CN103985694B - Integrated circuit package and package assembling thereof - Google Patents
Integrated circuit package and package assembling thereof Download PDFInfo
- Publication number
- CN103985694B CN103985694B CN201410242479.XA CN201410242479A CN103985694B CN 103985694 B CN103985694 B CN 103985694B CN 201410242479 A CN201410242479 A CN 201410242479A CN 103985694 B CN103985694 B CN 103985694B
- Authority
- CN
- China
- Prior art keywords
- integrated circuit
- interconnecting member
- pin
- power
- power bus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
Abstract
Disclose a kind of integrated circuit package and package assembling thereof.Described integrated circuit package includes: semiconductor bare chip, and including being divided into multiple electronic devices of m group, each electronic device includes n electrode of opposed polarity, and wherein m and n is greater than the integer of 1 respectively;First insulating barrier, is positioned at the described surface of semiconductor bare chip;And i power bus, include respectively being positioned at the planar extension on the first insulating barrier and multiple vertical channel parts of each electrode through the first insulating barrier interface unit, wherein i is greater than 1 and is less than or equal to the integer of m*n, wherein, one electrode of all devices at least two electronic device group is electrically connected to each other by least one power bus in described i power bus, and each in described i power bus is connected to an external connection terminals.This integrated circuit package can avoid using the lead frame of finger-like pin, such that it is able to simplify leadframe design, and reduces interconnection resistance and improves heat radiation.
Description
Technical field
The present invention relates to semiconductor package, relate more specifically to be applied to switch type regulator
Integrated circuit package and package assembling thereof.
Background technology
Switch type regulator, such as DC-DC converter, be used for carrying to various electricity systems
For stable voltage source.In low power-supply device, (such as laptop computer, mobile phone etc.), battery management is especially
Need high efficiency DC-DC converter.Switch type regulator is converted into height input direct voltage
Voltage to frequency, is then filtered high-frequency output voltage and then is converted into VD.
Fig. 1 shows the circuit diagram of typical switch type regulator 10.This switch type regulator
Including controlled stage and power stage.Controlled stage includes control chip U1.Power stage includes power device
Q1 and Q2.Power device for example, field-effect transistor or bipolar transistor.Power device
Q1 and Q2 is connected between input voltage vin and ground GND, and its intermediate node is as outfan
Lx.The input and output electrode of control chip U1 is connected to input and output electrode IOs, its drive electrode
It is connected to the respective gate electrode of power device Q1 and Q2, is used for controlling power device Q1 and Q2
Conducting and disconnection, thus produce output electric current.
In order to meet the miniaturization of switch type regulator, low control voltage and the big need exporting electric current
Ask, multiple power devices of parallel connection can be used in switch type regulator to replace single power device.
But, the electrical connection of multiple power devices needs to use the lead frame including multiple finger-like pin, from
And additional interconnection resistance and heat dissipation problem may be introduced.
Therefore, in the integrated circuit package being applied to switch type regulator, it is desirable to improve further
The layout of power device and connected mode.
Summary of the invention
In view of this, it is an object of the invention to provide a kind of integrated circuit package and package assembling thereof,
To solve the problem that its performance is adversely affected by the electrical connection of multiple electronic devices.
According to the first aspect of the invention, it is provided that a kind of integrated circuit package, including: quasiconductor is naked
Chip, including being divided into multiple electronic devices of m group, each electronic device includes the n of opposed polarity
Individual electrode, wherein m and n is greater than the integer of 1 respectively;First insulating barrier, is positioned at quasiconductor naked
The described surface of chip;And i power bus, include respectively being positioned on the first insulating barrier
Planar extension and through multiple vertical channels of each electrode of the first insulating barrier interface unit
Part, wherein i is greater than 1 and is less than or equal to the integer of m*n, wherein, described i power supply
At least one power bus in bus is by one of all devices at least two electronic device group
Electrode is electrically connected to each other, and each in described i power bus is connected to an outside and connects
Connecting terminal.
Preferably, in described integrated circuit package, described electronic device is selected from diode, crystalline substance
At least one in body pipe, resistance, inductance.
At least one preferably, in described integrated circuit package, in described i power bus
The planar extension of the first power bus is ribbon;And in described i power bus extremely
The planar extension of a few second source bus is sinuous polyline shaped so that described at least one
The direction of current flow of individual second source bus is relative to the electricity of at least one the first power bus described
Stream flow direction changes.
Preferably, described integrated circuit package also includes: the second insulating barrier, is positioned at semiconductor bare chip
Between sheet and the first insulating barrier;And j interconnecting member, include respectively being positioned on the second insulating barrier
Planar extension and through second insulating barrier connect power device each electrode multiple vertically
Channel part, wherein, at least two interconnecting member in described j interconnecting member is respectively by one
One electrode of all devices in electronic device group is electrically connected to each other, and described i power supply is total
Described at least two interconnecting member is electrically connected to each other by least one power bus in line.
Preferably, in described integrated circuit package, the plane extension side of described i power bus
To for first direction, the plane bearing of trend of described j interconnecting member is second direction, and
One direction intersects with second direction.
Preferably, in described integrated circuit package, first direction is vertical with second direction.
At least one preferably, in described integrated circuit package, in described j interconnecting member
It is segmentation, and at least one in described i power bus is by the difference of segmentation interconnecting member
Section is electrically connected.
At least one preferably, in described integrated circuit package, in described i power bus
It it is segmentation.
Segmentation power supply preferably, in described integrated circuit package, in described i power bus
The plane of the segmentation interconnecting member in the plane bearing of trend of bus, with described j interconnecting member is prolonged
Stretch direction vertical so that in the direction of current flow in Segmented electrical source bus and segmentation interconnecting member
Direction of current flow is vertical.
At least one preferably, in described integrated circuit package, in described j interconnecting member
The different sections of Segmented electrical source bus are electrically connected.
Preferably, described integrated circuit package also includes lead frame, described lead frame just Segmented electrical
At least two difference section of source bus is electrically connected.
Preferably, in described integrated circuit package, described electronic device is field-effect transistor,
The electrode of described field-effect transistor includes source electrode, drain and gate.
Preferably, described integrated circuit package also includes lead frame, wherein said i power bus
It is connected to described lead frame.
According to the second aspect of the invention, it is provided that a kind of integrated circuit being applied to switch type regulator
Assembly, including semiconductor bare chip, including being divided into multiple power devices of two groups, each power
Device is included on the surface of semiconductor bare chip the first electrode and the second electrode exposed;First is exhausted
Edge layer, is positioned at the described surface of semiconductor bare chip;And first to the 3rd power bus,
Include respectively being positioned at the planar extension on the first insulating barrier and connecting power through the first insulating barrier
Multiple vertical channel parts of each electrode of device, wherein, the first power bus is by first group of merit
First electrode of rate device is electrically connected to each other, and second source bus is by the second of first group of power device
First electrode of electrode and second group of power device is electrically connected to each other, and the 3rd power bus is by second
Second electrode of group power device is electrically connected to each other, and each in the first to the 3rd power bus
Individual it is connected to an external connection terminals.
Preferably, in described integrated circuit package, first and the 3rd power bus plane extend
Part is in ribbon;And the planar extension of second source bus is sinuous polyline shaped, make
Second source bus direction of current flow relative to first and the 3rd power bus electric current flowing
Direction changes.
Preferably, described integrated circuit package also includes: the second insulating barrier, is positioned at semiconductor bare chip
Between sheet and the first insulating barrier;And first to fourth interconnecting member, include being positioned at second respectively exhausted
Planar extension in edge layer and to connect each electrode of power device through the second insulating barrier many
Individual vertical channel part, wherein, the first interconnecting member by the first electrode of first group of power device that
This electrical connection, the second electrode of first group of power device is electrically connected to each other by the second interconnecting member, the
First electrode of second group of power device is electrically connected to each other by three interconnecting members, and the 4th interconnecting member will
Second electrode of second group of power device is electrically connected to each other, and the first power bus to connect first mutual
Even parts, second source bus connects second and the 3rd interconnecting member, and the 3rd power bus connects the
Four interconnecting members.
Preferably, in described integrated circuit package, the plane of the first to the 3rd power bus extends
Direction is first direction, and the plane bearing of trend of first to fourth interconnecting member is second direction, and
And first direction intersects with second direction.
Preferably, in described integrated circuit package, first direction is vertical with second direction.
Preferably, in described integrated circuit package, at least one of first to fourth interconnecting member
It is segmentation, and the different sections of segmentation interconnecting member are connected electrically in by the first to the 3rd power bus
Together.
Preferably, in described integrated circuit package, at least in the first to the 3rd power bus
Individual is segmentation.
Preferably, in described integrated circuit package, the second interconnecting member, the 3rd interconnecting member and
Second source bus is segmentation, every section and every section of the 3rd interconnecting member of the second interconnecting member
Stagger, and every section of bearing of trend of second source bus and the second interconnecting member, the 3rd interconnection
Every section of bearing of trend in part is vertical so that the electric current in the second interconnecting member, the 3rd interconnecting member
Flow direction is vertical with the direction of current flow in second source bus.
Preferably, in described integrated circuit package, described first to fourth interconnecting member is by segmentation
The different sections of power bus are electrically connected.
Preferably, described integrated circuit package also includes lead frame, and described lead frame is by segmentation
The different sections of power bus are electrically connected.
Preferably, in described integrated circuit package, described power device is field-effect transistor,
Described first electrode is source electrode and in drain electrode of field-effect transistor, and described second electrode is
The source electrode of field-effect transistor and drain electrode in another.
Preferably, described integrated circuit package also includes lead frame, wherein said first to the 3rd electricity
Source bus is connected to described lead frame.
According to the third aspect of the invention we, it is provided that a kind of package assembling, including above-mentioned integrated electricity
Road assembly;Lead frame, including multiple pins, described integrated circuit package is arranged on described lead frame
On;And encapsulating compound, described encapsulating compound covers described integrated circuit package, and also covers described
Lead frame at least some of so that the respective part of the plurality of pin is exposed for external electrical
Connect.
Preferably, in described package assembling, described integrated circuit package includes conductive projection, and
And described conductive projection is formed welding flux interconnected with the upper surface of described pin.
Preferably, in described package assembling, described pin include the first thickness Part I and
The Part II of the second thickness, wherein the second thickness is more than the first thickness so that the of described pin
A part is included in encapsulating compound, and the end of the Part II of described pin and/or lower surface expose to be used
In external electrical connections.
Preferably, in described package assembling, the bottom of described package assembling includes four bottom sides
Limit, at least one pin in wherein said pin includes two or more Part II, thus
Form multiple external contact.
Preferably, in described package assembling, at least one of at least one pin described second
Dividing the bottom zone line being positioned at package assembling, at least another Part II is positioned at package assembling
Bottom side edges.
Preferably, in described package assembling, at least one pin described connects inside package assembling
It is connected to one article of power bus in described first to the 3rd power bus.
Preferably, in described package assembling, at least in described first to the 3rd power bus
Individual is segmentation, and at least one pin in described pin is by the difference of the power bus of segmentation
Section links together, thus forms public external contact.
Preferably, described package assembling also includes: include the control chip of multiple input and output electrode,
Wherein, the bottom of described package assembling has side bottom first to fourth, the plurality of pin bag
Include first group of pin for power bus and second group of pin for control chip, the first electricity
The first pin in source bus and first group of pin is connected, and what described first pin included is positioned at first
Multiple Part II of bottom side;Second source bus and the second pin phase in first group of pin
Even, described second pin includes laying respectively at multiple Part II of side bottom second and the 3rd;The
The 3rd pin in three power bus and first group of pin is connected, and described 3rd pin includes position respectively
Side and multiple Part II of bottom zone line bottom second and the 3rd;And described control
The plurality of input and output electrode of coremaking sheet is respectively connecting to the multiple pins in second group of pin,
The plurality of pin in described second group of pin includes laying respectively at side bottom the second to the 4th
Part II.
Preferably, in described package assembling, the plurality of pin is side and the 4th bottom first
The quantity of the external contact formed on the side of bottom is identical, and side and the 3rd end bottom second
The quantity of the external contact formed on portion's side is identical.
Preferably, in described package assembling, the plurality of Part II of described first pin carries
In voltage supplied signal terminal Vin and ground terminal GND one, described 3rd pin described
Multiple Part II provide another in voltage signal terminal Vin and ground terminal GND, institute
State the plurality of Part II switching node signal terminal LX of the second pin.
According to the integrated circuit package of the present invention, lead frame is not necessarily referring to power device group design complexity
The finger-like pin of layout, such that it is able to simplify the design of lead frame.Even if the merit in power device group
Rate number of devices changes, it would however also be possible to employ the lead frame of same size, such that it is able to realize lead frame
Standardization.Further, above-mentioned power bus can and lead frame between realize large area and connect
Touch, such that it is able to reduce interconnection resistance and improve radiating effect.
In a preferred embodiment, power bus and optional interconnecting member can be segmentations, from
And be possible not only to improve layout freedom, and stress can be reduced.
In a preferred embodiment, power bus and optional interconnecting member can change electric current flowing
Direction, thus reduce stray inductance, improve electrical property.
Accompanying drawing explanation
By description to the embodiment of the present invention referring to the drawings, the present invention above-mentioned and other
Objects, features and advantages will be apparent from, in the accompanying drawings:
Fig. 1 shows the circuit diagram of typical switch type regulator;
Fig. 2 a, 2b and 2c are shown respectively and are applied to switching mode according to the first embodiment of the present invention
The perspective view of the integrated circuit package of actuator and the sectional view intercepted along different directions;
Fig. 3 a, 3b and 3c be shown respectively according to the second embodiment of the present invention be applied to switching mode
The perspective view of the integrated circuit package of actuator and the sectional view intercepted along different directions;
Fig. 4 a, 4b and 4c be shown respectively according to the third embodiment of the invention be applied to switching mode
The perspective view of the integrated circuit package of actuator and the sectional view intercepted along different directions;
Fig. 5 a, 5b and 5c be shown respectively according to the fourth embodiment of the invention be applied to switching mode
The decomposition diagram of the integrated circuit package of actuator and the sectional view intercepted along different directions;
Fig. 6 a, 6b, 6c and 6d are shown respectively being applied to out according to the fourth embodiment of the invention
The decomposition diagram of the integrated circuit package of pass type actuator and the sectional view intercepted along different directions;
And
Fig. 7 a, 7b, 7c and 7d are shown respectively being applied to out according to the fifth embodiment of the invention
The sectional view of the decomposition diagram of package assembling, bottom view and the diverse location of pass type actuator;With
And
Fig. 8 a, 8b, 8c, 8d and 8e are shown respectively application according to the sixth embodiment of the invention
Sectional view in the decomposition diagram of package assembling, bottom view and the diverse location of switch type regulator.
Detailed description of the invention
It is more fully described various embodiments of the present invention hereinafter with reference to accompanying drawing.In various figures,
Identical element uses same or similar reference to represent.
For the sake of clarity, the various piece in accompanying drawing is not necessarily to scale.For brevity,
The modular construction that can obtain after several steps described in the width figure.Furthermore, it is also possible to save
Slightly details known to some, such as, the most not shown solder, encapsulating compound, for
The backing material of support lead frame and/or external frame.
Should be appreciated that when describing modular construction, when by one layer, a region is referred to as being positioned at another
When layer, another region " above " or " top ", can refer to be located immediately at another floor, another district
Above territory, or itself and another layer, also comprise other layer or region between another region.
Further, if device is overturn, this layer, region will be located in another layer, another region " under
Face " or " lower section ".If being located immediately at another layer, another region above scenario to describe,
Herein will use " directly exist ... above " or " ... adjoin above and therewith " form of presentation.
Describe hereinafter the knot of the many specific details, such as integrated circuit package of the present invention
Structure, material, size, process technique and technology, in order to be more clearly understood that the disclosure.But as
Those skilled in the art it will be appreciated that as, can not realize according to these specific details
The disclosure.
Fig. 2 a, 2b and 2c are shown respectively and are applied to switching mode according to the first embodiment of the present invention
The perspective view of the integrated circuit package 100 of actuator, and cutting of intercepting of AA along the line and line BB
Face figure.As shown in Figure 2 a, line AA is across the first electrode of the power switch of difference group and the second electricity
Pole, line BB is across the first electrode of all power switch of same group of power switch.
Integrated circuit package 100 includes semiconductor bare chip 110.In semiconductor bare chip 110
At least define two power device groups and/or optional control chip.Each power device group includes
The multiple power devices being connected in parallel.Each power device is included in of semiconductor bare chip
The first electrode exposed on surface and the second electrode, and it is positioned at this surface or relative with this surface
Control electrode on another surface.In each power device, the first electrode, the second electrode and control
Electrode processed is electrically isolated from one.In figures in the following, control electrode is not described for brevity.
Power device is e.g. selected from bipolar transistor and the one of field-effect transistor.Bipolar
When property transistor, the first electrode of power device is one in emitter and collector,
Second electrode is another in emitter and collector, and controlling electrode is base stage.Scene effect is brilliant
When body pipe, the first electrode of power device is in source electrode and drain electrode, the second electrode
Be source electrode and leakage in another, control electrode be grid.
In this embodiment, integrated circuit package 100 includes 2 power device groups, each power
Device group includes 3 power devices, thus forms the array of 2 × 3 power devices.Substitute
In embodiment, each power device group can include 2 or more power device.First power
One power device of device group and a corresponding power device of the second power device group form a line.
Such as, a power device of the first power device group includes the first electrode 111-1a and the second electrode
111-2a, a power device of the second power device group includes the first electrode 112-1a and second electricity
Pole 112-2a, and the of the first electrode 112-1a of a power device and another power device
Two electrode 111-2a are adjacent, as shown in Figure 2 b.3 power device rows of the first power device group
In a row, 3 power devices of the second power device group line up another row, thus form power device
The array of part.Such as, 3 power devices of the first power device group the second electrode 111-2a,
111-2b and 111-2c is adjacent one another are, as shown in Figure 2 c.
Integrated circuit package 100 also include the first insulating barrier 115 and for external electrical connections
One power bus 116a, second source bus 116b and the 3rd power bus 116c.First insulation
Layer 115 is such as made up of silicon oxide, is positioned on the surface of semiconductor bare chip 110.First power supply
Bus 116a, second source bus 116b and the 3rd power bus 116c are such as made up of aluminum or copper,
Include respectively being positioned at the planar extension on the first insulating barrier 115 and through the first insulating barrier 115
Multiple vertical channel parts of the electrode of contact power device.The respective plane of above-mentioned power bus is prolonged
Extending portion divides for example, ribbon and parallel to each other.First power bus 116a and first power device
First electrode electrical connection of each power device in group.Second source bus 116b and first
Every in second electrode of each power device in power device group and second power device group
First electrode electrical connection of one power device.3rd power bus 116c and second power device
Second electrode electrical connection of each power device in group.
In order to provide external electrical connections, the first power bus 116a, second source bus 116b and
Can be connected via conductive projection and/or soldered ball between 3rd power bus 116c and lead frame.?
In switch type regulator, the first power bus 116a is connected to voltage signal terminal Vin, the second electricity
Source bus 116b is connected to switching node signal terminal LX, and the 3rd power bus 116c is connected to connect
Ground terminal GND.
In above-mentioned integrated circuit package 100, owing to using the first to the 3rd power bus, draw
Wire frame is not necessarily referring to the finger-like pin of power device group design complex topology, such that it is able to simplify lead-in wire
The design of frame.Even if the power device quantity in power device group changes, it would however also be possible to employ identical rule
The lead frame of lattice, such that it is able to realize the standardization of lead frame.Further, above-mentioned power supply is total
Line can and lead frame between realize bump contact, such that it is able to reduce interconnection resistance and improve dissipate
Thermal effect.
Fig. 3 a, 3b and 3c be shown respectively according to the second embodiment of the present invention be applied to switching mode
The perspective view of the integrated circuit package 200 of actuator, and cutting of intercepting of AA along the line and line BB
Face figure.As shown in Figure 3 a, line AA is across the first electrode of the power switch of difference group and the second electricity
Pole, line BB is across the first electrode of all power switch of same group of power switch.
Integrated circuit package 200 includes the first insulating barrier 215 and for the first of external electrical connections
Power bus 216a, second source bus 216b and the 3rd power bus 216c.First insulating barrier
215 are such as made up of silicon oxide, are positioned on the surface of semiconductor bare chip 210.First power supply is total
Line 216a, second source bus 216b and the 3rd power bus 216c are such as made up of aluminum or copper,
Include respectively being positioned at the planar extension on the first insulating barrier 215 and through the first insulating barrier 215
Multiple vertical channel parts of the electrode of contact power device.First power bus 216a and first
First electrode electrical connection of each power device in power device group.Second source bus 216b
The second electrode and second power device with each power device in first power device group
First electrode electrical connection of each power device in group.3rd power bus 216c and second
Second electrode electrical connection of each power device in power device group.
In order to provide external electrical connections, the first power bus 216a, second source bus 216b and
Can be connected via conductive projection and/or soldered ball between 3rd power bus 216c and lead frame.?
In switch type regulator, the first power bus 216a is connected to voltage signal terminal Vin, the second electricity
Source bus 216b is connected to switching node signal terminal LX, and the 3rd power bus 216c is connected to connect
Ground terminal GND.
Second embodiment is with the difference of first embodiment: in integrated circuit package 200,
The planar extension of second source bus 216b is sinuous polyline shaped.According to the second embodiment
Other parts of integrated circuit package 200 and the integrated circuit package 100 according to first embodiment
Appropriate section is identical.
Above-mentioned according in the integrated circuit package 200 of the second embodiment, relative to adjacent first
Power bus 216a and the 3rd power bus 216b, electric current is along the stream of second source bus 216b
Dynamic direction is the most almost parallel, the most substantially vertical.Therefore, integrated circuit package 200 is further
Reduce stray inductance, improve the electrical property of integrated circuit package.
Fig. 4 a, 4b and 4c be shown respectively according to the third embodiment of the invention be applied to switching mode
The perspective view of the integrated circuit package 300 of actuator, and cutting of intercepting of AA along the line and line BB
Face figure.As shown in fig. 4 a, line AA is across the first electrode of the power switch of difference group and the second electricity
Pole, line BB is across the first electrode of all power switch of same group of power switch.
Integrated circuit package 300 includes the first insulating barrier 313 and electrically connect first for interlayer
Interconnecting member 314a, the second interconnecting member 314b, the 3rd interconnecting member 314c and the 4th interconnection
Part 314d.First insulating barrier 313 is such as made up of silicon oxide, is positioned at semiconductor bare chip 310
On surface.First interconnecting member 314a, the second interconnecting member 314b, the 3rd interconnecting member 314c
Such as it is made up of aluminum or copper with the 4th interconnecting member 314d, includes respectively being positioned at the first insulating barrier 313
On planar extension with through the first insulating barrier 313 contact power device electrode multiple hang down
Straight passage portion.
The respective planar extension for example, ribbon of above-mentioned interconnecting member and parallel to each other.First
First electrode electricity of each power device in interconnecting member 314a and first power device group
Connect.Of each power device in second interconnecting member 314b and first power device group
Two electrode electrical connections.Each power in 3rd interconnecting member 314c and second power device group
First electrode electrical connection of device.Every in 4th interconnecting member 314d and second power device group
Second electrode electrical connection of one power device.
Integrated circuit package 300 also include the second insulating barrier 315 and for external electrical connections
One power bus 316a, second source bus 316b and the 3rd power bus 316c.Second insulation
Layer 315 is such as made up of silicon oxide, is positioned on the surface of the first insulating barrier 313.First power supply is total
Line 316a, second source bus 316b and the 3rd power bus 316c are such as made up of aluminum or copper,
Include respectively being positioned at the planar extension on the second insulating barrier 315 and through the second insulating barrier 315
Contact the first interconnecting member 314a, the second interconnecting member 314b, the 3rd interconnecting member 314c and
Multiple vertical channel parts of at least one interconnecting member in four interconnecting member 314d.
The respective planar extension for example, ribbon of above-mentioned power bus and parallel to each other.Power supply
The bearing of trend of the planar extension of bus intersects with the bearing of trend of the extension of interconnecting member.
Preferably, the extension of the bearing of trend of the planar extension of power bus and interconnecting member
Bearing of trend is perpendicular to one another.First power bus 316a and the first interconnecting member 314a electrical connection.
Second source bus 316b and the second interconnecting member 314b and the 3rd interconnecting member 314c all electrically connect.
3rd power bus 316c and the 4th interconnecting member 314a electrical connection.
In order to provide external electrical connections, the first power bus 316a, second source bus 316b and
Can be connected via conductive projection and/or soldered ball between 3rd power bus 316c and lead frame.?
In switch type regulator, the first power bus 316a is connected to voltage signal terminal Vin, the second electricity
Source bus 316b is connected to switching node signal terminal LX, and the 3rd power bus 316c is connected to connect
Ground terminal GND.
3rd embodiment is with the difference of first embodiment: in integrated circuit package 300,
First power bus 316a, second source bus 316b and the 3rd power bus 316c are via first
Interconnecting member 314a, the second interconnecting member 314b, the 3rd interconnecting member 314c and the 4th interconnection
Part 314 is connected to each electrode of power device.Integrated circuit package 300 according to the 3rd embodiment
Other parts identical with the appropriate section of the integrated circuit package 100 according to first embodiment.
In the above-mentioned integrated circuit package 300 according to the 3rd embodiment, though first power device
A power device in part group and the corresponding power device in second power device group are spaced apart
Certain distance, or centre arranges other elements, it is also possible to utilize interconnecting member first to interconnect identical
All power devices of group, then utilize power bus to realize external connection.Therefore, integrated circuit
Assembly 300 further provides the layout freedom of power device.
Fig. 5 a, 5b and 5c be shown respectively according to the fourth embodiment of the invention be applied to switching mode
The decomposition diagram of the integrated circuit package 400 of actuator, and AA and line BB intercepting along the line
Sectional view.As shown in Figure 5 a, line AA is across first electrode and of the power switch of difference group
Two electrodes, line BB is across the first electrode of all power switch of same group of power switch.
Integrated circuit package 400 includes the first insulating barrier 413 and electrically connect first for interlayer
Interconnecting member 414a, the second interconnecting member 414b, the 3rd interconnecting member 414c and the 4th interconnection
Part 414d.First insulating barrier 413 is such as made up of silicon oxide, is positioned at semiconductor bare chip 410
On surface.First interconnecting member 414a, the second interconnecting member 414b, the 3rd interconnecting member 414c
Such as it is made up of aluminum or copper with the 4th interconnecting member 414d, includes respectively being positioned at the first insulating barrier 413
On planar extension with through the first insulating barrier 413 contact power device electrode multiple hang down
Straight passage portion.
The respective planar extension for example, ribbon of above-mentioned interconnecting member and parallel to each other.First
First electrode electricity of each power device in interconnecting member 414a and first power device group
Connect.Of each power device in second interconnecting member 414b and first power device group
Two electrode electrical connections.Each power in 3rd interconnecting member 414c and second power device group
First electrode electrical connection of device.Every in 4th interconnecting member 414d and second power device group
Second electrode electrical connection of one power device.
Integrated circuit package 400 includes the second insulating barrier 415 and for the first of external electrical connections
Power bus 416a, second source bus 416b and the 3rd power bus 416c.Second insulating barrier
415 are such as made up of silicon oxide, are positioned on the surface of the first insulating barrier 413.First power bus
416a, second source bus 416b and the 3rd power bus 416c are such as made up of aluminum or copper, point
Do not include being positioned at the planar extension on the second insulating barrier 415 and connecing through the second insulating barrier 415
Touch the first interconnecting member 414a, the second interconnecting member 414b, the 3rd interconnecting member 414c and the 4th
Multiple vertical channel parts of at least one interconnecting member in interconnecting member 414d.
The respective planar extension for example, ribbon of above-mentioned power bus and parallel to each other.Power supply
The bearing of trend of the planar extension of bus is parallel with the bearing of trend of the extension of interconnecting member
Or intersect.Preferably, the prolonging of the bearing of trend of the planar extension of power bus and interconnecting member
The bearing of trend that extending portion is divided is perpendicular to one another.First power bus 416a and the first interconnecting member 414a
Electrical connection.Second source bus 416b and the second interconnecting member 414b and the 3rd interconnecting member 414c
All electrically connect.3rd power bus 416c and the 4th interconnecting member 414d electrical connection.
In order to provide external electrical connections, the first power bus 416a, second source bus 416b and
Can be connected via conductive projection and/or soldered ball between 3rd power bus 416c and lead frame.?
In switch type regulator, the first power bus 416a is connected to voltage signal terminal Vin, the second electricity
Source bus 416b is connected to switching node signal terminal LX, and the 3rd power bus 416c is connected to connect
Ground terminal GND.
4th embodiment is with the difference of the 3rd embodiment: in integrated circuit package 400,
Second interconnecting member 414b, the 3rd interconnecting member 414c and second source bus 416b are segmentation
, as illustrated in figures 5 b and 5 c.Every section and the 3rd interconnecting member 414c of second interconnecting member 414b
Every section stagger.Every section of bearing of trend of second source bus 416b and the second interconnecting member 414b,
Every section of bearing of trend in 3rd interconnecting member 414c is vertical, and connects the second interconnecting member 414b
In one section and the 3rd interconnecting member 414c in one section.Second interconnecting member 414b and the 3rd mutual
Even the different sections of second source bus 416b are linked together by parts 414c.On the other hand,
The different sections of two power bus 416b are by the second interconnecting member 414b and the 3rd interconnecting member 414c
Different sections link together.Other parts of integrated circuit package 400 according to the 4th embodiment
Identical with the appropriate section of the integrated circuit package 100 according to the 3rd embodiment.
In the above-mentioned integrated circuit package 400 according to the 4th embodiment, the power bus of segmentation and
Interconnecting member is possible not only to improve layout freedom, and can reduce stress.Additionally, second is mutual
The even direction of current flow in parts 414b, the 3rd interconnecting member 414c and second source bus 416b
In direction of current flow vertical.Total relative to the first adjacent power bus 416a and the 3rd power supply
Line 416b, electric current is along the second interconnecting member 414b, the 3rd interconnecting member 414c and second source
The flow direction of bus 416b is the most almost parallel, the most substantially vertical.Therefore, integrated circuit group
Part 400 further reduces stray inductance, improves the electrical property of integrated circuit package.
Fig. 6 a, 6b, 6c and 6d are shown respectively being applied to out according to the fifth embodiment of the invention
The decomposition diagram of the integrated circuit package 500 of pass type actuator, and AA, line B1B1 along the line
The sectional view intercepted with B2B2.As shown in Figure 6 a, line AA is across the power switch of difference group
First electrode and the second electrode, line B1B1 is across all power switch of second group of power switch
Second electrode, line B2B2 is across the second electrode of all power switch of first group of power switch.
Integrated circuit package 500 includes the first insulating barrier 513 and electrically connect first for interlayer
Interconnecting member 514a, the second interconnecting member 514b, the 3rd interconnecting member 514c and the 4th interconnection
Part 514d.First insulating barrier 513 is such as made up of silicon oxide, is positioned at semiconductor bare chip 410
On surface.First interconnecting member 514a, the second interconnecting member 514b, the 3rd interconnecting member 514c
Such as it is made up of aluminum or copper with the 4th interconnecting member 514d, includes respectively being positioned at the first insulating barrier 513
On planar extension with through the first insulating barrier 513 contact power device electrode multiple hang down
Straight passage portion.
The respective planar extension for example, ribbon of above-mentioned interconnecting member and parallel to each other.First
First electrode electricity of each power device in interconnecting member 514a and first power device group
Connect.Of each power device in second interconnecting member 514b and first power device group
Two electrode electrical connections.Each power in 3rd interconnecting member 514c and second power device group
First electrode electrical connection of device.Every in 4th interconnecting member 514d and second power device group
Second electrode electrical connection of one power device.
Integrated circuit package 500 includes the second insulating barrier 515 and for the first of external electrical connections
Power bus 516a, second source bus 516b and the 3rd power bus 516c.Second insulating barrier
515 are such as made up of silicon oxide, are positioned on the surface of the first insulating barrier 513.First power bus
516a, second source bus 516b and the 3rd power bus 516c are such as made up of aluminum or copper, point
Do not include being positioned at the planar extension on the second insulating barrier 515 and connecing through the second insulating barrier 515
Touch the first interconnecting member 514a, the second interconnecting member 514b, the 3rd interconnecting member 514c and the 4th
Multiple vertical channel parts of at least one interconnecting member in interconnecting member 514d.
The respective planar extension for example, ribbon of above-mentioned power bus and parallel to each other.Power supply
The bearing of trend of the planar extension of bus intersects with the bearing of trend of the extension of interconnecting member.
Preferably, the extension of the bearing of trend of the planar extension of power bus and interconnecting member
Bearing of trend is perpendicular to one another.First power bus 516a and the second interconnecting member 514b and the 4th mutual
Even parts 514d all electrically connects.Second source bus 516b and the 3rd interconnecting member 514c electrical connection.
3rd power bus 516c and the first interconnecting member 514a electrical connection.
In order to provide external electrical connections, the first power bus 516a, second source bus 516b and
Can be connected via conductive projection and/or soldered ball between 3rd power bus 516c and lead frame.?
In switch type regulator, a part of the first power bus 516a can be as voltage signal terminal
LX, a part for second source bus 516b can as switching node signal terminal Vin,
3rd power bus 516c is connected to ground terminal GND.
5th embodiment is with the difference of the 3rd embodiment: in integrated circuit package 500,
First interconnecting member 514a, the 3rd interconnecting member 514c and the 4th power bus 514d are segmentation
, as illustrated in figures 5 b and 5 c.First interconnecting member 514a, the 3rd interconnecting member 514c and
Every section of four power bus 514d is staggered.First power bus 516a is not only by the second interconnecting member
514b and the 4th interconnecting member 514d is electrically connected, and by the 4th interconnecting member 514d's
Different sections are electrically connected.Second source bus 516b is by the difference of the 3rd interconnecting member 514c
Section is electrically connected.3rd power bus 516c is by the different sections electricity of the first interconnecting member 514a
Link together.Other parts of integrated circuit package 500 according to the 5th embodiment with according to the
The appropriate section of the integrated circuit package 100 of three embodiments is identical.
In the above-mentioned integrated circuit package 500 according to the 5th embodiment, the interconnecting member of segmentation is not
Only can improve layout freedom, and stress can be reduced.Even if in first power device group
A power device and second power device group in corresponding power device be spaced apart a spacing
From, or centre arranges other elements, it is also possible to utilize the institute that first interconnecting member interconnects identical group
There is power device, then utilize power bus to realize external connection.Therefore, integrated circuit package 500
Further provide the layout freedom of power device.
Fig. 7 a, 7b, 7c and 7d are shown respectively being applied to out according to the fifth embodiment of the invention
The decomposition diagram of package assembling 1000 of pass type actuator, bottom view and AA along the line and line
The sectional view that BB intercepts.As shown in Figure 7b, line AA is along the length of wherein power bus
Direction extends, and across the external pin of this power bus, line BB is total along another power supply
The length direction of line extends, and across the external pin of this power bus.
As example, comprise according to the first embodiment of the present invention in package assembling 1000 is integrated
Circuit unit 100.As described above, integrated circuit package 100 include semiconductor bare chip 110,
First power bus 116a, second source bus 116b and the 3rd power bus 116c, Yi Ji
One insulating barrier 115.Inside semiconductor bare chip 110, the first power bus 116a is by first group
First electrode of power device is electrically connected to each other, and second source bus 116b is by first group of power device
The second electrode and the first electrode of second group of power device be electrically connected to each other, the 3rd power bus
Second electrode of second group of power device is electrically connected to each other by 116c.
Integrated circuit package 100 includes multiple conductive projection 118 (and/or soldered ball).In figure 7 a
For the sake of clarity, it is expressed as conductive projection 118 separating with integrated circuit package 100.But,
Should be appreciated that a part for conductive projection 118 actually integrated circuit package 100.First electricity
Each of source bus 116a, second source bus 116b and the 3rd power bus 116c with at least
One conductive projection interconnection.Integrated circuit package 100 can also include being formed together with power device
Control chip (not shown) in semiconductor bare chip 110.The input and output electrode of control chip
Interconnect with conductive projection 118 respectively.
Integrated circuit package 100 is arranged on lead frame 600.Such as, integrated circuit package 100
Conductive projection 118 formed welding flux interconnected with the upper surface of the pin of lead frame 600.Lead frame 600
Pin include Part I and the Part II of the second thickness of the first thickness, wherein first is thick
Degree is less than the second thickness.
Encapsulating compound 700 covers integrated circuit package 100, and also covers lead frame 600 at least
A part.In lead frame 600, the Part I of pin is included in encapsulating compound 700, and second
End or the lower surface of part are exposed for external electrical connections.Each pin can include two or
More Part II, thus form multiple external contact.Can by the etching of selection area or
Impressing forms Part I and the Part II of pin.
The bottom of package assembling 1000 has side bottom first to fourth.The plurality of pin includes
First group of pin for power bus and second group of pin for control chip.Such as, institute
State the quantity phase of the external contact that multiple pin is formed on side bottom side and the 4th bottom first
With, and the quantity of the external contact formed on side bottom side and the 3rd bottom second is identical.
In an example, the first pin 601a of lead frame 600 and integrated circuit package 100
The first power bus 116a be connected, the second pin 601b and integrated circuit of lead frame 600
Second source bus 116b of assembly 100 is connected, the 3rd pin 601c of lead frame 600 with
3rd power bus 116c of integrated circuit package 100 is connected.Such as, the of lead frame 600
One pin 601a provides voltage signal terminal Vin, and the second pin 601b of lead frame 600 provides
Switching node signal terminal LX, the 3rd pin 601c of lead frame 600 provide ground terminal GND.
First pin 601a includes three Part II being positioned at the first side of package assembling 1000,
Second side that second pin 601b includes laying respectively at package assembling 1000 and the 3rd side each
One Part II, the 3rd pin 601c includes the second side laying respectively at package assembling 1000
With each Part II of the 3rd side and be positioned at second in the middle of package assembling 1000
Part.
Fig. 8 a, 8b, 8c, 8d and 8e are shown respectively application according to the sixth embodiment of the invention
In the decomposition diagram of package assembling 2000 of switch type regulator, bottom view and AA along the line,
The sectional view of the diverse location that line BB and line CC intercepts.As shown in Figure 8 b, line AA, line BB
Extend respectively along the length direction of different electrical power bus with line CC, and total across corresponding power supply
The external pin of line.
As example, comprise according to the fourth embodiment of the invention in package assembling 2000 is integrated
Circuit unit 400.As described above, integrated circuit package 400 include semiconductor bare chip 410,
First power bus 416a, second source bus 416b and the 3rd power bus 416c, Yi Ji
One insulating barrier 415.Inside semiconductor bare chip 410, the first power bus 416a is by first group
First electrode of power device is electrically connected to each other, and second source bus 416b is by first group of power device
The second electrode and the first electrode of second group of power device be electrically connected to each other, the 3rd power bus
Second electrode of second group of power device is electrically connected to each other by 416c.
Integrated circuit package 400 includes multiple conductive projection 418 (and/or soldered ball).In Fig. 8 a
For the sake of clarity, it is expressed as conductive projection 418 separating with integrated circuit package 400.But,
Should be appreciated that a part for conductive projection 418 actually integrated circuit package 400.First electricity
Each of source bus 416a, second source bus 416b and the 3rd power bus 416c with at least
One conductive projection interconnection.Integrated circuit package 400 can also include being formed together with power device
Control chip (not shown) in semiconductor bare chip 410.The input and output electrode of control chip
Interconnect with conductive projection 418 respectively.
Integrated circuit package 400 is arranged on lead frame 600.Such as, integrated circuit package 400
Conductive projection 418 formed welding flux interconnected with the upper surface of the pin of lead frame 600.Lead frame 600
Pin include Part I and the Part II of the second thickness of the first thickness, wherein first is thick
Degree is less than the second thickness.
Encapsulating compound 700 covers integrated circuit package 400, and also covers lead frame 600 at least
A part.In lead frame 600, the Part I of pin is included in encapsulating compound 700, and second
End or the lower surface of part are exposed for external electrical connections.Each pin can include two or
More Part II, thus form multiple external contact.Can by the etching of selection area or
The Part I of impressing formation pin and Part II form Part I and the Part II of pin.
The bottom of package assembling 2000 has side bottom first to fourth.The plurality of pin includes
First group of pin for power bus and second group of pin for control chip.Such as, institute
State the quantity phase of the external contact that multiple pin is formed on side bottom side and the 4th bottom first
With, and the quantity of the external contact formed on side bottom side and the 3rd bottom second is identical.
In an example, the first pin 601a of lead frame 600 and integrated circuit package 400
The first power bus 416a be connected, the second pin 601b and integrated circuit of lead frame 600
Second source bus 416b of assembly 400 is connected, the 3rd pin 601c of lead frame 600 with
3rd power bus 416c of integrated circuit package 400 is connected.Such as, the of lead frame 600
One pin 601a provides voltage signal terminal Vin, and the second pin 601b of lead frame 600 provides
Switching node signal terminal LX, the 3rd pin 601c of lead frame 600 provide ground terminal GND.
See the 4th embodiment shown in Fig. 5 a, the second source bus in integrated circuit package 400
416b is segmentation.Inside integrated circuit package 400, the second interconnecting member 414b and the 3rd
The different sections of second source bus 416b are linked together by interconnecting member 414c, and with first
Second electrode electrical connection of each power device in individual power device group, thus realize the second electricity
Electrical connection between source bus 416b and power device.Outside integrated circuit package 400, lead-in wire
The different sections of second source bus 416b are linked together by the second pin 601b of frame 600, from
And provide public external electrical connections, as shown in figure 8d.
First pin 601a includes three Part II being positioned at the first side of package assembling 2000,
Second side that second pin 601b includes laying respectively at package assembling 2000 and the 3rd side each
One Part II, the 3rd pin 601c includes the second side laying respectively at package assembling 2000
With each Part II of the 3rd side and be positioned at second in the middle of package assembling 2000
Part.Other pins of lead frame 600 may be used for the control core in semiconductor bare chip 410
The electrode of sheet provides external electrical connections.
Different from the package assembling of prior art, in the package assembling 1000 and 2000 of the present invention,
Lead frame 600 is not only included at least one second of four the side exposures in bottom of package assembling
Point, and include at least another Part II, the example being positioned at the bottom zone line of package assembling
Mid portion as shown in Fig. 7 b, Fig. 8 b.This mid portion can reduce connection resistance, improves
Current carrying capacity, and can serve as heat sink pad, improve the radiating effect of package assembling.
Such as, conventional QFN encapsulation (QFN) includes the bottom being positioned at package assembling
The die pad of zone line and be positioned at multiple external connection terminals of four sides in bottom of package assembling.
At the package assembling 1000 and 2000 of the present invention when being applied to QFN, use and be positioned at package assembling
Bottom zone line Part II replace die pad.That is, in the package assembling of the present invention,
The bottom zone line of package assembling is also used as external connection terminals and heat sink pad.
In the above-described embodiments, describe and include the integrated circuit package of power device and power bus
And package assembling.
In alternate embodiments, can use in diode, transistor, resistance, inductance
At least one electronic device replace power device.
Additionally, in alternate embodiments, electronic device can be divided into m group, and each electronics
Device can include n electrode, and wherein m and n is greater than the integer of 1 respectively.First insulating barrier
It is positioned at the described surface of semiconductor bare chip.Integrated circuit package also includes i power bus,
Include respectively being positioned at the planar extension on the first insulating barrier and through the first insulating barrier interface unit
Multiple vertical channel parts of each electrode, wherein i is greater than 1 and less than or equal to m*n's
Integer.At least one power bus in described i power bus is by least two electronic device group
In an electrode of all devices be electrically connected to each other, and each in described i power bus
Individual it is connected to an external connection terminals.
It should be noted that, in this article, the relational terms of such as first and second or the like is only
It is used for separating an entity or operation with another entity or operating space, and not necessarily requires
Or imply relation or the order that there is any this reality between these entities or operation.And,
Term " includes ", " comprising " or its any other variant are intended to comprising of nonexcludability,
So that include that the process of a series of key element, method, article or equipment not only include that those are wanted
Element, but also include other key elements being not expressly set out, or also include for this process,
The key element that method, article or equipment are intrinsic.In the case of there is no more restriction, by statement
The key element that " including one ... " limits, it is not excluded that include the process of described key element, method,
Article or equipment there is also other identical element.
According to embodiments of the invention as described above, these embodiments do not have detailed descriptionthe own
Details, be also not intended to the specific embodiment that this invention is only described.Obviously, as described above,
Can make many modifications and variations.These embodiments are chosen and specifically described to this specification, be in order to
Preferably explain the principle of the present invention and actual application, so that skilled artisan's energy
The present invention and amendment on the basis of the present invention is utilized to use well.The present invention is only wanted by right
Ask the restriction of book and four corner thereof and equivalent.
Claims (31)
1. an integrated circuit package, including:
Semiconductor bare chip, including being divided into multiple electronic devices of m group, each electronic device includes
N electrode of opposed polarity, wherein m and n is greater than the integer of 1 respectively;
First insulating barrier, is positioned at the surface of semiconductor bare chip;
I power bus, includes being positioned at the planar extension on the first insulating barrier and respectively through the
Multiple vertical channel parts of each electrode of one insulating barrier interface unit, wherein i is greater than 1 also
And the integer less than or equal to m*n;
Second insulating barrier, between semiconductor bare chip and the first insulating barrier;And
J interconnecting member, includes being positioned at the planar extension on the second insulating barrier and respectively through the
Two insulating barriers connect multiple vertical channel parts of each electrode of power device,
Wherein, at least one power bus in described i power bus is by least two electronics device
One electrode of all devices in part group is electrically connected to each other, and
Each in described i power bus is connected to an external connection terminals,
Wherein, at least two interconnecting member in described j interconnecting member is respectively by an electronics device
One electrode of all devices in part group is electrically connected to each other, and
At least one power bus in described i power bus is by described at least two interconnecting member
It is electrically connected to each other.
Integrated circuit package the most according to claim 1, wherein
The planar extension of at least one the first power bus in described i power bus is bar
Banding;And
The planar extension of at least one the second source bus in described i power bus is in wriggling
The polyline shaped of Yan so that the direction of current flow of at least one second source bus described is relative to institute
The direction of current flow stating at least one the first power bus changes.
Integrated circuit package the most according to claim 1, wherein said i power bus
Plane bearing of trend is first direction, and the plane bearing of trend of described j interconnecting member is second party
To, and first direction intersects with second direction.
Integrated circuit package the most according to claim 3, wherein first direction and second direction
Vertically.
Integrated circuit package the most according to claim 1, wherein
At least one in described j interconnecting member is segmentation, and described i power bus
In at least one the different sections of segmentation interconnecting member are electrically connected.
Integrated circuit package the most according to claim 5, wherein
At least one in described i power bus is segmentation.
Integrated circuit package the most according to claim 6, wherein
The plane bearing of trend of the Segmented electrical source bus in described i power bus, with described j
The plane bearing of trend of the segmentation interconnecting member in interconnecting member is vertical so that in Segmented electrical source bus
Direction of current flow vertical with the direction of current flow in segmentation interconnecting member.
8. according to the integrated circuit package described in claim 6, wherein, described j interconnecting member
In at least one the different sections of Segmented electrical source bus are electrically connected.
9., according to the integrated circuit package described in claim 6, also include lead frame, described in draw
At least two difference section of wire frame just Segmented electrical source bus is electrically connected.
10., according to the integrated circuit package according to any one of claim 1-7, also include lead-in wire
Frame, wherein said i power bus is connected to described lead frame.
11. 1 kinds of integrated circuit packages being applied to switch type regulator, including:
Semiconductor bare chip, including being divided into multiple power devices of two groups, each power device includes
The first electrode exposed on the surface of semiconductor bare chip and the second electrode;
First insulating barrier, is positioned at the described surface of semiconductor bare chip;And
First to the 3rd power bus, includes the planar extension being positioned on the first insulating barrier respectively
With connect multiple vertical channel parts of each electrode of power device through the first insulating barrier,
Wherein, the first electrode of first group of power device is electrically connected to each other by the first power bus, the
Two power bus are by the second electrode of first group of power device and the first electricity of second group of power device
Pole is electrically connected to each other, and the second electrode of second group of power device is electrically connected to each other by the 3rd power bus,
And
Each in first to the 3rd power bus is connected to an external connection terminals.
12. integrated circuit packages according to claim 11, wherein
First and the 3rd the planar extension of power bus be ribbon;And
The planar extension of second source bus is sinuous polyline shaped so that second source bus
Direction of current flow relative to first and the 3rd power bus direction of current flow change.
13. integrated circuit packages according to claim 11, also include:
Second insulating barrier, between semiconductor bare chip and the first insulating barrier;And
First to fourth interconnecting member, includes the planar extension being positioned on the second insulating barrier respectively
With connect multiple vertical channel parts of each electrode of power device through the second insulating barrier,
Wherein, the first electrode of first group of power device is electrically connected to each other by the first interconnecting member, the
Second electrode of first group of power device is electrically connected to each other by two interconnecting members, and the 3rd interconnecting member will
First electrode of second group of power device is electrically connected to each other, and the 4th interconnecting member is by second group of power device
Second electrode of part is electrically connected to each other, and
First power bus connects the first interconnecting member, and second source bus connection second and the 3rd is mutual
Even parts, the 3rd power bus connects the 4th interconnecting member.
14. integrated circuit packages according to claim 13, wherein the first to the 3rd power supply is total
The plane bearing of trend of line is first direction, and the plane bearing of trend of first to fourth interconnecting member is
Second direction, and first direction intersects with second direction.
15. integrated circuit packages according to claim 13, wherein first direction and second party
To vertically.
16. integrated circuit packages according to claim 13, wherein
At least one of first to fourth interconnecting member is segmentation, and the first to the 3rd power supply is total
The different sections of segmentation interconnecting member are electrically connected by line.
17. integrated circuit packages according to claim 16, wherein
At least one in first to the 3rd power bus is segmentation.
18. integrated circuit packages according to claim 17, wherein
Second interconnecting member, the 3rd interconnecting member and second source bus are segmentation, and second is mutual
Even every section of parts is staggered with every section of the 3rd interconnecting member, and every section of second source bus prolongs
Stretch direction vertical with every section of bearing of trend in the second interconnecting member, the 3rd interconnecting member so that the
Direction of current flow in two interconnecting members, the 3rd interconnecting member and the electric current in second source bus
Flow direction is vertical.
19. integrated circuit packages according to claim 17, wherein, described first to fourth
The different sections of Segmented electrical source bus are electrically connected by interconnecting member.
20. integrated circuit packages according to claim 17, also include lead frame, and institute
State lead frame the different sections of Segmented electrical source bus to be electrically connected.
21. according to the integrated circuit package according to any one of claim 11-18, also includes drawing
Wire frame, wherein said first to the 3rd power bus is connected to described lead frame.
22. 1 kinds of package assemblings, including:
According to the integrated circuit package according to any one of claim 11-21;
Lead frame, including multiple pins, described integrated circuit package is arranged on described lead frame;
And
Encapsulating compound, described encapsulating compound covers described integrated circuit package, and also covers described lead-in wire
Frame at least some of so that the respective part of the plurality of pin is exposed for external electrical connections.
23. package assemblings according to claim 22, wherein, described integrated circuit package
Including conductive projection, and described conductive projection is formed welding flux interconnected with the upper surface of described pin.
24. package assemblings according to claim 23, wherein, described pin includes that first is thick
The Part I of degree and the Part II of the second thickness, wherein the second thickness is more than the first thickness, makes
The Part I of described pin is included in encapsulating compound, the end of the Part II of described pin and/
Or lower surface is exposed for external electrical connections.
25. package assemblings according to claim 24, the bottom of described package assembling includes four
Individual bottom side, at least one pin in wherein said pin includes two or more second
Point, thus form multiple external contact.
26. package assemblings according to claim 25, at least one pin wherein said is extremely
A few Part II is positioned at the bottom zone line of package assembling, at least another Part II position
Bottom side edges in package assembling.
27. package assemblings according to claim 25, at least one pin wherein said is in envelope
Arrangement is connected internally to one article of power bus in described first to the 3rd power bus.
28. package assemblings according to claim 24, wherein said first to the 3rd power supply is total
At least one in line is segmentation, and at least one pin in described pin is by the electricity of segmentation
The different sections of source bus link together, thus form public external contact.
29. package assemblings according to claim 24, also include:
Including the control chip of multiple input and output electrodes,
Wherein, the bottom of described package assembling has a side bottom first to fourth, the plurality of draws
Foot includes first group of pin for power bus and second group of pin for control chip,
The first pin in first power bus and first group of pin is connected, and described first pin includes
Be positioned at multiple Part II of side bottom first;
Second source bus is connected with the second pin in first group of pin, and described second pin includes
Lay respectively at multiple Part II of side bottom second and the 3rd;
The 3rd pin in 3rd power bus and first group of pin is connected, and described 3rd pin includes
Lay respectively at side and multiple Part II of bottom zone line bottom second and the 3rd;And
The plurality of input and output electrode of described control chip is respectively connecting in second group of pin
Multiple pins, the plurality of pin in described second group of pin includes laying respectively at second to the 4th
The Part II of bottom side.
30. package assemblings according to claim 29, wherein, the plurality of pin is first
The quantity of the external contact formed on side bottom the side and the 4th of bottom is identical, and at second end
The quantity of the external contact formed on side bottom portion's side and the 3rd is identical.
31. package assemblings according to claim 29, wherein, described first pin described
Multiple Part II provide in voltage signal terminal and ground terminal, described 3rd pin
The plurality of Part II provides another in voltage signal terminal and ground terminal, and described second
The plurality of Part II switching node signal terminal of pin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410242479.XA CN103985694B (en) | 2014-03-06 | 2014-05-30 | Integrated circuit package and package assembling thereof |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2014100804332 | 2014-03-06 | ||
CN201410080433.2A CN103824838A (en) | 2014-03-06 | 2014-03-06 | Integrated circuit module |
CN201410080433.2 | 2014-03-06 | ||
CN201410242479.XA CN103985694B (en) | 2014-03-06 | 2014-05-30 | Integrated circuit package and package assembling thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103985694A CN103985694A (en) | 2014-08-13 |
CN103985694B true CN103985694B (en) | 2016-11-02 |
Family
ID=50759815
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410080433.2A Pending CN103824838A (en) | 2014-03-06 | 2014-03-06 | Integrated circuit module |
CN201410242479.XA Active CN103985694B (en) | 2014-03-06 | 2014-05-30 | Integrated circuit package and package assembling thereof |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410080433.2A Pending CN103824838A (en) | 2014-03-06 | 2014-03-06 | Integrated circuit module |
Country Status (1)
Country | Link |
---|---|
CN (2) | CN103824838A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108807316B (en) * | 2017-08-14 | 2020-07-10 | 苏州捷芯威半导体有限公司 | Semiconductor packaging structure and semiconductor device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07142480A (en) * | 1993-11-17 | 1995-06-02 | Hitachi Ltd | Semiconductor integrated circuit device and fabrication thereof |
US5789811A (en) * | 1994-01-25 | 1998-08-04 | Lsi Logic Corporation | Surface mount peripheral leaded and ball grid array package |
CN1893094A (en) * | 2005-06-30 | 2007-01-10 | 株式会社半导体能源研究所 | Semiconductor device and manufacturing method thereof |
CN101523611A (en) * | 2006-10-04 | 2009-09-02 | 株式会社半导体能源研究所 | Semiconductor device and manufacturing method thereof |
-
2014
- 2014-03-06 CN CN201410080433.2A patent/CN103824838A/en active Pending
- 2014-05-30 CN CN201410242479.XA patent/CN103985694B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07142480A (en) * | 1993-11-17 | 1995-06-02 | Hitachi Ltd | Semiconductor integrated circuit device and fabrication thereof |
US5789811A (en) * | 1994-01-25 | 1998-08-04 | Lsi Logic Corporation | Surface mount peripheral leaded and ball grid array package |
CN1893094A (en) * | 2005-06-30 | 2007-01-10 | 株式会社半导体能源研究所 | Semiconductor device and manufacturing method thereof |
CN101523611A (en) * | 2006-10-04 | 2009-09-02 | 株式会社半导体能源研究所 | Semiconductor device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN103824838A (en) | 2014-05-28 |
CN103985694A (en) | 2014-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105981274B (en) | Semiconductor module for electric power | |
KR101926854B1 (en) | Semiconductor device | |
US20140063744A1 (en) | Vertically Stacked Power FETS and Synchronous Buck Converter Having Low On-Resistance | |
CN103456690B (en) | The manufacture method of semiconductor devices and semiconductor devices | |
TWI512937B (en) | Flip - mounted package for integrated switching power supply and its flip - chip packaging method | |
CN103824853B (en) | Integrated circuit module applied to switch type regulator | |
JP6348703B2 (en) | Semiconductor device and manufacturing method thereof | |
JP2005302951A (en) | Semiconductor device package for power | |
US10224474B2 (en) | Wafer scale thermoelectric energy harvester having interleaved, opposing thermoelectric legs and manufacturing techniques therefor | |
TWI785010B (en) | Connection arrangements for integrated lateral diffusion field effect transistors | |
EP3544168B1 (en) | Circuit layout, redistribution board, module and method of fabricating a half-bridge circuit | |
JP2004207723A (en) | Flip-chip fet element | |
US9472491B2 (en) | Semiconductor package with small gate clip and assembly method | |
US9960336B2 (en) | Wafer scale thermoelectric energy harvester having trenches for capture of eutectic material | |
TWI596728B (en) | Semiconductor power device having single in-line lead module and method of making the same | |
WO2021261508A1 (en) | Semiconductor device | |
TWI716075B (en) | Power module | |
US20150348890A1 (en) | Converter having partially thinned leadframe with stacked chips and interposer, free of wires and clips | |
KR20220046487A (en) | Semiconductor module | |
CN104425429A (en) | Semiconductor package with multi-level die block | |
CN105051895A (en) | Insulated top side bump connection for a power device, for example for gate, source and drain contacts of a power field effect transistor | |
CN103985694B (en) | Integrated circuit package and package assembling thereof | |
US10615094B2 (en) | High power gallium nitride devices and structures | |
JP2016082040A (en) | Semiconductor module | |
TW201601604A (en) | A circuit structure and fabricating method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |