CN103975450B - 指叉型背接触太阳能电池及其处理基板的方法 - Google Patents

指叉型背接触太阳能电池及其处理基板的方法 Download PDF

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Publication number
CN103975450B
CN103975450B CN201280059584.9A CN201280059584A CN103975450B CN 103975450 B CN103975450 B CN 103975450B CN 201280059584 A CN201280059584 A CN 201280059584A CN 103975450 B CN103975450 B CN 103975450B
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CN
China
Prior art keywords
substrate
type
mask
type dopant
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280059584.9A
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English (en)
Chinese (zh)
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CN103975450A (zh
Inventor
约翰·W·葛拉夫
班杰明·B·里欧登
尼可拉斯·P·T·贝特曼
约瑟·C·欧尔森
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication date
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Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN103975450A publication Critical patent/CN103975450A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN201280059584.9A 2011-10-11 2012-10-08 指叉型背接触太阳能电池及其处理基板的方法 Expired - Fee Related CN103975450B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/270,290 2011-10-11
US13/270,290 US9190548B2 (en) 2011-10-11 2011-10-11 Method of creating two dimensional doping patterns in solar cells
PCT/US2012/059238 WO2013055627A1 (en) 2011-10-11 2012-10-08 Method of creating two dimensional doping patterns in solar cells

Publications (2)

Publication Number Publication Date
CN103975450A CN103975450A (zh) 2014-08-06
CN103975450B true CN103975450B (zh) 2016-06-22

Family

ID=47080834

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280059584.9A Expired - Fee Related CN103975450B (zh) 2011-10-11 2012-10-08 指叉型背接触太阳能电池及其处理基板的方法

Country Status (6)

Country Link
US (1) US9190548B2 (https=)
JP (1) JP6031112B2 (https=)
KR (1) KR101919514B1 (https=)
CN (1) CN103975450B (https=)
TW (1) TWI560894B (https=)
WO (1) WO2013055627A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2988908B1 (fr) * 2012-04-03 2015-03-27 Commissariat Energie Atomique Procede de fabrication d'une cellule photovoltaique a contacts interdigites en face arriere
TWI643351B (zh) * 2013-01-31 2018-12-01 澳洲商新南創新有限公司 太陽能電池金屬化及互連方法
CN104425651B (zh) * 2013-09-09 2016-08-10 上海理想万里晖薄膜设备有限公司 一种低温制备正面无栅极的异质结太阳电池的工艺
TWM477049U (en) * 2013-09-25 2014-04-21 Inventec Solar Energy Corp Back contact electrode solar cell
US9401450B2 (en) * 2013-12-09 2016-07-26 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US20150280043A1 (en) * 2014-03-27 2015-10-01 David D. Smith Solar cell with trench-free emitter regions
CN104253169B (zh) * 2014-09-28 2016-09-07 泰州中来光电科技有限公司 无主栅、高效率背接触太阳能电池模块、组件及制备工艺
TWI596786B (zh) * 2015-12-03 2017-08-21 茂迪股份有限公司 背接觸太陽能電池及其製造方法
CN110010719B (zh) * 2018-01-05 2021-02-19 上海凯世通半导体股份有限公司 掺杂方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
WO2011049950A1 (en) * 2009-10-19 2011-04-28 Varian Semiconductor Equipment Associates, Inc. Stepped masking for patterned implantation
CN102203955A (zh) * 2008-11-20 2011-09-28 瓦里安半导体设备公司 制造太阳能电池的技术

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US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
JP2003297718A (ja) * 2002-03-29 2003-10-17 Seiko Epson Corp 微細孔形成方法、半導体装置の製造方法、半導体装置、表示装置、および電子機器
DE102004058412B4 (de) * 2004-12-03 2017-03-02 Austriamicrosystems Ag Mehrfachmaske und Verfahren zur Herstellung unterschiedlich dotierter Gebiete und Verwendung des Verfahrens
US8008575B2 (en) 2006-07-24 2011-08-30 Sunpower Corporation Solar cell with reduced base diffusion area
JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
US8853527B2 (en) * 2007-02-16 2014-10-07 Nanogram Corporation Solar cell structures, photovoltaic panels and corresponding processes
US7820460B2 (en) 2007-09-07 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Patterned assembly for manufacturing a solar cell and a method thereof
US7727866B2 (en) 2008-03-05 2010-06-01 Varian Semiconductor Equipment Associates, Inc. Use of chained implants in solar cells
US8008176B2 (en) 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
US8912082B2 (en) 2010-03-25 2014-12-16 Varian Semiconductor Equipment Associates, Inc. Implant alignment through a mask
KR101702982B1 (ko) * 2010-07-19 2017-02-06 삼성에스디아이 주식회사 태양 전지 및 그 제조 방법
US8242005B1 (en) 2011-01-24 2012-08-14 Varian Semiconductor Equipment Associates, Inc. Using multiple masks to form independent features on a workpiece
US8153496B1 (en) * 2011-03-07 2012-04-10 Varian Semiconductor Equipment Associates, Inc. Self-aligned process and method for fabrication of high efficiency solar cells
US8697559B2 (en) 2011-07-07 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Use of ion beam tails to manufacture a workpiece

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
CN102203955A (zh) * 2008-11-20 2011-09-28 瓦里安半导体设备公司 制造太阳能电池的技术
WO2011049950A1 (en) * 2009-10-19 2011-04-28 Varian Semiconductor Equipment Associates, Inc. Stepped masking for patterned implantation

Also Published As

Publication number Publication date
TW201318190A (zh) 2013-05-01
KR20140070661A (ko) 2014-06-10
WO2013055627A1 (en) 2013-04-18
US20130087189A1 (en) 2013-04-11
JP2014532314A (ja) 2014-12-04
TWI560894B (en) 2016-12-01
KR101919514B1 (ko) 2019-02-08
JP6031112B2 (ja) 2016-11-24
WO2013055627A9 (en) 2014-07-03
US9190548B2 (en) 2015-11-17
CN103975450A (zh) 2014-08-06

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Granted publication date: 20160622

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