And
J interconnecting member, includes being positioned at the planar extension on the second insulating barrier and respectively through the Two insulating barriers connect multiple vertical channel parts of each electrode of power device,
Wherein, at least one power bus in described i power bus is by least two electronics device One electrode of all devices in part group is electrically connected to each other, and
Each in described i power bus is connected to an external connection terminals,
Wherein, at least two interconnecting member in described j interconnecting member is respectively by an electronics device One electrode of all devices in part group is electrically connected to each other, and
At least one power bus in described i power bus is by described at least two interconnecting member It is electrically connected to each other.
Integrated circuit package the most according to claim 1, wherein
The planar extension of at least one the first power bus in described i power bus is bar Banding;And
The planar extension of at least one the second source bus in described i power bus is in wriggling The polyline shaped of Yan so that the direction of current flow of at least one second source bus described is relative to institute The direction of current flow stating at least one the first power bus changes.
Integrated circuit package the most according to claim 1, wherein said i power bus Plane bearing of trend is first direction, and the plane bearing of trend of described j interconnecting member is second party To, and first direction intersects with second direction.
Integrated circuit package the most according to claim 3, wherein first direction and second direction Vertically.
Integrated circuit package the most according to claim 1, wherein
At least one in described j interconnecting member is segmentation, and described i power bus In at least one the different sections of segmentation interconnecting member are electrically connected.
Integrated circuit package the most according to claim 5, wherein
At least one in described i power bus is segmentation.
Integrated circuit package the most according to claim 6, wherein
The plane bearing of trend of the Segmented electrical source bus in described i power bus, with described j The plane bearing of trend of the segmentation interconnecting member in interconnecting member is vertical so that in Segmented electrical source bus Direction of current flow vertical with the direction of current flow in segmentation interconnecting member.
8. according to the integrated circuit package described in claim 6, wherein, described j interconnecting member In at least one the different sections of Segmented electrical source bus are electrically connected.
9., according to the integrated circuit package described in claim 6, also include lead frame, described in draw At least two difference section of wire frame just Segmented electrical source bus is electrically connected.
10., according to the integrated circuit package according to any one of claim 1-7, also include lead-in wire Frame, wherein said i power bus is connected to described lead frame.
11. 1 kinds of integrated circuit packages being applied to switch type regulator, including:
Semiconductor bare chip, including being divided into multiple power devices of two groups, each power device includes The first electrode exposed on the surface of semiconductor bare chip and the second electrode;
First insulating barrier, is positioned at the described surface of semiconductor bare chip;And
First to the 3rd power bus, includes the planar extension being positioned on the first insulating barrier respectively With connect multiple vertical channel parts of each electrode of power device through the first insulating barrier,
Wherein, the first electrode of first group of power device is electrically connected to each other by the first power bus, the Two power bus are by the second electrode of first group of power device and the first electricity of second group of power device Pole is electrically connected to each other, and the second electrode of second group of power device is electrically connected to each other by the 3rd power bus, And
Each in first to the 3rd power bus is connected to an external connection terminals.
12. integrated circuit packages according to claim 11, wherein
First and the 3rd the planar extension of power bus be ribbon;And
The planar extension of second source bus is sinuous polyline shaped so that second source bus Direction of current flow relative to first and the 3rd power bus direction of current flow change.
13. integrated circuit packages according to claim 11, also include:
Second insulating barrier, between semiconductor bare chip and the first insulating barrier;And
First to fourth interconnecting member, includes the planar extension being positioned on the second insulating barrier respectively With connect multiple vertical channel parts of each electrode of power device through the second insulating barrier,
Wherein, the first electrode of first group of power device is electrically connected to each other by the first interconnecting member, the Second electrode of first group of power device is electrically connected to each other by two interconnecting members, and the 3rd interconnecting member will First electrode of second group of power device is electrically connected to each other, and the 4th interconnecting member is by second group of power device Second electrode of part is electrically connected to each other, and
First power bus connects the first interconnecting member, and second source bus connection second and the 3rd is mutual Even parts, the 3rd power bus connects the 4th interconnecting member.
14. integrated circuit packages according to claim 13, wherein the first to the 3rd power supply is total The plane bearing of trend of line is first direction, and the plane bearing of trend of first to fourth interconnecting member is Second direction, and first direction intersects with second direction.
15. integrated circuit packages according to claim 13, wherein first direction and second party To vertically.
16. integrated circuit packages according to claim 13, wherein
At least one of first to fourth interconnecting member is segmentation, and the first to the 3rd power supply is total The different sections of segmentation interconnecting member are electrically connected by line.
17. integrated circuit packages according to claim 16, wherein
At least one in first to the 3rd power bus is segmentation.
18. integrated circuit packages according to claim 17, wherein
Second interconnecting member, the 3rd interconnecting member and second source bus are segmentation, and second is mutual Even every section of parts is staggered with every section of the 3rd interconnecting member, and every section of second source bus prolongs Stretch direction vertical with every section of bearing of trend in the second interconnecting member, the 3rd interconnecting member so that the Direction of current flow in two interconnecting members, the 3rd interconnecting member and the electric current in second source bus Flow direction is vertical.
19. integrated circuit packages according to claim 17, wherein, described first to fourth The different sections of Segmented electrical source bus are electrically connected by interconnecting member.
20. integrated circuit packages according to claim 17, also include lead frame, and institute State lead frame the different sections of Segmented electrical source bus to be electrically connected.
21. according to the integrated circuit package according to any one of claim 11-18, also includes drawing Wire frame, wherein said first to the 3rd power bus is connected to described lead frame.
22. 1 kinds of package assemblings, including:
According to the integrated circuit package according to any one of claim 11-21;
Lead frame, including multiple pins, described integrated circuit package is arranged on described lead frame; And
Encapsulating compound, described encapsulating compound covers described integrated circuit package, and also covers described lead-in wire Frame at least some of so that the respective part of the plurality of pin is exposed for external electrical connections.
23. package assemblings according to claim 22, wherein, described integrated circuit package Including conductive projection, and described conductive projection is formed welding flux interconnected with the upper surface of described pin.
24. package assemblings according to claim 23, wherein, described pin includes that first is thick The Part I of degree and the Part II of the second thickness, wherein the second thickness is more than the first thickness, makes The Part I of described pin is included in encapsulating compound, the end of the Part II of described pin and/ Or lower surface is exposed for external electrical connections.
25. package assemblings according to claim 24, the bottom of described package assembling includes four Individual bottom side, at least one pin in wherein said pin includes two or more second Point, thus form multiple external contact.
26. package assemblings according to claim 25, at least one pin wherein said is extremely A few Part II is positioned at the bottom zone line of package assembling, at least another Part II position Bottom side edges in package assembling.
27. package assemblings according to claim 25, at least one pin wherein said is in envelope Arrangement is connected internally to one article of power bus in described first to the 3rd power bus.
28. package assemblings according to claim 24, wherein said first to the 3rd power supply is total At least one in line is segmentation, and at least one pin in described pin is by the electricity of segmentation The different sections of source bus link together, thus form public external contact.
29. package assemblings according to claim 24, also include:
Including the control chip of multiple input and output electrodes,
Wherein, the bottom of described package assembling has a side bottom first to fourth, the plurality of draws Foot includes first group of pin for power bus and second group of pin for control chip,
The first pin in first power bus and first group of pin is connected, and described first pin includes Be positioned at multiple Part II of side bottom first;
Second source bus is connected with the second pin in first group of pin, and described second pin includes Lay respectively at multiple Part II of side bottom second and the 3rd;
The 3rd pin in 3rd power bus and first group of pin is connected, and described 3rd pin includes Lay respectively at side and multiple Part II of bottom zone line bottom second and the 3rd;And
The plurality of input and output electrode of described control chip is respectively connecting in second group of pin Multiple pins, the plurality of pin in described second group of pin includes laying respectively at second to the 4th The Part II of bottom side.
30. package assemblings according to claim 29, wherein, the plurality of pin is first The quantity of the external contact formed on side bottom the side and the 4th of bottom is identical, and at second end The quantity of the external contact formed on side bottom portion's side and the 3rd is identical.
31. package assemblings according to claim 29, wherein, described first pin described Multiple Part II provide in voltage signal terminal and ground terminal, described 3rd pin The plurality of Part II provides another in voltage signal terminal and ground terminal, and described second The plurality of Part II switching node signal terminal of pin.
CN201410242479.XA 2014-03-06 2014-05-30 Integrated circuit package and package assembling thereof Active CN103985694B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410242479.XA CN103985694B (en) 2014-03-06 2014-05-30 Integrated circuit package and package assembling thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN2014100804332 2014-03-06
CN201410080433.2A CN103824838A (en) 2014-03-06 2014-03-06 Integrated circuit module
CN201410080433.2 2014-03-06
CN201410242479.XA CN103985694B (en) 2014-03-06 2014-05-30 Integrated circuit package and package assembling thereof

Publications (2)

Publication Number Publication Date
CN103985694A CN103985694A (en) 2014-08-13
CN103985694B true CN103985694B (en) 2016-11-02

Family

ID=50759815

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201410080433.2A Pending CN103824838A (en) 2014-03-06 2014-03-06 Integrated circuit module
CN201410242479.XA Active CN103985694B (en) 2014-03-06 2014-05-30 Integrated circuit package and package assembling thereof

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201410080433.2A Pending CN103824838A (en) 2014-03-06 2014-03-06 Integrated circuit module

Country Status (1)

Country Link
CN (2) CN103824838A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108807316B (en) * 2017-08-14 2020-07-10 苏州捷芯威半导体有限公司 Semiconductor packaging structure and semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142480A (en) * 1993-11-17 1995-06-02 Hitachi Ltd Semiconductor integrated circuit device and fabrication thereof
US5789811A (en) * 1994-01-25 1998-08-04 Lsi Logic Corporation Surface mount peripheral leaded and ball grid array package
CN1893094A (en) * 2005-06-30 2007-01-10 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
CN101523611A (en) * 2006-10-04 2009-09-02 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142480A (en) * 1993-11-17 1995-06-02 Hitachi Ltd Semiconductor integrated circuit device and fabrication thereof
US5789811A (en) * 1994-01-25 1998-08-04 Lsi Logic Corporation Surface mount peripheral leaded and ball grid array package
CN1893094A (en) * 2005-06-30 2007-01-10 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
CN101523611A (en) * 2006-10-04 2009-09-02 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
CN103824838A (en) 2014-05-28
CN103985694A (en) 2014-08-13

Similar Documents

Publication Publication Date Title
CN105981274B (en) Semiconductor module for electric power
KR101926854B1 (en) Semiconductor device
US20140063744A1 (en) Vertically Stacked Power FETS and Synchronous Buck Converter Having Low On-Resistance
CN103456690B (en) The manufacture method of semiconductor devices and semiconductor devices
TWI512937B (en) Flip - mounted package for integrated switching power supply and its flip - chip packaging method
CN103824853B (en) Integrated circuit module applied to switch type regulator
JP6348703B2 (en) Semiconductor device and manufacturing method thereof
JP2005302951A (en) Semiconductor device package for power
US10224474B2 (en) Wafer scale thermoelectric energy harvester having interleaved, opposing thermoelectric legs and manufacturing techniques therefor
TWI785010B (en) Connection arrangements for integrated lateral diffusion field effect transistors
EP3544168B1 (en) Circuit layout, redistribution board, module and method of fabricating a half-bridge circuit
JP2004207723A (en) Flip-chip fet element
US9472491B2 (en) Semiconductor package with small gate clip and assembly method
US9960336B2 (en) Wafer scale thermoelectric energy harvester having trenches for capture of eutectic material
TWI596728B (en) Semiconductor power device having single in-line lead module and method of making the same
WO2021261508A1 (en) Semiconductor device
TWI716075B (en) Power module
US20150348890A1 (en) Converter having partially thinned leadframe with stacked chips and interposer, free of wires and clips
KR20220046487A (en) Semiconductor module
CN104425429A (en) Semiconductor package with multi-level die block
CN105051895A (en) Insulated top side bump connection for a power device, for example for gate, source and drain contacts of a power field effect transistor
CN103985694B (en) Integrated circuit package and package assembling thereof
US10615094B2 (en) High power gallium nitride devices and structures
JP2016082040A (en) Semiconductor module
TW201601604A (en) A circuit structure and fabricating method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant