CN103975450B - 指叉型背接触太阳能电池及其处理基板的方法 - Google Patents
指叉型背接触太阳能电池及其处理基板的方法 Download PDFInfo
- Publication number
- CN103975450B CN103975450B CN201280059584.9A CN201280059584A CN103975450B CN 103975450 B CN103975450 B CN 103975450B CN 201280059584 A CN201280059584 A CN 201280059584A CN 103975450 B CN103975450 B CN 103975450B
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- China
- Prior art keywords
- light shield
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- type
- implant
- type dopant
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- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 44
- 238000000034 method Methods 0.000 title claims description 39
- 239000007943 implant Substances 0.000 claims abstract description 45
- 239000002019 doping agent Substances 0.000 claims abstract description 40
- 238000010884 ion-beam technique Methods 0.000 claims description 19
- 238000002513 implantation Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 2
- 238000002715 modification method Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 27
- 238000010586 diagram Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000008901 benefit Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- -1 phosphonium ion Chemical class 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
- H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Sustainable Energy (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/270,290 | 2011-10-11 | ||
US13/270,290 US9190548B2 (en) | 2011-10-11 | 2011-10-11 | Method of creating two dimensional doping patterns in solar cells |
PCT/US2012/059238 WO2013055627A1 (fr) | 2011-10-11 | 2012-10-08 | Procédé de création de motifs de dopage bidimensionnels dans des cellules solaires |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103975450A CN103975450A (zh) | 2014-08-06 |
CN103975450B true CN103975450B (zh) | 2016-06-22 |
Family
ID=47080834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280059584.9A Expired - Fee Related CN103975450B (zh) | 2011-10-11 | 2012-10-08 | 指叉型背接触太阳能电池及其处理基板的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9190548B2 (fr) |
JP (1) | JP6031112B2 (fr) |
KR (1) | KR101919514B1 (fr) |
CN (1) | CN103975450B (fr) |
TW (1) | TWI560894B (fr) |
WO (1) | WO2013055627A1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2988908B1 (fr) * | 2012-04-03 | 2015-03-27 | Commissariat Energie Atomique | Procede de fabrication d'une cellule photovoltaique a contacts interdigites en face arriere |
TWI643351B (zh) * | 2013-01-31 | 2018-12-01 | 澳洲商新南創新有限公司 | 太陽能電池金屬化及互連方法 |
CN104425651B (zh) * | 2013-09-09 | 2016-08-10 | 上海理想万里晖薄膜设备有限公司 | 一种低温制备正面无栅极的异质结太阳电池的工艺 |
TWM477049U (en) * | 2013-09-25 | 2014-04-21 | Inventec Solar Energy Corp | Back contact electrode solar cell |
US9401450B2 (en) * | 2013-12-09 | 2016-07-26 | Sunpower Corporation | Solar cell emitter region fabrication using ion implantation |
US20150280043A1 (en) * | 2014-03-27 | 2015-10-01 | David D. Smith | Solar cell with trench-free emitter regions |
CN104253169B (zh) * | 2014-09-28 | 2016-09-07 | 泰州中来光电科技有限公司 | 无主栅、高效率背接触太阳能电池模块、组件及制备工艺 |
TWI596786B (zh) * | 2015-12-03 | 2017-08-21 | 茂迪股份有限公司 | 背接觸太陽能電池及其製造方法 |
CN110010719B (zh) * | 2018-01-05 | 2021-02-19 | 上海凯世通半导体股份有限公司 | 掺杂方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102203955A (zh) * | 2008-11-20 | 2011-09-28 | 瓦里安半导体设备公司 | 制造太阳能电池的技术 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
JP2003297718A (ja) * | 2002-03-29 | 2003-10-17 | Seiko Epson Corp | 微細孔形成方法、半導体装置の製造方法、半導体装置、表示装置、および電子機器 |
DE102004058412B4 (de) * | 2004-12-03 | 2017-03-02 | Austriamicrosystems Ag | Mehrfachmaske und Verfahren zur Herstellung unterschiedlich dotierter Gebiete und Verwendung des Verfahrens |
US8008575B2 (en) | 2006-07-24 | 2011-08-30 | Sunpower Corporation | Solar cell with reduced base diffusion area |
JP2009152222A (ja) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
EP2122691A4 (fr) * | 2007-02-16 | 2011-02-16 | Nanogram Corp | Structures de pile solaire, modules photovoltaïques, et procédés correspondants |
US7820460B2 (en) | 2007-09-07 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Patterned assembly for manufacturing a solar cell and a method thereof |
US7727866B2 (en) | 2008-03-05 | 2010-06-01 | Varian Semiconductor Equipment Associates, Inc. | Use of chained implants in solar cells |
US20090227095A1 (en) | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Counterdoping for solar cells |
US8008176B2 (en) | 2009-08-11 | 2011-08-30 | Varian Semiconductor Equipment Associates, Inc. | Masked ion implant with fast-slow scan |
US8173527B2 (en) | 2009-10-19 | 2012-05-08 | Varian Semiconductor Equipment Associates, Inc. | Stepped masking for patterned implantation |
US8912082B2 (en) | 2010-03-25 | 2014-12-16 | Varian Semiconductor Equipment Associates, Inc. | Implant alignment through a mask |
KR101702982B1 (ko) * | 2010-07-19 | 2017-02-06 | 삼성에스디아이 주식회사 | 태양 전지 및 그 제조 방법 |
US8242005B1 (en) | 2011-01-24 | 2012-08-14 | Varian Semiconductor Equipment Associates, Inc. | Using multiple masks to form independent features on a workpiece |
US8153496B1 (en) * | 2011-03-07 | 2012-04-10 | Varian Semiconductor Equipment Associates, Inc. | Self-aligned process and method for fabrication of high efficiency solar cells |
US8697559B2 (en) | 2011-07-07 | 2014-04-15 | Varian Semiconductor Equipment Associates, Inc. | Use of ion beam tails to manufacture a workpiece |
-
2011
- 2011-10-11 US US13/270,290 patent/US9190548B2/en not_active Expired - Fee Related
-
2012
- 2012-10-08 KR KR1020147012389A patent/KR101919514B1/ko active IP Right Grant
- 2012-10-08 WO PCT/US2012/059238 patent/WO2013055627A1/fr active Application Filing
- 2012-10-08 CN CN201280059584.9A patent/CN103975450B/zh not_active Expired - Fee Related
- 2012-10-08 JP JP2014535769A patent/JP6031112B2/ja active Active
- 2012-10-11 TW TW101137495A patent/TWI560894B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102203955A (zh) * | 2008-11-20 | 2011-09-28 | 瓦里安半导体设备公司 | 制造太阳能电池的技术 |
Also Published As
Publication number | Publication date |
---|---|
CN103975450A (zh) | 2014-08-06 |
TWI560894B (en) | 2016-12-01 |
WO2013055627A9 (fr) | 2014-07-03 |
KR101919514B1 (ko) | 2019-02-08 |
WO2013055627A1 (fr) | 2013-04-18 |
JP6031112B2 (ja) | 2016-11-24 |
US20130087189A1 (en) | 2013-04-11 |
KR20140070661A (ko) | 2014-06-10 |
TW201318190A (zh) | 2013-05-01 |
JP2014532314A (ja) | 2014-12-04 |
US9190548B2 (en) | 2015-11-17 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160622 |